CN108306502B - Charge pump circuit and electronic device using same - Google Patents
Charge pump circuit and electronic device using same Download PDFInfo
- Publication number
- CN108306502B CN108306502B CN201810124850.0A CN201810124850A CN108306502B CN 108306502 B CN108306502 B CN 108306502B CN 201810124850 A CN201810124850 A CN 201810124850A CN 108306502 B CN108306502 B CN 108306502B
- Authority
- CN
- China
- Prior art keywords
- switching
- energy storage
- storage unit
- circuit
- switching device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
Abstract
The embodiment of the application provides a charge pump circuit and an electronic device using the same, wherein the charge pump circuit comprises a first branch circuit, a first energy storage unit and a detection unit, the first branch circuit comprises a plurality of first switching devices, the first branch circuit is used for enabling the first energy storage unit to be in a charged state through the switching action coordination of the first switching devices, the detection unit is used for detecting an electric signal of a detection end in the first energy storage unit so as to at least change the switching action coordination of the first switching devices, and therefore the voltage difference between the detection ends in the first energy storage unit meets a preset electric signal threshold value, and therefore the output level of the charge pump circuit can be higher than the driving signal of power supply voltage.
Description
Technical Field
The embodiment of the application relates to the technical field of circuits, in particular to a charge pump circuit and an electronic device using the same.
Background
In order to reduce the area and cost of a power chip without sacrificing the driving capability, there is a method of selecting a power transistor with a size as small as possible on the premise of having the same on-resistance, and therefore, a higher power supply voltage is required to turn on the power transistor with a smaller size. For example, if a conventional power chip includes a power PMOS transistor, on the premise of having the same on-resistance, because the size of the power NMOS transistor is much smaller, especially when more and more product applications require power chips such as a class D power amplifier and a motor driver to realize high voltage, large driving capability and lower cost, in the high-voltage DMOS process, the power DNMOS transistor having the same on-resistance is three times smaller than the power DPMOS transistor, so that the larger reduction of the chip area can be realized, and a process mask (mask) can be avoided, thereby reducing the cost. However, as mentioned above, this requires a higher driving voltage to turn on the power DNMOS transistor.
Therefore, it is desirable to provide a technical solution to effectively solve the problem of requiring a higher driving voltage due to the selection of a smaller power transistor when reducing the area and cost of the power chip.
Disclosure of Invention
In view of the above, one of the technical problems to be solved by the embodiments of the present application is to provide a charge pump circuit and an electronic device using the same, so as to provide a higher driving voltage for a smaller power transistor.
The embodiment of the application provides a charge pump circuit, it includes: the first branch circuit comprises a plurality of first switching devices, the first branch circuit is used for enabling the first energy storage unit to be in a charged state through the switching action coordination of the first switching devices, and the detection unit is used for detecting electric signals of detection ends in the first energy storage unit so as to change the switching action coordination of the first switching devices at least, so that the pressure difference between the detection ends in the first energy storage unit meets a preset electric signal threshold value.
An embodiment of the present application further provides an electronic device, which includes the charge pump circuit as described above.
The charge pump circuit and the electronic device using the same are provided, wherein the charge pump circuit comprises a first branch circuit, a first energy storage unit and a detection unit, the first branch circuit comprises a plurality of first switching devices, the first branch circuit is used for enabling the first energy storage unit to be in a charged state through the switching action coordination of the first switching devices, the detection unit is used for detecting an electric signal of a detection end in the first energy storage unit so as to at least change the switching action coordination of the first switching devices, and therefore a voltage difference between the detection ends in the first energy storage unit meets a preset electric signal threshold value, and therefore a driving signal with a level higher than a power supply voltage can be output, and the problem that a smaller-size power tube is selected to need a higher driving voltage when the area and the cost of a power chip are reduced is effectively solved.
Drawings
Some specific embodiments of the present application will be described in detail hereinafter by way of illustration and not limitation with reference to the accompanying drawings. The same reference numbers in the drawings identify the same or similar elements or components. Those skilled in the art will appreciate that the drawings are not necessarily drawn to scale. In the drawings:
fig. 1 is a schematic structural diagram of a charge pump circuit according to an embodiment of the present disclosure;
FIG. 2 is a timing diagram of FIG. 1;
fig. 3 is a schematic structural diagram of a detection circuit according to an embodiment of the present disclosure;
fig. 4 is a timing diagram of fig. 3.
Detailed Description
It is not necessary for any particular embodiment of the invention to achieve all of the above advantages at the same time.
In order to make those skilled in the art better understand the technical solutions in the embodiments of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, but not all embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application shall fall within the scope of the protection of the embodiments in the present application.
The following further describes specific implementations of embodiments of the present application with reference to the drawings of the embodiments of the present application.
Fig. 1 is a schematic structural diagram of a charge pump circuit according to an embodiment of the present disclosure, as shown in fig. 1, including: the device comprises a first branch circuit, a first energy storage unit and a detection unit.
