CN108369900A

CN108369900A - Utilize the electrical part of contra-doping knot

Info

Publication number: CN108369900A
Application number: CN201680069616.1A
Authority: CN
Inventors: C.J.奥古斯托
Original assignee: Quantum Semiconductor LLC
Current assignee: Quantum Semiconductor LLC
Priority date: 2015-09-29
Filing date: 2016-09-29
Publication date: 2018-08-03
Anticipated expiration: 2036-09-29
Also published as: US20200343401A1; CN108369900B; WO2017059146A1; US11424382B2; US20220367744A1; US11888079B2; US20180301584A1; US10756227B2

Abstract

A kind of electrical part includes the contra-doping hetero-junctions selected from the group being made of pn-junction or p i n knots.First semiconductor of the contra-doping knot including the use of the main dopant species doping of one or more N-shapeds and the second semiconductor using the main dopant species doping of one or more p-types.The device further include from by the first semiconductor and the second semiconductor group at group in the first contra-doping component for selecting.Contra-doping is carried out to the first contra-doping component using one or more contra-doping agent types, which has the opposite polarity polarity with the main dopant being included in the first contra-doping component.In addition, the main dopant of N-shaped of selection certain level, the main dopant of p-type and one or more contra-doping agent are so that contra-doping hetero-junctions provides amplification by phonon auxiliary mechanism and the amplification is with the starting voltage less than 1V.

Description

Utilize the electrical part of contra-doping knot

Related application

The U.S. Provisional Patent Application in September in 2015 is submitted and be hereby incorporated by reference in its entirety on the 29th is claimed in this application The equity of sequence number 62/234,578.

Technical field

The present invention relates to semiconductors, and relate more particularly to the device using cycle excitation process.

Background technology

Various semiconductors utilize signal to amplify using the mechanism by such as ionization by collision.These devices show Example includes but not limited to transistor and photodiode.However, ionization by collision mechanism is with low power efficiency and as amplification increases Noise level it is associated.Further, the noise level of these devices can be with the scalability of limit device.Accordingly, there exist to profit With with the one or more characteristics selected from the group that noise level, increased power efficiency and the scalability by reducing form Signal amplification semiconductor application needs.

Invention content

A kind of electrical part includes the contra-doping hetero-junctions selected from the group being made of pn-junction or p-i-n junction.Contra-doping knot Including the use of the first semiconductor and the main dopant of the one or more p-types of utilization of the main dopant species doping of one or more N-shapeds Second semiconductor of type doping.The equipment further include from by the first semiconductor and the second semiconductor group at group in select One contra-doping component.Using one or more contra-doping agent types come to the first contra-doping component carry out contra-doping, this or Multiple contra-doping agent types have the opposite polarity polarity with the main dopant being included in the first contra-doping component.In addition, Select the main dopant of N-shaped, the main dopant of p-type and one or more contra-doping agent of certain level so that the contra-doping hetero-junctions is logical Cross phonon auxiliary mechanism provide amplification and the amplification have less than 1V, 2V or 3V starting voltage.

Description of the drawings

Figure 1A is until Fig. 1 F illustrate various contra-doping knots.Figure 1A be with not by the second the half of contra-doping Conductor forms the contra-doping PN junction of the first semiconductor of the contra-doping of pn-junction.

Wherein the first semiconductor is not by contra-doping but the second semiconductor is by the PN junction of contra-doping for Figure 1B diagrams.

Fig. 1 C illustrate wherein both the first semiconductor and the second semiconductor by the PN junction of contra-doping.

The p-i-n that Fig. 1 D are shown in the contra-doping with third semiconductor between the first semiconductor and the second semiconductor is heterogeneous Knot.First semiconductor is by contra-doping but the second semiconductor is not by contra-doping.

The p-i-n that Fig. 1 E are shown in the contra-doping with third semiconductor between the first semiconductor and the second semiconductor is heterogeneous Knot.First semiconductor is not by contra-doping but the second semiconductor is by contra-doping.

The p-i-n that Fig. 1 F are shown in the contra-doping with third semiconductor between the first semiconductor and the second semiconductor is heterogeneous Knot.Both first semiconductor and the second semiconductor are all by contra-doping.

Fig. 2 illustrates a series of electric current ratio of the photodiode of parallel connections for the photosensitive element for being manufactured to cmos pixel To bias results.

Fig. 3 A are the cross sections for the photodiode for including contra-doping p-i-n junction.

Fig. 3 B are the example energy band energy diagrams for the photodiode of the constructions of A according to fig. 3（band energy diargram）.

Fig. 3 C are another example energy band energy diagrams for the photodiode of the constructions of A according to fig. 3.

Fig. 3 D are another example energy band energy diagrams for the photodiode of the constructions of A according to fig. 3.

Fig. 3 E are the cross sections for the photodiode for including contra-doping pn-junction.

Fig. 3 F are the example energy band energy diagrams for the photodiode of the constructions of E according to fig. 3.

Fig. 3 G are two pole of photoelectricity for including the contra-doping pn-junction contacted with the light absorbing medium outside contra-doping pn-junction The cross section of pipe.

Fig. 3 H illustrate the outer edge with encirclement photodiode of A according to fig. 3 and are located at contra-doping knot and optional electricity The photodiode of pinning layer between insulator.

Fig. 3 I illustrate the outer edge with encirclement photodiode of G according to fig. 3 and are located at contra-doping knot and optional electricity The photodiode of pinning layer between insulator.

Fig. 4 A are the photodiodes for including the source electrode for being electrically connected to NMOS transistor or Fig. 3 H of drain electrode（The two is all in phase It is made on same active region）Opto-electronic device cross section.

Fig. 4 B are the photoelectron devices for including the source electrode for being electrically connected to NMOS transistor or the photodiode of Fig. 3 H of drain electrode The cross section of part.The photodiode and NMOS transistor are made of the adjacent active regions domain being separated by isolated area/structure.

Fig. 4 C are the photoelectron devices for including the source electrode for being electrically connected to NMOS transistor or the photodiode of Fig. 3 H of drain electrode The cross section of part.The pinning layer of photodiode from Fig. 3 H and one in the substrate including positioning photodiode on it A or multiple secondary pinning layer telecommunications.

Fig. 4 D are the photoelectron devices for including the source electrode for being electrically connected to NMOS transistor or the photodiode of Fig. 3 H of drain electrode Another exemplary cross section of part.The pinning layer of photodiode from Fig. 3 H with including positioning photodiode on it One or more of substrate time pinning layer telecommunication.

Fig. 5 A are to include according in Fig. 1 D any of contra-doping p-i-n hetero-junctions constructions disclosed in Fig. 1 F Contra-doping p-i-n hetero-junctions tunnel MOSFET schematic diagram.

Fig. 5 B are when electronic device does not apply electric energy to transistor for according to one of the tunnel MOSFET of Fig. 5 A Exemplary example energy band energy diagram.

Fig. 5 C be in the case that shown in the apparent Fig. 5 B of influence of material interface and fermi level valence band and conduction band more True version.

Fig. 5 D are until Fig. 5 G are shown during the operation of transistor for Fig. 5 A until the tunnel transistor of Fig. 5 C Qualitative energy band alignment.Fig. 5 D show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition> 0 And VGS>0, or for T-PMOS, VDS<0 and VGS=0.

Fig. 5 E show the energy band alignment for bias condition, for T-NMOS, VDS=0 and VGS under the bias condition >0, or for T-PMOS, VDS=0 and VGS=0.

Fig. 5 F show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition>0 and VGS= 0, or for T-PMOS, VDS<0 and VGS< 0.

Fig. 5 G show the energy band alignment for bias condition, for T-NMOS under the bias condition, VDS=0 and VGS= 0, or for T-PMOS, VDS=0 and VGS< 0.

Fig. 6 A are when electronic device does not apply electric energy to transistor for according to one of the tunnel MOSFET of Fig. 5 A Exemplary example energy band energy diagram.

Fig. 6 B be in the case that shown in the apparent Fig. 6 A of influence of material interface and fermi level valence band and conduction band more True version.

Fig. 6 C are until Fig. 6 F are shown during the operation of transistor for Fig. 6 A until the tunnel transistor of Fig. 6 B Qualitative energy band alignment.Fig. 6 C show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition>0 and VGS>0, or for T-PMOS, VDS<0 and VGS=0.

Fig. 6 D show the energy band alignment for bias condition, for T-NMOS, VDS=0 and VGS under the bias condition> 0, or for T-PMOS, VDS=0 and VGS=0.

Fig. 6 E show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition>0 and VGS> 0, or for T-PMOS, VDS<0 and VGS=0.

Fig. 6 F show the energy band alignment for bias condition, for T-NMOS under the bias condition, VDS=0 and VGS= 0, for T-PMOS, VDS=0 and VGS< 0.

Fig. 7 A are when electronic device does not apply electric energy to transistor for according to one of the tunnel MOSFET of Fig. 5 A Exemplary example energy band energy diagram.

Fig. 7 B be in the case that shown in the apparent Fig. 7 A of influence of material interface and fermi level valence band and conduction band more True version.

Fig. 7 C are until Fig. 7 F are shown during the operation of transistor for Fig. 7 A until the tunnel transistor of Fig. 7 B Qualitative energy band alignment.Fig. 7 C show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition>0 and VGS >0, or for T-PMOS, VDS<0 and VGS=0.

Fig. 7 D show the energy band alignment for bias condition, for T-NMOS, VDS=0 and VGS under the bias condition> 0, or for T-PMOS, VDS=0 and VGS=0.

Fig. 7 E show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition>0 and VGS= 0, or for T-PMOS, VDS<0 and VGS< 0.

Fig. 7 F show the energy band alignment for bias condition, for T-NMOS under the bias condition, VDS=0 and VGS= 0, or for T-PMOS, VDS=0 and VGS< 0.

Fig. 8 A are when electronic device does not apply electric energy to transistor for according to one of the tunnel MOSFET of Fig. 5 A Exemplary example energy band energy diagram.

Fig. 8 B be in the case that shown in the apparent Fig. 8 A of influence of material interface and fermi level valence band and conduction band more True version.

Fig. 8 C are until Fig. 8 F are shown during the operation of transistor for Fig. 8 A until the tunnel transistor of Fig. 8 B Qualitative energy band alignment.Fig. 8 C show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition> 0 And VGS>0, or for T-PMOS, VDS<0 and VGS=0.

Fig. 8 D show the energy band alignment for bias condition, for T-NMOS, VDS=0 and VGS under the bias condition> 0, or for T-PMOS, VDS=0 and VGS=0.

Fig. 8 E show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition>0 and VGS= 0, or for T-PMOS, VDS<0 and VGS< 0.

Fig. 8 F show the energy band alignment for bias condition, for T-NMOS, VDS=0 and VGS=0 under the bias condition, Or for T-PMOS, VDS=0 and VGS< 0.

Fig. 9 A are when electronic device does not apply electric energy to transistor for according to one of the tunnel MOSFET of Fig. 5 A Exemplary another example energy band energy diagram.

Fig. 9 B be in the case that shown in the apparent Fig. 9 A of influence of material interface and fermi level valence band and conduction band more True version.

Fig. 9 C are until Fig. 9 F are shown during the operation of transistor for Fig. 9 A until the tunnel transistor of Fig. 9 B Qualitative energy band alignment.Fig. 9 C show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition> 0 And VGS>0, or for T-PMOS, VDS<0 and VGS=0.

Fig. 9 D show the energy band alignment for bias condition, for T-NMOS, VDS=0 and VGS under the bias condition> 0, or for T-PMOS, VDS=0 and VGS=0.

Fig. 9 E show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition>0 and VGS= 0, or for T-PMOS, VDS<0 and VGS< 0.

Fig. 9 F show the energy band alignment for bias condition, for T-NMOS, VDS=0 and VGS=0 under the bias condition, Or for T-PMOS, VDS=0 and VGS< 0.

Figure 10 A are when electronic device does not apply electric energy to transistor for according to one of the tunnel MOSFET of Fig. 5 A Exemplary another example energy band energy diagram.

Figure 10 B are in the valence band and conduction band shown in the apparent Figure 10 A of influence of material interface and fermi level Truer version.

Figure 10 C are until Figure 10 F are shown during the operation of transistor for Figure 10 A until the tunnel crystal of Figure 10 B The qualitative energy band of pipe is aligned.Figure 10 C show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition >0 and VGS>0, or for T-PMOS, VDS<0 and VGS=0.

Figure 10 D show the energy band alignment for bias condition, for T-NMOS, VDS=0 and VGS under the bias condition >0, or for T-PMOS, VDS=0 and VGS=0.

Figure 10 E show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition>0 and VGS =0, or for T-PMOS, VDS<0 and VGS< 0.

Figure 10 F show the energy band alignment for bias condition, for T-NMOS under the bias condition, VDS=0 and VGS= 0, or for T-PMOS, VDS=0 and VGS< 0.

Figure 11 A be include Heterojunction Bipolar Transistors（HBT）Device a part cross section.The heterogenous dual-pole Transistor npn npn（HBT）Include the base stage between collector and emitter so that charge by base stage in collector and transmitting It is flowed between pole.

Figure 11 B are to include modified so that collector 102 includes the heterojunction bipolar crystalline substance of Figure 11 A of multiple sublayers The cross section of a part for the device of body pipe.

Figure 11 C are to include modified so that collector 102 includes the heterojunction bipolar crystalline substance of Figure 11 A of multiple sublayers A part of another cross section of the device of body pipe.

Figure 11 D are when electronic device does not apply electric energy to transistor for exemplary according to one of the HBT of Figure 11 A Example energy band energy diagram.

Figure 11 E are in the valence band and conduction band shown in the apparent Figure 11 D of influence of material interface and fermi level Truer version.

Figure 12 A diagrams are modified to operate the figure as the laser that can be HBT lasers or DHBT lasers The transistor of 11B.

Figure 12 B are when electronic device does not apply electric energy to transistor for an example according to the light source of Figure 12 A Example energy band energy diagram.

Figure 12 C are in the valence band and conduction band shown in the apparent Figure 12 B of influence of material interface and fermi level Truer version.

A part for device of Figure 13 A diagrams with optical sensor, which includes being modified to include contra-doping Transistor of the p-i-n junction as Figure 11 C of the knot between emitter and base stage.

Figure 13 B are when electronic device does not apply electric energy to transistor for the optical sensor or crystal according to Figure 13 A One exemplary another example energy band energy diagram of pipe.

Figure 13 C are in the valence band and conduction band shown in the apparent Figure 13 B of influence of material interface and fermi level Truer version.

Figure 13 D are when electronic device does not apply electric energy to transistor for the optical sensor or crystal according to Figure 13 A Another example energy band energy diagram of pipe.

Figure 13 E are in the valence band and conduction band shown in the apparent Figure 13 D of influence of material interface and fermi level Truer version.

Figure 13 F are shown in before electronic device is biased to HBT and are directed to such as device shown in Figure 11 C or Figure 13 A The energy band diagram of part.

Figure 13 G are shown in electronic device operation optical sensor or transistor to execute energy band diagram when electronics amplification.

Figure 13 H are when electronic device does not apply electric energy to transistor for the optical sensor or crystal according to Figure 13 A Another example energy band energy diagram of pipe.

Figure 13 I are in the valence band and conduction band shown in the apparent Figure 13 B of influence of material interface and fermi level Truer version.

Figure 14 is the cross section of superlattices system.

Specific implementation mode

Various devices include one or more contra-doping knots.Contra-doping knot can be p-n junction or p-i-n junction, Include by the p-type semiconductor of contra-doping and/or by the n-type semiconductor of contra-doping.When also using n-type dopant come doped p type half The p-type semiconductor is contra-doping when conductor, and when also using p-type dopant come n-type semiconductor when adulterating n-type semiconductor It is contra-doping.Contra-doping allows amplification by phonon auxiliary mechanism rather than is occurred by ionization by collision.Phonon auxiliary machine The starting of system can be at unexpected the lower voltage level of the starting of the amplification with respect to ionization by collision.Therefore, Device including these knots can have the power efficiency improved.Further, these knots can be provided with the noise reduced The device of grade.The noise level of the reduction can enhance the scalability of these devices.

