CN108279538A - Thin Film Transistor-LCD - Google Patents
Thin Film Transistor-LCD Download PDFInfo
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- CN108279538A CN108279538A CN201810241364.7A CN201810241364A CN108279538A CN 108279538 A CN108279538 A CN 108279538A CN 201810241364 A CN201810241364 A CN 201810241364A CN 108279538 A CN108279538 A CN 108279538A
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- Prior art keywords
- silicon island
- dottle pin
- locating part
- transistor
- tft
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
Abstract
This application involves a kind of Thin Film Transistor-LCDs, including the colored optical filtering substrates and transistor (TFT) array substrate being oppositely arranged.Array-like silicon island is formed on the transistor (TFT) array substrate, the colored optical filtering substrates are equipped with cylindricality dottle pin.The locating part that a confined planes are provided is additionally provided between the colored optical filtering substrates and the transistor (TFT) array substrate.When the locating part is set on the colored optical filtering substrates, the confined planes and the side wall of the silicon island coordinate to limit displacement of the silicon island relative to the colored optical filtering substrates；When the locating part is set on the transistor (TFT) array substrate, the side wall of the confined planes and the cylindricality dottle pin coordinates to limit the displacement of the opposite transistor (TFT) array substrate of the cylindricality dottle pin.Herein described Thin Film Transistor-LCD can effectively avoid the problem of misalignment between colored optical filtering substrates and transistor (TFT) array substrate, improve yields.
Description
Technical field
This application involves field of liquid crystal more particularly to a kind of Thin Film Transistor-LCDs.
Background technology
Thin Film Transistor-LCD includes to the molding transistor (TFT) array substrate of box (TFT) and colored optical filtering substrates
(CF), it is supported by the cylindricality dottle pin (Post Spacer) on colored optical filtering substrates therebetween, it is thick high with keeping box
(cell gap) is spent uniformly, convenient for injection liquid crystal.In general, before transistor (TFT) array substrate and colored optical filtering substrates are to box cylindricality every
Pad is for stick-up state.Transistor (TFT) array substrate and colored optical filtering substrates are after to box, cylindricality dottle pin and transistor array
Support part is completed in silicon island cooperation on row substrate.Silicon island is formed by the TFT switch of matrix arrangement on transistor (TFT) array substrate
Rectangular protrusion.After cylindricality dottle pin is by the extruding of silicon island, flexible deformation will be generated.
Include lighting detection in subsequent inspection operation.Lighting detection is to avoid subsequent thin film transistor liquid crystal aobvious
Show device patted or transportational process in will appear transistor (TFT) array substrate and colored optical filtering substrates or more dislocation caused by Mura,
Influence the quality of product.In general, this kind of Mura can show as the light leakage of pixel left and right sides or upper and lower sides.
After beating or vibration, colored optical filtering substrates are easy to produce under external force Thin Film Transistor-LCD
Raw displacement.Position of the cylindricality dottle pin between transistor (TFT) array substrate and colored optical filtering substrates can also misplace.Once cylindricality
Dottle pin jumps out its corresponding silicon island region, and elastic potential energy is released, to be returned to the height before box.Due to the height to box
Degree can not change after being formed, and will cause cylindricality dottle pin that can not reply compressive state under the obstruction of silicon island side wall.Cylindricality dottle pin with
It is opposite that silicon island corresponding to it causes transistor (TFT) array substrate and colored optical filtering substrates to occur because of that can not restPose
Displacement, here it is the producing causes of this kind of Mura.
