CN108269939A - A kind of preparation method of near-infrared quantum point luminescent diode - Google Patents
A kind of preparation method of near-infrared quantum point luminescent diode Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000002096 quantum dot Substances 0.000 claims abstract description 79
- 230000005540 biological transmission Effects 0.000 claims abstract description 26
- 238000005507 spraying Methods 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 7
- 239000002243 precursor Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 23
- 230000005525 hole transport Effects 0.000 claims description 20
- 239000003446 ligand Substances 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 claims description 18
- 239000002002 slurry Substances 0.000 claims description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 2
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 claims description 2
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 claims description 2
- 229910003107 Zn2SnO4 Inorganic materials 0.000 claims description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- QXYJCZRRLLQGCR-UHFFFAOYSA-N molybdenum(IV) oxide Inorganic materials O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims 1
- 230000026030 halogenation Effects 0.000 claims 1
- 238000005658 halogenation reaction Methods 0.000 claims 1
- 239000004615 ingredient Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 56
- 239000010410 layer Substances 0.000 description 44
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- QDWGRSGGOUPRJF-UHFFFAOYSA-N O.O.[O--].[Zn++] Chemical compound O.O.[O--].[Zn++] QDWGRSGGOUPRJF-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention discloses a kind of preparation methods of near-infrared quantum point luminescent diode, belong to luminous, display and nanosecond science and technology field.The near-infrared quantum point luminescent diode (QLED) of the present invention is made of transparent conductive oxide anode TOC (1), hole transmission layer HTL (2), CdSeTe quantum dot light emitting layers EL (3), electron transfer layer ETL (4) and metallic cathode CL (5).The present invention gradually forms the controllable HTL of thickness (2), EL (3), ETL (4) and CL (5) using spraying technology on TOC (1).By regulate and control CdSeTe ternary quantum ingredients and size can realize in the near-infrared luminous ranges of 800nm~900nm it is arbitrary adjustable.Technology of preparing of the present invention has using extensive, large area preparation and industrialized production, and stock utilization is high, at low cost.The near-infrared quantum dots light-emitting diode luminous efficiency of the present invention is high, stability is good.
Description
Technical field
The invention belongs to luminous, display and nanosecond science and technology fields, and in particular to a kind of near-infrared quantum dots light-emitting diodes
The preparation method of pipe.
Background technology
Quantum dot refers to that three-dimensional dimension both less than or close to its bohr exciton radii, shows the nanometer of quantum effect
Particle.Quantum dot be found to be in earliest 1980 (A.I.Ekimov,
A.A.Onushchenko, JETP Letters.1981,34,363.) it is, but really studied and apply and be
In birth (Murry C B, Norris D J, the Bawendi M G.Journal of the of hot injection method in 1993
American Chemical Society,1993,115, 8706-8715.).This landmark synthetic method can be prepared
The quantum dot of monodisperse and high luminescence is obtained, the application for quantum dot is laid a good foundation.
Light emitting diode (LED) is the key areas of quantum dot application.Compared with traditional luminescent material, quanta point material
With wide excitation area and relatively narrow emission spectrum, the range of fluorescence spectrum can be distributed in whole visible-ranges.Due to
Quantum confined effect, the light emitting region of quantum dot can carry out accuracy controlling by changing its size.Light emitting diode with quantum dots
Preparation condition it is simple, the advantages that chemical stability is good, and luminous efficiency is high, and emission wavelength is adjustable, and color saturation is high, also cause
The great attention of the research field, and be expected to become follow-on luminous representative.Southeast China University discloses a kind of zinc oxide-oxygen
Change the preparation method (application number of magnesium (ZnO-MgO) nuclear shell structure quantum point light emitting diode：2017100407257) it is and a kind of high
Imitate blue light quantum point light emitting diode and preparation method thereof (application number：201610970298.8).TCL companies disclose one kind
Full-inorganic light emitting diode with quantum dots and preparation method thereof (application number：201610036399).
