CN108336099B - Display substrate, preparation method thereof and display device - Google Patents

Display substrate, preparation method thereof and display device Download PDF

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Publication number
CN108336099B
CN108336099B CN201810265798.0A CN201810265798A CN108336099B CN 108336099 B CN108336099 B CN 108336099B CN 201810265798 A CN201810265798 A CN 201810265798A CN 108336099 B CN108336099 B CN 108336099B
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insulating layer
substrate
metal
lead
inorganic insulating
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CN108336099A (en
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王伟
詹志锋
王研鑫
杨恕权
石佳凡
黄鹏
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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Priority to US16/338,455 priority patent/US11894389B2/en
Priority to PCT/CN2018/111592 priority patent/WO2019184319A1/en
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    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/127Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/1259Multistep manufacturing methods
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    • H10K59/131Interconnections, e.g. wiring lines or terminals

Abstract

The invention discloses a display substrate, a preparation method thereof and a display device, wherein the display substrate comprises a lead bending area; in the lead bending area, the display substrate comprises a substrate, and an inorganic insulating layer and a metal layer which are stacked on the substrate; wherein the metal layer comprises a plurality of discrete metal leads, and an orthographic projection of the metal leads on the substrate covers an orthographic projection of the inorganic insulating layer on the substrate. In a lead bending area of the display substrate, orthographic projections of discrete metal leads on the substrate cover orthographic projections of the inorganic insulating layers on the substrate, the inorganic insulating layers are arranged right below one side of each metal lead close to the substrate, and the inorganic insulating layers are not arranged outside the metal lead area, so that a path of a crack of the metal lead fracture along the inorganic insulating layers is blocked, and the problem that more metal leads fracture due to crack propagation is effectively solved.

Description

Display substrate, preparation method thereof and display device
Technical Field
The invention relates to the technical field of display, in particular to a display substrate, a preparation method of the display substrate and a display device.
Background
With the development of a full-screen frameless technology, each frame of a display panel is narrower and narrower, a lead Bending (Pad Bending) technology is generally adopted to bend a non-display part of the display panel to the back of the display panel, so that the narrow frame of the display panel is realized, but in the Bending process, a lead break is easily caused in a lead Bending area, cracks can spread to other lead ends along an area below a lead layer, so that more leads are broken, and poor display is caused.
Disclosure of Invention
The invention provides a display substrate, a preparation method and a display device, and aims to solve the problem that cracks in a lead bending area are easy to spread in the prior art.
In a first aspect, the present invention provides a display substrate, including a lead bending region;
in the lead bending area, the display substrate comprises a substrate, and an inorganic insulating layer and a metal layer which are stacked on the substrate;
wherein the metal layer comprises a plurality of discrete metal leads, and an orthographic projection of the metal leads on the substrate covers an orthographic projection of the inorganic insulating layer on the substrate.
Optionally, the substrate is a flexible substrate.
Optionally, the material of the substrate includes: at least one of polyimide, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polycarbonate, and cellulose acetate propionate.
Optionally, the inorganic insulating layer has a thickness of
Figure BDA0001611377820000011
Optionally, the material of the inorganic insulating layer includes: silicon oxide, silicon nitride, or silicon oxide.
In a second aspect, the present invention further provides a method for manufacturing a display substrate, including:
sequentially forming an inorganic insulating layer and a metal layer on the substrate of the lead bending area;
forming a plurality of discrete metal leads on the metal layer by a composition process by adopting a first mask;
and removing the inorganic insulating layer outside the metal lead area in the lead bending area.
Optionally, the removing the inorganic insulating layer outside the metal lead region in the lead bending region includes:
and removing the inorganic insulating layer outside the metal lead wire region in the lead wire bending region by a composition process by adopting a second mask.
Optionally, the forming a plurality of discrete metal leads on the metal layer by a patterning process using a first mask includes:
etching the metal layer by using a first mask to form a plurality of discrete metal leads by using a first etching process;
the inorganic insulating layer outside the metal lead wire area in the lead wire bending area is removed, and the method comprises the following steps:
and etching and removing the inorganic insulating layer outside the metal lead wire area in the lead wire bending area by using a second etching process.
