CN108389963A - A kind of conductive filament mechanism study device and preparation method thereof, application - Google Patents
A kind of conductive filament mechanism study device and preparation method thereof, application Download PDFInfo
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- CN108389963A CN108389963A CN201810270745.8A CN201810270745A CN108389963A CN 108389963 A CN108389963 A CN 108389963A CN 201810270745 A CN201810270745 A CN 201810270745A CN 108389963 A CN108389963 A CN 108389963A
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- 230000007246 mechanism Effects 0.000 title claims abstract description 72
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 16
- 150000002367 halogens Chemical class 0.000 claims abstract description 16
- 238000011065 in-situ storage Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000004615 ingredient Substances 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 6
- 238000004611 spectroscopical analysis Methods 0.000 claims abstract description 6
- 229910052792 caesium Inorganic materials 0.000 claims description 14
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 150000004820 halides Chemical class 0.000 claims description 9
- -1 methylamine lead halide Chemical class 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical group Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 claims description 2
- FZHSXDYFFIMBIB-UHFFFAOYSA-L diiodolead;methanamine Chemical compound NC.I[Pb]I FZHSXDYFFIMBIB-UHFFFAOYSA-L 0.000 claims description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 2
- MJFXORGVTOGORM-UHFFFAOYSA-L lead(2+) methanamine dibromide Chemical compound [Pb+2].[Br-].CN.[Br-] MJFXORGVTOGORM-UHFFFAOYSA-L 0.000 claims description 2
- PEKFRNRSUCMVPD-UHFFFAOYSA-L [Pb](Cl)Cl.CN Chemical group [Pb](Cl)Cl.CN PEKFRNRSUCMVPD-UHFFFAOYSA-L 0.000 claims 1
- 238000004458 analytical method Methods 0.000 abstract description 8
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000011160 research Methods 0.000 abstract description 4
- 238000012544 monitoring process Methods 0.000 abstract description 3
- 238000010223 real-time analysis Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 230000015654 memory Effects 0.000 description 7
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical group CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000026030 halogenation Effects 0.000 description 2
- 238000005658 halogenation reaction Methods 0.000 description 2
- 239000003495 polar organic solvent Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 1
- NEHMKBQYUWJMIP-UHFFFAOYSA-N anhydrous methyl chloride Natural products ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229940050176 methyl chloride Drugs 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
The present invention provides conductive filament mechanism study devices of a kind of resistor type random access memory and preparation method thereof, using, by the halogen perovskite material that selects ion mobility characteristics strong as preparing resistive active layer material, simultaneous selection active metal prepares horizontal both ends metal electrode by the mask plate with raceway groove, construct conductive filament mechanism study device, in-situ monitoring is carried out with ingredient to the formation of conductive filament in the conductive filament mechanism study device by scanning electron microscope and energy disperse spectroscopy, it is simple that there is analysis method provided by the present invention device to prepare, viewing area is big, instrumentation is easy, the advantages that in-situ dynamic observation conductive filament forming process and in real time analysis conductive filament ingredient can be achieved, with referentiability, it can be widely applied for the research field of RRAM conductive filament mechanism.
Description
Technical field
The present invention relates to the conductive filament technical field of random access memory more particularly to a kind of resistor type random access memories
Conductive filament mechanism study device and preparation method thereof, application.
Background technology
Resistor type random access memory（RRAM）It is considered as because of the potential that its simple device architecture and high density store
It is a kind of new technology in most possible substitution flash memory storage area.The currently conductive filament mechanism about one of the resistive mechanism of RRAM
Research it is more, still, the formation of conductive filament has randomness and inhomogeneities, existing grinding based on conductive filament mechanism
Study carefully the sample making technology for still relying on expensive instrument and complexity, passes through in situ TEM（TEM）Technology is seen
It examines, expends a large amount of human and material resources.
Therefore, the existing technology needs to be improved and developed.