The p-n junction and p-i-n junction can also be hetero-junctions.Contra-doping（Or doping compensation）Combination with hetero-junctions can be to These devices provide the unexpectedly big reduction for amplifying the starting voltage occurred.For example, hetero-junctions can be provided in greatly Amplification at about half volt originates, and about 10000 gain is arrived under only one volt.On the contrary, homojunction is in three volts Place generates 10000 gain.These results show when using homojunction, to need about 9 times of power about the same to generate Gain level.Contra-doping（Or doping compensation）Combination with hetero-junctions can be put with that can be realized in forward-biased diodes Greatly, it is led with two and half if hetero-junctions offset is large enough that when the electric charge carrier advanced perpendicular to the hetero-junctions is obtained The difference in potential energy between body（That is energy bandmatch）When corresponding kinetic energy, this is enough to trigger cycle excitation process.Hetero-junctions is also Electric charge carrier can be tied to the optimised area of contra-doping spatially and/or on energy, and therefore spatially about Electron gun is in the optimized gain area of cycle excitation process.In addition, hetero-junctions can also change the phonon spectra in the area spatially constrained, Especially when hetero junction layer strains, it is thus used to optimization phonon assist gain mechanism.In addition, hetero-junctions can be utilized to The energy level of different types of dopant species is changed, and therefore influences the phonon assist gain of cycle excitation process.

Figure 1A is until Fig. 1 F illustrate various contra-doping knots 10.For example, Figure 1A is until Fig. 1 C diagrams are various each The contra-doping pn hetero-junctions of sample.Each hetero-junctions is included in the knot between the first semiconductor 12 and the second semiconductor 14.First 14 direct physical contact of semiconductor 12 and the second semiconductor.Because the knot is hetero-junctions, the first semiconductor 12 and the second half Conductor 14 is different.First semiconductor 12 is doped to become n-type semiconductor and second semiconductor 14 is doped to become For p-type semiconductor.

In figure 1A, the first semiconductor 12 is by contra-doping but the second semiconductor 14 is not by contra-doping.For example, the first half lead Body 12 includes one or more n-type dopants as main dopant and one or more p-type dopants as contra-doping agent, And the second semiconductor 14 includes one or more p-type dopants as main dopant but excludes any contra-doping agent.In Figure 1B In, the first semiconductor 12 is not by contra-doping but the second semiconductor 14 is by contra-doping.For example, the first semiconductor 12 includes as master One or more n-type dopants of dopant and contra-doping agent is excluded, and the second semiconductor 14 includes as main dopant One or more p-type dopants and further include one or more n-type dopants as contra-doping agent.In fig. 1 c, first Semiconductor 12 is by contra-doping and the second semiconductor 14 is by contra-doping.For example, the first semiconductor 12 includes one as main dopant A or multiple n-type dopants and one or more p-type dopants as contra-doping agent, and the second semiconductor 14 includes as leading One or more p-type dopants of dopant and further include one or more n-type dopants as contra-doping agent.

Fig. 1 D are until Fig. 1 F illustrate various contra-doping p-i-n hetero-junctions.Each hetero-junctions is included in first Knot between semiconductor 12 and third semiconductor 16 and also between third semiconductor 16 and the second semiconductor 14.The first half lead Body 12 and 16 direct physical contact of third semiconductor and 14 direct physical contact of third semiconductor 16 and the second semiconductor.Because The p-i-n junction is hetero-junctions, so the first semiconductor 12 is different from third semiconductor 16 and/or the second semiconductor 14 and third Semiconductor 16 is different.In some cases, the first semiconductor 12 and the second semiconductor 14 are identical but different with third semiconductor 16. In some cases, the first semiconductor 12, the second semiconductor 14 and third semiconductor 16 are different from each other.In some cases, Semiconductor 12 is identical as third semiconductor 16 or the second semiconductor 14 is identical as third semiconductor 16.First semiconductor, 12 quilt Doping is to become n-type semiconductor, and the second semiconductor 14 is doped to become p-type semiconductor.The third semiconductor 16 It is intrinsic semiconductor.

In Fig. 1 D, the first semiconductor 12 is by contra-doping but the second semiconductor 14 is not by contra-doping.For example, the first half lead Body 12 includes one or more n-type dopants as main dopant and one or more p-type dopants as contra-doping agent, And the second semiconductor 14 includes one or more p-type dopants as main dopant but excludes any contra-doping agent.In Fig. 1 E In, the first semiconductor 12 is not by contra-doping but the second semiconductor 14 is by contra-doping.For example, the first semiconductor 12 includes as master One or more n-type dopants of dopant simultaneously exclude contra-doping agent, and the second semiconductor 14 include as main dopant one A or multiple p-type dopants and further include one or more n-type dopants as contra-doping agent.In figure 1f, the first half Conductor 12 is by contra-doping and the second semiconductor 14 is by contra-doping.For example, the first semiconductor 12 includes one as main dopant Or multiple n-type dopants and one or more p-type dopants as contra-doping agent, and the second semiconductor 14 includes being mixed as master Miscellaneous dose of one or more p-type dopants and further include one or more n-type dopants as contra-doping agent.

Although Figure 1A until Fig. 1 F by pn junction p n（First semiconductor 12, the second semiconductor 14 or third semiconductor 16） In each diagram as single and continuous material layer, but pn junction p n may include multiple sublayers or by multiple sons Layer composition.When pn junction p n includes multiple layers, it is included in each in the layer in the pn junction p n doped with same pole The dopant of property.When the pn junction p n including multiple sublayers is by contra-doping, be included in the sublayer in the pn junction p n one It is a or multiple by contra-doping.The polarity of main dopant in contra-doping sublayer and it is included in not by the pn junction p n of contra-doping Any other sublayer polarity it is identical.

In figure 1A, the first semiconductor 12, the second semiconductor 14 and third semiconductor 16 are shown as different components；So And the one or more components selected from the group being made of the first semiconductor 12, the second semiconductor 14 and third semiconductor 16 It can be the doped region of bigger semiconductor.For example, the first semiconductor 12 illustrated above can be include the first semiconductor 12 or By the doped region for the bigger semiconductor that the first semiconductor 12 forms.Therefore, from by the first semiconductor 12, the second semiconductor 14 and The one or more components selected in the group of three semiconductors 16 composition can be the doped region of bigger semiconductor.

Can not be semiconductor in device by the total concentration of the main dopant of one or more of the semiconductor of contra-doping In functionality and other parameters（The size of such as semiconductor, the size of peripheral components and the electric field that be applied to semiconductor） Function.Do not include being more than by the example of the total concentration of the main dopant of one or more of the semiconductor of contra-doping 1.0E16cm^-3、5.0E18cm^-3Or 1.0E20cm^-3And/or it is less than 1.0E21cm^-3、5.0E20cm^-3Or 1.0E20cm^-3It is dense Degree.

The suitable total concentration of the main n-type dopant of one or more of semiconductor by contra-doping includes but not limited to： For before and after the value of the density of states of the conduction band of semiconductor concentration or more than the concentration of the value.In silicon, it means that total concentration 2.82E-19cm can be more than^-3.The suitable total concentration of the main p-type dopant of one or more of semiconductor by contra-doping includes But it is not limited to：Concentration before and after the value for the density of states of the valence band of semiconductor or more than the concentration of the value, for silicon, this Mean to be more than 1.82E-19cm^-3Value.Therefore, by the total concentration of the main dopant of one or more of the semiconductor of contra-doping Including but not limited to：More than 1.0E20cm^-3、1.0E-19cm^-3、1.0E18cm^-3And/or it is less than 5.0E20cm^-3Concentration.It is anti- The total concentration of one or more of semiconductor of doping contra-doping agent can be material and/or semiconductor functionality and/or Other parameters（The size of such as semiconductor, the size of peripheral components and the electric field that be applied to semiconductor）Function.It is anti- The example of the total concentration of one or more of semiconductor of doping contra-doping agent includes but not limited to be more than 2.0E17cm^-3、 2.0E18cm^-3Or 2.0E19cm^-3And/or it is less than 5.0E20cm^-3、1.0E20cm^-3Or 5.0E19cm^-3Concentration.Contra-doping The total concentration of one or more of semiconductor contra-doping agent can be more than total percentage of the dopant in contra-doping semiconductor The 0.1% of ratio or 25% and/or less than the 50% of the percent of total.The concentration of contra-doping agent in contra-doping semiconductor is less than counter mix The concentration of main dopant in miscellaneous semiconductor.Main dopant in N-shaped contra-doping semiconductor is n-type dopant and p-type is counter mixes Main dopant in miscellaneous dose of semiconductor is p-type dopant.

When pn junction p n includes multiple sublayers, the concentration of dopant or main dopant in each sublayer can be more than 2.0E17cm^-3、2.0E18cm^-3Or 2.0E19cm^-3And/or it is less than 5.0E20cm^-3、1.0E20cm^-3Or 5.0E19cm^-3. In some cases, the concentration of the one or more components selected from the group being made of dopant, main dopant and contra-doping agent Change across semiconductor or sublayer.For example, from by the first semiconductor 12, the second semiconductor 14, be included in the first semiconductor 12 One or more sublayers and it is included in the group of one or more of the second semiconductor 14 sublayer composition select one or more A component may include the one or more dopant groups selected from the group being made of dopant, main dopant and contra-doping agent The smooth gradient or stagewise gradient divided.

The knot of contra-doping（Especially hetero-junctions）There can be the surprising low-voltage of the starting for amplification.For The starting voltage of contra-doping knot is the voltage that current gain is more than 1 at which.The electric current of function as the voltage applied increases Benefit can be the leakage current of signal code and the knot（Noise current）Between difference as the voltage applied function increasing Greatly.In some cases, by measuring the leakage current for voltage spaces（Noise current）, measured for identical electricity later It presses the signal code at interval, subtract leakage current from signal code（Noise current）And it determines and subtracts through making at what voltage The value that method calculates starts to increase to determine the starting voltage for contra-doping knot.

Fig. 2 diagrams are compared for a series of electric current of the photodiodes in parallel for the photosensitive element for being manufactured to cmos pixel Bias results.Each of the photodiode has the p-i-n hetero-junctions of contra-doping.It is anti-by applying to photodiode It is measured to bias and the photoelectric current of measurement result to take.As shown in Figure 2, the starting of amplification is sent out at about 0.5V It is raw.It cannot be amplified at low-level voltage surprising in this way to explain by ionization by collision, and made us in this way The proof that amplification is the phonon auxiliary amplification mechanism in heterojunction photodiode occurs at surprised low-level voltage, heterogeneous At least one semiconductor region is type Si in p n junction photodiode_1-xGe_x、Si_1-yC_y、Si_1-x-yGe_xC_yAlloy or other IV races Alloy and/or include the one or more components selected from the group being made of Si, Ge, C, Sn, Pb superlattices.

Starting electricity can be adjusted by changing the dopant profiles of one or more of contra-doping knot contra-doping semiconductor Pressure.The example of the change of dopant profiles includes increasing or reducing the concentration of contra-doping agent in semiconductor and/or increasing or reducing partly The concentration of main dopant in conductor.Therefore, the percentage of the dopant in the semiconductor of contra-doping agent can be used as by changing To adjust starting voltage.It can be made in the first semiconductor 12 and/or the second semiconductor 14 and these of concentration of dopant are changed Become.In some cases, starting voltage is adjusted to be more than 0.3V, 0.5V or 0.8V and/or to be less than 3V, 2V or 1V.It can lead to It crosses and changes the hetero-junctions distribution of one or more of contra-doping knot contra-doping semiconductor to adjust starting voltage.To hetero-junctions point The example of the change of cloth includes increasing or reducing conduction band offset and/or valence band offset.Therefore, can by change semiconductor group at To adjust starting voltage.These for forming semiconductor can be made in the first semiconductor 12 and/or the second semiconductor 14 to change Become.In some cases, starting voltage is adjusted to be more than 0.3V, 0.5V or 0.8V and/or to be less than 3V, 2V or 1V.

The starting voltage of reduction associated with the phonon auxiliary mechanism in heterojunction photodiode can provide higher The photodiode of effect.Fig. 3 A diagrams include an example of the photodiode of the contra-doping knot on substrate 20.Fig. 3 A are packets It includes according to Fig. 1 D until the cross section of the photodiode of the contra-doping p-i-n hetero-junctions of any of Fig. 1 F.Contra-doping P-i-n hetero-junctions is between electric contact piece 18 and can be with 18 direct physical contact of electric contact piece.The electric contact piece 18 can To be electric conductor（Such as metal）And it is preferably doped so as to conductive semiconductor.For example, the electric contact piece 18 can be with It is to degenerate（degeneratively）Doped semiconductor.When electric contact piece 18 is retrograde dopant semiconductor, which can be with It is identical as being included in contra-doping p-i-n hetero-junctions and contacting the semiconductor of electric contact piece 18.For example, positioned at substrate 20 and the Electric contact piece 18 between semiconductor 12 can be identical semiconductor.Be suitble to substrate 20 include but not limited to Si, Ge and SiGe relaxed buffer layers.

Electrical insulator 22 is located on contra-doping knot and electric contact piece 18.Suitable electrical insulator 22 includes but not limited to： SiO₂、Si₃N₄And HfO₂.Terminal 24 extends through insulator 22 and is contacted with one in electric contact piece 18.Suitable electricity connects Contact element 18 includes but not limited to silicide（Such as NiSi or PtSi）And metal（Such as Al or Gu）.The terminal 24 with can be to Contra-doping knot applies the electronic device telecommunication of current potential.For example, when device is operated as photodiode, the electronic device Reverse biased can be applied to contra-doping knot.

First semiconductor 12 and/or the second semiconductor 14 can be by contra-dopings.First semiconductor 12 and/or the second semiconductor The concentration of dopant, main dopant and/or contra-doping agent in 14 can be the function of material.For example, when the first semiconductor 12 Not by contra-doping and when being silicon, the concentration of dopant can be from 2.0E17cm^-3、5.0E20cm^-3, and when the first half For conductor 12 not by contra-doping and when being germanium, the concentration of dopant can be from 1.0E17cm^-3、1.0E20cm^-3.Therefore, The example of the suitable total concentration of dopant or main dopant in semiconductor 12 can be more than 1.0E17cm^-3、1.0E18cm^-3、 Or 1.0E19cm^-3And/or it is less than 2.0E19cm^-3、5.0E19cm^-3Or 1.0E20cm^-3.Dopant in second semiconductor 14 or The concentration of main dopant can be more than 1.0E17cm^-3、1.0E18cm^-3Or 1.0E19cm^-3And/or it is less than 2.0E19cm^-3、 5.0E19cm^-3Or 1.0E-20cm^-3.When the first semiconductor 12 is by contra-doping, contra-doping agent in the first semiconductor 12 it is dense Degree can be more than 1.0E17cm^-3、1.0E18cm^-3Or 1.0E19cm^-3And/or it is less than 2.0E19cm^-3、5.0E19cm^-3Or 1.0E20cm^-3.When the second semiconductor 14 is by contra-doping, the concentration of the contra-doping agent in the first semiconductor 12 can be more than 1.0E17cm^-3、1.0E18cm^-3Or 1.0E19cm^-3And/or it is less than 2.0E19cm^-3、5.0E19cm^-3Or 1.0E20cm^-3.The Three semiconductors 16 can be intrinsic or be lightly doped enough intrinsic to keep being qualified as.

In an example of the photodiode of the constructions of A according to fig. 3, second semiconductor 14 and 16 phase of third semiconductor It is same but different from the first semiconductor 12.For example, the first semiconductor 12 can be SiGeC alloys（Including Si, Ge and C, by Si, Ge It forms with C or is substantially made of Si, Ge and C）, third semiconductor 16 can be silicon and the second semiconductor 14 can be silicon. Additionally or in the alternative, which may include the first semiconductor of N-shaped 12, the second semiconductor of p-type 14 and intrinsic third half Conductor 16.

When the first semiconductor 12 is contra-doping n-type semiconductor, which is contra-doping p-type semiconductor, and Third semiconductor 16 is intrinsic semiconductor, and the second semiconductor 14 it is identical as third semiconductor 16 but with the first semiconductor 12 not Simultaneously；It can choose the first semiconductor 12, the second semiconductor 14 and third semiconductor 16 and such as be shown in figure 3b to provide Opposite conduction band and valence band.The energy band diagram of such as Fig. 3 B usually shows donor state and acceptor state, be to one in semiconductor or Multiple products for carrying out contra-doping.The energy band of Fig. 3 B is illustrated with relative to the notable lower of semiconductor 16（With thermal energy KT phases Than）Conduction band edge（Negative Δ Ec）With the negligibly higher relative to semiconductor 16（Compared with thermal energy KT）Valence band（Positive Δ Ev）Semiconductor 12.As an example, the energy band diagram of B according to fig. 3 can be generated using following items：First semiconductor 12, it is strain（strain）To the contra-doping N-shaped Si of silicon_1-yC_yAlloy（Y is more than 0 and is less than or equal to 0.25 herein） With the Si of strain to silicon_1-x-yGe_xC_yAlloy（X is more than 0 and is more than 0 less than or equal to 1 and y and is less than or equal to herein 0.25）；Second semiconductor 14 is contra-doping p-type Si；Third semiconductor 16 is intrinsic silicon；Electrical contact member 18 is retrograde dopant Silicon；Lower electric contact piece 18 is strained to the retrograde dopant p-type Si of silicon_1-yC_yAlloy（Y is more than 0 and is less than or equal to herein 0.25）With the Si of strain to silicon_1-x-yGe_xC_yAlloy（X is more than 0 and is more than 0 less than or equal to 1 and y and is less than or waits herein In 0.25）；And substrate 20 is p-type silicon.

