CN108390249B - Dynamic Q-switching device and method based on photonic crystal microcavity - Google Patents
Dynamic Q-switching device and method based on photonic crystal microcavity Download PDFInfo
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Abstract
The invention discloses a dynamic Q-switching device based on a photonic crystal microcavity, which comprises a wavelength tunable pulse laser, a p-i-n junction electro-optic modulator and a photonic crystal microcavity-waveguide structure; the photonic crystal microcavity-waveguide structure consists of a front side photonic crystal waveguide, a multimode photonic crystal microcavity and a rear side photonic crystal waveguide; the front side photonic crystal waveguide is positioned at the left side of the multimode photonic crystal microcavity, and the rear side photonic crystal waveguide is positioned at the right side of the multimode photonic crystal microcavity. The invention also discloses a dynamic Q-switching method based on the photonic crystal microcavity. The invention has simple structure, easy realization and integration, and can freely control the resonant frequency and the Q value of the cavity mode with low Q value and the cavity mode with ultrahigh Q value through fine design of the shape, the structure and the size of the multimode photonic crystal microcavity, so that the multimode photonic crystal microcavity has a larger dynamic Q-switching range and a larger working bandwidth.
Description
Technical Field
The invention relates to a photonic crystal microcavity, in particular to a dynamic Q-switching device and a dynamic Q-switching method based on the photonic crystal microcavity.
Background
The high Q microcavity can localize light in a tiny space of sub-wavelength magnitude for a long time, so that the interaction between light and substances in the microcavity is greatly enhanced, and the microcavity has wide application prospect in the fields of all-optical switches, optical diodes, all-optical wavelength conversion and the like. In recent years, with the rapid development of micro-nano photon technology, the quality factor exceeds 10 5 Has been realized. However, high Q microcavities face a fundamental difficulty: on the one hand, the higher the Q value of the microcavity is, the longer the photon storage life in the microcavity is; on the other hand, however, since the high Q microcavity corresponds to a very narrow cavity mode line width, the bandwidth of the pulse signal light allowed to couple into the microcavity must also be very narrow, and the speed of the signal light entering and exiting the high Q microcavity is extremely slow (inversely proportional to the Q value), which is obviously disadvantageous for the requirements of high-speed, broadband optical signal processing.
The key to solve the above problems is to dynamically adjust Q: firstly, the micro cavity is adjusted to a lower Q value state so as to enable pulse signal light with larger bandwidth to be quickly coupled into the micro cavity from the waveguide, and the micro cavity is in an 'on state'; then, after the pulse signal light completely enters the microcavity, the microcavity is quickly adjusted to an ultrahigh Q value, so that the captured signal light is difficult to overflow from the microcavity, and the microcavity is in a closed state at the moment, so that the light energy is localized in the cavity for a long time, thereby obtaining obvious light delay and enhancing the interaction of the light and substances; when the micro-cavity is required to be released, the micro-cavity is again adjusted to be in a low Q state, and stored signal light can be rapidly coupled into the emergent waveguide from the micro-cavity. This allows a significant increase in the delay-bandwidth product, breaking through the limits of the contradictory relationships between them. However, the method has quite difficulty in realizing large-amplitude dynamic Q-switching of the microcavity, and few current realization ways are realized mainly by introducing a reflecting mirror at one side of a photonic crystal waveguide, controlling interference cancellation or phase growth of incident light and reflected light by means of precise ultra-fast phase modulation, and enabling the microcavity to be switched between a closed state and an open state, or generating similar electromagnetic induction transparent effect by simultaneously carrying out adiabatic wavelength conversion on resonant wavelengths of a plurality of coupled microcavities. The dynamic Q-switching modes, whether based on the interference effect of phase modulation or based on the quasi-electromagnetic induction transparent effect of multi-microcavity resonant frequency modulation, have very complex related technology and severe requirements on experimental conditions, and therefore, the application of the dynamic Q-switching mode is limited. Therefore, it is important and critical to discuss a simpler and more efficient dynamic Q-switching method, and to implement dynamic Q-switching in a single microcavity.
Disclosure of Invention
In order to overcome the defects and shortcomings of the prior art, the invention aims to provide a dynamic Q-switching device based on a photonic crystal microcavity, which is simple in structure and easy to realize and integrate.
