CN108376250A - A kind of fingerprint recognition device and preparation method thereof, touch panel - Google Patents
A kind of fingerprint recognition device and preparation method thereof, touch panel Download PDFInfo
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- CN108376250A CN108376250A CN201810159105.XA CN201810159105A CN108376250A CN 108376250 A CN108376250 A CN 108376250A CN 201810159105 A CN201810159105 A CN 201810159105A CN 108376250 A CN108376250 A CN 108376250A
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- underlay substrate
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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Abstract
A kind of fingerprint recognition device of present invention offer and preparation method thereof,Touch panel,The fingerprint recognition device includes the first photosensitive unit,Second photosensitive unit and first film transistor,First film transistor is used to export the photo-signal of the first photosensitive unit,The optical signal of the valley and a ridge of finger can be converted to current signal by the first photosensitive unit,Second photosensitive unit is connected with the grid of first film transistor,The light signal strength of the valley and a ridge reflection of finger is different when due to touch-control,Second photosensitive unit can generate the photovoltage of varying strength,The photovoltage is loaded on the grid of first film transistor,Thus the channel state of first film transistor is controlled,Amplify the ratio of the photoelectric current of the valley and a ridge of finger,That is the difference of the photoelectric current of the valley and a ridge of amplification finger,To improve accuracy of detection and the sensitivity of fingerprint recognition device.
Description
Technical field
The present invention relates to display technology fields, and in particular to a kind of fingerprint recognition device and preparation method thereof, touch panel.
Background technology
Fingerprint identification technology has many advantages, such as that precision is high, speed is fast, price is low, user's acceptance is high, therefore the field is opened
Since wound, the abundant attention of academia is just obtained, the colleges and universities and scientific research institution of lot of domestic and international are added to research neck one after another
In domain, and achieve a series of achievement.
Existing fingerprint recognition device includes into the fingerprint identification unit of matrix arrangement, and each fingerprint identification unit includes one
A thin film transistor (TFT) and a photodiode, photodiode are connected in series with the thin film transistor (TFT), utilize modulation light pair
Fingerprint recognition device is irradiated, and then carries out all-wave phase demodulation, and the small-signal of the valley and a ridge of finger is extensive from noise
It appears again and, wherein thin film transistor (TFT) determines position of touch by progressive scan.However, due to noisy presence, the paddy of finger
It is fainter with the signal of ridge, cause existing fingerprint recognition device accuracy of detection and sensitivity relatively low.
Invention content
The present invention aiming at the above shortcomings existing in the prior art, provide a kind of fingerprint recognition device and preparation method thereof,
Touch panel is low to the accuracy of detection and sensitivity that at least partly solve the problems, such as existing fingerprint recognition device.
The present invention is in order to solve the above technical problems, adopt the following technical scheme that：
The present invention provides a kind of fingerprint recognition device, is applied to touch panel, and the fingerprint recognition device includes：It is formed in
First photosensitive unit on underlay substrate, for the optical signal of the valley and a ridge reflection of finger to be converted to photo-signal,
It is characterized in that, further includes the second photosensitive unit and the first film transistor that is formed on the underlay substrate, described first is thin
Film transistor is used to export the photo-signal of first photosensitive unit；Second photosensitive unit is brilliant with the first film
The grid of body pipe is connected, and the optical signal for being reflected according to the valley and a ridge of finger generates photovoltage, and the photovoltage is conveyed
To the grid of the first film transistor, to amplify the ratio of the photo-signal for the valley and a ridge that first photosensitive unit generates
Value.
Further, the fingerprint device further includes the second thin film transistor (TFT) being formed on the underlay substrate；Institute
It states the first photosensitive unit and the side of the underlay substrate is provided with first electrode；
The source electrode of the first film transistor is connected with the first electrode of first photosensitive unit, the first film
The drain electrode of transistor is connected with the drain electrode of second thin film transistor (TFT).
