CN108387327B - Temperature measurement method and system in strong ionizing radiation environment - Google Patents
Temperature measurement method and system in strong ionizing radiation environment Download PDFInfo
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- CN108387327B CN108387327B CN201810442429.4A CN201810442429A CN108387327B CN 108387327 B CN108387327 B CN 108387327B CN 201810442429 A CN201810442429 A CN 201810442429A CN 108387327 B CN108387327 B CN 108387327B
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- 238000009529 body temperature measurement Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000005865 ionizing radiation Effects 0.000 title claims abstract description 19
- 239000013078 crystal Substances 0.000 claims abstract description 88
- 238000005259 measurement Methods 0.000 claims description 15
- 230000005469 synchrotron radiation Effects 0.000 claims description 4
- 230000009977 dual effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/006—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of the effect of a material on microwaves or longer electromagnetic waves, e.g. measuring temperature via microwaves emitted by the object
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Abstract
The invention discloses a temperature measurement method and a temperature measurement system in a strong ionizing radiation environment. According to the method, the temperature change of the crystal to be detected is obtained through calculation according to the change of the lattice length of the crystal to be detected; specifically, a wavelength selector is selected or prepared, the wavelength selector only allows a light beam with a certain wavelength lambda to pass through, and a light beam is incident on the surface of the crystal to be detected, and the wavelength selector is used for receiving a diffraction light beam with the wavelength lambda generated by the incident light beam through the surface of the crystal to be detected and recording the intensity I of the diffraction light beam; when the I value changes, changing the incident angle between the crystal to be detected and the incident beam, and when the intensity of the received diffraction beam is I, recording the angle change quantity as delta theta; and then obtaining the temperature change according to the relation between delta theta and the temperature value change of the crystal to be detected. The invention solves the temperature measurement problem in the strong ionizing radiation environment, and accurately measures the temperature value of the crystal surface in the strong ionizing radiation environment.
Description
Technical Field
The invention relates to a temperature measuring method and a system, in particular to a method and a system for measuring the surface temperature of a crystal in a strong ionizing radiation environment.
Technical Field
The temperature is a physical quantity used for describing the cold and hot degree of an object macroscopically, is a representation of the average kinetic energy of microscopic atoms/molecules, and is one of 7 basic physical quantities in the international unit system. In nature, many physical properties and physical effects of substances are related to temperature; measuring/controlling the temperature of an object is also an important technique in engineering. Therefore, accurate measurement of temperature is critical to both physical and chemical scientific research and thermal engineering of boilers and the like. Also, these temperature-related phenomena and laws can be utilized as a means of measuring temperature.
The measurement of temperature is classified according to whether it is in direct contact with the object to be measured, and is classified into two types, contact type and non-contact type. The contact temperature measurement method is characterized in that the contact temperature measurement method directly contacts with a measured object through a temperature measuring element, and when the contact temperature measurement method and the measured object reach heat balance after the contact temperature measurement element and the measured object are fully subjected to heat exchange, the value of a certain physical parameter of the temperature sensing element is regarded as the temperature value of the measured object. Since sufficient heat exchange is required to be completed, the temperature value is the body temperature value of the measured object. The method has the advantages of intuitiveness and reliability, and has the defects that the temperature sensing element affects the distribution of the measured temperature field, poor contact and the like, so that measurement errors are brought, the method is greatly limited by environment, and the performance and the service life of the temperature sensing element are adversely affected by too high temperature and corrosive media. It is mainly represented by a resistance thermometer, a thermoelectric thermometer, and the like. The non-contact temperature measurement method mainly measures the heat radiation quantity of a measured object, so that many defects of the contact temperature measurement method can be avoided, and almost no upper temperature measurement limit exists. The temperature of the moving object and the rapidly changing temperature can be measured. However, the method is generally large in temperature measurement error due to the influence of the emissivity of an object, the distance between a measured object and a meter, smoke dust, water vapor and other mediums. Mainly represented by radiation thermometers, colorimetric thermometers, and the like.
In a strong ionizing radiation environment, the contact sensor is affected by the strong ionizing radiation, which generates a current (voltage) inside it, and the working function of the sensor is not only quite complex, but may be related to the intensity of the ionizing radiation. Therefore, the temperature sensor will not work properly. The non-contact temperature measuring method such as infrared temperature measurement is not good as a temperature measuring means for the crystal surface in the strong ionizing radiation environment because the monocrystalline silicon crystal is transparent to the wavelength or has the possibility of reflecting the radiation of surrounding objects.
The effect of the heat removal technology can be known by accurately measuring the temperature of the monochromator under the synchronous radiation environment, and meanwhile, the deformation of the monochromator crystal can be controlled manually by regulating and controlling the temperature.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide a temperature measurement method and a system under the strong ionizing radiation environment.
