CN108337745B - Variable-frequency heating control circuit of nitrogen-oxygen sensor - Google Patents
Variable-frequency heating control circuit of nitrogen-oxygen sensor Download PDFInfo
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- CN108337745B CN108337745B CN201810198081.9A CN201810198081A CN108337745B CN 108337745 B CN108337745 B CN 108337745B CN 201810198081 A CN201810198081 A CN 201810198081A CN 108337745 B CN108337745 B CN 108337745B
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 78
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000000919 ceramic Substances 0.000 claims abstract description 22
- 239000003990 capacitor Substances 0.000 claims description 139
- 230000009466 transformation Effects 0.000 claims description 17
- 230000005669 field effect Effects 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 9
- 230000000087 stabilizing effect Effects 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0073—Control unit therefor
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- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Food Science & Technology (AREA)
- Medicinal Chemistry (AREA)
- Physics & Mathematics (AREA)
- Combustion & Propulsion (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
The invention discloses a frequency-conversion heating control circuit of a nitrogen-oxygen sensor, which is used for carrying out frequency-conversion heating on the nitrogen-oxygen sensor and comprises the nitrogen-oxygen sensor, wherein the nitrogen-oxygen sensor is provided with a ceramic chip, and further comprises a singlechip module, an IC voltage-transformation frequency-modulation module and a heating interface module, wherein the IC voltage-transformation frequency-modulation module and the heating interface module are both connected with the singlechip module, the IC voltage-transformation frequency-modulation module is connected with the heating interface module, and the heating interface module is connected with the ceramic chip. The ceramic chip is heated in a pressure-variable regulation mode, so that the ceramic chip is more energy-saving and environment-friendly.
Description
Technical Field
The invention relates to the technical field of nitrogen and oxygen sensors, in particular to a variable-frequency heating control circuit of a nitrogen and oxygen sensor.
Background
Tail gas discharged from automobiles has become atmospheric NO X The main source of contaminants. Because of the improvement of the national exhaust emission standard, NO in the exhaust is required X The discharge amount is detected and processed in real time, and the nitrogen-oxygen sensor is one of the core components in the detection system. The nitrogen-oxygen sensor consists of a sensor probe and an electric control unit, and the sensor probe and the electric control unit are connected through a wire harness. The unified part of the nitrogen-oxygen sensor is responsible for collecting tail gas, and three steps of gas separation, ionization decomposition and concentration measurement are carried out in the unified part; the electric control unit provides the current required by the three processes for the probe through the cable, collects the electric signals of each process, and simultaneously sends the measurement information to the engine or other control units through the CAN bus. Before the nitrogen-oxygen sensor starts to measure, the head of the ceramic chip needs to reach and be stabilized at 700-750 ℃ to ensure the normal running of the reaction. However, in the existing methods, most of the temperature control of the nitrogen-oxygen sensor needs to be completed by means of a constant current source, so that the cost and complexity of the system are increased, and meanwhile, in the heating mode, the fact that current flows through an external resistor during heating is difficult to avoid, larger energy consumption is consumed, and energy conservation and environmental protection are not facilitated.