In another example of the photodiode of the constructions of A according to fig. 3, the first semiconductor 12 is identical as third semiconductor 16 But it is different from the second semiconductor 14.For example, the first semiconductor 12 can be silicon, third semiconductor 16 can be silicon and the second half Conductor can be SiGeC alloys.Additionally or in the alternative, which may include the first semiconductor of N-shaped 12, p-type second Semiconductor 14 and intrinsic third semiconductor 16.

When the first semiconductor 12 is contra-doping n-type semiconductor, the second semiconductor 14 is contra-doping p-type semiconductor, and the Three semiconductors 16 are intrinsic semiconductors, and the second semiconductor 14 is identical as third semiconductor 16 but different with the first semiconductor 12 When；The first semiconductor 12, the second semiconductor 14 and third semiconductor 16 can be chosen to provide the phase such as shown in figure 3b To conduction band and valence band.The energy band diagram of such as Fig. 3 B usually shows donor state and acceptor state, is to one or more in semiconductor A product for carrying out contra-doping.The energy band of Fig. 3 B is illustrated with relative to the notable lower of semiconductor 16（Compared with thermal energy KT） Conduction band edge（Negative Δ Ec）With the negligibly higher relative to semiconductor 16（Compared with thermal energy KT）Valence band（Positive Δ Ev） Semiconductor 12.As an example, the energy band diagram of B according to fig. 3 can be generated using the following terms：First semiconductor 12, It is strained to the contra-doping N-shaped Si of silicon_1-yC_yAlloy（Y is more than 0 and is less than or equal to 0.25 herein）With strain to silicon Si_1-x-yGe_xC_yAlloy（X is more than 0 and is more than 0 less than or equal to 1 and y and is less than or equal to 0.25 herein）；The second half lead Body 14 is contra-doping p-type Si；Third semiconductor 16 is intrinsic silicon；Electrical contact member 18 is retrograde dopant silicon；Lower electric contact piece 18 It is to strain to the retrograde dopant p-type Si of silicon_1-yC_yAlloy（Y is more than 0 and is less than or equal to 0.25 herein）With strain to silicon Si_1-x-yGe_xC_yAlloy（X is more than 0 and is more than 0 less than or equal to 1 and y and is less than or equal to 0.25 herein）；And substrate 20 be p-type silicon.

When the first semiconductor 12 is contra-doping n-type semiconductor, the second semiconductor 14 is contra-doping p-type semiconductor, and the When three semiconductors 16 are intrinsic semiconductors；The first semiconductor 12, the second semiconductor 14 and third semiconductor 16 can be chosen to carry For the opposite conduction band and valence band such as shown in fig. 3d.The energy band of Fig. 3 D illustrate with relative to semiconductor 16 significantly more It is low（Compared with thermal energy KT）Conduction band edge（Negative Δ Ec）With the negligibly higher relative to semiconductor 16（With thermal energy KT phases Than）Valence band（Positive Δ Ev）Semiconductor 12, and with the notable higher relative to semiconductor 16（Compared with thermal energy KT）Valence Belt edge（Positive Δ Ev）With relative to the negligibly lower of semiconductor 16（Compared with thermal energy KT）Conduction band（Negative Δ Ec）'s Semiconductor 14.As an example, when the first semiconductor 12 is strained to the contra-doping N-shaped Si of silicon_1-yC_yAlloy（Y is big herein In 0 and be less than or equal to 0.25）With the Si of strain to silicon_1-x-yGe_xC_yAlloy（X is more than 0 and is less than or equal to 1 simultaneously herein And y is more than 0 and is less than or equal to 0.25）, the second semiconductor 14 is strained to the Si of silicon_1-xGe_xAlloy（X is more than or waits herein In 0 and/or be less than or equal to 1）And it strains to the Si of silicon_1-x-yGe_xC_yAlloy（Herein x be more than 0 and less than or equal to 1 and Y is more than 0 and is less than or equal to 0.25）And it strains to the Si of silicon_1-x-yGe_xC_yAlloy（X is more than 0 and is less than or equal to 1 herein And y is more than 0 and is less than or equal to 0.25）, third semiconductor 16 is intrinsic silicon, and electrical contact member 18 is strained to the degeneration of silicon Doped p type Si_1-x-yGe_xC_yAlloy（X is more than 0 and is more than 0 less than or equal to 1 and y and is less than or equal to 0.25 herein）, under Electric contact piece 18 is strained to the retrograde dopant N-shaped Si of silicon_1-yC_yAlloy（Y is more than 0 and is less than or equal to 0.25 herein）And Si_1-x-yGe_xC_y（X is more than 0 and is more than 0 less than or equal to 1 and y and is less than or equal to 0.25 herein）, and substrate 20 is p When type silicon, the energy band diagram of D according to fig. 3 can be generated.

Photodiode may include contra-doping pn-junction.For example, Fig. 3 E be include according to Figure 1A until Fig. 1 C in appoint The cross section of the photodiode of one contra-doping pn hetero-junctions.Contra-doping pn hetero-junctions between electric contact piece 18 simultaneously And it can be with 18 direct physical contact of electric contact piece.The electric contact piece 18 can be electric conductor（Such as metal）And preferably It is doped so as to conductive semiconductor.For example, the electric contact piece 18 can be retrograde dopant semiconductor.When electric contact piece 18 is to move back When changing doped semiconductor, which can be with the semiconductor that is included in contra-doping pn hetero-junctions and contacts electric contact piece 18 It is identical.For example, the electric contact piece 18 between substrate 20 and the first semiconductor 12 can be identical semiconductor.It is suitble to substrate 20 include but not limited to Si, Ge and SiGe relaxed buffer layers.

Electrical insulator 22 is located on contra-doping knot and electric contact piece 18.Suitable electrical insulator 22 includes but not limited to： SiO₂、Si₃N₄And HfO₂.Terminal 24 extends through insulator 22 and is contacted with one in electric contact piece 18.Suitable electricity connects Contact element 18 includes but not limited to silicide（Such as NiSi, PtSi）And metal（Such as Al or Gu）.Terminal 24 with can be mixed to counter Miscellaneous knot applies the electronic device telecommunication of current potential.For example, when device is operated as photodiode, which can be with Apply reverse biased to contra-doping knot.

First semiconductor 12 and/or the second semiconductor 14 can be by contra-dopings.Dopant in first semiconductor 12 or master The concentration of dopant can be more than the density of states of semiconductor.The density of states in conduction band and valence band is usually different.Therefore, It is N-shaped or p-type that the concentration of dopant or main dopant, which also depends on it,.Because the density of states of semiconductor is for semiconductor Material is specific, so the concentration of the first semiconductor 12 and/or dopant or main dopant in the second semiconductor 14 can be with It is material selection and dopant type（P or n）Function.The suitable concentration of dopant or main dopant in second semiconductor 14 Example be more than 1.0E18cm^-3、1.0E19cm^-3Or 1.0E20cm^-3And/or it is less than 2.0E20cm^-3、5.0E20cm^-3Or 5.0E20cm^-3.When the first semiconductor 12 is by contra-doping, the example of the concentration of the contra-doping agent in the first semiconductor 12 includes big Total concentration of dopant in the first semiconductor 12 0.1% or 25% and/or less than total concentration of dopant 50% concentration. When the second semiconductor 14 is by contra-doping, the example of the concentration of the contra-doping agent in the first semiconductor 12 includes being more than the first half to lead Total concentration of dopant in body 12 0.1% or 25% and/or less than total concentration of dopant 50% concentration.

Second semiconductor 14 is different from the first semiconductor 12.For example, the first semiconductor 12 can be strained to silicon Si_1-yC_yAlloy（Y is more than 0 and is less than or equal to 0.25 herein）With the Si of strain to silicon_1-x-yGe_xC_yAlloy（X is big herein In 0 and less than or equal to 1 and y be more than 0 and be less than or equal to 0.25）, and the second semiconductor 14 can be strained to silicon Si_1-x-yGe_xC_yAlloy（X is more than 0 and is more than 0 less than or equal to 1 and y and is less than or equal to 0.25 herein）, the Si_1-x- _yGe_xC_yAlloy and with the Si that is included in the first semiconductor 12_1-x-yGe_xC_yThe different composition of alloy.Additionally or alternatively Ground, the photodiode may include the first semiconductor of N-shaped 12 and the second semiconductor of p-type 14.

When the first semiconductor 12 is contra-doping n-type semiconductor, and the second semiconductor 14 is contra-doping p-type semiconductor；It can be with The first semiconductor 12 and the second semiconductor 14 are chosen to provide such as opposite conduction band and valence band shown in Fig. 3 F.Particularly, First semiconductor 12 has relative to the notable lower of the second semiconductor 14（Compared with thermal energy KT）Conduction band edge（Negative Δ Ec）, And the second semiconductor 14 has the notable higher relative to semiconductor 12（Compared with thermal energy KT）Valence band edge（Positive Δ Ev）. As an example, the energy band diagram of F according to fig. 3 can be generated using the following terms：First semiconductor 12 is strained to silicon Contra-doping N-shaped Si_1-yC_yAlloy（Y is more than 0 and is less than or equal to 0.25 herein）With the Si of strain to silicon_1-x-yGe_xC_yIt closes Gold（X is more than 0 and is more than 0 less than or equal to 1 and y and is less than or equal to 0.25 herein）；Second semiconductor 14 be have with The strain of the first different composition of semiconductor 12 to silicon contra-doping p-type Si_1-x-yGe_xC_yAlloy（X is more than 0 and is less than herein Or it is more than 0 equal to 1 and y and is less than or equal to 0.25）；Third semiconductor 16 is intrinsic silicon；Electrical contact member 18 be strain to The retrograde dopant Si of silicon_1-yC_yAlloy（Y is more than 0 and is less than or equal to 0.25 herein）And Si_1-x-yGe_xC_y（X is more than herein 0 and less than or equal to 1 and y be more than 0 and be less than or equal to 0.25）；Lower electric contact piece 18 is strained to the retrograde dopant of silicon Si_1-xGe_xAlloy（X is greater than or equal to 0 and/or less than or equal to 1 herein）With the Si of strain to silicon_1-x-yGe_xC_yAlloy（At this In x be more than 0 and less than or equal to 1 and y be more than 0 and be less than or equal to 0.25）；And substrate 20 is p-type silicon.

If one or more of the material being included in contra-doping knot is light absorbing medium, Fig. 3 A are until Fig. 3 F Photodiode can have improved properties.For example, the light absorbing medium can be direct band gap material.In certain situations Under, which is direct band gap material and compatible with silicon epitaxy.As an example, the third semiconductor in Fig. 3 A 16 can be direct band gap material.The suitable direct band gap material compatible with silicon epitaxy includes but not limited to superlattices（It includes It one or more components for being selected from the group being made of Si, Ge, C, Sn, Pb and is strained to silicon face, can be had It is different from（100）The crystalline orientation in face）, alloy and/or superlattices（It includes being selected from the group being made of Si, Ge, C, Sn, Pb One or more components for selecting are grouped as by the one or more group, and are strained to silicon face, can be had not It is same as（100）The crystalline orientation in face）, alloy and/or superlattices（It includes being selected from the group being made of Si, Ge, C, Sn, Pb One or more components and strained to silicon face, can have be different from（100）The crystalline orientation in face）.It is preferred that straight Tape splicing gap material is superlattices, entitled " the Superlattice Materials and such as submitted on October 25th, 2013 In Applications " and U.S. Patent Application Serial Number 61/895,971 in being hereby incorporated by reference in its entirety and also 2014 Entitled " Superlattice Materials and Applications " that on September is submitted for 23 and this is integrally incorporated with it Superlattices disclosed in PCT Patent Application PCT/US2014/057066, publication number WO 2105042610 in text.

The light absorbing medium need not be included in contra-doping knot to improve the efficiency of photodiode.For example, should Light absorbing medium can contact the one or more materials being included in contra-doping knot.For example, the light absorbing medium can be anti- Adulterate knot outside but in photodiode above the first semiconductor 12 and/or the second semiconductor 14 be physically contacted. Fig. 3 G provide wherein light absorbing medium 28 and are located at the photodiode being in direct contact outside contra-doping knot but with contra-doping knot One example.E inhales between the second semiconductor 14 and electric contact piece 18 including light the photodiode to construct according to fig. 3 Receive medium 28.14 direct physical contact of the light absorbing medium 28 and the second semiconductor.

Fig. 3 A can have epitaxial growth extremely until photodiode disclosed in Fig. 3 G is mesa diode A few semiconductor.Therefore, leakage current related with edge can be the relative contribution to total leakage current of diode.It can With by Fig. 3 A until pinning surface fermi level makes around the table top outer surface of photodiode disclosed in Fig. 3 G Leakage related with edge strongly reduces.For example, having for A is located at contra-doping knot and optional electrical isolation to Fig. 3 H diagrams according to fig. 3 The photodiode of pinning layer between body 22.The pinning layer contacts the first semiconductor 12, the second semiconductor 14, third semiconductor 16 and electric contact piece 18 edge.As another example, G has positioned at contra-doping knot and optional according to fig. 3 for Fig. 3 I diagrams The photodiode of pinning layer 30 between electrical insulator 22.The pinning layer contacts the first semiconductor 12, the second semiconductor 14, the The edge of three semiconductors 16 and light absorbing medium 28.The doping of the pinning layer 30 can allow pinning layer to provide and light absorption Jie The high-quality electrical contact of matter 28.Therefore, which can serve as and/or substitute electric contact piece 18.

Suitable pinning layer is conductive and including but not limited to doped semiconductor.The pinning layer can be doped with Two semiconductors, 14 identical polarity.For example, when second semiconductor 14 is doped to become p-type semiconductor, the pinning layer It can be doped to become p-type pinning layer.The concentration of dopant in the pinning layer can be more than in the second semiconductor 14 The concentration of dopant.In some cases, which is retrograde dopant.Suitable material for pinning layer includes but unlimited In Si, Ge, Si_1-xGe_xUnordered or ordered alloy（X is greater than or equal to 0 and/or less than or equal to 1 herein）、Si_1-yGe_y（ Here y is more than 0 and is less than or equal to 0.25）And Si_1-x-yGe_xC_y（X is more than 0 and is more than less than or equal to 1 and y herein 0 and be less than or equal to 0.25）.

Although photodiode it is disclosed in the context that in Fig. 3 A until device disclosed in the context of Fig. 3 I, But each in device above can be operated as diode.

In Fig. 3 A until device disclosed in the context of Fig. 3 I is depicted as individual devices.However, with other devices （Such as cmos device）Collection realizes integrated circuit in pairs（IC）Manufacture and realization make it possible the performances of certain functionality Level is vital.Fig. 4 A are the photoelectrons for the photodiode for including the source electrode or drain electrode for being electrically connected to NMOS transistor The cross section of device.Photoelectricity two is used in the application of such as general optical sensor, cmos image sensor and optical transceiver This of pole pipe and transistor arrangement.

For example, Fig. 4 A are the photoelectricity for including the source electrode for being electrically connected to NMOS transistor or the photodiode of Fig. 3 H of drain electrode The cross section of sub- device.The device be structured in base region 36, the first area 38, source area 42 and drain region 44 substrate 34 On.Firstth area 38, source area 42 and drain region 44 are the doped regions of substrate 34.The source area 42 and drain region 44 extend to In one area 38.Fleet plough groove isolation structure 46 extends in substrate 34.The base region 36, the first area 38, source area 42 and drain region Each in 44 can be doped to become n-type area or p-type area.In the example shown in fig. 4 a, the base region 36 It is doped to become p-type base region 36, which is doped to become the firstth area of p-type and can serve as p traps, should Source area 42 is doped to become n-type source area 42, and the drain region 44 is doped to become n-type drain area 44.The The concentration of dopant in one area 38 can be more than the concentration of dopant in base region 36.The concentration of dopant in drain region 44 The concentration of dopant that can be more than in source area 42, the concentration of dopant that can be more than in the first area 38.In drain region 44 Concentration of dopant can be sufficient to make drain region 44 that semiconductor is made to degenerate.Suitable material for substrate 34 includes but not limited to： Silicon on silicon, insulating thick film body（SOI）, thin film SOI, ultrathin membrane（UTF）Germanium on-SOI, thin-film insulator（GOI or GeOI）And it is super Film（UTF）SiGe on-GOI, thin-film silicon-on-insulator（GOI）And ultrathin membrane（UTF）Sige-on-insulator.For shallow trench The suitable material of isolation structure 46 includes but not limited to dielectric material（Such as silica）.

