CN108336643A - Active area structure and Terahertz quantum cascaded laser with wideband gain - Google Patents
Active area structure and Terahertz quantum cascaded laser with wideband gain Download PDFInfo
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- CN108336643A CN108336643A CN201810097145.6A CN201810097145A CN108336643A CN 108336643 A CN108336643 A CN 108336643A CN 201810097145 A CN201810097145 A CN 201810097145A CN 108336643 A CN108336643 A CN 108336643A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3205—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures with an active layer having a graded composition in the growth direction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- General Physics & Mathematics (AREA)
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Abstract
The present invention provides a kind of active area structure and the Terahertz quantum cascaded laser with wideband gain, the active area structure is used for Terahertz quantum cascaded laser, to increase the gain bandwidth of the Terahertz quantum cascaded laser, the active area structure includes at least three kinds active areas for being sequentially stacked and having different Terahertz frequencies.The active area structure of the present invention includes at least three kinds active areas with different Terahertz frequencies, the active area structure has wider gain spectral, when the active area structure is used for Terahertz quantum cascaded laser, the gain bandwidth of the Terahertz quantum cascaded laser can be effectively increased so that the Terahertz quantum cascaded laser has the characteristic of wideband gain.
Description
Technical field
The invention belongs to semiconductor photoelectric device applied technical fields, more particularly to a kind of active area structure and with width
Terahertz quantum cascaded laser with gain.
Background technology
Wideband gain has broad application prospects in laser science research, if wherein wideband gain and mode-locking technique knot
The frequency comb (comb) of wide range can be formed altogether.Frequency comb can usually be swashed by short pulse in frequency with for calibration
Light device or nonlinear optical effect generate.Can as frequency comb Terahertz quantum cascaded laser then in metering and high
The spectrum of use of resolution ratio has played important function.
Terahertz quantum cascaded laser is a kind of unipolar lasers that only electronics participates in, and electronics passes through intersubband transitions
Radiate THz wave.As a kind of important terahertz emission source, Terahertz quantum cascaded laser has small, easy of integration
And the advantages that high conversion efficiency, it is a research hotspot in Terahertz field.However, existing Terahertz quantum cascaded laser
The active area of device has single Terahertz frequency, and the gain bandwidth of existing Terahertz quantum cascaded laser is relatively narrow, does not have
Standby wideband gain characteristic.
Therefore, a kind of Terahertz quantum cascaded laser with wideband gain how is provided, to solve in the prior art
The above problem be necessary.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of active area structure and with width
Terahertz quantum cascaded laser with gain increases for solving existing for Terahertz quantum cascaded laser in the prior art
Beneficial narrower bandwidth does not have the problem of wideband gain characteristic.
In order to achieve the above objects and other related objects, the present invention provides a kind of active area structure, the active area structure
For Terahertz quantum cascaded laser, to increase the gain bandwidth of the Terahertz quantum cascaded laser, the active area
Structure includes at least three kinds active areas for being sequentially stacked and having different Terahertz frequencies.
As a preferred embodiment of the present invention, the material of each active area is the material of wide gain spectrum.
As a preferred embodiment of the present invention, the gain spectral of the material of each active area is all higher than 300GHz.
As a preferred embodiment of the present invention, the active area structure includes the first active area being sequentially stacked, second
The wave frequency of three kinds of active areas of active area and third active area, the first active area transmitting is 4.8THz~5.0THz,
The wave frequency of the second active area transmitting is 4.5THz~4.7THz, the wave frequency of the third active area transmitting
For 4.2THz~4.4THz.
As a preferred embodiment of the present invention, each active area includes an at least laminated construction, the lamination knot
Structure includes the GaAs material layers being alternately superimposed on successively and Al0.25Ga0.75As material layers.
As a preferred embodiment of the present invention, the laminated construction includes 5~15 by the GaAs material layers and institute
State Al0.25Ga0.75The alternate cycle that As material layers are constituted.