Preferably, the first film transistor and/or second thin film transistor (TFT) are top gate type thin film transistor；Institute
The second photosensitive unit is stated to be arranged in side of the first film transistor far from the underlay substrate.
Preferably, first photosensitive unit and/or second photosensitive unit are photodiode, include at least stacking
The p type semiconductor layer and n type semiconductor layer of setting,
The side of first photosensitive unit far from the underlay substrate is provided with the second electricity for loading bias voltage
Pole.
Preferably, second photosensitive unit is in open-circuit condition.
Preferably, the threshold voltage of the first film transistor is -1~0V.
The present invention also provides a kind of touch panel, including multiple foregoing fingerprint recognition devices, each fingerprint is known
Other device is arranged in arrays.
The present invention also provides a kind of preparation method of fingerprint recognition device, the method includes：
Each layer structure of first film transistor is formed in the first position of underlay substrate；
Each layer structure of the first photosensitive unit is formed in the second position for completing the underlay substrate of above-mentioned steps, and described
Each layer structure of the second photosensitive unit is formed in first film transistor；Wherein, the first film transistor is for exporting institute
State the photo-signal of the first photosensitive unit；Second photosensitive unit is connected with the grid of the first film transistor, uses
Photovoltage is generated in the light reflected according to the valley and a ridge of finger, and the photovoltage is delivered to the first film transistor
Grid, to amplify the ratio of the photo-signal for the valley and a ridge that first photosensitive unit generates.
Further, described each of the first photosensitive unit is formed in the second position for completing the underlay substrate of above-mentioned steps
Layer structure, and formed before each layer structure of the second photosensitive unit in the first film transistor, the method further includes：
Each layer structure of the second thin film transistor (TFT) is formed in the third place of the underlay substrate, wherein described second is thin
The drain electrode layer of film transistor is connected with the drain electrode of the first film transistor；
After each layer structure that the first position of underlay substrate forms first film transistor, complete above-mentioned steps
The second position of underlay substrate forms each layer structure of the first photosensitive unit, and forms second in the first film transistor
Before each layer structure of photosensitive unit, shown method further includes：
First electrode is formed in the second position of the underlay substrate, wherein the first electrode and the first film
The source layer of transistor is connected.
Further, described each of the first photosensitive unit is formed in the second position for completing the underlay substrate of above-mentioned steps
Layer structure, and formed after each layer structure of the second photosensitive unit in the first film transistor, the method further includes：
The structure of interlayer insulating film is formed on the underlay substrate for completing above-mentioned steps, and in the knot of the interlayer insulating film
Position corresponding with the second position forms the structure of second electrode on structure.
The present invention can realize following advantageous effect：
Fingerprint recognition device provided by the invention includes the first photosensitive unit, the second photosensitive unit and the first film crystal
Pipe, first film transistor are used to export the photo-signal of the first photosensitive unit, and the first photosensitive unit can be by the paddy of finger
Current signal is converted to the optical signal of ridge, the second photosensitive unit is connected with the grid of first film transistor, when due to touch-control
The light signal strength of the valley and a ridge reflection of finger is different, and the second photosensitive unit can generate the photovoltage of varying strength, the light
On voltage-drop loading to the grid of first film transistor, the channel state of first film transistor is thus controlled, finger is amplified
The ratio of the photoelectric current of valley and a ridge amplifies the difference of the photoelectric current of the valley and a ridge of finger, to improve fingerprint recognition device
Accuracy of detection and sensitivity.
Description of the drawings
Fig. 1 is the structural schematic diagram of fingerprint recognition device provided by the invention；
Fig. 2 is the circuit diagram of a fingerprint recognition device provided by the invention；
Fig. 3 is the signal timing diagram of fingerprint recognition device provided by the invention；
Fig. 4 is the preparation flow figure of fingerprint recognition device provided by the invention.
