CN108270406A - Power synthesis circuit based on on-chip transformer - Google Patents
Power synthesis circuit based on on-chip transformer Download PDFInfo
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- CN108270406A CN108270406A CN201810071114.3A CN201810071114A CN108270406A CN 108270406 A CN108270406 A CN 108270406A CN 201810071114 A CN201810071114 A CN 201810071114A CN 108270406 A CN108270406 A CN 108270406A
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- 239000002184 metal Substances 0.000 claims abstract description 187
- 229910052751 metal Inorganic materials 0.000 claims abstract description 187
- 230000008878 coupling Effects 0.000 claims abstract description 14
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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Abstract
The invention discloses a kind of power synthesis circuit based on on-chip transformer, including：The on-chip transformer being made of multiple primary coils and a secondary coil；Secondary coil surrounds the annular circle formed by the planar metal line of multiple same layers and forms, each primary coil also surrounds the annular circle formed by the planar metal line of corresponding same layer respectively and forms, and the quantity of the annular circle of each primary coil is all respectively smaller than the quantity of the annular circle of secondary coil；The metal level of the planar metal line of the annular circle of each primary coil is higher or lower than the metal layer of the planar metal line of the annular circle of corresponding secondary coil；In the longitudinal direction, the planar metal line of the annular circle of the planar metal line and corresponding secondary coil of the annular circle of each primary coil is perfectly aligned, and perfectly aligned structure increases the coupling regime of primary coil and secondary coil.The present invention can reduce the area of circuit, improve the coupling factor between primary coil and secondary coil, improve the efficiency of transformer.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit, more particularly to a kind of power combing electricity based on on-chip transformer
Road.
Background technology
As shown in Figure 1, it is the circuit diagram of the power synthesis circuit of on-chip transformer；On-chip transformer 101 in Fig. 1 includes
2 primary coils and a secondary coil Ls, two primary coils are marked respectively with Lp101 and Lp102, primary coil Lp101
It is identical with the parameter of Lp102 and and secondary coil Ls turn ratio all be 1:2, therefore on-chip transformer shown in FIG. 1 101 multiplies for 2
1:2 i.e. 2 × 1:2 transformer；The input section of primary coil Lp101 and Lp102 connect respectively is put by power discharge device (PA) 102
Power input signal after big, offer power is defeated after two power input signals carry out power combing by on-chip transformer 101
Go out signal, the output terminal of secondary coil Ls is connected with load RL in Fig. 1.
As shown in Figure 2 A, it is the domain of the existing power synthesis circuit based on on-chip transformer；Fig. 2 B are the first of Fig. 2A
Exploded view；Fig. 2 C are the second exploded views of Fig. 2A；The domain of corresponding on-chip transformer 101 in Fig. 1 is mainly illustrated in Fig. 2A,
The annular circle of 201 articulamentum of coil 2 forms the secondary coil Ls shown in Fig. 1, and there are two label P3+ and P3- is corresponding defeated for tool
Exit port；The annular circle of 202 articulamentum of coil 1 forms the primary coil Lp101 shown in Fig. 1, tool there are two label P1+ and
The corresponding output ports of P1-；The annular circle of 203 articulamentum of coil 1 forms the primary coil Lp102 shown in Fig. 1, and there are two tools
Mark the corresponding output ports of P2+ and P2-.As can be seen that the dominant plane metal wire between coil 201,202 and 203
It is all located on same layer metal, and lateral alternate between each planar metal line on same plane, dotted line frame 204 and 205
There are the connecting lines between the Internal and external cycle of coil in corresponding region, and there are through-holes and formation in the region of dotted line frame 204 and 205
In the planar metal line on bottom metal layer.
By Fig. 2A, the size that coil 201 and coil 202 and 203 enclose region not fully overlaps, and has due to coil
The transversely arranged caused Area distortion for enclosing region between planar metal line, coil 201 and coil 202 and 203 are enclosed
The region that region does not coincide can bring certain magnetic flux to reveal, this can not only cause the area of circuit to increase, but also can drop
Coupling factor between low secondary coil Ls and primary coil Lp101 and Lp102.
Invention content
The technical problems to be solved by the invention are to provide a kind of power synthesis circuit based on on-chip transformer, can reduce
The area of circuit improves the coupling factor between primary coil and secondary coil, improves the efficiency of transformer.
In order to solve the above technical problems, the power synthesis circuit provided by the invention based on on-chip transformer includes：
The on-chip transformer being made of multiple primary coils and a secondary coil, each primary coil input one respectively
A power input signal, each power input signal of multiple primary coils are synthetically formed a work(in the secondary coil
Rate output signal.
The secondary coil is formed in semi-conductive substrate and in planar spiral structures, and the secondary coil includes the first letter
Number output terminal and second signal output terminal, the secondary coil surround the annular circle formed by the planar metal line of multiple same layers
Composition, the internal diameter of the annular circle of the secondary coil are reduced successively, and each annular circle of the secondary coil is provided with corresponding two
A subordinate's tie point or two higher level's tie points.