Invention content
The application proposes that one kind avoids by cylindricality dottle pin limits between transistor (TFT) array substrate and colored optical filtering substrates
The Thin Film Transistor-LCD of relative displacement, including following technical solution occurs：
A kind of Thin Film Transistor-LCD, including the colored optical filtering substrates and transistor (TFT) array substrate that are oppositely arranged,
Be formed with array-like silicon island on the transistor (TFT) array substrate, the colored optical filtering substrates be equipped with the silicon island top surface coordinate with
Keep the cylindricality dottle pin of distance between the colored optical filtering substrates and the transistor (TFT) array substrate, the colored optical filtering substrates and
Locating part is additionally provided between the transistor (TFT) array substrate, the locating part provides a confined planes, when the locating part is set to
When on the colored optical filtering substrates, the confined planes and the side wall of the silicon island coordinate to limit the silicon island relative to the coloured silk
The displacement of color optical filtering substrate；When the locating part is set on the transistor (TFT) array substrate, the confined planes and the column
The side wall of shape dottle pin coordinates to limit the displacement of the relatively described transistor (TFT) array substrate of the cylindricality dottle pin.
Wherein, when the locating part is set on the colored optical filtering substrates, side of the confined planes in the silicon island
Projection on wall is contained within the side wall of the silicon island；When the locating part is set on the transistor (TFT) array substrate,
Projection of the column dottle pin on the confined planes is contained within the confined planes.
Wherein, colour corresponding with the silicon island position is equipped on the face of colored optical filtering substrates silicon island described in face
Pixel, each one described silicon island of the colour element face, the cylindricality dottle pin are located at the colour element and the silicon
Between island.
Wherein, the silicon island is arranged along orthogonal first direction and second direction in array-like, and the locating part is set
It is placed on the transistor (TFT) array substrate, the locating part includes the first limited post and the second limited post, first limited post
Divide the both sides for arranging the column dottle pin in said first direction with second limited post.
Wherein, the column dottle pin is divided into the first column dottle pin and the second column dottle pin, the first column dottle pin and institute
It states the second column dottle pin to be respectively arranged in the different colour elements, first limited post and the first column dottle pin
Cooperation, second limited post coordinate with the second column dottle pin.
Wherein, the locating part is set to the top surface of the silicon island.
Wherein, the silicon island is arranged along orthogonal first direction and second direction in array-like, and the locating part is set
Be placed on the colored optical filtering substrates, the locating part include first limit pad and second limit pad, it is described first limit pad with
The second limit pad divides the both sides for arranging the silicon island in said first direction.
Wherein, the silicon island is divided into the first silicon island and the second silicon island, and first silicon island and second silicon island are along described
First direction arranges, and the first limit pad coordinates with first silicon island, and the second limit pad is matched with second silicon island
It closes.
Wherein, the locating part is set to the top surface of the colour element.
Wherein, the locating part also divides the both sides for arranging the column dottle pin or the silicon island in this second direction.
Herein described Thin Film Transistor-LCD passes through the colored optical filtering substrates being oppositely arranged and the crystalline substance
On array-like silicon island and the colored optical filtering substrates in body pipe array substrate and the transistor (TFT) array substrate with it is described
Silicon island top surface cooperation the cylindricality dottle pin, maintain between the colored optical filtering substrates and the transistor (TFT) array substrate away from
From.By the locating part being set between the colored optical filtering substrates and the transistor (TFT) array substrate, with the cylindricality dottle pin
Side wall or the side wall of the silicon island match to realize relative position between the silicon island and the cylindricality dottle pin.It is described
Locating part because of dislocation occurs between the colored optical filtering substrates and the transistor (TFT) array substrate it is possible to prevente effectively from cause
Mura phenomenons, improve the yields of the Thin Film Transistor-LCD, avoid scrapping.
Description of the drawings
Fig. 1 is the schematic cross-section of herein described Thin Film Transistor-LCD；
Fig. 2 is the schematic cross-section of herein described Thin Film Transistor-LCD second embodiment；
Fig. 3 is the schematic cross-section of herein described Thin Film Transistor-LCD 3rd embodiment；
Fig. 4 is the floor map of herein described Thin Film Transistor-LCD fourth embodiment；
Fig. 5 is the schematic cross-section of the 5th embodiment of herein described Thin Film Transistor-LCD；
Fig. 6 is the schematic cross-section of herein described Thin Film Transistor-LCD sixth embodiment；
Fig. 7 is the floor map of the 7th embodiment of herein described Thin Film Transistor-LCD；
Fig. 8 is the floor map of the 8th embodiment of herein described Thin Film Transistor-LCD.
