CN108315705A - A kind of structure and preparation method thereof improving the anti-crystallization ability of amorphous metal thin-film material - Google Patents
A kind of structure and preparation method thereof improving the anti-crystallization ability of amorphous metal thin-film material Download PDFInfo
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- CN108315705A CN108315705A CN201810327894.3A CN201810327894A CN108315705A CN 108315705 A CN108315705 A CN 108315705A CN 201810327894 A CN201810327894 A CN 201810327894A CN 108315705 A CN108315705 A CN 108315705A
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- 239000000463 material Substances 0.000 title claims abstract description 48
- 239000005300 metallic glass Substances 0.000 title claims abstract description 46
- 238000002425 crystallisation Methods 0.000 title claims abstract description 40
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 47
- 239000010408 film Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 6
- 229910005805 NiNb Inorganic materials 0.000 claims description 35
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 27
- 229910052721 tungsten Inorganic materials 0.000 claims description 27
- 239000010937 tungsten Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- FEBJSGQWYJIENF-UHFFFAOYSA-N nickel niobium Chemical compound [Ni].[Nb] FEBJSGQWYJIENF-UHFFFAOYSA-N 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000004062 sedimentation Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- 230000008025 crystallization Effects 0.000 abstract description 19
- 239000002178 crystalline material Substances 0.000 abstract description 15
- 239000012528 membrane Substances 0.000 abstract description 9
- 238000001994 activation Methods 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 238000012546 transfer Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 43
- 238000004458 analytical method Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GAYPVYLCOOFYAP-UHFFFAOYSA-N [Nb].[W] Chemical compound [Nb].[W] GAYPVYLCOOFYAP-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003471 mutagenic agent Substances 0.000 description 1
- 231100000707 mutagenic chemical Toxicity 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
Abstract
The invention discloses a kind of structure and preparation method thereof improving the anti-crystallization ability of amorphous metal thin-film material, the structure includes amorphous metal film, and the lower surface and upper surface of amorphous metal film are all covered with crystal layer, form sandwich layer structure.The crystallization process of non-crystalline material be atom rearrange, the process of atomic ordering, the process category thermo-activation process.In thin-film material, the high several times of diffusion coefficient and jump frequency ratio material internal of surface atom, therefore it can effectively make the atom for being located at surface originally that the property similar with interior atoms be presented in cover surface, to hinder the energy transfer process of non-crystalline material and external environment, the speed of non-crystalline material crystallization and unstability is reduced.For structure of the invention relative to single noncrystal membrane congruent in control group, anti-crystallization ability is stronger.The method of the present invention uses conventional magnetron sputtering means, and at low cost, controllability is strong, easy to operate, it is easy to accomplish and promote.
Description
Technical field
The invention belongs to technical field of material, more particularly to a kind of anti-crystallization ability of raising amorphous metal thin-film material
Structure and preparation method thereof.
Background technology
Non-crystalline material causes the extensive attention of people as a kind of new structural material in recent years.Since it is in atom ruler
Longrange disorder on degree and the lattice defect for lacking similar crystal Dislocations, non-crystalline material have some unique properties：Such as
The hardness etc. of high elastic strain limit, good resistance to corrosion and superelevation.Nearly ten years, the mechanical property of non-crystalline material becomes
The hot spot of research：Generally believe the mechanical behavior of non-crystalline material by shear band, shear deformation zone (STZ), free volume or office
Domain plastic deformation influences.
Material often has close with its microstructure and directly contacts, amorphous material in the performance macroscopically embodied
Expect no exception.The excellent mechanical property of amorphous is attributable to its disorderly arranged atomic structure, if it is non-to be converted into crystal structure
Crystalline substance will lose ground, therefore the stability of amorphous seems and is even more important.The mechanical property of non-crystaline amorphous metal is thought in current research
It is influenced (either block state amorphous or noncrystal membrane are likely to that crystallization occurs when heated) by its structural stability.And
And non-crystalline material thermodynamically belongs to metastable state, has the possibility of crystallization after annealing, being handled under power mutagens shape or high pressure may also
Lead to the embrittlement and failure of non-crystalline material.Therefore, it is most important to improve structural stability of the non-crystalline material under thermotropic environment.
Invention content
The purpose of the present invention is to provide a kind of structure improving the anti-crystallization ability of amorphous metal thin-film material and its preparations
Method, to solve the above technical problems.The upper and lower surface of amorphous layer is presented by crystalline substance in amorphous metal thin-film material prepared by the present invention
The structure of body layer covering.Membrane structure prepared by the technique is fine and close, and crystal amorphous interfacial layer is clear.Party's legal system can be passed through
The standby anti-crystallization ability noncrystal membrane structure strong compared with strong, stability.Meanwhile the process employs conventional magnetron sputtering method, at
This is low, and controllability is strong, easy to operate, it is easy to accomplish and promote.