First signal output end and the second signal output terminal by the secondary coil outermost annular circle
Two mutually disconnect higher level's tie points composition.
The connection structure of each annular circle of the secondary coil is：When prime annular circle have subordinate's annular circle when, when
The Liang Ge subordinates tie point of prime annular circle disconnects, and two higher level's tie points of subordinate's annular circle disconnect, when prime annular circle
First subordinate's tie point connects second higher level's tie point of subordinate's annular circle by the planar metal line of same layer, when prime ring
Second subordinate's tie point of shape circle connects cascade on the first of subordinate's annular circle by through-hole with the planar metal line of adjacent layer
Contact；When prime annular circle do not have subordinate's annular circle when, when the Liang Ge subordinates tie point of prime annular circle links together.
Each primary coil also surrounds the annular circle formed by the planar metal line of corresponding same layer respectively and forms, respectively
The quantity of the annular circle of the primary coil is all respectively smaller than the quantity of the annular circle of the secondary coil；Each primary coil
Annular circle planar metal line metal level higher or lower than the corresponding secondary coil annular circle planar metal
The metal layer of line.
In the longitudinal direction, the annular of the planar metal line of the annular circle of each primary coil and the corresponding secondary coil
The planar metal line of circle is perfectly aligned, and perfectly aligned structure increases the coupling regime of the primary coil and the secondary coil
Add；There is crossover region between the annular circle of each primary coil of same layer, in crossover region, one of them described primary line
Planar metal line between the annular circle of the Internal and external cycle of circle by same layer is directly connected to, inside and outside another described primary coil
It is connected between the annular circle of circle by through-hole with the planar metal line of adjacent layer.
A further improvement is that the number of the primary coil is 2.
A further improvement is that the quantity of the annular circle of the secondary coil is 2, the annular circle of each primary coil
Quantity be 1.
A further improvement is that the shape that the annular circle of the secondary coil surrounds is rectangle.
A further improvement is that the outermost annular circle of the secondary coil is included under two higher level's tie points and two
Grade tie point, the innermost annular circle of the secondary coil include two higher level's tie points；The outermost of the secondary coil
Each higher level's tie point of annular circle be arranged in a line of rectangle and each subordinate's tie point is arranged on another of rectangle
Bian Shang.
A further improvement is that the annular circle of each primary coil by half inner ring planar metal line and half it is outer
Planar metal wire loop is enclosed around formation, the plane of outer ring metal wire of the annular circle of each primary coil and the corresponding secondary wire
The half-turn alignment of the outermost annular circle of circle, the inner ring planar metal line of the annular circle of each primary coil and corresponding institute
State the half-turn alignment of the innermost annular circle of secondary coil.
A further improvement is that the annular circle of each primary coil includes a pair of of higher level's tie point, each primary line
A pair of of higher level's tie point of circle is used to be used as corresponding first power input signal end and the second power signal input terminal.
A further improvement is that a pair of of higher level's tie point of each primary coil is arranged on plane of outer ring metal wire correspondence
Rectangular edges on.
A further improvement is that the corresponding rectangular edges of a pair of of higher level's tie point of each primary coil and the secondary wire
First signal output end of circle is different with the rectangular edges of the second signal output terminal.
A further improvement is that the corresponding rectangular edges of a pair of of higher level's tie point of two primary coils are identical.
A further improvement is that a pair of of higher level's tie point of two primary coils is corresponding to the position of rectangular edges not
Together.
A further improvement is that the corresponding rectangular edges of a pair of of higher level's tie point of two primary coils are different.
A further improvement is that the on-chip transformer includes 3 layers of metal layer.
Each planar metal line of each annular circle of the secondary coil is located on third layer metal layer, in front stage annular circle
Link position at exist positioned at bottom second layer metal layer on part planar metal wire.
Each planar metal line of the annular circle of each primary coil is located on second layer metal layer, in each primary line
There is the part planar metal wire on the first layer metal layer of bottom in the crossover region of the annular circle of circle.
A further improvement is that the on-chip transformer includes 4 layers of metal layer.
Each planar metal line of each annular circle of the secondary coil is located on third layer metal layer, in front stage annular circle
Link position at exist positioned at bottom second layer metal layer on part planar metal wire.
Each planar metal line of the annular circle of each primary coil is located on second layer metal layer, in each primary line
In the presence of the part planar metal wire on the first layer metal layer of bottom and positioned at first in the crossover region of the annular circle of circle
Part planar metal wire on 0th layer of metal layer of layer metal layer bottom.
A further improvement is that each power input signal is connected to each primary after amplifying by power amplifier
The power signal input terminal of coil.