Optionally, the sequentially forming an inorganic insulating layer and a metal layer on the substrate in the lead bending region includes:
providing a substrate;
forming a plurality of insulating layers on a substrate;
patterning the multilayer insulating layer of the lead bending area to form the inorganic insulating layer;
and forming a metal layer.
Optionally, the forming a plurality of insulating layers on the substrate includes:
sequentially forming a buffer layer, a first insulating layer, a second insulating layer and an interlayer insulating layer on a substrate;
the patterning process is performed on the multilayer insulating layer of the lead bending region to form the inorganic insulating layer, and the method comprises the following steps:
etching to remove the interlayer insulating layer, the second insulating layer and the first insulating layer in the lead bending area;
and partially etching the buffer layer of the lead bending area to form the inorganic insulating layer.
Optionally, the substrate is a flexible substrate.
Optionally, the material of the substrate includes: at least one of polyimide, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polycarbonate, and cellulose acetate propionate.
Optionally, the buffer layer is made of: at least one of silicon oxide, silicon nitride, and silicon oxynitride.
In a third aspect, the present invention further provides a display device, including the above display substrate.
Compared with the prior art, the embodiment of the invention has the following advantages:
the display substrate comprises the lead bending area, wherein the orthographic projection of the discrete metal lead on the substrate covers the orthographic projection of the inorganic insulating layer on the substrate in the lead bending area, the inorganic insulating layer is arranged right below one side of the metal lead close to the substrate, and the inorganic insulating layer is not arranged outside the metal lead area, so that a path of a crack of the metal lead which is broken along the inorganic insulating layer is blocked, and the problem of more metal leads which are broken due to crack propagation is effectively avoided.
Drawings
FIG. 1 is a schematic diagram of a prior art display substrate;
FIG. 2 is an enlarged view of portion A' of FIG. 1;
FIG. 3 is a schematic cross-sectional view of a '-b' of FIG. 2;
FIG. 4 is a schematic cross-sectional view of c '-d' of FIG. 2;
FIG. 5 is a schematic structural diagram of a display substrate according to an embodiment of the invention;
FIG. 6 is an enlarged view of portion A of FIG. 5;
FIG. 7 is a schematic cross-sectional view of a-b of FIG. 6;
FIG. 8 is a schematic cross-sectional view of C-d of FIG. 6;
FIG. 9 is a flowchart illustrating a method of fabricating a display substrate according to an embodiment of the present invention;
FIG. 10 is a flow chart of another method for fabricating a display substrate according to an embodiment of the present invention;
FIG. 11 is a flowchart illustrating a method of forming an inorganic insulating layer and a metal layer in a lead bending region according to an embodiment of the present invention;
fig. 12 a-d are schematic structural views of display substrates formed during the fabrication process of the display substrates.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
With the development of full screen frameless technology, in order to shorten the frame of the display panel, as shown in fig. 1, it is usually necessary to bend the bonding area at the edge of the display panel to the back of the display panel, and as shown in fig. 2, an enlarged schematic view of a 'part of the bonding area is shown, and as shown in fig. 2, the area includes an insulating layer formed on a substrate and a plurality of discrete metal leads formed on the insulating layer, wherein the structure at the lead bending area 1' is different from the layer structure at the two sides of the area, the a '-b' cross-sectional view of the metal leads is shown in fig. 3, and the c '-d' cross-sectional view between the metal leads is shown in fig. 4. One side of the lead bending region 1' is connected with the display region of the display panel, and the other side is connected with the driving circuit part bent to the back of the display panel. The two sides of the lead bending area 1' are connected with a display area and a drive circuit part, a plurality of layers of insulating layers are formed on a substrate, only one part of the insulating layer closest to the substrate is reserved at the lead bending area 1', namely, a groove is formed at the lead bending area 1', then a metal lead is formed on the insulating layer of the structure, and an organic insulating protective layer and the like covering the metal lead are formed.
However, the metal lead of the lead bending region 1 'is easily broken during the bending process, and cracks propagate along the inorganic insulating layer 12' under the lead to other lead terminals, resulting in more lead breakage, causing poor display.