Marginal data：
1, the first photosensitive unit 2, underlay substrate 3, the second photosensitive unit
4, the grid 5 of TFT1, buffer layer 6, active layer
7, grid 9, the interlayer insulating film of insulating layer 8, TFT2
11, first electrode 12, second electrode
Specific implementation mode
Below in conjunction with the attached drawing in the present invention, clear, complete description is carried out to the technical solution in the present invention, is shown
So, described embodiment is a part of the embodiment of the present invention, instead of all the embodiments.Based on the implementation in the present invention
Example, the every other embodiment that those of ordinary skill in the art are obtained without making creative work all belong to
In the scope of protection of the invention.
The present invention provides a kind of fingerprint recognition device, and the fingerprint recognition device is applied to touch panel, in conjunction with Fig. 1 and figure
Shown in 2, the fingerprint recognition device includes the first photosensitive unit 1, and the first photosensitive unit 1 is formed on underlay substrate 2, and being used for will
The optical signal of the valley and a ridge reflection of finger is converted to photo-signal.The fingerprint recognition device further includes：Second photosensitive unit 3
It is formed on underlay substrate 2 with first film transistor TFT1, first film transistor TFT1, for exporting the first photosensitive unit
1 photo-signal.Second photosensitive unit 3 be arranged on underlay substrate 2, and with 4 phase of the grid of first film transistor TFT1
Even, the optical signal for being reflected according to the valley and a ridge of finger generates photovoltage, and the photovoltage is delivered to the first film crystalline substance
The grid 4 of body pipe TFT1, to amplify the ratio of the paddy of the first photosensitive unit 1 generation and 2 photo-signal.
The light of the valley and a ridge reflection for the finger that first photosensitive unit 1 is received with the second photosensitive unit 3 is identical, if finger
The optical signal of paddy reflection is X1, and the optical signal of the spinal reflex of finger is X2, then X1>X2, the first photosensitive unit 1 are anti-by the paddy of finger
The optical signal X1 penetrated is converted to photo-signal Y1, and the optical signal X2 of the spinal reflex of finger is converted to photo-signal Y2.
In existing fingerprint recognition device, between the photo-signal Y1 and Y2 of finger valley and a ridge and the optical signal X1 and X2 of reflection
Relationship is：Y1/Y2=X1/X2.
In embodiments of the present invention, the photovoltage corresponding with the paddy of finger that the second photosensitive unit 3 generates is V1, generation
Photovoltage corresponding with the ridge of finger is V2, V1/V2=LnX1/LnX2.Corresponding different grid voltage, first film transistor
The channel conduction ability of TFT1 is different, and grid voltage is bigger, and channel conduction ability is stronger, and the electric current of generation is bigger.The first film
The electric current corresponding with the paddy of finger that transistor TFT1 is generated is I1, and the electric current corresponding with the ridge of finger of generation is I2, I1/I2
=V12/V22.It can thus be seen that by the way that the second photosensitive unit 3 and first film transistor TFT1 is arranged, by the electricity of valley and a ridge
The ratio I 1/I2 amplification (at a square amplification) for flowing signal, to be exaggerated finger valley and a ridge photoelectric current difference.
Fingerprint recognition device provided by the invention includes the first photosensitive unit 1, the second photosensitive unit 3 and the first film crystal
Pipe TFT1, first film transistor TFT1 are used to export the photo-signal of the first photosensitive unit 1, and the first photosensitive unit 1 can
The optical signal of the valley and a ridge of finger is converted into current signal, the grid 4 of the second photosensitive unit 3 and first film transistor TFT1
It is connected, the light signal strength of the valley and a ridge reflection of finger is different when due to touch-control, and the second photosensitive unit 3 can generate varying strength
Photovoltage, the photovoltage is loaded on the grid of first film transistor TFT1, thus controls first film transistor
The channel state of TFT1 amplifies the photoelectric current ratio of the valley and a ridge of finger, that is, amplifies the difference of the photoelectric current of the valley and a ridge of finger,
To improve accuracy of detection and the sensitivity of fingerprint recognition device.