The first branch circuit comprises a plurality of first switching devices, the first branch circuit is used for enabling the first energy storage unit to be in a charged state through the switching action coordination of the plurality of first switching devices, and the detection unit is used for detecting the pressure difference between detection ends in the first energy storage unit so as to change the switching action coordination of the plurality of first switching devices at least, so that the pressure difference between the detection ends in the first energy storage unit meets a preset electric signal threshold value.
In this embodiment, the first switching device may be a single MOS transistor or a single field effect transistor, and this embodiment is not limited herein.
In this embodiment, the first energy storage unit may be a first capacitor C1, in which case, two ends of the first capacitor C1 are used as the detection terminals, and the voltage difference is a voltage difference between two ends (i.e., a positive terminal VP and a negative terminal VN) of the first capacitor C1. Of course, the first energy storage unit may also be other types of components, for example, the first energy storage element may be an energy storage circuit formed by connecting a plurality of capacitors in series or in parallel.
In this embodiment, through setting up first branch road, first energy storage unit, detecting element, can conveniently control the pressure differential between the detection end in the first energy storage unit and satisfy predetermined signal of telecommunication threshold value, and then make charge pump circuit can provide higher, stable driving voltage to under the condition that reduces power chip area and cost, provide higher driving voltage for the power tube that the size is less.
In this embodiment, as shown in fig. 1, the first branch includes three first switching devices K5, K4, and K2, one end of the first switching device K5 is connected to a power supply voltage, the other end of the first switching device K5 is connected to one end of the first switching device K4, the other end of the first switching device K4 is connected to one end of the first energy storage unit, the other end of the first energy storage unit is connected to one end of the first switching device K2, and the other end of the first switching device K2 is grounded.
In this embodiment, the switching operation of the first switching device K5 is controlled by the second switching signal CLK2, the switching operations of the first switching device K2 and the first switching device K4 are controlled by the first switching signal CLK1, the timing diagrams of the first switching signal CLK1 and the second switching signal CLK2 are shown in fig. 2, and the specific control method is described in detail in the following embodiments.
Specifically, the first switching signal CLK1 may control the first switching device K4 and the first switching device K2 to be turned on or off, the second switching signal CLK2 may control the first switching device K5 to be turned on or off, and when all three first switching devices are turned on, the first energy storage unit may be charged by a power supply voltage connected to the first switching device K5, so that the first energy storage unit is in a charged state.
Specifically, when the detection unit detects the voltage difference between the detection ends in the first energy storage unit, if the voltage difference between the two detection ends in the first energy storage unit meets a preset electrical signal threshold, the second switching signal CLK2 controls the first switching device K5 to turn off, so that the power supply voltage stops charging the energy storage element, and the voltage difference between the detection ends in the first energy storage unit is kept at the preset electrical signal threshold.
In this embodiment, the detection unit may be an operational amplifier, and the like, and this embodiment is not limited herein as long as it can be determined that the differential pressure between the two detection ends in the first energy storage unit satisfies a preset electrical signal threshold, and the following embodiments may be referred to for a specific implementation manner of the detection unit.
In this embodiment, the threshold of the electrical signal is a voltage difference signal, and the voltage difference signal is generated by a voltage regulator. In particular, the voltage difference signal may be an ultra-low voltage difference signal, and correspondingly, the voltage difference signal may be generated by a low voltage difference regulator.
Specifically, in the present embodiment, the voltage regulator may include an amplifier OP1, a voltage dividing circuit, a MOS transistor MOS1, and a capacitor C0.
The positive input end of the amplifier can input a reference voltage VREF, the output end of the amplifier is connected with the grid electrode of a MOS tube MOS1, the drain electrode of the MOS tube MOS1 is connected with a power voltage VDD, the source electrode of the MOS tube MOS1 is connected with the input end of a voltage division circuit, and the output end of the voltage division circuit is connected with the inverting input end of the amplifier to form a feedback loop.
In this embodiment, the voltage divider circuit includes two voltage dividing resistors R1 and R2 connected in series, one end of the voltage dividing resistor R2 is an input end of the voltage divider circuit, the other end of the voltage dividing resistor R2 is grounded through R1, an output end of the voltage dividing circuit is arranged between the voltage dividing resistor R1 and the voltage dividing resistor R2, and the output end is grounded through a capacitor C0.
In this embodiment, the source of MOS transistor MOS1 is used as the output terminal of the voltage regulator to output a voltage difference signal, where the value of voltage difference signal VLDO is:
the VLDO represents a voltage value of the voltage difference signal, the VREF represents a voltage value of the reference voltage, and R1 and R2 represent resistance values of the voltage dividing resistors R1 and R2, respectively.