To achieve the goals above, the present invention adopts the following technical scheme that：
A kind of structure improving the anti-crystallization ability of amorphous metal thin-film material, including amorphous metal film, amorphous metal are thin
The lower surface and upper surface of film are all covered with crystal layer, form sandwich layer structure.
Further, crystal layer is the metal material different from the element of amorphous metal film.
Further, crystal layer material is different from the difference of thermal expansion coefficients of amorphous metal film.
Further, crystal layer material is tungsten or silver, and amorphous metal film material is nickel niobium.
Further, amorphous metal film and its crystal layer of lower surface and upper surface covering are all made of magnetically controlled sputter method
It prepares.
Further, crystal layer material is tungsten, and amorphous metal film material is nickel niobium, forms W/NiNb/W sandwich stratiforms
Structure；The thickness of NiNb amorphous metal films is 600nm, and the thickness of two layers of tungsten crystal layer is 60nm.
A kind of preparation method for the structure improving the anti-crystallization ability of amorphous metal thin-film material, includes the following steps：
1) substrate cleaning is clean, it is put on superhigh vacuum magnetron sputtering equipment chip bench；The metallic target that needs are sputtered
Material is placed in target base；
2) preparation of crystal layer uses successive sedimentation plated film mode；Halt device after crystal layer is obtained, until film is complete
It is cooling, then carry out the preparation of amorphous metal film；
3) preparation of amorphous metal film uses intermittent deposition method, often deposits 15~30 minutes, 5~10 points of pause sputtering
Clock waits for film cooling, then carries out the preparation of next amorphous metal film, deposition rate 5-6nm/s；Until amorphous layer thickness
Reach predetermined value, then amorphous metal film preparation finishes；
4) crystal layer is prepared with same method in step 2) again after film cooling completely；Finally obtain sandwich stratiform knot
Structure.
Compared with the existing technology, the invention has the advantages that：
Amorphous Films are smaller in cross-sectional direction size, and structure can refer to the two-dimensional material under nanoscale.When
When the scale of material is reduced to nanometer or even smaller, subtleer dimension, specific surface area will increase rapidly.At this moment material table
The property in face will play the role of the performance of material entirety larger, and present invention utilizes the surfaces of thin-film material, to non-crystalline material
Crystallization behavior intervened.
The method applied in the present invention, cardinal principle are：The crystallization process of non-crystalline material is that atom rearranges, atom has
The process of sequence, the process category thermo-activation process.In thin-film material, the diffusion coefficient and jump frequency of surface atom compare material
Internal high several times, therefore can effectively make the atom presentation for being located at surface originally similar with interior atoms in cover surface
Property reduces the speed of non-crystalline material crystallization and unstability to hinder the energy transfer process of non-crystalline material and external environment.
Crystal prepared by the present invention covers non crystalline structure, compared with noncrystal membrane prepared by conventional method, has higher anti-
Crystallization ability.
Description of the drawings
Fig. 1 is the NiNb non crystalline structure schematic diagrames for covering tungsten crystal layer prepared by the present invention, i.e., " sandwich " mentioned above
Layer structure；
Fig. 2 is NiNb amorphous annealed state and covers the NiNb amorphous annealed state XRD structural analyses of tungsten crystal layer；
Fig. 3 is that NiNb amorphous annealed state high-resolution transmits selective electron diffraction atlas analysis view in photo；
Fig. 4 is the high-resolution transmission image of NiNb amorphous annealed states；
Fig. 5 is the NiNb amorphous annealed states interface TEM figures and its high-resolution transmission map analysis view for covering tungsten crystal layer.
Specific implementation mode
A kind of structure improving the anti-crystallization ability of amorphous metal thin-film material of the present invention, including amorphous metal film, amorphous
The lower surface and upper surface of metallic film are all covered with crystal layer, form sandwich layer structure.The method of the present invention utilizes magnetic control
Sputtering technology prepares crystal covering amorphous metal thin-film material, to carry in combination with successive sedimentation and intermittent deposition coating technique
The high anti-crystallization ability of amorphous metal thin-film material.The present embodiment, as sputtering target material, prepares tungsten/nickel using common tungsten
Niobium/W film material.It should be noted that according to preparation method of the present invention, crystal layer metal can be swollen according to heat
Swollen coefficient uses other materials；It is not limited to tungsten.In order to illustrate the difference of this method and conventional magnetron sputtering technology, provide such
The preparation process feature of metallic film material.
1, the specific embodiment of tungsten/nickel niobium amorphous/tungsten (W/NiNb/W) thin-film material (three layers)：
1) monocrystal silicon substrate of single-sided polishing is cut into required size with diamond tool, silicon base is immersed in acetone and is surpassed
Sound cleans 15 minutes, is dried with hair-dryer；It is cleaned 15 minutes with EtOH Sonicate again, superhigh vacuum magnetron sputtering is placed in after drying
On equipment base platform.
