CN108389970A - A kind of perovskite solar cell and preparation method thereof with energy band gradient based on mixed steaming technique - Google Patents
A kind of perovskite solar cell and preparation method thereof with energy band gradient based on mixed steaming technique Download PDFInfo
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Abstract
The invention discloses a kind of based on the mixed perovskite solar cell and preparation method thereof with energy band gradient for steaming technique,It is related to technical field of solar batteries,The perovskite solar cell of the present invention includes the reflection layer set gradually from the bottom up,Transparent conductive electrode layer,Hole transmission layer,Perovskite light-absorption layer,Electron transfer layer and metal electrode layer,Perovskite light-absorption layer includes several perovskite polycrystalline films with different bandwidths prepared by blending evaporation process,Several perovskite polycrystalline film horizontal alignment arrangements,The preparation method of the present invention is using blending evaporation process,By the calcium titanium ore bed horizontal arrangement of different bandwidths,Obtain the perovskite solar cell with energy band gradient,The interface problem between each functional layer can not only be overcome,The open-circuit voltage of device can also be improved to a certain extent,So that device performance is promoted.
Description
Technical field
The present invention relates to technical field of solar batteries, having energy band based on mixed steaming technique more particularly to a kind of
Perovskite solar cell of gradient and preparation method thereof.
Background technology
In recent years, energy crisis and problem of environmental pollution have become the common focus of attention in the whole world, too as the third generation
It is positive can battery --- the appearance of perovskite solar cell, the wide of academia and industrial circle is caused with its superior material property
General concern.It is prepared so far by Miyasaka professors and its seminar for the first time from perovskite solar cell in 2009, energy
Measure transfer efficiency from initial 3.8% (Journal of the American Chemical Society, 2009,131
(17):It 6050-6051.) is promoted to of today 22.1% (NREL), is mutually equal to the performance of traditional silica-based solar cell
Commercially viable level is constantly approached by U.S..Compared to the solar cells such as traditional silicon substrate, cadmium telluride, copper indium gallium selenide, perovskite
Solar cell have the advantages that it is simple for process, of low cost, can flexibility large area prepare；On the other hand, compared to second
For solar cell (mainly including machine, dye sensitization, quantum dot solar cell), the energy of perovskite solar cell turns
Change efficiency far it is high they, therefore, perovskite solar cell combines first generation solar cell and second generation solar-electricity
The advantages of pond and feature become at present the novel solar battery of most market potential.
The development bottleneck of perovskite solar cell is other than stability is poor, scans ysteresis effect at present, open-circuit voltage
Relatively low, narrow absorption spectrum is also another urgent problem to be solved, and open-circuit voltage and absorption spectrum are mainly by perovskite material
Energy gap determined that conventional perovskite material is difficult to not only ensure higher open-circuit voltage but also has wide absorption light
Spectrum, although at this stage in document it has been reported that many broad stopbands perovskite material (Energy Environ.Sci.2017,
10,710-727), make full use of device made of these material preparations that can solve the above problems to a certain extent, but because its
Cost is higher, preparation process is complicated, just limits the development of perovskite solar cell.
It is recorded according to pertinent literature, solution to the problems described above is mainly cascade solar cell at this stage, cascade
Perovskite solar cell can largely promote the open-circuit voltage of device so that the performance of device entirety is carried
It rises, but for cascade solar cell, in cascade every one functional layer interface, there are a large amount of defects, and can
The phenomenon that lattice mismatch can occur, it is difficult to prepare the multilayer cascade functional layer of high quality, the performance so as to cause device entirety reaches
Less than expection；And existing functional layer is to be prepared by spin coating proceeding, but spin coating proceeding is there is spin coating area is bigger,
The more uncontrollable problem of film forming thickness, to limit industrialization large-scale production.
Invention content
It is an object of the invention to：In order to solve existing functional layer prepared by spin coating proceeding, but spin coating work
Skill is there is spin coating area is bigger, the more uncontrollable problem of thicknesses of layers, and the present invention provides a kind of based on the mixed tool for steaming technique
The perovskite solar cell and preparation method thereof for having energy band gradient, using evaporation process is blended, by the calcium of different bandwidths
Titanium ore layer horizontal alignment arrange, obtain with energy band gradient perovskite solar cell, can not only overcome each functional layer it
Between interface problem, additionally it is possible to control film forming thickness so that device performance is promoted.
