CN108364609B - Pixel circuit and picture element matrix - Google Patents
Pixel circuit and picture element matrix Download PDFInfo
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- CN108364609B CN108364609B CN201710061570.5A CN201710061570A CN108364609B CN 108364609 B CN108364609 B CN 108364609B CN 201710061570 A CN201710061570 A CN 201710061570A CN 108364609 B CN108364609 B CN 108364609B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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Abstract
The present invention provides a kind of pixel circuit and picture element matrix, which includes a selection transistor, a driving transistor, a light-emitting component, a first capacitor and a reference transistor.Selection transistor is coupled to a grid line and a data line.One coordination electrode of driving transistor is coupled to selection transistor, and the first electrode of transistor is driven to be coupled to a power supply line.Light-emitting component galvanoluminescence according to provided by driving transistor.First capacitor includes being coupled to driving transistor and a transmitting signal wire.One coordination electrode of reference transistor, which is coupled to, provides a reference signal line of the adjustable voltage for switching on one first predetermined level and one second predetermined level.The first electrode of reference transistor is coupled to the coordination electrode of driving transistor.
Description
Technical field
The present invention relates to a kind of pixel circuits of display device, can compensate for critical voltage particularly with regard to one kind and change to change
The inconsistent pixel circuit of kind driving current.
Background technique
As display technology quickly develops, the display device with touch function is because of them such as visualization
Advantage becomes more and more popular.According to the relative position of touch panel and display panel, existing display device substantially can be with
It is divided into two groups, that is, (in-cell) touch panel in (on-cell) touch panel and unit on unit.With touch surface on unit
Plate is compared, and touch panel is thinner in unit and light transmittance with higher, and therefore, it has widely application.As for current
Display device, such as galvanoluminescence device, for Organic Light Emitting Diode (OLED) because it has such as self-luminous, reaction is fast,
Wide viewing angle, and it such as can make at the characteristics on flexible substrates, just more and more widely in the field of Performance Monitor
It is used.OLED display can be divided into PMOLED (passive-matrix drives OLED) and AMOLED (active square according to drive mode
Battle array driving OLED).Since its manufacturing cost is low, fast response time, DC driven low in energy consumption, as mancarried device, operation
The characteristics such as temperature range is big, the display device of AMOLED are expected to replace LCD (liquid crystal display) aobvious as next-generation novel flat-plate
Show device.Therefore, AMOLED display panel starts to become to become more and more popular.
In current AMOLED display panel, each OLED is located in identical pixel unit by multiple with OLED
The driving circuit driving that TFT (thin film transistor (TFT)) is constituted shines, to realize display.However, the critical voltage between driving TFT
Variation cause the brightness disproportionation of image shown over the display.And the consistent TFT of characteristic is obtained in entire display area
It is highly difficult.
Therefore, it is necessary to a kind of novel pixel circuit, not needing to increase excessive element i.e. in pixel circuit be can inhibit
It is influenced caused by critical voltage difference between driving TFT.
Summary of the invention
The present invention discloses a kind of pixel circuit, including a selection transistor, a driving transistor, a light-emitting component, one the
One capacitor and a reference transistor.Selection transistor includes a coordination electrode, a first electrode and a second electrode, wherein controlling
Electrode processed is coupled to a grid line, and to receive a selection signal, and first electrode is coupled to a data line.Drive transistor
Including a coordination electrode, a first electrode and a second electrode, wherein the coordination electrode of driving transistor is coupled to selection crystal
The second electrode of pipe, and the first electrode of transistor is driven to be coupled to a power supply line.Light-emitting component is coupled to driving transistor
Second electrode, and according to driving transistor provided by a galvanoluminescence.First capacitor includes being coupled to driving transistor
Coordination electrode a first end point, and be coupled to one second endpoint of a transmitting signal wire.Reference transistor includes coupling
To the coordination electrode, a first electrode and a second electrode of a reference signal line, wherein reference signal line offer is switched on
One adjustable voltage of one first predetermined level and one second predetermined level, and the first electrode of reference transistor is coupled to driving
The coordination electrode of transistor.
The present invention separately discloses a kind of picture element matrix, including has mutually isostructural pixel circuit more.Each pixel circuit includes
One selection transistor, a driving transistor, a light-emitting component, a first capacitor and a reference transistor.Selection transistor packet
A coordination electrode, a first electrode and a second electrode are included, wherein coordination electrode is coupled to a grid line, to receive a choosing
Signal is selected, and first electrode is coupled to a data line.Driving transistor includes a coordination electrode, a first electrode and one second
Electrode, wherein coordination electrode is coupled to the second electrode of selection transistor, and first electrode is coupled to a power supply line.Light-emitting component coupling
It is connected to the second electrode of driving transistor, and a galvanoluminescence according to provided by driving transistor.First capacitor includes coupling
It is connected to a first end point of the coordination electrode of driving transistor, and is coupled to one second endpoint of a transmitting signal wire.With reference to
Transistor includes the coordination electrode, a first electrode and a second electrode for being coupled to a reference signal line, wherein with reference to letter
Number line provides the adjustable voltage for switching on one first predetermined level and one second predetermined level, and the first of reference transistor
Electrode is coupled to the coordination electrode of driving transistor.The second electrode of the reference transistor of first pixel circuit is coupled to the second picture
The first capacitor of plain circuit.
The present invention separately discloses a kind of pixel circuit, including a pair of of pixel unit and selection transistor.This is to pixel unit
Including one first pixel unit and one second pixel unit.First pixel unit includes one first driving transistor, one first hair
Optical element, one first reference transistor and a first capacitor.First driving transistor includes a coordination electrode, is coupled to an electricity
A first electrode and a second electrode for source line.First light-emitting component is coupled to the second electrode of the first driving transistor, and
An and galvanoluminescence according to provided by the first driving transistor.First reference transistor includes being coupled to one first reference signal
One coordination electrode of line, be coupled to the first driving transistor coordination electrode a first electrode and a second electrode.First
Capacitor includes the first end point for being coupled to the coordination electrode of the first driving transistor, and is coupled to one first transmitting signal wire
One second endpoint.Second pixel unit includes one second driving transistor, one second light-emitting component, one second reference transistor
And one second capacitor.Second driving transistor includes a coordination electrode, the first electrode for being coupled to power supply line and one the
Two electrodes.Second light-emitting component is coupled to the second electrode of the second driving transistor, and is mentioned according to the second driving transistor
The galvanoluminescence supplied.Second reference transistor includes the coordination electrode for being coupled to one second reference signal line, is coupled to
A first electrode and a second electrode for the coordination electrode of two driving transistors.Second capacitor includes being coupled to the second driving
One first end point of the coordination electrode of transistor, and it is coupled to one second endpoint of one second transmitting signal wire.Select crystal
Pipe, including a coordination electrode, a first electrode and a second electrode, wherein coordination electrode is coupled to a grid line, to connect
A selection signal is received, first electrode is coupled to a data line, and second electrode is coupled to the control electricity of the first driving transistor
The coordination electrode of pole and the second driving transistor.The second electrode of first reference transistor is coupled to the first end of the second capacitor
Point.
