CN108321298A - A kind of high efficiency planar heterojunction perovskite thin film solar cell and preparation method - Google Patents

A kind of high efficiency planar heterojunction perovskite thin film solar cell and preparation method Download PDF

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CN108321298A
CN108321298A CN201810143862.8A CN201810143862A CN108321298A CN 108321298 A CN108321298 A CN 108321298A CN 201810143862 A CN201810143862 A CN 201810143862A CN 108321298 A CN108321298 A CN 108321298A
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CN108321298B (en
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李炫华
王双洁
仝腾腾
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Northwestern Polytechnical University
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Abstract

The present invention relates to a kind of high efficiency planar heterojunction perovskite thin film solar cell and preparation methods, and DMSO solution (solvents of dissolving perovskite precursor species) is added in the solution of hole transmission layer, hole transmission layer is made by spin-coating method.Since the oxygen atom in DMSO contains lone pair electrons, the CH of the exposed non-bonding of perovskite grain boundaries can be effectively combined by electrostatic interaction3NH3 +, improve the crystalline quality of perovskite crystal, and then improve the light absorpting ability of perovskite thin film；Separately since DMSO can dissolve perovskite thin film, then partial holes transmission material will permeate forms the mixed layer that one layer of perovskite and hole mobile material interpenetrate on the surface of calcium titanium ore bed, so that contacting even closer between this two layers, there is the appearance of the bad contact phenomena such as cavity, pinprick between avoiding layer by layer.In conclusion DMSO be added to be completed at the same time in HTM to perovskite quality of forming film and layer by layer between contact the improvement of situation, be effectively improved the photoelectric properties of PSCs.

Description

A kind of high efficiency planar heterojunction perovskite thin film solar cell and preparation method
Technical field
The invention belongs to solar cell device fields, are related to a kind of high efficiency planar heterojunction perovskite thin film solar energy Battery and preparation method, more particularly to it is a kind of to use one-step method to obtain perovskite solar cell (Perovskite at room temperature Solar Cells, PSCs) and preparation method thereof.
Background technology
Energy deficiency and environmental pollution have become an important factor for restricting today's society economic development, with it is a kind of it is clean can The renewable sources of energy-solar energy is the problems such as relying on the solar cell to grow up to be considered as solution energy shortage and environmental pollution Important development direction.However, solar cell at this stage still suffers from, transfer efficiency is low, and production cost height etc. is difficult to apply In the actual production the problems such as.Perovskite solar cell causes crowd due to its remarkable photoelectric properties and lower production cost The extensive concern of more researchers, it is considered to be " rising star " of photovoltaic industry.
The structure of conventional plane hetero-junctions perovskite solar cell is by ITO (FTO) electrode, electron transfer layer, perovskite Light absorbing layer, hole transmission layer and metal electrode composition.However, the knot between the crystalline quality of perovskite thin film and different film layers It closes situation (such as between the light absorbing layer and hole transmission layer) factor relatively independent as two and directly affects the perovskite sun Key parameter open-circuit voltage (the V of energy batteryoc), short-circuit current density (Jsc), fill factor (FF) and energy conversion efficiency (PCE), promotion and the commercialization process of perovskite solar battery efficiency are seriously constrained.Therefore, our necessary exploitations A kind of simple technology of preparing, be completed at the same time to perovskite quality of forming film and layer by layer between contact condition improvement, to obtain Efficient perovskite solar cell.
Invention content
Technical problems to be solved
In order to avoid the shortcomings of the prior art, a kind of high efficiency planar heterojunction perovskite thin film of present invention proposition is too Positive energy battery and preparation method.
