CN108265268B - A kind of TiO of V doping2Film and preparation method thereof - Google Patents
A kind of TiO of V doping2Film and preparation method thereof Download PDFInfo
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- CN108265268B CN108265268B CN201810167506.XA CN201810167506A CN108265268B CN 108265268 B CN108265268 B CN 108265268B CN 201810167506 A CN201810167506 A CN 201810167506A CN 108265268 B CN108265268 B CN 108265268B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
Abstract
The invention belongs to technical field of semiconductor, and in particular to a kind of to adulterate TiO with the V of metallic conductivity and room-temperature ferromagnetic2Film and preparation method thereof.The film selects nonmagnetic V to be doped as dopant, avoids the generation of ferromagnetism cluster, while V3+There is less than d electronics, provides local magnetic moment for ferromagnetic generation.When the present invention prepares film using pulsed laser deposition, by controlling experiment condition, obtain that there is metallic conductivity and room-temperature ferromagnetic TiO2Film, carrier concentration is 5.4 × 1020‑8.0×1020cm‑3It is adjustable.This just provides possibility to regulate and control the carrier concentration in sample using electric field and then regulating and controlling its magnetism, to meet the requirement with the novel spin electric device of Good All-around Property, facilitates the energy consumption for substantially reducing device.
Description
Technical field
The invention belongs to technical field of semiconductor, and in particular to a kind of with metallic conductivity and room-temperature ferromagnetic
The TiO of V doping2Film and preparation method thereof.
Background technique
In advanced information society, magnetic material and semiconductor material are respectively played a very important role.Information
Storage is realized using the spin attribute of electronics in magnetic material, and the processing of information utilizes electronics in semiconductor material
Charge attribute is completed.Dilute magnetic semiconductor is to mix a kind of semiconductor material formed after magnetic ion, energy in the semiconductors
Simultaneously using electronics charge attribute and spin attribute, have both ferromagnetic property and semiconducting behavior, show many excellent magnetic,
Magneto-optic and magnetic electricity performance have broad application prospects in area of Spintronics.
The GaAs dilute magnetic semiconductor of Mn doping is acknowledged as a kind of intrinsic dilute magnetic semiconductor material, but it is most in
In temperature also only have 200K, far from meet electronic component use temperature requirement.Since Matsumoto in 2001 et al. head
The secondary Co doping TiO for being prepared for Curie temperature and being up to 400K2After diluted semi-conductor thin-film, people are to TiO2Based diluted magnetic semiconductor
Extensive research is carried out.But in previous research, focus concerned by people is concentrated mainly on transient metal doped TiO2It is dilute
The research of the preparation method, structure and magnetic aspect of magnetic semiconductor, and to transient metal doped TiO2Dilute magnetic semiconductor transport property
Matter (i.e. electric conductivity and carrier concentration etc.) is paid close attention to seldom, and the electric conductivity of sample is poor, and carrier concentration very little, this will lead to
People cannot be regulated and controled its carrier concentration by extra electric field and regulate and control its magnetism, to limit it in spintronics device
Application in part.
Summary of the invention
Therefore, the technical problem to be solved in the present invention is that overcoming transient metal doped TiO in the prior art2Dilute magnetic half
Conductor electric conductivity is poor, the small defect of carrier concentration, mixes to provide a kind of V with metallic conductivity and room-temperature ferromagnetic
Miscellaneous TiO2Film and preparation method thereof.
In order to solve the above technical problems, the present invention adopts the following technical scheme:
A kind of TiO of V doping2Film, the film is by Ti1-xVxO2It forms, wherein x=0.03-0.05；When room temperature, institute
The carrier concentration for stating film is 5.4 × 1020-8.0×1020cm-3。
Further, the film is Rutile structure, film thickness 30-250nm.
A kind of TiO of above-mentioned V doping2The preparation method of film, comprising the following steps:
Target preparation: with TiO2And V2O5For raw material, required Ti is prepared using solid reaction process1-xVxO2Ceramic target；
Film deposition: by the Ti1-xVxO2Ceramic target is 2.0-5.0 × 10 in oxygen partial pressure-4Under Pa, pass through arteries and veins
Impulse Photodeposition is in SrTiO3Deposition on substrate V adulterates TiO2Film.Film thickness can be controlled by control film sedimentation time
Degree.
Further, substrate temperature is 750-800 DEG C in the thin film deposition steps, and pulsed laser energy is about 1.0-
2.0J/cm2, laser frequency 5-10Hz.
