CN108281383B - Substrate cutting method and manufacturing method of array substrate - Google Patents
Substrate cutting method and manufacturing method of array substrate Download PDFInfo
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- CN108281383B CN108281383B CN201810059863.4A CN201810059863A CN108281383B CN 108281383 B CN108281383 B CN 108281383B CN 201810059863 A CN201810059863 A CN 201810059863A CN 108281383 B CN108281383 B CN 108281383B
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- 239000000758 substrate Substances 0.000 title claims abstract description 140
- 238000005520 cutting process Methods 0.000 title claims abstract description 136
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000001816 cooling Methods 0.000 claims abstract description 13
- 230000000694 effects Effects 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 15
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 239000000112 cooling gas Substances 0.000 claims description 3
- 239000000110 cooling liquid Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 36
- 239000011521 glass Substances 0.000 description 14
- 238000003698 laser cutting Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a substrate cutting method and a manufacturing method of an array substrate, which comprise the following steps: forming a cutting line pattern on a substrate base plate; passing an electric current through the cutting wire to produce a galvanic thermal effect; and cooling the surface of the substrate base plate where the cutting line is positioned so as to break the substrate base plate along the cutting line. The technical scheme of the substrate cutting method and the array substrate manufacturing method can improve the substrate cutting efficiency.
Description
Technical Field
The invention relates to the technical field of display, in particular to a substrate cutting method and a manufacturing method of an array substrate.
Background
Due to the rapid development of daily consumer electronics, products such as televisions, notebook computers, mobile phones, etc. are all developing in the direction of thinner volume, lighter weight, and lower manufacturing cost. The glass substrate thickness of various displays is also gradually decreasing. Since the thinner the thickness of the glass substrate, the more sensitive it is to force, the more susceptible it is to brittle fracture after impact, which undoubtedly increases the difficulty of cutting.
There are two general methods for cutting a glass substrate, that is, a cutter wheel cutting method and a laser cutting method. Among them, the cutter wheel cutting method is a commonly used physical cutting method, scratches are generated on the surface of glass through a traditional diamond or hard alloy cutter wheel, and the glass can be cracked along the direction of the scratches due to stress concentration. However, the precision of such mechanical cutting is low, which affects the yield of cutting.
The laser cutting method is a stress cutting method in which a glass is scanned with laser light, and the glass absorbs laser energy, and a local rapid temperature rise occurs to generate stress, and a crack is generated due to a change in the stress, so that the glass is cracked in a laser scanning direction.
However, both the wheel cutting method and the laser cutting method require the glass substrate to be cut multiple times one by one, which greatly reduces the cutting efficiency of the glass substrate, especially in the small-sized glass cutting process.
Disclosure of Invention
The present invention is directed to at least one of the technical problems of the prior art, and provides a substrate cutting method and a manufacturing method of an array substrate, which can improve the cutting efficiency of the substrate.
To achieve the object of the present invention, there is provided a substrate cutting method including:
forming a cutting line pattern on a substrate base plate;
passing an electric current through the cutting wire to produce a galvanic thermal effect;
and cooling the surface of the substrate base plate where the cutting line is positioned so as to break the substrate base plate along the cutting line.
Preferably, the step of forming a scribe line pattern on the base substrate is performed simultaneously with the step of forming a pattern of the conductive metal layer on the base substrate.
Preferably, the conductive metal layer is a gate layer or a light-shielding metal layer.
Preferably, in the step of passing an electric current through the cutting wire to generate the thermal effect of the electric current, a constant voltage is applied to both ends of the cutting wire, or a constant current is passed through the cutting wire to pass the electric current through the cutting wire.
Preferably, the heat required for breaking the substrate base plate along the cutting line satisfies the following formula:
Q＝Cm(T1-T2)
q is the heat required by the substrate base plate to be disconnected along the cutting line;
c is the specific heat capacity;
m is the mass of the cutting line, m ═ ρ0SL，ρ0Is the density of the cutting line; s is the cross-sectional area of the cutting line; l is the length of the cutting line;
T1the temperature of the cutting wire after being electrified;
T2the temperature of the substrate after cooling.
