CN108315817B - The growing method and device of efficient large size single crystal diamond - Google Patents

The growing method and device of efficient large size single crystal diamond Download PDF

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Publication number
CN108315817B
CN108315817B CN201810353440.3A CN201810353440A CN108315817B CN 108315817 B CN108315817 B CN 108315817B CN 201810353440 A CN201810353440 A CN 201810353440A CN 108315817 B CN108315817 B CN 108315817B
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laser
cavity
dissociation
microwave
spray head
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CN108315817A (en
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刘胜
汪启军
甘志银
曹强
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Wuhan University WHU
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The present invention provides the growing method and device of a kind of efficient large size single crystal diamond.Growing method provided by the present invention includes the following steps: on the chip bench that diamond substrate is placed in microwave cavity；Reaction gas containing carbon source and hydrogen is sent by spray head to laser dissociation is intracavitary is adequately ionized；Apply electric field between chip bench and spray head；Then the gas after ionization is passed through in microwave cavity and carries out microwave plasma CVD, on substrate fast-growth single-crystal diamond.Device includes: vapor deposition portion, includes: microwave cavity, chip bench, and the microwave generator being connected with microwave cavity；Laser dissociation portion includes: the laser dissociation chamber being connected with microwave cavity, and reaction gas is sent into the intracavitary spray head of laser dissociation, laser, and the connecting tube of connection laser dissociation chamber and microwave cavity；And electric field applying unit, it is connected with chip bench and spray head, applies external electric field.

Description

The growing method and device of efficient large size single crystal diamond
Technical field
The invention belongs to diamond film preparation technical fields, and in particular to a kind of growth of efficient large size single crystal diamond Method and the device that single-crystal diamond is grown using this method.
Background technique
Diamond is a kind of semiconductor material with wide forbidden band, band gap width 5.5eV.It has extremely excellent physical Matter, such as high carrier mobility high heat conductance (22Wcm-1·K-1), high breakdown electric field (10MVcm-1), high carrier saturation (electronic carrier saturation rate is 1.5 × 10 to rate7~2.7 × 107cm·s-1, holoe carrier saturation rate be 0.85 × 107~1.2 × 107cm·s-1) and low-k (5.7) etc..Based on these excellent performance parameters, diamond is considered as Prepare next-generation high power, high frequency, high temperature and the most promising material of low-power consumption electronic device.
The preparation method of diamond mainly includes high temperature and pressure (HTHP) method and chemical vapor deposition (CVD) method.High temperature is high The diamond of platen press preparation typically contains certain impurity, influences the quality of diamond, and expensive, technical requirements are severe It carves.Tool grade diamond is mainly prepared at present, is used for tool coating.The diamond of the available high quality of CVD method, without impurity Incorporation, it is substantially colorless transparent.CVD method mainly include HFCVD method, microwave plasma CVD (MPCVD) method, etc. from CVD method, hot cathode plasma CVD method and laser induced plasma CVD method etc. are sprayed in daughter.Wherein HFCVD method, MPCVD Method and plasma jet CVD method are current main technologies of preparing.And MPCVD method can produce due to using electrodeless discharge Pure plasma becomes preparation high-quality Buddha's warrior attendant to avoid polluting as caused by electrode use in other growing methods The prefered method of stone film.
