CN108270058B - Double-layer cavity combiner and coupling device thereof - Google Patents
Double-layer cavity combiner and coupling device thereof Download PDFInfo
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- CN108270058B CN108270058B CN201611259208.0A CN201611259208A CN108270058B CN 108270058 B CN108270058 B CN 108270058B CN 201611259208 A CN201611259208 A CN 201611259208A CN 108270058 B CN108270058 B CN 108270058B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
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Abstract
The invention provides a double-layer cavity combiner and a coupling device thereof, wherein the double-layer cavity combiner comprises a cavity, a partition plate which is arranged in the cavity and divides the cavity into an upper-layer cavity and a lower-layer cavity, a public port and a plurality of signal single ports which are respectively arranged at two opposite ends of the cavity, a coupling hole is formed in the partition plate close to the public port, the coupling device comprises a resonance post platform close to the public port and a coupling rod arranged at the coupling hole, one end of the coupling rod is inserted into a through hole at one side of the resonance post platform, which is opposite to the public port, and the other end of the coupling rod is connected with the public port. According to the technical scheme, only one coupling rod is inserted into the through hole, the requirements of combining most frequency bands at the present stage are met, welding is not needed, the nonlinear factors of the cavity are reduced, the miniaturization and simplification design of the cavity are facilitated, and the insertion loss is not increased.
Description
Technical Field
The invention relates to the field of communication radio frequency devices, in particular to a double-layer cavity combiner and a coupling device thereof.
Background
In modern mobile communication technology, microwave devices formed by microwave filters have become indispensable important components, wherein metal cavity filters have long been the first choice of base station transmitting filters and indoor signal distribution systems of mobile communication systems due to the advantages of good electromagnetic shielding performance, compact structure, low passband insertion loss, small volume, high power capacity, wide passband bandwidth, easiness in batch processing and production and the like.
The microwave cavity combiner is composed of multiple filters, and when the pass band is more, the device miniaturization is facilitated by adopting a double-sided cavity arrangement mode. The combiner adopting the double-layer cavity has a common port which is a joint shared by a plurality of paths of an upper layer and a lower layer, and the realization form of the combiner is the difficulty of product design. The traditional design is that two wires are welded on a joint, wherein one wire is connected with a first resonant cavity of an upper passage, and the other wire is connected with a first resonant cavity of a lower passage, so that the effect of coupling the upper passage and the lower passage is achieved, or a common resonant cavity is added in the middle of the first resonant cavity of the upper passage and the lower passage of the cavity, the upper passage and the lower passage are coupled simultaneously by utilizing a common cavity, or part of the passages are coupled in a capacitance mode, and part of the passages are coupled in a direct feed mode.
In patent CN102623778A, a first coupling form is introduced, in which two bonding wires (one bonding wire is used to bond the upper resonator and the other bonding wire is used to bond the lower resonator) are required to be welded at the ports, which is time-consuming and labor-consuming, and the number of bonding points is increased inevitably by the non-linear factor of the cavity, and the bandwidths achievable at the upper and lower sides of the bonding ports are only about 200MHz respectively.
In patent CN204130675U, the adopted form is that one side is disk coupling, and the other side is welded by a wire from the top of the disk, the port assembly is complex, and there is a welding spot, which also increases the non-linear factor of the cavity, and the bandwidth realized by this structure is only 200MHz, which cannot meet the bandwidth requirement.
The mode of adopting the double-layer common resonant cavity means that a common resonant cavity is arranged between an upper layer and a lower layer, the number of the resonant cavities is increased by one due to the design, and the insertion loss is correspondingly increased and cannot be compensated; and the upper and lower double-deck adopts and shares the chamber, and the position of sharing the chamber is generally put at the intermediate position of upper and lower double-deck, not only the processing is difficult, and the port coupling is complicated moreover, is difficult to tune, is unfavorable for miniaturization and batch production of product.
Disclosure of Invention
The invention provides a double-layer cavity combiner, which is used for enlarging the adjustable range of the total bandwidth of an upper passage and a lower passage by adjusting and combining a coupling rod and a through hole of a resonance column platform inserted into the coupling rod. Meanwhile, the combination of the coupling hole and the via hole is matched with other structures of the double-layer cavity combiner to realize the adjustment of the bandwidth allocation of the upper-layer passage and the lower-layer passage.