The present invention has done especially the structure of the corresponding planar metal line of the primary coil and secondary coil of on-chip transformer
Setting, by increase metal level and by through-hole setting come realize overlapping region metal wire connection, can realize
The corresponding subject plane metal wire of secondary coil is all placed on to the subject plane on same layer metal layer and by primary coil
Metal wire, which is all placed on other layers of metal layer, to be such as placed on adjacent last layer or next layer, passes through upper lower metal layer
Longitudinally disposed energy is so that the plane gold of the annular circle of the planar metal line and corresponding secondary coil of the annular circle of each primary coil
Belong to line it is perfectly aligned, in this way, the area shared by entire on-chip transformer can not only be reduced, moreover it is possible at the same increase primary coil and time
The coupling regime of grade coil, so as to improve the coupling factor between primary coil and secondary coil, improves the efficiency of transformer.
Description of the drawings
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments：
Fig. 1 is the circuit diagram of the power synthesis circuit based on on-chip transformer；
Fig. 2A is the domain of the existing power synthesis circuit based on on-chip transformer；
Fig. 2 B are the first exploded views of Fig. 2A；
Fig. 2 C are the second exploded views of Fig. 2A；
Fig. 3 A are the domains of power synthesis circuit of the first embodiment of the invention based on on-chip transformer；
Fig. 3 B are the first exploded views of Fig. 3 A；
Fig. 3 C are the second exploded views of Fig. 3 A；
Fig. 4 A are the three-dimensional structure diagrams of the corresponding domains of Fig. 3 A；
Fig. 4 B are the first exploded views of Fig. 4 A；
Fig. 4 C are the second exploded views of Fig. 4 A；
Fig. 5 A are the domains of power synthesis circuit of the second embodiment of the invention based on on-chip transformer；
Fig. 5 B are the first exploded views of Fig. 5 A；
Fig. 5 C are the second exploded views of Fig. 5 A；
Fig. 6 A are the three-dimensional structure diagrams of the corresponding domains of Fig. 5 A；
Fig. 6 B are the first exploded views of Fig. 6 A；
Fig. 6 C are the second exploded views of Fig. 6 A；
Fig. 7 is the transformer efficiency of second embodiment of the invention and the simulation curve of frequency.
Specific embodiment
As shown in Figure 3A, it is the domain of power synthesis circuit of the first embodiment of the invention based on on-chip transformer 101；Figure
3B is the first exploded view of Fig. 3 A；Fig. 3 C are the second exploded views of Fig. 3 A；Fig. 4 A are the three-dimensional structure diagrams of the corresponding domains of Fig. 3 A；
Fig. 4 B are the first exploded views of Fig. 4 A；Fig. 4 C are the second exploded views of Fig. 4 A；First embodiment of the invention is based on on-chip transformer
Shown in the 101 corresponding circuit diagram of power synthesis circuit please refers to Fig.1, on-chip transformer 101 is 2 × 1:2 structures, each work(
Rate input signal is connected to each primary coil Lp101 and Lp102 power signal after amplifying by power amplifier 102 is defeated
Enter end, two power input signals provide power output signal after carrying out power combing by on-chip transformer 101, in Fig. 1 time
The output terminal of grade coil Ls is connected with load RL.
Power synthesis circuit of the first embodiment of the invention based on on-chip transformer 101 includes：
The on-chip transformer 101 being made of multiple primary coils and a secondary coil 301；Each primary coil difference
A power input signal is inputted, each power input signal of multiple primary coils synthesizes in the secondary coil 301
Form a power output signal.
The secondary coil 301 is formed in semi-conductive substrate and in planar spiral structures, and the secondary coil 301 is by more
The planar metal line of a same layer surrounds the annular circle composition formed.The internal diameter of the annular circle of the secondary coil 301 subtracts successively
Few, each annular circle of the secondary coil 301 is provided with corresponding Liang Ge subordinates tie point or two higher level's tie points.
The first signal output end S+ and the second signal output terminal S- are by the outermost of the secondary coil 301
Higher level's tie point composition that two of annular circle mutually disconnect.
The connection structure of each annular circle of the secondary coil 301 is：When prime annular circle have subordinate's annular circle when,
When the Liang Ge subordinates tie point of prime annular circle disconnects, two higher level's tie points of subordinate's annular circle disconnect, when prime annular circle
First subordinate's tie point second higher level's tie point of subordinate's annular circle is connected by the planar metal line of same layer, work as prime
Second subordinate's tie point of annular circle connects the first higher level of subordinate's annular circle by through-hole with the planar metal line of adjacent layer
Tie point, the planar metal line of adjacent layer can be with for adjacent last layer or next layer, or adjacent upper two layers or
It lower two layers, needs to be configured according to actual conditions；When prime annular circle do not have subordinate's annular circle when, when prime annular circle
Liang Ge subordinates tie point link together.That is, when prime annular circle has subordinate's annular circle, when prime annular circle will
Two higher level's tie points of subordinate's annular circle are connected by Liang Ge subordinates tie point, therefore there are crossover region, in order to avoid overlapping
Area's short circuit increases the connection structure of the planar metal line of through-hole and adjacent layer.