The present invention specifically uses following technical scheme to achieve the goals above：
It is a kind of to steam the perovskite solar cell with energy band gradient of technique based on mixed, including set gradually from the bottom up
Reflection layer, transparent conductive electrode layer, hole transmission layer, perovskite light-absorption layer, electron transfer layer and metal electrode layer, it is special
Sign is：The perovskite light-absorption layer includes that several perovskites with different bandwidths for being prepared by blending evaporation process are more
Epitaxial, several perovskite polycrystalline film horizontal alignment arrangements.
Further, the band difference between the perovskite polycrystalline film is 0.1~0.8eV.
Further, several perovskite polycrystalline films by different evaporation rates than light absorbent A and light absorbent B exist
Vapor deposition is repeatedly blended in vacuum environment to be made.
Further, vapor deposition is blended three times in the light absorbent A and light absorbent B in vacuum environment, wherein for the first time
When vapor deposition is blended, the evaporation rate ratio of light absorbent A and light absorbent B is 1:0；Second when being blended vapor deposition, light absorbent A with
The evaporation rate ratio of light absorbent B is 0.87:0.13；When vapor deposition is blended in third time, the evaporation of light absorbent A and light absorbent B
Speed ratio is 0.8:0.2.
Further, the light absorbent A is preferably methylamine lead iodine, and light absorbent B is preferably methylamine lead bromine.
Further, the thickness range of the perovskite light-absorption layer is 100~500nm.
Further, the thickness range of the reflection layer be 90~110nm, and its material be include but not limited to gold,
Any one of silver, aluminium.
Further, the thickness range of the transparent conductive electrode layer is 130~170nm, and its material is nano indium tin
Metal oxide ITO.
Further, the thickness range of the hole transmission layer is 80~100nm, and its material is to include but not limited to
PEDOT:PSS、CuSCN、CuI、NiOxAny one of.
Further, the thickness range of the electron transfer layer is 60~80nm, and it includes but not limited to richness that its material, which is,
Strangle ene derivative PCBM, TiO2Or ZnO's is any.
Further, the thickness range of the metal electrode layer is 80~120nm, and its material is to include but not limited to
Gold, silver, aluminium electrode, nano silver wire or conductive polymer film it is any.
A kind of preparation method based on the mixed perovskite solar cell with energy band gradient for steaming technique, including following step
Suddenly：
S1, reflection layer is prepared：It is less than 5.0 × 10 in vacuum degree-3In the environment of Pa, it is being coated with transparent conductive electrode layer
Reflection layer is deposited in the glass substrate back side, obtains substrate A；
S2, hole transmission layer is prepared：The spin coating hole transmission layer on transparent conductive electrode layer, then to hole transmission layer into
Row annealing, obtains substrate B；
S3, perovskite light-absorption layer is prepared：In vacuum evaporation equipment, light absorbent A and light absorbent B is corresponded to respectively and is filled
Enter in evaporation source A and evaporation source B, by adjusting the evaporation rate ratio of evaporation source A and evaporation source B, substrate B is steamed several times
Plating, makes several perovskite polycrystalline films with different bandwidths of horizontal arrangement on hole transmission layer；
S4, electron transfer layer is prepared：The spin coating electron transfer layer on perovskite light-absorption layer, spin-coating time 20s, rotation speed
Degree is 2000rpm；
S5, metal electrode layer is prepared：It is less than 3.0 × 10 in vacuum degree-3In the environment of Pa, gold evaporation on the electron transport layer
Belong to electrode layer to get to perovskite solar cell.
Further, before S2 spin coating hole transmission layers, cleaning and ozone treatment are carried out to substrate A, the specific steps are：
Substrate A is sequentially placed into detergent, acetone, deionized water, isopropanol and is cleaned by ultrasonic, every time be cleaned by ultrasonic the time be
Then 15min dries up the substrate A through over cleaning with inert gas, finally, the substrate A after drying is put into smelly in ozone machine
Oxygen handles 10min.
Further, the concrete operations of the S3 are：
A, substrate B is deposited for the first time using mask plate A, opens evaporation source A, evaporation rate range is 12~15nm/
Min, ranging from 230~270 DEG C of evaporating temperature, obtains substrate C；
B, secondary vapor deposition is carried out to substrate C using mask plate B, while opens evaporation source A and evaporation source B, set extinction material
Expect that the evaporation rate ratio of A and light absorbent B is 0.87:0.13, ranging from 230~270 DEG C of evaporating temperature obtains substrate D；
C, substrate D is deposited again using mask plate C, while opens evaporation source A and evaporation source B, set extinction material
Expect that the evaporation rate ratio of A and light absorbent B is 0.8:0.2, ranging from 230~270 DEG C of evaporating temperature obtains substrate E；
D, in a nitrogen environment, substrate E is made annealing treatment, annealing temperature is 110 DEG C, makes to crystallize on hole transmission layer
Go out the perovskite polycrystalline film of different bandwidths.