Specific implementation mode
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation describes, it is clear that described embodiment is only a part of the embodiment of the application, instead of all the embodiments.Base
Embodiment in the application, those of ordinary skill in the art are obtained all without making creative work
Other embodiments shall fall in the protection scope of this application.
Thin Film Transistor-LCD 100 shown in please referring to Fig.1.Including 10 He of colored optical filtering substrates being oppositely arranged
Transistor (TFT) array substrate 20.The colored optical filtering substrates 10 are equipped with cylindricality dottle pin 11, are made on the transistor (TFT) array substrate 20
There is array-like silicon island 21.The silicon island 21 is by being in 22 shape of TFT switch of rectangular preparation on the transistor (TFT) array substrate 20
At.Specifically, the silicon island 21 is formed by the TFT switch 22 and the inorganic layer 23 being covered on the TFT switch 22
's.The cylindricality dottle pin 11 is oppositely arranged with the silicon island 21, and the cylindricality dottle pin 11 is contacted with the top surface 211 of the silicon island 21
And coordinate, to support and keep the distance between the colored optical filtering substrates 10 and the transistor (TFT) array substrate 20.Fig. 1's
In embodiment, the colored optical filtering substrates 10 and the transistor (TFT) array substrate 20 have been completed to work to box, at this time the column
Shape dottle pin 11 is highly compressed with its own in the contact process of the silicon island 21, i.e., the described cylindricality dottle pin 11 is in elasticity
Deformation state has the elastic potential energy for restoring its original state.In general, the colored optical filtering substrates 10 and the transistor (TFT) array substrate
Liquid crystal can be injected between 20, to form the Thin Film Transistor-LCD 100.The colored optical filtering substrates 10 and the crystalline substance
It is additionally provided with locating part 30 between body pipe array substrate 20.The locating part 30 is set on the transistor (TFT) array substrate 20, institute
It states locating part 30 and a confined planes 301 is provided, so that the confined planes 301 and the side wall of the cylindricality dottle pin 11 cooperate,
It limits the cylindricality dottle pin 11 and generates displacement relative to the silicon island 21, the cylindricality dottle pin 11 and the silicon island are held with this
Relative position between 21.
The application limits displacement of the cylindricality dottle pin 11 relative to the silicon island 21 by the locating part 30, can be with
Prevent the cylindricality dottle pin 11 during beating or Transport Vibration, because position is occurred with the silicon island 21 by external impacts
It moves, to be detached from and the contact of the silicon island 21.The cylindricality dottle pin 11 disengaged can be extensive under the action of elastic potential energy
Multiple oneself height, and due between the colored optical filtering substrates 10 and the transistor (TFT) array substrate 20 to box height shape
At the compressive state when cylindricality dottle pin 11 can not be returned by self-deformation to box without outer force effect.
And the side wall of the silicon island 21 also blocks the resetting movement of the cylindricality dottle pin 11.At this point, 10 He of the colored optical filtering substrates
It misplaces between the transistor (TFT) array substrate 20, the electronic printing object (BM) of shading is used on the colored optical filtering substrates 10
It misplaces with the light transmission position on the transistor (TFT) array substrate 20, has eventually led to the Thin Film Transistor-LCD
100 Mura defects.And after herein described locating part 30 is added, between the column dottle pin 11 and the silicon island 21
When being subjected to displacement, because the locating part 30 is to the restriction effect of the side wall of the column dottle pin 11 so that the column dottle pin
11 can not move further towards the outer of the silicon island 21, thus avoid the de- of the column dottle pin 11 and the silicon island 21
From phenomenon.Relative position between the colored optical filtering substrates 10 and the transistor (TFT) array substrate 20 is ensured, is eliminated
The possibility that such Mura occurs.