Further, as shown in Figure 1, the fingerprint device further includes the second film crystal being formed on underlay substrate 2
Pipe TFT2.Wherein, first film transistor TFT1 and the second photosensitive unit 3 are located at the first position of underlay substrate 2, and first is photosensitive
Unit 1 is located at the second position of underlay substrate 2, and the second thin film transistor (TFT) TFT2 is located at the third place of underlay substrate 2.First light
The side of 1 adjacent substrate substrate 2 of quick unit is provided with first electrode 11, i.e. first electrode 11 is located under the first photosensitive unit 1
Side.The source electrode (not being painted in figure) of first film transistor TFT1 is connected with the first electrode 11 of the first photosensitive unit 1, and first is thin
The drain electrode (not being painted in figure) of film transistor TFT1 is connected with the drain electrode (not being painted in figure) of the second thin film transistor (TFT) TFT2.
Preferably, first film transistor TFT1 and/or the second thin film transistor (TFT) TFT2 is top gate type thin film transistor.The
Two photosensitive units 3 are arranged in sides of the first film transistor TFT1 far from underlay substrate 2, i.e. the second photosensitive unit 3 setting exists
Above first film transistor TFT1, convenient for being connected with the grid of first film transistor TFT1.
Since the second photosensitive unit 3 needs to be connected with the grid 4 of first film transistor TFT1, for the ease of the company of the two
It connects, it is preferred that first film transistor TFT1 can be top gate type thin film transistor.And the structure of the second thin film transistor (TFT) TFT2
Identical as the structure of first film transistor TFT1, therefore, first film transistor TFT1 and the second thin film transistor (TFT) TFT2 can
It is formed with synchronous, in this way, the second thin film transistor (TFT) TFT2 is preferably also top gate type thin film transistor.Certainly, if not considering to make
The type of standby simplicity, the second thin film transistor (TFT) TFT2 can also be different from the type of first film transistor TFT1.If
Do not consider the convenience of connection, first film transistor TFT1 and/or the second thin film transistor (TFT) TFT2 may be that bottom gate type is thin
Film transistor.
In embodiments of the present invention, it is that top gate type is thin with first film transistor TFT1 and the second thin film transistor (TFT) TFT2
It is illustrated for film transistor.
As shown in Figure 1, be disposed with buffer layer 5, active layer 6, insulating layer 7 on underlay substrate 2, on insulating layer 7 with
The corresponding position of the third place is provided with the grid 8 of the second thin film transistor (TFT) TFT2, opposite with first position on insulating layer 7
The position answered is provided with the grid 4 of first film transistor TFT1, the position setting corresponding with the second position on insulating layer 7
There is first electrode 11.Preferably, buffer layer 5, active layer 6 and insulating layer 7 are first film transistor TFT1 and the second film is brilliant
Layer structure shared body pipe TFT2, it is preferred that the grid 4 of first film transistor TFT1, the second thin film transistor (TFT) TFT2 grid
Pole 8 is arranged with 11 same layer of first electrode and synchronous formation.In the second thin film transistor (TFT) TFT2, the second photosensitive unit 3 and the first light
Side of the quick unit 1 far from underlay substrate 2 is additionally provided with interlayer insulating film 9.
In embodiments of the present invention, it is preferred that the first photosensitive unit 1 and/or the second photosensitive unit 3 are photodiode.
The photodiode may include p type semiconductor layer, I type semiconductor layers and n type semiconductor layer, p type semiconductor layer, I types half
Conductor layer and n type semiconductor layer are stacked, i.e. the first photodiode 1 and/or the second photodiode 3 are PIN type photoelectricity
Diode.First photosensitive unit 1 (PIN1) is arranged on underlay substrate 2, and the second photosensitive unit 3 (PIN2) is arranged in the first film
On transistor TFT1, first film transistor TFT1 is arranged on underlay substrate 2, and the first photosensitive unit 1 (PIN1) is far from substrate
The side of substrate 2 is provided with the second electrode 12 for loading bias voltage, i.e. second electrode 12 is arranged in interlayer insulating film 9
On, first electrode 11 and second electrode 12 are located at the both sides of the first photosensitive unit 1.