The main technical content of the invention comprises:
1. the change of the crystal lattice length is utilized to reflect the temperature change of the measured object or the crystal;
2. and locking the detection wavelength by using an integrated double tunnel cutting crystal monochromator (MDCM) to realize the correspondence of the angle measurement and the temperature.
The technical scheme of the invention is as follows:
a temperature measurement method under the strong ionizing radiation environment is characterized in that the temperature change delta t of a crystal to be measured is calculated according to the change delta d of the lattice length d of the crystal to be measured.
Further, the method for measuring the change delta d of the lattice length d of the crystal to be measured is to convert the measurement of the change delta theta of the crystal to be measured into the measurement of the angle change delta theta of the crystal to be measured, and the temperature change delta t of the crystal to be measured is obtained through calculation according to the delta theta, and comprises the following steps: selecting or preparing a wavelength selector (namely MDCM), and then preliminarily adjusting the angle of the crystal to be detected, so that the central wavelength lambda of the outgoing beam after the incident beam is diffracted by the crystal to be detected is exactly the wavelength which only allows the MDCM to pass through; then the wavelength selector is placed at a matching position for receiving a diffraction beam with the center wavelength lambda generated by an incident beam passing through the surface of the crystal to be detected, and recording the intensity I of the diffraction beam received at the moment; when the intensity I value of the diffracted beam changes, the incident angle between the crystal to be detected and the incident beam is changed, and when the intensity of the received diffracted beam is I, the change amount of the recording angle is delta theta; and then obtaining the temperature change delta t according to the relation between delta theta and the temperature value change of the crystal to be detected.
Further, according to the formulaCalculating a temperature change deltat; where α is the thermal expansion coefficient of the crystal to be measured, 2dsinθ=λ.
Further, the wavelength selector is an integrated dual tunnel cut crystal monochromator.
Further, the wavelength selector comprises two groups of reflecting surfaces, and the first group of reflecting surfaces are two reflecting surfaces of a high-index (generally more than 5) tunnel cutting crystal; the second group of reflecting surfaces are two reflecting surfaces of the tunnel cutting crystal, and the diffraction index of the two reflecting surfaces is equivalent to that of the first group of reflecting surfaces; the second set of reflective surfaces is at the same bragg angle as the first set of reflective surfaces; the diffracted light beams are sequentially output through the first group of reflecting surfaces and the second group of reflecting surfaces.
The temperature measurement system in the strong ionizing radiation environment is characterized by comprising a light source, a wavelength selector, a detector and a mechanical control measurement device; wherein the wavelength selector only allows the output of a diffracted light beam with a center wavelength lambda generated by the surface of the crystal to be measured;
the light source is used for generating an incident light beam incident on the surface of the crystal to be detected;
the mechanical control measuring device is respectively connected with the wavelength selector and the crystal to be measured and is used for adjusting the position of the wavelength selector to enable the wavelength selector to receive the incident light beam which is generated by the surface of the crystal to be measured and has the center wavelength lambda; and changing the incident angle between the crystal to be measured and the incident beam;
the detector is used for measuring the intensity of the light beam input by the wavelength selector.
Further, the wavelength selector is an integrated dual tunnel cut crystal monochromator.
Furthermore, the crystal to be detected is a monochromator.
Further, the light source is a synchrotron radiation light source.
The invention utilizes the thermal expansion phenomenon of the crystal lattice, and reflects the change of temperature by measuring the change of the crystal lattice length d.
The specific method is characterized in that the Bragg formula 2dsin theta=lambda is utilized, the wavelength lambda is locked by using an integrated double-tunnel cut crystal (figure 1), the one-to-one correspondence between the Bragg angle theta and the lattice length d value is established, and the one-to-one correspondence between the Bragg angle theta and the temperature value on the crystal is further realized.
Further, the lattice length d is the value of the interplanar spacing d of the crystal orientation of the measured crystal surface, as described by the effect of kinetic diffraction.
Compared with the prior art, the invention has the following positive effects:
1. the invention solves the problem that the traditional contact temperature probe cannot work normally in the strong ionizing radiation environment by utilizing a non-contact indirect temperature measurement mode.
2. The temperature value is reflected by the lattice length of the crystal, so that the temperature of the surface of the crystal can be accurately obtained. Solves the bottleneck problem that the prior temperature probe can not obtain the temperature value of the crystal surface.
In a word, the invention solves the temperature measurement problem under the strong ionizing radiation environment, and simultaneously accurately measures the temperature value of the crystal surface under the strong ionizing radiation environment.
