CN108396375A - A kind of crucible device of isoepitaxial growth aluminum-nitride single crystal - Google Patents
A kind of crucible device of isoepitaxial growth aluminum-nitride single crystal Download PDFInfo
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- CN108396375A CN108396375A CN201810269548.4A CN201810269548A CN108396375A CN 108396375 A CN108396375 A CN 108396375A CN 201810269548 A CN201810269548 A CN 201810269548A CN 108396375 A CN108396375 A CN 108396375A
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- crucible
- seed crystal
- kuppe
- single crystal
- aluminium nitride
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of crucible devices of isoepitaxial growth aluminum-nitride single crystal, it is used to place the crucible body of aluminium nitride seed crystal, the crucible cover at the top of crucible body, the fixed mechanism for being fixed on aln raw material above aluminium nitride seed crystal in crucible body including bottom, crucible device further includes being set to kuppe between aln raw material and aluminium nitride seed crystal, and kuppe is along close to the direction of aluminium nitride seed crystal gradual radial contraction downwards.A kind of crucible device of isoepitaxial growth aluminum-nitride single crystal of the present invention, it will be placed directly in crucible bottom for the aluminium nitride seed crystal of growing aluminum nitride monocrystalline, aln raw material is placed on crucible middle and upper part, it is inverted raw material area and vitellarium, avoiding the adhesive layer that traditional seed crystal technique for sticking is brought has the shortcomings that bubble, seed crystal face pollution；By the way that kuppe is arranged in crucible body, mass transfer direction in crucible body is optimized, the rate of aluminium nitride seed crystal epitaxial growth has been greatly facilitated.
Description
Technical field
The present invention relates to a kind of crucible devices of isoepitaxial growth aluminum-nitride single crystal.
Background technology
Aluminium nitride（AlN）Typical material of the crystal as third generation semiconductor has broad-band gap, high resistivity highly thermally conductive
Rate and high electronic drifting rate, while also there is good ultraviolet permeability, high disruptive field intensity.It is manufacture high temperature, height
Frequently, the ideal material of radioresistance and high power device.In addition AlN crystal is also as III race such as epitaxial growth GaN, AlGaN
The best substrate material of nitride, compared with common SiC substrate, Sapphire Substrate, the lattice mismatch of AlN and GaN, thermal mismatching are all
It is relatively smaller.The preparation method of AlN crystal mainly has physical vapor transport at present（PVT）, hydride vapour phase epitaxy method
（HVPE）, metal organic chemical compound vapor deposition method（MOCVD）Deng.Wherein physical vapor transport（PVT）It is that current growth is big
The most common method of size high quality aluminum nitride crystal, basic process are to make aln raw material by being heated in crucible
Its decompose distillation, then again low-temperature space depositing crystalline at aluminum nitride crystal.
Method is by continuing to develop, now more often using the crystal grain obtained with spontaneous nucleation by cutting, chemical machinery
The chip made after polishing is that seed crystal carries out isoepitaxial growth.Carrying out isoepitaxial growth with AlN substrates can effectively prepare
Go out that dislocation is few, the small high quality single crystal of stress.Existing grower is that aln raw material is placed on crucible bottom mostly,
Aluminium nitride seed crystal is bonded at crucible cover, crucible is heated to grow aluminum-nitride single crystal.
This grower is very high to the processing requirement of seed crystal, and the surface damage layer of seed crystal after treatment can cause
Crystal dislocation increases when epitaxial growth, and the stomata caused by the bonding agent that seed crystal bonding uses can be also transmitted in epitaxial growth
It grows in crystal, causes crystal hole or crackle occur, it is often to lead to isoepitaxial growth failure that seed crystal, which is bonded improper,
The technology of main cause, seed crystal bonding has become the technical barrier for hindering related scientific research unit.Therefore it is same PVT methods how to be solved
Seed crystal bonding problem in matter epitaxial growth aluminum-nitride single crystal, which becomes, restricts downstream aluminium nitride related electronic devices industry development
Key factor.
Invention content
The object of the present invention is to provide a kind of crucible devices of isoepitaxial growth aluminum-nitride single crystal, can effectively avoid
The problems such as seed crystal caused by aluminium nitride seed crystal bonding pollutes during aluminium nitride isoepitaxial growth, growth crystal quality is poor, energy
Enough prepare the large-sized aluminum-nitride single crystal of high quality.