Using MPCVD method grow single-crystal diamond, microwave resonance it is intracavitary by gaseous carbon source and hydrogen under microwave action In the plasma of formation, element species and reaction process are considerably complicated.In plasma atmosphere, at least there is 20 Kind or more a variety of different bonding forms being made of free carbon atom and hydrogen atom substance, and reaction process and Element Species Class is the dynamic process for continuing variation.These elements be all in the form of dynamic Decomposition and synthesis existing for, in addition to deposition growing C atom will form other than stable diamond lattic structure existence form, the unstable existence form of other atoms.At these In substance, growing most closely related several substances with diamond deposition is CH respectively4, atomic hydrogen [H], methyl CH3, and it is living The hydrocarbon group CH* of property.Main chemical equation is as follows inside plasma:
CH3+H→CH*+H2
CH*+H→CH-H
CH-CH3+H→CH-CH2*+H2
CH-CH2*+H→CH-CH*+H2
" a kind of laser assisted crystallization Ge/Si void substrate again disclosed in the Chinese patent of 107785461 A of Publication No. CN Upper direct band gap Ge and preparation method thereof " carries out crystallization again to entire Ge substrate using laser technology, prepares the direct of high quality Band gap Ge material." Irradiation of High carbon nanotube continuously synthesizes disclosed in the Chinese patent of 102409292 A of Publication No. CN Prepare diamond thin method and apparatus " continuous synthesis of the diamond thin under macroscopical normal temperature and pressure is realized, obtain thickness Spend thicker high-purity diamond thin.MPCVD method is used in these technologies, using Mosaic The method of splicing carrys out the single-crystal diamond of growing large-size, there is a problem of that stitching portion meeting lattice dislocation and defect concentration are high, Increase diamond growth rate by nitrogen content in raising gas component but will lead to and introduces Nitrogen Impurities in a diamond.
Summary of the invention
The present invention is to carry out to solve the above-mentioned problems, and it is an object of the present invention to provide a kind of efficient large size single crystal diamond Growing method and device, avoid introducing impurity in the plasma, and make single-crystal diamond fast-growth.
The present invention to achieve the goals above, uses following scheme:
<method>
The present invention provides a kind of growing method of efficient large size single crystal diamond, which comprises the steps of: Diamond substrate is placed on the chip bench in microwave cavity；Reaction gas containing carbon source and hydrogen is sent by spray head Enter that laser dissociation is intracavitary to be adequately ionized；Apply electric field between chip bench and spray head；Then the gas after ionization is passed through Microwave plasma CVD is carried out in microwave cavity, on substrate fast-growth single-crystal diamond.
Preferably, the growing method of efficient large size single crystal diamond according to the present invention can also have such spy Sign: the carbon source in reaction gas is methane CH4, methane CH4Account for 0.5%~2.5% (V/V) of reaction gas total amount.
Preferably, the growing method of efficient large size single crystal diamond according to the present invention can also have such spy Sign: reaction gas is the H of purity 99.999%2With the CH of purity 99.999%4, the volume ratio V (CH of reaction gas4): V (H2) =2%, substrate temperature is controlled at 900~1000 DEG C.
Preferably, the growing method of efficient large size single crystal diamond according to the present invention can also have such spy Sign: the pulsewidth for injecting the intracavitary laser of laser dissociation is 50~100fs.
Preferably, the growing method of efficient large size single crystal diamond according to the present invention can also have such spy Sign: the intensity of the electric field applied between chip bench and spray head is 300~500V/m.
<device>
The present invention also provides a kind of efficient large size single crystal diamond growth devices characterized by comprising vapor deposition Portion includes: for the microwave cavity of diamond epitaxial growth, being arranged in microwave cavity, for placing diamond extension The chip bench of substrate, and the microwave generator being connected with microwave cavity；Laser dissociation portion includes: with microwave cavity phase The laser dissociation chamber of connection will be sent into the intracavitary spray head of laser dissociation containing the reaction gas of carbon source and hydrogen, to laser dissociation Chamber emits the laser of laser, and the connecting tube of connection laser dissociation chamber and microwave cavity；And electric field applying unit, with base Piece platform is connected with spray head, for applying external electric field.
Preferably, efficient large size single crystal diamond growth device according to the present invention can also have such spy Sign: laser dissociation chamber includes: laser dissociation cavity, is mounted on the preceding mirror of laser dissociation cavity bottom, and is mounted on laser dissociation The laser of rear mirror at the top of cavity, laser transmitting enters laser dissociation cavity by preceding mirror, then in rear Jing Chu by completely anti- It is emitted back towards laser dissociation cavity.
Preferably, there can also be such spy in efficient large size single crystal diamond growth device according to the present invention Sign: laser dissociation cavity is F-P resonant cavity, and preceding mirror and rear mirror are circular flat mirror, and diameter is 60~100mm, in connecting tube The central axes for the outlet section being connected with microwave cavity are 25~40mm higher than chip bench upper surface.