Beneficial effects of the present invention are as follows：
1, the present invention makes several perovskite polycrystalline film horizontal rows with different bandwidths using evaporation process is blended
Cloth obtains the perovskite solar cell with energy band gradient, overcomes energy level between perpendicular straight arranged perovskite polycrystalline film
Match, the interface problems such as Lattice Matching, improve the open-circuit voltage of perovskite solar cell, widened the absorption spectrum of device,
To improve the energy conversion efficiency of solar cell, and existing spin coating proceeding can be limited by dimensioned area, when
When film layer area is larger, it is unable to control thicknesses of layers, and the film layer that the present invention is obtained by blending evaporation process is compared to existing
Spin coating proceeding for, film quality higher, and even film layer, thickness are easy to control so that device performance is promoted.
2, the present invention can efficiently control the growth of perovskite crystal grain, make perovskite crystal grain using evaporation process is blended
Growth it is more uniform, prepare the perovskite light-absorption layer with energy band gradient, the perovskite polycrystalline film energy of different bandwidths
It enough makes full use of and absorbs most energy in sunlight, to improve the open-circuit voltage of perovskite solar cell,
The energy conversion efficiency of solar cell is improved on the whole.
3, reflection layer is deposited at the glass substrate back side in the present invention, keeps light more between reflection layer and perovskite light-absorption layer
Secondary refraction substantially increases the absorption efficiency of solar energy.
4, perovskite solar battery structure novel and unique of the invention can in conjunction with the blending evaporation process being simple and efficient
The fields such as organic, dye-sensitized solar cells are extended to, improves and opens under the premise of not reducing the energy conversion efficiency of battery
Road voltage, broadening absorption spectrum have the large-scale industry preparation of perovskite solar cell and other field battery
Directive significance.
Description of the drawings
Fig. 1 is the overall structure diagram of the present invention.
Fig. 2 is the light reflection schematic diagram of the present invention.
Fig. 3 is the structural schematic diagram of mask plate A.
Fig. 4 is the structural schematic diagram of mask plate B.
Fig. 5 is the structural schematic diagram of mask plate C.
Reference numeral：1, reflection layer；2, glass substrate；3, transparent conductive electrode layer；4, hole transmission layer；5, perovskite
Light-absorption layer；6, electron transfer layer；7, metal electrode layer；8, incident ray；9, mask plate A；10, mask plate B；11, mask plate C.
Specific implementation mode
In order to which those skilled in the art are better understood from the present invention, below in conjunction with the accompanying drawings with following embodiment and comparison
Present invention is further described in detail for example.
Comparative example 1
Root it is documented that, existing wet method prepares perovskite solar cell and includes the following steps：
Step 1：The cleaning of transparent conductive electrode layer and ozone treatment；
Step 2：The spin coating hole transmission layer on transparent conductive electrode layer；
Step 3：Configure perovskite precursor solution；
Step 4：Perovskite precursor solution is spun on hole transmission layer, is then annealed, crystallizes, obtains perovskite
Light-absorption layer；
Step 5：The spin coating electron transfer layer on perovskite light-absorption layer；
Step 6：Evaporation metal electrode on the electron transport layer.
Under room temperature environment, using xenon lamp simulated solar irradiation, light intensity is AM1.5 (100mW/cm2), test result shows：
The anti-photoelectric transformation efficiency that clears off of perovskite solar cell prepared by wet method is 5.2%, and it is 4.8% just to clear off photoelectric transformation efficiency.
Comparative example 2
Root it is documented that, the preparation method of the existing perovskite solar cell without energy band gradient includes following
Step：
Step 1：The cleaning of transparent conductive electrode layer and ozone treatment；
Step 2：The spin coating hole transmission layer on transparent conductive electrode layer；
Step 3：Vacuum evaporation perovskite light-absorption layer on the hole transport layer；
Step 4：The spin coating electron transfer layer on perovskite light-absorption layer；
Step 5：Vacuum evaporation metal electrode on the electron transport layer.