In order to achieve the purpose, the invention provides the following technical scheme:
a double-layer cavity combiner comprises a cavity, a partition plate, a common port and a plurality of signal single ports, wherein the partition plate is arranged in the cavity and divides the cavity into an upper layer cavity and a lower layer cavity; the coupling device comprises a resonance column platform and a coupling rod, the resonance column platform comprises an upper resonance column platform and a lower resonance column platform which are electrically connected, the upper resonance column platform and the lower resonance column platform are close to a public port and are respectively arranged in an upper layer cavity and a lower layer cavity of the double-layer cavity combiner, a via hole is formed in one side, opposite to the public port, of the resonance column platform, the upper resonance column platform and the lower resonance column platform are both electrically connected with the partition plate, the coupling rod is arranged at the coupling hole, one end of the coupling rod is used for being connected with the public port of the combiner, and the other end of the coupling rod is inserted into the via hole.
Preferably, the length of the coupling rod placed in the via hole is increased or decreased to adjust the total bandwidth of the upper and lower layers of vias.
Preferably, the coupling rod is divided into two interconnected stages, and the cross-sectional area of one stage near the common port is increased or decreased to adjust the total bandwidth of the upper and lower layers of channels.
Preferably, a medium is filled between the coupling rod and the via hole.
Preferably, the effective length of the filling medium of the gap between the coupling rod and the via hole is less than or equal to the length of the via hole overlapped with the coupling rod.
Preferably, the size of the coupling hole is adjustable to realize upper and lower layer bandwidth allocation.
Preferably, the distance or the right-to-face area of the upper resonance pillar base or the lower resonance pillar base and the side wall of the common port are adjustable respectively to realize upper-layer and lower-layer bandwidth allocation.
Preferably, the lower resonant column platform is sleeved with a lower resonant column, and the mutual length change of the lower resonant column and the lower resonant column in the lower cavity of the combiner is adjustable to realize the bandwidth allocation of the upper layer and the lower layer.
Preferably, the upper resonance pylon and the lower resonance pylon are aligned or staggered up and down by taking the partition plate as a plane.
Compared with the prior art, the scheme of the invention has the following advantages:
the double-layer cavity combiner only needs one coupling rod to be inserted into the through hole, so that the bandwidths of an upper layer and a lower layer of two paths can reach more than 1GHz (1710-. Aiming at the prior common resonant cavity technology, the technical scheme of the invention is more beneficial to the miniaturization and simplification of the cavity and can not increase the insertion loss.
In addition, the invention also provides a coupling device in the double-layer cavity combiner, which meets the requirements of combining in most frequency bands at the present stage, achieves the design requirements of miniaturization and simplification, and does not increase insertion loss.
The coupling device comprises a resonance column platform and a coupling rod, the common resonance column platform comprises an upper resonance column platform and a lower resonance column platform which are electrically connected, the common resonance column platform is close to the common port and respectively arranged in an upper layer cavity and a lower layer cavity of the combiner, and a through hole is formed in the common resonance column platform; the coupling rod is arranged at a coupling hole formed in the partition plate and close to the public port, one end of the coupling rod is used for being connected with the public port of the double-layer cavity combiner, and the other end of the coupling rod is inserted into the through hole.
Compared with the prior art, the scheme of the invention has the following advantages:
the invention provides a coupling device, which can simultaneously realize the port bandwidth of an upper layer filter channel and a lower layer filter channel by inserting a coupling rod into a through hole, wherein the bandwidth of the upper layer filter channel and the lower layer filter channel can respectively reach high frequency 1GHz (1710-. Aiming at the prior common resonant cavity technology, the technical scheme of the invention is more beneficial to the miniaturization and simplification of the cavity and can not increase the insertion loss.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a partial perspective view of a combiner common with couplers;
fig. 2 is a partial perspective view of a single end of a combiner with a coupler located therein;
fig. 3 is a cross-sectional view of a combiner with couplers;
fig. 4 is a side view of a combiner with couplers;
fig. 5 is a bottom view of a combiner with couplers.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative only and should not be construed as limiting the invention.
The invention provides a double-layer cavity combiner which can meet the bandwidth requirements of an upper broadband access and a lower broadband access, and the two bandwidths can respectively reach a high frequency of 1GHz (1710-.
As shown in fig. 1-5, the present invention provides a double-cavity combiner. The double-layer cavity combiner realizes bandwidth allocation of signals input by a common port between an upper layer cavity and a lower layer cavity, and comprises a cavity 100, a partition plate 130 arranged in the cavity 100 and dividing the cavity into the upper layer cavity 110 and the lower layer cavity 120, common ports 101 and signal single ports 104 arranged at two opposite ends of the cavity 100, and a coupling device.