Preferably, efficient large size single crystal diamond growth device according to the present invention can also have such spy Sign: the diameter of preceding mirror and rear mirror is 80mm, and the surface of preceding mirror and rear mirror towards laser dissociation cavity is denoted as inner surface, preceding mirror Inner surface be coated with the film for being 85%~100% to central wavelength 1061nm laser reflectivity, the inner surface of rear mirror is coated with centering The axis of the film of the long 1061nm laser reflectivity 100% of cardiac wave, the outlet section being connected in connecting tube with microwave cavity compares substrate The high 30mm in platform upper surface.
Preferably, efficient large size single crystal diamond growth device according to the present invention can also have such spy Sign: the middle part of spray head is equipped with a discharge stomata, the outlet gas flow paths of all ventholes and laser light incident path in the same plane, out The axis direction of stomata and laser light incident direction are at 15 °~60 ° angles, so that dissociation gas not directly enters microwave cavity It is interior, reaction gas is extended in the laser dissociation chamber intracorporal residence time.The axis direction of venthole and laser light incident direction Optimum angle is 45 °.
Preferably, efficient large size single crystal diamond growth device according to the present invention can also have such spy Sign: being 5~10mm, optimum value 5mm at a distance from the front surface parallel with laser to laser center line of spray head.
Preferably, efficient large size single crystal diamond growth device according to the present invention can also have such spy Sign: the intracavitary working frequency for carrying out microwave plasma CVD of microwave resonance is 915MHz, and power is 70~75kW, For the intracavitary vacuum degree of microwave resonance in 0.1Pa or more, underlayer temperature is 800~1200 DEG C.
The action and effect of invention
The growing method and device of efficient large size single crystal diamond of the invention, are placed on single-crystal diamond substrate micro- On the chip bench of wave resonance chamber, make the mixed reaction gas such as methane and hydrogen before entering microwave cavity in laser dissociation chamber It is inside ionized, laser dissociation chamber can make laser in intracavitary formation resonances, and light intensity is improved 10 times or more, can be effective Reduce the power of laser；Gas, which largely absorbs energy and is sufficiently dissociated into after plasma under electric field action, enters microwave resonance Intracavitary to be grown, under the action of microwave energy, unionized gas molecule is ionized again, so that hydrocarbon active group Concentration increases, to realize the purpose for accelerating single-crystal diamond fast-growth, and can be used to growing large-size single crystal diamond Stone, the single-crystal diamond size prepared can reach 300mm, and the speed of growth is about 30~42 μm/h.
To sum up, compared with prior art, the invention has the following advantages:
1. the intracavitary light intensity of laser dissociation is stronger, energy density is bigger, and gas residence time extends, so that gas is easier Ionization, hydrocarbon active group density increase, and single crystal diamond film rate is faster.
2. will not introduce new impurity in gas using laser dissociation, defect is lower during single crystal diamond film.
3. laser dissociation chamber capacity usage ratio is higher, the energy of required laser is smaller, more energy efficient.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of efficient large size single crystal diamond growth device in embodiment one；
Fig. 2 is the structural schematic diagram of spray head in embodiment one；
Fig. 3 is the side view of spray head in embodiment one.
Specific embodiment
The growing method to efficient large size single crystal diamond according to the present invention and device are made detailed referring to the drawings It is thin to illustrate.
<embodiment one>
As shown in Figure 1, efficiently large size single crystal diamond growth device 10 includes vapor deposition portion 20, laser dissociation portion 30, electric field applying unit (not shown) and gas supply part 40.
Vapor deposition portion 20 is MPCVD equipment, it includes microwave cavity 21, chip bench 22 and microwave generator 23.
Microwave cavity 21 is used for diamond epitaxial growth, and in the present embodiment, the internal diameter of microwave cavity 21 is 360mm. 21 side lower of microwave cavity is equipped with exhaust outlet 21a, and exhaust outlet 21a is connect by bellows 21b with vacuum pump 21c；To It is passed through before gas, can be controlled cavity pressure in 0.1Pa or higher by vacuum pump 21c in microwave cavity 21；Microwave Resonant cavity is equipped with thermocouple sensor 21d on 21 side.
Chip bench 22 is erected in microwave cavity 21, and upper surface is for placing diamond epitaxial substrate A.When work, lining It will form plasma sphere B above the A of bottom.