In order to achieve the above objectives, the technical solution adopted by the present invention is：
A kind of crucible device of isoepitaxial growth aluminum-nitride single crystal, including bottom are used to place the crucible sheet of aluminium nitride seed crystal
Body, is used to aln raw material being fixed on institute the crucible cover at the top of the crucible body in the crucible body
The fixed mechanism above aluminium nitride seed crystal is stated, the crucible device further includes being set to the aln raw material and the aluminium nitride seed
Kuppe between crystalline substance, the kuppe, along the direction gradual radial contraction downwards close to the aluminium nitride seed crystal.
Preferably, the fixed mechanism includes bonding agent, and the aln raw material is by the adhesive bonds described
The lower surface of crucible cover.
It is highly preferred that the fixed mechanism includes separation net, the aln raw material is placed on the separation net, described
The first step for placing the separation net is equipped in crucible body.
It is further preferred that the aperture of the separation net is 0.5-10mm, the thickness of the separation net is 0.1-5mm.
Preferably, the second step being located at below the first step is equipped in the crucible body, the kuppe
Upper end edge its be circumferentially with the extension for being placed on the second step.
Preferably, the kuppe is in the downward taper of cone angle.
It is highly preferred that the kuppe is distributed with the crucible body coaxial inner conductor, the aluminium nitride seed crystal is located at described
On the axial line of kuppe.
Preferably, the crucible cover is sheathed in the crucible body, inside circumference and the crucible of the crucible cover
The distance between outside circumference of ontology is 0.01-1mm.
Preferably, the thickness of the kuppe is 0.1-3mm.
Preferably, the distance between the bottom of the kuppe and aluminium nitride seed crystal upper surface are 0-50mm.
Due to the application of the above technical scheme, the present invention has following advantages compared with prior art：It is of the invention a kind of same
The crucible device of matter epitaxial growth aluminum-nitride single crystal will be placed directly in crucible bottom for the aluminium nitride seed crystal of growing aluminum nitride monocrystalline
Aln raw material is placed on crucible middle and upper part, is inverted raw material area and vitellarium, avoids what traditional seed crystal technique for sticking was brought by portion
Adhesive layer has the shortcomings that bubble, seed crystal face pollution；By the way that kuppe is arranged in crucible body, optimize in crucible body
Mass transfer direction has greatly facilitated the rate of aluminium nitride seed crystal epitaxial growth.
Description of the drawings
Attached drawing 1 is the structural schematic diagram of apparatus of the present invention；
Attached drawing 2 is the structural schematic diagram of separation net；
Attached drawing 3 is the structural schematic diagram of kuppe.
Wherein：1, crucible body；2, crucible cover；3, aln raw material；4, aluminium nitride seed crystal；5, kuppe；6, separation net；
7, first step；8, second step；9, extension.
Specific implementation mode
The technical solution of the present invention will be further described below with reference to the accompanying drawings.
Referring to shown in Fig. 1-3, a kind of above-mentioned crucible device of isoepitaxial growth aluminum-nitride single crystal, including bottom are used to put
It sets the crucible body 1 of aluminium nitride seed crystal 4, be used to fix set on the crucible cover 2 at 1 top of crucible body, in crucible body 1
The fixed mechanism of aln raw material 3, aln raw material 3 are located at the top of aluminium nitride seed crystal 4.It will be for growing aluminum nitride monocrystalline
Aluminium nitride seed crystal 4 is placed directly in crucible bottom, and aln raw material 3 is placed on crucible middle and upper part, is inverted raw material area and vitellarium, energy
The adhesive layer that traditional seed crystal technique for sticking is brought enough is avoided to have the shortcomings that bubble, seed crystal face pollution.
Fixed mechanism can only include bonding agent, and aln raw material 3 is by adhesive bonds in the lower surface of crucible cover 2.
In the present embodiment, fixed mechanism only includes separation net 6, and aln raw material 3 is placed on separation net 6, crucible sheet
The first step 7 for placing separation net 6 is equipped in body 1.The first step 7 can be convexly equipped on the madial wall of crucible body 1,
It can also be recessed in the madial wall of crucible body 1；In the present embodiment, first step 7 is convexly equipped in the madial wall of crucible body 1
On, the distance of protrusion is 1.5mm.Separation net 6 is rounded, and the aperture with the coaxial distribution of crucible body 1, separation net 6 is 0.5-
The thickness of 10mm, separation net 6 are 0.1-5mm.In the present embodiment, the aperture of mesh is 5mm in separation net 6, and thickness is
0.5mm, the gas phase transmission that appropriately sized mesh contributes to aln raw material 3 to distil carry out crystal life at aluminium nitride seed crystal 4
Long, it is uniform that relatively thin thickness also contributes to raw material area heterogeneity phantom.