Technical solution
A kind of high efficiency planar heterojunction perovskite thin film solar cell, including the electronics being sequentially overlapped from bottom to top pass Indium tin oxide-coated glass below defeated layer 4, calcium titanium ore bed 3, mixed layer 2 and hole transmission layer 1 and electron transfer layer 4, it is empty Au metallic film back electrodes in cave transport layer 1；It is characterized in that：It is formd between calcium titanium ore bed 3 and hole transmission layer 1 mixed Close layer 2；The mixed layer 2 is that partial holes transmission material is permeated in the formation of the surface of calcium titanium ore bed, and thickness is received for 50-60 Rice；The electron transfer layer 4 is TiO2, thickness is 50-70 nanometers, and the hole transmission layer 1 is spiro-OMeTAD, and thickness is 200-300 nanometers；200-350 nanometers of 3 thickness of the calcium titanium ore bed.
A method of preparing the high efficiency planar heterojunction perovskite thin film solar cell, it is characterised in that step It is as follows：
Step 1, processing ito glass：Ito glass after cleaning is in succession each in deionized water, absolute ethyl alcohol and acetone It is dried up from after being ultrasonically treated 10-15min using nitrogen, then UV handles 15-20min；
Step 2, spin coating electron transfer layer：By TiO2Solution is on ito glass with 4000 revs/min of rate spin coating 60 Second, then anneal at 120-150 DEG C 10-15min in air, is cooled to room temperature, and obtains fine and close TiO2Layer；
Step 3, spin coating perovskite light absorbing layer：It will be with fine and close TiO2The ito glass of layer is placed in glove box, by calcium Titanium ore precursor solution drops in TiO2On layer, with 3000 revs/min of rate spin coating 60 seconds, added when spin coating proceeds to 20 seconds Chlorobenzene solution heats 10-15min at 80-100 DEG C after the completion of spin coating, obtains perovskite thin film light absorbing layer；
The perovskite precursor solution refers to：By equimolar than CH3NH3I and PbI2It is 7 to be added to volume ratio:3 The in the mixed solvent of gamma-butyrolacton and DMSO are uniformly mixing to obtain perovskite precursor solution；
Hole transmission layer is made using " DMSO/HTM methods " spin coating in step 4：By the DMSO/ of a concentration of 2.0 μ L/mL HTM mixed solutions drop on perovskite thin film on light absorbing layer, are rotated 40 seconds with 5000 revs/min of rate, quiet in air It sets 8-12 hours, obtains hole transmission layer, partial holes transmission material infiltration at this time forms mixed layer on the surface of calcium titanium ore bed；
The process for preparation of the DMSO/HTM mixed solutions of the 2.0 μ L/mL is：HTM is dissolved using the chlorobenzene of 1mL, so The DMSO solution for adding 2.0 μ L in every milliliter of HTM solution afterwards obtains DMSO/HTM mixed solutions；
The HTM solution process for preparation is：80mg spiro-OMeTAD, 17 μ L are dissolved in every milliliter of chlorobenzene containing double The acetonitrile solution of trifluoromethanesulfonimide lithium and 28.5 μ L 4- tert .-butylpyridines；Wherein contain double trifluoromethanesulfonimide lithiums Acetonitrile solution proportioning to dissolve double trifluoromethanesulfonimide lithiums of 520mg in every milliliter of acetonitrile solution；
Step 5, electrode evaporation：The Au metallic films of one layer of 100nm thickness are deposited on the hole transport layer as back electrode, obtain To planar heterojunction perovskite solar cell.
Spiro-OMeTAD is substituted with P3HT in the step 4 and obtains HTM, the proportioning of the hole transport solution is every milliliter Chlorobenzene solution in dissolving 15mg P3HT.
Spiro-OMeTAD is substituted with PTB7 in the step 4 and obtains HTM, the proportioning of the hole transport solution is every milliliter Chlorobenzene solution in dissolving 10mg PTB7.