It should be noted that the first photosensitive unit 1 and/or the second photosensitive unit 3 or triode, photo resistance etc.
Light-sensitive element.In embodiments of the present invention, in the first photosensitive unit 1 and/or the second photosensitive unit 3, the half of adjacent substrate substrate 2
Conductor layer is p type semiconductor layer, and the semiconductor layer far from underlay substrate 2 is n type semiconductor layer, that is, the first photosensitive unit 1 and/
Or second the structure from top to bottom of photosensitive unit 3 be：N type semiconductor layer-I type semiconductor layers-p type semiconductor layer, N-type semiconductor
The bias voltage loaded on layer is positive voltage.Certainly, skilled person will appreciate that, the first photosensitive unit 1 and/or second is photosensitive
Unit 3 or PN type photodiodes, that is, only include the p type semiconductor layer and n type semiconductor layer being stacked, the two it
Between and be not provided with I type semiconductor layers.
As shown in Fig. 2, the second photosensitive unit 3 (PIN2) is in open-circuit condition, the i.e. N-type semiconductor of the second photosensitive unit 3
It is not loaded with voltage on layer.
Since the photovoltage that the second photosensitive unit 3 (PIN2) generates is smaller, usually only several volts of zero, it is preferred, therefore, that
The threshold voltage of first film transistor TFT1 is -1~0V, in this way, opening the first film convenient for the second photosensitive unit 3 (PIN2)
Transistor TFT1.
Below in conjunction with Fig. 1 to Fig. 3, the course of work of fingerprint recognition device is described in detail.
X1, X2 signal are the paddy of finger or the optical signal of spinal reflex.The source electrode of first film transistor TFT1 and the first light
The first electrode 11 of quick unit 1 (PIN1) is connected, for loading bias voltage V4 on the first photosensitive unit 1 (PIN1).At this
In inventive embodiments, the n type semiconductor layer of the first photosensitive unit 1 (PIN1) is upper, and p type semiconductor layer is under, the bias voltage
V1 is positive voltage.The photovoltage corresponding with the valley and a ridge of finger that second photosensitive unit 3 (PIN2) generates is respectively V1, V2, is somebody's turn to do
Photovoltage V1, V2 are loaded into the grid of first film transistor TFT1 respectively, and therefore, the paddy of photovoltage V1, V2 finger or ridge are anti-
The optical signal X1 or X2 penetrated is directly proportional.As optical signal X1, X2 of the paddy or spinal reflex that generate finger, since bias voltage inputs
Line (com lines) loads bias voltage V4 to the first photosensitive unit 1 (PIN1) so that the first photosensitive unit 1 (PIN1) generates photoelectricity
Stream.Photovoltage V1, V2 that second photosensitive unit 3 (PIN2) generates are loaded into the grid of first film transistor TFT1, pass through control
The channel state of first film transistor TFT1 processed, amplification the first photosensitive unit 1 (PIN1) generate finger valley and a ridge between
Photoelectric current difference.The grid of the first film crystal light TFT1 is connected with grid line Gate, and grid line Gate is to the first film crystal light
The voltage that the grid 4 of TFT1 loads is V3, and each second thin film transistor (TFT) TFT2 for making to be connected with row grid line Gate is opened,
Progressive scan is realized, to determine position of touch.
The embodiment of the present invention also provides a kind of touch panel, and the touch panel includes multiple foregoing fingerprint recognitions
Device, each fingerprint recognition device are arranged in arrays.Preferably, the pixel unit of the quantity and touch panel of each fingerprint recognition device
Quantity it is identical, and correspond.