The invention also aims to provide a dynamic Q-switching method based on the photonic crystal microcavity, which can quickly couple signal light with larger bandwidth into the microcavity, can locally locate in the microcavity for a long time and can be quickly released when needed.
The aim of the invention is achieved by the following technical scheme:
the dynamic Q-switching device based on the photonic crystal microcavity comprises a wavelength tunable pulse laser, a p-i-n junction electro-optical modulator and a photonic crystal microcavity-waveguide structure; the wavelength tunable pulse laser is used for providing incident signal light; the p-i-n junction electro-optical modulator is used for dynamically modulating the refractive index of the photonic crystal microcavity;
the photonic crystal microcavity-waveguide structure consists of a front side photonic crystal waveguide, a multimode photonic crystal microcavity and a rear side photonic crystal waveguide; the front side photonic crystal waveguide is positioned at the left side of the multimode photonic crystal microcavity, and the rear side photonic crystal waveguide is positioned at the right side of the multimode photonic crystal microcavity;
the photonic crystal forms a triangular lattice in a silicon material flat plate by a circular air hole; the diameter of the air hole is 0.4a, wherein a is the lattice constant of the photonic crystal; the thickness of the silicon material flat plate is 0.5a;
the multimode photonic crystal microcavity is formed by removing 6 to 14 air holes in the center of a photonic crystal chip along the horizontal direction and comprises 1 cavity mode with low Q value and 1 cavity mode with ultrahigh Q value, wherein the Q value of the cavity mode with low Q value is smaller than 15000; the Q value of the ultra-high Q value cavity mode is more than 100000; the resonant frequency of the cavity mode with lower Q value is the same as the center frequency of the incident pulse signal light;
the low Q value cavity mode and the ultra-high Q value cavity mode are formed by reducing air holes at the leftmost side and the rightmost side of the multimode photonic crystal microcavity to 1/2 of the original air holes, and respectively horizontally moving a/3 to the left side and the right side.
The front side photonic crystal waveguide is formed by removing 1 row of horizontally arranged circular air holes on the left side of the multimode photonic crystal microcavity.
The back side photonic crystal waveguide is formed by removing 1 row of horizontally arranged circular air holes on the right side of the multimode photonic crystal microcavity.
The center of the refractive index electro-optic modulation area of the multimode photonic crystal microcavity coincides with the center of the multimode photonic crystal microcavity, and the area of the modulation area covers 1/2 of the whole microcavity.
The photonic crystal microcavity-based dynamic Q-switching method based on the photonic crystal microcavity-based dynamic Q-switching device comprises a wavelength tunable pulse laser, a p-i-n junction electro-optic modulator and the photonic crystal microcavity-waveguide structure; the wavelength tunable pulse laser is used for providing incident signal light; the p-i-n junction electro-optic modulator is used for dynamically modulating the refractive index of the photonic crystal microcavity.
The resonance frequency of the incident pulse signal light generated by the wavelength tunable pulse laser is the same as the center frequency of the incident pulse signal light.
The working bandwidth of the incident pulse signal light generated by the wavelength tunable pulse laser is matched with the frequency domain linewidth of the cavity mode with low Q value.
The dynamic Q-switching method based on the photonic crystal microcavity comprises the following steps:
step one: incident pulse signal light with the frequency within the photonic crystal band gap range is incident from the front photonic crystal waveguide;
step two: after the equal signal light is completely coupled into the photonic crystal microcavity, the refractive index of a partial region of the multimode photonic crystal microcavity is subjected to periodic electro-optic modulation through a p-i-n junction electro-optic modulator, so that the refractive index of the microcavity is periodically changed, and the modulation frequency is just set as the difference between the resonant frequencies of a low Q-value cavity mode and an ultrahigh Q-value cavity mode of the microcavity; under the induction of refractive index periodic modulation, the signal light energy in the cavity is periodically converted between a low Q value cavity mode and an ultrahigh Q value cavity mode along with time, and when the signal light energy is completely converted from the low Q value cavity mode to the ultrahigh Q value cavity mode, the p-i-n junction electro-optical modulator is closed, so that the signal light is localized in the microcavity for a long time;
step three: when the signal light is required to be released, the p-i-n junction electro-optic modulator is opened again, so that the energy conversion between the low Q value cavity mode and the ultra-high Q value cavity mode is continuously and periodically carried out, and when the signal light energy is completely converted from the ultra-high Q value cavity mode to the low Q value cavity mode, the p-i-n junction electro-optic modulator is closed, so that the rapid release of the signal light to the rear photonic crystal waveguide is realized.
