CN108389826A - Expand the film and preparation method thereof of film for crystal grain - Google Patents
Expand the film and preparation method thereof of film for crystal grain Download PDFInfo
- Publication number
- CN108389826A CN108389826A CN201810139334.5A CN201810139334A CN108389826A CN 108389826 A CN108389826 A CN 108389826A CN 201810139334 A CN201810139334 A CN 201810139334A CN 108389826 A CN108389826 A CN 108389826A
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- Prior art keywords
- film
- glue
- crystal grain
- point
- expanding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000013078 crystal Substances 0.000 title claims abstract description 73
- 238000002360 preparation method Methods 0.000 title abstract description 3
- 239000003292 glue Substances 0.000 claims abstract description 102
- 239000012790 adhesive layer Substances 0.000 claims abstract description 38
- 239000012528 membrane Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 17
- 239000010410 layer Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000011159 matrix material Substances 0.000 claims description 16
- -1 polypropylene Polymers 0.000 claims description 8
- 230000001788 irregular Effects 0.000 claims description 6
- 239000004698 Polyethylene Substances 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 229920001155 polypropylene Polymers 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 229920002647 polyamide Polymers 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
- H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Adhesive Tapes (AREA)
Abstract
The invention belongs to semiconductor applications, more particularly, to crystal grain expands the film and preparation method thereof of film, include base film and the adhesive layer on base film in one embodiment, the adhesive layer is made of a plurality of point-like glues discontinuously arranged, and the size of the point-like glue is less than the size of crystal grain.The present invention will be in that the tiling equally distributed adhesive layer of shape is improved to the adhesive layer being made of the point-like glue discontinuously arranged in the prior art, when expanding film, crystal grain is then placed on point-like glue, and it is adhered on base film by point-like glue, when the base film is by force-extension, the deformation quantity that point-like glue is stretched with base film and is generated is smaller, in subsequently removal crystal grain, the glue adhered on crystal grain is less, so as to improve glue stain problem of the crystal grain when expanding film.
Description
Technical field
The invention belongs to semiconductor applications more particularly to it is a kind of prevent crystal grain cause because expanding film the dirty dye of glue for crystalline substance
The production method that grain expands the film and the film of film.
Background technology
In the manufacturing process of semiconductor devices, often make during being cut into crystal grain by wafer or after the completion of cutting
With stickup film（Such as in LED chip, usually using indigo plant membrane adhesive tape or tunica albuginea adhesive tape）It accepts and carries out expansion film.
Referring to attached Fig. 1 and 2, it is distributed toughness glue 20, crystal grain 30 with usually pasting single side or the double-faced uniform of film 10
It is fixed on to paste by being adhered on sticky glue 20 and carries out expansion film on film 10.And when expanding film, sticky glue 20 is by external force F
It stretches, is easily adhered to 30 surface of crystal grain and is not easy to remove, to lead to the problem of glue stain, and by the crystal grain of glue stain in light
Electrically and encapsulate etc. can all have negative effect.
Invention content
Caused glue stain, the present invention are provided in its one side and are used for when to solve the problems, such as crystal grain expansion film in the prior art
Crystal grain expands the film of film, including base film and the adhesive layer on base film, it is characterised in that：The adhesive layer is by plural number
A point-like glue composition discontinuously arranged, the size of the point-like glue are less than the size of crystal grain.
Preferably, perforated membrane is additionally provided on the adhesive layer, the perforated membrane has a plurality of holes, described hole
Position is corresponding with point-like glue position.
Preferably, the sheet glue of adhesive matrix film and perforated membrane is additionally provided between described matrix film and perforated membrane.
Preferably, the sheet glue is integrally formed with point-like glue.
Preferably, the size range of the point-like glue is 0.1-10 μm, and spacing range is 0.1-10 μm.
Preferably, the shape of the point-like glue is round, rectangular, triangle or irregular shape.
Preferably, the material of the point-like glue or sheet glue is acrylic glue or rubber.
Preferably, the point-like glue rule or irregular alignment.
Preferably, the material identical or difference of described matrix film and perforated membrane is in polypropylene, polyethylene and polyamide
Any one.
Preferably, described matrix film is identical or different with the thickness of perforated membrane.
Preferably, the upper surface of the point-like glue and perforated membrane upper surface flush or the upper surface higher than perforated membrane.
For the film for expanding film for crystal grain for making above-mentioned, the present invention provides following production methods, in one making side
In method, include the following steps：
S11, a base film is provided；
S21, on described matrix film be arranged Web materials layer；
S31, in coating adhesive layer on the Web materials layer；
S41, removal Web materials layer, in the bonding that formation is made of a plurality of point-like glues discontinuously arranged on described matrix film
Layer, the size of the point-like glue are less than the size of crystal grain.