As a preferred embodiment of the present invention, GaAs material layers described in the second layer are Si to the laminated construction from the bottom to top
Adulterate GaAs material layers.
As a preferred embodiment of the present invention, each active area includes 20~40 layers of laminated construction.
It is at least partly overlapped between the gain spectral of each active area as a preferred embodiment of the present invention.
As a preferred embodiment of the present invention, the region that the gain spectral of each active area is overlapped is no less than each institute
State the 20% of active area gain spectral.
It is described with wideband gain the present invention also provides a kind of Terahertz quantum cascaded laser with bandwidth gain
Terahertz quantum cascaded laser includes：
Substrate；
Active area structure as described in any of the above-described arbitrary scheme, the active area structure are located on the substrate；
Upper contact electrode is located on the active area structure；
Lower contact electrode is located on the substrate.
As a preferred embodiment of the present invention, the substrate is GaAs substrates.
As described above, the active area structure of the present invention and the Terahertz quantum cascaded laser with wideband gain, have
Following advantageous effect：
The active area structure of the present invention includes at least three kinds active areas with different Terahertz frequencies, the active area knot
Structure has wider gain spectral, when the active area structure is used for Terahertz quantum cascaded laser, can be effectively increased
The gain bandwidth of the Terahertz quantum cascaded laser so that the Terahertz quantum cascaded laser has wideband gain
Characteristic；
The Terahertz quantum cascaded laser with wideband gain of the present invention includes by least three kinds with different terahertzs
The active area structure that hereby active area of frequency is constituted, the active area structure have wider gain spectral, can be effectively increased institute
State the gain bandwidth of Terahertz quantum cascaded laser so that the Terahertz quantum cascaded laser has the spy of wideband gain
Property.
Description of the drawings
Fig. 1 is shown as the dimensional structure diagram of the active area structure provided in the embodiment of the present invention one.
Fig. 2 is shown as the cross section structure signal of the laminated construction in the active area structure provided in the embodiment of the present invention one
Figure.
Fig. 3 is shown as the cross section structure signal of the first active area in the active area structure provided in the embodiment of the present invention one
Figure.
Fig. 4 is shown as the energy band diagram of the first active area in the active area structure provided in the embodiment of the present invention one.
Fig. 5 is shown as the energy band diagram of the second active area in the active area structure provided in the embodiment of the present invention one.
Fig. 6 is shown as the energy band diagram of the third active area in the active area structure provided in the embodiment of the present invention one.
Fig. 7 is shown as the gain bandwidth figure of the active area structure provided in the embodiment of the present invention one；Wherein, 1. curve is the
The frequency gain chart of one active area, 2. curve is the frequency gain chart of the second active area, and 3. curve is third active area
Frequency gain chart, 4. curve is the frequency gain chart of the Terahertz quantum cascaded laser with bandwidth gain.
Fig. 8 is shown as the vertical of the Terahertz quantum cascaded laser with wideband gain provided in the embodiment of the present invention two
Body structural schematic diagram.
Component label instructions
1 active area structure
11 first active areas
12 second active areas
13 third active areas
14 laminated construction
141 GaAs material layers
1411 Si adulterate GaAs material layers
142 Al0.25Ga0.75As material layers
2 substrates
Electrode is contacted on 3
4 times contact electrodes
Specific implementation mode
Illustrate that embodiments of the present invention, those skilled in the art can be by this specification below by way of specific specific example
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
It please refers to Fig.1 to Fig. 8.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can be a kind of random change, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 1, the present invention provides a kind of active area structure 1, the active area structure 1 is for Terahertz quantum cascaded
Laser (THz Quantum Cascade Laser, QCL), to increase the gain of the Terahertz amount quantum cascade laser
Bandwidth, the active area structure 1 include at least three kinds active areas for being sequentially stacked and having different Terahertz frequencies.
As an example, the material of each active area is the material of wide gain spectrum.Specifically, the material of the active area
Gain spectral be all higher than 300GHz (girz).