The principle of the invention is as follows: firstly, designing a multimode microcavity to contain 1 cavity mode with low Q value and 1 cavity mode with ultrahigh Q value, and their resonant frequencies are omega respectively 1 And omega 2 . Typically, the two cavity modes are orthogonal, without any coupling effect between them, and therefore no exchange of energy between them. However, if the microcavity refractive index is periodically modulated, the microcavity refractive index is changed as follows:
n(r，t)＝n 0 +Δn(r)sin(Ωt)， (1)
wherein n is 0 Is the refractive index of the microcavity without modulation, Ω= |ω 2 -ω 1 And I is the modulation frequency of the refractive index, r is the different positions in the microcavity region, t is the modulation time, and delta n (r) is the refractive index modulation amplitude of the different positions in the microcavity. By taking the equation (1) with the Maxwell equation, the periodic conversion of the signal light energy between the low Q-value cavity mode and the ultrahigh Q-value cavity mode can be deduced under the induction of the periodic modulation of the refractive index of the microcavity. At this time, the normalized energy of the low Q cavity mode and the ultra-high Q cavity mode will be changed according to the following rules:
wherein K is the coupling coefficient between the cavity mode with low Q value and the cavity mode with ultrahigh Q value under the induction of periodical modulation of the refractive index of the microcavity. From the formulas (2) and (3), the conversion period of the signal light energy between the cavity mode with low Q value and the cavity mode with ultrahigh Q value is as followsIn order to ensure that K is not equal to 0 and the dynamic Q-switching effect is optimal, the refractive index modulation area of the photonic crystal microcavity accounts for about 1/2 of the whole microcavity, and the center of the modulation area coincides with the center of the microcavity.
Through the optimized design of the multimode microcavity, the center frequency of the pulse signal light is the same as the cavity mode resonant frequency with low Q value of the microcavity, so that the signal light can be efficiently and quickly coupled into the microcavity (the coupling speed is inversely proportional to the Q value), and the incident signal light is allowed to have larger working bandwidth. After the equal signal light is completely coupled into the photonic crystal microcavity, the refractive index of the microcavity is subjected to periodic electro-optic modulation through a p-i-n junction, so that the refractive index of the microcavity is periodically changed according to an equation (1). Under the induction of the refractive index periodic modulation, the energy of the signal light in the cavity is periodically converted between the cavity mode with low Q value and the cavity mode with ultrahigh Q value according to the equation (2) and the equation (3) along with time. When the energy of the signal light is completely converted from the cavity mode with low Q value to the cavity mode with ultra-high Q value, the modulation is turned off, so that the signal light can be localized in the microcavity for a long time. When the signal light needs to be released, the modulation is turned on again, so that the energy conversion between the cavity mode with low Q value and the cavity mode with ultrahigh Q value is continuously and periodically carried out; when the energy of the signal light is completely converted from the cavity mode with the ultra-high Q value to the cavity mode with the low Q value, the modulation is turned off, so that the rapid release of the signal light (the release speed is inversely proportional to the Q value) can be realized. Thus, the dynamic Q-switching of the microcavity can be realized.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) The existing dynamic Q-switching technology is mainly based on interference effect of phase modulation or electromagnetic induction transparent effect similar to multi-microcavity resonant frequency modulation, and the related technology is very complex and has very strict requirements on experimental conditions. The invention does not need to carry out phase modulation, does not need to use the electromagnetic induction-like transparent effect based on multiple microcavities, can realize dynamic Q adjustment by only carrying out dynamic modulation on the refractive index of one microcavity, has simple structure and is easy to realize and integrate.