Secondly in production method, expands the production method of the film of film for crystal grain, include the following steps：
S12, a base film is provided；
S22, in coating adhesive layer on described matrix film；
S32, perforated membrane is set to bonding layer surface, perforated membrane has a plurality of holes；
S42, apply certain pressure to perforated membrane, the adhesive layer to perforated membrane side is prominent from forming discontinuous arrangement in hole
Point-like glue, the size of the point-like glue is less than the size of crystal grain.
Wherein, in the step S42, all the adhesive layers to perforated membrane side is prominent from forming discontinuous row in hole
The point-like glue of row.Alternatively, the part adhesive layer is to perforated membrane side is prominent from forming the point-like glue discontinuously arranged in hole,
Remainder adhesive layer forms sheet glue, the attached base film of the sheet gluing and perforated membrane and is integrally formed with point-like glue.
The present invention will be in that the tiling equally distributed adhesive layer of shape is improved to the point-like glue by discontinuously arranging in the prior art
The adhesive layer of composition, when expanding film, crystal grain is then placed on point-like glue, and is adhered on base film by point-like glue, the base film
When by force-extension, the deformation quantity that point-like glue is stretched with base film and is generated is smaller, thus in subsequently removal crystal grain, crystal grain
The glue of upper adherency is less, so as to improve glue stain problem of the crystal grain when expanding film.
Description of the drawings
Fig. 1 is the film and crystal grain schematic top plan view for being used for crystal grain in the prior art and expanding film.
Fig. 2 is the film and crystal grain schematic side view for being used for crystal grain in the prior art and expanding film.
Fig. 3 is the film and crystal grain schematic top plan view for expanding film for crystal grain of embodiments of the present invention one.
Fig. 4 is the film and crystal grain schematic side view for expanding film for crystal grain of embodiments of the present invention one.
Fig. 5 is the production method flow chart of the film for expanding film for crystal grain of embodiments of the present invention one.
Fig. 6 is the film and crystal grain schematic top plan view for expanding film for crystal grain of embodiments of the present invention two.
Fig. 7 is the film and crystal grain schematic side view for expanding film for crystal grain of embodiments of the present invention two.
Fig. 8 is the production method flow chart of the film for expanding film for crystal grain of embodiments of the present invention two.
Specific implementation mode
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.It should be noted that attached drawing of the invention
It is all made of the non-accurate ratio simplified very much, only to convenient, the apparent aid illustration present invention.
Embodiment 1
Expand the film of film, including base film 100 and adhesive layer 200 disposed thereon, adhesive layer for crystal grain referring to attached drawing 3 ~ 4
200 are made of a plurality of point-like glues 201 discontinuously arranged, and the size of point-like glue 201 is less than the size of crystal grain 300.That is, single
Crystal grain 300 is adhered to by multiple point-like glues 201 on base film 100.The size of point-like glue is micron order, specifically ranging from 0.1-
10 μm, spacing range is 0.1-10 μm.The shape of point-like glue 201 can be round, rectangular, triangle or irregular shape, sheet
It invents and is not particularly limited, preferably circular point-like glue 201 in the present embodiment.The material of point-like glue 201 be acrylic glue or
Rubber, point-like glue 201 have viscosity, crystal grain are adhered on base film 100.201 rule of point-like glue or irregular alignment,
The present embodiment is preferably regularly arranged.The material of base film 100 is any one in polypropylene, polyethylene and polyamide.
Referring to attached drawing 5, expands the production method of the film of film for crystal grain, include the following steps：
S11, a base film 100 is provided；
S21, on base film 100 be arranged Web materials layer；
S31, on Web materials layer coat adhesive layer 200；
S41, removal Web materials layer, are glued in being formed on base film 100 by what a plurality of point-like glues 201 discontinuously arranged formed
Layer 200 is closed, the size of point-like glue 201 is less than the size of crystal grain.
The present invention will be in that the tiling equally distributed adhesive layer of shape is improved to the point-like glue by discontinuously arranging in the prior art
The adhesive layer 200 of 201 compositions, when expanding film, crystal grain 300 is then placed on point-like glue 201, and is adhered to base by point-like glue 201
On body film 100, when the base film 100 is by force-extension, point-like glue 201 be stretched with base film 100 and the deformation quantity that generates compared with
It is small, to which in subsequently removal crystal grain 300, the glue adhered on crystal grain 300 is then less, so as to improve crystal grain 300 when expanding film
Glue stain problem.
