CN108342708B - Carbon element injection method and modified cutter and mold thereof - Google Patents
Carbon element injection method and modified cutter and mold thereof Download PDFInfo
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- CN108342708B CN108342708B CN201810239724.XA CN201810239724A CN108342708B CN 108342708 B CN108342708 B CN 108342708B CN 201810239724 A CN201810239724 A CN 201810239724A CN 108342708 B CN108342708 B CN 108342708B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
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Abstract
The invention discloses a carbon element injection method, a modified cutter and a die thereof. The carbon element injection method comprises the steps of placing a metal sample on a sample rack, and mounting a preset metal target on a metal ion source; vacuumizing the vacuum chamber to a first preset vacuum degree; preheating a metal ion source; introducing acetylene into the vacuum chamber to adjust the vacuum degree of the vacuum chamber to a second preset vacuum degree; and setting metal ion injection parameters and starting an ion injection device to carry and co-inject the carbon element in the acetylene to the metal sample by means of metal ions generated by a metal ion source. The carbon element injection method has the advantages of low injection cost, simplicity in operation and the like.
Description
Technical Field
The invention relates to the technical field of ion implantation, in particular to a carbon element implantation method, a modified cutter and a mold thereof.
Background
The ion implantation technology is a physical process of ionizing atoms of certain elements to form positive ions, accelerating the positive ions in a high-voltage electric field, and injecting the positive ions into the surface of a solid material after obtaining a high speed, and is mainly applied to the aspects of improving the performance of the material and the like. For example, carbon is implanted into a metal sample, and the conventional implantation method is to ionize a graphite target mounted on a metal ion source to form carbon ions and then implant the carbon ions into the metal sample, or to make the metal sample to which a pulse negative high voltage is applied attract the carbon ions in acetylene ionized by an electric arc. However, the implantation cost of these two methods for implanting carbon element is often high, and especially when the dual ion implantation of carbon element and metal ion is involved, the implantation operation is further complicated because the target needs to be exchanged and implanted on the metal ion implanter, or the acetylene is in the arc ionization state while the metal sample is applied with pulse negative high voltage.
Disclosure of Invention
The embodiment of the invention provides a carbon element injection method, a modified cutter and a mold thereof, aiming at reducing the carbon element injection cost.
In a first aspect, an embodiment of the present invention provides a carbon element implantation method, which is applied to an ion implantation apparatus, where the ion implantation apparatus includes a metal ion source, a vacuum chamber, and a sample holder located in the vacuum chamber, and includes:
placing a metal sample on the sample holder, and mounting a preset metal target on the metal ion source;
vacuumizing the vacuum chamber to a first preset vacuum degree;
preheating the metal ion source;
introducing acetylene into the vacuum chamber to adjust the vacuum degree of the vacuum chamber to a second preset vacuum degree;
setting metal ion injection parameters and starting the ion injection equipment to carry and co-inject carbon elements in the acetylene to the metal sample by means of metal ions generated by the metal ion source.
In the carbon element implantation method provided by the embodiment of the present invention, before the placing the metal sample on the sample holder, the method further includes:
and ultrasonically cleaning the metal sample by using absolute ethyl alcohol, and drying the cleaned metal sample.
In the carbon element implantation method provided in the embodiment of the present invention, after the setting of the metal ion implantation parameters and the starting of the ion implantation apparatus to co-implant the carbon element in the acetylene into the metal sample by carrying with the metal ion generated by the metal ion source, the method further includes:
vacuumizing the vacuum chamber to a third preset vacuum degree;
and when the temperature of the vacuum chamber is reduced to room temperature, introducing air into the vacuum chamber so as to enable the vacuum degree of the vacuum chamber to be standard atmospheric pressure.
In the carbon element implantation method provided by the embodiment of the invention, the metal sample comprises ferrous metal, nonferrous metal or hard alloy.
In the carbon element injection method provided by the embodiment of the invention, the hard alloy comprises tungsten carbide-based hard alloy, titanium carbide-based hard alloy, coating hard alloy or steel-based hard alloy.
In the carbon element implantation method provided by the embodiment of the invention, the first preset vacuum degree is 1.0 × 10-2Pa to 2.0 × 10-2Pa, the second preset vacuum degree is 1 × 10-1Pa。
In the carbon element injection method provided by the embodiment of the invention, the metal ion injection parameters comprise extraction voltage, suppression voltage, arc voltage and extraction beam current; the extraction voltage, the suppression voltage, the arc voltage and the extraction beam current are respectively 42kv, 2.1kv, 65v and 5.5 mA.
In the carbon element injection method provided by the embodiment of the present invention, the preset metal target includes a titanium metal target, a chromium metal target, an yttrium metal target, or a vanadium metal target.