Insulator 48, grid 50 and gate insulator 52 are located on substrate 34.The gate insulator 52 is located at 34 He of substrate Between grid 50.Contra-doping knot is between source area 42 and pinning layer 30.Particularly, the first semiconductor 12, third semiconductor 16 and second semiconductor 14 between pinning layer 30 and substrate 34.The pinning layer 30 can be led with the first semiconductor 12, the second half It is physically contacted at the edge of body 14 and third semiconductor 16.The pinning layer 30 and source area 42 can surround contra-doping knot.For example, should Pinning layer 30 and source area 42 can surround the first semiconductor 12, the second semiconductor 14 and third semiconductor 16.

The pinning layer 30 is doped with polarity identical with the second semiconductor 14.For example, when the first area 38 be doped so as to When as the firstth area 38 of p-type, pinning layer 30 is doped to become p-type pinning layer 30.The concentration of dopant in pinning layer 30 Can be more than the concentration of the dopant in the second semiconductor 14.In some cases, which is retrograde dopant.

Electric contact piece 60 and 44 direct physical contact of pinning layer 30, grid 50 and drain region.For the suitable of electric contact piece 60 Condensation material includes but not limited to silicide（Such as nickel silicide）.Electric conductor 64 extends to electric contact piece 60 by insulator 22. Electronic device（It is not shown）It can be with 64 telecommunication of electric conductor.Therefore, which can apply electricity to electric conductor 64 It can be so as to operated device.

During the operation of the device, source area 42 plays the work of the lower electric contact piece of the photodiode illustrated in Fig. 3 H With, and pinning layer 30 plays the electrical contact member of the photodiode illustrated in Fig. 3 H.Correspondingly, source area 42 and nail Prick the anode and cathode that layer 30 plays photodiode.Electronic device applies electric energy to be formed across photoelectricity to electric conductor 64 The reverse biased of diode.The electronic device can control the current potential of pinning layer 30 or pinning layer 30 and can be grounded.In response to The third semiconductor 16 that light is as light absorbing medium absorbs, and electric current flowing passes through photodiode.

The source area 42, drain region 44 and grid 50 are respectively served as the source electrode of transistor, drain and gate.Further, Firstth area 38 is doped the raceway groove that transistor is served as near the part of gate insulator 52 so that the first area 38.Example Such as, which may include that the first area 38 is allowed to serve as retroversion trap（retrograde well）Concentration of dopant in Gradient.The electronic device can switch on and off transistor so that photodiode is in different mode as described above Operation.

The source area 42 can be separated with the electric contact piece of photodiode.For example, Fig. 4 B are to include being electrically connected to NMOS The cross section of the opto-electronic device of the photodiode of the source electrode of transistor or Fig. 3 H of drain electrode.The substrate 34 includes being located at photoelectricity Fleet plough groove isolation structure 46 between the source area 42 of diode and lower electric contact piece 18.In addition, the substrate 34 includes and first Area 38, source area 42 and lower electrical contacts the second area 70.Secondth area is doped to become the secondth area of N-shaped and can To serve as n traps.Secondth area is provided below the fleet plough groove isolation structure 46 between source area 42 and lower electric contact piece 18 Conductive path.Therefore, the secondth area provides the telecommunication between source area 42 and lower electric contact piece 18.

Device shown in Fig. 4 A and Fig. 4 B may be modified as making pinning layer 30 and be included in substrate 34 one or Multiple 74 telecommunications of secondary pinning layer.For example, it includes contacting and being located at pinning layer 30 that Fig. 4 C, which illustrate modified therefore substrate 34, The device of Fig. 4 A of secondary pinning layer 74 between first area 38 and fleet plough groove isolation structure 46.The substrate 34 includes and pinning layer 30 Another secondary pinning layer 74 contacted with source area 42.The pinning layer 30, one or more pinning layers 74 and source area 42 can be with Surround contra-doping knot.For example, the pinning layer 30, one or more pinning layers 74 and source area 42 can surround the first semiconductor 12, the second semiconductor 14 and third semiconductor 16.The one or more time pinning layer 74 can be the doped region of substrate 34.When one When a or multiple secondary pinning layers 74 are the doped regions of substrate 34, which can have polarity identical with pinning layer 30.

As another example, the modified therefore substrate 34 of Fig. 4 D diagrams includes and pinning layer 30, fleet plough groove isolation structure 46 and electrical contacts secondary pinning layer 74 Fig. 4 B device.The substrate 34 includes and pinning layer 30, shallow trench isolation knot Another secondary pinning layer 74 that structure 46 and source area 42 contact.The pinning layer 30, one or more pinning layers 74 and electric contact pieces 18 can surround contra-doping knot.For example, the pinning layer 30, one or more pinning layers 74 and electric contact piece 18 can surround the Semiconductor 12, the second semiconductor 14 and third semiconductor 16.The one or more time pinning layer 74 can be mixing for substrate 34 Miscellaneous area.When one or more pinning layers are the doped regions of substrate 34, which can have identical with pinning layer 30 Polarity.

In Fig. 4 C and Fig. 4 D, the pinning layer 30 and one or more 74 telecommunications of pinning layer.Therefore, can pass through to One or more pinning layers 74 apply voltage the voltage of pinning layer 30 and one or more pinning layers 74 is arranged.Accordingly Ground, the electric conductor 64 and electric contact piece 60 that top pinning layer 30 is connected to as shown in Fig. 4 A and Fig. 4 B are not included in Fig. 4 C In the device of Fig. 4 D.In Fig. 4 C and Fig. 4 D, the electric contact piece 60 and electric conductor 64 are optional, and can by with lining Bottom pinning layer 74 contacts the current potential of pinning layer 30 is arranged.

Fig. 4 A until Fig. 4 D device as the result of starting voltage of reduction of contra-doping knot but it is more efficient.With The suitable starting voltage of contra-doping knot in these devices can be less than 3V, 1V or 0.5V and/or more than 0.1V, 0.2V or 0.3V。

The integration realization of photodiode and cmos device as shown in Figure 4 A integrated circuit（IC）Manufacture with And make it possible the performance levels of certain functionality.For example, cmos image sensor（CIS）In photodiode with Being closely integrated for MOSFET keeps parasitic capacitance sufficiently low to allow charge to the high conversion efficiency of voltage.In two pole of no photoelectricity This of pipe and MOSFET are extremely tight（Monolithic）In the case of integrated, the performance of CIS will be significantly lower.Therefore, CIS is for illustrating Therefore, CIS is for illustrating CEP-SAM-PPD to the integrated good example case of CEP-SAM-PPD（Recycle excitation process- Individually absorption and multiplication pinned photodiode）The integrated good example case of device and conventional CMOS devices.Device with Conventional CMOS devices.

Although Fig. 4 A can use Fig. 3 A until Fig. 3 G up to the photodiode that the device of Fig. 4 D includes Fig. 3 H Photodiode and/or contra-doping knot come replace Fig. 3 A until Fig. 3 G photodiode and/or contra-doping knot in appoint One.

The use of contra-doping knot can also provide increased amplification electric current to the transistor of such as tunnel transistor.Fig. 5 A are Include according to the contra-doping p-i-n in Fig. 1 D any of contra-doping p-i-n hetero-junctions constructions disclosed in Fig. 1 F The schematic diagram of the tunnel MOSFET of hetero-junctions.Contra-doping p-i-n hetero-junctions is between electric contact piece and can be connect with electricity Contact element direct physical contact.The electric contact piece can be electric conductor（Such as metal）And it is preferably doped so as to conduction Semiconductor.For example, the electric contact piece can be retrograde dopant semiconductor.It, should be partly when electric contact piece is retrograde dopant semiconductor Conductor can be identical as being included in contra-doping p-i-n hetero-junctions and contacting the semiconductor of electric contact piece.

The contra-doping knot includes third semiconductor 16, the first semiconductor 12 and the second semiconductor 14, they, which are arranged to, makes The charge during the operation of transistor is obtained to flow between the first semiconductor 12 and the second semiconductor 14 by third semiconductor 16. The third semiconductor 16 is between the first semiconductor 12 and the second semiconductor 14.The third semiconductor 16 can be led with the first half Both body 12 and the second semiconductor 14 direct physical contact.First semiconductor 12 can be source electrode, and the second semiconductor 14 can be Drain electrode, and third semiconductor 16 can be raceway groove.First semiconductor 12 is doped to become n-type semiconductor or contra-doping n Type semiconductor and/or second semiconductor 14 are doped to become p-type semiconductor or contra-doping p-type semiconductor, wherein at least First semiconductor 12 or the second semiconductor 14 are by contra-doping.The third semiconductor 16 can be intrinsic.The contra-doping knot can be with It is hetero-junctions.Therefore, what is selected from the group being made of the first semiconductor 12, the second semiconductor 14 and third semiconductor 16 partly leads Only two in body can be identical.When the first semiconductor 12, the second semiconductor 14 and third semiconductor 16 different from each other, Fig. 5 B may be implemented until the energy band of Figure 10 F is aligned.

Gate insulator 82 is between gate electrode 86 and third semiconductor 16.The gate insulator 82 can be with optional Ground is between the first semiconductor 12 and gate electrode 86 and/or between gate electrode 86 and the second semiconductor 14.In certain feelings Under condition, the gate insulator 82, gate electrode 86 and third semiconductor 16 are arranged or the gate insulator 82 with sandwich Third semiconductor 16 is surrounded with gate electrode 86.Suitable material for gate insulator 82 includes but not limited to dielectric material, Such as silica, silicon-nitrogen oxides, high-K metal oxide and metal oxynitride material（Such as hafnium-oxide, Al- aoxidize Object）And metal alloy oxide（Such as HfAl- oxides and HfAlZr- oxides）.Suitable material for gate electrode 86 Including but not limited to conductive material（Such as highly doped polysilicon）, metal（Such as Al, Cu etc.）, can be with gate insulator It directly engages, or 86 centre of gate oxide and gate electrode can be deposited at（It is one or more）Barrier metal On.“（It is one or more）Barrier metal "（Such as TiN, TiSiN, TaN, WN and other）, in addition to providing physical chemistry barrier Except chance to reduce the chemical reaction between metal gate electrode 86 and gate insulator 82, design work content can be also used for Number influences the threshold voltage of tunnel transistor strongly（VT）.

The concentration of dopant or main dopant in first semiconductor 12 can be more than 2.0E19cm^-3、5.0E19cm^-3Or 2.0E20cm^-3And/or it is less than 5.0E20cm^-3、1.0E21cm^-3Or 2.0E20cm^-3.Dopant in second semiconductor 14 or The concentration of main dopant can be more than 2.0E19cm^-3、5.0E19cm^-3Or 2.0E20cm^-3And/or it is less than 5.0E20cm^-3、 1.0E21cm^-3Or 2.0E20cm^-3.When the first semiconductor 12 is by contra-doping, contra-doping agent in the first semiconductor 12 it is dense Degree can be more than 1.0E19cm^-3、2.5.0E19cm^-3Or 1.0E20cm^-3And/or it is less than 5.0E20cm^-3、1.0E21cm^-3Or 2.0E20cm^-3.When second semiconductor 14 is by contra-doping, the concentration of the contra-doping agent in the first semiconductor 12 can be more than 1.0E19cm^-3、2.5.0E19cm^-3Or 1.0E20cm^-3And/or it is less than 5.0E20cm^-3、1.0E21cm^-3Or 2.0E20cm^-3。 The third semiconductor 16 can be intrinsic.

Terminal 24 and each telecommunication in electric contact piece.For example, different terminals 24 can in electric contact piece Each direct physical contact.Suitable terminal 24 includes but not limited to silicide（Such as NiSi or PtSi）And metal（Such as Al or Gu）.The terminal 24 and the electronic device telecommunication that current potential can be applied to contra-doping knot.Electronic device（It is not shown） Can with each telecommunication in terminal 24 and may be configured to terminal 24 apply electric energy with convenient to operate transistor. In some cases, the starting voltage of contra-doping knot is adjusted to be more than 0V, 0.1V or 0.2V and/or to be less than 0.5V, 1V or 3V.

Tunnel transistor is usually associated with low-down off state current.Although low off state current is desired, these Identical device is also associated with undesirably low on state current.For example, the on state current of tunnel transistor is generally than routine Lower two to three orders of magnitude of on state current of thermoelectron MOSFET.The starting voltage of reduction associated with contra-doping knot can be with Increase the on state current of tunnel transistor.For example, existing tunnel transistor is not grasped usually under the operation voltage less than 0.2V Make；However, the starting voltage reduced allows transistor less than being operated under 0.2V.The operation voltage can be the voltage of power supply simultaneously And through being often specified to VDD.The all functionalities of transistor are all occurred with the voltage equal to or less than operation voltage.For tunnel MOSFET, can be by adjusting many parameters（Such as source electrode to raceway groove tunnel knot design）To drop low operating voltage.Herein Hetero-junctions realizes the barrier height for reducing and being used for tunnelling, this realizes the notable tunnelling institute necessity for reducing and causing through the potential barrier in turn Voltage.This is the example for the advantages of how hetero-junctions generates better than the homojunction for being less than 0.2V；However, the starting voltage reduced Allow transistor less than being operated under 0.2V.It can be by designing hetero-junctions tunneling barrier, Yi Jitong between source electrode and raceway groove Cross control tunnel barrier thickness（Function as the voltage for being applied to grid）Gate insulator and electrode adjust transistor Operation voltage.

Drop low operating voltage possibly also with tunnel MOSFET is by by making tunnelling via the voltage for being applied to grid Caused by the thinning ability for injecting raceway groove and the tunneling probability of drain electrode to adjust carrier from source electrode of potential barrier.Because potential barrier thickness Linear change causes the exponential transform of tunneling probability, is flowed to from source electrode so then carrying out module possible with fairly small voltage Big variation in the electric current of drain electrode.Another key factor for dropping low operating voltage is the drop of the barrier height of inter-band tunneling It is low.Hetero-junctions can reduce the barrier height relative to homojunction.In homojunction, tunneling barrier height be for source electrode and The band gap of the material of channel region.In hetero-junctions, the tunneling barrier height from source electrode to drain electrode depends on source electrode and channel material Between energy bandmatch or alignment.For example, for the NMOS device with p-type doped source pole and N-shaped doped-drain, by raceway groove Difference between conduction band edge and the valence band edge of source electrode provides the barrier height of the charge injection from source electrode to raceway groove.Anti- mistake Come, for the PMOS with n-shaped doped source pole and p-type doped-drain, by the conduction band edge of the valence band edge and source electrode of raceway groove Difference come provide from source electrode to raceway groove charge injection barrier height.Furthermore it is possible to along the path policy from source electrode to drain electrode Property place energy bandmatch, so as to when carrier pass through hetero-junctions when give kinetic energy to electric charge carrier.It is thereby possible to select the Semiconductor 12, the second semiconductor 14 and third semiconductor 16 and associated doped level provide energy bandmatch, permit Perhaps electric charge carrier also obtains kinetic energy other than the kinetic energy obtained from the electric field applied from across interface.It is passed through from interface Increased kinetic energy can be enough to compensate by reducing applied electric energy（The result of operation voltage as reduction）Caused by Any loss in kinetic energy.

When electronics passes through interface from the second semiconductor 14 to third semiconductor 16 and again when from third semiconductor 16 When passing through interface to the first semiconductor 12, material selection and doping can make conduction band energy decline or keep constant.In addition Or alternatively, when passing through interface from the first semiconductor 12 to third semiconductor 16 when hole and again when from third semiconductor 16 When passing through interface to the second semiconductor 14, the energy of valence band is reduced or is kept constant.For example, when electronic device is not to transistor When applying electric energy, material selection and doping can be selected to provide the energy band diagram according to Fig. 5 B.Fig. 5 C are in material interface and expense The truer version of valence band and conduction band in the case of the influence significantly of rice energy level shown in Fig. 5 B.It is moved when from the second semiconductor 14 Energy to conduction band when the first semiconductor 12 is reduced in each interface, and is led when be moved to the second half from the first semiconductor 12 The energy of valence band increases in each interface when body 14.

Fig. 5 A are until the transistor of Fig. 5 C can play PMOS and/or NMOS only in accordance with the voltage applied.