Disclosure of Invention
The invention aims to provide a variable-frequency heating control circuit of a nitrogen-oxygen sensor, aiming at the defects and the shortcomings of the prior art.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the nitrogen-oxygen sensor variable-frequency heating control circuit is used for performing variable-frequency heating on a nitrogen-oxygen sensor and comprises a nitrogen-oxygen sensor, wherein the nitrogen-oxygen sensor is provided with a ceramic chip, the nitrogen-oxygen sensor further comprises a singlechip module, an IC (integrated circuit) voltage-varying frequency-modulating module and a heating interface module, the IC voltage-varying frequency-modulating module and the heating interface module are both connected with the singlechip module, the IC voltage-varying frequency-modulating module is connected with the heating interface module, the heating interface module is connected with the ceramic chip and comprises a heating interface P1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a capacitor C9, a capacitor C60, an inductor L1, an inductor L2, a resistor R1 and a resistor R2, 7 pins of the heating interface P1 are all connected with a ground signal GND through the capacitor C60, 4 pins of the heating interface P1 are connected with the ground signal GND through the capacitor C5, the 3 pin of the heating interface P1 is connected with a ground signal GND through a capacitor C4, the 4 pin of the heating interface P1 is connected with a singlechip module, the 3 pin of the heating interface P1 is connected with an IC voltage transformation frequency modulation module, the 2 pin of the heating interface P1 is connected with the ground signal GND, the 1 pin of the heating interface P1 is connected with one end of an inductor L1 through a resistor R1, one end of the inductor L1 is connected with the ground signal GND through the capacitor C1, the other end of the inductor L1 is connected with one end of the inductor L2 through a resistor R2, the other end of the inductor L1 is connected with a ground signal GND through a capacitor C2, the other end of the inductor L2 is connected with the ground signal GND through a capacitor C3, the other end of the inductor L2 is connected with an IC voltage transformation frequency modulation module, 8 pins of the heating interface P1 are all connected with a ceramic chip, and the IC voltage transformation frequency modulation module comprises an IC voltage transformation frequency modulation chip U10, the resistor R45, the triode Q2, the resistor R43, the field effect MOS transistor Q1, the capacitor C42, the resistor R42, the voltage stabilizing diode D8, the resistor R6, the resistor R5, the resistor R41, the voltage stabilizing diode D1, the capacitor C11, the diode D4, the resistor R7, the voltage stabilizing diode D2, the capacitor C12, one end of the resistor R45 is connected with the 3 pin of the single chip U11, the other end of the resistor R45 is connected with the base of the triode Q2, the emitter of the triode Q2 is connected with the G pole of the IC voltage-converting frequency-modulating chip U10 through the resistor R43, the S pole of the field effect MOS transistor Q1 is connected with the G pole of the field effect MOS transistor Q1 through the capacitor C42, the resistor R42 and the voltage stabilizing diode D8 are all connected with the capacitor C42 in parallel, the D pole of the field effect MOS transistor Q1 is connected with the 3 pin of the IC voltage-converting chip U10 through the resistor R8, the other end of the IC voltage-converting chip U2 is connected with the base of the triode Q2 through the resistor R7, the one end of the resistor U4 is connected with the resistor U7 through the voltage-converting frequency-converting diode Q2, the one end of the resistor R7 is connected with the resistor U5 through the resistor R5, the voltage-converting frequency-converting MOS transistor Q2 is connected with the resistor R5, the other end of the resistor R5 is connected with the resistor R5, the voltage-converting MOS transistor Q1 is connected with the resistor R5 through the resistor R5, the other end of the resistor R5 is connected with the resistor R5, the capacitor C12 and the zener diode D2 are connected in parallel.
Further, the singlechip module includes singlechip U11, crystal oscillator module, filter module, reset module, resistance R18, resistance R19, electric capacity C41, crystal oscillator module, filter module, reset module all connect singlechip U11, the 3 pin of singlechip U11 connects IC vary voltage frequency modulation module, the 62 pin of singlechip U11 passes through electric capacity C41 and connects ground signal GND, resistance R18 is parallelly connected with electric capacity C41, heating interface module and IC vary voltage frequency modulation module all connect the 62 pin of singlechip U11 through resistance R19.
Further, the model of the singlechip U11 is MC9S08DZ60.
Further, the type of the IC transformer frequency modulation chip U10 is AIC11337.
Further, the crystal oscillator module comprises a capacitor C23, a capacitor C26, a resistor R21 and a resistor R22, wherein one end of the capacitor C23 and one end of the capacitor C26 are both connected with a ground signal GND, the other end of the capacitor C23 is connected with the 9 pin of the single chip microcomputer U11, the other end of the capacitor C26 is connected with the 10 pin of the single chip microcomputer U11 through the resistor R22, and the other end of the capacitor C23 is connected with the other end of the capacitor C26 through the resistor R21.
Further, the reset module comprises a 5V power supply, a resistor R20, a capacitor C22 and a capacitor C25, wherein one end of the resistor R20 is connected with the 5V power supply, the other end of the resistor R20 is connected with a ground signal GND through the capacitor C22, the capacitor C25 is connected with the capacitor C22 in parallel, and the other end of the resistor R20 is connected with the 11 pin of the singlechip U11.