In order to solve the above problems, embodiments of the present invention provide a display substrate, which includes a lead bending region 1, and in the lead bending region 1, the display substrate includes a base 11, and an inorganic insulating layer 12 and a metal layer stacked on the base 11, as shown in fig. 5 to 8. Wherein the metal layer comprises a plurality of discrete metal leads 13, and the orthographic projection of the metal leads 13 on the substrate 11 covers the orthographic projection of the inorganic insulating layer 12 on the substrate.
In the display substrate according to the embodiment of the present invention, in the lead bending region 1, the orthographic projection of the discrete metal lead 13 on the base 11 covers the orthographic projection of the inorganic insulating layer 12 on the base 11, and as shown in fig. 7 and 8, the metal lead 13 has the inorganic insulating layer 12 directly below the side close to the base 11, and does not have the inorganic insulating layer outside the metal lead 11 region. Because the fracture of the metal lead 13 is caused by the fracture of the inorganic insulating layer 12 below the metal lead 13, in the embodiment of the invention, the inorganic insulating layer is not arranged outside the metal lead 13 area, so that the path of the fracture crack of the metal lead 13 along the inorganic insulating layer 12 is blocked, and the problem that more metal leads 13 are fractured due to the crack propagation is effectively avoided.
Specifically, the substrate 11 is a flexible substrate so as to be bent in the lead bending region 1, and the material thereof may include: at least one of Polyimide (PI), Polyethersulfone (PES), Polyacrylate (PAR), Polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, Polycarbonate (PC), and Cellulose Acetate Propionate (CAP). For example, the flexible substrate may be formed by combining two PI layers and an inorganic thin film layer therebetween, and the specific structure of the substrate 11 is not limited in the present invention.
In the lead bending region 1, the thickness of the inorganic insulating layer 12 is
Figure BDA0001611377820000051
The inorganic insulating layer 12 can be ensured not only in its bendability but also in its insulating property. The material may include at least one of silicon nitride, silicon oxide, and silicon oxynitride.
It is understood that other layer structures are disposed on the side of the metal layer away from the substrate 11, and considering that the organic insulating material is relatively flexible and not easily broken, the organic insulating layer is typically disposed on the side of the metal layer away from the substrate 11. As shown in fig. 7 and 8, an organic insulating layer 14 is further formed above the metal lead 13 to protect the metal lead 13. The material of the organic insulating layer 14 may include: at least one of polyimide, acrylic, benzocyclobutene (BCB) and hexamethyldisiloxane.
The embodiment of the invention also provides a preparation method of the display substrate, which is shown in fig. 9 and comprises the following steps:
and step 100, sequentially forming an inorganic insulating layer and a metal layer on the substrate of the lead bending area.
And 200, forming a plurality of discrete metal leads on the metal layer by a composition process by adopting a first mask.
The metal layer is etched to form discrete metal leads, and the schematic structural diagram of the display substrate of the lead bending region formed through the step is shown in fig. 12a, which is a schematic cross-sectional diagram of the lead bending region along the X direction of fig. 6.
And step 300, removing the inorganic insulating layer outside the metal lead area in the lead bending area.
After this step, a cross-sectional view of the display substrate in the X direction of the formed lead bent region is shown in fig. 12 b.
In the embodiment of the present invention, the specific process of forming the inorganic insulating layer and the metal layer on the substrate in the lead bending region and the specific process of forming the plurality of discrete metal leads on the metal layer by the patterning process using the first mask are not limited in the present invention, as long as the inorganic insulating layer outside the metal lead region in the lead bending region is removed after the above two steps.
Through the steps, the inorganic insulating layer outside the metal lead wire area in the lead wire bending area is removed, the path of crack propagation is blocked, and the problem that more metal lead wires are broken due to crack propagation can be effectively solved. It is understood that after step 300, other layer structures of the display substrate need to be formed, and the subsequent processes are conventional processes and will not be described herein again.
It should be noted that the patterning process involved in the present invention may include a photolithography process and an etching step. The photoetching process comprises the processes of film forming, exposure, development and the like, and the process of forming patterns by utilizing photoresist, a mask plate, an exposure machine and the like; the etching may be dry etching or wet etching, and may also include printing, ink jetting, and other processes for forming a predetermined pattern. The corresponding patterning process may be selected in accordance with the structures formed by the present invention.