Invention content
In view of the deficiencies in the prior art, the purpose of the present invention is to provide a kind of conductive filaments of resistor type random access memory
Mechanism study device and preparation method thereof, application, to solve existing resistor type random access memory conductive filament Analysis on Mechanism skill
Art difficulty is high, instrument dependence is strong and the problem of being not easy in-situ observation.
Technical scheme is as follows：
A kind of conductive filament mechanism study device of resistor type random access memory, wherein including:Substrate is arranged in the substrate
On resistive active layer and the electrode with raceway groove is set on the resistive active layer, the material of the electrode is active gold
Belong to, the material of the resistive active layer is halogen perovskite.
The conductive filament mechanism study device of the resistor type random access memory, wherein the halogen perovskite is first
Amine lead halide or lead halide caesium.
The conductive filament mechanism study device of the resistor type random access memory, wherein the thickness of the resistive active layer
Degree is 30-80nm.
The conductive filament mechanism study device of the resistor type random access memory, wherein the active metal be Ag,
One kind in Pt, Cu.
The conductive filament mechanism study device of the resistor type random access memory, wherein the electrode with raceway groove,
The width of raceway groove is 5-50 μm.
The conductive filament mechanism study device of the resistor type random access memory, wherein the thickness of the electrode is 80-
100nm。
The conductive filament mechanism study device of the resistor type random access memory, wherein the methylamine lead halide is first
Amine lead chloride, methylamine lead bromide or methylamine lead iodide；The lead halide caesium is lead chloride caesium, lead bromide caesium or lead iodide caesium.
The preparation method of the conductive filament mechanism study device of the resistor type random access memory, wherein including step：
The spin coating halogen perovskite solution in substrate obtains resistive active layer；
The electrode with raceway groove is prepared on the resistive active layer, obtains conductive filament mechanism study device.
The preparation method of the conductive filament mechanism study device of the resistor type random access memory, which is characterized in that institute
It states step and prepares the electrode with raceway groove on the resistive active layer, obtaining conductive filament mechanism study device is specially：
By active metal material in the form of thermal evaporation, by the mask plate with raceway groove, formed on the resistive active layer
Electrode obtains conductive filament mechanism study device.
The application of the conductive filament mechanism study device of the resistor type random access memory, wherein including step：
Different voltage is applied to the conductive filament mechanism study device of the resistor type random access memory, the resistance of device is made to send out
Changing；
Conductive filament forming process is carried out to the conductive filament mechanism study device of different resistance values by scanning electron microscope
In situ detection and the conductive filament mechanism study device ingredient is analyzed in real time by energy disperse spectroscopy.
Advantageous effect：The present invention is active as resistive is prepared by the halogen perovskite material for selecting ion mobility characteristics strong
Layer material, simultaneous selection active metal are prepared horizontal both ends metal electrode by the mask plate with raceway groove, construct and lead
Electric filament mechanism study device, by scanning electron microscope and energy disperse spectroscopy to being led in the conductive filament mechanism study device
The formation of electric filament carries out in-situ monitoring with ingredient, and there is analysis method provided by the present invention device to prepare simple, viewing surface
Product is big, instrumentation is easy, in-situ dynamic observation conductive filament forming process can be achieved and real-time analysis conductive filament ingredient
The advantages that, there is referentiability, can be widely applied for the research field of RRAM conductive filament mechanism.
Description of the drawings
Fig. 1 is the structural schematic diagram of the conductive filament mechanism study device of the present invention.
Fig. 2 is the conductive filament mechanism study device preparation method flow chart of the present invention.
Fig. 3 is the conductive filament mechanism study device applicating flow chart of the present invention.
Fig. 4 present invention's passes through SEM scan electrode channel regions, conductive filament formation schematic diagram.
Fig. 5 is SEM the and EDX Measurement results figures of the embodiment of the present invention conductive filament.