Advantageous effect
A kind of high efficiency planar heterojunction perovskite thin film solar cell proposed by the present invention and preparation method, in hole DMSO solution (solvents of dissolving perovskite precursor species) is added in the solution of transport layer, and hole transport is made by spin-coating method Layer.For " the DMSO/HTM methods ", on the one hand, can be mutual by electrostatic since the oxygen atom in DMSO contains lone pair electrons Effect is effectively combined the CH of the exposed non-bonding of perovskite grain boundaries3NH3 +, improve the crystalline quality of perovskite crystal, in turn Improve the light absorpting ability of perovskite thin film；On the other hand, since DMSO can dissolve perovskite thin film, then partial holes transmit Material will permeate forms the mixed layer that one layer of perovskite and hole mobile material interpenetrate on the surface of calcium titanium ore bed so that It contacts even closer between this two layers, there is the appearance of the bad contact phenomena such as cavity, pinprick between avoiding layer by layer.To sum up institute State, DMSO be added to be completed at the same time in HTM to perovskite quality of forming film and layer by layer between contact the improvement of situation, effectively carry The high photoelectric properties of PSCs.
Compared with traditional preparation methods, DMSO is added in HTM solution by " DMSO/HTM methods " provided by the invention, And be directly spin-coated on perovskite thin film, then partial holes transmission material infiltration forms one layer of perovskite on the surface of calcium titanium ore bed The mixed layer interpenetrated with hole mobile material so that the contact between this two layers is even closer, eliminates cavity, pinprick etc. The phenomenon that bad contact.Meanwhile the oxygen atom in DMSO contains lone pair electrons, the non-bonding that it can be exposed with perovskite grain boundaries CH3NH3 +It is combined with strong electrostatic interaction, it is final so that the crystal size of perovskite thin film becomes larger." DMSO/HTM methods " Significantly improve Voc, Jsc, FF and the PCE of perovskite solar cell.Compared with traditional preparation methods, obtained using this method Its electricity conversion of perovskite solar cell arrived is improved from 15.29% to 19.40%.
Description of the drawings
Fig. 1：The perovskite solar battery structure schematic diagram prepared for " DMSO/HTM methods " of the invention.Wherein, 1 generation Table hole transmission layer, using " DMSO/HTM methods ", part hole mobile material permeates surface shape in calcium titanium ore bed afterwards for 2 representatives Perovskite light absorbing layer is represented at the mixed layer that one layer of perovskite and hole mobile material interpenetrate, 3,4 represent electron-transport Layer.
Fig. 2：The process schematic representation of perovskite solar cell prepared by " DMSO/HTM methods "
Fig. 3：(a) and (c) be respectively " pure HTM methods " prepare perovskite solar battery structure sectional view and hole The vertical view of transport layer；(b) it is respectively the sectional view of perovskite solar battery structure prepared by " DMSO/HTM methods " with (d) With the vertical view of hole transmission layer.
Fig. 4：It is the present invention under solar energy spectrum energy AM 1.5G illumination, the J-V characteristics of perovskite solar cell Curve graph.
Specific implementation mode
In conjunction with embodiment, attached drawing, the invention will be further described：
Embodiment one：
1) processing of ito glass：It is first 15mm × 15mm by size, impedance is the ito glass cleanser of 10 Ω/sq Cleaning, the and then 15min at each ultrasound in deionized water, absolute ethyl alcohol and acetone successively, then by ITO glass UV processing 15min；
2) spin coating of electron transfer layer：First by prepared TiO2Solution is on through the processed ito glass of step 1) With 4000 revs/min of spin coatings 60 seconds, then 150 DEG C of annealing 10min in air were slowly cooled to room temperature to get to fine and close TiO2Layer；
3) spin coating of perovskite light absorbing layer：It is put into above-mentioned in glove box through the processed ito glass of step 2).It takes The CH of molar ratio3NH3I and PbI2It is 7 to be added to volume ratio:3 gamma-butyrolacton and the in the mixed solvent of DMSO are sufficiently stirred, i.e., Obtain perovskite precursor solution.Then perovskite precursor solution is dropped in into TiO2On layer, with 3000 revs/min of rate Spin coating 60 seconds adds chlorobenzene solution when spin coating proceeds to 20 seconds, 10min is heated at 100 DEG C, obtains perovskite light absorbing layer；
4) hole transmission layer is made in " DMSO/HTM methods " spin coating：The bis- trifluoromethanesulfonimide lithiums of 520mg are taken first (Li-TFSI) be dissolved in 1mL acetonitrile solutions, take acetonitrile solutions of the 17 μ L containing Li-TFSI, 80 mg spiro-OMeTAD (or 15mg P3HT or 10mg PTB7), 28.5 μ L 4- tert .-butylpyridines (4-tert-butyl pyridine) be codissolved in 1mL chlorobenzenes In, obtain HTM solution.Then DMSO is added to obtained in the HTM solution a concentration of 1.0 μ L/mL DMSO/HTM mixing it is molten Liquid is dropped in through on perovskite thin film made from step 3), being rotated 40 seconds with 5000 revs/min of rate, obtains hole and pass The surface that defeated layer and partial holes transmission material can penetrate into perovskite thin film forms mixed layer.Finally it is stood in air 12 hours；
5) electrode evaporation：The Au metallic films of one layer of 100nm thickness are deposited on the hole transport layer as back electrode, obtain calcium Titanium ore solar cell.