In a second aspect, an embodiment of the present invention further provides a modified tool, which includes a tool body, where the tool body includes a working area, and the working area is a metal sample manufactured by any one of the carbon element implantation methods provided in the embodiments of the present invention.
In a third aspect, an embodiment of the present invention further provides a modified mold, which includes a mold base and a mold body disposed on the mold base, where a mold groove is disposed on the mold body, and an inner surface of the mold groove is a metal sample manufactured by any one of the carbon element injection methods provided in the embodiments of the present invention.
The embodiment of the invention provides a carbon element injection method, a modified cutter and a mold thereof. When the double injection of carbon element and other metal elements is involved, the target material is not required to be alternately replaced on a metal ion source for injection, and the metal ions and the nitrogen element can be co-injected into the metal sample without applying pulse negative high voltage to the metal sample and simultaneously enabling acetylene to be in an arc ionization state. The carbon element injection method has the advantages of low injection cost, simple process, easy operation and the like.
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In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic flow chart of a carbon implantation method according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a tool body in a modified tool according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a modification mold provided in an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic flow chart illustrating a carbon implantation method according to an embodiment of the present disclosure. The carbon element implantation method is applied to ion implantation equipment. The ion implantation equipment comprises a metal ion source, a vacuum chamber, a sample rack positioned in the vacuum chamber and the like.
As shown in fig. 1, the carbon element implantation method includes steps S101 to S105.
S101, placing a metal sample on the sample rack, and mounting a preset metal target on the metal ion source.
In an embodiment, the metal specimen may be, for example, cemented carbide. The cemented carbide may be a tungsten carbide-based cemented carbide, wherein the content of tungsten carbide in the tungsten carbide-based cemented carbide may be 92%, and the content of cobalt may be 8%. It is understood that in other embodiments, the cemented carbide may be an alloy formed from other materials, for example, the cemented carbide may be a titanium carbide-based cemented carbide, a coated cemented carbide, a steel-based cemented carbide, or other cemented carbide, and is not limited thereto.
In addition, the metal sample may be other metal samples besides cemented carbide, for example, ferrous metal such as steel, pig iron, iron alloy, cast iron, and the like, nonferrous metals such as copper and aluminum, and the metal sample may include other types, which are not specifically described herein.
In an embodiment, the predetermined metal target may be, for example, a titanium metal target, a chromium metal target, an yttrium metal target, a vanadium metal target, or other injectable metal targets, and the predetermined metal target may be selected according to the actual metal to be injected into the metal sample, which is not limited herein.
In an embodiment, in order to avoid introducing other impurity elements during the ion implantation process of the metal sample, the metal sample needs to be subjected to a surface decontamination process before step S101 is performed. Specifically, the metal sample can be ultrasonically cleaned by using absolute ethyl alcohol to remove impurities such as oil stains on the surface of the metal sample, and then the cleaned metal sample is dried. And placing the metal sample subjected to blow-drying treatment on a sample rack for subsequent operation.
And S102, vacuumizing the vacuum chamber to a first preset vacuum degree.
After the operation of step S101 is completed, the vacuum chamber is vacuumized to a first predetermined vacuum degree, so as to almost completely remove the air in the vacuum chamber, in one embodiment, the first predetermined vacuum degree is 1.0 × 10-2Pa to 2.0 × 10-2And the specific value between Pa can be set according to actual requirements.
S103, preheating the metal ion source.
Specifically, after the vacuum chamber is vacuumized to a first preset vacuum degree, a power supply of the metal ion source is turned on to preset the metal ion source, and specifically, a certain time period can be preset, and the metal ion source can also be preheated to a certain temperature.
And S104, introducing acetylene into the vacuum chamber to adjust the vacuum degree of the vacuum chamber to a second preset vacuum degree.
In this embodiment, high-purity acetylene gas is introduced into the vacuum chamber, and the vacuum degree of the vacuum chamber is adjusted in real time until the vacuum degree of the vacuum chamber is adjusted to a second preset vacuum degree, so that a good acetylene atmosphere is provided for the ion implantation process. For example, the second predetermined vacuumThe degree may be 1 × 10-1Pa, it is understood that the second predetermined vacuum level may also be other values.
S105, setting metal ion injection parameters and starting the ion injection equipment to carry and co-inject carbon elements in the acetylene to the metal sample by means of metal ions generated by the metal ion source.
In the present embodiment, the metal ion implantation parameters include extraction voltage, suppression voltage, arc voltage, and extraction beam current. The extraction voltage can be 42kv, the suppression voltage can be 2.1kv, the arc voltage can be 65v, and the extraction beam current can be 5.5 mA. Of course, the specific values of the parameters of the metal ion implantation may be modified according to actual requirements, and are not limited herein.