Detailed description of the invention
Fig. 1 is the sample circuit diagram for showing a pixel circuit described in first embodiment according to the present invention；
Fig. 2 is to show signal waveforms described in an embodiment according to the present invention；
Fig. 3 is to show the enlarged drawing that part is enclosed in Fig. 2；
Fig. 4 A is the current -voltage curve figure for showing the driving transistor in traditional technology without critical voltage compensation；
Fig. 4 B is the electricity for showing the driving transistor described in an embodiment according to the present invention with critical voltage compensation
Stream-voltage curve；
Fig. 5 is the sample circuit diagram for showing a pixel circuit described in second embodiment according to the present invention；
Fig. 6 is to show that two pixel units described in an embodiment according to the present invention share the pixel circuit of identical grid line
Signal waveform schematic diagram；
Fig. 7 is the sample circuit diagram for showing a pixel circuit described in third embodiment according to the present invention；
Fig. 8 is to show signal waveforms described in an embodiment according to the present invention；
Fig. 9 A is the layout example for showing sub-pixel described in an embodiment according to the present invention；
Fig. 9 B is to show source-channel direction schematic diagram described in an embodiment according to the present invention；
Figure 10 is the layout example for showing pixel circuit described in an embodiment according to the present invention.
Description of symbols:
100,500,700~pixel circuit；
C1, C1_next, Cp1, Cp2, C1A, C1B, C1A_next, Cp1A, Cp2A, Cp1B, Cp2B~capacitor；
DL (m)~data line；
Em_Line (n), Em_Line (n+1), Em_LineA (n), Em_LineA (n+1), Em_LineB (n)~transmitting letter
Number line；
EM, EMA, EMB~light-emitting component；
GL (n), GL (n+1)~grid line；
PS~power supply line；
Ref_Line (n), Ref_Line (n+1), Ref_LineA (n), Ref_LineB (n)~reference signal line；
TP1, TP3, TP3A, TP3B, TP5, TP5A, TP5B, TN1, TN3, TN5~transistor；
Vbottom、Vc_TP3、Vdata、Vg、Vgref、Vout_temp、Vout、Vout_A、Vout_B、Vout_C、
Vsig, VthA, VthB, VthC, Vtop~voltage；
Δ Vth, Δ Vth ', Δ Vth "~voltage difference.
Specific embodiment
So that above and other objects, features and advantages of the invention is clearer and more comprehensible, preferred embodiment be cited below particularly out,
And cooperate attached drawing, it elaborates.
Fig. 1 is the sample circuit diagram for showing a pixel circuit described in first embodiment according to the present invention.Pixel electricity
Road 100 may include a selection transistor TP1, a driving transistor TP3, a reference transistor TP5, a light-emitting element E M and electricity
Hold C1.In first embodiment, selection transistor TP1, driving transistor TP3 and reference transistor TP5 are P-type transistor.
Selection transistor TP1 includes being coupled to a coordination electrode, coupling of the gate lines G L (n) to receive a selection signal
It is connected to a first electrode and a second electrode of a data line DL (m).Driving transistor TP3 includes being coupled to selection crystal
One coordination electrode of the second electrode of pipe TP1, the first electrode and a second electrode for being coupled to a power supply line PS.It shines
Element EM, such as an OLED are coupled to the second electrode of driving transistor TP3, and according to provided by driving transistor TP3
One galvanoluminescence.Capacitor C1 includes the first end point for being coupled to the coordination electrode of driving transistor TP3, and is coupled to a hair
Penetrate one second endpoint of signal wire Em_Line (n).Reference transistor TP5 includes a coordination electrode, a first electrode and one the
Two electrodes.The coordination electrode of reference transistor TP5 is coupled to reference signal line Ref_Line (n).The first of reference transistor TP5
Electrode is coupled to the coordination electrode of driving transistor TP3, and the second electrode of reference transistor TP5 is coupled to next pixel
The capacitor C1_next of circuit.It is worth noting that, next pixel circuit and pixel circuit 100 include identical element and
Structure having the same.An embodiment according to the present invention, it is set that reference signal line Ref_Line (n) offer switches on one first
One adjustable voltage of level and one second predetermined level.
In an embodiment of the present invention, can there are N*M pixel circuit, such as pixel circuit shown in FIG. 1 100, Yu Xian
An array is arranged in showing device, to form picture element matrix, wherein n, m, N and M are positive integer, and 0≤n≤N, 0≤m≤M.
It is worth noting that, in an embodiment of the present invention, the column pixel circuit in picture element matrix is (for example, the last column pixel electricity
Road) it may be designed as the pixel circuit of redundancy.
Fig. 2 is to show signal waveforms described in an embodiment according to the present invention.As shown in Fig. 2, in gate lines G L (n)
On selection signal pulse arrive at before, the voltage on reference signal line Ref_Line (n) can be by the second predetermined level (for example,+6
Volt) it is set below the first predetermined level (for example, 0 volt) of the second predetermined level.An embodiment according to the present invention,
Before selection signal pulse arrival, when the voltage on reference signal line Ref_Line (n) is set with the second predetermined level
When, reference transistor TP5 is closed, and the voltage on reference signal line Ref_Line (n) had been set with first both
When determining level, reference transistor TP5 is switched on.
In addition, can produce in transmitting signal wire Em_Line (n) before the selection signal pulse on gate lines G L (n) is arrived at
One pulse risen or voltage, the voltage for emitting signal wire Em_Line (n) is set as top voltage Vtop.According to this
One embodiment of invention, top voltage Vtop can be set to close to+6 volts, and power supply line PS is designed to provide 0 volt
Voltage special or close to 0 volt.At this point, reference transistor TP5 is switched on, and transistor TP3 is driven to be closed.