Preferably, the constant voltage satisfies the following formula:
U2t/R＝Q
wherein U is the constant voltage;
t is the time for the current to pass through the cutting line;
r is the resistance of the cutting line;
q is the heat required for breaking the substrate base plate along the cutting line.
Preferably, the constant current satisfies the following formula:
I2Rt＝Q
wherein I is the constant current;
t is the time for the current to pass through the cutting line;
r is the resistance of the cutting line;
q is the heat required for breaking the substrate base plate along the cutting line.
Preferably, in the step of cooling the substrate base plate to break the substrate base plate along the dicing lines, a surface of the substrate base plate where the dicing lines are located is cooled with a cooling gas or a cooling liquid.
As another aspect, the present invention further provides a method for manufacturing an array substrate, in which the substrate cutting method provided by the present invention is used to cut a substrate of the array substrate.
Preferably, the method comprises the following steps:
forming a thin film transistor on a substrate;
forming a flat layer on the substrate on which the thin film transistor is formed;
forming a first electrode layer on the substrate on which the planarization layer is formed;
forming a light emitting layer on the substrate on which the first electrode layer is formed;
forming a second electrode layer on the substrate on which the light emitting layer is formed;
forming a packaging layer on the substrate with the second electrode layer;
in the step of forming the thin film transistor on the substrate, the step of forming a cutting line pattern on the substrate is carried out while forming a pattern of any one conductive metal layer of the thin film transistor on the substrate;
after the packaging layer is formed on the substrate with the second electrode layer, the step of enabling current to pass through the cutting line to generate current heat effect is carried out; and a step of cooling the surface of the substrate base plate where the dicing line is located to break the substrate base plate along the dicing line.
The invention has the following beneficial effects:
according to the technical scheme of the substrate cutting method and the array substrate manufacturing method, cutting line patterns are formed on a substrate; passing an electric current through the cutting wire to produce a galvanic thermal effect; the substrate base plate is cooled to be broken along the cutting line. Therefore, the substrate base plate can be cut at one time without cutting for many times, so that compared with the prior art, the process steps are simplified, and the cutting efficiency of the base plate is improved.
Drawings
Fig. 1 is a flow chart of a substrate cutting method according to the present invention;
figure 2 is a block diagram of a cutting line used in an embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the substrate cutting method and the array substrate manufacturing method provided by the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 1, the method for cutting a substrate according to the present invention includes:
s1, forming a cutting line pattern on the base substrate;
s2, passing current through the cutting line to generate current heat effect;
s3, the surface of the substrate where the dicing line is located is cooled to break the substrate along the dicing line.
The base substrate is typically a glass substrate.
The current thermal effect is a phenomenon in which electric energy is converted into thermal energy when current passes through a conductor.
Through making the electric current pass through the cutting line, can make the temperature of cutting line sharply rise with the mode that the electric energy converts the heat energy into, later cool off the surface that the cutting line of substrate base plate is located fast, can make the surface of substrate base plate produce great temperature gradient to the substrate base plate is along the direction fracture of cutting line, and then the completion is once only cut along cutting line disconnection of cutting line. Here, the temperature gradient means a large temperature difference generated between the dicing line and the substrate base plate.
Therefore, the substrate base plate can be cut at one time without cutting for many times, so that compared with the prior art, the process steps are simplified, and the cutting efficiency of the base plate is improved.
Preferably, the step S1 is performed simultaneously with the pattern formation of the conductive metal layer on the base substrate. That is, the cutting line is simultaneously formed with the conductive metal layer, so that the process steps can be further simplified. Specifically, the pattern of the cutting line may be added to a mask of any conductive metal layer of the thin film transistor, and the patterning of the film layer of the cutting line on the substrate may be completed through a photolithography process, an etching process (e.g., wet etching) and a lift-off process in sequence.
The conductive metal layer may be a gate layer or a light-shielding metal layer in a thin film transistor, or the like. The light-shielding metal layer is used for preventing the influence of external light on the thin film transistor in the process. Of course, in practical application, the conductive metal layer may also be any other conductive metal layer in the array substrate.
In the above step S2, a constant voltage is applied to both ends of the cutting line, or a constant current is applied to the cutting line so that the current passes through the cutting line. Specifically, the cutting wire may be electrically connected to a constant voltage power supply, or the cutting wire may be electrically connected to a constant current power supply.