It should be understood that in the embodiment in figure 1, the locating part 30 is set on the transistor (TFT) array substrate 20,
The confined planes 301 are matched with the side wall of the column dottle pin 11, to prevent the column dottle pin 11 relative to the silicon island
21 movement over range.In remaining some embodiment, the locating part 30 can also be set to the colored optical filtering substrates 10
On, the confined planes 301 are matched with the side wall of the silicon island 21, to limit the silicon island 21 relative to the column dottle pin 11
Movement over range, the application institute technique effect to be achieved can also be played.Therefore, herein described tft liquid crystal
The locating part 30 is specifically set on the colored optical filtering substrates 10 display 100 or the transistor (TFT) array substrate 20
Upper no special provision.And for the material of the locating part 30, preferably select insulating materials to prepare.It is common, light can be selected
Material is hindered to prepare the locating part 30.
Further, to realize better limit effect, when the locating part 30 is set to the colored optical filtering substrates 10
When upper, projection of the confined planes 301 on the side wall of the silicon island 21 needs to be contained within the side wall of the silicon island 21.
The i.e. described confined planes 301 are combined with the side wall of the silicon island 21 completely with the mating surface of the silicon island 21, without because of the limit
The side wall of the confined planes 301 only area and the silicon island 21 is caused beyond the silicon island in the installation position of position part 30
It is in contact.It can ensure that the confined planes 301 and the side wall of the silicon island 21 come into full contact in this way.Correspondingly, working as the limit
When part 30 is set on the transistor (TFT) array substrate 20, projection of the column dottle pin 11 on the confined planes 301 is also received
It is dissolved within the confined planes 301.
The column dottle pin 11 is set on the colored optical filtering substrates 10, common, and the column dottle pin 11 is set to
In the colour element 40 of silicon island 21 described in face.Each 40 face of the colour element, one described silicon island 21, the cylindricality
Dottle pin 11 is between the colour element 40 and the silicon island 21.From figure 1 it appears that the colour element 40 protrudes from
Institute is arranged in the plane relative to the transistor (TFT) array substrate 20 in the colored optical filtering substrates 10 in the colour element 40
The making height of the column dottle pin 11 can be reduced by stating column dottle pin 11, rationally be taken using structure with compressing production.
It should be mentioned that in general, being equipped with one layer of public electrode between the colour element 40 and the column dottle pin 11
50 (ITO) of layer.When i.e. the column dottle pin 11 is set in the colour element 40, the column dottle pin 11 and the common electrical
Pole layer 50 contacts.Similarly, when the locating part 30 is set on the colored optical filtering substrates 10, the locating part 30 also with institute
State the contact of common electrode layer 50.
A kind of embodiment is shown in that Fig. 2, the colour element 40 include at least red pixel 41, the green pixel 42 being spaced successively
With blue pixel 43, the red pixel 41, the green pixel 42 and the blue pixel 43 are alternatively arranged and the colour
On optical filtering substrate 10, and the cylindricality dottle pin 11 is set on the top surface of the blue pixel 43, because in the picture of three colors
In element, human eye is most sensitive to green light, most blunt to blue light.And the cylindricality dottle pin 11 is set to the blue pixel 43
On, the cylindricality dottle pin 11 can be reduced to minimum to the influence of the display effect of the TFT thin film transistor monitor 100.It can be with
Understand, in some embodiments, the colour element 40 can also include the pixel of other colors, such as white pixel, yellow pixel
Deng.These pixels are also required to be sequentially arranged at intervals with the red pixel 41, the green pixel 42 and the blue pixel 43
In on the colored optical filtering substrates 10.