As an example, as shown in Figure 1, including the first active area 11 being sequentially stacked with the active area structure 1, second having
13 3 kinds of active areas of source region 12 and third active area are as an example, the wave frequency of first active area 11 transmitting is
4.8THz (Terahertz)~5.0THz, the wave frequency that second active area 12 emits is 4.5THz~4.7THz, described
The wave frequency that third active area 13 emits is 4.2THz~4.4THz.Preferably, the electricity that first active area 11 emits
Magnetic wave frequency is 4.92THz, and the wave frequency that second active area 12 emits is 4.60THz, the third active area 13
The wave frequency of transmitting is 4.31THz.
As an example, please referring to Fig. 2 and Fig. 3, each active area includes an at least laminated construction 14, the lamination knot
Structure 14 is referring to Fig. 2, the laminated construction 14 includes the GaAs material layers 141 being alternately superimposed on successively and Al0.25Ga0.75As materials
Layer 142.
As an example, with one layer of GaAs material layer 141 and one layer of Al0.25Ga0.75As material layers 142 are used as one
The number in a period, the above-mentioned period that the laminated construction 14 includes can be set according to actual needs, it is preferable that described
Laminated construction 14 includes 5~15 by the GaAs material layers 141 and the Al0.25Ga0.75The alternating that As material layers 142 are constituted
In the period, it is further preferable that in the present embodiment, the laminated construction 14 includes 9 above-mentioned periods.
As an example, it is doped layer to have one layer in GaAs material layers 141 in the laminated construction 14, it is preferable that
In the present embodiment, the laminated construction 14 from the bottom to top the second layer the GaAs material layers 141 be Si adulterate GaAs material layers.
As an example, each active area includes 20~40 layers of laminated construction 14, with the active area structure 14
For first active area 11, second active area 12 and the third active area 13, the active area structure 14
Described in first active area 11 including 20~40 layers of laminated construction 14 including 20~40 layers of laminated construction 14
Second active area 12 and the third active area 13 for including 20~40 layers of laminated construction 14.Wherein, Fig. 3 is with described first
Active area 11 is including 20~40 layers of laminated construction 14 as an example, people's active area 12 and the third active area 13
Structure it is roughly the same with the structure of first active area 11 shown in Fig. 3.Preferably, in the present embodiment, described first
Active area 11, second active area 12 and the third active area 13 include 25 layers of laminated construction 14.
It should be noted that the knot of first active area 11, second active area 12 and the third active area 13
Structure answer it is roughly the same, be embodied as first active area 11, second active area 12 and the third active area 13 packet
The GaAs material layers 141 included and the Al0.25Ga0.75The number of plies of As material layers 142 is identical, and first active area 11,
The thickness of GaAs material layers 141 described in second active area 12 and the third active area 13 is roughly the same, and described
Al described in one active area 11, second active area 12 and the third active area 130.25Ga0.75The thickness of As material layers 142
It is roughly the same.Certainly,；In other examples, also allow first active area 11, second active area 12 and the third
There is some materials layer thickness variant between active area 13.
As an example, it is at least partly overlapped between the gain spectral of each active area, it is wrapped with the active area structure 1
For including first active area 11, second active area 12 and the third active area 13, first active area 11
There is overlapping each other between the gain spectral three of gain spectral, the gain spectral of second active area 12 and the third active area 13.
The size in the overlapped region of gain spectral of each active area can be set according to actual needs, it is preferable that this reality
It applies in example, the gain spectral overlapping areas of each active area is no less than the 20% of each active area gain spectral；For example, institute
State the gain spectral of the first active area 11 and the gain spectral of second active area 12 and the gain spectral weight of the third active area 13
Folded region is no less than the 20% of the gain spectral of first active area 11；Second active area 12 and the third active area
13 are same as above.The structure of each active area is roughly the same in the active area structure 1, and the gain spectral of each active area is mutual
Overlapping may insure to make when the active area structure 1 is applied to the Terahertz quantum cascaded laser with wideband gain in this way
Obtain the gain bandwidth broadening of the Terahertz quantum cascaded laser.