Fixed mechanism can also include bonding agent and separation net 6 simultaneously, and the upper surface of aln raw material 3 is viscous by bonding agent
It closes on crucible cover 2, the lower surface of aln raw material 3 contradicts on separation net 6, by dual fixation, is risen to aln raw material 3
Better fixed effect is arrived.
Crucible device further includes the kuppe 5 being set between aln raw material 3 and aluminium nitride seed crystal 4, and kuppe 5 is along close
The direction of aluminium nitride seed crystal 4 gradual radial contraction downwards.The second step for being located at 7 lower section of first step is equipped in crucible body 1
8, the upper end edge of kuppe 5 its be circumferentially with the extension 9 for being placed on second step 8.The extension 9 in a ring, edge
Horizontal direction extends.The second step 8 can be convexly equipped on the madial wall of crucible body 1, can also be recessed in crucible body 1
In madial wall；In the present embodiment, second step 8 is convexly equipped on the madial wall of crucible body 1, and the distance of protrusion is 1.5mm.
In the present embodiment, kuppe 5 is in the downward conical distribution of cone angle.Kuppe 5 and 1 coaxial inner conductor of crucible body point
Cloth, aluminium nitride seed crystal 4 are located on the axial line of kuppe 5, by this setting, can improve mass-transfer efficiency.The thickness of kuppe 5
Degree is 0.1-3mm；The distance between bottom and 4 upper surface of aluminium nitride seed crystal of kuppe 5 are 0-50mm.In the present embodiment,
The cone angle of kuppe 5 is 60 °, and the distance between aluminium nitride seed crystal 4 is 20mm, is conducive to lead top raw material area distillation gas phase
It is streamed to 4 surface of aluminium nitride seed crystal, reaches preferable degree of supersaturation, promotes crystal growth.
Crucible cover 2 is sheathed in crucible body 1, and the inside circumference of crucible cover 2 is with the outside circumference of crucible body 1 along crucible
The distance between 1 radial direction of ontology is 0.01-1mm.In the present embodiment, which is 0.5mm, and smaller gap can ensure earthenware
There is good air-tightness between crucible ontology 1 and crucible cover 2.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of crucible device of isoepitaxial growth aluminum-nitride single crystal, it is characterised in that：Including bottom for placing aluminium nitride
The crucible body of seed crystal, is used in the crucible body by aluminium nitride the crucible cover at the top of the crucible body
Raw material is fixed on the fixed mechanism above the aluminium nitride seed crystal, the crucible device further include be set to the aln raw material and
Kuppe between the aluminium nitride seed crystal, the kuppe, along gradually radial downwards close to the direction of the aluminium nitride seed crystal
It shrinks.
2. a kind of crucible device of isoepitaxial growth aluminum-nitride single crystal according to claim 1, it is characterised in that：It is described
Fixed mechanism includes bonding agent, and the aln raw material is by the adhesive bonds in the lower surface of the crucible cover.
3. a kind of crucible device of isoepitaxial growth aluminum-nitride single crystal according to claim 1 or 2, it is characterised in that：
The fixed mechanism includes separation net, and the aln raw material is placed on the separation net, is equipped with and uses in the crucible body
In the first step for placing the separation net.
4. a kind of crucible device of isoepitaxial growth aluminum-nitride single crystal according to claim 3, it is characterised in that：It is described
The aperture of separation net is 0.5-10mm, and the thickness of the separation net is 0.1-5mm.
5. a kind of crucible device of isoepitaxial growth aluminum-nitride single crystal according to claim 1, it is characterised in that：It is described
Be equipped with the second step being located at below the first step in crucible body, the upper end edge of the kuppe its be circumferentially with and be used for
The extension being placed on the second step.
6. a kind of crucible device of isoepitaxial growth aluminum-nitride single crystal according to claim 1, it is characterised in that：It is described
Kuppe is in the downward taper of cone angle.
7. a kind of crucible device of isoepitaxial growth aluminum-nitride single crystal according to claim 6, it is characterised in that：It is described
Kuppe is distributed with the crucible body coaxial inner conductor, and the aluminium nitride seed crystal is located on the axial line of the kuppe.