Near-infrared luminous diode is a kind of near-infrared luminous device for converting electrical energy into luminous energy, it have it is small,
The low in energy consumption, series of advantages such as directive property is good, are widely used in remote control, telemetering, optically isolated, photoswitch, photo-electric control, target following
Etc. systems.Quantum dot is due to multiple exciton efficiency, for being expected to obtain higher luminous effect under lower-wattage in light emitting diode
Rate.Binary quantum dot, such as PbS, PbSe are also focused primarily upon in the light emitting diode with quantum dots of near-infrared.And binary quantum
Point light emitting region relies primarily on its size and is adjusted, and has a significant limitations, and luminous efficiency and stability also need into
One step improves.So a kind of simple in structure, luminous efficiency of exploitation is high and the near-infrared quantum point luminescent diode of service life length
It is of great significance.
Invention content
The purpose of the present invention is designing a kind of near-infrared quantum point luminescent diode, using CdSeTe ternary quantum dots as
Luminescent material, by adjusting quantum dot compositions with adjustable in size realization 800~900nm near infrared regions, and light emitting diode
Each functional layer of structure is prepared by spraying technology, and this method is conducive to prepare large area light emitting diode and industrialization
Production.
The present invention is achieved by the following technical solutions：
A kind of near-infrared quantum point luminescent diode is by transparent conductive oxide anode TOC (1), hole transmission layer HTL
(2), CdSeTe quantum dot light emitting layers EL (3), electron transfer layer ETL (4) and metallic cathode CL (5) compositions, the structure light-emitting two
Pole pipe is prepared by spraying technology, and specific preparation process is as follows：
(a) the hole transport precursor solution of 0.03~1.0 molar concentration is sprayed on transparent conductive oxide anode TOC
(1) on, substrate heating makes the temperature of TOC (1) control at 40~100 DEG C, forms the hole transmission layer HTL that thickness is 10~50nm
(2)；
(b) 0.03~0.2 molar concentration CdSeTe quantum dot solutions are sprayed on HTL (2), control HTL temperature is 40
~100 DEG C, form the CdSeTe quantum dot light emitting layers EL (3) that thickness is 5~30nm；
(c) the electron transport material precursor solution of 0.05~0.3 molar concentration is sprayed on EL (3), the EL temperature of control
It is 40~100 DEG C to spend, and obtains the ETL (4) that thickness is 10~200nm；
(d) metal paste of 0.5~1.5 molar concentration is sprayed on ETL (4), the temperature for controlling ETL is 40~100
DEG C, obtain the metallic cathode CL (5) that thickness is 20~100nm.
Further, the ingredient of CdSeTe quantum dots is Cd (SexTey), wherein x:Y is 8:2~2:8；And using carboxylic
It is one or more to CdSeTe quantum dots progress modifying interface in ylidene ligands, mercaptan ligand and halide ligand.
Further, transparent conductive oxide anode TOC (1) is indium doped tin oxide (ITO) or fluorine doped tin oxide
(FTO)。
Further, hole transmission layer HTL (2) is Poly-TPD, TFB, PVK, PETDOT:PSS, NiO, MgNiO,
CBP, Spiro-OMeTAD, TCTA, MoO2Or WO3In it is one or more.
Further, electron transfer layer ETL (4) is TiO2, ZnO, SnO2, AlZnO, MgZnO, Zn2SnO4, Nb2O5,
In2O3, SrTiO4, TPBi, Alq3, TZA, PBD are one or more in PCBM or BCP.
Further, metallic cathode CL (5) is prepared by a kind of spraying in metallic silver, gold or aluminum slurry.
The advantageous effects of the present invention：
Using CdSeTe ternary quantum dots as luminescent layer, because CdSeTe quantum dots can be adjusted by size and ingredient
Band gap, modification scope is wider, and chemical stability is good, and emission spectra is narrow, and luminescent properties are excellent, can obtain high-luminous-efficiency and height is steady
Qualitatively near-infrared quantum point luminescent diode.The present invention prepares light emitting diode using full spraying technology, and this method is conducive to system
Standby large area light emitting diode and industrialized production, and stock utilization is high, of low cost and reproducible.