(2) The existing dynamic Q-switching technology is realized by finely regulating and controlling the refractive index of a waveguide or a microcavity through the free carrier absorption effect caused by the irradiation of the external pulse pumping light to the surface of a silicon material, whether the dynamic Q-switching technology is based on the interference effect of phase modulation or the electromagnetic induction-like transparent effect of multi-microcavity resonant frequency modulation. However, the microcavity will hardly maintain a closed-cavity state of high Q value due to dynamic recombination of free carriers generated in the silicon material, and the time for which the signal light is localized to the microcavity is limited. In addition, free carrier absorption also brings about a large optical loss, which further reduces the time for which the signal light is localized in the microcavity. The invention dynamically electro-optically modulates the refractive index of the microcavity through the p-i-n junction instead of by means of the free carrier absorption effect, so that the time for which the signal light is localized in the microcavity can be longer.
(3) The dynamic Q-switching is realized by utilizing signal light to dynamically transition between a low-Q-value cavity mode and an ultrahigh-Q-value cavity mode of the microcavity. Because the resonant frequency of the cavity mode with low Q value is the same as the central frequency of the incident pulse signal light, the signal light can be quickly coupled into the microcavity and has larger working bandwidth, and the working bandwidth of the dynamic Q-switching technology based on the phase modulation interference effect and the electromagnetic induction-like transparent effect is usually very small.
(4) The resonant frequency and the Q value corresponding to the low-Q value cavity mode and the ultra-high Q value cavity mode can be automatically controlled through fine design of the shape, the structure and the size of the photonic crystal microcavity, so that the dynamic Q-switching has better applicability to the wavelength of the signal light, and has stronger operability in the aspects of the coupling speed of the signal light into and out of the microcavity, the working bandwidth, the time of the signal light localized in the microcavity and the like, thereby being more beneficial to high-speed and broadband all-optical signal processing.
Drawings
Fig. 1 is a schematic diagram of a dynamic Q-switching device based on photonic crystal microcavity according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of a photonic crystal microcavity-waveguide structure implementing dynamic Q-tuning according to an embodiment of the present invention.
Fig. 3 is a time domain evolution diagram of implementing efficient coupling of signal light into a microcavity and long-time storage in the microcavity according to an embodiment of the present invention.
Fig. 4 is a time domain evolution diagram of signal light released from a microcavity at any desired time according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples, but embodiments of the present invention are not limited thereto.
Example 1
As shown in fig. 1, the photonic crystal microcavity-based dynamic Q-switching device of the present embodiment includes a wavelength tunable Pulse laser (Pulse LD) 1, a Variable Optical Attenuator (VOA) 2, a polarization controller 3, a lens fiber 4, a photonic crystal microcavity-waveguide structure 5, a p-i-n junction electro-optic modulator (VF) 6, a lens fiber 7, and a spectrum analyzer (OSA) 8.
The working wavelength of the wavelength tunable pulse laser 1 is continuously adjustable from 1500nm to 1600nm, the tuning precision is 1MHz, the pulse width is 50ps, and the repetition frequency is 350MHz.
As shown in fig. 2, the photonic crystal microcavity-waveguide structure 5 of the present embodiment forms a triangular lattice from 32×17 circular air holes in a flat plate of silicon material, and is arranged along the xy plane. Air hole diameter d=0.4a, where a=420 nm is the lattice constant of the photonic crystal. The refractive index of the silicon material plate is 3.4, and the thickness (perpendicular to the xy plane) h=0.5a. The photonic crystal microcavity-waveguide structure 5 is composed of a front-side photonic crystal waveguide 9, a photonic crystal microcavity 10, and a rear-side photonic crystal waveguide 11. The multimode photonic crystal microcavity 10 is formed by removing 1 row of air holes (totally 8) in the center of the photonic crystal along the horizontal direction, and the left side and the right side of the cavity respectively form cavity walls of a resonant cavity by two air holes with the diameter of 0.4 a; the two air holes on the leftmost side and the rightmost side of the microcavity close to the cavity wall are reduced to 1/2 of the original air holes, and respectively horizontally move by a/3 to the left and the right sides, so that a cavity mode with low Q value (Q=10800) and a cavity mode with ultrahigh Q value (Q= 126500) can be formed, the resonant frequencies of the cavity mode are 0.27081 (2 pi c/a) and 0.27078 (2 pi c/a), and c is the speed of light in vacuum. The front side photonic crystal waveguide 9 is positioned at the left side of the multimode photonic crystal microcavity 10, and the rear side photonic crystal waveguide 11 is positioned at the right side of the multimode photonic crystal microcavity 10. The front side photonic crystal waveguide 9 and the rear side photonic crystal waveguide 11 are formed by removing 1 row of circular air holes horizontally arranged on the left and right sides of the multimode photonic crystal microcavity, respectively. The center of the microcavity refractive index electro-optic modulation region 12 coincides with the center of the multimode photonic crystal microcavity, and the modulation region area covers 1/2 of the entire microcavity.