The photoelectric properties test result of the battery is：Voc、Jsc, FF and PCE be respectively 1.07 ± 0.01V, 22.19 ± 0.23mA/cm2、71.75±0.03、17.03±1.06；
Embodiment two：
1) processing of ito glass：It is first 15mm × 15mm by size, impedance is the ito glass cleanser of 10 Ω/sq Cleaning, the and then 15min at each ultrasound in deionized water, absolute ethyl alcohol and acetone successively, then by ITO glass UV processing 15min；
2) spin coating of electron transfer layer：First by prepared TiO2Solution is on through the processed ito glass of step 1) With 4000 revs/min of rate spin coating 60 seconds, then 150 DEG C of annealing 10min in air, are finally slowly cooled to room temperature, i.e., Obtain fine and close TiO2Layer；
3) spin coating of perovskite light absorbing layer：It is put into above-mentioned in glove box through the processed ito glass of step 2).It takes The CH of molar ratio3NH3I and PbI2It is 7 to be added to volume ratio:3 gamma-butyrolacton and the in the mixed solvent of DMSO are sufficiently stirred, i.e., Obtain perovskite precursor solution.Then perovskite precursor solution is dropped in into TiO2On layer, revolved with 3000 revs/min of rate It applies 60 seconds, chlorobenzene solution is added when spin coating proceeds to 20 seconds, 15min is heated at 100 DEG C, obtains perovskite light absorbing layer；
4) hole transmission layer is made in " DMSO/HTM methods " spin coating：The bis- trifluoromethanesulfonimide lithiums of 52 0mg are taken first (Li-TFSI) be dissolved in 1mL acetonitrile solutions, take acetonitrile solutions of the 17 μ L containing Li-TFSI, 80 mg spiro-OMeTAD (or 15mg P3HT or 10mg PTB7), 28.5 μ L 4- tert .-butylpyridines (4-tert-butyl pyridine) be codissolved in 1mL chlorobenzenes In, obtain HTM solution.Then DMSO is added to obtained in the HTM solution a concentration of 1.5 μ L/mL DMSO/HTM mixing it is molten Liquid is dropped in through on perovskite thin film made from step 3), being rotated 40 seconds with 5000 revs/min of rate, obtains hole and pass The surface that defeated layer and partial holes transmission material can penetrate into perovskite thin film forms mixed layer.Finally it is stood in air 12 hours；
5) electrode evaporation：The Au metallic films of one layer of 100nm thickness are deposited on the hole transport layer as back electrode, are put down Face hetero-junctions perovskite solar cell.