When the selection signal pulse on gate lines G L (n) is arrived at (for example, the pulse on gate lines G L (n) as shown in the figure
Falling edge), selection transistor TP1 is switched on, and the data voltage on data line DL (m) is transferred into driving transistor
The coordination electrode of TP3 and the first electrode of reference transistor TP5.An embodiment according to the present invention, due to reference transistor
TP5 is switched on when the voltage on reference signal line Ref_Line (n) is set with the first predetermined level, therefore when selection
When transistor TP1 is switched on, data voltage Vdata can be provided to the capacitor for being coupled to the first electrode of reference transistor TP5
C1, and can also be provided to the capacitor C1_ of the next pixel circuit for the second electrode for being coupled to reference transistor TP5
next.In this way, which data voltage Vdata can be stored in capacitor C1 and C1_next when reference transistor TP5 is switched on.
When the selection signal end-of-pulsing on gate lines G L (n) (for example, the pulse on gate lines G L (n) as shown in the figure
Rising edge after), selection transistor TP1 is closed, and capacitor C1 and C1_next can be closed in selection transistor TP1
Data voltage Vdata is stored afterwards.An embodiment according to the present invention, data voltage Vdata can correspond to a vision signal, to
It is shown in a respective pixel, and its voltage range can be distributed from white level is represented to the level for representing black, example
Such as, between 3 volts to 4 volts of voltage range.After selection signal end-of-pulsing, reference transistor TP5 is switched on, and is driven
Transistor TP3 is closed (voltage of power supply line PS is set to 0 volt).
After selection transistor TP1 is closed, the voltage in transmitting signal wire Em_Line (n) can be reduced to, such as -3 volts
Spy, in generating a voltage change or voltage conversion in transmitting signal wire Em_Line (n) (that is, in this example, from high electricity
Flat turn shifts to a low level pressure drop).In response to the voltage change or voltage conversion in this transmitting signal wire Em_Line (n), driving
The voltage Vc_TP3 of the coordination electrode of transistor TP3 also can be equally changed (part that such as Fig. 2 is enclosed), and there is compensation to face
The effect of boundary voltage Vth.For example, voltage Vc_TP3 can be pulled low about 7 volts, so that driving transistor TP3 is switched on, with
Provide current to light-emitting element E M.
After the voltage conversion in transmitting signal wire Em_Line (n), the voltage on reference signal line Ref_Line (n) can
Being reset back has the second predetermined level (for example,+6 volts).It is worth noting that, in an embodiment of the present invention, with reference to letter
Voltage on number line Ref_Line (n) is believed in selection in can be set with the first predetermined level in a frame period
Feel the pulse punching and transmitting signal pulse provide after reset back to the second predetermined level.Thereafter, reference transistor TP5 can be closed
It closes.
This operation can be in sequentially and being repeatedly performed, to show an image (it is worth noting that, voltage Vc_ in array
The dotted line of TP3 starting is the signal waveform to represent previous frame, can be high signals or low signal).
Since the voltage in transmitting signal wire Em_Line (n) is reduced to about -3 volts by about+6 volts, reference transistor
The voltage of the first electrode of TP5 also correspondingly can be reduced to about 0~(- 3) volt, and reference transistor from about 3~4 volts
TP5 can be switched by state is in off state (that is, switching to be closed by being switched on).
Fig. 3 is to show the enlarged drawing that part is enclosed in Fig. 2.When the voltage in transmitting signal wire Em_Line (n) is begun to decline
When, drive the voltage Vc_TP3 in the coordination electrode of transistor TP3 that can also decline therewith.When the control electricity of driving transistor TP3
Voltage Vc_TP3 on extremely drop to a set switching point (such as in Fig. 3 reference transistor TP5 by cutting of being converted to close off is connected
Change point (TP5 switching point)) voltage when, reference transistor TP5 can be closed (since Vgs undertension is to be connected reference transistor
TP5).Therefore, in an embodiment of the present invention, in voltage change or transition period, reference transistor TP5 can be by being switched on switching
To be closed.
It is seen by the coordination electrode of driving transistor TP3, when reference transistor TP5 is switched to closing by being connected, is connected
Capacitance (C1+ α) is converted to by [(C1+ α)+(C2+ α)], wherein assume capacitor C1 capacitance be formula in C1, be coupled to
The capacitance of the capacitor C1_next of another pixel circuit of the second electrode of reference transistor TP5 is C2, an and pixel circuit
In equivalent capacity amount provided by all parasitic capacitances (for example, parasitic capacitance Cp1 and Cp2 shown in FIG. 1) be α.Capacitance
The critical voltage value of conversion time point and reference transistor TP5 | Vth | it is related.
Assuming that in an embodiment of the present invention, capacitor C1 and capacitor C1_next capacitance having the same.When driving crystal
Voltage Vc_TP3 in the coordination electrode of pipe TP3 passes through | Vth | when level (wherein | Vth | it is the critical electricity of reference transistor TP5
Pressure), because there is no the influence of capacitor (C2+ α), this voltage decreasing rate of Δ Voff becomes this twice of Δ Von, wherein
Δ Von this represents in the voltage difference of top voltage Vtop and switching point voltage in transmitting signal wire Em_Line (n), Δ
This is represented in the voltage difference of switching point voltage and bottom voltage Vbottom in transmitting signal wire Em_Line (n) Voff, is cut
Changing point (TP5 switching point) voltage is the voltage that reference voltage TP5 is switched to closing by being connected.
Drive the derivation of the final voltage Vout in the coordination electrode of transistor TP3 as follows.
In Fig. 3, dotted line, which represents, works as under reference transistor TP5 holding state switched on (that is, not switching to closed state),
Drive the temporary waveform of the voltage in the coordination electrode of transistor TP3.
Under this situation, the temporary final voltage Vout_temp in the coordination electrode of transistor TP3 is driven (to work as reference
Transistor TP5 keeps being switched on) be to decline from the level of data voltage Vdata | Δ Von+ Δ Voff | * [(C1+ α)/(C1+C2+
2 α)], it is notable that work as C1=C2, (C1+ α)/(C1+C2+2 α)=1/2 can be obtained.Therefore, it can be obtained temporary final
Voltage are as follows:
Vout_temp=Vdata- | Δ Von+ Δ Voff |/2 formulas (1)
It is worth noting that, when reference transistor TP5 keep be switched on when, | Vth | this and be not included in it is temporary most
In whole voltage Vout_temp.In this way, which whole operation can not compensate the variation of critical voltage.