Embodiment 2
Referring to attached drawing 6 ~ 7, the film provided in this embodiment for expanding film for crystal grain, production method is easier.With embodiment
Difference lies in be additionally provided with perforated membrane 400, perforated membrane 400 has a plurality of holes, and hole on the present embodiment adhesive layer 200
The position in hole is corresponding with 201 position of point-like glue.Perforated membrane 400 is adhered to by point-like glue 201 on base film 100, perforated membrane 400
Non-point-like glue position with base film 100 is without adhesive layer 200.Specific base film 100, point-like glue 201 are as described in Example 1,
Details are not described herein again.
Wherein, the material of base film 100 and perforated membrane 400 can be identical or different, is polypropylene, polyethylene and poly-
Any one in amide, thickness can be identical or different.The upper surface of point-like glue 201 and 400 upper surface of perforated membrane are neat
Upper surface flat or higher than perforated membrane 400 adheres to crystal grain 300 for convenience of point-like glue 201, point-like glue 201 in the present embodiment
Upper surface is higher than the upper surface of perforated membrane 400.
Referring to attached drawing 8, expands the production method of the film of film for crystal grain, include the following steps：
S12, a base film 100 is provided；
S22, on described matrix film coat adhesive layer 200；
S32, perforated membrane 400 is set to 200 surface of adhesive layer, perforated membrane 400 has a plurality of holes；
S42, apply certain pressure to perforated membrane 400, adhesive layer 200 to prominent formed in 400 side of perforated membrane from not connecting in hole
The point-like glue 201 of continuous arrangement, the size of point-like glue 201 are less than the size of crystal grain 300.
In the present embodiment, the pressure that step S42 applies perforated membrane 400 is larger, whole adhesive layers 200 from hole to more
400 side of pore membrane protrudes the point-like glue 201 to be formed and discontinuously be arranged, the non-point-like glue position of perforated membrane 400 and base film 100 without
Adhesive layer 200, perforated membrane 400 are adhered to by point-like glue 201 on base film 100.
The production method of the film for expanding film for crystal grain in the present embodiment, in viscous by adhesive layer 200 on base film 100
Attached perforated membrane 400 applies perforated membrane 400 certain pressure, you can adhesive layer 200 is extruded into point-like glue out of hole
201, without removing perforated membrane 400, you can make the film for expanding film for crystal grain with point-like glue 201, production method is simple,
It is easy to operate.
Embodiment 3
Difference lies in the pressure that step S42 applies perforated membrane 400 is smaller, part adhesive layer 200 with implementing 2 for the present embodiment
The point-like glue 201 discontinuously arranged is formed to 400 side of perforated membrane is prominent in from hole, remainder adhesive layer 200 forms piece
Shape glue, the attached base film 100 of sheet gluing and perforated membrane 400 are simultaneously integrally formed with point-like glue 201.
The film for expanding film for crystal grain made by this method, in structure, between base film 100 and perforated membrane 400 then
Sheet glue with adhesive matrix film 100 Yu perforated membrane 400.Sheet glue is integrally formed with point-like glue 201, and material is acrylic glue
Or rubber.
It should be understood that above-mentioned specific embodiment is the preferred embodiment of the present invention, the scope of the present invention is not limited to
The embodiment, all any changes done according to the present invention, all belongs within protection scope of the present invention.
Claims (15)
1. expanding the film of film, including base film and the adhesive layer on base film for crystal grain, it is characterised in that：It is described viscous
It closes layer to be made of a plurality of point-like glues discontinuously arranged, the size of the point-like glue is less than the size of crystal grain.
2. the film according to claim 1 for expanding film for crystal grain, it is characterised in that：It is additionally provided on the adhesive layer more
Pore membrane, the perforated membrane have a plurality of holes, the position of described hole corresponding with point-like glue position.
3. the film according to claim 2 for expanding film for crystal grain, it is characterised in that：Between described matrix film and perforated membrane
It is additionally provided with the sheet glue of adhesive matrix film and perforated membrane.
4. the film according to claim 3 for expanding film for crystal grain, it is characterised in that：The sheet glue and point-like glue one
Molding.
5. the film for expanding film for crystal grain according to claim 1 ~ 4 any one, it is characterised in that：The point-like glue
Size range is 0.1-10 μm, and spacing range is 0.1-10 μm.
6. the film for expanding film for crystal grain according to claim 1 ~ 4 any one, it is characterised in that：The point-like glue
Shape is round, rectangular, triangle or irregular shape.