2) metal W target and NiNb amorphous targets are separately mounted on target position, close sputtering cabin, vacuumizes.
3) when in equipment cavity vacuum degree reach 10-7When mbar magnitudes, argon gas bottle valve can be opened.Adjusting argon flow amount is
3.0sccm opens simultaneously direct current pulse power source and radio-frequency power supply, and pre- splash is carried out at the same time to non-crystaline amorphous metal target and metal tungsten target material
It penetrates, duration 15 minutes.The purpose of the step is to remove target material surface oxide layer that may be present and pollutant etc., it is ensured that is coated with
The purity of thin film composition.
4) after pre-sputtering, substrate position base is adjusted, prepares plated film.Direct current pulse power source is opened, sputtering work(is adjusted
Rate is 100W, is sputtered.
5) technological parameter of crystal tungsten layer：DC pulse source power：100W；Additional substrate platform rotates；Without substrate bias；
Depositing temperature：Room temperature.Under this parameter, deposit 5-10 minutes, until reach required film thickness, crystalline tungsten thickness in the present embodiment
Degree is 60 nanometers.
6) deposition process parameters of NiNb amorphous layers：DC pulse source power：100W；Additional substrate platform rotates；Without base
Piece bias；Depositing temperature：Room temperature.Under this parameter, successive sedimentation 30 minutes closes power supply pause plated film 10 minutes, until it is heavy
After the cooling completely of product film, deposit 30 minutes again.Such cycle reaches the thickness preset value of needs up to amorphous layer thickness,
Amorphous layer thickness is 600 nanometers in the present embodiment.
7) after waiting for that amorphous layer is coated with and finishes and be fully cooled, crystalline tungsten layer is covered on amorphous layer, i.e. repeatedly step 5),
Thickness is still 60 nanometers, as 1/10th of amorphous layer thickness.
2, this example sets a control group, and the anti-crystallization ability for comparing material is strong and weak：Nickel niobium (NiNb) Amorphous Films
The specific embodiment of (single layer)：
Only carry out 1 in above 1, example in processing step) 2) 3) 4) 6) item.
High vacuum annealing is carried out at the same time to two non-crystalline materials that above method obtains.Heat treatment process parameter：It moves back
Vacuum degree when fiery：Less than 5 × 10-4Pa；Annealing temperature：873K；Annealing time：One hour；Furnace cooling 12 hours after the completion of heat treatment
Can be taken off up to room temperature rear.
The present invention is described in further details below in conjunction with the accompanying drawings：
Fig. 2 is NiNb amorphous annealed state and covers the NiNb amorphous annealed state XRD structural analyses of tungsten crystal layer；By result in figure
It can be found that：There is apparent crystal peak in annealed state NiNb amorphous；And in the NiNb amorphous for covering tungsten crystal layer annealed state only
Observe the crystal peak of tungsten.It is possible thereby to qualitatively judge that the covering of tungsten crystal layer has inhibiting effect to Amorphous Crystallization.
Fig. 3 is that the high-resolution transmission microscopy selected diffraction of annealed state NiNb noncrystal membranes is analyzed, the results showed that, NiNb is non-
Brilliant crystallization generates nanometer crystalline phase.By demarcating the interplanar distance of selective electron diffraction in photo, the reality of first row in table 1 is obtained
Test value.
Table 1 is the NiNb Crystallization Phases interplanar distance comparison charts of annealed state, can be confirmed after being compared with standard interplanar distance,
The nanometer crystalline phase generated after NiNb noncrystal membrane crystallization is Nb7Ni6, i.e., table 1 the 4th arrange.
Fig. 4 is that the high-resolution of NiNb amorphous annealed states transmits map analysis, from figure in NiNb amorphous annealing process
Crystallization situation, it is possible to find：NiNb noncrystal membranes show heterogeneous crystallization behavior, i.e., crystallization occurs near surface, can obviously see
Observe crystal grain；The amorphous structural state that atomic disorder arranges still is kept close to silicon substrate bottom.The result of this gradient crystallization behavior is said
Bright Amorphous Crystallization starts from surface.
Fig. 5 is NiNb amorphous annealed states interface TEM figures and its high-resolution transmission map analysis for covering tungsten crystal layer, can from figure
It is clear with the crystal layer and amorphous bed boundary of observing film.Its microscopic appearance is further looked at as it can be seen that covering tungsten crystal layer
NiNb amorphous microscopic appearances are rendered as：Disperse is inlaid with a large amount of nanocrystalline forming core in amorphous substrate, and crystallization situation is relatively light (relatively to be schemed
3).It can be seen that covering the NiNb amorphous of tungsten crystal layer, anti-crystallization ability is stronger.