Touch panel provided by the invention includes multiple fingerprint recognition devices arranged in arrays, and fingerprint recognition device includes
First photosensitive unit 1, the second photosensitive unit 3 and first film transistor TFT1, first film transistor TFT1 are for exporting the
The optical signal of the valley and a ridge of finger can be converted to electric current letter by the photo-signal of one photosensitive unit 1, the first photosensitive unit 1
Number, the second photosensitive unit 3 is connected with the grid 4 of first film transistor TFT1, the valley and a ridge reflection of finger when due to touch-control
Light signal strength is different, and the second photosensitive unit 3 can generate the photovoltage of varying strength, and the photovoltage is loaded into the first film
On the grid of transistor TFT1, the channel state of first film transistor TFT1 is thus controlled, the light of the valley and a ridge of finger is amplified
Current ratio amplifies the difference of the photoelectric current of the valley and a ridge of finger, to improve the inspection of fingerprint recognition device and touch panel
Survey accuracy and sensitivity.
Fingerprint recognition device provided by the invention, to visible light detection sensitivity height.Utilize the first photosensitive unit 1 (PIN1)
It converts the light of varying strength to the electric signal of varying strength, different luminous intensities is generated using the second photosensitive unit 3 (PIN2)
Photovoltage is put the electrical signal differential of PIN1 by the combination of TFT2 and PIN2 with adjusting the second thin film transistor (TFT) TFT2 raceway grooves
Greatly, the sensitivity of detection optical signal is improved.Such fingerprint recognition device can be applied to the fingerprint recognition array of touch panel
In, it being capable of the effectively resolving power of sensor and sensitivity.
The embodiment of the invention also includes a kind of preparation methods of fingerprint recognition device, in conjunction with shown in Fig. 1 and Fig. 4, the side
Method includes the following steps：
Step 41, each layer structure of first film transistor TFT1 is formed in the first position of underlay substrate 2.
First film transistor TFT1 is top gate type thin film transistor.Specifically, first, being utilized on underlay substrate 2
PECVD (Plasma Enhanced Chemical Vapor Deposition, the vapor deposition of plasma enhanced chemical) work
Skill deposition thickness is the SiO of 3000A2To form buffer layer 5；Then the IGZO that thickness is 700A is sputtered on buffer layer 5
(Indium Gallium Zinc Oxide, indium gallium zinc) material, and the figure of active layer 6 is obtained in the way of wet etching
Shape；Then the SiO that pecvd process deposition thickness is 3000A is utilized on active layer 62Material, and obtained in the way of dry etching
To the figure of insulating layer 7.
It should be noted that during forming active layer 6, to the position of the grid 4 of first film transistor TFT1
Annealing process is carried out at the position of the grid 8 of place and the second thin film transistor (TFT) TFT2 to be formed, to reduce source-drain electrode and ditch
Resistivity between road area, it is preferred that annealing temperature can be 450 DEG C.
Step 42, each layer knot of the first photosensitive unit 1 is formed in the second position for completing the underlay substrate 2 of above-mentioned steps
Structure, and form on first film transistor TFT1 each layer structure of the second photosensitive unit 3.
Wherein, first film transistor TFT1 is used to export the photo-signal of the first photosensitive unit 1.Second photosensitive unit
3 are connected with the grid 4 of first film transistor TFT1, and the light for being reflected according to the valley and a ridge of finger generates photovoltage, and will
The photovoltage is delivered to the grid 4 of first film transistor TFT1, to amplify the light for the valley and a ridge that the first photosensitive unit 1 generates
The ratio of current signal.
Specifically, pecvd process and dry etch process can be utilized to form the first photosensitive unit 1 and the second photosensitive unit
3 each layer structure.