7. the film for expanding film for crystal grain according to claim 1 ~ 4 any one, it is characterised in that：The point-like glue or
The material of sheet glue is acrylic glue or rubber.
8. the film for expanding film for crystal grain according to claim 1 ~ 4 any one, it is characterised in that：The point-like glue rule
Then or irregular alignment.
9. the film for expanding film for crystal grain according to claim 2 ~ 4 any one, it is characterised in that：Described matrix film with
The material identical or difference of perforated membrane, for any one in polypropylene, polyethylene and polyamide.
10. the film for expanding film for crystal grain according to claim 2 ~ 4 any one, it is characterised in that：Described matrix film
It is identical or different with the thickness of perforated membrane.
11. the film for expanding film for crystal grain according to claim 2 ~ 4 any one, it is characterised in that：The point-like glue
Upper surface and perforated membrane upper surface flush or the upper surface higher than perforated membrane.
12. expanding the production method of the film of film for crystal grain, include the following steps：
S11, a base film is provided；
S21, on described matrix film be arranged Web materials layer；
S31, in coating adhesive layer on the Web materials layer；
S41, removal Web materials layer, in the bonding that formation is made of a plurality of point-like glues discontinuously arranged on described matrix film
Layer, the size of the point-like glue are less than the size of crystal grain.
13. expanding the production method of the film of film for crystal grain, include the following steps：
S12, a base film is provided；
S22, in coating adhesive layer on described matrix film；
S32, perforated membrane is set to bonding layer surface, perforated membrane has a plurality of holes；
S42, apply certain pressure to perforated membrane, the adhesive layer to perforated membrane side is prominent from forming discontinuous arrangement in hole
Point-like glue, the size of the point-like glue is less than the size of crystal grain.
14. the production method of the film according to claim 13 for expanding film for crystal grain, it is characterised in that：The step
In S42, all the adhesive layers to perforated membrane side is prominent from forming the point-like glue discontinuously arranged in hole.
15. the production method of the film according to claim 13 for expanding film for crystal grain, it is characterised in that：The step
In S42, the part adhesive layer to the prominent point-like glue remainder discontinuously arranged that formed in perforated membrane side from gluing in hole
Layer is closed to form sheet glue, the attached base film of the sheet gluing and perforated membrane and be integrally formed with point-like glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810139334.5A CN108389826A (en) | 2018-02-11 | 2018-02-11 | Expand the film and preparation method thereof of film for crystal grain |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810139334.5A CN108389826A (en) | 2018-02-11 | 2018-02-11 | Expand the film and preparation method thereof of film for crystal grain |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108389826A true CN108389826A (en) | 2018-08-10 |
Family
ID=63068545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810139334.5A Pending CN108389826A (en) | 2018-02-11 | 2018-02-11 | Expand the film and preparation method thereof of film for crystal grain |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108389826A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101157830A (en) * | 2006-10-04 | 2008-04-09 | 日东电工株式会社 | Adhesive sheet for laser processing |
| CN101383277A (en) * | 2007-09-05 | 2009-03-11 | 株式会社迪思科 | Expansion method and expansion apparatus |
| JP2009130332A (en) * | 2007-11-28 | 2009-06-11 | Oki Semiconductor Co Ltd | Manufacturing method of semiconductor device |
| US20130178017A1 (en) * | 2010-06-08 | 2013-07-11 | Stmicroelectronics (Tours) Sas | Method for manufacturing semiconductor chips from a semiconductor wafer |
| CN106206397A (en) * | 2016-08-05 | 2016-12-07 | 厦门市三安光电科技有限公司 | Thin film and the manufacture method of semiconductor device for semiconductor device |
-
2018
- 2018-02-11 CN CN201810139334.5A patent/CN108389826A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101157830A (en) * | 2006-10-04 | 2008-04-09 | 日东电工株式会社 | Adhesive sheet for laser processing |
| CN101383277A (en) * | 2007-09-05 | 2009-03-11 | 株式会社迪思科 | Expansion method and expansion apparatus |
| JP2009130332A (en) * | 2007-11-28 | 2009-06-11 | Oki Semiconductor Co Ltd | Manufacturing method of semiconductor device |
| US20130178017A1 (en) * | 2010-06-08 | 2013-07-11 | Stmicroelectronics (Tours) Sas | Method for manufacturing semiconductor chips from a semiconductor wafer |
| CN106206397A (en) * | 2016-08-05 | 2016-12-07 | 厦门市三安光电科技有限公司 | Thin film and the manufacture method of semiconductor device for semiconductor device |
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Application publication date: 20180810 |
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