In this embodiment, the value of the voltage difference signal VLDO may be changed by adjusting the resistances of the resistors R1 and R2 or adjusting the voltage value of the reference voltage VREF, so that the value of the driving voltage output by the charge pump circuit may be changed, and further, the voltage difference between the driving voltage output by the charge pump circuit and the power voltage may be smaller than the breakdown voltage of the DNMOS transistor driven by the charge pump circuit, so that the DNMOS transistor is not broken down and damaged. Specifically, when the DNMOS transistor is a high side nmos transistor of a thin gate oxide, the value of the voltage difference signal VLDO may be made less than or equal to 5V.
In this embodiment, the charge pump circuit may further include: and the second branch circuit at least comprises a second switching device, and when the pressure difference between the detection ends in the first energy storage unit meets a preset electric signal threshold, the second switching device included in the second branch circuit is used for being matched with the switching actions of the plurality of first switching devices, so that the first energy storage unit maintains the state that the pressure difference between the detection ends of the first energy storage unit meets the preset electric signal threshold.
Specifically, in this embodiment, the second switching branch includes a second switching device K6, one end of the second switching device K6 may be connected to the output terminal of the voltage regulator, and the other end of the second switching device K6 is connected to one end of the first switching device K4. The switching action of the second switching device is controlled by a third switching signal.
In this embodiment, the third switching signal may be an inverted signal (denoted as CLK2N) of the second switching signal, so that the switching operations of the first switching device K5 and the second switching device K6 may be reversed. Therefore, when the first switching device K5 is turned on and the second switching device K6 is turned off, the first energy storage unit is in a charged state; when the first switching device K5 is turned off and the second switching device K6 is turned on, the first energy storage unit is connected to the output terminal of the voltage regulator through the second switching device K6, and the voltage difference between the detection terminals in the first energy storage unit meets a preset electrical signal threshold (e.g., a voltage difference signal VLDO) through the voltage regulator.
In this embodiment, the charge pump circuit may further include: and the third branch circuit comprises a plurality of third switching devices, and is used for performing discharge processing on the first energy storage unit through the switching action coordination of the plurality of third switching devices, so that the value of the driving voltage is equal to the sum of the power voltage and the voltage difference between the detection ends in the first energy storage unit, namely the charge pump circuit outputs higher driving voltage.
Specifically, in this embodiment, the third branch includes two third switching devices K1 and K3, one end of the third switching device K1 is connected to the power supply voltage VDD, the other end of the third switching device K1 is connected to one end of the first energy storage unit, the other end of the first energy storage unit is connected to one end of the third switching device K3, and the two third switching devices K1 and the third switching device K3 are turned on to perform discharge processing on the first energy storage unit.
In this embodiment, when the first energy storage unit is the first capacitor C1, one end of the third switching device K1 is connected to the power voltage, and the other end of the third switching device K1 is connected to the negative plate of the first capacitor C1, and the positive plate of the first capacitor C1 is connected to one end of the third switching device K3, so that when the third switching device K1 and the third switching device K3 are turned on, the first capacitor C1 is discharged through the third switching device K3.
In this embodiment, the switching actions of the plurality of third switching devices are controlled by the same fourth switching signal. The fourth switching signal may be an inverted signal (also referred to as CLK1N) of the first switching signal, so that the on states of the first switching device K2 and the first switching device K4 are opposite to the on states of the third switching device K1 and the third switching device K3, and further, the first energy storage unit may be in a charged state when the first switching device K2 and the first switching device K4 turn on the third switching device K1 and the third switching device K3 turns off, and the first energy storage unit may be in a discharged state when the first switching device K2 and the first switching device K4 turn off the third switching device K1 and the third switching device K3 turns on.
Further, in this embodiment, the charge pump circuit further includes: and the third branch circuit enables the first energy storage unit to discharge the second energy storage unit through the switching action coordination of the plurality of third switching devices.
Specifically, the second energy storage unit may be a second capacitor C2, one end of the second capacitor C2 is connected to the first energy storage unit through a third switching device K3, and the other end is grounded.
The third branch circuit enables the first energy storage unit to discharge the second energy storage unit through the switching action coordination of the plurality of third switching devices so as to control the value of the driving voltage to be equal to the sum of the power supply voltage and the electric signal threshold, wherein the driving voltage is the driving voltage output by the charge pump circuit.
Specifically, when the third switching device K1 and the third switching device K3 are turned on, the first energy storage unit discharges the second energy storage unit through the third switching device K3, and is connected to the power supply voltage through the third switching device K1, so that the voltage difference between the second capacitor C2 and the ground is the sum of the power supply voltage and the threshold of the electrical signal, and the value of the driving voltage is equal to the sum of the power supply voltage and the threshold of the electrical signal.
Of course, in this embodiment, the first switching devices may be controlled in other manners, as long as the switching operation of some of the first switching devices is controlled by the first switching signal CLK1, and the switching operation of another part of the first switching devices is controlled by the second switching signal CLK2, so that the switching operations of the first switching devices can be controlled by the first switching signal CLK1 and the second switching signal CLK2 to cooperate, so that the three first switching devices K5, K4, and K2 can be turned on to make the first energy storage unit in the charged state.