In one embodiment, the step 300 of removing the inorganic insulating layer outside the metal lead region in the lead bending region may include: and removing the inorganic insulating layer outside the metal lead wire region in the lead wire bending region by a composition process by adopting a second mask.
The specific process can be that photoresist is coated on the metal layer, the second mask is adopted, the processes of exposure, development, etching and the like are carried out on the lead bending area, and the inorganic insulating layer outside the metal lead area in the lead bending area is removed through etching.
In another embodiment, as shown with reference to FIG. 10, the method comprises the following steps:
and step 100, sequentially forming an inorganic insulating layer and a metal layer on the substrate of the lead bending area.
Step 201, etching the metal layer by using a first mask to form a plurality of discrete metal leads by using a first etching process.
The first etching process in the step can be a dry etching process or a wet etching process, and the metal layer is etched by using the etching process to form a plurality of discrete metal leads. For example, a dry etching process may be used to etch the metal layer with chlorine gas to form a plurality of discrete metal leads.
It is understood that the above steps further include: the processes of coating photoresist, exposing, developing, etc. are not described herein again. After this step, as shown in fig. 12c, an inorganic insulating layer 12, a metal lead 13, and a photoresist layer 15 are sequentially formed on the base 11.
Step 301, removing the inorganic insulating layer outside the metal lead region in the lead bending region by etching by using a second etching process.
In this step, the etching method is changed (e.g., etching gas is changed), the structure formed in step 201 is etched for the second time, and the inorganic insulating layer outside the metal lead region is etched by the second etching process, so as to remove the inorganic insulating layer in the lead bending region. The second etching process may be a dry etching process, for example, carbon tetrafluoride and oxygen are mixed in a certain ratio to etch the inorganic insulating layer, so as to remove the inorganic insulating layer outside the metal lead region in the lead bending region.
After the etching is completed, the photoresist applied in the above two steps is removed, resulting in the structure of fig. 12 b.
Referring to fig. 11, step 100 of the foregoing embodiment may specifically include the following steps:
step 101, providing a substrate.
Step 102, forming a plurality of insulating layers on a substrate.
The step may specifically include sequentially forming a buffer layer, a first insulating layer, a second insulating layer, and an interlayer insulating layer on the substrate.
And 103, patterning the multilayer insulating layer in the lead bending area to form the inorganic insulating layer.
The step can be specifically divided into two times of etching, the multilayer insulating layer is subjected to patterning treatment, and the interlayer insulating layer, the second insulating layer and the first insulating layer in the bending region are etched and removed; and then, partially etching the buffer layer in the bending area to form the inorganic insulating layer. After this step, a cross-sectional view of the lead bending region of the display substrate in the Y direction is shown in fig. 12 d. It is understood that the buffer layer 21, the first insulating layer 22, the second insulating layer 23, and the interlayer insulating layer 24 remain outside the lead bending region.
Step 104, forming a metal layer.
In the above embodiment, the substrate is a flexible substrate so as to be bent in the lead bending region, and the material of the substrate may include: at least one of Polyimide (PI), Polyethersulfone (PES), Polyacrylate (PAR), Polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, Polycarbonate (PC), and Cellulose Acetate Propionate (CAP). For example, the flexible substrate may be formed by combining two PI layers and an inorganic thin film layer therebetween, and the specific structure of the substrate 11 is not limited in the present invention.
The buffer layer is made of the following materials: at least one of silicon oxide, silicon nitride, and silicon oxynitride. In the lead bending region, the thickness of the inorganic insulating layer of the rest part etched by the buffer layer is
Figure BDA0001611377820000081
The bending property of the inorganic insulating layer can be ensured, and the insulating property of the inorganic insulating layer can also be ensured. The material may include at least one of silicon nitride, silicon oxide, and silicon oxynitride.