Further, the average sedimentation rate in the thin film deposition steps is 0.1-0.3nm/s.
Further, detailed process is as follows for the target preparation step:
Pretreatment of raw material: by TiO2And V2O5Powder is sufficiently mixed, and grinds 4-6h, tabletting, (purity is in high purity oxygen gas atmosphere
99.999%) pre-burning is carried out in, calcined temperature is 1000-1100 DEG C, time 8-10h；
Sintering: by the material grind into powder after pre-burning, tabletting, in high purity oxygen gas atmosphere (purity 99.999%) into
Row sintering, sintering temperature are 1200-1300 DEG C, and time 12-14h obtains Ti1-xVxO2Ceramic target.
Further, the tabletting conditions in the feed pretreatment step are to suppress 20- under the pressure of 20-25MPa
30min。
Further, the condition of tabletting is to suppress 30-60min under the pressure of 30-35MPa in the sintering step.
Technical solution of the present invention has the advantages that
V provided by the invention with metallic conductivity and room-temperature ferromagnetic adulterates TiO2Film selects non magnetic first
V be doped as dopant because metal V and its oxide be all without ferromagnetism, so as to avoid ferromagnetism cluster
It generates, due to having V in film3+In the presence of providing local magnetic moment for ferromagnetic generation because it is with less than d electronics.The
Two, when the present invention prepares film using pulsed laser deposition, low oxygen partial pressure is selected in preparation process, this is because oxygen
Press in lower film that oxygen vacancy concentration is bigger, the electric conductivity of film is better, can finally obtain with metallic conductivity and
The V of room-temperature ferromagnetic adulterates TiO2Film, room temperature carrier concentration is 5.4 × 1020-8.0×1020cm-3.In addition, film
Thickness is smaller, and the defects of film can be more, and carrier concentration also can be bigger, so as to according to the partial pressure of oxygen in preparation process
With thickness to TiO2The carrier concentration of film is adjusted, this be just using electric field regulation sample in carrier concentration in turn
Regulate and control its magnetism and provide possibility, to meet the requirement with the novel spin electric device of Good All-around Property, has
Help substantially reduce the energy consumption of device.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is the X-ray diffractogram of the embodiment of the present invention 2 and embodiment 7；
Fig. 2 is the x-ray photoelectron spectroscopy figure of V2p energy level in 7 film of the embodiment of the present invention；
Fig. 3 is the x-ray photoelectron spectroscopy figure of Ti2p energy level in 7 film of the embodiment of the present invention；
Fig. 4 is the hysteresis loop figure of the embodiment of the present invention 1, embodiment 2, embodiment 3 and embodiment 4 in 300K；
Fig. 5 is the hysteresis loop figure of the embodiment of the present invention 5, embodiment 6, embodiment 7 and embodiment 8 in 300K；
Fig. 6 is that the resistivity of the embodiment of the present invention 1, embodiment 2, embodiment 3 and embodiment 4 varies with temperature curve graph；
Fig. 7 is that the resistivity of the embodiment of the present invention 5, embodiment 6, embodiment 7 and embodiment 8 varies with temperature curve graph.
Specific embodiment
It is conventional method unless otherwise specified in following embodiments.Raw material used in the embodiment, such as nothing
Specified otherwise can obtain from commercial channels.
Embodiment 1
With a thickness of the Ti of 30nm0.97V0.03O2Film
Prepare Ti0.97V0.03O2Target: (1) meter accurate in scale for being 0.97:0.03 according to the molar ratio of Ti in target and V
High-purity Ti O needed for calculating2And V2O5The quality of powder uses high Accuracy Electronic Balance precise；(2) load weighted various
After powder is sufficiently mixed in agate mortar, 5 h are firmly ground；(3) ground powder is poured into compression mold, In
25min is suppressed under the pressure of 20MPa, the sheet target suppressed is put into corundum crucible, (purity is in high purity oxygen gas atmosphere
99.999%) high temperature pre-burning is carried out in tube furnace, calcined temperature is 1000 DEG C, time 8h；(4) target after pre-burning is put
Enter in agate mortar and be firmly ground into uniform fine powder, 30min is suppressed under the pressure of 30MPa with compression mold, by what is pressed
Sheet target is put into corundum crucible, and high temperature sintering is carried out in the tube furnace of high purity oxygen gas atmosphere (purity 99.999%), is burnt
Junction temperature is 1200 DEG C, and the time is 12 h, obtains fine and close Ti0.97V0.03O2Target.