In addition, in other implementation schemes of the present application, the number of the first switching devices may also be other values, as long as the first energy storage unit is disposed on the first branch, and the first energy storage unit may be in a charged state through the switching action coordination of the plurality of first switching devices, which is not limited herein.
The on/off states of the first switching device K5, the first switching device K4, the first switching device K2, the second switching device K6, the third switching device K1 and the third switching device K3, and the charging and discharging states of the first capacitor C1 and the second capacitor C2 are described below with reference to timing signals shown in fig. 2.
In the present embodiment, the first switching device K2 and the first switching device K4 are controlled by a first switching signal CLK1, and the third switching device K1 and the third switching device K3 are controlled by an inverted signal CLK1N of the first switching signal CLK 1; the first switching device K5 is controlled by a second switching signal CLK2, and the second switching device K6 is controlled by an inverted signal CLK2N of the second switching signal.
In the present embodiment, during the period t1-t2, the first switching signal CLK1 is at a high level and its inverted signal is at a low level, and the second switching signal is at a high level and its inverted signal is at a low level. At this time, the first switching device K5, the first switching device K4, and the first switching device K2 are turned on, the second switching device K6, the third switching device K1, and the third switching device K3 are turned off, and the first capacitor C1 is charged.
At time t2, the voltage difference at the detection end of the first capacitor C1 meets a preset electrical signal threshold, i.e., VLDO, at this time, the first switching signal maintains high level, the second switching signal jumps from high level to low level, and correspondingly, the inverted signal of the second switching signal jumps from low level to high level and maintains to time t 3. In the time period from t2 to t3, the first switching device K5 is turned off, the second switching device K6 is turned on, and the first capacitor C1 is connected to the voltage regulator through the second switching device K6, so that the voltage difference at the detection end of the first capacitor C1 is stabilized to VLDO through the output end of the voltage regulator.
At time t3, the second switching signal is maintained at a low level, the first switching signal transitions from a high level to a low level, and correspondingly, the inverted signal of the first switching signal transitions from a low level to a high level and is maintained at time t 4. Then in the time period t3-t4, the first switching device K5, the first switching device K4 and the first switching device K2 are turned off, and the second switching device K6, the third switching device K1 and the third switching device K3 are turned on, at which time the first capacitor C1 is in a discharging state.
At this time, the first capacitor C1 discharges the second capacitor C2, and the voltage value to ground (i.e. the output voltage of the charge pump circuit) VREG of the second capacitor C2 is made to be by switching the third switching device K1 and the third switching device K3:
VREG＝VDD+VLDO
as can be seen from the above formula, the voltage to ground (i.e., the output voltage of the charge pump circuit) VREG of the second capacitor C2 is:
at time t4, the first switch signal goes from low to high and triggers the second switch signal to go from low to high, so that the first switch signal is repeated with time t1, and then repeated with a period of t1-t 4.
It should be noted that the above embodiments are merely exemplary explanations, and the above technical solutions can also be applied to any scenario that needs to provide a higher power supply voltage.
An embodiment of the present application further provides an electronic device, which includes the charge pump circuit as described above.
Fig. 3 is a schematic structural diagram of a detection circuit according to an embodiment of the present application, as shown in fig. 3, the detection circuit includes: the fourth branch circuit, the fifth branch circuit and the third energy storage unit.
The fourth branch comprises a plurality of fourth switching devices, and the fifth branch comprises a plurality of fifth switching devices; the fourth branch circuit is used for sampling a preset electric signal threshold value to the third energy storage unit through the switch cooperation of the plurality of fourth switching devices, and the fifth branch circuit is used for sampling the pressure difference between the detection ends of the first energy storage unit to the third energy storage unit through the switch cooperation of the plurality of fifth switching devices so as to compare the pressure difference between the detection ends with the preset electric signal threshold value.
In this embodiment, the fourth branch includes two fourth switching devices K7, K9, and the third energy storage unit is located on the fourth branch formed by the two fourth switching devices K7 and the fourth switching device K9.
As shown in fig. 3 in particular, the fourth branch includes a PMOS transistor P1 as a power transistor, a fourth switching device K7, and a fourth switching device K9. The third energy storage unit may be a third capacitor C3.
The drain of the power tube P1 is used for accessing a preset electrical signal threshold, the gate of the power tube P1 is connected to the source, the source of the power tube P1 is connected to one end of the fourth switching device K7, so that one end of the fourth switching device K7 is accessed to the preset electrical signal threshold through the power tube P1, the other end of the fourth switching device K7 is connected to one end of the third capacitor C3, and the other end of the third capacitor C3 is grounded through the fourth switching device K9 to form the fourth branch.