Specific implementation mode
To make the purpose of the present invention, technical solution and effect clearer, clear and definite, below to the present invention further specifically
It is bright.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
Referring to Fig. 1, it is based in RRAM conductive filament mechanism based method analysis, conductive filament mechanism study device junction
Structural schematic diagram, as shown in Figure 1 comprising：Substrate 1, the resistive active layer 2 being arranged in the substrate 1 and setting are in institute
The electrode 3 that raceway groove is carried on resistive active layer 2 is stated, the material of the electrode is active metal, the material of the resistive active layer
For halogen perovskite.
In a specific embodiment, the material of the substrate 1 is electrically non-conductive material, and the substrate can be as an example
SiO2/Si pieces, PET sheet, PEN pieces etc..The halogen perovskite material that the variable resistance active layer 2 selects ion mobility characteristics strong as
Resistive active layer material is prepared, the halogen perovskite is methylamine lead halide or lead halide caesium.The material of the electrode 3 is active
Metal, the active metal can be one kind in Ag, Pt, Cu as an example.
The present invention by the halogen perovskite material that selects ion mobility characteristics strong as resistive active layer material is prepared, together
When selection active metal prepare horizontal both ends metal electrode by the mask plate with raceway groove, it is constructed go out conductive filament
Mechanism study device has the characteristics that preparation is simple, viewing area is big.
Further, the present invention also provides the methods for preparing above-mentioned conductive filament mechanism study device, as shown in Fig. 2, packet
Include step：
S100, the spin coating halogen perovskite solution in substrate obtain resistive active layer；
S200, the electrode with raceway groove is prepared on the resistive active layer, obtain conductive filament mechanism study device.
In a specific embodiment, before the step S100, halogen perovskite solution is made first, it is described
Halogen perovskite solution preparation method includes：
It is dissolved in highly polar organic solvent, stirs after methyl halogeno-amine, caesium halide are mixed with lead halide according to a certain percentage respectively
It mixes reaction and obtains methylamine halogenation lead solution in 12 hours（CH3NH3PbX3,X=Cl,Br,I）Or lead halide caesium solution（CsPbX3,X=
Cl,Br,I）, wherein the highly polar organic solvent is dimethylformamide or dimethyl sulfoxide solution.
The CH3NH3PbX3Or CsPbX3Solution has adjustable energy band band gap, the charge diffusivity of long range, magnetic
The properties such as property and dielectric polarity.These properties make CH3NH3PbX3Or CsPbX3Show unique excellent electric property
With Ion transfer performance, it can be used for Ion transfer and formed in the mechanism study of conductive filament.
Further, in clean substrate（Such as SiO2/Si pieces）Upper spin coating methylamine halogenation lead solution or lead halide caesium solution, shape
At resistive active layer.The thickness of the resistive active layer is 30-80nm；When being made annealing treatment to the resistive active layer,
The annealing temperature is 80-100 DEG C, time 1-2h.For example, can be by adjusting spin coating rotating speed 1500-3500rmp and concentration
0.05-0.3mg/ml is adjusted, and the thickness of the resistive active layer is made to be 50nm, when annealing temperature control be in 85 DEG C, time
1h.Prepared resistive active layer uniform film thickness at this time, electric property and Ion transfer performance are best.
The step 200 be by active metal material in the form of thermal evaporation, electricity is formed by the mask plate with raceway groove
Pole obtains conductive filament mechanism study device.
Specifically, using active metal Ag, Pt or Cu in the form of thermal evaporation, pass through the mask plate shape with raceway groove
It is final to obtain conductive filament mechanism study device at metallic top electrode.
Using active metal as electrode, different degrees of metal ion transport property can be realized under different voltages,
Be conducive to metallic conduction filament Analysis on Mechanism.