The dynamic Q-switching method based on the photonic crystal microcavity of the embodiment comprises the following steps:
the first step: the shape, the size and the structure of the photonic crystal microcavity are optimally designed, 8 air holes are removed along the horizontal direction at the center of the photonic crystal chip to form a multimode photonic crystal microcavity, and the left side and the right side of the cavity respectively form cavity walls of a resonant cavity by two air holes with the diameter of 0.4 a; then the two air holes on the leftmost side and the rightmost side of the micro-cavity close to the cavity wall are reduced to 1/2 of the original air holes, and respectively horizontally move a/3 to the left and the right sides, so that a cavity mode with lower Q value (Q=10800) and a cavity mode with ultrahigh Q value (Q= 126500) can be formed, the resonant frequency of which is dividedAre of the order omega 1 = 0.27081 (2ρc/a) and ω 2 ＝0.27078(2πc/a)。
And a second step of: the wavelength tunable pulse laser 1 is turned on, its center wavelength is adjusted to 1550nm, its power is adjusted to 1 milliwatt by the variable optical attenuator 2, and the electric field of the wavelength tunable pulse laser 1 is polarized in a direction parallel to the xy plane (i.e., transverse electric wave, TE polarization) by the polarization controller 3. As shown in fig. 1, the signal light emitted by the wavelength tunable pulse laser 1 is focused by the lens fiber 4, and then enters the front photonic crystal waveguide 9 along the 2-dimensional photonic crystal plane (i.e., xy plane), and is coupled into the multimode photonic crystal microcavity 10.
And a third step of: after the equal signal light is completely coupled into the multimode photonic crystal microcavity, a p-i-n junction electro-optic modulator is started, and the modulation frequency is set to be omega=omega 1 -ω 2 The microcavity refractive index is periodically varied according to equation (1). Under the induction of refractive index periodic modulation, the energy of the signal light in the cavity is periodically converted between a cavity mode with low Q value and a cavity mode with ultrahigh Q value along with time, and the conversion period is 9ps in the embodiment. After a conversion period of time t of 1/2 (or an odd multiple of 1/2), the signal light energy is completely converted from the low-Q cavity mode to the ultra-high-Q cavity mode. At this time, the p-i-n junction electro-optical modulator is turned off, so that the signal light can be localized in the microcavity for a long time, and the output signal light power is almost 0 at this time, as shown in fig. 3, wherein 13 is the time point of turning off the p-i-n junction electro-optical modulator.
Fourth step: when the signal light needs to be released at any desired time, the p-i-n junction electro-optic modulator is turned on again, as shown in fig. 4 (where 14 is the signal to be released time point arbitrarily selected in the present embodiment), so that the energy conversion between the low Q cavity mode and the ultra-high Q cavity mode continues periodically. When the energy of the signal light is completely converted from the ultra-high Q value cavity mode to the low Q value cavity mode, the p-i-n junction electro-optic modulator is turned off, and the time point of turning off the p-i-n junction electro-optic modulator is shown as 15 in fig. 4, so that the signal light can be rapidly released to the rear side photonic crystal waveguide 11 within 25ps, and is received by the spectrum analyzer 10 after passing through the lens optical fiber 7.
The embodiments described above are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the embodiments described above, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principles of the present invention should be made in the equivalent manner, and are included in the scope of the present invention.