Further, the filtering module comprises a capacitor C18, a capacitor C19, a capacitor C20 and a capacitor C24, wherein one end of the capacitor C18, one end of the capacitor C19, one end of the capacitor C20 and one end of the capacitor C24 are all connected with the singlechip U11, and the other end of the capacitor C18, the other end of the capacitor C19, the other end of the capacitor C20 and the other end of the capacitor C24 are all connected with the ground signal GND.
The beneficial effects of the invention are as follows: the ceramic chip is heated in a pressure-variable regulation mode, so that the ceramic chip is more energy-saving and environment-friendly.
Drawings
Fig. 1 is a system schematic block diagram of the overall invention.
Fig. 2 is a schematic circuit diagram of the single chip module of the present invention.
Fig. 3 is a schematic circuit diagram of a heating interface module according to the present invention.
Fig. 4 is a schematic circuit diagram of the IC voltage transformation frequency modulation module of the present invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
As shown in fig. 1 to 4, the frequency conversion heating control circuit of a nitrogen-oxygen sensor is used for performing frequency conversion heating on the nitrogen-oxygen sensor, and comprises the nitrogen-oxygen sensor, the nitrogen-oxygen sensor is provided with a ceramic chip 3, and further comprises a single chip microcomputer module 1, an IC voltage transformation frequency modulation module 4 and a heating interface module 2, the IC voltage transformation frequency modulation module 4 and the heating interface module 2 are both connected with the single chip microcomputer module 1, the IC voltage transformation frequency modulation module 4 is connected with the heating interface module 2, the heating interface module 2 is connected with the ceramic chip 3, the heating interface module 2 comprises a heating interface P1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a capacitor C9, a capacitor C60, an inductor L1, a resistor R1 and a resistor R2, 7 pins of the heating interface P1 are both connected with a ground signal GND through a capacitor C60, the capacitor C9 is connected with the capacitor C60 in parallel, the pin 4 of the heating interface P1 is connected with the ground signal GND through a capacitor C5, the pin 3 of the heating interface P1 is connected with the ground signal GND through a capacitor C4, the pin 4 of the heating interface P1 is connected with the singlechip module 1, the pin 3 of the heating interface P1 is connected with the IC voltage transformation frequency modulation module 4, the pin 2 of the heating interface P1 is connected with the ground signal GND, the pin 1 of the heating interface P1 is connected with one end of an inductor L1 through a resistor R1, one end of the inductor L1 is connected with one end of an inductor L2 through a resistor R2, the other end of the inductor L1 is connected with the ground signal GND through a capacitor C2, the other end of the inductor L2 is connected with the ground signal GND through a capacitor C3, the other end of the inductor L2 is connected with the IC voltage transformation frequency modulation module 4, the 8 pins of the heating interface P1 are all connected with the ceramic chip 3, the IC voltage-transformation frequency-modulation module 4 comprises an IC voltage-transformation frequency-modulation chip U10, a resistor R45, a triode Q2, a resistor R43, a field-effect MOS transistor Q1, a capacitor C42, a resistor R42, a voltage-stabilizing diode D8, a resistor R6, a resistor R5, a resistor R41, a voltage-stabilizing diode D1, a capacitor C11, a diode D4, a resistor R7, a voltage-stabilizing diode D2 and a capacitor C12, wherein one end of the resistor R45 is connected with a 3 pin of the singlechip U11, the other end of the resistor R45 is connected with a base electrode of the triode Q2, an emitter electrode of the triode Q2 is connected with a 13 pin of the IC voltage-transformation frequency-modulation chip U10, a collector of the triode Q2 is connected with a G pole of the field-effect MOS transistor Q1 through the resistor R43, an S pole of the field-effect MOS transistor Q1 is connected with a G pole of the field-effect MOS transistor Q1 through the capacitor C42, the resistor R42 and the diode D8 are connected with the capacitor C42 in parallel, a D pole of the field-effect MOS transistor Q1 is connected with the frequency-modulation chip U10 through the resistor R8, the 2-pin of the IC voltage-transformation frequency-modulation chip U10 is connected with the heating interface module 2, the D pole of the field effect MOS tube Q1 is connected with one end of a resistor R5 through a resistor R6, one end of the resistor R5 is connected with a ground signal GND through a resistor R41, the other end of the resistor R5 is connected with the 4-pin of the IC voltage-transformation frequency-modulation chip U10, the other end of the resistor R5 is connected with the ground signal GND through a voltage-stabilizing diode D1, the voltage-stabilizing diode D1 is connected with a capacitor C11 in parallel, one end of the resistor R5 is connected with the 24-pin of the IC voltage-transformation frequency-modulation chip U10 through a diode D4, the 7-pin of the IC voltage-transformation frequency-modulation chip U10 is connected with the heating interface module 2, one end of the resistor R7 is connected with the single chip module 1, the other end of the resistor R7 is connected with the ground signal GND through a voltage-stabilizing diode D2, the other end of the resistor R7 is connected with the 3-pin of the IC voltage-transformation frequency-modulation chip U10, the capacitor C12 and the zener diode D2 are connected in parallel.