Further, the silicon island 21 is arranged along orthogonal first direction 001 and second direction 002 in array-like,
The locating part 30 is set on the transistor (TFT) array substrate 20.The locating part 30 includes the first limited post 311 and second
Limited post 312, point row column on the first direction 001 with second limited post 312 of first limited post 311
The both sides of dottle pin 11.The locating part 30 completes the limit to the column dottle pin 11 on the first direction 001 as a result,
Action.Because the silicon island 21 is usually expressed as rectangle, rectangular two sides respectively with the first direction 001 and institute
It is parallel to state second direction 002.Therefore when the column dottle pin 11 is combined with the silicon island 21, the edge apart from the silicon island 21
Nearest direction is also parallel with the first direction 001 or the second direction 002.First limited post 311 and described the
Two limited posts 312 limit the displacement of the column dottle pin 11 on the first direction 001, it is ensured that the column dottle pin 11
It can not be detached from by minimum displacement and the combination of the silicon island 21.
Further, see that Fig. 3, the column dottle pin 11 divide for the first column dottle pin 111 and the second column dottle pin 112.Institute
It states the first column dottle pin 111 and the second column dottle pin 112 is respectively arranged in the different colour elements 40.Described
One limited post 311 coordinates with the first column dottle pin 111, to limit the first column dottle pin 111 along the first direction
001 end motion；Second limited post 312 and the second column dottle pin 312 coordinate, with limit second column every
Pad 112 is moved along the direction opposite with the first direction 001.Due to the first column dottle pin 111 and second column
Dottle pin 112 is respectively in the different colour elements 40, therefore corresponding first limited post 311 is limited with described second
Column 312 is also at the position of the different silicon island 21.This arrangement mode is compared with the arrangement mode of Fig. 1, the locating part
30 density is lower, and the deadening amount from the transistor (TFT) array substrate 20 through the light come is also accordingly reduced, is improved
The overall brightness of herein described TFT thin film transistor monitor 100 obtains better display effect.
It should be understood that the spacing distance between the first column dottle pin 111 and the second column dottle pin 112, or
It is described as the quantity for the colour element 40 being spaced between the first column dottle pin 111 and the second column dottle pin 112,
Namely the density of the column dottle pin 11, it can optionally determine.It is single described in some large-sized display products
The area of color pixel cells 40 is larger, preferably by between the first column dottle pin 111 and the second column dottle pin 112 away from
It is more secured in order to entirely be formed between the colored optical filtering substrates 10 and the transistor (TFT) array substrate 20 from setting smaller
Support.And in the viewing area product of some small sizes, the area smaller of the single color pixel cells 40, therefore can be with
The distance between the first column dottle pin 111 and the second column dottle pin 112 are suitably pulled open, or is described as suitably increasing institute
The number of the colour element 40 between the first column dottle pin 111 and the second column dottle pin 112 is stated, in order to avoid excessive institute
Stating column dottle pin 11 and the locating part 30 influences the display effect of the Thin Film Transistor-LCD 100.
On the other hand, in the second direction 002, see Fig. 4, be also that interval is set between the first column dottle pin 111
It sets.That is at least one colour element 40 is separated between two the first column dottle pins 111.With above-mentioned reason class
Seemingly, the spaced first column dottle pin 111 can also promote the thin film transistor (TFT) liquid in the second direction 002
The brightness of crystal display 100 and display effect.
It should be understood that in the second direction 002, the first column dottle pin 111 and the second column dottle pin
112 do not limit yet and are necessarily placed on silicon island 21 described in same row.The first column dottle pin 111 and the second column dottle pin
112 in the second direction 002 be in staggered state.Such setting can be to avoid colour element 40 described in same row
Brightness it is lower relative to 40 brightness of colour element described in adjacent entire row, cause visual partition to feel.
In the embodiment of fig. 2, the locating part 30 is set on the top surface 211 of the silicon island 21.The i.e. described limit
For the link position of position part 30 on the top surface 211, the contact surface between the column dottle pin 11 and the silicon island 21 is same
One plane.Setting has borrowed the structure that the silicon island 21 protrudes from 20 surface of the transistor (TFT) array substrate in this way, is making institute
The making height of the locating part 30 can be reduced when stating locating part 30, accelerate processing procedure.