Claims (5)
1. A dynamic Q-switching method of a dynamic Q-switching device based on a photonic crystal microcavity is characterized in that,
the dynamic Q-switching device based on the photonic crystal microcavity comprises a wavelength tunable pulse laser, a p-i-n junction electro-optic modulator and a photonic crystal microcavity-waveguide structure; the wavelength tunable pulse laser is used for providing incident signal light; the p-i-n junction electro-optical modulator is used for dynamically modulating the refractive index of the photonic crystal microcavity;
the photonic crystal microcavity-waveguide structure consists of a front side photonic crystal waveguide, a multimode photonic crystal microcavity and a rear side photonic crystal waveguide; the front side photonic crystal waveguide is positioned at the left side of the multimode photonic crystal microcavity, and the rear side photonic crystal waveguide is positioned at the right side of the multimode photonic crystal microcavity;
the photonic crystal forms a triangular lattice in a silicon material flat plate by a circular air hole; the diameter of the air hole is 0.4aWhereinaIs the lattice constant of the photonic crystal; the thickness of the silicon material flat plate is 0.5a；
The multimode photonic crystal microcavity is formed by removing 6 to 14 air holes in the center of a photonic crystal chip along the horizontal direction and comprises 1 cavity mode with low Q value and 1 cavity mode with ultrahigh Q value, wherein the Q value of the cavity mode with low Q value is smaller than 15000; the Q value of the ultra-high Q value cavity mode is more than 100000; the resonant frequency of the cavity mode with the low Q value is the same as the center frequency of the incident pulse signal light;
the low Q value cavity mode and the ultra-high Q value cavity mode reduce the leftmost air hole and the rightmost air hole of the multimode photonic crystal microcavity to 1/2 of the original air holes, and respectively horizontally move to the left side and the right side respectivelya3;
the dynamic Q-switching method comprises the following steps:
step one: incident pulse signal light with the frequency within the photonic crystal band gap range is incident from the front photonic crystal waveguide;
step two: after the equal signal light is completely coupled into the photonic crystal microcavity, the refractive index of a partial region of the multimode photonic crystal microcavity is subjected to periodic electro-optic modulation through a p-i-n junction electro-optic modulator, so that the refractive index of the microcavity is periodically changed, and the modulation frequency is just set as the difference between the resonant frequencies of a low Q-value cavity mode and an ultrahigh Q-value cavity mode of the microcavity; under the induction of refractive index periodic modulation, the signal light energy in the cavity is periodically converted between a low Q value cavity mode and an ultrahigh Q value cavity mode along with time, and when the signal light energy is completely converted from the low Q value cavity mode to the ultrahigh Q value cavity mode, the p-i-n junction electro-optical modulator is closed, so that the signal light is localized in the microcavity for a long time;
step three: when the signal light is required to be released, the p-i-n junction electro-optic modulator is opened again, so that the energy conversion between the low Q value cavity mode and the ultra-high Q value cavity mode is continuously and periodically carried out, and when the signal light energy is completely converted from the ultra-high Q value cavity mode to the low Q value cavity mode, the p-i-n junction electro-optic modulator is closed, so that the rapid release of the signal light to the rear photonic crystal waveguide is realized.
2. The dynamic Q-switching method of a photonic crystal microcavity-based dynamic Q-switching device of claim 1, wherein the front-side photonic crystal waveguide is formed by removing 1 row of horizontally aligned circular air holes on the left side of the multimode photonic crystal microcavity.
3. The dynamic Q-switching method of a photonic crystal microcavity-based dynamic Q-switching device of claim 1, wherein the backside photonic crystal waveguide is formed by removing 1 row of horizontally aligned circular air holes on the right side of the multimode photonic crystal microcavity.
4. The dynamic Q-switching method of a dynamic Q-switching device based on photonic crystal microcavity according to claim 1, wherein the center of the refractive index electro-optical modulation region of the multimode photonic crystal microcavity coincides with the center of the multimode photonic crystal microcavity, and the modulation region area covers 1/2 of the whole microcavity.
5. The dynamic Q-switching method of a photonic crystal microcavity-based dynamic Q-switching device of claim 1, wherein the operating bandwidth of the incident pulse signal light generated by the wavelength tunable pulse laser is matched with the frequency domain linewidth of the cavity mode with a low Q value.
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- 2018-05-18 CN CN201810487958.6A patent/CN108390249B/en active Active
Non-Patent Citations (1)
| Title |
|---|
| 光子晶体集成光电子器件;刘娅钊;李志远;;物理(第09期);第658-665页 * |
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| CN108390249A (en) | 2018-08-10 |
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