CN108387957A - A kind of high quantum dot diffusion barrier and its preparation method and application for covering high briliancy - Google Patents
A kind of high quantum dot diffusion barrier and its preparation method and application for covering high briliancy Download PDFInfo
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- CN108387957A CN108387957A CN201810163911.4A CN201810163911A CN108387957A CN 108387957 A CN108387957 A CN 108387957A CN 201810163911 A CN201810163911 A CN 201810163911A CN 108387957 A CN108387957 A CN 108387957A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
- G02B5/0226—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures having particles on the surface
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/0236—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
- G02B5/0242—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of dispersed particles
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0268—Diffusing elements; Afocal elements characterized by the fabrication or manufacturing method
Abstract
The present invention relates to field of optical films, more particularly relate to a kind of quantum dot diffusion barrier.In order to solve the problems, such as that current quantum dot backlight diffuser plate briliancy loses that big and even light ability is general, the present invention provides a kind of high quantum dot diffusion barrier and its preparation method and application for covering high briliancy.Quantum dot film and diffusion barrier are combined into one by the present invention, and the quantum dot diffusion barrier includes quantum dot substrate layer and is coated on the diffusion layer of substrate layer upper and lower surface, and the quantum dot substrate layer is single-layer membrane structure.Wherein quantum dot substrate layer is capable of providing the higher briliancy of backlight module, and diffusion layer can play the role of correcting light diffusion angle, refraction, reflection and the scattering of light can occur on surface when the light of illuminating source passes through the diffusion particle on diffusion barrier, make the light of backlight is soft equably to disseminate out, solves the problems, such as current quantum dot backlight module non-uniform light.
Description
Technical field
The present invention relates to field of optical films, more particularly relate to a kind of quantum dot diffusion barrier.
Background technology
Liquid crystal display (LCD) as current most common display technology, have been widely used for TV, computer, mobile phone,
And in the display screen of some instruments, because of its excellent display performance, LCD will be most in the quite a long time from now on
One of important display device.
In recent years, people started to pursue more ultimate attainment visual experience, and quantum dot LCD technology is applied and given birth to.With biography
The LCD display technologies of system are identical, and quantum dot is shown and the display device of non-luminescent property, need to provide by backlight module
Even light, thus the quality of backlight module performance directly decide quantum dot displays show quality.The difference of the two exists
In traditional LC D uses white light as light source, and quantum dot liquid crystal display needs blue light to carry out the red green amount in excitation quantum point film
The sub backlight put the light source to obtain white light source, excited by quantum dot and be the purest, therefore it has broader color
Domain is shown and more accurately Color control power, the technology are also regarded as display technology classic so far.
The backlight that quantum dot is shown is divided into straight-down negative and side entering type, and the wherein lamp source of side entering type is located at the two of light guide plate
Side, straight-down negative lamp source are dotted lamp source, are located at the lower section of diffuser plate (Fig. 3 is down straight aphototropism mode set lamp bead distribution schematic diagram).
No matter straight-down negative or side entering type light source its light sent out are all non-uniform for entire picture, i.e., at lamp source
Brightness it is larger, thus cause that complete machine aberration is larger, and picture is uneven, then influence visual effect.And direct-type backlight
Lamp source above generally can be atomized the light of point light source using a diffuser plate, so that point light source is homogenized, but be only used only
Diffuser plate come solve cover sex chromosome mosaicism be far from being enough, the results are shown in Figure 4 (the brightness bigger at lamp bead distribution).In addition to hiding
Outside the poor problem of lid, there is also briliancy to lose big, the low and excessively thick and heavy (thickness of light transmittance for diffuser plate prepared by conventional method
Degree is more than 1mm) the problems such as, it is not particularly suited for lightening now and curving display trend.
It is urgently solved in conclusion developing and having become the technical field suitable for the optical thin film of quantum dot backlight module
A great problem certainly, the optical thin film should meet lightening and curving requirement, also there is enough coverings and higher
Briliancy shows.
Invention content
In order to solve the problems, such as that it is general that current quantum dot backlight diffuser plate briliancy loses big and even light ability, the present invention provides
A kind of high quantum dot diffusion barrier and its preparation method and application for covering high briliancy.Quantum dot film and diffusion barrier are closed two by the present invention
It is one, the quantum dot diffusion barrier includes quantum dot substrate layer and is coated on the diffusion layer of substrate layer upper and lower surface, wherein measuring
Son point substrate layer is capable of providing the higher briliancy of backlight module, and diffusion layer can play the role of correcting light diffusion angle, when
When passing through the diffusion particle on diffusion barrier on surface refraction, reflection and the scattering of light can occur for the light of illuminating source, make backlight
The light in source is soft equably to be disseminated out, solves the problems, such as current quantum dot backlight module non-uniform light.The present invention carries
The thinner thickness and tensile strength of the quantum dot diffusion barrier of confession are larger, can meet lightening and curved-surface display requirement, simultaneously
With the performance of preferable briliancy and higher covering, current downward back light diffusing sheet briliancy can be solved and lose big and even light
The general problem of ability.