Microwave generator 23 includes Mode-transducing antenna 23a, waveguide 23b and microwave source 23c；Mode-transducing antenna 23a is arranged above microwave cavity 21, and lower end connects microwave cavity 21；The front-end and back-end of waveguide 23b respectively with mould Formula converting antenna 23a is connected with microwave source 23c.
Laser dissociation portion 30 includes laser dissociation chamber 31, spray head 32, laser 33 and connecting tube 34.
Laser dissociation chamber 31 is connected with microwave cavity 21, it includes laser dissociation cavity 31a, preceding mirror 31b, He Houjing 31c。
In the present embodiment, laser dissociation cavity 31a is F-P resonant cavity.
Preceding mirror 31b is mounted on the bottom of laser dissociation cavity 31a, and rear mirror 31c is mounted on the top of laser dissociation cavity 31a Portion, preceding mirror 31b and rear mirror 31c are circular flat mirror, and between the two away from being adjusted, diameter is 60~100mm, and optimal value is 80mm.The surface of preceding mirror 31b and rear mirror 31c towards laser dissociation cavity 31a are denoted as inner surface, the inner surface plating of preceding mirror 31b There is the film for being 85%~100% to central wavelength 1061nm laser reflectivity, the inner surface of rear mirror 31c is coated with to central wavelength The film of 1061nm laser reflectivity 100%.
Spray head 32 is arranged in laser dissociation chamber 31, and entrance is connected with gas supply part 40, by containing from gas supply part 40 The reaction gas of carbon source and hydrogen sprays.In the present embodiment, as shown in Figures 2 and 3, the middle part of spray head 32 is equipped with a row and goes out for totally five Stomata 32a, the outlet gas flow path F1 and laser light incident path F2 of these ventholes 32a as shown in Figure 3 in the same plane, and go out The axis direction (direction shown in F1) of stomata 32a and laser light incident direction (direction shown in F2) are at 15 °~60 ° angles, optimal folder Angle is 45 °, and the distance D of upper surface 32b to the laser center line of spray head 32 is 5~10mm, optimal value 5mm.
As shown in Figure 1, laser 33 is used to emit laser to laser dissociation chamber 31.Before the laser that laser 33 emits passes through Mirror 31b injects laser dissociation cavity 31a, is then completely reflected back laser dissociation cavity 31a in rear Jing31cChu.The present embodiment In, for the laser 33 used for titanium sapphire tunable pulsed laser device 33, wave-length coverage is 1000~1200nm, and optimum value is 1061nm；Pulsewidth is 50~100fs, optimum value 80fs, spot diameter 1mm.
Connecting tube 34 is for being connected to laser dissociation chamber 31 and microwave cavity 21.The central axes of connecting tube 34 are than chip bench 22 High 25~the 40mm in upper surface, optimum value 30mm.In the present embodiment, the middle part of connecting tube 34 is fixedly connected with ring flange 34a, from And be linked together laser dissociation chamber 31 and microwave cavity 21, the gas of laser dissociation is directly acted in electric field acceleration It is lower to enter in microwave cavity 21.
Electric field applying unit is connected with chip bench 22 and spray head 32, for applying external electric field.In the present embodiment, electric field applying unit Comprising the anode connection terminal being connected with chip bench 22, and the cathode connecting pin being connected with spray head 32.In use, by anode connection terminal It is connected with positive pole, cathode connecting pin is connected with power cathode, dispatch from foreign news agency can be applied between chip bench 22 and spray head 32 , in the present embodiment, the intensity of the external electric field of application is 300~500V/m, optimal value 400V/m.
Gas supply part 40 includes air supply pipe 41, multiple gas source tanks 42 and multiple mass flowmenters 43.