And after the metal ion implantation parameters are set, starting the ion implantation equipment to perform an ion implantation process. In the ion implantation process, after a metal ion source is electrified, a preset metal target material is ionized into corresponding metal ions, the generated metal ions have certain kinetic energy and enter an acetylene atmosphere in a vacuum chamber, and therefore the carbon element is carried and co-implanted into the metal sample by the metal ions generated by the metal ion source. Specifically, metal ions having certain kinetic energy collide with acetylene molecules, thereby generating corresponding carbon ions or carbon atoms, and when the metal ions are injected into a metal sample together with carbon elements in acetylene, the carbon elements may be injected into the metal sample in the form of carbon ions and/or carbon atoms.
In this embodiment, the implantation depth of the carbon element is substantially the same as the implantation depth of the co-implanted metal ions. In the metal sample where the acetylene implantation is completed, the carbon element may be combined with the metal ions implanted together to form a compound or simultaneously a diamond-like structure may be generated. For example, when the metal sample is a tungsten carbide-based cemented carbide product and the predetermined metal target is a vanadium metal target, a diamond-like structure can be formed in the tungsten carbide-based cemented carbide product into which carbon is injected, thereby improving the hardness of the tungsten carbide-based cemented carbide product. In addition, a newly generated vanadium carbide (with a chemical formula of VC) compound is dispersed and separated out in the ion implantation layer, so that the surface hardness is improved; during the whole ion implantation process, the tungsten carbide grains in the ion implantation layer can be split and refined into smaller grains, and the newly generated vanadium carbide can prevent the newly generated tungsten carbide grains from growing, so that the surface hardness can be further improved. The tungsten carbide-based hard alloy product based on the ion implantation also has the advantage of small friction coefficient, and the vanadium carbide compound phase which has a compact structure and is sewn in the ion implantation layer can effectively reduce the friction coefficient of the surface of the material, so that the wear resistance of the tungsten carbide-based hard alloy product is improved. Meanwhile, because the vanadium carbide is stable in chemical property, microscopic pores in the ion injection layer can be filled, and the relatively dense surface hinders the progress of corrosion, so that the whole tungsten carbide-based hard alloy product has good corrosion resistance.
In an embodiment, after the implantation of the carbon element is completed, because acetylene gas may still exist in the vacuum chamber, in consideration of safety, after the step S105 is performed, the vacuum chamber is vacuumized to a third preset vacuum degree, and when the temperature of the vacuum chamber is reduced to room temperature, air is introduced into the vacuum chamber to make the vacuum degree of the vacuum chamber be a standard atmospheric pressure, wherein the third preset vacuum degree may be 2 × 10-2Pa or less. After the vacuum chamber is vacuumized, acetylene gas in the vacuum chamber can be almost completely removed, in order to prevent the metal sample from being polluted by other gases such as air, the temperature of the vacuum chamber is required to be reduced to room temperature (for example, 25 ℃), then air is introduced into the vacuum chamber to restore the vacuum degree of the vacuum chamber to standard atmospheric pressure, and at this time, the vacuum chamber can be safely opened to take out the metal sample.
In the carbon element injection method in this embodiment, acetylene is introduced into the vacuum chamber, and after the ion injection device is started, the carbon element is carried and co-injected into the metal sample by the metal ions generated by the metal ion source. The carbon element injection method can greatly reduce the injection cost, particularly only needs one metal ion source under the condition that carbon elements and metal ions need to be injected, saves the equipment cost, does not need to be injected alternately, and simplifies the ion injection process.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a tool body in a modified tool according to an embodiment of the present application. The modifying tool includes a tool body 20, the tool body 20 including a working area 21, the working area 21 may be a surface or area of the modifying tool that needs to be in contact with the work piece during use. In this embodiment, the working area 21 is a metal sample manufactured by any one of the carbon element implantation methods provided in the above embodiments.
Since the process of the carbon element implantation method has been described in detail in the foregoing embodiments, and the reason why the properties of the metal sample, such as hardness and corrosion resistance, are improved after the carbon element implantation is also described, it is not repeated herein for the simplicity of the description.
It should be noted that the tool body shown in fig. 2 is only for illustrative purposes, and the specific shape, structure, etc. of the tool body shown in fig. 2 are not used to limit the modified tool in the present application, and the specific shape, structure, etc. of the tool body in the present application may be other types. For example, the tool body may be a twist drill, a reamer, a boring cutter, a milling insert, a ball end mill, a saw blade mill, a taper mill, a step drill, a spiral end mill, a drill-reamer, a three-edge mill, a T-shaped mill, an indexable face mill, an indexable dovetail mill, an indexable three-edge mill, a high-speed steel forming mill, a left-handed drill, a spherical mill, a special tool for the automobile industry, a special tool for the mobile machine industry, a special tool for the sewing machine industry, a special tool for the mold industry, and the like, in addition to the milling cutter shown in fig. 2, which are not listed herein.