As shown in fig. 1 to 4, the single-chip microcomputer module 1 includes a single-chip microcomputer U11, a crystal oscillator module 12, a filter module 11, a reset module 13, a resistor R18, a resistor R19, and a capacitor C41, the crystal oscillator module 12, the filter module 11, and the reset module 13 are all connected with the single-chip microcomputer U11, a 3 pin of the single-chip microcomputer U11 is connected with the IC voltage transformation frequency modulation module 4, a 62 pin of the single-chip microcomputer U11 is connected with a ground signal GND through the capacitor C41, the resistor R18 is connected with the capacitor C41 in parallel, and the heating interface module 2 and the IC voltage transformation frequency modulation module 4 are all connected with the 62 pin of the single-chip microcomputer U11 through the resistor R19.
The model of the singlechip U11 is MC9S08DZ60.
The model of the IC voltage transformation frequency modulation chip U10 is AIC11337.
As shown in fig. 1 to 4, the crystal oscillator module 12 includes a capacitor C23, a capacitor C26, a resistor R21, and a resistor R22, where one end of the capacitor C23 and one end of the capacitor C26 are both connected to the ground signal GND, the other end of the capacitor C23 is connected to the 9 pin of the single-chip microcomputer U11, the other end of the capacitor C26 is connected to the 10 pin of the single-chip microcomputer U11 through the resistor R22, and the other end of the capacitor C23 is connected to the other end of the capacitor C26 through the resistor R21.
As shown in fig. 1 to 4, the reset module 13 includes a 5V power supply, a resistor R20, a capacitor C22, and a capacitor C25, wherein one end of the resistor R20 is connected to the 5V power supply, the other end of the resistor R20 is connected to the ground signal GND through the capacitor C22, the capacitor C25 is parallel to the capacitor C22, and the other end of the resistor R20 is connected to the 11 pin of the single chip U11.
As shown in fig. 1 to 4, the filter module 11 includes a capacitor C18, a capacitor C19, a capacitor C20, and a capacitor C24, where one end of the capacitor C18, one end of the capacitor C19, one end of the capacitor C20, and one end of the capacitor C24 are all connected to the single chip U11, and the other end of the capacitor C18, the other end of the capacitor C19, the other end of the capacitor C20, and the other end of the capacitor C24 are all connected to the ground signal GND.
The working principle of the circuit is that after the singlechip U11 is started, firstly, a weak signal is sent out through the PTA73, namely 3 pins of the singlechip U11, the ceramic chip is preheated, generally, the preheating time is about 30 seconds, then the PTA7 stops working, the singlechip is converted to send out a strong signal through the PTA5, namely 62 pins, the ceramic chip is rapidly heated through the heating interface P1, the ceramic chip is rapidly heated, the output mode of the PTA5 is stopped after heating for a period of time, the PTA5 is changed into the feedback mode, namely the PTA5 pins are operated in a virtually bidirectional mode, the temperature of the ceramic chip is detected, if the temperature does not reach a set value, the heating is continued, if the temperature reaches the set value, the heating is stopped, the PTA5 always monitors the temperature in real time, and as long as the temperature is lower than the set value, the heating is started, so that the variable-frequency heating effect is achieved.
The ceramic chip is heated in a pressure-variable regulation mode, so that the ceramic chip is more energy-saving and environment-friendly.