The air supply opening of air supply pipe 41 is connected with the entrance of spray head 32.All gas source tanks 42 with the collection port of air supply pipe 41 It is connected.Mass flowmenter 43 is corresponded with 42 phase of gas source tank, and each mass flowmenter 43 is all disposed within a gas source tank 42 On, for monitoring throughput.In the present embodiment, the hydrogen H for being 99.999% equipped with purity in a gas source tank 422, another The methane CH for being 99.999% equipped with purity in gas source tank 424。
Based on above structure, in the efficient large size single crystal diamond growth device 10 provided by the present embodiment, growth The methane and hydrogen of diamond are sent into laser dissociation cavity 31a by spray head 32, and laser dissociation cavity 31a makes laser intracavitary humorous Endovenous laser intensity is improved 10 times or more by vibration, and excitation forms plasma after gas fully absorbs energy under laser action, Plasma is accelerated into microwave cavity 21, entrance is micro- under the DC Electric Field that electric field applying unit provides After wave resonance chamber 21, do not ionized further in microwave cavity 21 by microwave energy by the gas of laser dissociation, improve carbon and The density of hydrocarbon active group accelerates the growth rate of diamond.The present apparatus is avoided in dissociation process using laser dissociation The introducing of impurity effectively reduces the internal flaw of single-crystal diamond.
<embodiment two>
Single-crystal diamond is grown using the method that laser dissociation chamber 31 is combined with microwave plasma CVD, Before deposition, seeded growth face is polished first, supersound washing in pickling and deionized water, and with being put in after hot blast drying On chip bench 22.Intracavitary air pressure is evacuated to 0.1Pa using vacuum pump 21c, is passed through the H of 100sccm2To entire microwave cavity 21 Inside replaced.Microwave generator 23 is opened, microwave power and air pressure are separately positioned on 8kW and 18kPa, depositing temperature control After 980 DEG C, stabilization to be achieved, opens gas supply part 40 and be passed through reaction gas, CH in reaction gas4: H2=1.5% (V/V), gas Body total flow is controlled in 400sccm.Laser 33 is opened, selects central wavelength for the femtosecond laser of 1061nm, pulsewidth 80fs swashs Light incidence peak power 2 × 1012W/cm2.Rear mirror 31c on laser dissociation chamber 31 is 100% to incident light reflectivity, and electric field is applied The external electronic field for adding portion to provide is 400V/m, after sedimentation time 20h, closes laser 33, microwave generator 23, electric field and applies Portion and gas supply part 40 further take out sample, and the growth rate that single-crystal diamond is obtained after measurement is 35 μm/h.
<embodiment three>
Single-crystal diamond is grown using the method that laser dissociation chamber 31 is combined with microwave plasma CVD, Before deposition, seeded growth face is polished first, supersound washing in pickling and deionized water, and with being put in after hot blast drying On chip bench 22.Intracavitary air pressure is evacuated to 0.1Pa using vacuum pump 21c, is passed through the H of 100sccm2To entire microwave cavity 21 Inside replaced.Microwave generator 23 is opened, microwave power and air pressure are separately positioned on 8kW and 18kPa, depositing temperature control After 980 DEG C, stabilization to be achieved, opens gas supply part 40 and be passed through reaction gas, CH in reaction gas4: H2=2% (V/V), gas Total flow is controlled in 400sccm.Laser 33 is opened, laser selects central wavelength for the femtosecond laser of 1061nm, pulsewidth 80fs, laser light incident peak power 3 × 1012W/cm2.Rear mirror on laser dissociation chamber 31 is 100% to incident light reflectivity, electricity The external electronic field that applying unit provides is 400V/m, after sedimentation time 20h, closes laser 33, microwave generator 23, electric field Applying unit and gas supply part 40 further take out sample, and it is 42 μm/h that single crystal diamond film rate is obtained after measurement.
Above embodiments are only the illustration done to technical solution of the present invention.Efficiently big ruler according to the present invention The growing method and device of very little single-crystal diamond are not merely defined in described structure in the embodiment above, but with power Benefit requires subject to limited range.Any modification that those skilled in the art of the invention are made on the basis of the embodiment Supplement or equivalence replacement, all in claim range claimed of the invention.