Each primary coil also surrounds the annular circle formed by the planar metal line of corresponding same layer respectively and forms, respectively
The quantity of the annular circle of the primary coil is all respectively smaller than the quantity of the annular circle of the secondary coil 301；Each primary
The metal level of the planar metal line of the annular circle of coil is flat higher or lower than the annular circle of the corresponding secondary coil 301
The metal level of the planar metal line of the annular circle of the primary coil is also placed on described time by the metal layer of face metal wire
Grade coil 301 annular circle planar metal line metal layer on or below can, can be set according to actual needs
It puts, the plane gold of the annular circle of each primary coil of subsequent descriptions is can guarantee by using the setting of different metal levels
The planar metal line for belonging to the annular circle of line and the corresponding secondary coil 301 is perfectly aligned.
In the longitudinal direction, the planar metal line of the annular circle of each primary coil and the corresponding secondary coil 301
The planar metal line of annular circle is perfectly aligned, and perfectly aligned structure makes the coupling of the primary coil and the secondary coil 301
Closing region increases；There is crossover region, in crossover region, one of institute between the annular circle of each primary coil of same layer
State be directly connected to by the planar metal line of same layer between the annular circle of the Internal and external cycle of primary coil, another described primary line
The adjacent layer being connected with through-hole is connected with the planar metal line of adjacent layer by through-hole between the annular circle of the Internal and external cycle of circle
Planar metal line can be with for adjacent last layer or next layer, or adjacent upper two layers or two layers lower need basis
Actual conditions are configured.
In first embodiment of the invention, primary coil is marked including two with label 302 and 303 respectively in Fig. 3 A, and point
Primary coil Lp101 and Lp102 that Dui Yingyu be in Fig. 1；Secondary coil 301 then corresponds to the secondary coil Ls in Fig. 1.This hair
In bright first embodiment, power output signal and power input signal are all differential signal, corresponding port all there are two, such as work(
The port of rate output signal is respectively S+ and S- i.e. follow-up first signal output end S+ and second signal output terminal S-, primary coil
The port of 302 power input signal is respectively P1+ and P1-, and the port of the power input signal of primary coil 303 is respectively P2
+ and P2-.
The quantity of the annular circle of the secondary coil 301 is 2, and the quantity of the annular circle of each primary coil is 1.
The shape that the annular circle of the secondary coil 301 surrounds is rectangle.
The outermost annular circle of the secondary coil 301 includes two higher level's tie points and Liang Ge subordinates tie point, institute
The outermost annular circle for stating secondary coil 301 includes two higher level's tie points corresponding to the first signal output end S+ and institute
State second signal output terminal S-；The outermost Liang Ge subordinates tie point of the secondary coil 301 is located at the position of dotted line money 304
Place.The innermost annular circle of the secondary coil 301 includes two higher level's tie points.The most inner side of the secondary coil 301
Two higher level's tie points of annular circle be located at the position of dotted line money 304.The outermost annular circle of the secondary coil 301
Each higher level's tie point be arranged in a line of rectangle and each subordinate's tie point is arranged in the another a line of rectangle, Fig. 3 A
In two sides be rectangle two parallel edges.
The annular circle of each primary coil is by the inner ring planar metal line of half and the plane of outer ring wire loop of half
Around formation, the outermost of the plane of outer ring metal wire of the annular circle of each primary coil and the corresponding secondary coil 301
Annular circle half-turn alignment, the inner ring planar metal line of the annular circle of each primary coil and the corresponding secondary coil
The half-turn alignment of 301 innermost annular circle.It in detail can be with the version of the primary coil 302 and 303 shown in reference chart 3B
Figure.
The annular circle of each primary coil includes a pair of of higher level's tie point, a pair of of higher level connection of each primary coil
Point is used to be used as corresponding first power input signal end and the second power signal input terminal.First power input signal end and
Two power signal input terminals correspond to the port P1+ and P1- of the power input signal of primary coil 302 and primary coil 303
The port P2+ and P2- of power input signal.
A pair of of higher level's tie point of each primary coil is arranged in the corresponding rectangular edges of plane of outer ring metal wire.
The corresponding rectangular edges of a pair of of higher level's tie point of each primary coil and described the first of the secondary coil 301
The rectangular edges of the signal output end S+ and second signal output terminal S- are different.A pair of of higher level connection of two primary coils
The corresponding rectangular edges of point are identical.A pair of of higher level's tie point of two primary coils is different in the position of corresponding rectangular edges.By
It is found that higher level's tie point of the primary coil 302 and 303 is all set in then 304 corresponding rectangular edges of dotted line frame shown in Fig. 3 A.
The on-chip transformer 101 includes 4 layers of metal layer.