8. a kind of crucible device of isoepitaxial growth aluminum-nitride single crystal according to claim 1, it is characterised in that：It is described
Crucible cover is sheathed in the crucible body, between the inside circumference of the crucible cover and the outside circumference of the crucible body
Distance is 0.01-1mm.
9. a kind of crucible device of isoepitaxial growth aluminum-nitride single crystal according to claim 1, it is characterised in that：It is described
The thickness of kuppe is 0.1-3mm.
10. a kind of crucible device of isoepitaxial growth aluminum-nitride single crystal according to claim 1, it is characterised in that：Institute
It is 0-50mm to state the distance between bottom and aluminium nitride seed crystal upper surface of kuppe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810269548.4A CN108396375A (en) | 2018-03-29 | 2018-03-29 | A kind of crucible device of isoepitaxial growth aluminum-nitride single crystal |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810269548.4A CN108396375A (en) | 2018-03-29 | 2018-03-29 | A kind of crucible device of isoepitaxial growth aluminum-nitride single crystal |
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| CN108396375A true CN108396375A (en) | 2018-08-14 |
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| CN201810269548.4A Withdrawn CN108396375A (en) | 2018-03-29 | 2018-03-29 | A kind of crucible device of isoepitaxial growth aluminum-nitride single crystal |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110886018A (en) * | 2019-12-03 | 2020-03-17 | 中国电子科技集团公司第四十六研究所 | Growth method of large-size high-quality aluminum nitride single crystal |
| CN112126975A (en) * | 2020-09-18 | 2020-12-25 | 山东国晶电子科技有限公司 | Silicon carbide single crystal growth device |
| CN113337886A (en) * | 2021-06-04 | 2021-09-03 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Thermal field device and method for high-quality single crystal growth by PVT (physical vapor transport) method |
| CN113622030A (en) * | 2021-08-18 | 2021-11-09 | 福建北电新材料科技有限公司 | Method for preparing silicon carbide single crystal |
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| JPH06183897A (en) * | 1992-12-16 | 1994-07-05 | Nisshin Steel Co Ltd | Method for growing silicon carbide single crystal |
| CN205223407U (en) * | 2015-11-24 | 2016-05-11 | 北京华进创威电子有限公司 | Growth aluminum nitride crucible for single crystal |
| CN107723788A (en) * | 2017-10-20 | 2018-02-23 | 苏州奥趋光电技术有限公司 | A kind of crucible device for aluminum-nitride single crystal growth |
| CN107829134A (en) * | 2017-11-22 | 2018-03-23 | 北京大学 | A kind of aluminum-nitride single crystal grower and method without seed crystal adhesive technology |
| CN208151521U (en) * | 2018-03-29 | 2018-11-27 | 苏州奥趋光电技术有限公司 | A kind of crucible device of isoepitaxial growth aluminum-nitride single crystal |
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2018
- 2018-03-29 CN CN201810269548.4A patent/CN108396375A/en not_active Withdrawn
Patent Citations (5)
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| JPH06183897A (en) * | 1992-12-16 | 1994-07-05 | Nisshin Steel Co Ltd | Method for growing silicon carbide single crystal |
| CN205223407U (en) * | 2015-11-24 | 2016-05-11 | 北京华进创威电子有限公司 | Growth aluminum nitride crucible for single crystal |
| CN107723788A (en) * | 2017-10-20 | 2018-02-23 | 苏州奥趋光电技术有限公司 | A kind of crucible device for aluminum-nitride single crystal growth |
| CN107829134A (en) * | 2017-11-22 | 2018-03-23 | 北京大学 | A kind of aluminum-nitride single crystal grower and method without seed crystal adhesive technology |
| CN208151521U (en) * | 2018-03-29 | 2018-11-27 | 苏州奥趋光电技术有限公司 | A kind of crucible device of isoepitaxial growth aluminum-nitride single crystal |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110886018A (en) * | 2019-12-03 | 2020-03-17 | 中国电子科技集团公司第四十六研究所 | Growth method of large-size high-quality aluminum nitride single crystal |
| CN112126975A (en) * | 2020-09-18 | 2020-12-25 | 山东国晶电子科技有限公司 | Silicon carbide single crystal growth device |
| CN113337886A (en) * | 2021-06-04 | 2021-09-03 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | Thermal field device and method for high-quality single crystal growth by PVT (physical vapor transport) method |
| CN113622030A (en) * | 2021-08-18 | 2021-11-09 | 福建北电新材料科技有限公司 | Method for preparing silicon carbide single crystal |
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