Depositing Ti0.97V0.03O2Film: pulsed laser deposition technique is used, the Ti being prepared is utilized0.97V0.03O2Ceramics
Target, in SrTiO3Deposition on substrate Ti0.97V0.03O2Film.When growth room's base vacuum is lower than 6 × 10-5When Pa, begin to warm up
Substrate starts deposition film when substrate temperature rises to 760 DEG C, and oxygen partial pressure is about 2.0 × 10 in film deposition process-4Pa,
Pulsed laser energy is about 1.2 J/cm2, laser frequency 10Hz, sedimentation time 5min obtain with a thickness of 30nm's
Ti0.97V0.03O2Film.
Embodiment 2
With a thickness of the Ti of 50nm0.97V0.03O2Film
Ti0.97V0.03O2The preparation method of target is same as Example 1.
Depositing Ti0.97V0.03O2Film: pulsed laser deposition technique is used, the Ti being prepared is utilized0.97V0.03O2Ceramics
Target, in SrTiO3Deposition on substrate Ti0.97V0.03O2Film.When growth room's base vacuum is lower than 6 × 10-5When Pa, begin to warm up
Substrate starts deposition film when substrate temperature rises to 760 DEG C, and oxygen partial pressure is about 2.3 × 10 in film deposition process-4Pa,
Pulsed laser energy is about 1.5 J/cm2, laser frequency 10Hz, sedimentation time 8min obtain with a thickness of 50nm's
Ti0.97V0.03O2Film.
Embodiment 3
With a thickness of the Ti of 135nm0.97V0.03O2Film
Ti0.97V0.03O2The preparation method of target is same as Example 1.
Depositing Ti0.97V0.03O2Film: pulsed laser deposition technique is used, the Ti being prepared is utilized0.97V0.03O2Ceramics
Target, in SrTiO3Deposition on substrate Ti0.97V0.03O2Film.When growth room's base vacuum is lower than 6 × 10-5When Pa, begin to warm up
Substrate starts deposition film when substrate temperature rises to 780 DEG C, and oxygen partial pressure is about 2.5 × 10 in film deposition process-4Pa,
Pulsed laser energy is about 1.5 J/cm2, laser frequency 10Hz, sedimentation time 13min obtain with a thickness of 135nm's
Ti0.97V0.03O2Film.
Embodiment 4
With a thickness of the Ti of 240nm0.97V0.03O2Film
Ti0.97V0.03O2The preparation method of target is same as Example 1.
Depositing Ti0.97V0.03O2Film: pulsed laser deposition technique is used, the Ti being prepared is utilized0.97V0.03O2Ceramics
Target, in SrTiO3Deposition on substrate Ti0.97V0.03O2Film.When growth room's base vacuum is lower than 6 × 10-5When Pa, begin to warm up
Substrate starts deposition film when substrate temperature rises to 800 DEG C, and oxygen partial pressure is about 2.8 × 10 in film deposition process-4Pa,
Pulsed laser energy is about 1.8 J/cm2, laser frequency 10Hz, sedimentation time 20min obtain with a thickness of 240nm's
Ti0.97V0.03O2Film.
Embodiment 5
With a thickness of the Ti of 60nm0.95V0.05O2Film
Prepare Ti0.97V0.05O2Target: (1) meter accurate in scale for being 0.95:0.05 according to the molar ratio of Ti in target and V
High-purity Ti O needed for calculating2And V2O5The quality of powder uses high Accuracy Electronic Balance precise；(2) load weighted various
After powder is sufficiently mixed in agate mortar, 6 h are firmly ground；(3) ground powder is poured into compression mold, In
30min is suppressed under the pressure of 25MPa, the sheet target suppressed is put into corundum crucible, (purity is in high purity oxygen gas atmosphere
99.999%) high temperature pre-burning is carried out in tube furnace, calcined temperature is 1100 DEG C, time 10h；(4) by the target after pre-burning
It is put into agate mortar and is firmly ground into uniform fine powder, suppress 60min under the pressure of 35MPa with compression mold, will press
Sheet target be put into corundum crucible, high temperature sintering is carried out in the tube furnace of high purity oxygen gas atmosphere (purity 99.999%),
Sintering temperature is 1250 DEG C, and the time is 14 h, obtains fine and close Ti0.95V0.05O2Target.