In the modified cutting tool provided by the embodiment, the working area 21 is a metal sample manufactured by the carbon element injection method, so that the whole modified cutting tool has the characteristics of high hardness, strong corrosion resistance, long service life and the like.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a modification mold in an embodiment of the present application. The modification die 30 includes a die holder 31 and a die body 32 provided on the die holder 31. The mold body 32 is provided with a mold groove 320. The mold chase 320 is recessed from the surface of the mold body 32. The mold cavity 320 is filled with a material to be molded to form a shaped product. The inner surface of the mold groove 320 is a metal sample manufactured by any one of the carbon element injection methods in the above embodiments.
Since the process of the carbon element implantation method has been described in detail in the foregoing embodiments, and the reason why the properties of the metal sample, such as hardness and corrosion resistance, are improved after the carbon element implantation is also described, it is not repeated herein for the simplicity of the description. It should be noted that the mold shown in fig. 3 is only for exemplary purposes, and the specific shape, structure, etc. of the mold shown in fig. 3 are not used to limit the mold in the present application, and the specific shape, structure, etc. of the mold in the present application can be designed according to actual needs. For example, the mold 30 may be of the following types: drawing dies, forming dies, stamping dies, thermosetting plastic injection dies, sheet punch dies, hot extrusion dies, flat upsetting dies, electronic component finishing dies, flame tube expanding dies, plastic extrusion hot dies, indentation dies, and the like.
In the modification mold provided by the embodiment, the inner surface of the mold groove 320 is a metal sample manufactured by the carbon element injection method in the application, so that the whole modification mold has the characteristics of high hardness, strong corrosion resistance, long service life and the like.
While the invention has been described with reference to specific embodiments, the invention is not limited thereto, and various equivalent modifications and substitutions can be easily made by those skilled in the art within the technical scope of the invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (7)
1. A carbon element implantation method is applied to an ion implantation device, the ion implantation device comprises a metal ion source, a vacuum chamber and a sample holder positioned in the vacuum chamber, and is characterized by comprising the following steps:
placing a metal sample on the sample holder, and mounting a preset metal target on the metal ion source; vacuumizing the vacuum chamber to a first preset vacuum degree;
preheating the metal ion source;
introducing acetylene into the vacuum chamber to adjust the vacuum degree of the vacuum chamber to a second preset vacuum degree;
setting metal ion injection parameters and starting the ion injection equipment to carry and co-inject carbon elements in the acetylene to the metal sample by means of metal ions generated by the metal ion source;
the injection depth of the carbon element is consistent with that of the co-injected metal ions, the metal sample is tungsten carbide-based hard alloy, and the preset metal target is a vanadium metal target.
2. The carbon element implantation method according to claim 1, further comprising, before said placing the metal specimen on the specimen holder:
and ultrasonically cleaning the metal sample by using absolute ethyl alcohol, and drying the cleaned metal sample.
3. The carbon element implantation method according to claim 1, further comprising, after the setting of the metal ion implantation parameters and the starting of the ion implantation apparatus to co-implant the carbon element in the acetylene to the metal sample by carrying with the metal ions generated by the metal ion source:
vacuumizing the vacuum chamber to a third preset vacuum degree;
and when the temperature of the vacuum chamber is reduced to room temperature, introducing air into the vacuum chamber so as to enable the vacuum degree of the vacuum chamber to be standard atmospheric pressure.
4. The carbon element implantation method as recited in claim 1, wherein the first predetermined vacuum degree is 1.0 × 10-2Pa to 2.0 × 10-2Pa, the second preset vacuum degree is 1 × 10-1Pa。
5. The carbon element implantation method according to claim 1, wherein the metal ion implantation parameters include an extraction voltage, a suppression voltage, an arc voltage, and an extraction beam current; the extraction voltage, the suppression voltage, the arc voltage and the extraction beam current are respectively 42kv, 2.1kv, 65v and 5.5 mA.
6. A modified tool comprising a tool body, wherein the tool body comprises a working area, and the working area is a metal sample manufactured by the carbon element implantation method according to any one of claims 1 to 5.
7. A modified die is characterized by comprising a die holder and a die body arranged on the die holder, wherein a die groove is formed in the die body, and the inner surface of the die groove is a metal sample manufactured by the carbon element injection method according to any one of claims 1 to 5.
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