The embodiment of the invention also provides a display device, which comprises the display substrate of the embodiment, and the display device can be a display panel, and can also be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, electronic paper and the like.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the system embodiment, since it is basically similar to the method embodiment, the description is simple, and for the relevant points, refer to the partial description of the method embodiment.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the embodiments of the invention.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (14)

1. A display substrate is characterized by comprising a lead bending area;
in the lead bending area, the display substrate comprises a substrate, and an inorganic insulating layer and a metal layer which are stacked on the substrate;
wherein the metal layer comprises a plurality of discrete metal leads, and an orthographic projection of the metal leads on the substrate covers an orthographic projection of the inorganic insulating layer on the substrate; wherein the metal lead has an inorganic insulating layer directly below a side close to the substrate;
wherein, outside the lead bending region, an inorganic insulating layer is arranged between the plurality of discrete metal leads; an organic insulating layer is arranged above the metal lead; wherein one end of the metal lead is completely covered by the organic insulating layer, and the other end is partially covered by the organic insulating layer.
2. The display substrate of claim 1, wherein the substrate is a flexible substrate.
3. The display substrate of claim 2, wherein the base comprises: at least one of polyimide, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polycarbonate, and cellulose acetate propionate.
4. The display substrate according to any one of claims 1 to 3, wherein the inorganic insulating layer has a thickness of
Figure FDA0003044391630000011
5. The display substrate according to any one of claims 1 to 3, wherein the material of the inorganic insulating layer comprises: at least one of silicon oxide, silicon nitride, and silicon oxynitride.
6. A method for preparing a display substrate is characterized by comprising the following steps:
sequentially forming an inorganic insulating layer and a metal layer on the substrate of the lead bending area;
forming a plurality of discrete metal leads on the metal layer by a composition process by adopting a first mask; wherein an orthographic projection of the metal lead on the substrate covers an orthographic projection of the inorganic insulating layer on the substrate; wherein the metal lead has an inorganic insulating layer directly below a side close to the substrate;
removing the inorganic insulating layer outside the metal lead wire area in the lead wire bending area;
wherein, outside the lead bending region, an inorganic insulating layer is arranged between the plurality of discrete metal leads; an organic insulating layer is arranged above the metal lead; wherein one end of the metal lead is completely covered by the organic insulating layer, and the other end is partially covered by the organic insulating layer.
7. The method for manufacturing a display substrate according to claim 6, wherein the removing of the inorganic insulating layer outside the metal lead region in the lead bending region comprises:
and removing the inorganic insulating layer outside the metal lead wire region in the lead wire bending region by a composition process by adopting a second mask.
8. The method for manufacturing a display substrate according to claim 6, wherein the forming a plurality of discrete metal leads on the metal layer by a patterning process using the first mask comprises:
etching the metal layer by using a first mask to form a plurality of discrete metal leads by using a first etching process;
the inorganic insulating layer outside the metal lead wire area in the lead wire bending area is removed, and the method comprises the following steps:
and etching and removing the inorganic insulating layer outside the metal lead wire area in the lead wire bending area by using a second etching process.
9. The method for manufacturing a display substrate according to claim 6, wherein the sequentially forming an inorganic insulating layer and a metal layer on the base of the lead bending region comprises:
providing a substrate;
forming a plurality of insulating layers on a substrate;
patterning the multilayer insulating layer of the lead bending area to form the inorganic insulating layer;
and forming a metal layer.
10. The method of manufacturing a display substrate according to claim 9, wherein the forming a plurality of insulating layers on a base includes:
sequentially forming a buffer layer, a first insulating layer, a second insulating layer and an interlayer insulating layer on a substrate;
the patterning process is performed on the multilayer insulating layer of the lead bending region to form the inorganic insulating layer, and the method comprises the following steps:
etching to remove the interlayer insulating layer, the second insulating layer and the first insulating layer in the lead bending area;
and partially etching the buffer layer of the lead bending area to form the inorganic insulating layer.
11. The method for manufacturing a display substrate according to claim 9, wherein the substrate is a flexible substrate.
12. The method of claim 11, wherein the substrate comprises: at least one of polyimide, polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polycarbonate, and cellulose acetate propionate.
13. The method of claim 10, wherein the buffer layer is made of a material selected from the group consisting of: at least one of silicon oxide, silicon nitride, and silicon oxynitride.
14. A display device comprising the display substrate according to any one of claims 1 to 5.
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