Drawings
Fig. 1 is a schematic diagram of the MDCM structure.
Fig. 2 is a diagram showing a temperature measurement experiment configuration.
Fig. 3 is an example experimental configuration diagram.
The device comprises a 1-beam line, a 2-tunnel cutting crystal surface with a crystal face index of (10 0) 2, a 3-tunnel cutting crystal surface with a crystal face index of (10 2) 0, 4-white light, a 5-slit, a 6-temperature-to-be-detected crystal, 7-MDCM, an 8-detector, a 9-mechanical control/measurement device, 10-synchrotron radiation light and an 11-Si111 monochromator.
Detailed Description
The invention is described in further detail below in connection with the following detailed description of the embodiments and the accompanying drawings.
The MDCM is composed of a pair of single crystal silicon tunnel cuts with high index facets, such as diffraction facet indices (10 0 2) and (10 2 0), (9 1) and (9 1-1), (7 7 5) and (7 5 7), and the like. A high diffraction index has a positive effect on improving the resolution of the monochromator. Taking MDCM as an example of FIGS. 1 (10 0 2) and (10 2 0), the index of crystal face 2 is (10 0 2), and the index of crystal face 3 is (10 2 0). The wavelength of white light after MDCM isBandwidth of 7×10 -6 . Thus, the fixation of the wavelength can be realized. The design of the MDCM is such that light of an acceptable wavelength is just incident horizontally and exits horizontally when the MDCM is placed horizontally. The diffraction index surface is different, and the locked wavelength value is different.
An experimental system is built according to an experimental configuration diagram of fig. 2. Firstly, the crystal to be measured temperature and the MDCM are adjusted to be in the best match by a mechanical control measuring deviceThe position is that the center wavelength of the white light after the diffraction of the crystal to be measured is just the wavelength acceptable by the MDCM. For the MDCM with diffraction index surfaces (10 0 2) and (10 2 0), the central wavelength of the emergent light of the crystal to be measured is adjusted to beIn this case the detector can only accept wavelengths of +.>Is a signal of (a).
From the chemical relationship Δd/d=αΔt between temperature and lattice length change, α is the thermal expansion coefficient, and it is understood that the measurement of temperature can be converted into the measurement of lattice length change. When the temperature of the surface of the to-be-measured temperature crystal changes, the lattice length of the to-be-measured temperature crystal changes, and according to the Bragg formula 2dsin theta = lambda, under the condition that the detectable wavelength is fixed, the change of the lattice length d means that the angle of the to-be-measured temperature crystal must be changed to continuously receive the signal. Therefore, the measurement of temperature is converted into the measurement of the angle of the crystal to be measured.
From Bragg formula there is Δd/d=Δθ/tan θ, and therefore
The invention provides a new temperature measuring method, in particular to a measuring method of the surface temperature of crystals under the environment of strong ionizing radiation. The temperature measurement is achieved by measuring the angle. Further, if the detector is a two-dimensional detector, the temperature distribution on the crystal surface can be obtained from the intensity distribution on the two-dimensional detector.
Example 1
The temperature at the monochromator in the synchrotron radiation environment was measured using the method described above. And (3) constructing an experimental system according to an experimental configuration diagram shown in fig. 3, keeping the MDCM in a horizontal position, and adjusting the monochromator to be in a position matched with the MDCM. The intensity of the detector at this time is recorded. When the temperature changes, the MDCM is kept still, the monochromator is rotated to enable the intensity of the detector after the MDCM to be consistent with that of the detector before, and the temperature change of the monochromator in the synchrotron radiation environment can be obtained by using the formula (1).
In summary, the above embodiments are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A temperature measurement method in strong ionizing radiation environment is characterized in that the measurement of the change Deltad of the lattice length d of a crystal to be measured is converted into the measurement of the angle change Deltatheta of the crystal to be measured, and the method is based on a formulaThe temperature change Deltat is calculated by the following steps: selecting or preparing a wavelength selector, and then preliminarily adjusting the crystal to be detected, so that the central wavelength lambda of the outgoing light beam after the incident light beam is diffracted by the crystal to be detected is just the wavelength which is allowed to pass through by the wavelength selector; then, a beam of light is incident on the surface of the crystal to be detected, the wavelength selector is placed at a matching position and used for receiving a diffraction light beam with the central wavelength lambda generated by the incident light beam through the surface of the crystal to be detected, and the intensity I of the diffraction light beam received at the moment is recorded; when the intensity I value of the diffracted beam changes, the incident angle between the crystal to be detected and the incident beam is changed, and when the intensity of the received diffracted beam is I, the change amount of the recording angle is delta theta; then obtaining a temperature change Deltat according to the relation between Deltaθ and the temperature value change of the crystal to be detected; wherein α is the thermal expansion coefficient of the crystal to be measured, and θ is calculated according to the formula 2dsinθ=λ.