The active area structure 1 is designed according to transition matrix, in the following, including described the with the active area structure 1
One active area 11, second active area 12 and the third active area 13 are as an example, according to transition matrix, for one
Schrodinger equation is tieed up, wave function Ψ (x) meets：
Wherein, h indicates Planck's constant, m*Indicate that effective mass, V indicate that applying electrical potential, E are self-energy, z indicates whole
A 1 thickness of the active area structure.If the active area structure 1 is discrete turns to N=3500 layers by entire, arbitrary two
Then meet between a continuous layer j and j-1：
Ψj-1(zj-1)=Ψj(zj) (2)
And the form of one-dimensional Solution of The Schrodinger Equation is commonly considered as：
Wherein,
Applying electrical potential VjThen meet V (z, ε)=V (z, 0)-ez ε with z changing rules, wherein ε indicates that extra electric field is strong
Degree, e indicate unit charge electricity.
Formula (2) (3) (4) is indicated with the form of matrix：
So then have for the entire active area structure 1：
In view of boundary condition A0=0 and BN-1=0, it can then be obtained from formula (8)：
α22(E)=0 (9)
Using the above method, in extra electric field ε=6 × 105Under the conditions of V/cm, specific frequency can be obtained further according to E=hv
The value of z when rate v.The frequency v of our needs is found by the exhaustion to z in MATLAB softwares.It may finally obtain as follows
As a result：
The thickness parameter of layers of material layer is in one laminated construction 14 of first active area 11：4.1/3.8/1.0/
22.4/1.1/13.3/2.1/11.8/3.1/9.6/3.1/8.7/3.1/7.7/3.1/17.2/3.4/14.8nm；Described second has
The thickness parameter of layers of material layer is in one laminated construction 14 of source region 12：4.1/3.8/1.0/23.6/1.0/13.8/2.1/
11.8/3.1/9.6/3.1/8.7/3.1/7.7/3.1/17.2/3.4/14.8nm；One lamination knot of the third active area 13
The thickness parameter of layers of material layer is in structure 14：4.1/3.0/1.0/24.4/1.0/13.3/2.1/11.8/3.1/9.6/3.1/
8.7/3.1/7.7/3.1/17.2/3.4/14.8nm；Wherein, in the numerical value in thickness parameter, overstriking font represents
Al0.25Ga0.75As, non-overstriking font represent GaAs, and underscore layer represents Si doped layers, doping concentration 1.2 × 1017cm-3；That is institute
It is Al to state laminated construction 140.25Ga0.75The laminated construction that As and GaAs is alternately superimposed on successively.
Then, first active area 11, second active area 12 and the third active area 13 are grown successively, often
A active region growth 25 times, i.e., described first active area 11 include 25 laminated construction 14, second active area
12 include 25 laminated construction 14 including 25 laminated construction 14, the third active area, are just formed as shown in Figure 1
The active area structure 1, the energy band diagram of first active area 11 as shown in figure 4, second active area 12 energy band diagram
As shown in figure 5, the energy band diagram of the third active area 13 is as shown in Figure 6.It then, can computation bandwidth increasing using following formula
Benefit：
For superposition i-th of active area (wherein, i=1 indicate the first active area 11, i=2 indicate the second active area 12,
I=3 indicates third active area 13), e=1.6 × 10 in above formula-19C indicates that unit charge electricity, r=1meV indicate that energy level is wide
Degree, ε0=8.85 × 10-12c2/ cm indicates dielectric constant, nref=3.6 indicate that relative index of refraction, L indicate active area thickness, λ tables
Oscillography is long, and E indicates self-energy,Indicate that reduced Planck constant, ω indicate that angular frequency, z indicate entire dipole matrix element
(dipole matrix element), these method of transition matrices by are calculated.It can thus acquire respectively described
First active area 11, the wideband gain of second active area 12 and the third active area 13 and the active area structure 1
Wideband gain, obtained structure are as shown in Figure 7；Wherein, 1. curve be the first active area frequency gain chart, 2. curve is the
The frequency gain chart of two active areas, 3. curve is the frequency gain chart of third active area, and 4. curve is described with bandwidth
The frequency gain chart of the Terahertz quantum cascaded laser of gain.