On the other hand, according to an embodiment of the invention, reference transistor TP5 can be closed in switching point as shown in Figure 3.When
Across pedestals as shown in Figure 3 | Vth | when+Vgref, drive the voltage Vc_TP3's in the coordination electrode of transistor TP3
Fall off rate is twice of temporary voltage (dotted line shown in Fig. 3), wherein | Vth | it is the critical voltage of reference transistor TP5, and
Vgref is the voltage with the first predetermined level for being provided to the coordination electrode of reference transistor TP5.
Therefore, it is as follows that final voltage Vout can be obtained:
Vout=(| Vth |+Vgref) -2* ((| Vth |+Vgref)-Vout_temp)
=(| Vth |+Vgref) -2* ((| Vth |+Vgref)-(Vdata- | Δ Von+ Δ Voff |/2))
=2*Vdata- | Δ Von+ Δ Voff |-(| Vth |+Vgref) formula (2)
It is worth noting that, | Vth | this is contained in final voltage Vout, to compensate the variation of critical voltage.?
Under the premise of transistor in same pixel circuit has identical critical voltage, by by the critical voltage of reference transistor TP5 |
Vth | this parameter is added in the final voltage Vout of the coordination electrode of driving transistor TP3, can compensate for the variation of critical voltage.
More specifically, since reference transistor TP5 is P-type transistor, the final voltage in (2) formula can further by
It derives as follows:
Vout=2*Vdata+ (Vem_on-Vem_off)+(Vth-Vgref) formula (2-1)
Wherein Vem_off is represented in transmitting pulse voltage (the i.e. above-mentioned top voltage in voltage Vdata input period
Vtop), Vem_on is represented in the transmitting pulse voltage (i.e. above-mentioned bottom voltage Vbottom) of transmit cycle.
The drain-source electrode current Ids (TP3) as provided by driving transistor TP3 is by lock-source electrode of driving transistor TP3
Voltage Vgs (TP3) is controlled.
In general, Ids electric current can be derived as follows using transistor current approximate expression:
Ids=W/L*Co* μ * (Vgs-Vth-1/2*Vds) * Vds is when (Vds < Vgs-Vth) formula (2-2)
Ids=W/L*Co* μ * 1/2* (Vgs-Vth) ^2 is when (Vds >=Vgs-Vth) formula (2-3)
Wherein W represents channel width, and L represents channel length, and Co represents every list as the capacitance of gate area, and μ, which is represented, to be moved
Dynamic rate, Vgs represent lock-source voltage, and Vds represents drain-source voltage.
Due to for the driving current of OLED, being the isolated area using Vds, therefore use (Vds >=Vgs-
Vth formula).Therefore, it can derive that Ids is proportional to square (Ids ∝ (Vgs-Vth) ^2) of (Vgs-Vth).
Vgs (TP3)=Vg (TP3)-Vs (TP3)
=Vout-Vs (TP3)
=2*Vdata+ (Vem_on-Vem_off)+(Vth (TP5)-Vgref)-Vs (TP3)
=2*Vdata+ (Vem_on-Vem_off)-Vgref-Vs (TP3)+Vth (TP5) formula (2-4)
Therefore, the Ids electric current Ids (TP3) as provided by driving transistor TP3 can be derived as follows:
Ids(TP3)∝(2*Vdata+(Vem_on-Vem_off)-Vgref-Vs(TP3)+Vth(TP5)-Vth(TP3))^
2 formulas (2-5)
When the transistor of pixel critical voltage having the same, that is, when Vth (TP5)=Vth (TP3), Vth this
The variation of critical voltage can be can compensate for by being removed in Ids.
Therefore, the voltage Vc_TP3 of the coordination electrode of transistor TP3 is driven not will receive the influence of critical voltage variation, nothing
How to be changed by critical voltage, to drive the electric current of light-emitting element E M that can be kept fixed produced by driving transistor TP3.
Fig. 4 A is the current -voltage curve figure for showing the driving transistor in traditional technology without critical voltage compensation, wherein
Voltage Vg represents the driving voltage for being provided in drive the coordination electrode of transistor in traditional technology, and I is represented by driving transistor institute
The driving current of generation.Assuming that three transistors TFTA, TFTB and TFTC have different critical voltage VthA, VthB with
VthC.Define voltage Vsig=2*Vdata- | Δ Von+ Δ Voff |-Vgref, then by can be seen that in Fig. 4 A in identical voltage
Under Vsig, due to critical voltage difference, three transistors will export different driving currents to drive light-emitting element E M, cause to show
Show the inconsistent problem of picture.
Fig. 4 B is the electricity for showing the driving transistor described in an embodiment according to the present invention with critical voltage compensation
Stream-voltage curve, wherein voltage Vc_TP3 represents the driving voltage for being provided in drive the coordination electrode of transistor TP3, and I is represented
The driving current as caused by driving transistor.By can be seen that the final of the coordination electrode due to driving transistor TP3 in Fig. 4 B
Voltage Vout passes through addition as shown in following formula (3)~(5) | Vth | item compensates for the variation of critical voltage
Vout_A=Vsig- | VthA | formula (3)
Vout_B=Vsig- | VthB | formula (4)
Vout_C=Vsig- | VthC | formula (5)
In this way, which the consistent display picture of electric current/brightness can be obtained.
It is worth noting that, concept according to the present invention, even if different pixels circuit is (that is, picture different in picture element matrix
Element) between critical voltage difference when, in these pixel circuits produced by drive the electric current of light-emitting component that can remain identical, and
And the image frame of entire display area can maintain consistency.In this way, can solve in traditional design between different pixels because facing
The inconsistent problem of display picture caused by boundary's variation in voltage.
Furthermore it is noted that in an embodiment of the present invention, when making picture element matrix, by each pixel circuit
In as all parasitic capacitances (for example, the control of Cp1 shown in FIG. 1 and capacitance provided by Cp2) for be mutually all it is best, such one
The variation of critical voltage can be compensated as described above.