The partition 130 is provided with a coupling hole 131 near the common port 101 for coupling and transmitting signals between the upper and lower cavities.
The coupling device comprises a resonance pylon and a coupling rod connected to the resonance pylon.
The resonant pedestals are disposed on the partition 130 near the common port 101, and include an upper resonant pedestal 111 disposed in the upper cavity 110 and a lower resonant pedestal 121 disposed in the lower cavity 120, which are electrically connected to each other and are electrically connected to the partition 130. And a via hole 103 is formed in one side of the resonance column platform opposite to the common port 101 of the double-layer cavity combiner. The coupling rod 102 is disposed in a space corresponding to the coupling hole 131, and one end thereof is connected to the common port 101, and the other end thereof is inserted into the via hole 103.
The relative positions of the upper resonance post 111 and the lower resonance post 121 to the partition 130 are located at the aligned position with the axis of the joint of the common port 101 as the center or are offset from each other.
The double-layer cavity combiner adjusts the total bandwidth of the upper-layer passage and the lower-layer passage by adjusting the relative positions of the coupling rod 102 and the via hole 103, compared with the traditional double-layer cavity combiner, the double-layer cavity combiner realizes that the bandwidth of the upper-layer passage and the bandwidth of the lower-layer passage can respectively reach more than high frequency 1GHz (1710-.
The invention also provides a coupling device arranged in the double-layer cavity combiner, which is the coupling device: which comprises a resonance pylon and a coupling rod connected with the resonance pylon.
The resonant pedestals are disposed on the partition 130 near the common port 101, and include an upper resonant pedestal 111 disposed in the upper cavity 110 and a lower resonant pedestal 121 disposed in the lower cavity 120, which are electrically connected to each other and are electrically connected to the partition 130. And a via hole 103 is formed in one side of the resonance column platform opposite to the common port 101 of the double-layer cavity combiner. The coupling rod 102 is disposed in a space corresponding to the coupling hole 131, and one end thereof is connected to the common port 101, and the other end thereof is inserted into the via hole 103.
The coupling device can meet the requirements of combining most frequency bands at the present stage, has the advantages of convenience in processing and assembling, small size and the like, and can enable the combiner in the form of a double-layer cavity structure to be better applied to a modern mobile communication system.
The coupling rod 102 is inserted into the via hole 103, and the total bandwidth of the upper layer passage and the lower layer passage can be adjusted by adjusting the combination mode of the coupling rod 102 and the via hole 103.
Specifically, the adjustable range of the total bandwidth of the upper layer common end and the lower layer common end is expanded by adjusting the length of the coupling rod 102 placed in the through hole 103. When the length of the coupling rod 102 in the via hole 103 is increased, the coupling area is increased, that is, the coupling capacitance between the coupling rod 102 and the via hole 103 is increased, that is, the electromagnetic energy of the coupling rod 102 and the via hole 103 is increased, so that the total bandwidth of the upper and lower layer paths is increased. Conversely, as the coupling rod 102 decreases in length of the via 103, the coupling area decreases, i.e., the coupling capacitance between the coupling rod 102 and the via 103 decreases, and the total bandwidth of the upper and lower level vias decreases.
In this embodiment, the coupling rod 102 is divided into two stages connected to each other, one stage is a section inserted into the via hole 103, and the other stage is a section from the common port 101 to the entrance of the via hole 103, that is, the coupling rod 102 is located at a stage close to the common port 101. The adjustable range of the total bandwidth of the upper and lower level paths is expanded by changing the cross-sectional area of the coupling rod 102 one level closer to the common port 101. Specifically, if the cross-sectional area of the coupling rod 102 is increased one step closer to the common port 101, the energy transferred to the common port 101 by the coupling rod 102 is increased, thereby increasing the total bandwidth of the upper and lower layer paths. Conversely, as the cross-sectional area of the coupling rod 102 becomes smaller by one step near the common port 101, the energy transferred to the common port 101 by the coupling rod 102 decreases, thereby decreasing the total bandwidth of the upper and lower level paths.
Since electromagnetic field energy is generally concentrated between the coupling rod 102 and the via hole 103, the adjustable range of the total bandwidth of the common port 101 is expanded by filling the gap between the coupling rod 102 and the via hole 103 with filling media of different dielectric constants. Specifically, as the dielectric constant of the fill medium increases, the total bandwidth of the common port 101 increases; conversely, as the dielectric constant of the fill dielectric decreases, the overall bandwidth of the upper and lower level vias decreases.