The Terahertz quantum cascaded laser of wideband gain when being applied to to(for) the active area structure 1 can then pass throughWherein N1=N2=N3=25 indicate first active area 11, second active area 12
And the number of the growth of the third active area 13.- 3dB the bands of the wideband gain of the active area structure 1 are finally calculated
Width become for 986GHz, if the active area of the active area structure 1 is one of them rather than first active area 11,
Second active area 12 and the third active area 13 3 stack up, it-three dB bandwidth only about 200GHz.
Embodiment two
Incorporated by reference to Fig. 1 to Fig. 7 refering to Fig. 8, it is Terahertz quantum cascaded sharp with bandwidth gain that the present invention also provides a kind of
Light device, the Terahertz quantum cascaded laser with wideband gain include：Substrate 2；As described in above-mentioned either a program
Active area structure 1, the active area structure 1 are located on the substrate 2；The concrete structure and characteristic of the active area structure 1 are asked
Refering to
Embodiment one, is not repeated herein；Upper contact electrode 3, the upper contact electrode 3 are located at the active area structure 1
On；Lower contact electrode 4, the lower contact electrode 4 are located on the substrate.
As an example, the substrate 2 is GaAs substrates, it is preferable that the substrate 2 is heavily doped N-type GaAs substrates.
As an example, the Terahertz quantum cascaded laser with wideband gain uses long cavity configuration, using long chamber
Structure can ensure that spectrum longitudinal mode spacing is small, to allow spectrum to have higher resolution ratio.It should be noted that so-called long chamber knot
Structure refers to that the order of magnitude of the length of the resonant cavity of the Terahertz quantum cascaded laser with wideband gain is more than wavelength
The order of magnitude.Certainly, in other examples, the Terahertz quantum cascaded laser with wideband gain can also use microcavity
Structure (i.e. the length of resonant cavity and wavelength is in an order of magnitude).
As an example, metal electrode may be used in the upper contact electrode 3 and the lower contact electrode 4, it is preferable that institute
The material for stating contact electrode 3 and the lower contact electrode 4 all can be at least one of Ti (titanium) and Au (gold).
In conclusion the present invention provides a kind of active area structure and the Terahertz quantum cascaded laser with wideband gain
Device, the active area structure is used for Terahertz quantum cascaded laser, to increase the increasing of the Terahertz quantum cascaded laser
Beneficial bandwidth, the active area structure include at least three kinds active areas for being sequentially stacked and having different Terahertz frequencies.The present invention
Active area structure include at least three kinds active areas with different Terahertz frequencies, the active area structure has wider increasing
Benefit spectrum can be effectively increased the Terahertz quantum when the active area structure is used for Terahertz quantum cascaded laser
The gain bandwidth of cascaded laser so that the Terahertz quantum cascaded laser has the characteristic of wideband gain；The present invention's
Terahertz quantum cascaded laser with wideband gain includes by at least three kinds active area structures with different Terahertz frequencies
At active area structure, the active area structure have wider gain spectral, can be effectively increased described Terahertz quantum cascaded
The gain bandwidth of laser so that the Terahertz quantum cascaded laser has the characteristic of wideband gain.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology can all carry out modifications and changes to above-described embodiment without violating the spirit and scope of the present invention.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should by the present invention claim be covered.