The photoelectric properties test result of the battery is：Voc、Jsc, FF and PCE be respectively 1.08 ± 0.02V, 22.62 ± 0.32mA/cm2、72.91±0.04、17.80±0.76；
Embodiment three：
1) processing of ito glass：It is first 15mm × 15mm by size, impedance is the ito glass cleanser of 10 Ω/sq Cleaning, the and then 15min at each ultrasound in deionized water, absolute ethyl alcohol and acetone successively, then by ITO glass UV processing 15min；
2) spin coating of electron transfer layer：First by prepared TiO2Solution is on through the processed ito glass of step 1) With 4000 revs/min of rate spin coating 60 seconds, then 150 DEG C of annealing 10min in air, be slowly cooled to room temperature to get to Fine and close TiO2Layer；
3) spin coating of perovskite light absorbing layer：It is put into above-mentioned in glove box through the processed ito glass of step 2).It takes The CH of molar ratio3NH3I and PbI2It is 7 to be added to volume ratio:3 gamma-butyrolacton and the in the mixed solvent of DMSO are sufficiently stirred, i.e., Obtain perovskite precursor solution.Then perovskite precursor solution is dropped in into TiO2On layer, with 3000 revs/min of rate Spin coating 60 seconds adds chlorobenzene solution when spin coating proceeds to 20 seconds, 10min is heated at 100 DEG C, obtains perovskite light absorbing layer；
4) hole transmission layer is made in " DMSO/HTM methods " spin coating：The bis- trifluoromethanesulfonimide lithiums of 520mg are taken first (Li-TFSI) be dissolved in 1mL acetonitrile solutions, take acetonitrile solutions of the 17 μ L containing Li-TFSI, 80 mg spiro-OMeTAD (or 15mg P3HT or 10mg PTB7), 28.5 μ L 4- tert .-butylpyridines (4-tert-butyl pyridine) be codissolved in 1mL chlorobenzenes In, obtain HTM solution.Then DMSO is added to obtained in the HTM solution a concentration of 2.0 μ L/mL DMSO/HTM mixing it is molten Liquid is dropped in through on perovskite thin film made from step 3), being rotated 40 seconds with 5000 revs/min of rate, obtains hole and pass The surface that defeated layer and partial holes transmission material can penetrate into perovskite thin film forms mixed layer.Finally it is stood in air 12 hours；
5) electrode evaporation：The Au metallic films of one layer of 100nm thickness are deposited on the hole transport layer as back electrode, are put down Face hetero-junctions perovskite solar cell.
From figure 2 it can be seen that based on calcium titanium ore bed good crystallinity prepared by " DMSO/HTM methods ", crystalline size is apparent Become larger and crystal size is uniform, while there are one layer of perovskite and hole mobile materials between light absorbing layer and hole transmission layer The mixed layer interpenetrated so that the contact between this two layers is close, the phenomenon that bad contacts such as gap no longer occurs.
From figure 3, it can be seen that based on perovskite solar cell prepared by " DMSO/HTM methods ", in standard sources (AM 1.5G, 100mW/cm2) irradiation under, the J-V curves of measurement it is found that its with higher photoelectric conversion efficiency.
The photoelectric properties test result of the battery is：Voc、Jsc, FF and PCE be respectively 1.10 ± 0.01V, 23.45 ± 0.34mA/cm2、75.26±0.04、19.40±0.94；
Example IV：
1) processing of ito glass：It is first 15mm × 15mm by size, impedance is the ito glass cleanser of 10 Ω/sq Cleaning, the and then 15min at each ultrasound in deionized water, absolute ethyl alcohol and acetone successively, then by ITO glass UV processing 15min；
2) spin coating of electron transfer layer：First by prepared TiO2Solution is on through the processed ito glass of step 1) With 4000 revs/min of rate spin coating 60 seconds, then 150 DEG C of annealing 10min in air, be slowly cooled to room temperature to get to Fine and close TiO2Layer；