Furthermore, if the effective length of the filling medium is changed, the adjustable range of the total bandwidth of the upper layer passage and the lower layer passage is expanded. The range of the so-called effective length is limited to the range of the overlapping length of the via hole 103 and the coupling rod 102, that is, less than or equal to the overlapping length of the via hole 103 and the coupling rod 102, which is necessarily limited within the via hole 103.
The above changes in the combination of the coupling rod 102 and the via 103 can adjust the total bandwidth of the upper and lower layer vias. The bandwidth increase or decrease of the hierarchical path in which the coupling rod 102 is located is more pronounced as the total bandwidth of the upper and lower level paths increases or decreases. As in fig. 3, the coupling rod 102 is in the upper cavity 110, so the bandwidth increment or decrement of the upper path is more significant at this time. At the same time, the bandwidth of the lower layer path will be reduced or increased accordingly. Conversely, if the coupling rod 102 is in the lower cavity 120, the bandwidth of the lower path may increase or decrease more significantly, while the bandwidth of the upper path may decrease or increase accordingly.
The double-layer cavity combiner of the invention more conveniently and more widely adjusts the total bandwidth of the upper and lower layer paths by adjusting the length of the via hole 103 in which the coupling rod 102 is arranged, the filling medium or the length of the gap between the coupling rod 102 and the via hole 103, and the change of the size of the cross-sectional area of the coupling rod 102 close to the common port 101, and also overcomes the defects of complicated structure and large bandwidth loss of the bonding wire connection in the traditional double-layer combiner.
Further, the invention can also adjust the bandwidth allocation of the upper and lower layer paths by the following modes: this is achieved by the position of the coupling rod 102 relative to the diaphragm 130, the size of the coupling hole 131, the distance or facing area of the upper resonance stub 111 or the lower resonance stub 121 from the common end sidewall 140, respectively, and the mutual length variation of the lower resonance stub 121 and the lower resonance stub 122 in the lower cavity 120.
Specifically, the bandwidth allocation of the upper and lower layer paths is achieved by changing the position of the coupling rod 102 between the upper and lower resonance pylons 111 and 121 and the distance in the up-down direction from the diaphragm 130. In the embodiment shown in fig. 3, when the coupling rod 102 is placed in the upper cavity 110 and the partition 130 is used as the ground, the coupling rod 102 moves upward, that is, the height of the upper cavity 110 to the ground increases, the bandwidth allocated to the upper channel increases; at the same time, the height of the lower cavity 120 to ground is reduced, and the bandwidth allocated to the lower channel is correspondingly reduced. Similarly, if the coupling rod 102 is placed in the lower cavity 120 and the coupling rod 102 moves downward, the bandwidth allocated to the lower layer of the channel increases and the bandwidth allocated to the upper layer of the channel decreases accordingly. That is, the bandwidth allocation of the upper and lower double-layer paths can be realized by adjusting the height of the coupling rod 102.
Specifically, the adjustment of the bandwidth allocation of the lower or upper layer of the path is achieved by adjusting the size of the coupling hole 131 while keeping the coupling rod 102 interposed between the upper resonance stage 111 and the lower resonance stage 121 at a constant position. When the coupling rod 102 is in the upper cavity 110 and is not displaced, the upper coupling bandwidth mainly couples the coupling rod 102 directly into the via 103, and the lower port coupling bandwidth is mainly coupled by the upper resonant pillar 111 through the coupling hole 131, and then increasing or decreasing the size of the coupling hole 131 mainly increases or decreases the bandwidth allocation of the lower via, and at the same time, the bandwidth allocation of the upper via correspondingly decreases or increases. Conversely, when the coupling rod 102 is at the lower layer and is not displaced, increasing or decreasing the size of the coupling hole 131 will mainly increase or decrease the bandwidth allocation of the upper layer path, and correspondingly decrease or increase the bandwidth allocation of the lower layer path.