Description of the drawings
The structure chart of the near-infrared luminous diodes of Fig. 1
Fig. 2 quantum dot transmission electron microscope shape appearance figures
Fig. 3 quantum dot light photoluminescence collection of illustrative plates
Fig. 4 light emitting diode with quantum dots scanning electron microscope sectional views
The current-voltage figure of Fig. 5 light emitting diode with quantum dots
Specific embodiment
For the purposes of the present invention, technical solution and advantage are more clearly understood, with reference to the accompanying drawings and embodiments, to this
Invention is explained in further detail.It should be appreciated that specific embodiment described herein is only used for explaining invention, it is not used to
The present invention.
On the contrary, the present invention covers the replacement done in the spirit and scope of the present invention that any requirement of having the right defines, repaiies
Change, equivalent amplification and scheme.Further, in order to have a better understanding to the present invention in constructing, below to the thin of the present invention
It is detailed to describe some specific detail sections in section description.Part without these details for a person skilled in the art
Description can also understand the present invention completely.
Embodiment 1
(a) the p-TPD hole transport precursor solutions of 0.03 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 40 DEG C, forms the hole transmission layer HTL (2) that thickness is 10nm.(b) it 0.1 rubs mercaptan is ligand modified
You are concentration C dSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, and it is 20nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.1 molar concentration are sprayed on EL (3)
On, the EL temperature of control is 80 DEG C, obtains the ETL (4) that thickness is 100nm.(d) the Ag slurries of 0.1 molar concentration are sprayed
On ETL (4), the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.Two pole of quantum dot light emitting
The external quantum efficiency of pipe reaches 5%.
Embodiment 2
(a) the p-TPD hole transport precursor solutions of 1.0 molar concentrations are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 100 DEG C, forms the hole transmission layer HTL (2) that thickness is 50nm.(b) by mercaptan it is ligand modified 0.1
Molar concentration CdSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, and it is 20nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.1 molar concentration are sprayed on EL (3)
On, the EL temperature of control is 80 DEG C, obtains the ETL (4) that thickness is 100nm.(d) the Ag slurries of 0.1 molar concentration are sprayed on
On ETL (4), the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.Light emitting diode with quantum dots
External quantum efficiency reach 7%.
Embodiment 3
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) it 0.1 rubs mercaptan is ligand modified
You are concentration C dSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, and it is 20nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.1 molar concentration are sprayed on EL (3)
On, the EL temperature of control is 80 DEG C, obtains the ETL (4) that thickness is 100nm.(d) the Ag slurries of 0.1 molar concentration are sprayed
On ETL (4), the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.Two pole of quantum dot light emitting
The external quantum efficiency of pipe reaches 9%.
Embodiment 4
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) by mercaptan it is ligand modified 0.03
Molar concentration CdSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 40 DEG C, and it is 5nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.1 molar concentration are sprayed on EL
(3) on, the EL temperature of control is 80 DEG C, obtains the ETL (4) that thickness is 100nm.(d) the Ag slurries of 0.1 molar concentration are sprayed
On ETL (4), the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.Light emitting diode with quantum dots
External quantum efficiency reach 2%.
Embodiment 5
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) by mercaptan it is ligand modified 0.2
Molar concentration CdSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 100 DEG C, and it is 30nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.1 molar concentration are sprayed on EL
(3) on, the EL temperature of control is 80 DEG C, obtains the ETL (4) that thickness is 100nm.(d) by the Ag pulp sprayings of 0.1 molar concentration
It is coated on ETL (4), the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.Quantum dot light emitting two
The external quantum efficiency of pole pipe reaches 6%.