When sampling is performed, the fourth switching device K7 and the fourth switching device K9 are turned on, so that a preset electric signal threshold passes through the power tube P1, the fourth switching device K7 and the fourth switching device K9 to be sampled to the third capacitor C3, and a voltage difference between two plates of the third capacitor C3 is a gate level value of the power tube P1.
In this embodiment, as shown in fig. 3, the fifth branch includes fifth switching devices K8 and K10, and the third energy storage unit is located on the fifth branch formed by the two fifth switching devices (K8 and K10).
As shown in fig. 3, the fifth branch includes a PMOS transistor P2 as a power transistor, fifth switching devices K8, K10, and a third energy storage unit, which is also a third capacitor C3.
One end of the fifth switching device K8 is connected to the inverting terminal VN of the first capacitor C1, the other end of the fifth switching device K8 is connected to one end of the third capacitor C3 and is connected to one end of the third capacitor C3, the other end of the third capacitor C3 is connected to the gate of the power transistor P2, the drain of the power transistor P2 is connected to one end of the fifth switching device K10, and the other end of the fifth switching device K10 is connected to the inverting terminal VP of the first capacitor C1.
When the voltage difference between the detection ends of the first energy storage unit is sampled, the fourth switching device K7 and the fourth switching device K9 are turned off, and the fifth switching device K8 and the fifth switching device K10 are turned on, so that the level value of the gate of the power tube P2 is the sum of the voltage differences between the inverting end VN of the first capacitor C1 and the two ends of the third capacitor C3, and the voltage difference between the detection ends of the first energy storage unit is sampled to the third energy storage unit through the switching cooperation of the plurality of fifth switching devices.
The sources of the power transistor P1 and the power transistor P2 may be grounded through a current mirror unit, the current mirror unit serves as an active load of the power transistor P1 and the power transistor P2, and the source of the power transistor P2 serves as an output terminal of the detection circuit, so as to output a detection result.
After sampling is completed, the pressure difference between the detection ends can be compared with a preset electric signal threshold value, so that the pressure difference of the detection ends in the first energy storage unit is detected, and whether the pressure difference meets the preset electric signal threshold value or not is judged.
According to the detection circuit provided by the embodiment, the superposition of the pressure difference between the detection ends and the preset electric signal threshold value can be realized through twice sampling, the pressure difference of the detection end of the first energy storage unit can be truly and accurately determined and compared with the electric signal threshold value, and then an accurate detection result is determined.
For example, in the charge pump circuit, since the first switching device K2 exists and the first switching device K2 exists an on-resistance when turned on, so that the level value of the inverse phase terminal VN of the first energy storage unit is higher than the level value of the ground (which may be 0V), and thus the voltage difference of the detection terminal of the first energy storage unit cannot be correctly determined if only the voltage of the positive phase terminal VP of the first energy storage unit is collected, in this embodiment, the detection unit may implement the superposition of the voltage difference between the detection terminals and the preset electrical signal threshold through twice sampling, and further may truly and accurately determine the voltage difference of the detection terminal of the first energy storage unit and compare the voltage difference with the electrical signal threshold, so as to prevent the resistance and the like of the first switching device K2 from affecting the detection terminal, and obtain an accurate detection result.
In another implementation of this embodiment, the detection circuit further includes: a compensation unit 31 for generating a compensation electrical signal for preventing the first energy storage unit from being overcharged.
Specifically, the compensation unit 31 of the detection circuit may include NMOS transistors N1, N2, N3 as power transistors, gates of the NMOS transistors N1, N2, N3 are all connected to the driving voltage VB, sources of the NMOS transistors N1, N2, and N3 are all connected to ground, a drain of the power transistor N1 is connected to a source of the power transistor P1, so that the power transistor P1 is connected to ground through the power transistor N1, drains of the power transistor N2 and the power transistor N3 are connected to a source of the power transistor P2, so that the power transistor P2 is connected to ground through the power transistors N2 and N3, where a ratio of width-to length ratios of the power transistors N1, N2, and N3 is 1: n 1: n2, the ratio of the width to length ratios of the power tube P1 to the power tube P2 is 1: m, when setting, m > (n1+ n2) and further the detection circuit can include offset voltage vos (offset voltage), so that the offset voltage can be used as a compensation electric signal to compensate the comparison result, and further the first energy storage unit is prevented from being overcharged.
The principle of offset voltage compensation is as follows:
in this embodiment, the magnitude of the generated offset voltage VOS may be determined according to the time of circuit delay, and the magnitude of the offset voltage is an increase of the voltage difference at the detection end of the first energy storage unit within the time range of the circuit delay.
Specifically, according to the above circuit, when the output terminal outputs a low level (i.e., the differential voltage between the detection terminals is greater than or equal to the preset electrical signal threshold), VP-VN > is VLDO-VOS.