Under room temperature environment, using xenon lamp simulated solar irradiation, light intensity is AM1.5 (100mW/cm2), test result shows：
The anti-photoelectric transformation efficiency that clears off of perovskite solar cell without energy band gradient is 12.3%, and just clearing off photoelectric transformation efficiency is
11.9%.
Embodiment 1
As shown in Figure 1, the present embodiment provides a kind of based on the mixed perovskite solar-electricity with energy band gradient for steaming technique
Pond, including set gradually from the bottom up reflection layer 1, transparent conductive electrode layer 3, hole transmission layer 4, perovskite light-absorption layer 5,
Electron transfer layer 6 and metal electrode layer 7, perovskite light-absorption layer 5 include by blending evaporation process prepare it is several have different energy
The perovskite polycrystalline film of bandwidth, several perovskite polycrystalline film horizontal alignment arrangements；
The material of reflection layer 1 is metallic silver, thickness 100nm；The material of transparent conductive electrode layer 3 is nano indium tin gold
Belong to oxide ITO, thickness 150nm；The material of hole transmission layer 4 is PEDOT:PSS films, thickness 90nm；Perovskite is inhaled
Photosphere 5 includes the CH that thickness is 250nm3NH3PbI3、CH3NH3Pb(I.087Br0.13)3And CH3NH3Pb(I.08Br0.2)3Three kinds of tools
There is the perovskite polycrystalline film of different bandwidths；The material of electron transfer layer 6 is PC61BM films, thickness 70nm；Metal electrode
The material of layer 7 is metal silver electrode, thickness 100nm.
In the present embodiment, the perovskite light-absorption layer 5 with energy band gradient uses mixed system perovskite material system, device
Part structure is Ag/ITO/PEDOT:PSS/CH3NH3PbI3:CH3NH3Pb(I.087Br0.13)3:CH3NH3Pb(I.08Br0.2)3/
PC61BM/Ag, preparation process are as follows：
S1, reflection layer 1 is prepared：It is less than 5.0 × 10 in vacuum degree-3In the environment of Pa, it is being coated with transparent conductive electrode layer 3
2 back side of glass substrate be deposited reflection layer 1, then in a nitrogen environment cool down 30min, obtain substrate A；
S2, the cleaning of substrate A and ozone treatment：Substrate A is sequentially placed into detergent, acetone, deionized water, isopropanol
It is cleaned by ultrasonic, it is 15min to be cleaned by ultrasonic the time every time, is then dried up the substrate A through over cleaning with inert gas, most
Afterwards, the substrate A after drying is put into ozone treatment 10min in ozone machine；
S3, hole transmission layer 4 is prepared：Spin coating hole transmission layer 4, rotary speed are on transparent conductive electrode layer 3
Then 4000rpm, spin-coating time 20s make annealing treatment hole transmission layer 4, annealing temperature is 150 DEG C, annealing time
For 15min, substrate B is obtained；
S4, perovskite light-absorption layer 5 is prepared：In vacuum evaporation equipment, light absorbent A and light absorbent B are corresponded to respectively
It is fitted into evaporation source A and evaporation source B, by adjusting the evaporation rate ratio of evaporation source A and evaporation source B, substrate B is carried out several times
Vapor deposition, makes several perovskite polycrystalline films with different bandwidths of horizontal arrangement on hole transmission layer, extinction in the present embodiment
Materials A is methylamine lead iodine, and light absorbent B is methylamine lead bromine, and concrete operations are：
A, substrate B is deposited for the first time using mask plate A as shown in Figure 3, opens evaporation source A, evaporation rate is
13nm/min, evaporating temperature are 250 DEG C, obtain substrate C；
B, secondary vapor deposition is carried out to substrate C using mask plate B as shown in Figure 4, while opens evaporation source A and evaporation source B,
The evaporation rate ratio of methylamine lead iodine and methylamine lead bromine is set as 0.87:0.13, evaporating temperature is 250 DEG C, obtains substrate D；
C, substrate D is deposited again using mask plate C as shown in Figure 5, while opens evaporation source A and evaporation source B,
The evaporation rate ratio of methylamine lead iodine and methylamine lead bromine is set as 0.8:0.2, evaporating temperature is 250 DEG C, obtains substrate E；
D, in a nitrogen environment, substrate E is made annealing treatment, annealing temperature is 110 DEG C, makes to tie on hole transmission layer 4
Crystalline substance goes out the perovskite polycrystalline film of different bandwidths；
S5, electron transfer layer 6 is prepared：The spin coating electron transfer layer 6 on perovskite light-absorption layer 5, spin-coating time 20s, rotation
Rotary speed is 2000rpm, then makes annealing treatment 1h in the environment of 110 DEG C；
S6, metal electrode layer 7 is prepared：It is less than 3.0 × 10 in vacuum degree-3In the environment of Pa, it is deposited on electron transfer layer 6
Metal electrode layer 7 is to get to perovskite solar cell.