Fig. 5 D are until Fig. 5 G are shown during the operation of transistor for Fig. 5 A until the tunnel transistor of Fig. 5 C Qualitative energy band alignment.For example, Fig. 5 D show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition （Drain voltage subtracts source voltage）>0 and VGS（Gate voltage minus source voltage）>0, or for T-PMOS, VDS< 0 and VGS=0.The energy band of Fig. 5 E illustrates the energy band alignment for bias condition, for T-NMOS under the bias condition, VDS=0 and VGS>0, or for T-PMOS, VDS=0 and VGS=0.The energy band of Fig. 5 F is illustrated for bias condition Energy band is aligned, for T-NMOS, VDS under the bias condition>0 and VGS=0, or for T-PMOS, VDS<0 and VGS < 0.The energy band of Fig. 5 G illustrate the energy band alignment for bias condition, for T-NMOS under the bias condition, VDS=0 and VGS=0, or for T-PMOS, VDS=0 and VGS< 0.

It is also an option that the material and doping in the transistor of Fig. 5 A from the second semiconductor 14 so that when being moved to first The energy level of third semiconductor 16 reduces when semiconductor 12.For example, it is also possible to select material and doping to provide according to Fig. 6 A and figure The energy band diagram of 6B.Fig. 6 A indicate the energy band diagram when electronic device does not apply electric energy to transistor.Fig. 6 B are in material interface With the truer version of valence band and conduction band of the influence of fermi level in the case of apparent shown in Fig. 6 A.When from the second semiconductor 14 The energy level of the conduction band of third semiconductor 16 and valence band is reduced when being moved to the first semiconductor 12.However, being led when from the second half The energy of conduction band is reduced in each interface when body 14 is moved to the first semiconductor 12, and is worked as and be moved to from the first semiconductor 12 The energy of valence band increases in each interface when the second semiconductor 14.It can be by the way that two different semi-conducting materials be incorporated in Come together to cause the reduction of the energy of the valence band and conduction band for third semiconductor 16, two different semi-conducting materials smart Really combine to realize the effect.It may be advantageous for the reduction because when electric charge carrier pass through hetero-junctions when potential energy reduction It can be converted into the kinetic energy of electric charge carrier, and enough energy can be obtained then phonon to be caused to assist impurity scattering Event causes electric charge carrier to double（Current gain i.e. at low voltage）.

Fig. 6 C are until Fig. 6 F show the qualitative of the tunnel transistor for being directed to Fig. 6 A and Fig. 6 B during the operation of transistor Energy band is aligned.For example, Fig. 6 C show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition（Leakage Pole tension subtracts source voltage）>0 and VGS（Gate voltage minus source voltage）>0, or for T-PMOS, VDS< 0 And VGS=0.The energy band of Fig. 6 D illustrates the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition =0 and VGS>0, or for T-PMOS, VDS=0 and VGS=0.The energy band of Fig. 6 E illustrates the energy band for bias condition Alignment, for T-NMOS, VDS under the bias condition>0 and VGS>0, or for T-PMOS, VDS<0 and VGS=0. The energy band of Fig. 6 F illustrate the energy band alignment for bias condition, for T-NMOS under the bias condition, VDS=0 and VGS= 0, or for T-PMOS, VDS=0 and VGS< 0.

In some cases, the third semiconductor 16 in the transistor of Fig. 5 A includes more than one material layer.For example, may be used also The energy band diagram according to Fig. 7 A and Fig. 7 B is provided to select material and doping.Fig. 7 A indicate not apply to transistor when electronic device Energy band diagram when power-up energy.Fig. 7 B be in the case that shown in the apparent Fig. 7 A of influence of material interface and fermi level valence band and The truer version of conduction band.Third semiconductor 16 includes first part and second part.The first part is in second part and Between two semiconductors 14 and the second part is between first part and the first semiconductor 12.

The first part can be constructed by the material different from second part.Such as from Fig. 7 A and Fig. 7 B it will be evident that choosing Material and doping are selected so that the energy of conduction band is in each interface when being moved to the first semiconductor 12 from the second semiconductor 14 It reduces, and the energy of valence band increases in each interface when being moved to the second semiconductor 14 from the first semiconductor 12.By more A different layer can be advantageous to construct third semiconductor 16, because having with suitable on the path from source electrode to drain electrode The multiple hetero-junctions offer for closing energy band alignment provides additional kinetic energy in the case where that need not apply high voltage to electric charge carrier It may.Generation cycle excitation process is realized in the kinetic energy increase for increasing carrier（CEP）Scattering process possibility.

Fig. 7 C are until Fig. 7 F show the qualitative of the tunnel transistor for being directed to Fig. 7 A and Fig. 7 B during the operation of transistor Energy band is aligned.For example, Fig. 7 C show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition（Leakage Pole tension subtracts source voltage）>0 and VGS（Gate voltage minus source voltage）>0, or for T-PMOS, VDS<0 and VGS = 0.The energy band of Fig. 7 D illustrates the energy band alignment for bias condition, for T-NMOS under the bias condition, VDS= 0 and VGS>0, or for T-PMOS, VDS=0 and VGS=0.The energy band of Fig. 7 E illustrates the energy band pair for bias condition Standard, for T-NMOS, VDS under the bias condition>0 and VGS=0, or for T-PMOS, VDS<0 and VGS< 0.Figure The energy band of 7F illustrates the energy band alignment for bias condition, for T-NMOS, VDS=0 and VGS=0 under the bias condition, Or for T-PMOS, VDS=0 and VGS< 0.

First part and/or second part can be constructed such that valence band and/or the modified energy level of conduction band.Example Such as, it is also an option that material and doping provide the energy band diagram according to Fig. 8 A and Fig. 8 B.Fig. 8 A indicate when electronic device not to Transistor applies energy band diagram when electric energy.Fig. 8 B are shown in the apparent Fig. 8 A of influence of material interface and fermi level Valence band and conduction band truer version.Such as from Fig. 8 A it will be evident that the valence band of first part is in the first semiconductor 12 and the second half It is continuously reduced between conductor 14.The conduction band of second part continuously reduces between the first semiconductor 12 and the second semiconductor 14.When It reduces or keeps constant in the energy of each interface conduction band when being moved to the first semiconductor 12 from the second semiconductor 14, and work as Increase or keep constant in the energy of each interface valence band when being moved to the second semiconductor 14 from the first semiconductor 12.It can lead to The wise selection of multiple materials of the different piece for device is crossed to lead to the valence band for first part and/or second part And/or the reduction of the energy of conduction band.It may be advantageous for these reductions, because it is provided in the case where that need not apply high voltage The possibility of additional kinetic energy is provided to electric charge carrier.Increase kinetic energy, electric charge carrier increases realization and generates cycle excitation process （CEP）Scattering process possibility.

Fig. 8 C are until Fig. 8 F show the qualitative of the tunnel transistor for being directed to Fig. 8 A and Fig. 8 B during the operation of transistor Energy band is aligned.For example, Fig. 8 C show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition（Leakage Pole tension subtracts source voltage）>0 and VGS（Gate voltage minus source voltage）>0, or for T-PMOS, VDS<0 and VGS = 0.The energy band of Fig. 8 D illustrates the energy band alignment for bias condition, for T-NMOS under the bias condition, VDS= 0 and VGS>0, or for T-PMOS, VDS=0 and VGS=0.The energy band of Fig. 8 E illustrates the energy band pair for bias condition Standard, for T-NMOS, VDS under the bias condition>0 and VGS=0, or for T-PMOS, VDS<0 and VGS< 0.Figure The energy band of 8F illustrates the energy band alignment for bias condition, for T-NMOS, VDS=0 and VGS=0 under the bias condition, or Person is for T-PMOS, VDS=0 and VGS< 0.

Although valence band or conduction band that Fig. 8 A are illustrated as first part and second part to have substantial constant energy level, First part and second part can be configured so as to valence band and the modified energy level of conduction band.For example, it is also possible to select material Material and doping are to provide the energy band diagram according to Fig. 9 A and Fig. 9 B.Fig. 9 A are indicated when electronic device does not apply electric energy to transistor Energy band diagram.Fig. 9 B be in the case that shown in the apparent Fig. 9 A of influence of material interface and fermi level valence band and conduction band more True version.Such as from Fig. 9 A it will be evident that the valence band of first part and conduction band are between the first semiconductor 12 and the second semiconductor 14 It is continuous to reduce.The conduction band and valence band of second part continuously reduce between the first semiconductor 12 and the second semiconductor 14.When from It reduces or keeps constant in the energy of each interface conduction band when two semiconductors 14 are moved to the first semiconductor 12, and when from the Increase or keep constant in the energy of each interface valence band when semiconductor 12 is moved to the second semiconductor 14.Tune can be passed through Save the composition of channel material（Therefore band gap）Lead to the valence band of first part and/or second part and the reduction of conduction band energy, So that the valence band edge matching of channel material 88（There is no potential barrier for hole）Or substantially match semi-conducting material 14 valence band edge, and the conduction band edge matching of channel material 90（There is no potential barrier for electronics）Or it substantially matches The conduction band edge of semi-conducting material 12.The adjusting of the composition of material 88 and 90 and therefore band gap ensures associated charge carrier not It can be appreciated that the barrier potential for the reduction that can cause driving current.

Fig. 9 C are until Fig. 9 F show the qualitative of the tunnel transistor for being directed to Fig. 9 A and Fig. 9 B during the operation of transistor Energy band is aligned.For example, Fig. 9 C show the energy band alignment for bias condition, for T-NMOS, VDS under the bias condition（Leakage Pole tension subtracts source voltage）>0 and VGS（Gate voltage minus source voltage）>0, or for T-PMOS, VDS<0 and VGS = 0.The energy band of Fig. 9 D illustrates the energy band alignment for bias condition, for T-NMOS under the bias condition, VDS= 0 and VGS>0, or for T-PMOS, VDS=0 and VGS=0.The energy band of Fig. 9 E illustrates the energy band pair for bias condition Standard, for T-NMOS, VDS under the bias condition>0 and VGS=0, or for T-PMOS, VDS<0 and VGS< 0.Figure The energy band of 9F illustrates the energy band alignment for bias condition, for T-NMOS, VDS=0 and VGS=0 under the bias condition, or Person is for T-PMOS, VDS=0 and VGS< 0.

As noted above, when being moved to the first semiconductor 12 from the second semiconductor 14 in the energy of each interface conduction band Amount can be kept constant, and when being moved to the second semiconductor 14 from the first semiconductor 12 in the energy of each interface valence band It can keep constant.For example, it is also possible to select material and doping to provide the energy band diagram according to Figure 10 A and Figure 10 B.Figure 10 A tables Show the energy band diagram when electronic device does not apply electric energy to transistor.Figure 10 B are the influences in material interface and fermi level The truer version of valence band and conduction band in the case of apparent shown in Figure 10 A.Figure 10 A and Fig. 6 A similarities are, when from The energy level of the valence band of third semiconductor 16 and conduction band reduces when two semiconductors 14 are moved to the first semiconductor 12；However, valence band Interface of the energy between the second semiconductor 14 and third semiconductor 16 keeps substantial constant.Similarly, the energy of conduction band Interface between third semiconductor 16 and the second semiconductor 14 keeps substantial constant.It usually can be by for device The wise selection of multiple materials of different piece realizes of the energy level in the interface of two kinds of materials of valence band and/or conduction band Match.It may be advantageous for these reductions, because it is provided provides volume in the case where that need not apply high voltage to electric charge carrier The possibility of outer kinetic energy.Increase kinetic energy, electric charge carrier increase, which is realized, generates cycle excitation process（CEP）Scattering process possibility Property.

Figure 10 C are until Figure 10 F show the tunnel transistor for Figure 10 A and Figure 10 B during the operation of transistor Qualitative energy band alignment.For example, Figure 10 C show the energy band alignment for bias condition, for T-NMOS under the bias condition, VDS（Drain voltage subtracts source voltage）>0 and VGS（Gate voltage minus source voltage）>0, or for T-PMOS, VDS <0 and VGS=0.The energy band of Figure 10 D illustrates the energy band alignment for bias condition, for T- under the bias condition NMOS, VDS=0 and VGS>0, or for T-PMOS, VDS=0 and VGS=0.The energy band of Figure 10 E is illustrated for bias The energy band of situation is aligned, for T-NMOS, VDS under the bias condition>0 and VGS=0, or for T-PMOS, VDS< 0 And VGS< 0.The energy band of Figure 10 F illustrates the energy band alignment for bias condition, for T-NMOS under the bias condition, VDS=0 and VGS=0, or for T-PMOS, VDS=0 and VGS< 0.

Other transistor types can also include contra-doping knot.For example, Heterojunction Bipolar Transistors（HBT）It generally includes Share two pn-junctions in common area.It can be contra-doping hetero-junctions that one in the pn-junction multiple.In some cases, hetero-junctions Bipolar transistor（HBT）Base stage and collector between knot be contra-doping hetero-junctions.In some cases, base stage and current collection Knot between pole is contra-doping hetero-junctions and the knot between base stage and collector is contra-doping hetero-junctions.It is double to be included in hetero-junctions Bipolar transistor（HBT）One or more of each in contra-doping hetero-junctions can be according to Figure 1A until in Fig. 1 C Any of disclosed contra-doping hetero-junctions constructs.

Figure 11 A be include Heterojunction Bipolar Transistors（HBT）Device a part cross section.The heterogenous dual-pole Transistor npn npn（HBT）Include the base stage 100 between collector 102 and emitter 104 so that charge is existed by base stage 100 It is flowed between collector 102 and emitter 104.Base stage 100 and both collector 102 and emitter 104 direct physical contact.Hair Emitter-base bandgap grading electric contact piece 106 and 104 telecommunication of emitter.Collector electric contact piece 108 and 102 telecommunication of collector.Base stage electricity connects Contact element 110 and 100 telecommunication of base stage.Insulation spacer 112 is located at each and emitter 104 in base stage electric contact piece 110 Between and electrical isolation can be provided between base stage electric contact piece 110 and emitter 104.Emitter electric contact piece can be used 106, collector electric contact piece 108 and base stage electric contact piece 110 to apply electric energy to transistor during the operation of transistor.It is shallow Groove isolation construction 114 can extend in collector 102.

Suitable material for spacer 112 includes but not limited to dielectric material（Such as silica）.For shallow trench every Suitable material from structure 114 includes but not limited to dielectric material（Such as silica）.Suitable material packet for collector 102 Include but be not limited to silicon, SiGe and/or SiGeC alloys, Si-Ge-C superlattices.Suitable material for emitter 104 includes but not It is limited to SiGe and/or SiGeC alloys, Si-Ge-C superlattices, monocrystalline silicon（It can be in the identical growth sequence for forming base stage 100 Middle epitaxial growth）And polysilicon（It is heavy usually after the silica of single monolayer thick is formed on the top of base stage 100 Product）.Suitable material for base stage 100 includes but not limited to SiGe and/or SiGeC alloys, Si-Ge-C superlattices.

When the transistor of Figure 11 A is NPN Heterojunction Bipolar Transistors（HBT）When, emitter 104 can be doped so as to As N-shaped emitter, base stage 100 can be doped to become p-type base stage, and collector 102 can be doped to become For N-shaped collector.In these cases, up to Fig. 1 C, the first semiconductor 12 of any one may be used as collector 102 to Figure 1A, Figure 1A is until the second semiconductor 14 of any of Fig. 1 C may be used as base stage 100.When the transistor of Figure 11 A is PNP different Matter knot bipolar transistor（HBT）When, emitter 104 can be doped to become p type emitter, and base stage 100 can be incorporated It is miscellaneous to become N-shaped base stage, and collector 102 can be doped to become p-type collector 102.In these cases, base Pole 100 may be used as Figure 1A until Fig. 1 C the first semiconductor 12, and collector 102 may be used as Figure 1A until Fig. 1 C Any of the second semiconductor 14.In in these examples each, the pn between base stage 100 and emitter 104 Knot can be optionally one in contra-doping hetero-junctions disclosed above.For example, when the first semiconductor 12 is used as base stage 100 When, one the second semiconductor 14 in contra-doping knot disclosed above may be used as emitter.When the second semiconductor 14 When as base stage 100, one the first semiconductor 12 in contra-doping knot disclosed above may be used as emitter.Alternatively Ground, the 4th semiconductor in one being not included in contra-doping knot disclosed above may be used as emitter.The material It can optionally be combined, therefore HBT is double hetero bipolar transistor npn npn（DHBT）Or single heterojunction bipolar transistor （DHBT）.