It should be noted that the above list is only one specific embodiment of the present invention. It is obvious that the invention is not limited to the above embodiments, but that many variations are possible, and that in any case all variations that can be directly derived or suggested by a person skilled in the art from the disclosure of the invention shall be considered as the protective scope of the invention.
Claims (7)
1. The nitrogen-oxygen sensor variable-frequency heating control circuit is used for performing variable-frequency heating on a nitrogen-oxygen sensor and comprises the nitrogen-oxygen sensor, wherein the nitrogen-oxygen sensor is provided with a ceramic chip (3), and is characterized by further comprising a single chip microcomputer module (1), an IC variable-frequency modulation module (4) and a heating interface module (2), wherein the IC variable-frequency modulation module (4) and the heating interface module (2) are connected with the single chip microcomputer module (1), the IC variable-frequency modulation module (4) is connected with the heating interface module (2), the heating interface module (2) is connected with the ceramic chip (3), the heating interface module (2) comprises a heating interface P1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a capacitor C9, a capacitor C60, an inductor L1, an inductor L2, a resistor R1 and a resistor R2, 7 pins of the heating interface P1 are all connected with a ground signal through the capacitor C60, the capacitor C9 is connected with the capacitor C60 in parallel, 4 of the heating interface P1 is connected with the ground signal through the capacitor C5, the heating interface P1 is connected with one end of the heating interface module through the inductor R1 through the inductor L1 pin of the capacitor C1, one end of the heating interface is connected with the inductor L1 through the inductor L1 pin of the inductor C1, one end of the heating interface is connected with the inductor L1 through the inductor pin of the inductor C1, the other end of the inductor L1 is connected with a ground signal GND through a capacitor C2, the other end of the inductor L2 is connected with the ground signal GND through a capacitor C3, the other end of the inductor L2 is connected with an IC voltage transformation frequency modulation module (4), 8 pins of the heating interface P1 are all connected with a ceramic chip (3), the IC voltage transformation frequency modulation module (4) comprises an IC voltage transformation frequency modulation chip U10, a resistor R45, a triode Q2, a resistor R43, a field effect MOS transistor Q1, a capacitor C42, a resistor R42, a voltage stabilizing diode D8, a resistor R6, a resistor R5, a resistor R41, a voltage stabilizing diode D1, a capacitor C11, a diode D4, a resistor R7, a voltage stabilizing diode D2 and a capacitor C12, one end of the resistor R45 is connected with a 3 pin of the single chip U11, the other end of the resistor R45 is connected with a base of the triode Q2, an emitter of the triode Q2 is connected with a 13 pin of the IC voltage transformation frequency modulation chip U10, the collector of the triode Q2 is connected with the G pole of a field effect MOS tube Q1 through a resistor R43, the S pole of the field effect MOS tube Q1 is connected with the G pole of the field effect MOS tube Q1 through a capacitor C42, the resistor R42 and a zener diode D8 are connected with the capacitor C42 in parallel, the D pole of the field effect MOS tube Q1 is connected with the 2 pin of an IC voltage-transformation frequency-modulation chip U10 through the resistor R8, the 2 pin of the IC voltage-transformation frequency-modulation chip U10 is connected with a heating interface module (2), the D pole of the field effect MOS tube Q1 is connected with one end of a resistor R5 through a resistor R6, one end of the resistor R5 is connected with a ground signal GND through a resistor R41, the other end of the resistor R5 is connected with the 4 pin of the IC voltage-transformation frequency-modulation chip U10, the other end of the resistor R5 is connected with the ground signal GND through a zener diode D1 and the capacitor C11 in parallel, one end of the resistor R5 is connected with the 24 pins of the IC voltage-transformation frequency-modulation chip U10 through the diode D4, the 7 pins of the IC voltage-transformation frequency-modulation chip U10 are connected with the heating interface module (2), one end of the resistor R7 is connected with the single chip microcomputer module (1), the other end of the resistor R7 is connected with the ground signal GND through the voltage-stabilizing diode D2, the other end of the resistor R7 is connected with the 3 pins of the IC voltage-transformation frequency-modulation chip U10, and the capacitor C12 and the voltage-stabilizing diode D2 are connected in parallel.