Another embodiment is shown in that Fig. 5, the locating part 30 are set to the side of the silicon island 21.I.e. the locating part 30 with
The silicon island 21 is in the same plane.Such setting can account for the part of the top surface 211 to avoid the locating part 30
With improving success rate of the column dottle pin 11 when to box.
It should be understood that for herein described Thin Film Transistor-LCD 100, the locating part 30 is to be set to
On any position of the transistor (TFT) array substrate 20, i.e., the locating part 30 can also be set to the side wall of the silicon island 21
On.So on the one hand setting avoids occupancy of the locating part 30 to the top surface 211, on the other hand can be by the limit
Part 30, within the scope of sufficiently small, has preferable implementation result to the Bit andits control of the column dottle pin 11.
In the embodiment in fig 6, the locating part 30 is set on the colored optical filtering substrates 10.The locating part 30 wraps
Include the first limit pad 321 and second limit pad 322.Likewise, on the first direction 001, the first limit pad 321 with
The both sides of the second limit pad, 322 points of row silicon island 21 with limit the silicon island 21 along the first direction 001 and with
The displacement of 001 opposite direction of first direction.The column dottle pin 11 is limited relative to the silicon island 21 correspondingly, can also play
Displacement action.
Similar reason divides the silicon island 21 for the first silicon island 201 and the second silicon island 202,201 He of the first silicon island
Second silicon island 202 is different silicon island 21.First silicon island 201 and second silicon island 202 are along the first direction
001 is arranged in order, and the first limit pad 321 coordinates with first silicon island 201 to limit the column dottle pin 11 described
Displacement on first direction 001, the second limit pad 322 coordinate with second silicon island 202 to limit the column dottle pin
11 in the displacement with 001 opposite direction of the first direction.
For first silicon island 201, second silicon island 202, the first limit pad 321 and the second limit pad
322 arrangement mode in herein described Thin Film Transistor-LCD 100, with first limited post 311, described
Two limited posts 312, the first column dottle pin 111 are similar with the arrangement mode thinking of the second column dottle pin 112.Above-mentioned
Column dottle pin 11 take along the first direction 001, the second direction 002 take it is spaced in the case of, described
One limit pad 321 and it is described second limit pad 322 be also spaced apart with the setting of the column dottle pin 11 and in the colour
On optical filtering substrate 10.And first silicon island 201 and second silicon island 202 are not deliberately arranged, they belong to the silicon
Island 21, only when the first limit pad 321 is matched with a certain silicon island 21 and is in contact, the silicon island 21 is just chosen
It is set to first silicon island 201.It is in contact likewise, being matched with a certain silicon island 21 in the second limit pad 322
When, the silicon island 21 is just chosen to be second silicon island 202.
It should be understood that when the locating part 30 is set on the colored optical filtering substrates 10, the locating part 30
The top surface of the colour element 40, the oblique shoulder of the colour element 40 or two adjacent colour elements can be equally set to
Position between 40, the present invention are not particularly limited this.As long as the locating part 30 can support the column dottle pin 11, prevent
Only the column dottle pin 11 and the top surface 211 of the silicon island 21 are detached from, you can to realize the claimed scheme of the application
Technique effect.For the embodiment that some described locating parts 30 are set on the top surface of the colour element 40, due to
The column dottle pin 11 has elasticity, in the colored optical filtering substrates 10 and the transistor (TFT) array substrate 20 to box after the completion of institute
Stating column dottle pin 11 can be by compressive deformation, and the locating part 30 then keeps height freely.The locating part 30 is set to institute
When stating on colored optical filtering substrates 10, the locating part 30 can be contour with the column dottle pin 11 under natural conditions.And because
It is also that photoresist is made by the column dottle pin 11, the locating part 30 can use same light shield with the column dottle pin 11
Prepared by process completes.The preparation time of the locating part 30 is greatly had compressed in this way.