As noted above, the first semiconductor 12 in contra-doping knot and/or the second semiconductor 14 may include multiple Sublayer is made of multiple sublayers, each in multiple sublayer is semiconductor.Figure 11 B diagram include it is modified with So that collector 102 includes a part for the device of the Heterojunction Bipolar Transistors of Figure 11 A of multiple sublayers.For example, the device Part includes substrate 120.A part for the substrate 120 includes the first area 122 and the second area 124.At least one of firstth area 122 Divide between base stage 100 and the second area 124.It firstth area 122 can be with 100 direct physical contact of base stage.Firstth area 122, at least part of the second area 124 and substrate 120 is doped with identical polarity.Firstth area 122,124 and of the secondth area At least part of substrate 120 serves as collector 102.When collector 102 is by contra-doping, from by the first area 122, the secondth area 124 and the group that forms of substrate 120 at least one component for selecting can be by contra-doping.In some cases, 124 quilt of the secondth area Contra-doping.Not by the concentration of the main dopant in the concentration of the dopant in the component of contra-doping and any contra-doping component Each may be larger than 5E18cm^-3、1E19cm^-3Or 5E19cm^-3And/or it is less than 1E21cm^-3、5E20cm^-3Or 1E20cm^-3。

In Figure 11 B, the different layers of collector 102 are the not same districts of same substrate 120.When substrate 120 includes single half When conductor, the different sublayers of collection portion may include identical semiconductor；However, the first semiconductor 12, the second semiconductor 14 and/ Or the different layers of third semiconductor 16 may include different semiconductors.For example, Figure 11 C diagram includes modified so that current collection Pole 102 includes a part for the device of the Heterojunction Bipolar Transistors of Figure 11 A of multiple sublayers.For example, the device includes lining The first sublayer 126, the second sublayer 128 on bottom 120 and third sublayer 130.At least part of substrate 120 is used as collector One in 102 sublayer.Second sublayer 128 is between the first sublayer 126 and third sublayer 130.First sublayer 126 is extremely A few part is between base stage 100 and the second sublayer 128, and at least part of third sublayer 130 is located at 120 He of substrate Between second sublayer 128.First sublayer 126 can be with base stage with 100 direct physical contact of base stage and third sublayer 130 100 direct physical contacts.First sublayer 126, the second sublayer 128, third sublayer 130 and substrate 120 are doped with identical Polarity.First sublayer 126, the second sublayer 128, third sublayer 130 and substrate 120 serve as collector 102 together.Work as collector 102 by contra-doping when, selected from the group being made of the first sublayer 126, the second sublayer 128, third sublayer 130 and substrate 120 At least one component can be by contra-doping.In some cases, second sublayer 128 is by contra-doping.Not by contra-doping Each in the concentration of dopant in component and the concentration of the main dopant in any contra-doping component may be larger than 5E18cm^-3、1E19cm^-3Or 5E19cm^-3And/or it is less than 1E21cm^-3、5E20cm^-3Or 1E20cm^-3。

Although the different layers of collector 102 are illustrated as the not same district of same substrate 120 by Figure 11 B, substrate 120 is not Same district can be different sublayer（As shown in Figure 11 C）.It is, for example, possible to use with the first son illustrated in Figure 11 C Layer 126 and second and excludes the device of third sublayer 130 to implement the device of Figure 11 B at sublayer 128.In such devices, The function in the first area 122 is executed by the first sublayer 126 and the function in the second area 124 is executed by the second sublayer 128.

Often through applying forward bias to the knot between emitter 104 and base stage 100 and to base stage 100 and collector 102 knot applies reverse biased to operate Heterojunction Bipolar Transistors.The amplification of input signal is in base stage 100 and collector Occur in knot between 102.Collector electricity is allowed using contra-doping hetero-junctions for the knot between base stage 100 and collector 102 The amplification of stream.

Figure 11 A are until the transistor of Figure 11 C can be operated as optical sensor.When transistor is according to Figure 11 A structures When the NPN HBT and/or optical sensor that make；Base stage 100 and 102 material of collector and doping can be selected such as to scheme to provide Opposite conduction band and valence band shown in 11D and Figure 11 E.Figure 11 E are shown in the energy band diagram before electronic device is biased to HBT And Figure 12 C are shown in electronic device operation HBT to generate energy band diagram when optical signal.Particularly, base stage and collector it Between energy band alignment the conduction band edge in collector can be made than lower in base stage（Negative Δ Ec）, and the valence in base stage Belt edge is than the higher in collector（Positive Δ Ev）.As an example, it can be generated according to Figure 11 D using following items Energy band diagram：Collector 102（First semiconductor 12）, which may include contra-doping N-shaped Si and/or contra-doping N-shaped SiGeC alloys；Base stage 100（Second semiconductor 14）, which is contra-doping p-type SiGeC alloys；It, should with emitter 104 Emitter 104 may include contra-doping N-shaped Si and/or contra-doping N-shaped SiGeC alloys.

When HBT includes the contra-doping knot between base stage 100 and collector 102, base stage 100 and collector material can be selected Material and doping are more than 0.1V, 0.3V, 0.5V or 0.8V and/or rising less than 3V, 2V or 1V to be provided to contra-doping hetero-junctions Beginning voltage.

The example of semiconductor used in base stage 100, emitter 104 and collector 102 includes heterojunction material, unordered conjunction The ordered alloy that golden or technology by such as epitaxial growth etc generates.However, from by base stage 100, emitter 104 and current collection One or more of the component selected in the group that pole 102 forms can be superlattices.In some cases, transistor is at least Base stage 100 includes superlattices or is made of superlattices.Suitable superlattices for being included in the base stage 100 of transistor include But it is not limited to Si-Ge-C superlattices.Additional detail described below about suitable superlattices.Superlattices can have lower electricity Son and/or hole mass, this can improve the electrical property of transistor.Further, which can be used in emitter Realize valence band and/or conduction band offset, profit in interface between 104 and base stage 100 or between base stage 100 and collector 102 It can not be achieved with usually used SiGe and/or SiGeC disordered alloys.

The superlattices can have direct band gap（It is with big oscillator strength）.Therefore, these materials can realize height Imitate light absorption and light emitting.Allow illustrated transistor operation as light so including these superlattices in base stage 100 Source.For example, Figure 11 A until Figure 11 C any of transistor may include have direct band gap superlattices and can To be operated as light source.It is alternatively possible to by reflecting layer be added to Figure 11 A until Figure 11 C any of transistor To provide the resonant cavity for allowing source operation as laser cavity.For example, Figure 12 A diagram is modified to operation as can be The transistor of Figure 11 B of the laser of HBT lasers or DHBT lasers.Laser includes that base stage reflector 132 and second are anti- Emitter 134.Base stage reflector 132 and the second reflector 134 may be configured to provide Fabry-Perot（FP）Laser cavity.Example Such as, base stage reflector 132 and/or the second reflector 134 are fractional transmissions to provide the output from laser cavity.When base stage is anti- When emitter 132 is fractional transmission, the second reflector 134 can be fractional transmission or total reflection.When the second reflector 134 is Fractional transmission when, base stage reflector 132 can be fractional transmission or total reflection.It is anti-for base stage reflector 132 and second The suitable material of emitter 134 includes but not limited to Si, Ge, Si_1-xGe_xDisordered alloy（Herein x be greater than or equal to 0 and/or Less than or equal to 1）And Si_1-x-yGe_xC_yDisordered alloy（X is more than 0 and more than 0 and small less than or equal to 1 and y herein In or equal to 0.25）.

When compared with existing HBT lasers, make electric signal and optical signal amplification using contra-doping knot in light source.Separately It outside, can be by increasing base stage 100（Occur herein compound）In the constraint of carrier increase the efficiency of light output.Cause This, the energy bandmatch of base stage 100 and collector 102 can make electrons and holes be constrained in base stage 100.The constraint can be with It is realized using the base material being made of direct band gap Si-Ge-C superlattices, the conduction band of direct band gap Si-Ge-C superlattices Edge is than emitter and collector area（The alignment of the energy band of type I or nesting）Conduction band edge it is lower, and direct band gap Si- The valence band edge of Ge-C superlattices is than the emitter and collector area（The alignment of the energy band of type I or nesting）Valence band edge Higher.

When HBT and/or light source include the collector 102 with three sublayers such as illustrated in fig. 12；It can select Base stage 100, emitter 104 and collector material and doping are selected to provide such as opposite conduction band shown in Figure 12 B and 12C And valence band.Figure 12 B are shown in the energy band diagram before electronic device is biased to HBT and/or light source, and Figure 12 C are shown in Electronic device operates HBT and/or light source to generate energy band diagram when optical signal.In these energy band diagrams, the conduction band of base stage 100 Edge is lower than the conduction band edge of emitter 104 and collector 102（Negative Δ Ec）, and the valence band edge of base stage 100 is than hair The valence band edge higher of emitter-base bandgap grading 104 and collector 102（Positive Δ Ev）.The base stage 100 has relative to emitter 106 and current collection Zero Δ Ec of pole 126, and relative to the positive Δ Ev of emitter 106 and collector 126, electronics is achieved in from emitter 106 By base stage 100 and to the smooth flow in collector 126.Contra-doping area inside 100 inside of base stage and collector 102 is logical The scattering of electrons and holes and impurity that phonon assists is crossed to provide current gain.It is not deposited in conventional H BT or phototransistor In such current gain.

When HBT and/or light source include the collector 102 with four sublayers such as illustrated in Figure 11 C, Ke Yixuan Select base stage 100, emitter 104 and collector material and doping with provide such as opposite conduction band shown in Figure 12 D and 12E and Valence band.Figure 12 D are shown in the energy band diagram before electronic device is biased to light source, and Figure 12 E are shown in electronic device behaviour Make light source to generate energy band diagram when optical signal.In these energy band diagrams, which has relative to 106 He of emitter The negative Δ Ec of collector 126, and relative to the positive Δ Ev of emitter 106 and collector 126, thus about by electrons and holes Beam is in base stage 100 and increases the probability from the compound photon transmitting of electron-hole.100 inside of base stage and collector 102 The scatterings of the electrons and holes and impurity that internal contra-doping area is assisted by phonon provides current gain.In conventional H BT or Such current gain is not present in HBT light sources.As an example, can by by n-type silicon be used as emitter 104, will be anti- Doped p type superlattices are used as base stage 100, n-type silicon is used as to the first sublayer 126, contra-doping N-shaped SiGeC are used as the second sublayer 128, it is generated according to Figure 12 B and figure as substrate 120 by N-shaped Si-Ge-C alloys as third sublayer 130 and by n-type silicon The energy band diagram of 12C.Suitable superlattices another example is the superlattices for including silicon, germanium and carbon.Such as from Figure 12 B it will be evident that Between second sublayer 128 and substrate 120, the conduction band of third sublayer 130 can have increased energy level.Change can be passed through The composition of SiGeC alloys generates the gradient.In some cases, the composition of change SiGeC alloys is so that attached in substrate 120 The nearly composition is almost pure silicon, because of the percentage highest of Ge and C and therefore band gap minimum sublayer 128 near.

Figure 11 A until Figure 12 C transistor and light source be included at the knot between emitter 104 and base stage 100 and The pn-junction at knot also between collector 102 and base stage 100.However, one or more of these knots can be p-i-n Knot.For example, in Figure 11 A until transistor disclosed in the context of Figure 12 C may include as emitter 104 and base stage The contra-doping p-i-n junction of knot between 100.As an example, a part for device of Figure 13 A diagrams with optical sensor, The optical sensor includes modified into the figure for including contra-doping p-i-n junction as the knot between emitter 104 and base stage 100 The transistor of 11C.Third semiconductor 16 is between base stage 100 and emitter 104.Third semiconductor 16 can be contra-doping p- The intrinsic semiconductor of i-n knots.When the first semiconductor is used as base stage 100, one in contra-doping knot disclosed above Second semiconductor 14 may be used as emitter.When the second semiconductor is used as base stage 100, in contra-doping knot disclosed above One the first semiconductor 12 may be used as emitter.Alternatively, it is not included in contra-doping knot disclosed above The 4th semiconductor in one may be used as emitter.

In some cases, the contra-doping p-i-n junction between emitter 104 and base stage 100 is hetero-junctions.When the device It is included in the contra-doping p-i-n junction between emitter 104 and base stage 100 and the contra-doping between base stage 100 and collector 102 When pn-junction, contra-doping p-i-n junction may be configured to rising more than 0.3V, 0.5V or 0.8V and/or less than 3V, 2V or 1V Beginning voltage, and contra-doping pn-junction may be configured to have more than 0.3V, 0.5V or 0.8V and/or less than 3V, 2V or 1V Starting voltage.

When base stage 100, emitter 104, third half when constructing HBT and/or optical sensor, can be selected according to Figure 13 A Conductor 16 and collector material and doping are to provide such as conduction band and valence band shown in Figure 13 B and 13C.Figure 13 B are shown in Electronic device be biased to optical sensor before energy band diagram, and Figure 13 C be shown in electronic device operation optical sensor with Just energy band diagram when photoelectric current is generated.As shown in Figure 13 C, in the interface of base stage 100 and third semiconductor 16, third The energy of the conduction band of semiconductor 16 can be more than the energy of the conduction band of emitter 104.Therefore, third semiconductor 16 may be used as base Tunneling barrier between pole 100 and emitter 104.The tunneling barrier can accelerate injected electrons and improve electronics to pass through base Pole 100 towards collector gait of march and correspondingly enhance HBT performance.

In addition, in Figure 13 B and 13C, tunnel barrier 16 has the positive Δ Ec relative to emitter 106 and base stage 100. Tunneling barrier 16 has negative Δ Ev relative to base stage 100, and it is zero or positive that can have relative to emitter 106 ΔEv.The tunnel injection device can accelerate the electronics by base stage 100 and therefore improve the performance of HBT.100 inside sum aggregate of base stage The scatterings of the electrons and holes and impurity that contra-doping area inside electrode 102 is assisted by phonon provides current gain.Normal It advises and such current gain is not present in HBT or phototransistor.It as an example, can be by the way that n-type silicon be used as transmitting Undoped silicon is used as third semiconductor 16, contra-doping p-type superlattices is used as base stage 100, close N-shaped Si-Ge-C by pole 104 Gold is used as the first sublayer 126, contra-doping N-shaped Si-Ge-C alloys is used as the second sublayer 128, are used as N-shaped Si-Ge-C alloys Third sublayer 130 and n-type silicon is generated into the energy band diagram according to Figure 13 C and Figure 13 D as substrate 120.Suitable superlattices Another example is the superlattices for including silicon, germanium and carbon.Such as from Figure 13 D it will be evident that between base stage 100 and the second sublayer 128, The conduction band of one sublayer 126 can have increased energy level.In addition, between the second sublayer 128 and substrate 120, third sublayer 130 With increased energy level.The first sublayer 126 and third sublayer 130 can be generated by changing the composition of the material in these layers Energy level in this gradient.For example, when one or more of these layers are SiGeC alloys, thus it is possible to vary the composition with So that near substrate 120, which is almost pure silicon（Near sublayer 128, the percentage highest of Ge and C and therefore band Gap is minimum）.

It can be by being carried between base stage 100 and collector 102 or between base stage 100 and the sublayer of collector 102 For potential barrier come further enhance the constraint in base stage 100 with valence band and and/or conduction band in potential barrier is provided.For example, in base stage 100 and collector 102 interface, the energy of the conduction band of collector 102 can be more than the energy of the conduction band of base stage 100.When When realizing the arrangement in the energy band diagram of Figure 13 B and Figure 13 C, the device operation is as with the tunnel injection from emitter to base stage Light source.As another example, in the interface of base stage 100 and collector 102, the first area 122 of Figure 11 B or Figure 12 A or The energy of the conduction band of the first sublayer 126 of Figure 11 C or Figure 13 A can be more than the energy of the conduction band of base stage 100.In these examples In, the layer of collector 102 is used as the constraint potential barrier between base stage 100 and collector 102.The constraint potential barrier can enhance base stage Electrons and holes constraint in 100, so that in base stage（Emit photon from here）It is middle that there are the compound increasings of electronics and hole Big probability.