Wherein, VP-VN is the voltage difference between the detection terminals, VLDO is the preset threshold of the electrical signal, and VOS is the offset voltage (i.e. the compensation electrical signal).
According to the formula, when the pressure difference between the detection ends is smaller than the preset electric signal threshold value VOS, the judgment result can be that the pressure difference between the detection ends is larger than or equal to the preset electric signal threshold value, and then the first energy storage unit is controlled not to be charged any more.
In this embodiment, when the detection circuit is applied to the charge pump circuit shown in fig. 1, since the detection circuit compares the voltage difference between the detection ends with a preset electrical signal threshold, and then a certain circuit delay occurs in the process of controlling the first energy storage unit not to be charged any more according to the detection result, the first energy storage unit is overcharged, that is, VP-VN > VLDO, which may cause the driving voltage output by the charge pump circuit to be too high, and then the power DNMOS transistor is broken down. Therefore, in the present embodiment, by providing the compensation unit 31, the problem of the first energy storage unit being overcharged due to circuit delay can be overcome.
Of course, in other implementations of the present application, the offset voltage may also be generated by other compensation units 31; alternatively, the compensation unit 31 may generate the compensation signal by using the offset voltage, or may also be implemented by using other manners, as long as the compensation signal can be used to prevent the first energy storage unit from being overcharged, and the embodiment is not limited herein.
In addition, in another embodiment of the present application, in order to control the first energy storage unit not to be charged any more according to the output of the detection circuit, the detection circuit further includes a control unit 32, where the control unit 32 is configured to generate at least a second switching signal according to a comparison result between the electric signal between the detection terminals and a preset electric signal threshold, and the second switching signal is configured to control the first energy storage unit to stop being charged.
Specifically, when the output end outputs a low level in the above embodiment, the voltage difference between the detection ends is greater than or equal to the preset electrical signal threshold as a result of the determination, the first energy storage unit is controlled to stop charging, and in fig. 1, the switch that controls the first energy storage unit to be charged is the first switch device K5, and the switch that controls the first energy storage unit not to be charged any more is the second switch device K6. Therefore, in this embodiment, the control unit 32 includes an inverter and a driving module, the inverter is configured to perform an inversion process on the comparison result and convert the comparison result into a high level signal, and the driving module is configured to generate at least a second switching signal according to the inverted comparison result, so as to control the first switching device K5 to be turned off and the second switching device K6 to be turned on, thereby controlling the first energy storage unit to stop charging. Specifically, when the first and second switching devices K5 and K6 are MOS transistors, the driving module may be a gate driving module. Of course, in other implementations of this embodiment, the inverse signals of the second switching signals may also be generated simultaneously by the driving module.
Fig. 4 is a timing chart corresponding to the detection circuit, and the following describes controlling the first energy storage unit not to be charged according to the output of the detection circuit, with reference to the timing chart shown in fig. 4.
In the present embodiment, the first switching device K2, the first switching device K4, the fifth switching device K8 and the fifth switching device K10 are controlled by a first switching signal CLK1, and the third switching device K1, the third switching device K3, the fourth switching device K7 and the fourth switching device K9 are controlled by an inverted signal CLK1N of the first switching signal CLK 1; the first switching device K5 is controlled by a second switching signal, and the second switching device K6 is controlled by an inverted signal of the second switching signal.
In the present embodiment, during the period t1-t2, the first switching signal CLK1 is at a high level and its inverted signal is at a low level, and the second switching signal is at a high level and its inverted signal is at a low level. At this time, the first switching device K5, the first switching device K4, the first switching device K2, the fourth switching device K7 and the fourth switching device K9 are turned on, the second switching device K6, the third switching device K1 and the third switching device K3 are turned off, the first capacitor C1 is in a charged state at this time, and the detection circuit samples a preset electric signal threshold to the third capacitor C3 through the fourth switching device K7 and the fourth switching device K9.
At time t 2', the voltage difference at the detecting end of the first capacitor C1 meets the preset threshold of the electric signal, namely VLDO-VOS, and at this time, the control module changes the level value of the second switching signal according to the output of the detecting circuit, so that the second switching signal jumps from high level to low level. t2-t 2' is the time of circuit delay.
After the time of circuit delay, when the second switching signal is switched from the high level to the low level by an electric signal to control the first switching device K5 to be turned off, and the inverted signal of the second switching signal is switched from the low level to the high level to control the second switching device K6 to be turned on, the first capacitor C1 can just store the energy VOS again, that is, the voltage difference of the first capacitor C1 is VLDO, at this time, the first capacitor C1 is connected with the voltage stabilizer through the second switching device K6, so that the voltage difference of the detection end of the first capacitor C1 is stabilized to be VLDO through the output end of the voltage stabilizer.