It can be seen that by step 41-42 and the first photosensitive unit 1 and the formed by the different location in underlay substrate 2
One thin film transistor (TFT) TFT1, first film transistor TFT1 are used to export the photo-signal of the first photosensitive unit 1, thin first
The second photosensitive unit 3 is formed on film transistor TFT1, the second photosensitive unit 3 is connected with the grid 4 of first film transistor TFT1,
The optical signal of the valley and a ridge of finger can be converted to current signal by the first photosensitive unit 1, the valley and a ridge of finger when due to touch-control
The light signal strength of reflection is different, and the second photosensitive unit 3 can generate the photovoltage of varying strength, and the photovoltage is loaded into the
On the grid of one thin film transistor (TFT) TFT1, thus control the channel state of first film transistor TFT1, amplify finger paddy and
The photoelectric current ratio of ridge amplifies the difference of the photoelectric current of the valley and a ridge of finger, to improve the detection essence of fingerprint recognition device
Degree and sensitivity, this method step is simple, is easily achieved.
Further, described to form each of the first photosensitive unit 1 in the second position for completing the underlay substrate 2 of above-mentioned steps
Layer structure, and each layer structure for forming on first film transistor TFT1 the second photosensitive unit 3 is (described i.e. before step 42)
Method is further comprising the steps of：
Step 41 ', form each layer structure of the second thin film transistor (TFT) TFT2 in the third place of underlay substrate 2, wherein the
The drain electrode layer of two thin film transistor (TFT) TFT2 is connected with the drain electrode of first film transistor TFT1.
It should be noted that step 41 and step 41 ' execution sequence it is unlimited.Preferably, the second thin film transistor (TFT) TFT2
Also it is top gate type thin film transistor, in this way, first film transistor TFT1 is identical as the structure of the second thin film transistor (TFT) TFT2, two
Person can synchronize preparation, i.e. step 41 and step 41 ' it is synchronous execute, each layer structure of first film transistor TFT1 and second thin
Each layer structure synchronization of film transistor TFT2 is formed, to simplify preparation process.
Further, described to form each layer structure of first film transistor TFT1 (i.e. in the first position of underlay substrate 2
Each layer structure of the first photosensitive unit 1 is formed after step 41) and in the second position for completing the underlay substrate 2 of above-mentioned steps,
And each layer structure of the second photosensitive unit 3 is formed on first film transistor TFT1 (i.e. before step 42), the method is also
Include the following steps：
Step 42 ', form first electrode 11 in the second position of underlay substrate 2, wherein first electrode 11 and the first film
The source layer of transistor TFT1 is connected.
Specifically, molybdenum (Mo) metal layer that thickness is 3000A is sputtered on insulating layer 7, and the shape in the way of wet etching
At the figure of first electrode 11.It preferably, can be by the gate patterns of TFT1, the figure of the gate patterns of TFT2 and first electrode 11
It is formed just as step.
Correspondingly, forming each layer structure of the first photosensitive unit 1 in the second position for completing the underlay substrate 2 of above-mentioned steps
(i.e. step 42) specifically includes：Each layer structure of the first photosensitive unit 1 (PIN1) is formed in first electrode 11.
It should be noted that step 42, the execution sequence of ' with step 41 ' is unlimited.
Further, each of the first photosensitive unit 1 is formed in the second position of the underlay substrate 2 for completing above-mentioned steps
Layer structure, and each layer structure for forming on first film transistor TFT1 the second photosensitive unit 3 is (described i.e. after step 42)
Method is further comprising the steps of：
Step 43, complete above-mentioned steps underlay substrate 2 on formed interlayer insulating film 9, and on interlayer insulating film 9 with
The corresponding position in the second position forms second electrode 12.
Specifically, being the SiN materials of 2000A using pecvd process deposition thickness, and layer is obtained in the way of dry etching
Between insulating layer 9 figure.ITO (the oxidations that position sputtering thickness corresponding with the second position is 400A on interlayer insulating film 9
Indium tin) material, and the figure of second electrode 12 is obtained in the way of wet etching.