Claims (7)

1. a kind of efficient large size single crystal diamond growth method, which comprises the steps of:
Diamond substrate is placed on the chip bench in microwave cavity；Reaction gas containing carbon source and hydrogen is passed through into spray Head is sent into that laser dissociation is intracavitary is adequately ionized；Apply electric field between the chip bench and the spray head；It then will ionization Gas afterwards, which is passed through in the microwave cavity, carries out microwave plasma CVD, on substrate fast-growth monocrystalline Diamond,
Wherein, the carbon source in the reaction gas is methane CH4, methane CH4Account for the reaction gas total amount 0.5%~ 2.5% (V/V),
The reaction gas is the H of purity 99.999%2With the CH of purity 99.999%4,
The substrate temperature is controlled at 900~1000 DEG C,
The pulsewidth for injecting the intracavitary laser of the laser dissociation is 50~100fs,
The intensity of the electric field applied between the chip bench and the spray head is 300~500V/m.
2. efficient large size single crystal diamond growth method according to claim 1, it is characterised in that:
Wherein, the volume ratio V (CH of reaction gas4): V (H2)=2%.
3. a kind of efficient large size single crystal diamond growth device characterized by comprising
Vapor deposition portion includes: for the microwave cavity of diamond epitaxial growth, being arranged in the microwave cavity, uses In the chip bench for placing diamond epitaxial substrate, and the microwave generator being connected with the microwave cavity；
Laser dissociation portion includes: the laser dissociation chamber being connected with the microwave cavity, by the reaction containing carbon source and hydrogen Gas is sent into the intracavitary spray head of laser dissociation, and Xiang Suoshu laser dissociation chamber emits the laser of laser, and the connection laser Dissociate the connecting tube of chamber and the microwave cavity；And
Electric field applying unit is connected, for applying external electric field with the chip bench and the spray head.
4. efficient large size single crystal diamond growth device according to claim 3, it is characterised in that:
Wherein, the laser dissociation chamber includes: laser dissociation cavity, is mounted on the preceding mirror of the laser dissociation cavity bottom, and The rear mirror being mounted at the top of laser dissociation cavity,
The laser of the laser transmitting enters laser dissociation cavity by the preceding mirror, is then completely reflected back in rear Jing Chu Laser dissociation cavity.
5. efficient large size single crystal diamond growth device according to claim 3, it is characterised in that:
Wherein, the laser dissociation cavity is F-P resonant cavity, and the preceding mirror and the rear mirror are circular flat mirror, and diameter is 60~100mm,
The central axes for the outlet section being connected in the connecting tube with the microwave cavity are higher by 25 than the chip bench upper surface~ 40mm。
6. efficient large size single crystal diamond growth device according to claim 5, it is characterised in that:
Wherein, the preceding mirror and it is described after the diameter of mirror be 80mm, will the preceding mirror and the mirror afterwards towards the laser solution Surface from cavity is denoted as inner surface, the inner surface of the preceding mirror be coated with to central wavelength 1061nm laser reflectivity be 85%~ The inner surface of 100% film, the rear mirror is coated with the film to central wavelength 1061nm laser reflectivity 100%,
The axis for the outlet section being connected in the connecting tube with the microwave cavity is 30mm higher than the chip bench upper surface.
7. efficient large size single crystal diamond growth device according to claim 5, it is characterised in that:
Wherein, the middle part of the spray head is equipped with a discharge stomata, the outlet gas flow path and the laser light incident of all ventholes Path in the same plane, the axis direction of the venthole and laser light incident direction at 15 °~60 ° angles,
It is 5~10mm at a distance from the front surface parallel with the laser of the spray head to the laser center line.
CN201810353440.3A 2018-04-19 2018-04-19 The growing method and device of efficient large size single crystal diamond Active CN108315817B (en)

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CN111321462A (en) * 2019-12-12 2020-06-23 上海征世科技有限公司 Substrate table for growing single crystal diamond by microwave plasma technology
CN111020699A (en) * 2019-12-12 2020-04-17 上海征世科技有限公司 Substrate table for improving growth speed of microwave plasma growth single crystal diamond
CN111519248A (en) * 2020-03-31 2020-08-11 上海征世科技有限公司 Substrate table for growing single crystal diamond by microwave plasma technology and growing method
CN113088937B (en) * 2021-03-01 2023-04-28 杭州超然金刚石有限公司 Device for preparing monocrystalline diamond by microwave plasma CVD (chemical vapor deposition) with improved stability and monocrystalline diamond preparation method

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