At time t2, the voltage difference at the detection end of the first capacitor C1 meets a preset electrical signal threshold, i.e., VLDO, at this time, the first switching signal maintains high level, the second switching signal jumps from high level to low level, and correspondingly, the inverted signal of the second switching signal jumps from low level to high level and maintains to time t 3. In the time period from t2 to t3, the first switching device K5 is turned off, the second switching device K6 is turned on, and the first capacitor C1 is connected to the voltage regulator through the second switching device K6, so that the voltage difference at the detection end of the first capacitor C1 is stabilized to VLDO through the output end of the voltage regulator.
At time t3, the second switching signal is maintained at a low level, the first switching signal transitions from a high level to a low level, and correspondingly, the inverted signal of the first switching signal transitions from a low level to a high level and is maintained at time t 4. Then in the time period t3-t4, the first switching device K5, the first switching device K4 and the first switching device K2 are turned off, and the second switching device K6, the third switching device K1 and the third switching device K3 are turned on, at which time the first capacitor C1 is in a discharging state.
It should be noted that the above embodiments are merely exemplary explanations, and the above technical solutions may also be applied to any scenario requiring voltage detection.
An embodiment of the present application further provides an electronic device, which includes the detection circuit as described above.
The above-described embodiments of the apparatus are merely illustrative, wherein the modules described as separate parts may or may not be physically separate, and the parts displayed as modules may or may not be physical modules, may be located in one place, or may be distributed on a plurality of network modules. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
Through the above description of the embodiments, those skilled in the art will clearly understand that each embodiment can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware. With this understanding in mind, the above-described technical solutions and/or portions thereof that contribute to the prior art may be embodied in the form of a software product that can be stored on a computer-readable storage medium including any mechanism for storing or transmitting information in a form readable by a computer (e.g., a computer). For example, a machine-readable medium includes Read Only Memory (ROM), Random Access Memory (RAM), magnetic disk storage media, optical storage media, flash memory storage media, electrical, optical, acoustical or other form of propagated signals (e.g., carrier waves, infrared signals, digital signals, etc.), and others, and the computer software product includes instructions for causing a computing device (which may be a personal computer, server, or network device, etc.) to perform the methods described in the various embodiments or portions of the embodiments.
Finally, it should be noted that: the above embodiments are only used for illustrating the technical solutions of the embodiments of the present application, and are not limited thereto; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions in the embodiments of the present application.
As will be appreciated by one of skill in the art, embodiments of the present application may be provided as a method, apparatus (device), or computer program product. Accordingly, embodiments of the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, embodiments of the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
Embodiments of the present application are described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (devices) and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
Claims (13)
1. A charge pump circuit, comprising: the detection unit is used for detecting an electric signal of a detection end in the first energy storage unit so as to change the switching action coordination of the plurality of first switching devices at least, so that the pressure difference between the detection ends in the first energy storage unit meets a preset electric signal threshold value;
the charge pump circuit further comprises a second branch circuit, the second branch circuit at least comprises a second switch device, and when the voltage difference between the detection ends in the first energy storage unit meets a preset electric signal threshold, the second switch device included in the second branch circuit is used for being matched with the switching actions of the plurality of first switch devices, so that the first energy storage unit maintains the state that the voltage difference between the detection ends of the first energy storage unit meets the preset electric signal threshold.
2. The circuit of claim 1, wherein the switching of a portion of the first switching devices in the plurality of first switching devices is controlled by a first switching signal, and wherein the switching of another portion of the first switching devices is controlled by a second switching signal.
3. The circuit as claimed in claim 1, wherein the first branch circuit comprises three first switching devices K5, K4 and K2, one end of the first switching device K5 is connected to a power supply voltage, the other end of the first switching device K5 is connected to one end of the first switching device K4, the other end of the first switching device K4 is connected to one end of the first energy storage unit, the other end of the first energy storage unit is connected to one end of the first switching device K2, the other end of the first switching device K2 is grounded, and the three first switching devices K5, K4 and K2 are closed to enable the first energy storage unit to be in a charged state.
4. The circuit of claim 1, wherein the electrical signal threshold is a voltage difference signal, the voltage difference signal generated by a low dropout regulator.
5. The circuit of claim 1, wherein the first energy storage unit is disposed on the first branch to be charged in cooperation with switching actions of the plurality of first switching devices.
6. The circuit of claim 1, wherein when the first energy storage unit comprises a first capacitor, two terminals of the first capacitor are used as the detection terminal, and the voltage difference between the detection terminals of the first energy storage unit is the voltage difference between two terminals of the first capacitor.
7. The circuit of claim 1, wherein the switching action of the second switching device is controlled by a third switching signal.
8. The circuit of claim 1, further comprising: and the third branch circuit comprises a plurality of third switching devices, and is used for performing discharge processing on the first energy storage unit through the matching of the switching actions of the plurality of third switching devices.
9. The circuit as claimed in claim 8, wherein the third branch comprises two third switching devices K1, K3, one end of the third switching device K1 is connected to a power supply voltage, the other end of the third switching device K1 is connected to one end of the first energy storage unit, the other end of the first energy storage unit is connected to one end of the third switching device K3, and the two third switching devices K1, K3 are closed to discharge the first energy storage unit.