Under room temperature environment, using xenon lamp simulated solar irradiation, light intensity is AM1.5 (100mW/cm2), as shown in Fig. 2, making light
Beam oblique incidence solar cell device, test result show：The counter of perovskite solar cell with energy band gradient clears off
Photoelectric transformation efficiency is 14.5%, and it is 15.1% just to clear off photoelectric transformation efficiency.
Embodiment 2
Preparation method is substantially the same manner as Example 1, and difference lies in the vapor depositions of perovskite light-absorption layer 5：Using mask plate B to base
When plate C carries out vacuum evaporation, methylamine lead iodine and the evaporation rate ratio of methylamine lead bromine are set as 0.7:0.3, evaporating temperature equally controls
At 250 DEG C；When then mask plate C being used to carry out vacuum evaporation to base D, methylamine lead iodine and the evaporation rate ratio of methylamine lead bromine are set as
0.6:0.4, evaporating temperature equally control is at 250 DEG C.
Under room temperature environment, using xenon lamp simulated solar irradiation, light intensity is AM1.5 (100mW/cm2), equally light beam is made to tilt
Incident solar cell device, test result show：The counter of perovskite solar cell with energy band gradient sweeps opto-electronic conversion
Efficiency is 13.1%, and it is 12.8% just to clear off photoelectric transformation efficiency.
The above, only presently preferred embodiments of the present invention, are not intended to limit the invention, patent protection model of the invention
It encloses and is subject to claims, equivalent structure variation made by every specification and accompanying drawing content with the present invention, similarly
It should be included within the scope of the present invention.
Claims (10)
1. a kind of steaming the perovskite solar cell with energy band gradient of technique based on mixed, including set gradually from the bottom up
Reflection layer (1), transparent conductive electrode layer (3), hole transmission layer (4), perovskite light-absorption layer (5), electron transfer layer (6) and gold
Belong to electrode layer (7), it is characterised in that：The perovskite light-absorption layer (5) include by blending evaporation process prepare it is several have not
With the perovskite polycrystalline film of bandwidth, several perovskite polycrystalline film horizontal alignment arrangements.
2. a kind of perovskite solar cell with energy band gradient based on mixed steaming technique according to claim 1,
It is characterized in that：Several perovskite polycrystalline films by different evaporation rates than light absorbent A and light absorbent B in vacuum environment
In repeatedly be blended vapor deposition be made.
3. a kind of perovskite solar cell with energy band gradient based on mixed steaming technique according to claim 2,
It is characterized in that：Vapor deposition is blended three times in the light absorbent A and light absorbent B in vacuum environment, wherein vapor deposition is blended for the first time
When, the evaporation rate ratio of light absorbent A and light absorbent B is 1:0；When second of blending vapor deposition, light absorbent A and light absorbent
The evaporation rate ratio of B is 0.87:0.13；When vapor deposition is blended in third time, the evaporation rate ratio of light absorbent A and light absorbent B is
0.8:0.2。
4. a kind of perovskite solar cell with energy band gradient based on mixed steaming technique according to claim 1-3,
It is characterized in that：The thickness range of the perovskite light-absorption layer (5) is 100~500nm.
5. a kind of perovskite solar cell with energy band gradient based on mixed steaming technique according to claim 4,
It is characterized in that：The thickness range of the reflection layer (1) is 90~110nm, and it includes but not limited to gold, silver, aluminium that its material, which is,
Any one of.
6. a kind of perovskite solar cell with energy band gradient based on mixed steaming technique according to claim 4,
It is characterized in that：The thickness range of the transparent conductive electrode layer (3) is 130~170nm, and its material is nano indium tin metal oxygen
Compound ITO.
7. a kind of perovskite solar cell with energy band gradient based on mixed steaming technique according to claim 4,
It is characterized in that：The thickness range of the hole transmission layer (4) is 80~100nm, and it includes but not limited to PEDOT that its material, which is,:
PSS、CuSCN、CuI、NiOxAny one of；The thickness range of the electron transfer layer (6) is 60~80nm, and its material is
Including but not limited to fullerene derivate PCBM, TiO2Or ZnO's is any；The thickness range of the metal electrode layer (7) is
80~120nm, and its material be include but not limited to gold, silver, aluminium electrode, nano silver wire or conductive polymer film any
Kind.