Further, the thickness of the metal electrode is 80-100nm（Such as 100nm）.For example, can be by the work of 80-100nm
Metal is sprinkled with the speed of 0.2nm/s 10-6Under the vacuum degree of Torr in the form of thermal evaporation, pass through the mask plate shape with raceway groove
It it is 5-50 μm at electrode channel width（Such as 25 μm）Metal electrode.
In the present invention, the application of conductive filament mechanism study device is additionally provided, as shown in figure 3, the application includes such as
Lower step：
ST1, different voltage is applied to the conductive filament mechanism study device of the resistor type random access memory, makes the electricity of device
Resistance changes；
ST2, the conductive filament mechanism study device progress conductive filament of different resistance values is formed by scanning electron microscope
The in situ detection of process and the conductive filament mechanism study device ingredient is analyzed in real time by energy disperse spectroscopy.
Specifically, to RRAM resistance values carry out test characterizing method be：It is partly led using Keithley4200 on probe station
Body parameter analyzer measures the electric property of memory.Voltage takes the mode that unidirectional line is swept, when voltage reaches setting（SET）Electricity
When pressure, electric current can become larger suddenly, and memory can be by high-impedance state（HRS）It is converted to low resistance state（LRS）, i.e. conductive filament formed completely
State.When backward voltage reaches reseting procedure（RESET）When voltage, electric current can become smaller suddenly, and memory transforms back into HRS by LRS,
As conductive filament is broken apart completely.WORM（Write-one-read-many-times, write-once are repeatedly read）Type is deposited
Conductive filament in reservoir cannot then be broken apart completely, and LRS states never return to HRS states.BRS（bipolar
Resistive switching, bipolarity switch）The complete fracture of conductive filament then may be implemented in type memory.
In the present invention, carrying out home position testing method to memory conductive filament is：With SEM combination EDX technologies to conductive thin
The conductive filament that silk mechanism study device carries out flexible memory is formed and at the in-situ test being grouped as.Item is prepared based on identical
The device of part carries out electrical performance testing using a series of different voltages, analyzes its resistance variations situation.To with different electricity
The horizontal device of resistance.The situation of change that SEM tests monitor its conductive filament is carried out to its channel region, conductive filament was formed
Journey schematic diagram is as shown in Figure 4.
In a specific embodiment, the step ST1 is specifically included：
By probe station, to the conductive filament mechanism study device under series of identical preparation condition on Semiconductor Parameter Analyzer
Part applies different voltage values, for example, applying voltage by forward direction, by 2 V, 4 V, 6 V, 10 V, 20 V, 40 V's is suitable
Sequence increases voltage by the speed of 0.001V/ms and reaches last voltage setting value, is added in the one of conductive filament mechanism study device
In lateral electrode, the change in resistance situation of device is further measured by Semiconductor Parameter Analyzer.
The step ST2 is specifically included：
By the device of different resistance values in scanning electron microscope（SEM）Under its channel region is observed, and Momentum profiles instrument
（EDX）Technology carries out microregion element analysis along the rectilinear direction perpendicular to raceway groove.
It is elaborated below to the present invention with specific embodiment.
Embodiment
It is dissolved in solvent dimethylformamide, is stirred to react after methyl chloride amine is mixed with lead chloride according to a certain percentage
Obtain CH within 12 hours3NH3PbCl3Solution；The spin coating CH on clean substrate3NH3PbCl3Solution forms CH3NH3PbCl3Resistive
Active layer carries out annealing 1h at 100 DEG C later；The silver electrode of 100nm thickness is steamed with heat on resistive active layer after annealing
The form of hair is finally obtained by forming metal electrode with the mask plate that width is 5 μm of raceway grooves based on CH3NH3PbCl3Lead
Electric filament mechanism study device.On probe station the conductive filament is measured using Keithley4200 Semiconductor Parameter Analyzers
The electric property of mechanism study device.And in such a way that the unidirectional line of voltage is swept, with the speed of 0.001 V/ms in conductive filament
Apply the voltage that end value is 40 V in the silver electrode of mechanism study device side so that horizontal device is ultimately at the low of unlatching
Resistance state carries out test analysis by SEM and EDX, and the results are shown in Figure 5.