Fig. 5 is the sample circuit diagram for showing a pixel circuit described in second embodiment according to the present invention.In second
In embodiment, picture element matrix may include multipair pixel unit.For example, Fig. 5 is to show a pair of of pixel unit.Pixel circuit
500 may include the first pixel unit and the second pixel unit.First pixel unit may include driving transistor TP3A, reference crystal
Pipe TP5A, capacitor C1A and light-emitting element E MA.Second pixel unit may include driving transistor TP3B, reference transistor
TP5B, capacitor C1B and light-emitting element E MB.In second embodiment, selection transistor TP1 is by along data line direction phase
Two pixel units of neighbour's configuration share.In addition, two pixel units share identical grid line.
Driving transistor TP3A may include the coordination electrode for being coupled to capacitor C1A, be coupled to power supply line PS one first
Electrode and a second electrode.Light-emitting element E MA, such as Organic Light Emitting Diode (OLED) are coupled to driving transistor TP3A
Second electrode, and according to driving transistor TP3A provided by a galvanoluminescence.Driving transistor TP3B may include coupling
To capacitor C1B a coordination electrode, be coupled to a first electrode and a second electrode of power supply line PS.Light-emitting element E MB,
Such as Organic Light Emitting Diode (OLED), it is coupled to the second electrode of driving transistor TP3B, and according to driving transistor
A galvanoluminescence provided by TP3B.
Selection transistor TP1 includes a coordination electrode, a first electrode and a second electrode, wherein selection transistor
The coordination electrode of TP1 is coupled to gate lines G L (n), to receive a selection signal, the first electrode coupling of selection transistor TP1
Second electrode (by reference to transistor TP5A) to data line DL (m), and selection transistor TP1 is coupled to driving transistor
The coordination electrode of TP3A and the coordination electrode for driving transistor TP3B.Reference transistor TP5A includes a coordination electrode, one the
One electrode and a second electrode, wherein the coordination electrode of reference transistor TP5A is coupled to reference signal line Ref_LineA
(n), the first electrode of reference transistor TP5A is coupled to the coordination electrode of driving transistor TP3A, and the of reference transistor TP5A
Two electrodes are coupled to the coordination electrode of driving transistor TP3B.Reference transistor TP5B includes a coordination electrode, a first electrode
And a second electrode, wherein the coordination electrode of reference transistor TP5B is coupled to reference signal line Ref_LineB (n), reference
The first electrode of transistor TP5B is coupled to the coordination electrode of driving transistor TP3B, the second electrode coupling of reference transistor TP5B
It is connected to the capacitor C1A_next of next pixel circuit.
Capacitor C1A includes the first end point for being coupled to the coordination electrode of driving transistor TP3A, and is coupled to transmitting letter
The second endpoint of number line Em_LineA (n).Capacitor C1B includes the first end for being coupled to the coordination electrode of driving transistor TP3B
Point, and it is coupled to the second endpoint of transmitting signal wire Em_LineB (n).
In an embodiment of the present invention, can there are N*M pixel circuit, such as pixel circuit shown in fig. 5 500, Yu Xian
An array is arranged in showing device, to form picture element matrix, wherein n, m, N and M are positive integer, and 0≤n≤N, 0≤m≤M.
It is worth noting that, in an embodiment of the present invention, the column pixel unit in picture element matrix is (for example, the last column pixel list
Member) it may be designed as the pixel circuit of redundancy.
Fig. 6 is shown described in an embodiment according to the present invention as included that two pixel units share identical grid in Fig. 5
The signal waveform schematic diagram of the pixel circuit of line.An embodiment according to the present invention, since two pixel units share identical grid
Polar curve can provide two selection signal pulses on gate lines G L (n) in succession.The circuit of pixel circuit 500 is run and compensation mechanism
It is identical with pixel circuit 100.
As shown in fig. 6, in reference signal line Ref_LineA (n) voltage in being set to first in the first level period
Predetermined level emits the voltage on signal wire Em_LineA (n) and is set to top reference transistor TP5A is connected
After voltage Vtop, in offer first selection signal pulse on gate lines G L (n) (for example, first pulse on gate lines G L (n)
Falling edge), selection transistor TP1 (being connected for the first time) is connected.When selection transistor TP1 is switched on and (is connected for the first time)
Afterwards, data voltage Vdata can be transferred into capacitor C1A and C1B.
(that is, as shown in the figure on gate lines G L (n) after first selection signal end-of-pulsing on gate lines G L (n)
After first pulse rising edge), selection transistor TP1 is closed and (closes for the first time).After selection transistor TP1 is closed,
Voltage in transmitting signal wire Em_LineA (n) is reduced to bottom voltage Vbottom from top voltage Vtop, in transmitting
A voltage change is generated on signal wire Em_LineA (n) or voltage conversion (that is, in this example, is converted from high level to low electricity
A flat pressure drop).In response to the voltage change or voltage conversion in this transmitting signal wire Em_LineA (n), transistor TP3A is driven
The voltage of coordination electrode also can equally be changed, and have the effect of such as above-mentioned compensation critical voltage Vth.Then, it drives
Transistor TP3A is switched on, to provide current to light-emitting element E MA.Thereafter, the voltage quilt of reference signal line Ref_LineA (n)
Reset back to the second predetermined level.
Then, the voltage of reference signal line Ref_LineB (n) is in being set to the first set electricity in the second horizontal cycle
It is flat.The first predetermined level is set to reference transistor TP5B is connected in the voltage of reference signal line Ref_LineB (n),
And emit after the voltage on signal wire Em_LineB (n) is set to top voltage Vtop, in providing the on gate lines G L (n)
Two selection signal pulses (for example, the twoth pulse falling edge on gate lines G L (n)), selection transistor to be connected again
TP1 (second of conducting).After selection transistor TP1 is switched on (second of conducting), data voltage Vdata can be transferred into electricity
Hold the capacitor C1A_next of C1B and next pixel circuit.
(that is, as shown in the figure on gate lines G L (n) after the second selection signal end-of-pulsing on gate lines G L (n)
After twoth pulse rising edge), selection transistor TP1 is closed (second of closing).After selection transistor TP1 is closed,
Voltage in transmitting signal wire Em_LineB (n) is reduced to bottom voltage Vbottom from top voltage Vtop, in transmitting
A voltage change is generated on signal wire Em_LineB (n) or voltage conversion (that is, in this example, is converted from high level to low electricity
A flat pressure drop).
In response to the voltage change or voltage conversion in this transmitting signal wire Em_LineB (n), the control of transistor TP3B is driven
The voltage of electrode processed also can be equally changed, and have the effect of such as above-mentioned compensation critical voltage Vth.Then, crystal is driven
Pipe TP3B is switched on, to provide current to light-emitting element E MB.Thereafter, the voltage of reference signal line Ref_LineB (n) is reset
Return the second predetermined level.