Embodiment 6
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) by mercaptan it is ligand modified 0.1
Molar concentration CdSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, and it is 20nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.1 molar concentration are sprayed on EL
(3) on, the EL temperature of control is 80 DEG C, obtains the ETL (4) that thickness is 100nm.(d) by the Ag pulp sprayings of 0.1 molar concentration
It is coated on ETL (4), the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.Quantum dot light emitting two
The external quantum efficiency of pole pipe reaches 8%.
Embodiment 7
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) it 0.1 rubs mercaptan is ligand modified
You are concentration C dSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, and it is 20nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.05 molar concentration are sprayed on EL
(3) on, the EL temperature of control is 40 DEG C, obtains the ETL (4) that thickness is 10nm.(d) by the Ag pulp sprayings of 0.1 molar concentration
It is coated on ETL (4), the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.Quantum dot light emitting two
The external quantum efficiency of pole pipe reaches 1%.
Embodiment 8
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) by mercaptan it is ligand modified 0.1
Molar concentration CdSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, and it is 20nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.3 molar concentration are sprayed on EL
(3) on, the EL temperature of control is 100 DEG C, obtains the ETL (4) that thickness is 200nm.(d) by the Ag pulp sprayings of 0.1 molar concentration
It is coated on ETL (4), the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.Quantum dot light emitting two
The external quantum efficiency of pole pipe reaches 3%.
Embodiment 9
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) by mercaptan it is ligand modified 0.1
Molar concentration CdSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, and it is 20nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.1 molar concentration are sprayed on EL
(3) on, the EL temperature of control is 60 DEG C, obtains the ETL (4) that thickness is 100nm.(d) by the Ag pulp sprayings of 0.1 molar concentration
It is coated on ETL (4), the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.Quantum dot light emitting two
The external quantum efficiency of pole pipe reaches 9%.
Embodiment 10
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) it 0.1 rubs mercaptan is ligand modified
You are concentration C dSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, and it is 20nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.3 molar concentration are sprayed on EL (3)
On, the EL temperature of control is 100 DEG C, obtains the ETL (4) that thickness is 200nm.(d) the Ag slurries of 0.5 molar concentration are sprayed
On ETL (4), the temperature for controlling ETL is 40 DEG C, obtains the metallic cathode CL (5) that thickness is 20nm.Two pole of quantum dot light emitting
The external quantum efficiency of pipe reaches 4%.
Embodiment 11
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) it 0.1 rubs mercaptan is ligand modified
You are concentration C dSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, and it is 20nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.3 molar concentration are sprayed on EL (3)
On, the EL temperature of control is 100 DEG C, obtains the ETL (4) that thickness is 200nm.(d) the Ag slurries of 1.5 molar concentrations are sprayed
On ETL (4), the temperature for controlling ETL is 100 DEG C, obtains the metallic cathode CL (5) that thickness is 100nm.Quantum dot light emitting two
The external quantum efficiency of pole pipe reaches 7%.
Embodiment 12
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) it 0.1 rubs mercaptan is ligand modified
You are concentration C dSexTeyQuantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, and it is 20nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.1 molar concentration are sprayed on EL (3)
On, the EL temperature of control is 70 DEG C, obtains the ETL (4) that thickness is 100nm.(d) the Ag slurries of 0.1 molar concentration are sprayed
On ETL (4), the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.
The different quantum dots of table 1 influence light emitting diode performance
Embodiment 13
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) the 0.1 of different ligands modification is rubbed
You are concentration C dSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, and it is 20nm's to form thickness
CdSe7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.1 molar concentration are sprayed on EL (3)
On, the EL temperature of control is 70 DEG C, obtains the ETL (4) that thickness is 100nm.(d) the Ag slurries of 0.1 molar concentration are sprayed
On ETL (4), the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.
2 different ligands of table influence light emitting diode performance
Embodiment 14
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on transparent oxide conduction TOC (1),
Substrate heating makes the temperature of TOC (1) control at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) mercaptan is repaiied
0.1 molar concentration CdSe of decorations7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, and forming thickness is
The CdSe of 20nm7Te3Quantum dot light emitting layer EL (3).(c) the ZnO electron transport materials precursor solution of 0.1 molar concentration is sprayed
On EL (3), the EL temperature of control is 70 DEG C, obtains the ETL (4) that thickness is 100nm.(d) Ag of 0.1 molar concentration is starched
Material is sprayed on ETL (4), and the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.