In conclusion the present invention provides a kind of analytic approach of the conductive filament based on resistance random access memory, pass through choosing
The strong halogen perovskite material of ion mobility characteristics is selected as resistive active layer material is prepared, simultaneous selection active metal passes through band
There is the mask plate of raceway groove to prepare horizontal two end electrodes, constructs conductive filament mechanism study device, it is aobvious by scanning electron
Micro mirror and energy disperse spectroscopy carry out in-situ monitoring to the formation of conductive filament in the conductive filament mechanism study device with ingredient, this
There is the provided analysis method of invention device to prepare, and simple, viewing area is big, instrumentation is easy, dynamic in situ can be achieved sees
The advantages that examining conductive filament forming process and in real time analysis conductive filament ingredient, has referentiability, can be widely applied for
The research field of RRAM conductive filament mechanism.
It should be understood that the application of the present invention is not limited to the above for those of ordinary skills can
With improvement or transformation based on the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect range.
Claims (10)
1. a kind of conductive filament mechanism study device of resistor type random access memory, which is characterized in that including:Substrate, setting exist
Resistive active layer in the substrate and the electrode with raceway groove, the material of the electrode are set on the resistive active layer
Material for active metal, the resistive active layer is halogen perovskite.
2. the conductive filament mechanism study device of resistor type random access memory according to claim 1, which is characterized in that institute
It is methylamine lead halide or lead halide caesium to state halogen perovskite.
3. the conductive filament mechanism study device of resistor type random access memory according to claim 1, which is characterized in that institute
The thickness for stating resistive active layer is 30-80nm.
4. the conductive filament mechanism study device of resistor type random access memory according to claim 1, which is characterized in that institute
It is one kind in Ag, Pt, Cu to state active metal.
5. the conductive filament mechanism study device of resistor type random access memory according to claim 1, which is characterized in that institute
The electrode with raceway groove is stated, the width of raceway groove is 5-50 μm.
6. the conductive filament mechanism study device of resistor type random access memory according to claim 5, which is characterized in that institute
The thickness for stating electrode is 80-100nm.
7. the conductive filament mechanism study device of resistor type random access memory according to claim 2, which is characterized in that institute
It is methylamine lead chloride, methylamine lead bromide or methylamine lead iodide to state methylamine lead halide；The lead halide caesium is lead chloride caesium, lead bromide
Caesium or lead iodide caesium.
8. a kind of preparation side of the conductive filament mechanism study device of the resistor type random access memory as described in claim 1-7 is any
Method, which is characterized in that including step：
The spin coating halogen perovskite solution in substrate obtains resistive active layer；
The electrode with raceway groove is prepared on the resistive active layer, obtains conductive filament mechanism study device.
9. the preparation method of the conductive filament mechanism study device of resistor type random access memory according to claim 8,
It is characterized in that, the step prepares the electrode with raceway groove on the resistive active layer, obtains conductive filament mechanism study device
Part is specially：
By active metal material in the form of thermal evaporation, by the mask plate with raceway groove, formed on the resistive active layer
Electrode obtains conductive filament mechanism study device.
10. a kind of application of the conductive filament mechanism study device of the resistor type random access memory as described in claim 1-7 is any,
It is characterised in that it includes step：
Different voltage is applied to the conductive filament mechanism study device of the resistor type random access memory, the resistance of device is made to send out
Changing；
Conductive filament forming process is carried out to the conductive filament mechanism study device of different resistance values by scanning electron microscope
In situ detection and the conductive filament mechanism study device ingredient is analyzed in real time by energy disperse spectroscopy.
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| WO2022262650A1 (en) * | 2021-06-18 | 2022-12-22 | 复旦大学 | Two-way threshold symmetric gating device and preparation method therefor |
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