In order to solve the above-mentioned technical problem, the present invention uses following technical proposals：
The present invention provides a kind of high quantum dot diffusion barrier for covering high briliancy, and the quantum dot diffusion barrier includes quantum dot-based
Material layer and diffusion layer, the diffusion layer are coated on the upper and lower surface of quantum dot substrate layer；The quantum dot substrate layer is single layer
Membrane structure.
The quantum dot substrate layer is single-layer membrane structure, is totally different from commercially available quantum dot film, commercially available quantum dot film
Structure is trilamellar membrane compound system (class " sandwich " structure, the upper and lower surface of quantum dot glue-line are equipped with Obstruct membrane).
The diffusion layer plays even light action, that is, improves the performance for covering lamp shadow.
Further, the thickness of the quantum dot substrate layer is 100-700 μm；The thickness of the diffusion layer is 5-20 μ
m。
Further, the thickness of the quantum dot substrate layer is preferably 400-600 μm；The thickness of the diffusion layer is preferred
It is 15-20 μm.
Further, the thickness of the quantum dot substrate layer is most preferably 400 μm；The thickness of the diffusion layer is most preferably
It is 20 μm.
Further, the quantum dot substrate layer squeezes out the coating of (slot die) automatic coating machine by slit coventry type die head coventry
It forms.
The coating process is to obtain the quantum of " sandwich " structure by the way that two release films and quantum dot glue-line are compound
Point film, then semi-finished product quantum dot substrate layer will be obtained after two release film strippings.
Further, the quantum dot substrate layer includes adhesive, quantum dot and inorganic particulate.
The quantum dot is highly resistance water oxygen corrosion type quantum dot.
Further, the inorganic particulate includes aerosil particle and big grain size silicon dioxide granule.
Further, the particle size range of the aerosil particle is 10~20nm, the big grain size silica
The grain size of particle is 2 μm.
Further, the inorganic particulate includes aerosil particle, TiO 2 particles and big grain size titanium dioxide
Silicon particle.
Further, the quantum dot substrate layer includes the adhesive of 100 parts by weight, the quantum dot of 8-14 parts by weight, 1-5
The aerosil particle of parts by weight, the TiO 2 particles of 5-10 parts by weight and the big grain size titanium dioxide of 10-20 parts by weight
Silicon particle.
Further, the adhesive in the quantum dot substrate layer is selected from polyester resin.
The polyester resin is ultraviolet light solidification resinoid.
The viscosity of the adhesive is 3000cps.
Further, the quantum dot and inorganic particulate are uniformly distributed in adhesive.
Further, the quantum dot includes red quantum dot and green quantum dot.
Further, the quantum dot is highly resistance water oxygen corrosion type quantum dot.
The quantum dot is extremely small inorganic nanocrystal.
The red quantum dot sends out feux rouges under blue light excitation, and the green quantum dot sends out green under blue light excitation
Light.
Further, the red quantum dot and the weight ratio of green quantum dot are 2-5：6-9.
Further, the red quantum dot and the weight ratio of green quantum dot are 3-5：7-9.
Further, the red quantum dot and the weight ratio of green quantum dot are 4-5：8-9.
Further, the red quantum dot and the weight ratio of green quantum dot are 5：9.
The red green quantum dot of different proportion can be added according to chromaticity coordinate and briliancy requirement in above-mentioned quantum dot substrate layer.
Further, the grain size of the aerosil particle in the quantum dot substrate layer is 10~20nm.
Further, the grain size of the TiO 2 particles is 0.3 μm, and the grain size of the big grain size silicon dioxide granule is
2μm。
The aerosil is ultra tiny inorganic nano material.
One of effect of the aerosil is to increase the viscosity of glue system, is larger than 4000cps, glue body
Be the increase of viscosity has a good effect to coating process, such as reduces shrinking percentage, improves film surface Painting effect；
The effect of the aerosil second is that as light diffusion particle, improve refraction and the scattered power of light, with
Increase absorption of red, the green quantum dot to light, improves luminous efficiency；
The three of the effect of the aerosil are tensile strength, tear resistance and the promotion wearability of raising diaphragm,
Membrane ruggedness after aerosil improvement improves very much.