Depositing Ti0.97V0.05O2Film: pulsed laser deposition technique is used, the Ti being prepared is utilized0.97V0.05O2Ceramics
Target, in SrTiO3(100) deposition on substrate Ti0.97V0.05O2Film.When growth room's base vacuum is lower than 6 × 10-5When Pa, open
Begin heating substrate, starts deposition film when substrate temperature rises to 780 DEG C, in film deposition process oxygen partial pressure be about 2.6 ×
10-4Pa, pulsed laser energy are about 1.4J/cm2, laser frequency 10Hz, sedimentation time 5min obtain with a thickness of 60nm's
Ti0.97V0.05O2Film.
Embodiment 6
Prepare the Ti with a thickness of 80nm0.95V0.05O2Film
Ti0.95V0.05O2The preparation method of target is same as Example 5.
Depositing Ti0.97V0.05O2Film: pulsed laser deposition technique is used, the Ti being prepared is utilized0.97V0.05O2Ceramics
Target, in SrTiO3(100) deposition on substrate Ti0.97V0.05O2Film.When growth room's base vacuum is lower than 6 × 10-5When Pa, open
Begin heating substrate, starts deposition film when substrate temperature rises to 780 DEG C, in film deposition process oxygen partial pressure be about 3.0 ×
10-4Pa, pulsed laser energy are about 1.6J/cm2, laser frequency 10Hz, sedimentation time 8min obtain with a thickness of 80nm's
Ti0.97V0.05O2Film.
Embodiment 7
Prepare the Ti with a thickness of 100nm0.95V0.05O2Film
Ti0.95V0.05O2The preparation method of target is same as Example 5.
Depositing Ti0.97V0.05O2Film: pulsed laser deposition technique is used, the Ti being prepared is utilized0.97V0.05O2Ceramics
Target, in SrTiO3(100) deposition on substrate Ti0.97V0.05O2Film.When growth room's base vacuum is lower than 6 × 10-5When Pa, open
Begin heating substrate, starts deposition film when substrate temperature rises to 800 DEG C, in film deposition process oxygen partial pressure be about 4.0 ×
10-4Pa, pulsed laser energy are about 1.8J/cm2, laser frequency 10Hz, sedimentation time 10min obtain with a thickness of 100nm
Ti0.97V0.05O2Film.
Embodiment 8
Prepare the Ti with a thickness of 245nm0.95V0.05O2Film
Ti0.95V0.05O2The preparation method of target is same as Example 5.
Depositing Ti0.97V0.05O2Film: pulsed laser deposition technique is used, the Ti being prepared is utilized0.97V0.05O2Ceramics
Target, in SrTiO3(100) deposition on substrate Ti0.97V0.05O2Film.When growth room's base vacuum is lower than 6 × 10-5When Pa, open
Begin heating substrate, starts deposition film when substrate temperature rises to 800 DEG C, in film deposition process oxygen partial pressure be about 5.0 ×
10-4Pa, pulsed laser energy are about 2.0J/cm2, laser frequency 10Hz, sedimentation time 13min obtain with a thickness of 245nm
Ti0.97V0.05O2Film.
Comparative example 1
Prepare the Ti with a thickness of 120nm0.97V0.03O2Film
Ti0.97V0.03O2The preparation method of target is same as Example 1.
Depositing Ti0.97V0.03O2Film: pulsed laser deposition technique is used, the Ti being prepared is utilized0.97V0.03O2Ceramics
Target, in SrTiO3Deposition on substrate Ti0.97V0.03O2Film.When growth room's base vacuum is lower than 7 × 10-5When Pa, begin to warm up
Substrate starts to be passed through to vacuum chamber high purity oxygen gas (purity 99.999%) when substrate temperature rises to 800 DEG C, adjusts oxygen point
Pressure is 1.3Pa, and pulsed laser energy is about 2.5J/cm2, laser frequency 10Hz, sedimentation time 12min, obtain with a thickness of
The Ti of 120nm0.97V0.03O2Film.Obtained film has room-temperature ferromagnetic by test, but film conductivity is too poor,
Resistivity has exceeded apparatus measures range, and carrier concentration is lower than the detection limit of instrument, is unable to measure.
Comparative example 2
Prepare the Ti with a thickness of 125nm0.95V0.05O2Film
Ti0.95V0.05O2The preparation method of target is same as Example 5.