8. a kind of preparation method based on the mixed perovskite solar cell with energy band gradient for steaming technique, which is characterized in that
Include the following steps：
S1, reflection layer (1) is prepared：It is less than 5.0 × 10 in vacuum degree-3In the environment of Pa, it is being coated with transparent conductive electrode layer (3)
Glass substrate (2) back side vapor deposition reflection layer (1), obtain substrate A；
S2, hole transmission layer (4) is prepared：The spin coating hole transmission layer (4) on transparent conductive electrode layer (3) then passes hole
Defeated layer (4) is made annealing treatment, and substrate B is obtained；
S3, perovskite light-absorption layer (5) is prepared：In vacuum evaporation equipment, light absorbent A and light absorbent B is corresponded to respectively and is filled
Enter in evaporation source A and evaporation source B, by adjusting the evaporation rate ratio of evaporation source A and evaporation source B, substrate B is steamed several times
Plating, makes several perovskite polycrystalline films with different bandwidths of horizontal arrangement on hole transmission layer (4)；
S4, electron transfer layer (6) is prepared：The spin coating electron transfer layer (6) on perovskite light-absorption layer (5), spin-coating time 20s,
Rotary speed is 2000rpm；
S5, metal electrode layer (7) is prepared：It is less than 3.0 × 10 in vacuum degree-3In the environment of Pa, it is deposited on electron transfer layer (6)
Metal electrode layer (7) is to get to perovskite solar cell.
9. a kind of system based on the mixed perovskite solar cell with energy band gradient for steaming technique according to claim 8
Preparation Method, it is characterised in that：Before S2 spin coatings hole transmission layer (4), cleaning and ozone treatment are carried out to substrate A, it is specific to walk
Suddenly it is：Substrate A is sequentially placed into detergent, acetone, deionized water, isopropanol and is cleaned by ultrasonic, when being cleaned by ultrasonic every time
Between be 15min, the substrate A through over cleaning is dried up with inert gas then, finally, the substrate A after drying is put into ozone machine
Middle ozone treatment 10min.
10. a kind of perovskite solar cell with energy band gradient based on mixed steaming technique according to claim 8
Preparation method, which is characterized in that the concrete operations of the S3 are：
A, substrate B is deposited for the first time using mask plate A (9), opens evaporation source A, evaporation rate range is 12~15nm/
Min, ranging from 230~270 DEG C of evaporating temperature, obtains substrate C；
B, secondary vapor deposition is carried out to substrate C using mask plate B (10), while opens evaporation source A and evaporation source B, set extinction material
Expect that the evaporation rate ratio of A and light absorbent B is 0.87:0.13, ranging from 230~270 DEG C of evaporating temperature obtains substrate D；
C, substrate D is deposited again using mask plate C (11), while opens evaporation source A and evaporation source B, set extinction material
Expect that the evaporation rate ratio of A and light absorbent B is 0.8:0.2, ranging from 230~270 DEG C of evaporating temperature obtains substrate E；
D, in a nitrogen environment, substrate E is made annealing treatment, annealing temperature is 110 DEG C, makes to crystallize on hole transmission layer (4)
Go out the perovskite polycrystalline film of different bandwidths.
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| CN105144395A (en) * | 2012-08-30 | 2015-12-09 | 陶氏环球技术有限责任公司 | Spectral light splitting module and photovoltaic system including concentrator optics |
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| CN105144395A (en) * | 2012-08-30 | 2015-12-09 | 陶氏环球技术有限责任公司 | Spectral light splitting module and photovoltaic system including concentrator optics |
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| GIULIA LONGO ET AL.: ""Fully Vacuum-Processed Wide Band Gap Mixed-Halide Perovskite Solar Cells"", 《ACS ENERGY LETTERS》 * |
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| CN111244286A (en) * | 2020-01-21 | 2020-06-05 | 电子科技大学 | Preparation method and application of horizontal continuously-graded planar perovskite thin film |
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Effective date of registration: 20230314 Address after: Room 104, No. 898 Baicao Road, Gaoxin District, Chengdu, Sichuan 610000 Patentee after: Sichuan Hengli Juneng Photoelectric Technology Co.,Ltd. Address before: 611731, No. 2006, West Avenue, Chengdu hi tech Zone (West District, Sichuan) Patentee before: University of Electronic Science and Technology of China |