The TiO 2 particles are elliposoidal or spherical shape.
The TiO 2 particles are light diffusion particle, can will enter the light in quantum dot substrate layer and carry out repeatedly
Refraction or diffusing scattering so that quantum dot absorbs more light, improves the luminous efficiency and intensity of quantum dot.
Briliancy after the TiO 2 particles are added rises about 10%, and chromaticity coordinates rises at least 0.01, therefore can reduce
The addition of quantum dot saves cost.
The silicon dioxide granule is the spherical shape of rule.
One of the effect of the silica is to improve luminous efficiency as light diffusion particle, saves cost；The dioxy
The effect of SiClx second is that as reinforcing agent, membrane ruggedness can be obviously improved.
Further, the upper and lower surface of the quantum dot substrate layer is coated with diffusion layer.
Further, the diffusion layer includes the acrylic compounds adhesive of 100 parts by weight, the inorganic expansion of 5-20 parts by weight
Organic diffusion particle of shot and 40-80 parts by weight.
Further, the acrylic compounds adhesive is that ultraviolet cured adhesive sticks agent.
Further, the grain size of organic diffusion particle in the diffusion layer is 10-30 μm, the inorganic diffusion particle
Grain size is 0.01-5 μm.
Further, organic diffusion particle in the diffusion layer is PMMA.
The particle size of the PMMA particles is 10-30 μm.
Further, the inorganic diffusion particle is SiO2。
The SiO2The particle size of particle is 0.01-5 μm.
Further, the quantum dot substrate layer includes the adhesive of 100 parts by weight, the red quantum dot of 3-5 parts by weight,
The green quantum dot of 7-9 parts by weight, the aerosil particle of 4 parts by weight, the TiO 2 particles and 15- of 7-9 parts by weight
The big grain size silicon dioxide granule of 20 parts by weight；The diffusion layer includes the acrylic compounds adhesive of 100 parts by weight, 15-20 weights
Measure organic diffusion particle of the inorganic diffusion particle and 60-80 parts by weight of part.Above-mentioned technical proposal includes embodiment 5-10.
Further, the quantum dot substrate layer includes the adhesive of 100 parts by weight, the red quantum dot of 4-5 parts by weight,
The green quantum dot of 8-9 parts by weight, the aerosil particle of 4 parts by weight, the TiO 2 particles of 9 parts by weight and 15 weight
The big grain size silicon dioxide granule of part；The diffusion layer includes the acrylic compounds adhesive of 100 parts by weight, 15-20 parts by weight
Organic diffusion particle of inorganic diffusion particle and 70-80 parts by weight.Above-mentioned technical proposal includes embodiment 8-9.
The present invention also provides a kind of application of the high quantum dot diffusion barrier for covering high briliancy, the quantum dot diffusion barrier applications
In straight-down negative or side entrance back module.
Further, in the preparation process of quantum dot diffusion barrier, the quantum dot substrate layer is first configured to quantum spot printing
Cloth liquid.
Further, in the preparation process of quantum dot diffusion barrier, the diffusion layer is first configured to diffusion coating fluid.
The present invention also provides a kind of method preparing the high quantum dot diffusion barrier for covering high briliancy, the method include with
Lower step：
(1) aerosil particle, TiO 2 particles and big grain size silicon dioxide granule are added high in adhesive
Speed stirring 30min, obtains the pre-dispersed liquid of particle；
(2) the pre-dispersed liquid high speed that red, green quantum dot is added to above-mentioned particle stirs 30min, obtains quantum spot printing
Cloth liquid；
(3) utilize slit coventry type die head coventry squeeze out (slot die) automatic coating machine be coated with, by quantum dot coating solution in from
The layer upper surface of type film is squeezed through slit and is bonded with the layer upper surface of another release film, cures to obtain through ultraviolet photo-curing equipment
The quantum dot composite membrane of trilamellar membrane fitting；
(4) by two release film strippings, rolling device obtains cured quantum dot glue-line, and the glue-line is as quantum dot-based
Material layer；
(5) inorganic diffusion particle, organic diffusion particle and acrylic compounds adhesive are mixed, obtain diffusion layer coating
Liquid；
(6) diffusion layer coating fluid is uniformly coated on to the upper and lower surface of quantum dot substrate layer, is formed after ultraviolet light cures
Diffusion layer；
(7) diaphragm of double spread is put into baking oven and is cured, obtain quantum dot diffusion barrier finished product.
Further, release film and being bonded for quantum dot glue-line are poor in step (4), can easily strip down.
Further, the oven temperature in step (7) is 70 DEG C.