A kind of embodiment is shown in Fig. 7 and Fig. 8, and in the second direction 002, the locating part 30 also uses and described first
Identical setting on direction 001, to limit the column dottle pin 11 in the second direction 002 relative to the silicon island 21
Position.See Fig. 7, in the second direction 002, the locating part 30 divides for third limited post 313 and the 4th limited post
314, the third limited post 313 and the 4th limited post 314 divide the both sides for arranging the column dottle pin 11, with the column
Dottle pin 11 coordinates, to realize the column dottle pin 11 and relative displacement of the silicon island 21 in the second direction 002.
Alternatively, as shown in figure 8, the locating part 30 is set on the colored optical filtering substrates 10, the locating part 30 divides
Pad 323 and the 4th is limited for third and limits pad 324, and the third limit pad 323 and the 4th limit pad 324 are described second
Divide the both sides for arranging the silicon island 21 on direction 002, coordinates with the silicon island 21, to realize the column dottle pin 11 and the silicon
Relative displacement of the island 21 in the second direction 002.
It should be understood that the locating part 30 on the first direction 001 and locating part in this second direction 30,
It can be set to a pair of mutually matched silicon island 21 and 11 position of column dottle pin.
It should be understood that setting of the column dottle pin 11 in the second direction 002, similarly may be used interval
The method of setting.And the third limited post 313, the 4th limited post 314, the third limit pad 323 and the described 4th
The setting method for limiting pad 324 is also limited with first limited post 311 above-mentioned, second limited post 312, described first
Pad 321 is similar with the second limit setting method of pad 322.The application does not do repeated description herein.
Distribution setting of the locating part 30 on the first direction 001, with the locating part 30 in the second party
It can separate and carry out to the distribution setting on 002, can also be carried out at the same time.It should be understood that in order to realize preferably limit effect
Fruit preferably uses on the first direction 001 and the second direction 002 while being arranged the embodiment of the locating part 30, with
Avoid occurring the Mura of left and right directions and the Mura of upper and lower directions on the Thin Film Transistor-LCD 100 simultaneously.
Embodiments described above does not constitute the restriction to the technical solution protection domain.It is any in above-mentioned implementation
Modifications, equivalent substitutions and improvements etc., should be included in the protection model of the technical solution made by within the spirit and principle of mode
Within enclosing.
Claims (10)
1. a kind of Thin Film Transistor-LCD, which is characterized in that including the colored optical filtering substrates and transistor being oppositely arranged
Array substrate is formed with array-like silicon island on the transistor (TFT) array substrate, and the colored optical filtering substrates are equipped with and the silicon island
Top surface coordinates to keep the cylindricality dottle pin of distance between the colored optical filtering substrates and the transistor (TFT) array substrate, the colour
Locating part is additionally provided between optical filtering substrate and the transistor (TFT) array substrate, the locating part provides a confined planes, when the limit
When position part is set on the colored optical filtering substrates, the confined planes and the side wall of the silicon island coordinate to limit the silicon island phase
Displacement for the colored optical filtering substrates；When the locating part is set on the transistor (TFT) array substrate, the limit
The side wall of face and the cylindricality dottle pin coordinates to limit the displacement of the opposite transistor (TFT) array substrate of the cylindricality dottle pin.
2. Thin Film Transistor-LCD as described in claim 1, which is characterized in that when the locating part is set to the coloured silk
When on color optical filtering substrate, projection of the confined planes on the side wall of the silicon island is contained within the side wall of the silicon island；When
When the locating part is set on the transistor (TFT) array substrate, projection of the column dottle pin on the confined planes is contained in
Within the confined planes.
3. Thin Film Transistor-LCD as described in claim 1, which is characterized in that the colored optical filtering substrates are in face institute
The face for stating silicon island is equipped with colour element corresponding with the silicon island position, each one described silicon of the colour element face
Island, the cylindricality dottle pin is between the colour element and the silicon island.