In embodiments of the present invention, the sequence that preferably is carried out of each step is：It is synchronous to execute step 41 and step 41 ' → step
42 ' → step 42 → step 43.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of fingerprint recognition device, is applied to touch panel, the fingerprint recognition device includes：It is formed on underlay substrate
, the first photosensitive unit for the optical signal of the valley and a ridge of finger reflection to be converted to photo-signal, which is characterized in that also
Including the second photosensitive unit and the first film transistor being formed on the underlay substrate, the first film transistor is used for
Export the photo-signal of first photosensitive unit；The grid phase of second photosensitive unit and the first film transistor
Even, the optical signal generation photovoltage for reflect according to the valley and a ridge of finger, and it is thin that the photovoltage is delivered to described first
The grid of film transistor, to amplify the ratio of the photo-signal for the valley and a ridge that first photosensitive unit generates.
2. fingerprint device as described in claim 1, which is characterized in that further include be formed on the underlay substrate it is second thin
Film transistor；First photosensitive unit is provided with first electrode adjacent to the side of the underlay substrate；
The source electrode of the first film transistor is connected with the first electrode of first photosensitive unit, the first film crystal
The drain electrode of pipe is connected with the drain electrode of second thin film transistor (TFT).
3. fingerprint device as claimed in claim 2, which is characterized in that the first film transistor and/or described second thin
Film transistor is top gate type thin film transistor；Second photosensitive unit is arranged in the first film transistor far from the lining
The side of substrate.
4. fingerprint device as claimed in claim 3, which is characterized in that first photosensitive unit and/or described second photosensitive
Unit is photodiode, including at least the p type semiconductor layer and n type semiconductor layer being stacked,
The side of first photosensitive unit far from the underlay substrate is provided with the second electrode for loading bias voltage.
5. fingerprint recognition device as described in claim 1, which is characterized in that second photosensitive unit is in open-circuit condition.
6. fingerprint recognition device as described in any one in claim 1-5, which is characterized in that the threshold of the first film transistor
Threshold voltage is -1~0V.
7. a kind of touch panel, which is characterized in that each described including multiple fingerprint recognition devices as described in claim 1-6
Fingerprint recognition device is arranged in arrays.
8. a kind of preparation method of fingerprint recognition device, which is characterized in that the method includes：
Each layer structure of first film transistor is formed in the first position of underlay substrate；
Each layer structure of the first photosensitive unit is formed in the second position for completing the underlay substrate of above-mentioned steps, and described first
Each layer structure of the second photosensitive unit is formed on thin film transistor (TFT)；Wherein, the first film transistor is for exporting described the
The photo-signal of one photosensitive unit；Second photosensitive unit is connected with the grid of the first film transistor, is used for root
The light reflected according to the valley and a ridge of finger generates photovoltage, and the photovoltage is delivered to the grid of the first film transistor
Pole, to amplify the ratio of the photo-signal for the valley and a ridge that first photosensitive unit generates.
9. method as claimed in claim 8, which is characterized in that in the second in the underlay substrate for completing above-mentioned steps
Each layer structure to form the first photosensitive unit is set, and forms each layer knot of the second photosensitive unit in the first film transistor
Before structure, the method further includes：
Each layer structure of the second thin film transistor (TFT) is formed in the third place of the underlay substrate, wherein second film is brilliant
The drain electrode layer of body pipe is connected with the drain electrode of the first film transistor；
After each layer structure that the first position of underlay substrate forms first film transistor, in the substrate for completing above-mentioned steps
The second position of substrate forms each layer structure of the first photosensitive unit, and formation second is photosensitive in the first film transistor
Before each layer structure of unit, shown method further includes：
First electrode is formed in the second position of the underlay substrate, wherein the first electrode and the first film crystal
The source layer of pipe is connected.
10. method as claimed in claim 8 or 9, which is characterized in that described the of the underlay substrate for completing above-mentioned steps
Two positions form each layer structure of the first photosensitive unit, and each of the second photosensitive unit is formed in the first film transistor
After layer structure, the method further includes：
The structure of interlayer insulating film is formed on the underlay substrate for completing above-mentioned steps, and in the structure of the interlayer insulating film
Position corresponding with the second position forms the structure of second electrode.
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