Quantum dot diffusion barrier provided by the invention is made of intermediate quantum dot substrate layer and diffusion layer upper and lower surfaces of,
The inorganic particulate in diffusion particle and quantum dot substrate layer in upper and lower surface diffusion layer plays the role of refracted light, makes the back of the body
The light of light source is soft equably to be disseminated out, can play atomization covering effect well.And intermediate quantum dot substrate layer
It is capable of providing red green light and the performance of enough briliancy of backlight module needs, while the inorganic particulate in quantum dot substrate layer removes
It can be promoted outside membrane ruggedness, additionally it is possible to significantly improve light utilization so that quantum dot absorbs more light, improves quantum dot
Luminous efficiency and increase briliancy.Quantum dot diffusion barrier provided by the invention is that the upper and lower surface directly in quantum dot substrate layer applies
Prepared by the method for cloth diffusion layer, preparation process is simple, easily operated, has a clear superiority than diffuser plate in cost.And quantum dot
Substrate layer is to squeeze out (slot die) automatic coating machine by slit coventry type die head coventry be coated with, and thickness is with high controllability (from micro-
Rice arrives millimeter rank), thickness can be regulated and controled by controlling the size of slit gap.
Quantum dot diffusion barrier provided by the invention has the characteristics that high briliancy height covers, and overcomes traditional diffuser plate and exists
The disadvantage that briliancy loss is big and covering is general.Quantum dot diffusion barrier provided by the invention can be used for substituting existing straight-down negative or side
Enter the diffuser plate in formula backlight.
Description of the drawings
Fig. 1 is the flow diagram that slit coventry type die head coventry squeezes out that (slot die) automatic coating machine prepares quantum dot substrate layer；
Fig. 2 is the structural schematic diagram of quantum dot diffusion barrier provided by the invention；
Fig. 3 is the lamp bead distribution schematic diagram of down straight aphototropism mode set；
Fig. 4 is that lamp bead is lighted and adds the atomizing effect figure after an existing diffuser plate；
Fig. 5 is that lamp bead is lighted and adds the atomizing effect figure after a quantum dot diffusion barrier provided by the invention.
Specific implementation mode
It is clearly and completely described below in conjunction with the technical solution in the embodiment of the present invention, it is clear that described reality
Example is only one of present invention embodiment, instead of all the embodiments.Based on the embodiments of the present invention, this field
All other embodiments that those of ordinary skill is obtained under the premise of not making creative work, belong to the present invention
The range of protection.
As shown in Figure 1, squeezing out the flow that (slot die) automatic coating machine prepares quantum dot substrate layer for slit coventry type die head coventry
Schematic diagram, wherein coating die head 101, the quantum dot glue 102 of coating, release film 103, upper composite roll 104 and lower composite roll
105, ultraviolet light curing apparatus 106, upper wrap-up 107, lower wrap-up 108, quantum dot substrate layer 109, the winding of finished product
Device 110.
As shown in Fig. 2, quantum dot diffusion barrier provided by the invention includes quantum dot substrate layer 201, and diffusion layer 202, quantum
Point substrate layer 201 includes Polyester adhesive 203, red quantum dot 204, green quantum dot 205, big grain size titanium dioxide silicon grain
Son 206, TiO 2 particles 207, aerosil particle 208, diffusion layer 202 include organic diffusion particle 209 and inorganic
Diffusion particle 210.
As shown in figure 3, the lamp source in down straight aphototropism mode set is made of several rows of lamp bead, wherein 301 be LED lamp bead,
It is a kind of point light source of blue light-emitting, needs diffuser plate or diffusion barrier sheet to carry out even light so that point light source becomes uniform area source.
As shown in figure 4, traditional diffuser plate is used to the point light source of atomization lamp bead, point light source 401 is very obvious, entire to carry on the back
The uniformity of optical mode group is inadequate, illustrates that the atomizing effect of diffuser plate is general.
As shown in figure 5, quantum dot diffusion barrier provided by the invention is used to the point light source of atomization lamp bead, entire backlight module
Light it is more uniform.