Further, the heat required for breaking the substrate base plate along the cutting line satisfies the following formula:
Q＝Cm(T1-T2)
q is the heat required by the disconnection of the substrate base plate along the cutting line;
c is the specific heat capacity;
m is the mass of the cutting line, m ═ ρ0SL，ρ0Is the density of the cutting line; s is the cross-sectional area of the cutting line; l is the length of the cutting line;
T1the temperature of the cutting wire after being electrified;
T2is the temperature of the substrate after cooling.
According to the above formula, the amount of heat required for breaking the substrate base plate along the cutting line can be calculated.
From the above heat quantity Q, a constant voltage or a constant current can be calculated. Specifically, the constant voltage satisfies the following formula:
U2t/R＝Q
wherein U is a constant voltage;
t is the time for the current to pass through the cutting line;
r is the resistance of the cutting line;
q is the amount of heat required to break the substrate along the cutting lines.
The constant current satisfies the following formula:
I2Rt＝Q
wherein I is constant current;
t is the time for the current to pass through the cutting line;
r is the resistance of the cutting line;
q is the heat required for breaking the substrate base plate along the cutting line.
Taking the material of the scribe line as Mo metal for example, the resistivity ρ of Mo is 5.6 Ω · m. Assuming that the width of the dicing line is 100 μm and the thickness is 1 μm, the length L of the dicing line is equal to the width or length of the substrate base plate, taking the length of the dicing line equal to 470mm of the length of the glass base plate as an example.
For example, as shown in fig. 2, the number of the cutting lines 2 is three, and the three cutting lines 2 are provided at intervals in the width direction of the substrate base plate 1. And, the length of each cutting line 2 is equal to the width of the substrate base 1.
T1The temperature after the cutting wire is electrified can be 105 ℃; t is2The temperature of the substrate after cooling was 25 ℃ to thereby obtain a substrateThe temperature difference between the cutting line and the substrate base plate is as high as 80 ℃, so that the substrate base plate can be cut off along the cutting line to finish one-time cutting.
The resistance of the cutting line, R2.63 x 10 omega, can be calculated according to the formula, R rho L/S, wherein S is the cross-sectional area of the cutting line.
According to the formula Q ═ Cm (T)1-T2)＝Cρ0SL(T1-T2) The heat Q required for obtaining the substrate breaking along the cutting line can be calculated to be 9.6 x 10 x-3J。
If a constant voltage is loaded on the cutting line, if the heating time t is 5 min; according to formula U2the voltage across the cutting line was calculated to be 918.6V.
If a constant current is loaded to the cutting line, if the heating time t is 1 ms; according to formula I2Rt — Q can be calculated to give a constant current of 19 uA.
In the above step S3, the surface of the substrate base plate where the dicing lines are located may be cooled by using a cooling gas or a cooling liquid. In addition, the cooling time of the glass substrates with different thicknesses is different, the cooling time of the thicker substrate is longer, and the cooling time of the thinner substrate is shorter.
In summary, the substrate cutting method provided by the invention can complete the cutting of the substrate at one time without performing multiple cutting, thereby simplifying the process steps and improving the cutting efficiency of the substrate compared with the prior art.
As another technical solution, the present invention further provides a method for manufacturing an array substrate, which cuts a substrate of the array substrate by using the substrate cutting method provided by the present invention.
Specifically, the manufacturing method of the array substrate comprises the following steps:
step 3, forming a first electrode layer on the substrate with the flat layer;
step 4, forming a light emitting layer on the substrate with the first electrode layer;
step 5, forming a second electrode layer on the substrate with the luminescent layer;
and 6, forming a packaging layer on the substrate with the second electrode layer.
In step 2, a pattern of any one of the conductive metal layers of the thin film transistor is formed on the base substrate, and a step of forming a pattern of a scribe line on the base substrate is performed, so that the process steps can be further simplified.
After step 6, the above steps S2 and S3 are performed.
It is easy to understand that a plurality of array substrates (including the thin film transistors and the functional layers) are provided on one substrate, and the array substrates can be formed into independent panels by cutting the substrate.