3 difference TOC of table influences light emitting diode performance
Embodiment 15
(a) the different hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) it is dense by 0.1 mole of mercaptan modification
Spend CdSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, forms the CdSe that thickness is 20nm7Te3
Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.1 molar concentration are sprayed on EL (3), controlled
EL temperature for 70 DEG C, obtain the ETL (4) that thickness is 100nm.(d) the Ag slurries of 0.1 molar concentration are sprayed on ETL (4)
On, the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.
The different hole transmission layers of table 4 influence light emitting diode performance
Embodiment 16
(a) the different hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) it is dense by 0.1 mole of mercaptan modification
Spend CdSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, forms the CdSe that thickness is 20nm7Te3
Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.1 molar concentration are sprayed on EL (3), controlled
EL temperature for 70 DEG C, obtain the ETL (4) that thickness is 100nm.(d) the Ag slurries of 0.1 molar concentration are sprayed on ETL (4)
On, the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.
The different electron transfer layers of table 5 influence light emitting diode performance
Embodiment 17
(a) the p-TPD hole transport precursor solutions of 0.5 molar concentration are sprayed on ITO (1), substrate heating makes TOC
(1) temperature is controlled at 80 DEG C, forms the hole transmission layer HTL (2) that thickness is 30nm.(b) it is dense by 0.1 mole of mercaptan modification
Spend CdSe7Te3Quantum dot solution is sprayed on HTL (2), and control HTL temperature is 70 DEG C, forms the CdSe that thickness is 20nm7Te3
Quantum dot light emitting layer EL (3).(c) the ZnO electron transport material precursor solutions of 0.1 molar concentration are sprayed on EL (3), controlled
EL temperature for 70 DEG C, obtain the ETL (4) that thickness is 100nm.(d) metal paste of 0.1 molar concentration is sprayed on ETL
(4) on, the temperature for controlling ETL is 80 DEG C, obtains the metallic cathode CL (5) that thickness is 50nm.
6 different metal cathode material of table
Claims (6)
1. a kind of preparation method of near-infrared quantum point luminescent diode, it is characterised in that the light emitting diode is by electrically conducting transparent
Oxide anode TOC (1), hole transmission layer HTL (2), CdSeTe quantum dot light emitting layers EL (3), electron transfer layer ETL (4) and
Metallic cathode CL (5) is formed, and is prepared using spraying technology, and specific preparation process is as follows：
(a) the hole transport precursor solution of 0.03~1.0 molar concentration is sprayed on transparent conductive oxide anode TOC (1),
Substrate heating makes the temperature of transparent conductive oxide anode TOC (1) control at 40~100 DEG C, and it is 10~50nm's to form thickness
Hole transmission layer HTL (2)；
(b) 0.03~0.2 molar concentration CdSeTe quantum dot solutions are sprayed on hole transmission layer HTL (2), control hole passes
Defeated layer HTL temperature is 40~100 DEG C, forms the CdSeTe quantum dot light emitting layers EL (3) that thickness is 5~30nm；
(c) the electron transport material precursor solution of 0.05~0.3 molar concentration is sprayed on CdSeTe quantum dot light emitting layers EL (3)
On, the EL temperature of control is 40~100 DEG C, obtains the electron transfer layer ETL (4) that thickness is 10~200nm；
(d) metal paste of 0.5~1.5 molar concentration is sprayed on electron transfer layer ETL (4), the temperature for controlling ETL is 40
~100 DEG C, obtain the metallic cathode CL (5) that thickness is 20~100nm.
2. a kind of preparation method of near-infrared quantum point luminescent diode according to claim 1, it is characterised in that
CdSeTe quantum dot compositions are Cd (SexTey), wherein x:Y is 8:2~2:8；And using carboxyl ligand, mercaptan ligand and halogenation
It is one or more to CdSeTe quantum dots progress modifying interface in object ligand.