The preparation method of quantum dot film provided by the invention, the described method comprises the following steps：
(1) stirring of adhesive high speed is added in aerosil particle, TiO 2 particles and silicon dioxide granule
30min obtains the pre-dispersed liquid of particle；
(2) the pre-dispersed liquid high speed that red green quantum dot is added to above-mentioned particle stirs 30min, obtains quantum dot coating
Liquid；
(3) utilize slit coventry type die head coventry squeeze out (slot die) automatic coating machine be coated with, by quantum dot coating solution in from
The layer upper surface of type film is squeezed through slit and is bonded with the layer upper surface of another release film, cures to obtain through ultraviolet photo-curing equipment
The quantum dot composite membrane of trilamellar membrane fitting；
(4) by two release film strippings, rolling device obtains cured quantum dot glue-line, and the glue-line is as quantum dot-based
Material layer, preparation process are as shown in Figure 1；
(5) inorganic diffusion particle, organic diffusion particle and acrylic compounds adhesive are mixed, obtain diffusion layer coating
Liquid；
(6) diffusion layer coating fluid is uniformly coated on to the upper and lower surface of quantum dot substrate layer, is formed after ultraviolet light cures
Diffusion layer；
(7) diaphragm of double spread is put into baking oven and is cured, obtain quantum dot diffusion barrier finished product.
Further, the oven temperature in step (7) is 70 DEG C.
The performance of quantum dot diffusion barrier provided by the invention is tested using following methods：
1, thickness is tested：Thickness is tested with micrometer caliper (micrometer).
2, tensile strength is tested：Adopt international standards ISO 1184-1983 are carried out, and test equipment is the survey of Instron pulling force
Test-run a machine, diaphragm are cut into I pattern sample, test speed 10mm/min.
3, light transmittance (T.T) and mist degree (Haze) test：The diaphragm to be measured for taking A4 sizes is put into light transmittance mist degree tester
(NDH7000) in, itself T.T and Haze value is tested.
4, covering is tested：The quantum dot diffusion barrier of 31.5 cun of sizes is taken to be placed on the 31.5 cun of downward backs lighted
In the lamp bead of optical mode group, covering situation of the observation quantum dot diffusion barrier to lamp bead.
Cover performance evaluating standard be：
It is poor：Lamp bead is slight as it can be seen that there is apparent light and shade region；
Generally：Lamp bead is invisible, but has apparent light and shade region, and area source is uneven；
Preferably：Invisible lamp bead, light and shade region unobvious, area source are relatively uniform；
Very well：Completely invisible lamp bead, no light and shade region, area source are highly uniform.
5, briliancy is tested：The quantum dot diffusion barrier sheet of 31.5 cun of sizes is positioned over to 31.5 cun of backlight module middle,
It is lighted with 24V constant voltages, test structure is two brightness enhancement films and a dual brightness enhancement film, and test equipment is CS-2000 points
Light radiation luminance meter (Konica Minolta Meinengda Holding Co., Ltd), tests its briliancy.
Embodiment 1
The present invention provides a kind of high quantum dot diffusion barrier for covering high briliancy, and the quantum dot diffusion barrier includes quantum dot-based
Material layer and diffusion layer, the diffusion layer are coated on the upper and lower surface of quantum dot substrate layer；The quantum dot substrate layer is single layer
Membrane structure.
The quantum dot substrate layer includes the polyester resin of 100 parts by weight；The red quantum dot of 2 parts by weight；6 parts by weight
Green quantum dot；The aerosil particle of 1 parts by weight, the particle diameter distribution of the aerosil particle is 10~
20nm；The grain size of the TiO 2 particles of 5 parts by weight, the TiO 2 particles is 0.3 μm；The big grain size dioxy of 10 parts by weight
The grain size of SiClx particle, the big grain size silicon dioxide granule is 2 μm；The thickness of the quantum dot substrate layer is 100 μm, described
Quantum dot substrate layer squeezes out (slot die) automatic coating machine by slit coventry type die head coventry and is prepared.
The diffusion layer includes the adhesive of 100 parts by weight, and the adhesive is acrylic compounds adhesive；40 parts by weight
The particle diameter distribution of organic diffusion particle, organic diffusion particle is 10~30 μm, and organic diffusion particle material is PMMA；
The diffusion layer further includes the inorganic diffusion particle of 5 parts by weight, and the particle diameter distribution of the inorganic diffusion particle is 0.1~5 μm, institute
The material for stating inorganic diffusion particle is SiO2；The thickness of the diffusion layer is 5 μm.
Embodiment 2
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 2 parts by weight, the green quantum dot of 6 parts by weight, the aerosil of 1 parts by weight
Particle, the TiO 2 particles of 5 parts by weight, the big grain size silicon dioxide granule of 10 parts by weight, the thickness of the quantum dot substrate layer
Degree is 300 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 40 parts by weight, 10 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 5 μm.
Embodiment 3
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 2 parts by weight, the green quantum dot of 6 parts by weight, the aerosil of 3 parts by weight
Particle, the TiO 2 particles of 5 parts by weight, the big grain size silicon dioxide granule of 10 parts by weight, the thickness of the quantum dot substrate layer
Degree is 300 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 50 parts by weight, 10 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 10 μm.