As an example, can select base stage 100, emitter 104, third semiconductor 16 and 102 material of collector and Doping is to provide such as conduction band and valence band shown in Figure 13 D and Figure 13 E.Figure 13 D are shown in electronic device to optical sensor The energy band diagram of device shown in such as Figure 11 C or Figure 13 A before being biased, and Figure 13 E are shown in electronic device operation Optical sensor or transistor are to generate energy band diagram when optical signal.Such as from Figure 13 E it will be evident that in base stage 100 and collector 102 Between and also there are tunneling barriers between base stage 100 and emitter 104.For example, Figure 13 E are shown in emitter 104 and The conduction band energy of the interface of three semiconductors 16, third semiconductor 16 is more than the conduction band energy of emitter 104 and is also shown in The interface of base stage 100 and collector 102, the conduction band energy of the first sublayer 126 are more than the conduction band energy of base stage 100.In addition, working as When base stage 100 has the negative Δ Ec and positive Δ Ev relative to both tunneling barrier 16 and collector 102, electronics can be completed With constraint of the hole in base stage 100.Improved constraint of the electrons and holes in base stage 100 increases multiple by electron-hole The probability of the photon transmitting of conjunction.The electronics and sky that contra-doping area inside 100 inside of base stage and collector 102 is assisted by phonon The scattering of cave and impurity provides current gain.Such current gain is not present in conventional H BT or HBT light source.As one A example, can be by surpassing n-type silicon as emitter 104, by undoped silicon as third semiconductor 16, by contra-doping p-type Lattice is used as base stage 100, N-shaped Si-Ge-C alloys are used as to the first sublayer 126, contra-doping N-shaped Si-Ge-C alloys is used as the Two sublayers 128 are generated as substrate 120 according to Figure 13 D by N-shaped Si-Ge-C alloys as third sublayer 130 and by n-type silicon With the energy band diagram of Figure 13 E.Suitable superlattices another example is the superlattices for including silicon, germanium and carbon.It is such as apparent from Figure 13 D , between base stage 100 and the second sublayer 128, the conduction band of the first sublayer 126 can have increased energy level.In addition, second Between sublayer 128 and substrate 120, the conduction band of third sublayer 130 has increased energy level.It can be by changing the material in these layers The gradient in energy level of the composition of material to generate the first sublayer 126 and third sublayer 130.For example, when one in these layers It is or multiple when being SiGeC alloys, thus it is possible to vary for the composition so that near substrate 120, which is almost pure silicon（In sublayer Near 128, the percentage highest of Ge and C and therefore band gap are minimum）.

Possibly through by device configuration at making emitter 104 via tunnelling process（It is across from emitter 104 to base stage 100 band gap occurs）It injects charge into and carrier is inhibited to be noted from emitter 104 to the thermoelectron of base stage 100 in base stage 100 Enter.In these cases, base stage 100 and emitter 104 can be doped with identical polarity.The arrangement can be provided from transmitting The injection of best base stage is injected to inhibit the temperature-induced thermoelectron from transmitting best base stage（It is undesired）.Work as crystal When pipe or HBT have p-type base stage 100, emitter 104 can be doped so as to become p type emitter 104 and when transistor or When optical sensor has N-shaped base stage 100, emitter 104 can be doped to become N-shaped emitter.In doping configuration In the case of, barrier potential between emitter 104 and base stage 100 must it is sufficiently large with prevent majority carrier emitter and base stage it Between free-flowing, to prevent " short circuit " between emitter 104 and base stage 100.For example, when the device has p-type base When pole, barrier potential between emitter 104 and base stage 100 must be sufficiently large to prevent hole flow to emitter and/or from transmitting It flows out pole.Alternatively, when the device has N-shaped base stage, barrier potential between emitter 104 and base stage 100 must it is sufficiently large with Prevent electronics from flowing to emitter and/or being flowed out from emitter.It can be by changing emitter and base stage on the boundary with potential barrier Forming to change the size of barrier potential at face.

As an example, base stage 100, emitter 104, third semiconductor 16 and collector material and doping can be selected To provide such as conduction band and valence band shown in Figure 13 F and Figure 13 G.Figure 13 F are shown in electronic device and are biased it to HBT The energy band diagram of device shown in preceding such as Figure 11 C or Figure 13 A, and Figure 13 G be shown in electronic device operation optical sensor or Transistor so as to execute electronics amplification when energy band diagram.Figure 13 F show before being biased to device, 104 valence band of emitter Energy level between the energy level and the energy level of base stage conduction band of base stage valence band.However, as shown in Figure 13 G, work as electronic device When applying the current potential of current potential more positivity than being applied to emitter 104 to base stage 100, the energy level of emitter valence band is led towards base stage The energy shift of band.Potential difference（The voltage applied）Can be increased up to the tunnelling in base stage conduction band becomes significantly simultaneously Until barrier potential between emitter valence band and base stage valence band prevents the injection in from base stage valence band to emitter valence band.These Part can be in the potential barrier in the energy that energy bandmatch makes between emitter valence band and base stage conduction band（Δ BT is marked in Figure 13 F） It is sufficiently small can be realized when the injection by tunnelling using the small voltage of across third semiconductor 16 to realize.In addition, base stage valence With the energy barrier between top and 16 top of valence band of third semiconductor（Δ E is marked in Figure 13 F_VT）Than Δ BT biggers.In certain feelings Under condition, Δ E_VTBe Δ BT values be more than 2 times, 3 times or 4 times.Furthermore it is possible to by being aligned with energy band shown in 13G in Figure 13 F （Wherein, tunneling barrier 16 has conduction band edge more higher than the conduction band edge of emitter 106 and base stage 100（Positive Δ Ec）, And there is valence band edge more lower than the valence band edge of emitter 106 and base stage 100（Negative Δ Ev））Pass through to complete electronics Tunneling barrier 16 between emitter 100 and base stage 100 is injected from the interband in the valence band to base stage 100 of emitter 106.The note Enter mechanism and inhibits thermoelectron injection of the electronics from transmitting best base stage.Contra-doping area inside 100 inside of base stage and collector 102 The scattering of the electrons and holes and impurity that are assisted by phonon provides current gain.In conventional H BT or phototransistor not There are such current gains.It as an example, can be by the way that p-type silicon be used as emitter 104, undoped silicon is used as the Three semiconductors 16, by contra-doping p-type superlattices be used as base stage 100, by N-shaped Si-Ge-C alloys be used as the first sublayer 126, will be anti- Doping N-shaped Si-Ge-C alloys are used as the second sublayer 128, N-shaped Si-Ge-C alloys are used as third sublayer 130 and use n-type silicon Make substrate 120 to generate the energy band diagram according to Figure 13 F and Figure 13 G.Suitable superlattices another example is including silicon, germanium and carbon Superlattices.Such as from Figure 13 F it will be evident that between base stage 100 and the second sublayer 128, the conduction band of the first sublayer 126 can have Increased energy level.In addition, between the second sublayer 128 and substrate 120, the conduction band of third sublayer 130 has increased energy level.It can With by change the material in these layers form generate the first sublayer 126 and third sublayer 130 energy level in this ladder Degree.For example, when one or more of these layers are SiGeC alloys, thus it is possible to vary the composition is so that attached in substrate 120 Closely, which is almost pure silicon（Near sublayer 128, the percentage highest of Ge and C are to reduce band gap）.

Can with across from emitter 104 to base stage 100（That is, from the valence band of emitter 104 to the conduction band of base stage）Band gap Tunnelling combined use can also be enhanced in base stage by using the tunneling barrier between base stage 100 and collector 102 Carrier comfinement in 100.For example, the device of Figure 13 F and Figure 13 G may be modified as being included in base stage 100 and collector 102 Sublayer between tunneling barrier（As disclosed in the context of Figure 13 D and Figure 13 E）.As an example, it can select Base stage 100, emitter 104, third semiconductor 16 and collector material and doping are such as shown in Figure 13 H and Figure 13 I with providing The opposite conduction band and valence band gone out.Figure 13 H are shown in before electronic device is biased to optical sensor shown in such as Figure 13 A The energy band diagram of device, and Figure 13 I are shown in electronic device operation optical sensor or transistor to generate energy when optical signal Band figure.Figure 13 H show before being biased to device, the energy level and base stage conduction band of the energy level of emitter valence band in base stage valence band Energy level between.Figure 36 I show the tunnelling of the conduction band from the valence band of emitter 104 to base stage 100.In addition, tunneling barrier exists Between base stage 100 and collector 102.For example, Figure 13 I are shown in the interface of base stage 100 and collector 102, the first sublayer 126 conduction band energy is more than the conduction band energy of base stage 100.Potential barrier in from base stage to the conduction band of collector can provide constraint. Furthermore it is possible to by being aligned with energy band shown in 13G in Figure 13 F（Wherein, tunneling barrier 16 has than 106 He of emitter The higher conduction band edge of conduction band edge of base stage 100（Positive Δ Ec）, and with the valence band than emitter 106 and base stage 100 The lower valence band edge in edge（Negative Δ Ev））Pass through the tunneling barrier 16 between emitter 100 and base stage 100 to complete electronics From the interband injection in the valence band to base stage 100 of emitter 106.Concomitantly, which has more higher than base stage 100 Conduction band edge（Positive Δ Ec）With than 100 lower valence band edge of base stage（Negative Δ Ev）, so that electrons and holes are restrained In base stage 100, and therefore the compound probability with the transmitting of photon is enhanced.Inside 100 inside of base stage and collector 126 The contra-doping area scattering of electrons and holes and impurity that is assisted by phonon current gain is provided.In conventional H BT or HBT light Such current gain is not present in source.It as an example, can be by the way that p-type silicon be used as emitter 104, by undoped silicon It is used as base stage 100 as third semiconductor 16, by contra-doping p-type superlattices, N-shaped Si-Ge-C alloys is used as the first sublayer 126, contra-doping N-shaped Si-Ge-C alloys are used as the second sublayer 128, N-shaped Si-Ge-C alloys is used as 130 and of third sublayer N-type silicon is generated into the energy band diagram according to Figure 13 H and Figure 13 I as substrate 120.Suitable superlattices another example is including The superlattices of silicon, germanium and carbon.Such as from Figure 13 H it will be evident that between the second sublayer 128 and substrate 120, third sublayer 130 is led Band has increased energy level.The first sublayer 126 and third sublayer can be generated by changing the composition of the material in these layers This gradient in 130 energy level.For example, when one or more of these layers are SiGeC alloys, thus it is possible to vary the composition So that near substrate 120, which is almost pure silicon, and the percentage of Ge and C increase to reduce the band near sublayer 128 Gap.

In order to simplify the purpose of the disclosure, in Fig. 4 A until transistor disclosed in the context of Figure 13 I is usual It is considered as NPN transistor.However, doping polarity can be reversed in order to provide PNP transistor as known in the art.Separately Outside, first semiconductor and the second semiconductor are usually disclosed as the two all by contra-doping；However, such as in Fig. 1 and the explanation What the otherwise in book was pointed out, it does not need both first semiconductor and second semiconductor and is all doped and pass through sound to realize The amplification of sub- auxiliary mechanism.Therefore, above-mentioned device in some cases, first semiconductor is by contra-doping without to second Semiconductor carries out contra-doping or the second semiconductor by contra-doping without carrying out contra-doping to the first semiconductor.

Include but not limited to for first semiconductor 12 that is suitble to used in contra-doping knot：Si、Si_1-xGe_x、Si_1-yC_yAnd Si_1-x-yGe_xC_y.Include but not limited to for second semiconductor 14 that is suitble to used in contra-doping knot：Si、Si_1-xGe_x、Si_1-yC_y、 And Si_1-x-yGe_xC_y.Include but not limited to for the suitable third semiconductor 16 used in contra-doping knot：Si、Si_1-xGe_x、Si_1- _yC_yAnd Si_1-x-yGe_xC_y.Include but not limited to for the suitable n-type dopant used in contra-doping knot：P, As and Sb.For anti- Adulterating the suitable p-type dopant used in knot includes but not limited to：B, Ga and In.

As noted above, which may include superlattices（All SiGeC superlattices as disclosed above with And other superlattices disclosed above）Or it is made of the superlattices.Additionally or in the alternative, which may include light absorption Medium, gain media, optical sensor or light source comprising superlattices are made of superlattices.These superlattices may include weight It is multiple repeatedly to form the unit of superlattices.Each superlattices unit has multiple atomic planes parallel to each other.For example, Figure 14 It is the cross section of superlattices system.The superlattices system includes the superlattices 150 being located on substrate 152.The superlattices 150 include Various superlattices units 154.Each superlattices unit 154 is can be repeated to create superlattices 150 most Subsection.Each in the unit 154 includes being arranged in atom in multiple atomic planes 156, in multiple atomic plane 156 Each is parallel or substantially parallel and parallel to each other or basic with the surface for the substrate 152 that superlattices 150 are disposed thereon It is parallel.

Following symbol can be used（CC₁）_ap1-（CC₂）_ap2…-（CC_n）_apnState the composition of superlattices unit 154, CC herein_nIt indicates the chemical composition of atomic plane n and apn indicates to have by CC_nThe atomic plane 156 of the chemical composition of expression Number.When apn is more than 1, associated atomic plane 156 is directly adjacent to mutually in superlattices unit 154.For example, when apn is big When 1, associated atomic plane 156 can mutual covalent bonding.At least two in atomic plane 156 in superlattices unit 154 It is a that there is different chemical compositions.

In some cases, at least two in the atomic plane in the superlattices unit have different chemical compositions.It should One or more of atomic plane in superlattices unit may include carbon.One in one or more atomic planes including carbon Or it is multiple in each can also include 10% or more replacement carbon.In some cases, which includes being less than Or the total number of the atomic plane equal to 40,20,10 or 5.In some cases, one in the atomic plane in the superlattices unit Or multiple includes tin and/or lead.The superlattices can have selected from the group being made of the following terms one, two, three A or more feature：The super crystalline substance of at least two including carbon in atomic plane in superlattices unit with different chemical compositions One or more of atomic plane in lattice unit including 10% or more replacement carbon one or more atomic planes in one A or multiple, which includes the total number of the atomic plane less than or equal to 40,10 or 5, and the superlattices unit In one or more of atomic plane include tin and/or lead.

In some cases, at least one of atomic plane has the Z points in Brillouin zone（And/or its equivalent Y）Place's tool There is the chemical composition of the material of maximum price band.For example, at least one of the atomic plane has in Brillouin zone from by Z points The chemical composition of material with maximum price band at the point selected in the group formed with Y points.In one example, this at least one A atomic plane has by Si₂Sn₂The chemical composition that C is indicated.

In some cases, superlattices unit is repeated multiple times to form superlattices.Each superlattices unit has Multiple atomic planes parallel to each other.The superlattices have conduction band maximum value at K or K ' point of Brillouin zone.In certain situations Under, the superlattices by（Si₅）₄-（Si₅C）₄To indicate.

In some cases, be included in the atomic plane that one or more of superlattices atomic plane is ordered into, have from The chemical composition selected in the group being made of the following terms：Si₄C、Ge₄C、Sn₄C、Si₄Ge、Ge₄Si、Si₆C₂、Ge₆C₂、Sn₆C₂、 SiGe₃C、Si₂Ge₂C、Si₃GeC、SiSn₃C、Si₂Sn₂C、Si₃SnC、GeSn₃C、Ge₂Sn₂C, and Ge₃SnC.When a face is that have Sequence when, each in the correspondence lattice-site in different superlattices units is occupied by the atom of identical element.In certain feelings Under condition, it is included in that one or more of superlattices atomic plane is not ordered into and has from the group being made of the following terms The chemical composition of selection：Si_1-xGe_x（X is greater than or equal to 0 and/or less than or equal to 1 herein）、Si_1-yC_y（Y is more than herein Or equal to 0 or 0.1 and/or less than or equal to 0.25）、Si_1-x-yGe_xC_y（X is greater than or equal to 0 or 0.1 and/or is less than herein Or it is equal to 1, and y is greater than or equal to 0 or 0.01 and/or less than or equal to 0.25）、Si_1-zSn_z（Z is greater than or equal to 0 herein Or 0.01 and/or be less than or equal to 0.1）、Ge_1-zSn_z（Z is greater than or equal to 0 or 0.01 and/or is less than or equal to herein 0.05）、C_1-zSn_z（Z is greater than or equal to 0 and/or is less than 1 herein, and z is 0.20 or 0.25 in one example）、 Si_1-x-zGe_xSn_z（Herein x be greater than or equal to 0 or 0.1 and/or be less than or equal to 1, and z be greater than or equal to 0 or 0.01 and/ Or it is less than or equal to 0.1）、Si_1-y-zC_ySn_z（Y is greater than or equal to 0 or 0.01 and/or is less than or equal to 0.25, and z herein More than or equal to 0 or 0.01 and/or less than or equal to 0.1）、Ge_1-y-zC_ySn_z（Herein y be greater than or equal to 0 or 0.01 and/or Less than or equal to 0.25, and z is greater than or equal to 0 or 0.01 and/or less than or equal to 0.25）、Si_1-x-y-zGe_xC_ySn_z（At this In x be greater than or equal to 0 or 0.1 and/or be less than or equal to 1, and y is greater than or equal to and 0 or 0.01 and/or is less than or equal to 0.25, and z is greater than or equal to 0 or 0.01 and/or less than or equal to 0.25）、Si_1-xPb_x（X is greater than or equal to herein 0.001 or 0.01 and/or be less than or equal to 0.1）、Si_1-x-yPb_xC_y（X is more than or equal to 0.001 or 0.01 and/or small herein In or be equal to 0.1, and y be greater than or equal to 0.001 or 0.01 and/or be less than or equal to 0.25）、Si_1-x-y-zPb_xC_yGe_z（ Here x be greater than or equal to 0.001 or 0.01 and/or be less than or equal to 0.1, and y be greater than or equal to 0.001 or 0.01 and/or Less than or equal to 0.25, and z is greater than or equal to 0.001 or 0.01 and/or less than or equal to 0.85 or 0.95）、Si_1-x-y-z- _tPb_xC_yGe_zSn_t（X is greater than or equal to 0.001 or 0.01 and/or is less than or equal to 0.1 herein, and y is greater than or equal to 0.001 or 0.01 and/or be less than or equal to 0.25, and z be greater than or equal to 0.001 or 0.01 and/or be less than or equal to 0.85 Or 0.95, and t is greater than or equal to 0.001 or 0.01 and/or less than or equal to 0.25）、Ge_1-xPb_x（X is more than or waits herein In 0.001 or 0.01 and/or be less than or equal to 0.1）、Ge_1-x-yPb_xC_y（Herein x be greater than or equal to 0.001 or 0.01 and/or Less than or equal to 0.1, and y is greater than or equal to 0.001 or 0.01 and/or less than or equal to 0.25）、Ge_1-x-y-zPb_xC_ySn_z （Herein x be greater than or equal to 0.001 or 0.01 and/or be less than or equal to 0.1, and y be greater than or equal to 0.001 or 0.01 and/ Or it is less than or equal to 0.25, and z is greater than or equal to 0.001 or 0.01 and/or less than or equal to 0.25）.