Structure between metal layer please refers to Fig.4 the corresponding stereograms of A to Fig. 4 C, each annular of the secondary coil 301
Each planar metal line of circle is located on third layer metal layer, there is the positioned at bottom at the link position of front stage annular circle
Part planar metal wire on two layers of metal layer.By Fig. 4 C it is found that there are the secondary wires in 304 corresponding position of dotted line frame
It needs to carry out the part of interconnection between the annular circle of 2 of circle 301, wherein, a planar metal line connected by same layer
301a realizes that another connection is realized by the planar metal line 301b of through-hole 3061 and bottom, passes through planar metal line
301a and 301b realizes the annular outer ring of circle and the interconnection of inner round portion.
Each planar metal line of the annular circle of each primary coil is located on second layer metal layer, in each primary line
In the presence of the part planar metal wire on the first layer metal layer of bottom and positioned at first in the crossover region of the annular circle of circle
Part planar metal wire on 0th layer of metal layer of layer metal layer bottom.By Fig. 4 B it is found that the primary coil 302 and 303 all
On second layer metal layer, need to realize interconnection at 304 and 305 corresponding position of dotted line frame.In dotted line frame 304
In, the primary coil 302 is realized by the planar metal line 302a on through-hole 3062 and first layer metal layer at crossover location
Connection；In dotted line frame 305, the primary coil 302 is realized by the planar metal line 302b on second layer metal layer and handed over
Vent puts the connection at place.In dotted line frame 304, the primary coil 303 passes through on through-hole 3062 and 3063 and the 0th layer of metal layer
Planar metal line 303a realize crossover location at connection；In dotted line frame 305, the primary coil 303 passes through through-hole
3062 and first layer metal layer on planar metal line 303b realize crossover location at connection.As shown in Fig. 4 A it is found that in void
At wire frame 304, there are 4 layers of metals, need three layers of through-hole, respectively through-hole 3061,3062 and 3063 in the longitudinal direction.
Compare shown in Fig. 2A and Fig. 3 A it is found that in the horizontal, the primary coil and secondary coil of first embodiment of the invention
Between be completely superposed, area can not only be saved, moreover it is possible to increase the coupling between primary coil and secondary coil and reduce magnetic flux
Leakage；On counterpiece for structure, since all original papers in circuit all integrate on the same chip, therefore it can be dropped after reducing area
The cost of low on piece fabric chip；And increase the coupling between primary coil and secondary coil and reduce magnetic flux leakage then can
Improve the efficiency of transformer.
As shown in Figure 5A, it is the domain of power synthesis circuit of the second embodiment of the invention based on on-chip transformer 101；Figure
5B is the first exploded view of Fig. 5 A；Fig. 5 C are the second exploded views of Fig. 5 A；Fig. 6 A are the three-dimensional structure diagrams of the corresponding domains of Fig. 5 A；
Fig. 6 B are the first exploded views of Fig. 6 A；Fig. 6 C are the second exploded views of Fig. 6 A；Second embodiment of the invention is based on on-chip transformer
Shown in the 101 corresponding circuit diagram of power synthesis circuit please refers to Fig.1, on-chip transformer 101 is 2 × 1:2 structures, each work(
Rate input signal is connected to each primary coil Lp101 and Lp102 power signal after amplifying by power amplifier 102 is defeated
Enter end, two power input signals provide power output signal after carrying out power combing by on-chip transformer 101, in Fig. 1 time
The output terminal of grade coil Ls is connected with load RL.
Power synthesis circuit of the second embodiment of the invention based on on-chip transformer 101 includes：
The on-chip transformer 101 being made of multiple primary coils and a secondary coil 401；Each primary coil difference
A power input signal is inputted, each power input signal of multiple primary coils synthesizes in the secondary coil 401
Form a power output signal.
The secondary coil 401 is formed in semi-conductive substrate and in planar spiral structures, and the secondary coil 401 is by more
The planar metal line of a same layer surrounds the annular circle composition formed.The internal diameter of the annular circle of the secondary coil 401 subtracts successively
Few, each annular circle of the secondary coil 401 is provided with corresponding Liang Ge subordinates tie point or two higher level's tie points.
The first signal output end S+ and the second signal output terminal S- are by the outermost of the secondary coil 401
Higher level's tie point composition that two of annular circle mutually disconnect.
The connection structure of each annular circle of the secondary coil 401 is：When prime annular circle have subordinate's annular circle when,
When the Liang Ge subordinates tie point of prime annular circle disconnects, two higher level's tie points of subordinate's annular circle disconnect, when prime annular circle
First subordinate's tie point second higher level's tie point of subordinate's annular circle is connected by the planar metal line of same layer, work as prime
Second subordinate's tie point of annular circle connects cascade on the first of subordinate's annular circle by through-hole with next layer plane metal wire
Contact；When prime annular circle do not have subordinate's annular circle when, when the Liang Ge subordinates tie point of prime annular circle links together.
Each primary coil also surrounds the annular circle formed by the planar metal line of corresponding same layer respectively and forms, respectively
The quantity of the annular circle of the primary coil is all respectively smaller than the quantity of the annular circle of the secondary coil 401；Each primary
The metal of the planar metal line of the annular circle of coil is hierarchically below the planar metal of the annular circle of the corresponding secondary coil 401
The metal layer of line.