Embodiment 4
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 2 parts by weight, the green quantum dot of 6 parts by weight, the aerosil of 3 parts by weight
Particle, the TiO 2 particles of 7 parts by weight, the big grain size silicon dioxide granule of 15 parts by weight, the thickness of the quantum dot substrate layer
Degree is 300 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 50 parts by weight, 15 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 10 μm.
Embodiment 5
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 3 parts by weight, the green quantum dot of 7 parts by weight, the aerosil of 4 parts by weight
Particle, the TiO 2 particles of 7 parts by weight, the big grain size silicon dioxide granule of 15 parts by weight, the thickness of the quantum dot substrate layer
Degree is 400 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 60 parts by weight, 15 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 15 μm.
Embodiment 6
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 3 parts by weight, the green quantum dot of 7 parts by weight, the aerosil of 4 parts by weight
Particle, the TiO 2 particles of 9 parts by weight, the big grain size silicon dioxide granule of 15 parts by weight, the thickness of the quantum dot substrate layer
Degree is 400 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 60 parts by weight, 20 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 15 μm.
Embodiment 7
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 3 parts by weight, the green quantum dot of 7 parts by weight, the aerosil of 4 parts by weight
Particle, the TiO 2 particles of 9 parts by weight, the big grain size silicon dioxide granule of 20 parts by weight, the thickness of the quantum dot substrate layer
Degree is 400 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 70 parts by weight, 15 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 20 μm.
Embodiment 8
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 4 parts by weight, the green quantum dot of 8 parts by weight, the aerosil of 4 parts by weight
Particle, the TiO 2 particles of 9 parts by weight, the big grain size silicon dioxide granule of 15 parts by weight, the thickness of the quantum dot substrate layer
Degree is 400 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 70 parts by weight, 20 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 20 μm.
Embodiment 9
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 5 parts by weight, the green quantum dot of 9 parts by weight, the aerosil of 4 parts by weight
Particle, the TiO 2 particles of 9 parts by weight, the big grain size silicon dioxide granule of 15 parts by weight, the thickness of the quantum dot substrate layer
Degree is 400 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 80 parts by weight, 15 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 20 μm.
Embodiment 10
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 3 parts by weight, the green quantum dot of 7 parts by weight, the aerosil of 4 parts by weight
Particle, the TiO 2 particles of 9 parts by weight, the big grain size silicon dioxide granule of 20 parts by weight, the thickness of the quantum dot substrate layer
Degree is 600 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 70 parts by weight, 15 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 15 μm.
Embodiment 11
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 3 parts by weight, the green quantum dot of 7 parts by weight, the aerosil of 4 parts by weight
Particle, the TiO 2 particles of 9 parts by weight, the big grain size silicon dioxide granule of 20 parts by weight, the thickness of the quantum dot substrate layer
Degree is 700 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 70 parts by weight, 20 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 15 μm.
Embodiment 12
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 3 parts by weight, the green quantum dot of 7 parts by weight, the aerosil of 5 parts by weight
Particle, the TiO 2 particles of 10 parts by weight, the big grain size silicon dioxide granule of 20 parts by weight, the thickness of the quantum dot substrate layer
Degree is 700 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 80 parts by weight, 20 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 20 μm.
Comparative example 1
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 0 parts by weight, the green quantum dot of 0 parts by weight, the aerosil of 4 parts by weight
Particle, the TiO 2 particles of 9 parts by weight, the big grain size silicon dioxide granule of 15 parts by weight, the thickness of the quantum dot substrate layer
Degree is 400 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 70 parts by weight, 15 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 20 μm.
Red green quantum dot is free of in manufactured film, briliancy is relatively low, and cannot provide the red green light of backlight needs.
Comparative example 2
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 3 parts by weight, the green quantum dot of 7 parts by weight, the aerosil of 0 parts by weight
Particle, the TiO 2 particles of 9 parts by weight, the big grain size silicon dioxide granule of 15 parts by weight, the thickness of the quantum dot substrate layer
Degree is 400 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 70 parts by weight, 15 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 20 μm.
Without aerosil particle in manufactured quantum dot diffusion barrier, the tensile strength of diaphragm is relatively low.
Comparative example 3
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 3 parts by weight, the green quantum dot of 7 parts by weight, the aerosil of 4 parts by weight
Particle, the TiO 2 particles of 0 parts by weight, the big grain size silicon dioxide granule of 15 parts by weight, the thickness of the quantum dot substrate layer
Degree is 400 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 70 parts by weight, 15 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 20 μm.
Without TiO 2 particles in manufactured quantum dot diffusion barrier, quantum dot light emitting efficiency becomes after losing light diffusion particle
It is low, therefore briliancy declines.