3) spin coating of perovskite light absorbing layer：It is put into above-mentioned in glove box through the processed ito glass of step 2).It takes The CH of molar ratio3NH3I and PbI2It is 7 to be added to volume ratio:3 gamma-butyrolacton and the in the mixed solvent of DMSO are sufficiently stirred, i.e., Obtain perovskite precursor solution.Then perovskite precursor solution is dropped in into TiO2On layer, with 3000 revs/min of rate Spin coating 60 seconds adds chlorobenzene solution when spin coating proceeds to 20 seconds, 10min is heated at 100 DEG C, obtains perovskite light absorbing layer；
4) hole transmission layer is made in " DMSO/HTM methods " spin coating：The bis- trifluoromethanesulfonimide lithiums of 520mg are taken first (Li-TFSI) be dissolved in 1mL acetonitrile solutions, take acetonitrile solutions of the 17 μ L containing Li-TFSI, 80 mg spiro-OMeTAD (or 15mg P3HT or 10mg PTB7), 28.5 μ L 4- tert .-butylpyridines (4-tert-butyl pyridine) be codissolved in 1mL chlorobenzenes In, obtain HTM solution.Then DMSO is added to obtained in the HTM solution a concentration of 2.5 μ L/mL DMSO/HTM mixing it is molten Liquid is dropped in through on perovskite thin film made from step 3), being rotated 40 seconds with 5000 revs/min of rate, obtains hole and pass The surface that defeated layer and partial holes transmission material can penetrate into perovskite thin film forms mixed layer.Finally it is stood in air 12 hours；
5) electrode evaporation：The Au metallic films of one layer of 100nm thickness are deposited on the hole transport layer as back electrode, are put down Face hetero-junctions perovskite solar cell.
The photoelectric properties test result of the battery is：Voc、Jsc, FF and PCE be respectively 1.04 ± 0.02V, 21.07 ± 0.35mA/cm2、64.04±0.04、14.03±0.88；
Comparative example one：Comparative example obtains hole transmission layer, such as Fig. 3 using " pure HTM methods " spin coating compared to the examples,； Concrete operations are as follows,
1) processing of ito glass：It is first 15mm × 15mm by size, impedance is the ito glass cleanser of 10 Ω/sq Cleaning, is and then respectively ultrasonically treated 15min in deionized water, absolute ethyl alcohol and acetone successively, then by ito glass UV processing 15min；
2) spin coating of electron transfer layer：First by prepared TiO2Solution is on through the processed ito glass of step 1) With 4000 revs/min of rate spin coating 60 seconds, then 150 DEG C of annealing 10min in air, be slowly cooled to room temperature to get to Fine and close TiO2Layer；
3) spin coating of perovskite light absorbing layer：It is put into above-mentioned in glove box through the processed ito glass of step 2).It takes The CH of molar ratio3NH3I and PbI2It is 7 to be added to volume ratio:3 gamma-butyrolacton and the in the mixed solvent of DMSO are sufficiently stirred To perovskite precursor solution.Then perovskite precursor solution is dropped in into TiO2On layer, revolved with 3000 revs/min of rate It applies 60 seconds, chlorobenzene solution is added when spin coating proceeds to 20 seconds, 10min is heated at 100 DEG C, obtains perovskite light absorbing layer；
4) hole transmission layer is made in " pure HTM methods " spin coating：The bis- trifluoromethanesulfonimide lithium (Li- of 520mg are taken first TFSI it) is dissolved in 1mL acetonitrile solutions, takes acetonitrile solutions of the 17 μ L containing Li-TFSI, 80mg spiro-OMeTAD (or 15mg P3HT or 10mg PTB7), 28.5 μ L 4- tert .-butylpyridines (4-tert-butyl pyridine) be codissolved in 1 mL chlorobenzenes, Obtain HTM solution.Then it is dropped in through on perovskite thin film made from step 3), rotating 40 with 5000 revs/min of rate Second.Finally, it is stood 12 hours in air；
5) electrode evaporation：On the hole transport layer be deposited one layer of 100nm thickness Au metallic films as back electrode to get to Perovskite solar cell.