Specifically, the bandwidth allocation of the upper and lower layer paths is realized by adjusting the distance or the size of the facing area between the upper resonance stub 111 or the lower resonance stub 121 and the inner wall of the cavity of the double-layer cavity combiner. The inner wall of the cavity of the combiner is particularly the side wall 140 where the common port is located. When the upper resonant pedestal 111 or the lower resonant pedestal 121 is close to the common port sidewall 140, the coupling rod 102 is shortened at a stage close to the common port 101, enhancing the ability of the via 103 to couple the energy of the rod 102 back to the common port 101. Conversely, when the upper resonant pedestal 111 or the lower resonant pedestal 121 is spaced away from the common port sidewall 140, the coupling rod 102 grows one step closer to the common port 101, which impairs the ability of the via 103 to couple the rod 102 energy back to the common port 101. Specifically, as the distance between the upper resonant pedestal 111 and the sidewall 140 decreases, the bandwidth allocation of the upper layer path increases while the bandwidth allocation of the lower layer path correspondingly decreases; as the distance between the upper resonant pedestal 111 and the sidewall 140 increases, the bandwidth allocation of the upper layer path decreases while the bandwidth allocation of the lower layer path increases accordingly. Similarly, when the distance between the lower resonant pillar 121 and the sidewall 140 decreases, the bandwidth allocation of the lower layer path increases, and the bandwidth allocation of the upper layer path correspondingly decreases; as the distance of the lower resonant pedestal 121 from the sidewall 140 increases, the bandwidth allocation of the lower layer via decreases and the bandwidth allocation of the upper layer via increases accordingly.
When the facing area of the upper resonance pylon 111 and the side wall 140 is increased, namely the capacitance of the side wall 140 is increased, the electromagnetic feed transmission is enhanced, and the bandwidth distribution of an upper passage is increased; conversely, when the facing area of the upper common port resonance column 111 and the common port side wall 121 is reduced by the distance therebetween, that is, the capacitance of the side wall 140 is reduced, the electromagnetic feed transmission is weakened, and the bandwidth allocation of the upper layer path is reduced. Similarly, when the facing area of the lower resonant pillar 121 and the sidewall 140 is increased, the bandwidth allocation of the lower-layer passage is increased; conversely, when the directly opposing area of lower resonant pedestal 121 and sidewall 140 is reduced, the bandwidth allocation of the lower via is reduced.
Specifically, the lower resonance pylon 121 is sleeved with the lower resonance post 122, and the bandwidth allocation of the upper and lower passages is adjusted by using the mutual length change relationship between the lower resonance pylon 121 and the lower resonance post 122. When the length of the lower resonant column 121 is increased, the length of the lower resonant column 122 is reduced, the frequency of the lower cavity 120 is kept unchanged, the bandwidth allocation of the lower passage can be increased, and the bandwidth allocation of the upper passage is correspondingly reduced; the length of the lower resonant column 122 is increased while the length of the lower resonant column 121 is decreased, keeping the frequency of the lower cavity 120 constant, and the bandwidth allocation of the lower path can be decreased, while the bandwidth allocation of the upper path is increased accordingly.
A connector is connected to each of the common port 101 and the single port 104. In this embodiment, the common port 101 is connected with a first connector 201, and the first connector 201 is assembled with the coupling rod 102. In this embodiment, the first connector 201 is integral with the coupling rod 102. According to the adjustment of the position of the via hole 103 between the upper resonance pylon 111 and the lower resonance pylon 121, the position of the coupling rod 102 is adjusted by directly adjusting the position of the first connector 201 at the common port 101, so that the coupling rod 102 is ensured to be inserted into the via hole 103. In this embodiment, the present invention includes 2 single ports 104, which are respectively connected to the second and third connectors 202, 203, the second connector 202 is connected to the coupling rod 105 and inserted into the upper cavity 110, and the connector 203 couples the signal into the lower cavity 120 through the bonding wire 125. The frequency range of the upper-layer passband of the double-layer cavity combiner is 1710MHz-2700MHz, and the frequency range of the lower-layer passband is 700MHz-960 MHz. Two single-port upper and lower two-layer altogether 2 passageways merge to connect 201, and the upper strata passageway has distributed the bandwidth more than 1GHz, and the lower floor passageway has distributed the bandwidth more than 260MHz, has satisfied modern mobile communication system to the needs of wave filter miniaturization, frequency bandwidth width, low insertion loss, high suppression and simple structure.