Comparative example 4
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 3 parts by weight, the green quantum dot of 7 parts by weight, the aerosil of 4 parts by weight
Particle, the TiO 2 particles of 9 parts by weight, the big grain size silicon dioxide granule of 0 parts by weight, the thickness of the quantum dot substrate layer
It is 400 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 70 parts by weight, 15 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 20 μm.
Decline without silicon dioxide granule, the tensile strength and briliancy of diaphragm in manufactured quantum dot diffusion barrier.
Comparative example 5
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 3 parts by weight, the green quantum dot of 7 parts by weight, the aerosil of 4 parts by weight
Particle, the TiO 2 particles of 9 parts by weight, the big grain size silicon dioxide granule of 15 parts by weight, the thickness of the quantum dot substrate layer
Degree is 400 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 0 parts by weight, 15 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 20 μm.
It is deteriorated without organic diffusion particle, the mist degree and covering of diaphragm in manufactured diffusion layer.
Comparative example 6
If the height of the offer of embodiment 1 covers the quantum dot diffusion barrier of high briliancy, the quantum dot substrate layer includes 100 weight
The polyester resin of part, the red quantum dot of 3 parts by weight, the green quantum dot of 7 parts by weight, the aerosil of 4 parts by weight
Particle, the TiO 2 particles of 9 parts by weight, the big grain size silicon dioxide granule of 15 parts by weight, the thickness of the quantum dot substrate layer
Degree is 400 μm.
The diffusion layer includes the adhesive of 100 parts by weight, organic diffusion particle of 70 parts by weight, 0 parts by weight it is inorganic
The thickness of diffusion particle, the diffusion layer is 20 μm.
Without diffusion particle SiO in manufactured diffusion layer2, the mist degree and covering of diaphragm are deteriorated.
The performance test results for the quantum dot diffusion barrier that 1 embodiment 1-12 of table and comparative example 1-6 are provided
| Embodiment | Briliancy (cd/m2) | T.T/% | Haze/% | Covering | Tensile strength/Mpa |
| Embodiment 1 | 2201 | 91 | 89 | Generally | 25 |
| Embodiment 2 | 2400 | 89 | 92 | Generally | 31 |
| Embodiment 3 | 2450 | 88 | 93 | Generally | 35 |
| Embodiment 4 | 2580 | 86 | 94 | Preferably | 38 |
| Embodiment 5 | 2705 | 84 | 97 | Preferably | 45 |
| Embodiment 6 | 2765 | 83 | 97 | Preferably | 46 |
| Embodiment 7 | 2800 | 83 | 98 | Very well | 51 |
| Embodiment 8 | 2950 | 82 | 99 | Very well | 50 |
| Embodiment 9 | 3100 | 81 | 100 | Very well | 52 |
| Embodiment 10 | 2750 | 76 | 99 | Preferably | 57 |
| Embodiment 11 | 2800 | 70 | 100 | Preferably | 60 |
| Embodiment 12 | 2850 | 67 | 100 | Very well | 62 |
| Comparative example 1 | 615 | 84 | 96 | Preferably | 45 |
| Comparative example 2 | 2500 | 83 | 96 | Preferably | 23 |
| Comparative example 3 | 2300 | 85 | 95 | Preferably | 44 |
| Comparative example 4 | 2350 | 88 | 93 | Preferably | 26 |
| Comparative example 5 | 2800 | 90 | 90 | It is poor | 45 |
| Comparative example 6 | 2795 | 89 | 92 | Generally | 44 |
The test result of the embodiment 1-12 and comparative example 1-6 shown in the table 1 can be seen that quantum dot provided by the invention
Diffusion barrier have higher briliancy performance and higher covering, by quantum dot substrate layer quantum dot and various optics
Diffusion particle, which carries out ratio optimization, can improve the briliancy and tensile strength of diaphragm, while the expansion of quantum dot substrate layer upper and lower surface
Scattered layer plays the role of improving covering.
Wherein, comparative example 1 of the invention can illustrate that quantum dot is very big for the briliancy contribution rate for promoting backlight module.It is right
Ratio 2 illustrates that aerosil can significantly improve the tensile strength of diaphragm, and is conducive to promote briliancy.Comparative example 3 is said
Bright TiO 2 particles are larger to the contribution margin of briliancy.Comparative example 4 illustrates stretching of the silicon dioxide granule in addition to that can promote diaphragm
Certain briliancy contribution can also be provided outside intensity.Comparative example 5 and comparative example 6 illustrate organic diffusion particle PMMA and inorganic diffusion grain
Sub- SiO2Covering to improving whole diaphragm has obviously effect.