The photoelectric properties test result of the battery is：Voc、Jsc, FF and PCE be respectively 1.06 ± 0.02V, 21.48 ± 0.53mA/cm2、67.15±0.03、15.29±0.64。

Claims (4)

1. a kind of high efficiency planar heterojunction perovskite thin film solar cell, including the electron-transport that is sequentially overlapped from bottom to top Layer (4), calcium titanium ore bed (3), the tin indium oxide of mixed layer (2) and hole transmission layer (1) and electron transfer layer (4) below are led Electric glass, the Au metallic film back electrodes on hole transmission layer (1)；It is characterized in that：In calcium titanium ore bed (3) and hole transmission layer (1) mixed layer (2) is formd between；The mixed layer (2) is surface shape of the partial holes transmission material infiltration in calcium titanium ore bed At, thickness is 50-60 nanometers；The electron transfer layer (4) is TiO2, thickness is 50-70 nanometers, the hole transmission layer (1) it is spiro-OMeTAD, thickness is 200-300 nanometers；Thickness 200-350 nanometers of the calcium titanium ore bed (3).
2. a kind of method preparing high efficiency planar heterojunction perovskite thin film solar cell described in claim 1, feature It is that steps are as follows：
Step 1, processing ito glass：Ito glass after cleaning is respectively surpassed in deionized water, absolute ethyl alcohol and acetone in succession It is dried up using nitrogen after sonication 10-15min, then UV handles 15-20min；
Step 2, spin coating electron transfer layer：By TiO2Solution on ito glass with 4000 revs/min of rate spin coating 60 seconds, then Anneal at 120-150 DEG C 10-15min in air, is cooled to room temperature, and obtains fine and close TiO2Layer；
Step 3, spin coating perovskite light absorbing layer：It will be with fine and close TiO2The ito glass of layer is placed in glove box, by perovskite Precursor solution drops in TiO2On layer, with 3000 revs/min of rate spin coating 60 seconds, chlorobenzene is added when spin coating proceeds to 20 seconds Solution heats 10-15min at 80-100 DEG C after the completion of spin coating, obtains perovskite thin film light absorbing layer；
The perovskite precursor solution refers to：By equimolar than CH3NH3I and PbI2It is 7 to be added to volume ratio:3 γ-fourth The in the mixed solvent of lactone and DMSO are uniformly mixing to obtain perovskite precursor solution；
Hole transmission layer is made using " DMSO/HTM methods " spin coating in step 4：The DMSO/HTM of a concentration of 2.0 μ L/mL is mixed Solution drops on perovskite thin film on light absorbing layer, is rotated 40 seconds with 5000 revs/min of rate, it is small to stand 8-12 in air When, hole transmission layer is obtained, partial holes transmission material infiltration at this time forms mixed layer on the surface of calcium titanium ore bed；
The process for preparation of the DMSO/HTM mixed solutions of the 2.0 μ L/mL is：HTM is dissolved using the chlorobenzene of 1mL, then often The DMSO solution that 2.0 μ L are added in the HTM solution of milliliter obtains DMSO/HTM mixed solutions；
The HTM solution process for preparation is：80mg spiro-OMeTAD, 17 μ L are dissolved in every milliliter of chlorobenzene contains double trifluoros The acetonitrile solution of sulfonyl methane imine lithium and 28.5 μ L 4- tert .-butylpyridines；Second wherein containing double trifluoromethanesulfonimide lithiums Nitrile solution ratio is double trifluoromethanesulfonimide lithiums that 520mg is dissolved in every milliliter of acetonitrile solution；
Step 5, electrode evaporation：The Au metallic films of one layer of 100nm thickness are deposited on the hole transport layer as back electrode, are put down Face hetero-junctions perovskite solar cell.
3. according to the method described in claim 2, it is characterized in that：Spiro-OMeTAD is substituted in the step 4 with P3HT to obtain Proportioning to HTM, the hole transport solution is dissolving 15mg P3HT in every milliliter of chlorobenzene solution.
4. according to the method described in claim 2, it is characterized in that：Spiro-OMeTAD is substituted in the step 4 with PTB7 to obtain Proportioning to HTM, the hole transport solution is dissolving 10mg PTB7 in every milliliter of chlorobenzene solution.
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CN113421822A (en) * 2021-06-16 2021-09-21 华能新能源股份有限公司 Transparent conductive electrode and low-temperature preparation method and application thereof
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