According to the manufacturing method of the array substrate, the substrate cutting method provided by the invention can be used for cutting the substrate at one time without cutting for multiple times, so that compared with the prior art, the processing steps are simplified, and the cutting efficiency of the substrate is improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (7)
1. A manufacturing method of an array substrate is characterized by comprising the following steps:
forming a thin film transistor on a substrate;
forming a flat layer on the substrate on which the thin film transistor is formed;
forming a first electrode layer on the substrate on which the planarization layer is formed;
forming a light emitting layer on the substrate on which the first electrode layer is formed;
forming a second electrode layer on the substrate on which the light emitting layer is formed;
forming a packaging layer on the substrate with the second electrode layer;
in the step of forming the thin film transistor on the substrate, a cutting line pattern is formed while a pattern of any one conductive metal layer of the thin film transistor is formed on the substrate;
after forming a packaging layer on the substrate with the second electrode layer, enabling current to pass through the cutting line to generate a current thermal effect; and cooling the surface of the substrate base plate where the cutting line is located so as to break the substrate base plate along the cutting line.
2. The method for manufacturing the array substrate according to claim 1, wherein the conductive metal layer is a gate layer or a light-shielding metal layer.
3. The method as claimed in claim 1, wherein in the step of passing a current through the cutting line to generate a current thermal effect, a constant voltage is applied to two ends of the cutting line, or a constant current is applied to the cutting line to pass a current through the cutting line.
4. The method for manufacturing the array substrate according to claim 3, wherein the amount of heat required for breaking the substrate along the cutting line satisfies the following formula:
Q＝Cm(T1-T2)
q is the heat required by the substrate base plate to be disconnected along the cutting line;
c is the specific heat capacity;
m is the mass of the cutting line, m ═ ρ0SL，ρ0Is the density of the cutting line; s is the cross-sectional area of the cutting line; l is the length of the cutting line；
T1The temperature of the cutting wire after being electrified;
T2the temperature of the substrate after cooling.
5. The method for manufacturing the array substrate according to claim 4, wherein the constant voltage satisfies the following formula:
U2t/R＝Q
wherein U is the constant voltage;
t is the time for the current to pass through the cutting line;
r is the resistance of the cutting line;
q is the heat required for breaking the substrate base plate along the cutting line.
6. The method for manufacturing the array substrate according to claim 4, wherein the constant current satisfies the following formula:
I2Rt＝Q
wherein I is the constant current;
t is the time for the current to pass through the cutting line;
r is the resistance of the cutting line;
q is the heat required for breaking the substrate base plate along the cutting line.
7. The method for manufacturing an array substrate according to claim 1, wherein in the step of cooling the substrate base plate to break the substrate base plate along the cutting lines, a cooling gas or a cooling liquid is used to cool a surface of the substrate base plate where the cutting lines are located.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0903327A2 (en) * | 1997-09-17 | 1999-03-24 | Nec Corporation | Method for separating non-metal material |
| CN101339320A (en) * | 2008-08-12 | 2009-01-07 | 友达光电（苏州）有限公司 | Liquid crystal panel manufacture method |
| KR20170080298A (en) * | 2015-12-31 | 2017-07-10 | 엘지디스플레이 주식회사 | Display device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001170899A (en) * | 1999-12-17 | 2001-06-26 | Sharp Corp | Resin board cutting method |
| CN102574232A (en) * | 2009-09-29 | 2012-07-11 | 皮可钻机公司 | A method of cutting a substrate and a device for cutting |
| KR20130110990A (en) * | 2012-03-30 | 2013-10-10 | 삼성디스플레이 주식회사 | Organic light emitting diode display and method for repairing organic light emitting diode display |
| KR102104608B1 (en) * | 2013-05-16 | 2020-04-27 | 삼성디스플레이 주식회사 | TFT substrate including barrier layer including silicon oxide layer and silicon silicon nitride layer, Organic light-emitting device comprising the TFT substrate, and the manufacturing method of the TFT substrate |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0903327A2 (en) * | 1997-09-17 | 1999-03-24 | Nec Corporation | Method for separating non-metal material |
| CN101339320A (en) * | 2008-08-12 | 2009-01-07 | 友达光电（苏州）有限公司 | Liquid crystal panel manufacture method |
| KR20170080298A (en) * | 2015-12-31 | 2017-07-10 | 엘지디스플레이 주식회사 | Display device |
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