In the longitudinal direction, the planar metal line of the annular circle of each primary coil and the corresponding secondary coil 401
The planar metal line of annular circle is perfectly aligned, and perfectly aligned structure makes the coupling of the primary coil and the secondary coil 401
Closing region increases；There is crossover region, in crossover region, one of institute between the annular circle of each primary coil of same layer
State be directly connected to by the planar metal line of same layer between the annular circle of the Internal and external cycle of primary coil, another described primary line
It is connected between the annular circle of the Internal and external cycle of circle by the planar metal line of one layer of through-hole and bottom.
In second embodiment of the invention, primary coil is marked including two with label 402 and 403 respectively in Fig. 5 A, and point
Primary coil Lp101 and Lp102 that Dui Yingyu be in Fig. 1；Secondary coil 401 then corresponds to the secondary coil Ls in Fig. 1.This hair
In bright second embodiment, power output signal and power input signal are all differential signal, corresponding port all there are two, such as work(
The port of rate output signal is respectively S+ and S- i.e. follow-up first signal output end S+ and second signal output terminal S-, primary coil
The port of 402 power input signal is respectively P1+ and P1-, and the port of the power input signal of primary coil 403 is respectively P2
+ and P2-.
The quantity of the annular circle of the secondary coil 401 is 2, and the quantity of the annular circle of each primary coil is 1.
The shape that the annular circle of the secondary coil 401 surrounds is rectangle.
The outermost annular circle of the secondary coil 401 includes two higher level's tie points and Liang Ge subordinates tie point, institute
The outermost annular circle for stating secondary coil 401 includes two higher level's tie points corresponding to the first signal output end S+ and institute
State second signal output terminal S-；The outermost Liang Ge subordinates tie point of the secondary coil 401 is located at the position of dotted line money 404
Place.The innermost annular circle of the secondary coil 401 includes two higher level's tie points.The most inner side of the secondary coil 401
Two higher level's tie points of annular circle be located at the position of dotted line money 404.The outermost annular circle of the secondary coil 401
Each higher level's tie point be arranged in a line of rectangle and each subordinate's tie point is arranged in the another a line of rectangle, Fig. 5 A
In two sides be rectangle two parallel edges.
The annular circle of each primary coil is by the inner ring planar metal line of half and the plane of outer ring wire loop of half
Around formation, the outermost of the plane of outer ring metal wire of the annular circle of each primary coil and the corresponding secondary coil 401
Annular circle half-turn alignment, the inner ring planar metal line of the annular circle of each primary coil and the corresponding secondary coil
The half-turn alignment of 401 innermost annular circle.It in detail can be with the version of the primary coil 402 and 403 shown in reference chart 5B
Figure.
The annular circle of each primary coil includes a pair of of higher level's tie point, a pair of of higher level connection of each primary coil
Point is used to be used as corresponding first power input signal end and the second power signal input terminal.First power input signal end and
Two power signal input terminals correspond to the port P1+ and P1- of the power input signal of primary coil 402 and primary coil 403
The port P2+ and P2- of power input signal.
A pair of of higher level's tie point of each primary coil is arranged in the corresponding rectangular edges of plane of outer ring metal wire.
The corresponding rectangular edges of a pair of of higher level's tie point of each primary coil and described the first of the secondary coil 401
The rectangular edges of the signal output end S+ and second signal output terminal S- are different.A pair of of higher level connection of two primary coils
The corresponding rectangular edges of point are different.It is found that higher level's tie point of the primary coil 402, that is, port P1+ and P1- is set as shown in Fig. 5 A
It puts in then 404 corresponding rectangular edges of dotted line frame；It is found that higher level's tie point, that is, port of the primary coil 403 as shown in Fig. 5 B
P2+ and P2- settings are then in 406 corresponding rectangular edges of dotted line frame.
The on-chip transformer 101 includes 3 layers of metal layer.
Structure between metal layer please refers to the corresponding stereograms of Fig. 6 A to Fig. 6 C, each annular of the secondary coil 401
Each planar metal line of circle is located on third layer metal layer, there is the positioned at bottom at the link position of front stage annular circle
Part planar metal wire on two layers of metal layer.By Fig. 6 C it is found that there are the secondary wires in 404 corresponding position of dotted line frame
It needs to carry out the part of interconnection between the annular circle of 2 of circle 401, wherein, a planar metal line connected by same layer
401a realizes that another connection is realized by the planar metal line 401b of through-hole 3071 and bottom, passes through planar metal line
401a and 401b realizes the annular outer ring of circle and the interconnection of inner round portion.