Claims (12)
1. a kind of active area structure, which is characterized in that the active area structure is used for Terahertz quantum cascaded laser, to increase
The gain bandwidth of the Terahertz amount quantum cascade laser, the active area structure are sequentially stacked and have including at least three kinds
The active area of different Terahertz frequencies.
2. active area structure according to claim 1, which is characterized in that the material of each active area is wide gain spectrum
Material.
3. active area structure according to claim 2, which is characterized in that the gain spectral of the material of each active area is big
In 300GHz.
4. active area structure according to claim 1, which is characterized in that the active area structure includes be sequentially stacked
Three kinds of one active area, the second active area and third active area active areas, the wave frequency that first active area emits are
The wave frequency of 4.8THz~5.0THz, the second active area transmitting are 4.5THz~4.7THz, the third active area
The wave frequency of transmitting is 4.2THz~4.4THz.
5. active area structure according to claim 1, which is characterized in that each active area includes an at least lamination knot
Structure, the laminated construction include the GaAs material layers being alternately superimposed on successively and Al0.25Ga0.75As material layers.
6. active area structure according to claim 5, which is characterized in that the laminated construction includes 5~15 by described
GaAs material layers and the Al0.25Ga0.75The alternate cycle that As material layers are constituted.
7. active area structure according to claim 5, which is characterized in that the laminated construction is from the bottom to top described in the second layer
GaAs material layers are that Si adulterates GaAs material layers.
8. active area structure according to claim 5, which is characterized in that each active area includes described in 20~40 layers
Laminated construction.
9. active area structure according to any one of claim 1 to 8, which is characterized in that the gain of each active area
It is at least partly overlapped between spectrum.
10. active area structure according to claim 9, which is characterized in that the gain spectral of each active area is overlapped
Region be no less than the 20% of each active area gain spectral.
11. a kind of Terahertz quantum cascaded laser with wideband gain, which is characterized in that described that there is wideband gain too
Hertz quantum cascade laser includes：
Substrate；
Active area structure as described in any one of claims 1 to 10, the active area structure are located on the substrate；
Upper contact electrode is located on the active area structure；
Lower contact electrode is located on the substrate.
12. the Terahertz quantum cascaded laser according to claim 11 with wideband gain, which is characterized in that described
Substrate is GaAs substrates.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111044481A (en) * | 2018-10-12 | 2020-04-21 | 中国科学院上海微系统与信息技术研究所 | Near-field microscope system and construction method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101127432A (en) * | 2006-08-16 | 2008-02-20 | 中国科学院半导体研究所 | Ti Hz quanta cascaded semiconductor laser material and its growth method |
| JP2010278326A (en) * | 2009-05-29 | 2010-12-09 | Hamamatsu Photonics Kk | Quantum cascade laser |
| CN103915758A (en) * | 2014-03-26 | 2014-07-09 | 中国科学院上海微系统与信息技术研究所 | Terahertz quantum cascade laser of multiple-mode interface structure and manufacturing method thereof |
| WO2014189015A1 (en) * | 2013-05-23 | 2014-11-27 | 浜松ホトニクス株式会社 | Quantum-cascade laser |
-
2018
- 2018-01-31 CN CN201810097145.6A patent/CN108336643B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101127432A (en) * | 2006-08-16 | 2008-02-20 | 中国科学院半导体研究所 | Ti Hz quanta cascaded semiconductor laser material and its growth method |
| JP2010278326A (en) * | 2009-05-29 | 2010-12-09 | Hamamatsu Photonics Kk | Quantum cascade laser |
| WO2014189015A1 (en) * | 2013-05-23 | 2014-11-27 | 浜松ホトニクス株式会社 | Quantum-cascade laser |
| CN103915758A (en) * | 2014-03-26 | 2014-07-09 | 中国科学院上海微系统与信息技术研究所 | Terahertz quantum cascade laser of multiple-mode interface structure and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111044481A (en) * | 2018-10-12 | 2020-04-21 | 中国科学院上海微系统与信息技术研究所 | Near-field microscope system and construction method thereof |
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