2. The method of claim 1, wherein the wavelength selector is a one-piece double tunnel cut crystal monochromator.
3. A method as claimed in claim 1 or claim 2 wherein the wavelength selector comprises two sets of reflective surfaces, the first set of reflective surfaces being a high index tunnel cut crystal; the second group of reflecting surfaces are tunnel cutting crystals equivalent to the diffraction indexes of the first group of reflecting surfaces; the second set of reflective surfaces is at the same bragg angle as the first set of reflective surfaces; the diffracted light beams are sequentially output through the first group of reflecting surfaces and the second group of reflecting surfaces.
4. The temperature measurement system in the strong ionizing radiation environment is characterized by comprising a light source, a wavelength selector, a detector and a mechanical control measurement device; wherein the wavelength selector only allows the output of a diffracted light beam with a center wavelength lambda generated by the surface of the crystal to be measured;
the light source is used for generating an incident light beam incident on the surface of the crystal to be detected;
the mechanical control measuring device is respectively connected with the wavelength selector and the crystal to be measured and is used for adjusting the position of the wavelength selector to enable the wavelength selector to receive the incident light beam which is generated by the surface of the crystal to be measured and has the center wavelength lambda; and changing the incident angle between the crystal to be measured and the incident beam;
the detector is used for measuring the intensity of the light beam input by the wavelength selector;
the temperature measurement system is according to the formulaCalculating to obtain the temperature change delta t; the method for obtaining the temperature change Deltat comprises the following steps: a beam of light is incident on the surface of the crystal to be detected, the wavelength selector is placed at a matching position and used for receiving a diffraction light beam with the center wavelength lambda generated by the incident light beam through the surface of the crystal to be detected, and the intensity I of the diffraction light beam received at the moment is recorded; when the intensity I value of the diffracted beam changes, the incident angle between the crystal to be detected and the incident beam is changed, and when the intensity of the received diffracted beam is I, the change amount of the recording angle is delta theta; then obtaining a temperature change Deltat according to the relation between Deltaθ and the temperature value change of the crystal to be detected; alpha is the thermal expansion coefficient of the crystal to be measured, and theta is calculated according to the formula 2dsinθ=λ.
5. The temperature measurement system of claim 4 wherein the wavelength selector is a one-piece dual tunnel cut crystal monochromator.
6. The temperature measurement system of claim 4 wherein the crystal to be measured is a monochromator.
7. The temperature measurement system of claim 4 wherein the light source is a synchrotron radiation light source.
8. The temperature measurement system of claim 4 wherein the wavelength selector comprises two sets of reflective surfaces, the first set of reflective surfaces being two reflective surfaces of a high index tunnel cut crystal; the second group of reflecting surfaces are two reflecting surfaces of the tunnel cutting crystal, and the diffraction index of the two reflecting surfaces is equivalent to that of the first group of reflecting surfaces; the second set of reflective surfaces is at the same bragg angle as the first set of reflective surfaces; the diffracted light beams are sequentially output through the first group of reflecting surfaces and the second group of reflecting surfaces.
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| CN103048063A (en) * | 2011-12-13 | 2013-04-17 | 纳米及先进材料研发院有限公司 | Time and temperature indicator based on chromatography and photonic lattice change |
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2018
- 2018-05-10 CN CN201810442429.4A patent/CN108387327B/en active Active
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| JPH02212726A (en) * | 1989-02-14 | 1990-08-23 | Nippon Telegr & Teleph Corp <Ntt> | Measurement of substrate temperature and crystal growth method and apparatus for semiconductor thin film utilizing the same |
| JPH06102095A (en) * | 1992-09-17 | 1994-04-12 | Toshiba Corp | Laser measuring device |
| US5636258A (en) * | 1995-10-24 | 1997-06-03 | Siemens Aktiengesellschaft | In-situ temperature measurement using X-ray diffraction |
| CN101598606A (en) * | 2009-07-22 | 2009-12-09 | 中国航空工业集团公司沈阳发动机设计研究所 | A kind of carborundum crystals with neutron irradiation is the temp measuring method of sensor |
| CN103048063A (en) * | 2011-12-13 | 2013-04-17 | 纳米及先进材料研发院有限公司 | Time and temperature indicator based on chromatography and photonic lattice change |
| CN103134779A (en) * | 2013-01-31 | 2013-06-05 | 中国科学院上海技术物理研究所 | Spectroscopic method and device for quickly testing type II infrared superlattice interface quality |
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