Optimized in technical solution provided by the invention in quantum dot substrate layer and diffusion layer the type of light diffusion particle and
Additive amount range, to prepare the quantum dot diffusion barrier for having both high briliancy performance and preferable covering.Wherein, reality of the invention
It applies quantum dot diffusion barrier prepared by 5-10 and is having both higher briliancy simultaneously, also there is higher covering and tensile strength,
The light transmittance of the quantum dot diffusion barrier of preparation, which is at least 76%, mist degree and is at least 97%, briliancy, is at least 2705cd/m2, cover
Property grading be preferable or more, and the tensile strength of diaphragm is all higher than 45Mpa.Particularly, prepared by embodiment 8 and embodiment 9
Quantum dot diffusion barrier comprehensive performance it is best, light transmittance, which is at least 81%, mist degree and is at least 99%, tensile strength, to be at least
50Mpa, briliancy are at least 2950cd/m2, covering grading be fine.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the scope of the present invention.It is every
The equivalent changes and modifications done according to the content of present invention are encompassed by the scope of the claims of the present invention.
Claims (10)
1. a kind of high quantum dot diffusion barrier for covering high briliancy, which is characterized in that the quantum dot diffusion barrier includes quantum dot-based
Material layer and diffusion layer, the diffusion layer are coated on the upper and lower surface of quantum dot substrate layer；The quantum dot substrate layer is single layer
Membrane structure.
2. the high quantum dot diffusion barrier for covering high briliancy according to claim 1, which is characterized in that the quantum dot base material
Layer includes adhesive, quantum dot and inorganic particulate.
3. the high quantum dot diffusion barrier for covering high briliancy according to claim 1, which is characterized in that the quantum dot base material
Layer includes the adhesive of 100 parts by weight, the quantum dot of 8-14 parts by weight, the aerosil particle of 1-5 parts by weight, 5-10 weights
Measure the big grain size silicon dioxide granule of the TiO 2 particles and 10-20 parts by weight of part.
4. the high quantum dot diffusion barrier for covering high briliancy according to claim 2, which is characterized in that the quantum dot includes
Red quantum dot and green quantum dot.
5. the high quantum dot diffusion barrier for covering high briliancy according to claim 4, which is characterized in that the red quantum dot
Weight ratio with green quantum dot is 2-5：6-9.
6. the high quantum dot diffusion barrier for covering high briliancy according to claim 3, which is characterized in that the quantum dot base material
The grain size of aerosil particle in layer is 10~20nm.
7. the high quantum dot diffusion barrier for covering high briliancy according to claim 1, which is characterized in that the diffusion layer packet
Include the acrylic compounds adhesive of 100 parts by weight, the inorganic diffusion particle of 5-20 parts by weight and organic diffusion grain of 40-80 parts by weight
Son.
8. the high quantum dot diffusion barrier for covering high briliancy according to claim 7, which is characterized in that in the diffusion layer
The grain size of organic diffusion particle is 10-30 μm, and the grain size of the inorganic diffusion particle is 0.01-5 μm.
9. a kind of height according to any one of claim 1-8 covers the application of the quantum dot diffusion barrier of high briliancy, special
Sign is that the quantum dot diffusion barrier is applied in straight-down negative or side entrance back module.
10. a kind of method that height prepared described in any one of claim 1-8 covers the quantum dot diffusion barrier of high briliancy, special
Sign is that the method includes the following steps：
(1) aerosil particle, TiO 2 particles and big grain size silicon dioxide granule addition adhesive high speed are stirred
30min is mixed, the pre-dispersed liquid of particle is obtained；
(2) the pre-dispersed liquid high speed that red, green quantum dot is added to above-mentioned particle stirs 30min, obtains quantum dot coating fluid；
(3) it utilizes slit coventry type die head coventry to squeeze out (slot die) automatic coating machine to be coated with, by quantum dot coating solution in release film
Layer upper surface, squeeze through slit and be bonded with the layer upper surface of another release film, cure to obtain three layers through ultraviolet photo-curing equipment
The quantum dot composite membrane of film fitting；
(4) by two release film strippings, rolling device obtains cured quantum dot glue-line, which is quantum dot base material
Layer；
(5) inorganic diffusion particle, organic diffusion particle and acrylic compounds adhesive are mixed, obtain diffusion layer coating fluid；
(6) diffusion layer coating fluid is uniformly coated on to the upper and lower surface of quantum dot substrate layer, forms diffusion after ultraviolet light cures
Layer；
(7) diaphragm of double spread is put into baking oven and is cured, obtain quantum dot diffusion barrier finished product.
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