In some cases, including one or more of one or more atomic planes of carbon be ordered into and with from The chemical composition selected in the group being made of the following terms：Si₄C、Ge₄C、Sn₄C、Si₆C₂、Ge₆C₂、Sn₆C₂、SiGe₃C、 Si₂Ge₂C、Si₃GeC、SiSn₃C、Si₂Sn₂C、Si₃SnC、GeSn₃C、Ge₂Sn₂C, and Ge₃SnC.In some cases, including carbon One or more atomic planes be not ordered into and with the chemical composition that is selected from the group being made of the following terms：Si_1- _yC_y（Y is more than 0 or 0.1 and/or less than or equal to 0.25 herein）、Si_1-x-yGe_xC_y（X is greater than or equal to 0 or 0.1 herein And/or it is less than or equal to 1, and y is more than 0 or 0.01 and/or less than or equal to 0.25）、C_1-zSn_z（Z is more than or waits herein In 0 and being less than 1, and z is 0.20 or 0.25 in one example）、Si_1-y-zC_ySn_z（Herein y be more than 0 or 0.01 and/ Or it is less than or equal to 0.25, and z is greater than or equal to 0 or 0.01 and/or less than or equal to 0.25）、Ge_1-y-zC_ySn_z（Herein Y is more than 0 or 0.01 and/or is less than or equal to 0.25, and z is greater than or equal to 0 or 0.01 and/or less than or equal to 0.25）, with And Si_1-x-y-zGe_xC_ySn_z（Herein x be greater than or equal to 0 or 0.1 and/or be less than or equal to 1, and y be more than 0 or 0.01 and/ Or it is less than or equal to 0.25, and z is greater than or equal to 0 or 0.01 and/or less than or equal to 0.25）、Si_1-x-yPb_xC_y（Herein X is greater than or equal to 0.001 or 0.01 and/or is less than or equal to 0.1, and y is greater than or equal to 0.001 or 0.01 and/or is less than Or it is equal to 0.25）、Si_1-x-y-zPb_xC_yGe_z（X is greater than or equal to 0.001 or 0.01 and/or less than or equal to 0.1 herein, and And y is more than 0 or is greater than or equal to 0.001 or 0.01 and/or is less than or equal to 0.25, and z is greater than or equal to 0.001 or 0.01 And/or it is less than or equal to 0.85 or 0.95）、Si_1-x-y-z-tPb_xC_yGe_zSn_t（Herein x be greater than or equal to 0.001 or 0.01 and/ Or it is less than or equal to 0.1, and y is more than 0 or is greater than or equal to 0.001 or 0.01 and/or is less than or equal to 0.25, and z More than or equal to 0.001 or 0.01 and/or be less than or equal to 0.85 or 0.95, and t be greater than or equal to 0.001 or 0.01 and/ Or it is less than or equal to 0.25）、Ge_1-x-yPb_xC_y（X is greater than or equal to 0.001 or 0.01 and/or less than or equal to 0.1 herein, And y is greater than or equal to 0.001 or 0.01 and/or less than or equal to 0.25）、Ge_1-x-y-zPb_xC_ySn_z（X is more than or waits herein In 0.001 or 0.01 and/or being less than or equal to 0.1, and y is more than 0 or more than or equal to 0.001 or 0.01 and/or is less than Or it is equal to 0.25, and z is greater than or equal to 0.001 or 0.01 and/or less than or equal to 0.25）.

In some cases, each include tin one or more of one or more atomic planes be ordered into and And with the chemical composition selected from the group being made of the following terms：Sn₄C、Sn₆C₂、SiSn₃C、Si₂Sn₂C、Si₃SnC、 GeSn₃C、Ge₂Sn₂C, and Ge₃SnC.In some cases, including one or more of one or more atomic planes of tin no It is being ordered into and with the chemical composition that is selected from the group being made of the following terms：Si_1-zSn_z（Herein z be more than 0 or 0.01 and/or be less than or equal to 0.1）、Ge_1-zSn_z（Z is more than 0 or 0.01 and/or less than or equal to 0.05 herein）、C_1-zSn_z （Z is more than 0 and/or is less than 1 herein, and z is 0.20 or 0.25 in one example）、Si_1-x-zGe_xSn_z（X is big herein In or equal to 0 or 0.1 and/or be less than or equal to 1, and z be more than 0 or 0.01 and/or be less than or equal to 0.1）、Si_1-y-zC_ySn_z （Y is greater than or equal to 0 or 0.01 and/or is less than or equal to 0.25 herein, and z is more than 0 or 0.01 and/or is less than or equal to 0.25）、Ge_1-y-zC_ySn_z（Y is greater than or equal to 0 or 0.01 and/or is less than or equal to 0.25 herein, and z is more than 0 or 0.01 And/or it is less than or equal to 0.25）、Si_1-x-y-zGe_xC_ySn_z（X is greater than or equal to 0 or 0.1 and/or less than or equal to 1 herein, And y is greater than or equal to 0 or 0.01 and/or is less than or equal to 0.25, and z is more than 0 or 0.01 and/or is less than or equal to 0.25）、Si_1-x-y-z-tPb_xC_yGe_zSn_t（X is greater than or equal to 0.001 or 0.01 and/or is less than or equal to 0.1, and y herein More than or equal to 0.001 or 0.01 and/or it is less than or equal to 0.25, and z is greater than or equal to 0.001 or 0.01 and/or is less than Or it is equal to 0.85 or 0.95, and t is more than 0 or more than or equal to 0.001 or 0.01 and/or less than or equal to 0.25）And Si_1-x-y-z-tPb_xC_yGe_zSn_t（Herein x be greater than or equal to 0.001 or 0.01 and/or be less than or equal to 0.1, and y be more than or Equal to 0.001 or 0.01 and/or it is less than or equal to 0.25, and z is greater than or equal to 0.001 or 0.01 and/or is less than or equal to 0.85 or 0.95, and t is more than 0 or more than or equal to 0.001 or 0.01 and/or less than or equal to 0.25）And Ge_1-x-y-zPb_xC_ySn_z（X is greater than or equal to 0.001 or 0.01 and/or is less than or equal to 0.1 herein, and y is greater than or equal to 0.001 or 0.01 and/or it is less than or equal to 0.25, and z is greater than or equal to and 0.001 or 0.01 and/or is less than or equal to 0.25）.

In some cases, including one or more of one or more atomic planes of lead be not ordered into and have The chemical composition selected from the group being made of the following terms：Si_1-xPb_x（X is more than 0 or more than or equal to 0.001 herein Or 0.01 and/or be less than or equal to 0.1）、Si_1-x-yPb_xC_y（Herein x be more than 0 or more than or equal to 0.001 or 0.01 and/ Or it is less than or equal to 0.1, and y is greater than or equal to 0.001 or 0.01 and/or less than or equal to 0.25）、Si_1-x-y-zPb_xC_yGe_z （X is more than 0 or more than or equal to 0.001 or 0.01 and/or less than or equal to 0.1 herein, and y is greater than or equal to 0.001 Or 0.01 and/or be less than or equal to 0.25, and z be greater than or equal to 0.001 or 0.01 and/or less than or equal to 0.85 or 0.95）、Si_1-x-y-z-tPb_xC_yGe_zSn_t（X and/or more than 0 or more than or equal to 0.001 or 0.01 be less than or equal to herein 0.1, and y is greater than or equal to 0.001 or 0.01 and/or is less than or equal to 0.25, and z is greater than or equal to 0.001 or 0.01 And/or it is less than or equal to 0.85 or 0.95, and t is greater than or equal to 0.001 or 0.01 and/or less than or equal to 0.25）、Ge_1- _xPb_x（X is more than 0 or more than or equal to 0.001 or 0.01 and/or less than or equal to 0.1 herein）、Ge_1-x-yPb_xC_y（At this In x be more than 0 or more than or equal to 0.001 or 0.01 and/or be less than or equal to 0.1, and y be greater than or equal to 0.001 or 0.01 and/or be less than or equal to 0.25）、Ge_1-x-y-zPb_xC_ySn_z（X is more than 0 or more than or equal to 0.001 or 0.01 herein And/or be less than or equal to 0.1, and y be greater than or equal to 0.001 or 0.01 and/or be less than or equal to 0.25, and z be more than or Equal to 0.001 or 0.01 and/or less than or equal to 0.25）.

Super crystal lattice material above can have direct band gap in the range of being suitable for the use in application above. It is generally desirable to grow these superlattices on the material of such as silicon, this is attributed to it and is commonly used in CMOS technology and/or is attributed to Low defect present in silicon is horizontal.When growing superlattices on having defective surface, these defects usually travel to super crystalline substance In lattice itself.However, the performance level of superlattices usually declines as defect level increases.It is existing when growing on a silicon substrate Superlattices when, need the relaxation with the lattice constant than the lattice constant bigger of silicon slow usually between substrate and superlattices Layer is rushed to realize direct band gap and to realize at least partly strain compensation.These buffer layers are additional defect sources.When such as When the Grown of silicon etc, many in disclosed super crystal lattice material does not need these buffer layers.Therefore, these are super brilliant Lattice are more likely to the defect level reduced.Further, the disclosed super crystal lattice material of simulation result instruction can be used to Design the superlattices with particular bandgap feature.

Further, one or more of disclosed superlattices face can be the Z points in Brillouin zone（And/or its Equivalent Y）Locate the material with maximum price band.In some cases, these materials are direct band gap materials.By these material packets Include the vertical transition in the region different from gamma point that can be provided in Brillouin zone in disclosed superlattices（In k skies Between in）With the vertical transition across hetero-junctions（In k-space）, a kind of material is in Z points wherein（And/or its equivalent Y）Place has Conduction band minimum and other also in Z points（And/or its equivalent Y）Place has maximum price band, but these materials do not have wherein There are one necessarily direct band gap materials.

It can be in entitled " the Superlattice Materials and that on October 25th, 2013 submits In Applications " and U.S. Patent Application Serial Number 61/895,971 in being hereby incorporated by reference in its entirety and also 2014 Entitled " Superlattice Materials and Applications " that on September is submitted for 23 and this is integrally incorporated with it It is found about superlattices above in PCT Patent Application PCT/US2014/057066, publication number WO 2105042610 in text Additional information.In some cases, the Si-Ge-C in above description includes superlattices, the superlattices include silicon, germanium and Carbon is made of silicon, germanium and carbon or is made of substantially silicon, germanium and carbon, and such as in U.S. Patent Application Serial Number 61/895,971 Disclosed in construct like that.

It is applied as disclosed in the context of Fig. 3 B, the contra-doping of one or more of semiconductor generates in the semiconductors Main state and/or acceptor state.In order to simplify the explanation, energy band energy diagram above it is many in do not illustrate these donor states And/or acceptor state.

In view of these introductions, for those skilled in the art, the other embodiment of the invention is combined and is repaiied Changing will be easy to happen.Therefore, the present invention is limited only by the accompanying claims, when looking into conjunction with description above and attached drawing The claim includes all such embodiments and modification when seeing.

Claims

1. a kind of electrical part, including：

The contra-doping hetero-junctions selected from the group being made of pn-junction or p-i-n junction, contra-doping knot is including the use of the main dopant of N-shaped First semiconductor of doping and the second semiconductor adulterated using the main dopant of p-type；

From by the first semiconductor and the second semiconductor group at group in the first contra-doping component by contra-doping for selecting, this first Contra-doping component is doped with one or more contra-doping agent, which has and to be included in this first anti- Adulterate the opposite polarity polarity of the main dopant in component；And

The main dopant of N-shaped, the main dopant of p-type and the one or more contra-doping agent of certain level, such that contra-doping knot is logical Phonon auxiliary mechanism is crossed to provide amplification and amplify the starting voltage having less than 1V.

2. device according to claim 1, the wherein starting voltage are more than 0.1V and are less than 0.9V.

3. device according to claim 1, wherein first semiconductor and second semiconductor are by contra-doping.

4. device according to claim 1, wherein the contra-doping agent of one or more of the first contra-doping component is total Concentration is more than the 10% of the percent of total of the dopant in the first contra-doping component and less than in the first contra-doping component The 50% of the percent of total of dopant.

5. device according to claim 4, wherein the contra-doping agent of one or more of the first contra-doping component is total Concentration is more than 2.0E17cm^-3。

6. device according to claim 5, the wherein total concentration of the main dopant in the first contra-doping component are more than packet Include the density of states for being directed to conduction band or valence band of the semiconductor in the first contra-doping component.

7. device according to claim 1 further comprises the second contra-doping component,

When the first contra-doping component is the second semiconductor, which is the first semiconductor, and

When the first contra-doping component is the first semiconductor, which is the second semiconductor.

8. device according to claim 7, wherein the contra-doping agent of one or more of the first contra-doping component is total Concentration is more than the 1% of the percent of total of the dopant in the first contra-doping component and less than in the first contra-doping component The 50% of the percent of total of dopant；And

The total concentration of one or more of second contra-doping component contra-doping agent is more than mixing in the first contra-doping component The 10% of miscellaneous dose of percent of total and 50% of the percent of total less than the dopant in the first contra-doping component.

9. device according to claim 1, wherein contra-doping is pn-junction.

10. device according to claim 1, wherein the contra-doping knot is p-i-n junction comprising in the first semiconductor and Third semiconductor between two semiconductors,

The third semiconductor is intrinsic semiconductor, and

The third semiconductor is superlattices.

11. device according to claim 1, the wherein superlattices include being repeated multiple times to form the super of the superlattices Lattice element,

Each superlattices unit has multiple orderly atomic planes parallel to each other,

At least two in atomic plane in superlattices unit have different chemical compositions, and the atom in superlattices unit One or more of face includes carbon.

12. according to device described in claim 11, including in one or more of one or more atomic planes of carbon Each include the replacement carbon more than 10%.

13. device according to claim 1, the wherein superlattices include being repeated multiple times to form the super of the superlattices Lattice element,

At least two in atomic plane in superlattices unit have the atom in different chemical compositions and superlattices unit One or more of face includes lead.

14. device according to claim 13, including in one or more of one or more atomic planes of carbon The replacement lead each included more than 10%.

15. device according to claim 1, the wherein superlattices include being repeated multiple times to form the super of the superlattices Lattice element,

At least two in atomic plane in superlattices unit have the atom in different chemical compositions and superlattices unit One or more of face includes tin.

16. device according to claim 13, including in one or more of one or more atomic planes of carbon The replacement tin each included more than 10%.

17. device according to claim 12 is less than or waits including the total number of the atomic plane in the superlattices In 20.

18. device according to claim 1, wherein the contra-doping knot are included in photodiode.

19. device according to claim 1, wherein the contra-doping knot are included in transistor.

20. device according to claim 19, the wherein transistor are tunnel transistors comprising source electrode, drain electrode and ditch Road.

21. device according to claim 20, wherein first semiconductor are source electrodes and second semiconductor is drain electrode.

22. device according to claim 19, the wherein transistor are Heterojunction Bipolar Transistors comprising emitting Base stage between pole and collector.

23. device according to claim 22, wherein the contra-doping hetero-junctions are the knots between base stage and collector.

24. device according to claim 23, wherein the contra-doping hetero-junctions is pn-junction, and is further comprised：

P-i-n hetero-junctions between base stage and collector.

25. device according to claim 1, wherein the contra-doping hetero-junctions are included in laser cavity.