Each planar metal line of the annular circle of each primary coil is located on second layer metal layer, in each primary line
There is the part planar metal wire on the first layer metal layer of bottom in the crossover region of the annular circle of circle.By Fig. 6 B it is found that
The primary coil 402 and 403 is all located on second layer metal layer, needs to realize at 404 and 405 corresponding position of dotted line frame
Interconnection.In dotted line frame 404, the primary coil 402 passes through the planar metal on through-hole 3072 and first layer metal layer
Line 402a realizes the connection at crossover location；In dotted line frame 405, the primary coil 402 passes through on second layer metal layer
Planar metal line 402b realizes the connection at crossover location.In dotted line frame 404, the primary coil 403 passes through through-hole 4072
The connection at crossover location is realized with the planar metal line 403a on first layer metal layer；In dotted line frame 405, the primary line
Circle 403 realizes the connection at crossover location by the planar metal line 403b on through-hole 4072 and first layer metal layer.By Fig. 6 A
It is shown it is found that at dotted line frame 404, there are 3 layers of metals, need two layers of through-hole, respectively through-hole 4071 and 4072 in the longitudinal direction.
Compare shown in Fig. 2A and Fig. 5 A it is found that in the horizontal, the primary coil and secondary coil of second embodiment of the invention
Between be completely superposed, area can not only be saved, moreover it is possible to increase the coupling between primary coil and secondary coil and reduce magnetic flux
Leakage；On counterpiece for structure, since all original papers in circuit all integrate on the same chip, therefore it can be dropped after reducing area
The cost of low on piece fabric chip；And increase the coupling between primary coil and secondary coil and reduce magnetic flux leakage then can
Improve the efficiency of transformer.
Table one
As shown in Table 1, it is that Fig. 2A, corresponding existing device and Fig. 5 A are corresponded under the power signal that plane is 1.8GHz
The comparison result that is emulated of second embodiment of the invention device, it can be seen that second embodiment of the invention device
Quality factor is improved；Wherein turn ratio is practical effective turn ratio, it can be seen that the reality of second embodiment of the invention
The turn ratio on border is also improved, and area is reduced, and mutual inductance is strengthened, and the coefficient of coup and transformer efficiency are all improved.
As shown in fig. 7, being the transformer efficiency of second embodiment of the invention and the simulation curve of frequency, curve 401 is
The transformer efficiency of second embodiment of the invention and the simulation curve of frequency；The corresponding existing devices of Fig. 2A are given in Fig. 7
Transformer efficiency and frequency simulation curve, that is, curve 402, it can be seen that small in various frequency conditions, the present invention second is real
The transformation device efficiency for applying example is all higher than existing device.
The present invention has been described in detail through specific embodiments, but these not form the limit to the present invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these also should
It is considered as protection scope of the present invention.
Claims (15)
1. a kind of power synthesis circuit based on on-chip transformer, which is characterized in that including：
The on-chip transformer being made of multiple primary coils and a secondary coil, each primary coil input a work(respectively
Rate input signal, it is defeated that each power input signals of multiple primary coils is synthetically formed a power in the secondary coil
Go out signal；
The secondary coil is formed in semi-conductive substrate and in planar spiral structures, and it is defeated that the secondary coil includes the first signal
Outlet and second signal output terminal, the secondary coil surround the annular circle group formed by the planar metal line of multiple same layers
Into the internal diameter of the annular circle of the secondary coil is reduced successively, and each annular circle of the secondary coil is provided with corresponding two
Subordinate's tie point or two higher level's tie points；
First signal output end and the second signal output terminal by the secondary coil outermost annular circle two
A higher level's tie point composition mutually disconnected；
The connection structure of each annular circle of the secondary coil is：When prime annular circle has subordinate's annular circle, work as prime
The Liang Ge subordinates tie point of annular circle disconnects, and two higher level's tie points of subordinate's annular circle disconnect, when the first of prime annular circle
A subordinate's tie point connects second higher level's tie point of subordinate's annular circle by the planar metal line of same layer, when prime annular circle
Second subordinate's tie point first higher level's tie point of subordinate's annular circle is connected with the planar metal line of adjacent layer by through-hole；
When prime annular circle do not have subordinate's annular circle when, when the Liang Ge subordinates tie point of prime annular circle links together；
Each primary coil also surrounds the annular circle formed by the planar metal line of corresponding same layer respectively and forms, each described
The quantity of the annular circle of primary coil is all respectively smaller than the quantity of the annular circle of the secondary coil；The ring of each primary coil
The metal level of the planar metal line of shape circle is higher or lower than the planar metal line of the annular circle of the corresponding secondary coil
Metal layer；
In the longitudinal direction, the annular circle of the planar metal line of the annular circle of each primary coil and the corresponding secondary coil
Planar metal line is perfectly aligned, and perfectly aligned structure increases the coupling regime of the primary coil and the secondary coil；
There is crossover region, in crossover region, one of them described primary coil between the annular circle of each primary coil of same layer
Internal and external cycle annular circle between be directly connected to by the planar metal line of same layer, the Internal and external cycle of another primary coil
Annular circle between connected by through-hole with the planar metal line of adjacent layer.
2. the power synthesis circuit based on on-chip transformer as described in claim 1, it is characterised in that：The primary coil
Number is 2.