Since the compensation mechanism of pixel circuit 500 is similar to pixel circuit 100, related description can refer to the detailed of Fig. 3
It describes in detail bright, and is repeated no more in this.
It is worth noting that, in an embodiment of the present invention, when making picture element matrix, by each pixel circuit by institute
There is the control of capacitance provided by parasitic capacitance (for example, Cp1A shown in fig. 5 and Cp2A and Cp1B and Cp2B) to be mutually all
Most preferably, the variation of critical voltage can be thus compensated as described above.
In the first embodiment of the present invention, when reference transistor TP5 conducting, the capacitor of next pixel circuit is utilized
C1_next provides capacitance when pixel circuit 100 is run.Similarly, in the second embodiment of the present invention, work as reference crystal
When pipe TP5A is connected, the capacitor C1B of the second pixel unit is providing capacitance when the operation of the first pixel circuit, and when ginseng
When examining transistor TP5B conducting, the capacitor C1A_next of next pixel unit is to provide electricity when the operation of the second pixel circuit
Capacity.
Based on above-mentioned operation, by critical voltage | Vth | it is contained in the final voltage Vout of driving transistor, to compensate
The variation of critical voltage.In this way, which no matter how critical voltage Vth changes, to drive hair as produced by driving transistor
The magnitude of current of optical element can all remain identical.Above-mentioned compensation mechanism is equally applicable for becoming when the critical voltage of different pixels circuit
Different situations is measured in change.In this way, which display can have consistent driving current/brightness.
In addition, each pixel unit (in addition to the pixel unit of redundancy) can be in complete in the second embodiment of the present invention
It shines in the frame period.Therefore, compared to the design of other common gate polar curves, in second embodiment, less driving current
It can be drawn, and OLED material can have a longer life expectancy.This is because in the design of other common gate polar curves, for example, will
One grid line is shared by two pixel units, and each pixel unit is caused to be only capable of in shining in half of frame period, therefore, each picture
OLED light-emitting component in plain unit results in the need for interrogating in half in the brightness for having to launch twice in half of frame period
The electric current compared to twice of the second embodiment of the present invention is drawn in the frame period.Electric current is bigger, will make to OLED light-emitting component
The damage of Cheng Yue great, thus shorten its service life.Therefore, it compared to this kind of design, in the second embodiment of the present invention, can draw
Less driving current is taken, the service life of OLED material is effectively extended.
Fig. 7 is the sample circuit diagram for showing a pixel circuit described in third embodiment according to the present invention.Yu Benfa
In bright 3rd embodiment, selection transistor TN1, driving transistor TN3 and reference transistor TN5 are N-type transistor, and such as
Power supply line PS shown in FIG. 1 can be launched signal wire and replace or be connected to transmitting signal wire (therefore, by transmitting signal wire Em_
Line (n) indicates it).
Selection transistor TN1 includes being coupled to a coordination electrode, coupling of the gate lines G L (n) to receive a selection signal
It is connected to a first electrode and a second electrode of a data line DL (m).Driving transistor TN3 includes being coupled to selection crystal
One coordination electrode of the second electrode of pipe TN1, the first electrode and one second for being coupled to transmitting signal wire Em_Line (n)
Electrode.Light-emitting element E M, such as an OLED are coupled to the second electrode of driving transistor TN3, and according to driving transistor
A galvanoluminescence provided by TN3.Capacitor C1 includes the first end point for being coupled to the coordination electrode of driving transistor TN3, with
And it is coupled to one second endpoint of a transmitting signal wire Em_Line (n).Reference transistor TN5 includes a coordination electrode, one first
Electrode and a second electrode.The coordination electrode of reference transistor TN5 is coupled to reference signal line Ref_Line (n).With reference to crystalline substance
The first electrode of body pipe TN5 is coupled to the coordination electrode of driving transistor TN3, and the second electrode coupling of reference transistor TN5
It is connected to the capacitor C1_next of next pixel circuit.It is worth noting that, next pixel circuit includes with pixel circuit 700
Identical element and structure having the same.An embodiment according to the present invention, reference signal line Ref_Line (n) offer are cut
It changes in an adjustable voltage of one first predetermined level and one second predetermined level.
In an embodiment of the present invention, can there are N*M pixel circuit, such as pixel circuit shown in Fig. 7 700, Yu Xian
An array is arranged in showing device, to form picture element matrix, wherein n, m, N and M are positive integer, and 0≤n≤N, 0≤m≤M.
It is worth noting that, in an embodiment of the present invention, the column pixel circuit in picture element matrix is (for example, the last column pixel electricity
Road) it may be designed as the pixel circuit of redundancy.
Fig. 8 is to show signal waveforms described in an embodiment according to the present invention.As shown in figure 8, in gate lines G L (n)
On selection signal pulse arrive at before, the voltage on reference signal line Ref_Line (n) can be by the second predetermined level (for example, 0 volt
It is special) it is set to be higher than the first predetermined level (for example,+6 volts) of the second predetermined level.An embodiment according to the present invention,
Before selection signal pulse arrival, when the voltage on reference signal line Ref_Line (n) is set with the second predetermined level
When, reference transistor TN5 is closed, and the voltage on reference signal line Ref_Line (n) had been set with first both
When determining level, reference transistor TN5 is switched on.In addition, before the selection signal pulse on gate lines G L (n) is arrived at, transmitting letter
It can produce pulse or the voltage of a decline on number line Em_Line (n), and after selection signal end-of-pulsing, emit signal wire
Voltage on Em_Line (n) can be from low transition to high level.Selection signal in this embodiment, on gate lines G L (n)
Pulse is high-order enabled (active high) pulse, selection transistor TN1 is connected.Other operation sides of pixel circuit 700
Formula and pixel circuit 100 are identical, therefore related content repeats no more.Further, since the compensation mechanism of pixel circuit 700 is similar to
Pixel circuit 100, therefore related description can refer to the detailed description of Fig. 3, and repeat no more in this.
It is worth noting that, the structure taught according to Fig. 7, N-type transistor may be alternatively used for multipair pixel as shown in Figure 5
In the embodiment of units shared selection transistor.Whom knows this those skilled in the art due to without departing from the spirit and scope of the present invention can be light
It easily derives embodiments thereof, therefore for the sake of concise description, is repeated no more in this.