10. The circuit of claim 8, wherein the switching of the plurality of third switching devices is controlled by the same fourth switching signal.
11. The circuit of claim 8, further comprising: and the third branch circuit enables the first energy storage unit to discharge the second energy storage unit through the switching action coordination of the plurality of third switching devices.
12. The circuit of claim 11, wherein the third branch is configured to discharge the second energy storage unit from the first energy storage unit by the switching action of the plurality of third switching devices, so as to control the driving voltage to have a value equal to the sum of the power voltage and the voltage difference between the detection terminals of the first energy storage unit.
13. An electronic device comprising a charge pump circuit as claimed in any one of claims 1 to 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810124850.0A CN108306502B (en) | 2018-02-07 | 2018-02-07 | Charge pump circuit and electronic device using same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810124850.0A CN108306502B (en) | 2018-02-07 | 2018-02-07 | Charge pump circuit and electronic device using same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108306502A CN108306502A (en) | 2018-07-20 |
| CN108306502B true CN108306502B (en) | 2020-06-05 |
Family
ID=62864830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810124850.0A Active CN108306502B (en) | 2018-02-07 | 2018-02-07 | Charge pump circuit and electronic device using same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108306502B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI753278B (en) * | 2018-07-30 | 2022-01-21 | 新加坡商普里露尼庫斯新加坡私人有限公司 | Solid-state imaging device, driving method for solid-state imaging device, and electronic device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI256761B (en) * | 2003-12-22 | 2006-06-11 | Sunplus Technology Co Ltd | Charging pump circuitry |
| CN101694961A (en) * | 2009-09-18 | 2010-04-14 | 和芯微电子(四川)有限公司 | Low ripple wave boosting type charge pump |
| CN105305811B (en) * | 2014-06-28 | 2018-01-26 | 嘉兴禾润电子科技有限公司 | Charge pump drive circuit system for stepper motor |
| CN105183067B (en) * | 2015-08-05 | 2017-03-29 | 矽恩微电子(厦门)有限公司 | The high pressure LDO of charge pumps |
| CN105356742B (en) * | 2015-11-06 | 2017-11-10 | 灿芯半导体(上海)有限公司 | A kind of high efficiency charge pump |
-
2018
- 2018-02-07 CN CN201810124850.0A patent/CN108306502B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN108306502A (en) | 2018-07-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109716258B (en) | Apparatus and method for stabilizing supply voltage | |
| US10474174B2 (en) | Programmable supply generator | |
| US9666287B2 (en) | Voltage detector, method for setting reference voltage and computer readable medium | |
| KR102127132B1 (en) | Detection circuit and electronic device using the same | |
| US9639108B2 (en) | Power supply circuit | |
| US20060176119A1 (en) | Voltage-frequency conversion apparatus and method of changing reference voltage thereof | |
| US11699954B2 (en) | Multi-phase switching regulator including interleaving circuit and switching regulating method using the same | |
| KR101748055B1 (en) | Low voltage current reference generator for a sensing amplifier | |
| KR20100089787A (en) | Oscillator circuit and memory system | |
| KR970023453A (en) | Flash memory device | |
| CN108306502B (en) | Charge pump circuit and electronic device using same | |
| KR20130072137A (en) | Voltage regulator | |
| US10819237B1 (en) | Gate voltage plateau completion circuit for DC/DC switching converters | |
| US9396767B1 (en) | Voltage division circuit, circuit for controlling operation voltage and storage device | |
| US11114880B2 (en) | Current regulating circuit and power supply management circuit including the same | |
| CN112639657A (en) | Full-digital closed-loop voltage generator | |
| CN111366874A (en) | Electric leakage detection circuit, electric leakage detection device and electric leakage detection method for flash memory | |
| CN112242736B (en) | Lithium battery protection circuit and device | |
| CN112462836B (en) | POK circuit with delay function applied to LDO (Low dropout regulator) and LDO circuit | |
| EP3709124A1 (en) | Fast-enable current source | |
| KR20170104787A (en) | Charge pump circuit and internal voltage generation circuit including the same | |
| CN108376015B (en) | Mirror circuit and power management chip | |
| JP2008158744A (en) | Regulator circuit | |
| KR20040040966A (en) | Half Voltage generator of low power consumption | |
| JPH05315544A (en) | Semiconductor integrated circuit device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: 201199 Room 1201, Lane 908, Xiuwen Road, Minhang District, Shanghai Patentee after: Shanghai Awinic Technology Co.,Ltd. Address before: Room 303-39, 33 Block 680 Guiping Road, Xuhui District, Shanghai, 2003 Patentee before: Shanghai Awinic Technology Co.,Ltd. |
|
| CP02 | Change in the address of a patent holder |