3. the preparation method of a kind of near-infrared quantum point luminescent diode according to claim 1, it is characterised in that transparent
Conductive oxide anode TOC (1) is indium doped tin oxide (ITO) or fluorine doped tin oxide (FTO).
A kind of 4. preparation method of near-infrared quantum point luminescent diode according to claim 1, it is characterised in that hole
Transport layer HTL (2) is Poly-TPD, TFB, PVK, PETDOT:PSS, NiO, MgNiO, CBP, Spiro-OMeTAD, TCTA,
MoO2Or WO3In it is one or more.
A kind of 5. preparation method of near-infrared quantum point luminescent diode according to claim 1, it is characterised in that electronics
Transport layer ETL (4) is TiO2, ZnO, SnO2, AlZnO, MgZnO, Zn2SnO4, Nb2O5, In2O3, SrTiO4, TPBi, Alq3,
It is one or more in TZA, PBD, PCBM or BCP.
A kind of 6. preparation method of near-infrared quantum point luminescent diode according to claim 1, it is characterised in that metal
Cathode CL (5) is prepared by a kind of spraying in metallic silver, gold or aluminum slurry.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111384278A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| WO2021010897A1 (en) * | 2019-07-15 | 2021-01-21 | National University Of Singapore | Near infra-red light emitting diodes |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101130692A (en) * | 2007-09-27 | 2008-02-27 | 上海交通大学 | Method of producing three fundamental quantum dot CdSeTe |
| US20100108984A1 (en) * | 2008-11-05 | 2010-05-06 | Samsung Electronics Co., Ltd. | Quantum dot electroluminescent device and method for fabricating the same |
| CN102047098A (en) * | 2008-04-03 | 2011-05-04 | Qd视光有限公司 | Light-emitting device including quantum dots |
| CN202915093U (en) * | 2012-09-28 | 2013-05-01 | 广东银禧科技股份有限公司 | LED (Light Emitting Diode) lamp with heat dissipation channel |
| CN105261709A (en) * | 2015-10-08 | 2016-01-20 | 华南理工大学 | Organic light emitting device of doping quantum dots and manufacturing method thereof |
| CN106058065A (en) * | 2016-08-08 | 2016-10-26 | Tcl集团股份有限公司 | Quantum dot LED and preparation method thereof |
-
2018
- 2018-01-08 CN CN201810014660.3A patent/CN108269939A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101130692A (en) * | 2007-09-27 | 2008-02-27 | 上海交通大学 | Method of producing three fundamental quantum dot CdSeTe |
| CN102047098A (en) * | 2008-04-03 | 2011-05-04 | Qd视光有限公司 | Light-emitting device including quantum dots |
| US20100108984A1 (en) * | 2008-11-05 | 2010-05-06 | Samsung Electronics Co., Ltd. | Quantum dot electroluminescent device and method for fabricating the same |
| CN202915093U (en) * | 2012-09-28 | 2013-05-01 | 广东银禧科技股份有限公司 | LED (Light Emitting Diode) lamp with heat dissipation channel |
| CN105261709A (en) * | 2015-10-08 | 2016-01-20 | 华南理工大学 | Organic light emitting device of doping quantum dots and manufacturing method thereof |
| CN106058065A (en) * | 2016-08-08 | 2016-10-26 | Tcl集团股份有限公司 | Quantum dot LED and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| 戴维等: "《铁合金工程技术》", 31 August 2015, 冶金工业出版社 * |
| 王蓓蓓等: "《新型量子点在食品分析检测领域中的应用》", 《食品科学》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111384278A (en) * | 2018-12-29 | 2020-07-07 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN111384278B (en) * | 2018-12-29 | 2021-07-16 | Tcl科技集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| WO2021010897A1 (en) * | 2019-07-15 | 2021-01-21 | National University Of Singapore | Near infra-red light emitting diodes |
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