Fig. 9 A is the layout example for showing sub-pixel described in an embodiment according to the present invention.Figure 10 is display basis
The layout example of pixel circuit described in one embodiment of the invention.As above-mentioned, in an embodiment of the present invention, crystal is driven
Pipe TP3/TN3 and reference transistor TP5/TN5 critical voltage Vth having the same.In this pixel layout figure, Fig. 9 A is enclosed
Part shows the part to determine the critical voltage Vth of driving transistor TP3 and reference transistor TP5, i.e. " source electrode-ditch
Road junction ".
Fig. 9 B is an enlarged drawing, to show source-channel direction described in an embodiment according to the present invention.For making
With by laser annealing processing procedure (laser annealing process) mode and laser lift-off (laser lift-off) mode system
For the pixel circuit of the TFT of work, in order to inhibit laser trace (laser mura), transistor TP3 and TP5 in a pixel circuit
Source-channel junction must be configured to be located at identical laser pulse pitch area (laser as shown in Fig. 9 A and 9B figure
Pulse pitch area), and it is aligned in identical source-channel direction.Therefore, it in a pixel circuit unit, drives
Transistor TP3 is coupled to the electrode side (for example, source electrode of driving transistor TP3) of voltage source PS (alternatively, driving transistor TN3
Be coupled to the electrode side of light-emitting component) and reference transistor TP5 be coupled to the electrode side of capacitor C1_next (for example, with reference to brilliant
The source electrode of body pipe TP5) (alternatively, electrode side that reference transistor TN5 is coupled to capacitor C1_next) be configured be located at it is identical swash
Light pulse pitch area, and it is aligned in identical source-channel direction.
It is worth noting that, in laser annealing processing procedure, laser pulse for example, 300 hertz, is launched with a frequency
To substrate of glass.In polycrystallization processing procedure, when being displaced into substrate, a laser injection (laser shot) can be in same
Position is implemented repeatedly, such as 20 times.Assuming that the laser pulse light beam of injection is, for example, 300 millimeters (length) * 0.6 millimeter (width),
Then 0.6 millimeter of (width)/20=30 (micron) is the moving distance of each injection, referred to herein as laser pulse spacing (laser pulse
pitch).The energy intensity variation of each laser pulse injection greatly, causes the critical voltage characteristic of transistor between laser pulse
Away from change (laser trace (laser mura)).
As above-mentioned, according to the image element circuit structure that above multiple embodiments are proposed, by by the critical of reference transistor
Voltage | Vth | it is contained in the final voltage Vout of the coordination electrode of driving transistor, effective compensation threshold voltage variations.Such one
Come, in traditional design between different pixels as threshold voltage variations and caused by the inconsistent problem of picture can effectively be solved
Certainly.
Not implied using itself to the ordinal numbers such as " first " of modified elements, " second ", " third " in claim
Any priority, order of priority, step performed by precedence or method between each element order, and be used only as marking
Know to distinguish the different elements with same names (with different ordinal numbers).
Although the present invention has been described by way of example and in terms of the preferred embodiments, however, it is not to limit the invention, any to be familiar with this
Those skilled in the art, without departing from the spirit and scope of the present invention, when a little variation and retouching, therefore protection scope of the present invention can be done
Subject to view appended claims institute defender.
Claims (20)
1. a kind of pixel circuit, comprising:
One selection transistor, including a coordination electrode, a first electrode and a second electrode, wherein the coordination electrode is coupled to one
Grid line, to receive a selection signal, and the first electrode is coupled to a data line；
One driving transistor, including a coordination electrode, a first electrode and a second electrode, wherein the coordination electrode is coupled to this
The second electrode of selection transistor, and the first electrode is coupled to a power supply line；
One light-emitting component is coupled to the second electrode of the driving transistor, and one according to provided by the driving transistor
Galvanoluminescence；
One first capacitor, a first end point of the coordination electrode including being coupled to the driving transistor, and it is coupled to a hair
Penetrate one second endpoint of signal wire；And
One reference transistor, a coordination electrode, a first electrode and a second electrode including being coupled to a reference signal line,
Wherein the reference signal line provides the adjustable voltage for switching on one first predetermined level and one second predetermined level, and the ginseng
The first electrode for examining transistor is coupled to the coordination electrode of the driving transistor:
Wherein the pixel circuit is contained in a picture element matrix, and the second electrode of the reference transistor is coupled to one second
Capacitor, wherein second capacitor is contained in another pixel circuit in the picture element matrix.
2. pixel circuit as described in claim 1, wherein the data when the selection transistor is switched on, on the data line
Voltage is provided to the reference transistor, and when the reference transistor is switched on, the data voltage be stored in this first
Capacitor and second capacitor.
3. pixel circuit as claimed in claim 2, wherein when the selection transistor is closed, on the transmitting signal wire one
Voltage generates variation, and during the voltage change, which is closed by being switched on to be switched to.
4. pixel circuit as claimed in claim 3, wherein because the voltage change on signal wire should be emitted, the driving crystal
One voltage of the coordination electrode of pipe is varied so that the driving transistor is switched on, to provide the electric current to the light-emitting component.
5. pixel circuit as claimed in claim 3, wherein the driving transistor and the reference transistor are P-type transistor, and
And after the selection transistor is closed, the voltage on the transmitting signal wire is changed into low-voltage electricity by a high-voltage level
It is flat.
6. pixel circuit as claimed in claim 3, wherein the driving transistor and the reference transistor are N-type transistor, and
And after the selection transistor is closed, the voltage on the transmitting signal wire is changed into high voltage electricity by a low voltage level
It is flat.
7. pixel circuit as described in claim 1, a wherein source-channel junction Yu the reference crystal for the driving transistor
One source-channel junction of pipe is located at identical laser pulse pitch area, and is aligned in identical source-channel direction.