2. The variable-frequency heating control circuit of the nitrogen-oxygen sensor according to claim 1, wherein the single-chip microcomputer module (1) comprises a single-chip microcomputer U11, a crystal oscillator module (12), a filtering module (11), a resetting module (13), a resistor R18, a resistor R19 and a capacitor C41, the crystal oscillator module (12), the filtering module (11) and the resetting module (13) are all connected with the single-chip microcomputer U11, a 3 pin of the single-chip microcomputer U11 is connected with an IC variable-voltage frequency modulation module (4), a 62 pin of the single-chip microcomputer U11 is connected with a ground signal GND through a capacitor C41, the resistor R18 is connected with the capacitor C41 in parallel, and the heating interface module (2) and the IC variable-voltage frequency modulation module (4) are all connected with the 62 pin of the single-chip microcomputer U11 through the resistor R19.
3. The variable-frequency heating control circuit of the nitrogen-oxygen sensor according to claim 2, wherein the model of the single-chip microcomputer U11 is MC9S08DZ60.
4. The variable frequency heating control circuit of the nitrogen-oxygen sensor according to claim 1, wherein the type of the IC variable frequency modulation chip U10 is AIC11337.
5. The variable-frequency heating control circuit of a nitrogen-oxygen sensor according to claim 2, wherein the crystal oscillator module (12) comprises a capacitor C23, a capacitor C26, a resistor R21 and a resistor R22, one end of the capacitor C23 and one end of the capacitor C26 are both connected with a ground signal GND, the other end of the capacitor C23 is connected with a 9 pin of the single chip microcomputer U11, the other end of the capacitor C26 is connected with a 10 pin of the single chip microcomputer U11 through the resistor R22, and the other end of the capacitor C23 is connected with the other end of the capacitor C26 through the resistor R21.
6. The variable-frequency heating control circuit of a nitrogen-oxygen sensor according to claim 2, wherein the reset module (13) comprises a 5V power supply, a resistor R20, a capacitor C22 and a capacitor C25, one end of the resistor R20 is connected with the 5V power supply, the other end of the resistor R20 is connected with a ground signal GND through the capacitor C22, the capacitor C25 is connected with the capacitor C22 in parallel, and the other end of the resistor R20 is connected with the 11 pin of the single chip microcomputer U11.
7. The variable-frequency heating control circuit of a nitrogen-oxygen sensor according to claim 2, wherein the filtering module (11) comprises a capacitor C18, a capacitor C19, a capacitor C20 and a capacitor C24, one end of the capacitor C18, one end of the capacitor C19, one end of the capacitor C20 and one end of the capacitor C24 are all connected with the singlechip U11, and the other end of the capacitor C18, the other end of the capacitor C19, the other end of the capacitor C20 and the other end of the capacitor C24 are all connected with the ground signal GND.
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| WO2009117929A1 (en) * | 2008-03-24 | 2009-10-01 | Yu Zhengguo | Induction heating power supply circuit |
| CN102929311A (en) * | 2012-11-07 | 2013-02-13 | 西北农林科技大学 | Control circuit of intelligent temperature controller |
| CN203894579U (en) * | 2014-01-07 | 2014-10-22 | 北京工商大学 | River lake water quality information remote monitoring main controller device |
| CN206360761U (en) * | 2016-08-17 | 2017-07-28 | 宁波安创电子科技有限公司 | A kind of nitrogen oxide sensor |
| CN107148103A (en) * | 2017-07-07 | 2017-09-08 | 佛山领新信息科技有限公司 | A kind of frequency-conversion microwave oven intelligent control power supply |
| CN208190940U (en) * | 2018-03-12 | 2018-12-04 | 宁波安创电子科技有限公司 | A kind of nitrogen oxide sensor variable-frequency heating control circuit |
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|---|---|
| CN108337745A (en) | 2018-07-27 |
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Effective date of registration: 20240204 Address after: Room 315, Beijing Jingbao Company Office Building, Badachu High tech Park, Shijingshan District, Beijing, 100000 Applicant after: BEIJING CEPCK MEASUREMENT & CONTROL CO.,LTD. Country or region after: China Address before: No. 666, Zhongxing East Road, Xikou Town, Fenghua District, Ningbo City, Zhejiang Province Applicant before: NINGBO ANCHUANG ELECTRONIC TECHNOLOGY CO.,LTD. Country or region before: China |
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