Pass through the average grain size and number of die to NiNb amorphous (Fig. 4) and the NiNb amorphous (Fig. 5) for covering tungsten crystal layer
Amount carries out quantitative statistics, obtains the data in table 2.About 32 nanometers of NiNb amorphous annealed states average grain size, and cover tungsten crystal
The NiNb amorphous annealed state average grain sizes of layer only have 6 nanometers.Illustrate the knot of crystal covering noncrystal membrane prepared by the present invention
Structure can reach the effect for improving the anti-crystallization ability of amorphous metal thin-film material.
The interplanar distance deck watch of 1 NiNb Crystallization Phases of table
2 NiNb amorphous of table and the NiNb amorphous for covering tungsten crystal layer, the crystallite dimension and crystal grain quantity statistical form of the two
Claims (7)
1. a kind of structure improving the anti-crystallization ability of amorphous metal thin-film material, which is characterized in that non-including amorphous metal film
The lower surface and upper surface of brilliant metallic film are all covered with crystal layer, form sandwich layer structure.
2. a kind of structure improving the anti-crystallization ability of amorphous metal thin-film material according to claim 1, which is characterized in that
Crystal layer is the metal material different from the element of amorphous metal film.
3. a kind of structure improving the anti-crystallization ability of amorphous metal thin-film material according to claim 1, which is characterized in that
Crystal layer material is different from the coefficient of thermal expansion of amorphous metal film.
4. a kind of structure improving the anti-crystallization ability of amorphous metal thin-film material according to claim 1, which is characterized in that
Crystal layer material is tungsten or silver, and amorphous metal film material is nickel niobium.
5. a kind of structure improving the anti-crystallization ability of amorphous metal thin-film material according to claim 1, which is characterized in that
Amorphous metal film and its crystal layer of lower surface and upper surface covering are all made of magnetically controlled sputter method preparation.
6. a kind of structure improving the anti-crystallization ability of amorphous metal thin-film material according to claim 1, which is characterized in that
Crystal layer material is tungsten, and amorphous metal film material is nickel niobium, forms W/NiNb/W sandwich layer structures；NiNb amorphous metals
The thickness of film is 600nm, and the thickness of two layers of tungsten crystal layer is 60nm.
7. a kind of structure improving the anti-crystallization ability of amorphous metal thin-film material according to any one of claim 1 to 6
Preparation method, which is characterized in that include the following steps：
1) substrate cleaning is clean, it is put on superhigh vacuum magnetron sputtering equipment chip bench；The metal targets sputtered will be needed to set
In in target base；
2) preparation of crystal layer uses successive sedimentation plated film mode；Halt device after crystal layer is obtained, until film is completely cooling,
The preparation of amorphous metal film is carried out again；
3) preparation of amorphous metal film uses intermittent deposition method, often deposits 15~30 minutes, pause sputtering 5~10 minutes,
Film cooling is waited for, then carries out the preparation of next amorphous metal film, deposition rate 5-6nm/s；Until amorphous layer thickness reaches
To predetermined value, then amorphous metal film preparation finishes；
4) crystal layer is prepared with same method in step 2) again after film cooling completely；Finally obtain sandwich layer structure.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109468590A (en) * | 2018-12-23 | 2019-03-15 | 深圳市千禾盛科技有限公司 | A kind of laminated film |
| CN110707340A (en) * | 2019-09-27 | 2020-01-17 | 佛山科学技术学院 | Composite multilayer corrosion-resistant film and application thereof |
| CN110724921A (en) * | 2019-10-12 | 2020-01-24 | 华中科技大学 | Intermittent magnetron sputtering method for improving disorder of amorphous material |
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| CN102925869A (en) * | 2012-10-26 | 2013-02-13 | 西安交通大学 | Method for preparing amorphous/nanometer crystal multilayer-structure film |
| CN102912295A (en) * | 2012-11-06 | 2013-02-06 | 浙江大学 | High-elasticity metal film material |
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| CN109468590A (en) * | 2018-12-23 | 2019-03-15 | 深圳市千禾盛科技有限公司 | A kind of laminated film |
| CN110707340A (en) * | 2019-09-27 | 2020-01-17 | 佛山科学技术学院 | Composite multilayer corrosion-resistant film and application thereof |
| CN110707340B (en) * | 2019-09-27 | 2022-07-15 | 佛山科学技术学院 | Composite multilayer corrosion-resistant film and application thereof |
| CN110724921A (en) * | 2019-10-12 | 2020-01-24 | 华中科技大学 | Intermittent magnetron sputtering method for improving disorder of amorphous material |
| CN110724921B (en) * | 2019-10-12 | 2021-04-06 | 华中科技大学 | Intermittent magnetron sputtering method for improving disorder of amorphous material |
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