8. a kind of picture element matrix, comprising:
It is multiple that there is mutually isostructural pixel circuit, wherein each pixel circuit includes:
One selection transistor, including a coordination electrode, a first electrode and a second electrode, wherein the coordination electrode is coupled to
One grid line, to receive a selection signal, and the first electrode is coupled to a data line；
One driving transistor, including a coordination electrode, a first electrode and a second electrode, wherein the coordination electrode is coupled to this
The second electrode of selection transistor, the first electrode are coupled to a power supply line；
One light-emitting component is coupled to the second electrode of the driving transistor, and one according to provided by the driving transistor
Galvanoluminescence；
One first capacitor, a first end point of the coordination electrode including being coupled to the driving transistor, and it is coupled to a hair
Penetrate one second endpoint of signal wire；And
One reference transistor, a coordination electrode, a first electrode and a second electrode including being coupled to a reference signal line,
Wherein the reference signal line provides the adjustable voltage for switching on one first predetermined level and one second predetermined level, and the ginseng
The first electrode for examining transistor is coupled to the coordination electrode of the driving transistor,
And wherein the second electrode of the reference transistor of one first pixel circuit is coupled to being somebody's turn to do for one second pixel circuit
First capacitor.
9. picture element matrix as claimed in claim 8, wherein the first capacitor of first pixel circuit and second pixel are electric
The first capacitor capacitance having the same on road.
10. picture element matrix as claimed in claim 8, wherein when the selection transistor of first pixel circuit is switched on,
A data voltage on the data line is provided to the reference transistor of first pixel circuit, and when first pixel electricity
When the reference transistor on road is switched on, the data voltage be stored in first pixel circuit the first capacitor and this second
The first capacitor of pixel circuit.
11. picture element matrix as claimed in claim 8, wherein when the selection transistor of first pixel circuit is closed,
A voltage on the transmitting signal wire of first pixel circuit generates variation, and during the voltage change, first picture
The reference transistor of plain circuit is closed by being switched on to be switched to.
12. picture element matrix as claimed in claim 8, wherein because the voltage change on signal wire should be emitted, first picture
One voltage of the coordination electrode of the driving transistor of plain circuit is varied so that the driving crystal of first pixel circuit
Pipe is switched on, to provide the light-emitting component of the electric current to first pixel circuit.
13. picture element matrix as claimed in claim 8, the wherein one source electrode-ditch of the driving transistor of first pixel circuit
One source-channel junction of the reference transistor of road junction and first pixel circuit is located at identical laser pulse spacing area
Domain, and it is aligned in identical source-channel direction.
14. a kind of pixel circuit, comprising:
A pair of of pixel unit, including one first pixel unit and one second pixel unit, wherein first pixel unit include:
One first driving transistor, including a coordination electrode, be coupled to a power supply line a first electrode and one second electricity
Pole；
One first light-emitting component is coupled to the second electrode of the first driving transistor, and according to the first driving crystal
A galvanoluminescence provided by managing；
One first reference transistor, including being coupled to a coordination electrode of one first reference signal line, being coupled to first driving
A first electrode and a second electrode for the coordination electrode of transistor；And
One first capacitor, a first end point of the coordination electrode including being coupled to the first driving transistor, and be coupled to
One second endpoint of one first transmitting signal wire, and wherein second pixel unit includes:
One second driving transistor, including a coordination electrode, be coupled to the power supply line a first electrode and one second electricity
Pole；
One second light-emitting component is coupled to the second electrode of the second driving transistor, and according to the second driving crystal
A galvanoluminescence provided by managing；
One second reference transistor, including being coupled to a coordination electrode of one second reference signal line, being coupled to second driving
A first electrode and a second electrode for the coordination electrode of transistor；And
One second capacitor, a first end point of the coordination electrode including being coupled to the second driving transistor, and be coupled to
One second endpoint of one second transmitting signal wire；And
One selection transistor, including a coordination electrode, a first electrode and a second electrode, wherein the coordination electrode is coupled to
One grid line, to receive a selection signal, which is coupled to a data line, and the second electrode be coupled to this
The coordination electrode of the coordination electrode of one driving transistor and the second driving transistor,
Wherein the second electrode of first reference transistor is coupled to the first end point of second capacitor, and pixel electricity
Road is contained in a picture element matrix, and wherein the second electrode of second reference transistor is coupled to a third capacitor,
In the third capacitor be contained in another pixel circuit in the picture element matrix.
15. pixel circuit as claimed in claim 14, wherein when the selection transistor is switched on for the first time, on the data line
A data voltage be provided to first reference transistor, and when first reference transistor is switched on, data electricity
Pressure is stored in the first capacitor and second capacitor.
16. pixel circuit as claimed in claim 15, wherein when the selection transistor is closed for the first time, first transmitting
A voltage on signal wire generates variation, and during the voltage change, which is switched to by being switched on
It is closed.
17. pixel circuit as claimed in claim 16, wherein because should the voltage change on the first transmitting signal wire, this
One voltage of the coordination electrode of one driving transistor is varied so that the first driving transistor is switched on, to provide the electricity
It flow to first light-emitting component.
18. pixel circuit as claimed in claim 14, wherein when being switched on for second of the selection transistor, on the data line
A data voltage be provided to second reference transistor, and when second reference transistor is switched on, data electricity
Pressure is stored in second capacitor and the third capacitor.
19. pixel circuit as claimed in claim 14, wherein when the selection transistor is closed for the second time, second transmitting
A voltage on signal wire generates variation, and during the voltage change, which is switched to by being switched on
It is closed.
20. pixel circuit as claimed in claim 19, wherein because should the voltage change on the second transmitting signal wire, this
One voltage of the coordination electrode of two driving transistors is varied so that the second driving transistor is switched on, to provide the electricity
It flow to second light-emitting component.
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| US15/873,600 US10311789B2 (en) | 2017-01-26 | 2018-01-17 | Pixel circuits and pixel array |
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| CN109698916B (en) * | 2018-12-21 | 2021-08-10 | 中电科技集团重庆声光电有限公司 | Pixel matrix circuit applied to image sensor |
| CN110010070B (en) * | 2019-04-08 | 2020-11-10 | 子悦光电（深圳）有限公司 | Pixel circuit |
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| CN1804977A (en) * | 2005-01-14 | 2006-07-19 | 三星电子株式会社 | Display device and driving method therefor |
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Effective date of registration: 20181029 Address after: Nanshan District, Guangdong Province, Shenzhen, Guangdong Province, Guangdong Bay, Shenzhen Bay science and technology park two districts, 6 7, 01 Applicant after: Zi Yue Optoelectronics (Shenzhen) Co., Ltd. Address before: Room 706, Yu Chung bank, 107-111, des Fred Road, central, Hongkong, China Applicant before: Limited Hong Kong Company |
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| GR01 | Patent grant | ||
| GR01 | Patent grant |