3. the power synthesis circuit based on on-chip transformer as claimed in claim 2, it is characterised in that：The secondary coil
The quantity of annular circle is 2, and the quantity of the annular circle of each primary coil is 1.
4. the power synthesis circuit based on on-chip transformer as claimed in claim 3, it is characterised in that：The secondary coil
The shape that annular circle surrounds is rectangle.
5. the power synthesis circuit based on on-chip transformer as claimed in claim 4, it is characterised in that：The secondary coil
Outermost annular circle includes two higher level's tie points and Liang Ge subordinates tie point, the innermost annular circle of the secondary coil
Including two higher level's tie points；Each higher level's tie point of the outermost annular circle of the secondary coil is arranged on one of rectangle
On side and each subordinate's tie point is arranged in the another a line of rectangle.
6. the power synthesis circuit based on on-chip transformer as claimed in claim 5, it is characterised in that：Each primary coil
Annular circle formed by the inner ring planar metal line of half and the plane of outer ring wire winds of half, each primary coil
The half-turn alignment of the outermost annular circle of the plane of outer ring metal wire of annular circle and the corresponding secondary coil, it is each described first
The half-turn alignment of the inner ring planar metal line of the annular circle of grade coil and the innermost annular circle of the corresponding secondary coil.
7. the power synthesis circuit based on on-chip transformer as claimed in claim 6, it is characterised in that：Each primary coil
Annular circle include a pair of of higher level's tie point, a pair of of higher level's tie point of each primary coil is used to be used as corresponding first work(
Rate input signal end and the second power signal input terminal.
8. the power synthesis circuit based on on-chip transformer as claimed in claim 7, it is characterised in that：Each primary coil
A pair of of higher level's tie point be arranged in the corresponding rectangular edges of plane of outer ring metal wire.
9. the power synthesis circuit based on on-chip transformer as claimed in claim 8, it is characterised in that：Each primary coil
The corresponding rectangular edges of a pair of of higher level's tie point and the secondary coil first signal output end and the second signal
The rectangular edges of output terminal are different.
10. the power synthesis circuit based on on-chip transformer as claimed in claim 9, it is characterised in that：Two primary
The corresponding rectangular edges of a pair of of higher level's tie point of coil are identical.
11. the power synthesis circuit based on on-chip transformer as claimed in claim 10, it is characterised in that：Two primary
A pair of of higher level's tie point of coil is different in the position of corresponding rectangular edges.
12. the power synthesis circuit based on on-chip transformer as claimed in claim 9, it is characterised in that：Two primary
The corresponding rectangular edges of a pair of of higher level's tie point of coil are different.
13. the power synthesis circuit based on on-chip transformer as claimed in claim 3, it is characterised in that：The on piece transformation
Device includes 3 layers of metal layer；
Each planar metal line of each annular circle of the secondary coil is located on third layer metal layer, in the company of front stage annular circle
Connect the part planar metal wire existed at position on the second layer metal layer of bottom；
Each planar metal line of the annular circle of each primary coil is located on second layer metal layer, in each primary coil
There is the part planar metal wire on the first layer metal layer of bottom in the crossover region of annular circle.
14. the power synthesis circuit based on on-chip transformer as claimed in claim 3, it is characterised in that：The on piece transformation
Device includes 4 layers of metal layer；
Each planar metal line of each annular circle of the secondary coil is located on third layer metal layer, in the company of front stage annular circle
Connect the part planar metal wire existed at position on the second layer metal layer of bottom；
Each planar metal line of the annular circle of each primary coil is located on second layer metal layer, in each primary coil
In the presence of the part planar metal wire on the first layer metal layer of bottom and positioned at first layer gold in the crossover region of annular circle
Belong to the part planar metal wire on the 0th layer of metal layer of layer bottom.
15. the power synthesis circuit based on on-chip transformer as described in claim 1, it is characterised in that：Each power is defeated
Enter the power signal input terminal that each primary coil is connected to after signal is amplified by power amplifier.
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| CN201810071114.3A CN108270406B (en) | 2018-01-25 | 2018-01-25 | Power synthesis circuit based on-chip transformer |
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| US20040111881A1 (en) * | 2002-01-23 | 2004-06-17 | Hung Yu Yang | Method of manufacturing an on-chip transformer balun |
| CN101242159A (en) * | 2007-01-10 | 2008-08-13 | 三星电机株式会社 | Systems and methods for power amplifiers with voltage boosting multi-primary transformers |
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| US20040111881A1 (en) * | 2002-01-23 | 2004-06-17 | Hung Yu Yang | Method of manufacturing an on-chip transformer balun |
| CN101242159A (en) * | 2007-01-10 | 2008-08-13 | 三星电机株式会社 | Systems and methods for power amplifiers with voltage boosting multi-primary transformers |
| US20170084378A1 (en) * | 2015-09-21 | 2017-03-23 | Qorvo Us, Inc. | Substrates with integrated three dimensional solenoid inductors |
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