4. Thin Film Transistor-LCD as claimed in claim 2, which is characterized in that the silicon island is along orthogonal first
Direction and second direction are arranged in array-like, and the locating part is set on the transistor (TFT) array substrate, the locating part packet
The first limited post and the second limited post are included, first limited post divides row institute in said first direction with second limited post
State the both sides of column dottle pin.
5. Thin Film Transistor-LCD as claimed in claim 4, which is characterized in that the column dottle pin is divided into the first column
Dottle pin and the second column dottle pin, the first column dottle pin and the second column dottle pin are respectively arranged at the different colours
In pixel, first limited post coordinates with the first column dottle pin, second limited post and the second column dottle pin
Cooperation.
6. Thin Film Transistor-LCD as claimed in claim 4, which is characterized in that the locating part is set to the silicon island
Top surface.
7. Thin Film Transistor-LCD as claimed in claim 2, which is characterized in that the silicon island is along orthogonal first
Direction and second direction are arranged in array-like, and the locating part is set on the colored optical filtering substrates, and the locating part includes
First limit pad and the second limit are padded, and the first limit pad divides with the second limit pad described in row in said first direction
The both sides of silicon island.
8. Thin Film Transistor-LCD as claimed in claim 7, which is characterized in that the silicon island is divided into the first silicon island and
Two silicon island, first silicon island and second silicon island are arranged along the first direction, the first limit pad and described first
Silicon island coordinates, and the second limit pad coordinates with second silicon island.
9. Thin Film Transistor-LCD as claimed in claim 5, which is characterized in that the locating part is set to the colour
The top surface of pixel.
10. the Thin Film Transistor-LCD as described in any one of claim 5~9, which is characterized in that the locating part is in institute
State the both sides also divided in second direction and arrange the column dottle pin or the silicon island.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810241364.7A CN108279538A (en) | 2018-03-22 | 2018-03-22 | Thin Film Transistor-LCD |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810241364.7A CN108279538A (en) | 2018-03-22 | 2018-03-22 | Thin Film Transistor-LCD |
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| CN108279538A true CN108279538A (en) | 2018-07-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810241364.7A Pending CN108279538A (en) | 2018-03-22 | 2018-03-22 | Thin Film Transistor-LCD |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109164644A (en) * | 2018-08-15 | 2019-01-08 | 深圳市华星光电技术有限公司 | Liquid crystal display panel |
| CN113703229A (en) * | 2021-07-30 | 2021-11-26 | 惠科股份有限公司 | Display panel and display device |
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| US20090231536A1 (en) * | 2006-08-31 | 2009-09-17 | Chunghwa Picture Tubes, Ltd. | Liquid crystal display panel and fabricating method thereof |
| CN106226959A (en) * | 2016-09-27 | 2016-12-14 | 深圳市华星光电技术有限公司 | Liquid crystal panel and liquid crystal display |
| CN207020430U (en) * | 2017-10-26 | 2018-02-16 | 深圳市华星光电半导体显示技术有限公司 | A kind of liquid crystal display panel and liquid crystal display device for curved-surface display |
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| US20090231536A1 (en) * | 2006-08-31 | 2009-09-17 | Chunghwa Picture Tubes, Ltd. | Liquid crystal display panel and fabricating method thereof |
| CN106226959A (en) * | 2016-09-27 | 2016-12-14 | 深圳市华星光电技术有限公司 | Liquid crystal panel and liquid crystal display |
| CN207020430U (en) * | 2017-10-26 | 2018-02-16 | 深圳市华星光电半导体显示技术有限公司 | A kind of liquid crystal display panel and liquid crystal display device for curved-surface display |
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| CN109164644A (en) * | 2018-08-15 | 2019-01-08 | 深圳市华星光电技术有限公司 | Liquid crystal display panel |
| CN113703229A (en) * | 2021-07-30 | 2021-11-26 | 惠科股份有限公司 | Display panel and display device |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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Application publication date: 20180713 |