The foregoing is only a partial embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. A double-layer cavity combiner comprises a cavity, a partition plate, a common port and a plurality of signal single ports, wherein the partition plate is arranged in the cavity and divides the cavity into an upper layer cavity and a lower layer cavity; the method is characterized in that: the coupling device comprises a resonance column platform and a coupling rod, wherein the resonance column platform comprises an upper resonance column platform and a lower resonance column platform which are electrically connected, the upper resonance column platform and the lower resonance column platform are close to the common port and are respectively arranged in an upper layer cavity and a lower layer cavity of the double-layer cavity combiner, a through hole is formed in one side, opposite to the common port, of the resonance column platform, the upper resonance column platform and the lower resonance column platform are both electrically connected with the partition plate, the coupling rod is arranged at the coupling hole, one end of the coupling rod is used for being connected with the common port of the combiner, and the other end of the coupling rod is inserted into the through hole;
the lower resonance column platform is sleeved with a lower resonance column, and the mutual length change of the lower resonance column platform and the lower resonance column in a lower-layer cavity of the combiner is adjustable to realize the bandwidth allocation of the upper layer and the lower layer; when the length of the lower resonant column platform is increased, the length of the lower resonant column is reduced, the frequency of a lower-layer cavity is kept unchanged, the bandwidth allocation of a lower-layer passage is increased, and the bandwidth allocation of an upper-layer passage is correspondingly reduced; when the length of the lower resonant column is reduced and the length of the lower resonant column is increased, the frequency of the lower-layer cavity is kept unchanged, the bandwidth allocation of the lower-layer passage is reduced, and the bandwidth allocation of the upper-layer passage is correspondingly increased.
2. The dual-layer cavity combiner of claim 1, wherein: the length of the coupling rod placed in the through hole is increased or decreased to adjust the total bandwidth of the upper layer passage and the lower layer passage.
3. The dual-layer cavity combiner of claim 1, wherein: the coupling rod is divided into two mutually connected stages, and the cross sectional area of one stage of the coupling rod close to the common port is increased or reduced to adjust the total bandwidth of the upper layer passage and the lower layer passage.
4. The dual-layer cavity combiner of claim 1, wherein: and a medium is filled between the coupling rod and the via hole.
5. The dual-layer cavity combiner of claim 1, wherein: the effective length of the filling medium of the gap between the coupling rod and the via hole is less than or equal to the length of the via hole overlapped with the coupling rod.
6. The dual-layer cavity combiner of any one of claims 1-5, wherein: the size of the coupling hole can be adjusted to realize the bandwidth allocation of the upper layer and the lower layer.
7. The dual-layer cavity combiner of any one of claims 1-5, wherein: the upper resonance column platform or the lower resonance column platform can be respectively adjusted in distance or right-to-face area with the side wall of the public port to realize upper-layer and lower-layer bandwidth allocation.
8. The dual-layer cavity combiner of any one of claims 1-5, wherein: the upper resonance pylon and the lower resonance pylon are aligned up and down or arranged in a staggered way by taking the partition plate as a plane.
9. A coupling device, characterized by: the device comprises a resonance column platform and a coupling rod, wherein the common resonance column platform comprises an upper resonance column platform and a lower resonance column platform which are electrically connected, is close to a common port and is respectively arranged in an upper layer cavity and a lower layer cavity of a combiner, and a through hole is formed in the common resonance column platform; the coupling rod is arranged at a coupling hole formed in the partition plate and close to the public port, one end of the coupling rod is used for being connected with the public port of the double-layer cavity combiner, and the other end of the coupling rod is inserted into the through hole;
the lower resonance column platform is sleeved with a lower resonance column, and the mutual length change of the lower resonance column platform and the lower resonance column in a lower-layer cavity of the combiner is adjustable to realize the bandwidth allocation of the upper layer and the lower layer; when the length of the lower resonant column platform is increased, the length of the lower resonant column is reduced, the frequency of a lower-layer cavity is kept unchanged, the bandwidth allocation of a lower-layer passage is increased, and the bandwidth allocation of an upper-layer passage is correspondingly reduced; when the length of the lower resonant column is reduced and the length of the lower resonant column is increased, the frequency of the lower-layer cavity is kept unchanged, the bandwidth allocation of the lower-layer passage is reduced, and the bandwidth allocation of the upper-layer passage is correspondingly increased.
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| CN110474141B (en) * | 2019-08-08 | 2024-02-27 | 京信通信技术(广州)有限公司 | Combiner device |
| CN111509342B (en) * | 2020-05-29 | 2024-10-08 | 南京三石通信技术有限公司 | Miniaturized multichannel 5G anti-interference filter |
| CN112366433B (en) * | 2020-11-06 | 2024-06-21 | 京信射频技术(广州)有限公司 | Double-layer cavity arrangement structure, combiner and cavity arrangement method thereof |
| CN112821021B (en) * | 2021-01-22 | 2022-05-17 | 华沣通信科技有限公司 | Sheet welding type small filter and manufacturing method thereof |
| CN113346210A (en) * | 2021-04-27 | 2021-09-03 | 深圳市数创众泰科技有限公司 | Combiner and communication equipment |
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