Depositing Ti0.95V0.05O2Film: pulsed laser deposition technique is used, the Ti being prepared is utilized0.95V0.05O2Ceramics
Target, in SrTiO3Deposition on substrate Ti0.95V0.05O2Film.When growth room's base vacuum is lower than 8 × 10-5When Pa, begin to warm up
Substrate starts to be passed through to vacuum chamber high purity oxygen gas (purity 99.999%) when substrate temperature rises to 800 DEG C, adjusts oxygen point
Pressure is 1.3Pa, and pulsed laser energy is about 2.8J/cm2, laser frequency 10Hz, sedimentation time 13min, obtain with a thickness of
The Ti of 125nm0.95V0.05O2Film.Obtained film has room-temperature ferromagnetic by test, but film conductivity is too poor,
Resistivity has exceeded apparatus measures range, and carrier concentration is lower than the detection limit of instrument, is unable to measure.
Performance test
Film prepared by embodiment 2 and embodiment 7 is subjected to X-ray diffraction analysis, gained spectrogram is shown in Fig. 1.In order to more
The diffraction maximum for whether having impurity phase is clearly viewed in film, we choose the logarithm of X-ray diffraction intensity as ordinate.From
Fig. 1 can be seen that Ti1-xVxO2Film is Rutile structure, does not find the diffraction maximum of V metal and the oxide of V, illustrates V
Ion enters TiO2In lattice, part is instead of Ti ion.
By Ti prepared by embodiment 70.95V0.05O2Film carries out X-ray photoelectron spectroscopic analysis, and gained spectrogram is shown in Fig. 2-
3.Fig. 2 is the x-ray photoelectron spectroscopy figure of V2p energy level in film, it can be seen from the figure that V2p3/2And V2p1/2Binding energy point
Not Wei 515.4eV and 523.1eV, illustrate V with V3+The form of ion is present in film.Fig. 3 is the X of Ti2p energy level in film
X-ray photoelectron spectroscopy X figure, it can be seen from the figure that Ti2p3/2And Ti2p1/2Binding energy be respectively 458.5eV and 464.3
EV illustrates Ti with Ti4+The form of ion is present in film.
The room temperature hysteresis loop figure of film prepared by embodiment 1, embodiment 2, embodiment 3 and embodiment 4 is shown in Fig. 4, from
Fig. 4 can be seen that V doping TiO2Film shows apparent room-temperature ferromagnetic, with a thickness of the Ti of 30nm0.97V0.03O2Film
Saturation magnetization is 1.9 μB/V。
The room temperature hysteresis loop figure of film prepared by embodiment 5, embodiment 6, embodiment 7 and embodiment 8 is shown in Fig. 5, from
Fig. 5 can be seen that the Ti of different-thickness0.95V0.05O2Film also shows that apparent room-temperature ferromagnetic, with a thickness of 60nm's
Ti0.95V0.05O2The saturation magnetization of film is 0.2 μB/V。
The resistivity of film prepared by embodiment 1- embodiment 8 varies with temperature curve graph and sees Fig. 6-7.It can be with from figure
Find out, the Ti of different-thickness1-xVxO2Film all shows metallic conductivity.
The room temperature resistivity and carrier concentration of film prepared by embodiment 1- embodiment 8 are shown in Table 1.The room temperature electricity of film
Resistance rate is about 1.2 × 10-4-6.0×10-4Ω cm, carrier concentration are about 5.4 × 1020-8.0×1020cm-3.Film it
So having preferable electric conductivity, mainly oxygen partial pressure (2.0-5.0 × 10 low with what is selected in our preparation process-4Pa)
Related, oxygen partial pressure is lower in preparation process, and oxygen vacancy concentration is bigger in film, and the electric conductivity of film is better.This point
It can be proved from comparative example 1 and 2.
The room temperature resistivity and carrier concentration of 1 film of table
| Sample | Carrier concentration/cm-3 | Room temperature resistivity/10-4Ω·cm |
| Embodiment 1 | 8.0×1020 | 1.2 |
| Embodiment 2 | 7.6×1020 | 2.4 |
| Embodiment 3 | 7.2×1020 | 3.4 |
| Embodiment 4 | 5.4×1020 | 6.0 |
| Embodiment 5 | 7.9×1020 | 1.8 |
| Embodiment 6 | 7.0×1020 | 3.7 |
| Embodiment 7 | 6.0×1020 | 4.6 |
| Embodiment 8 | 5.6×1020 | 5.2 |
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And thus amplify out it is obvious variation or
It changes still within the protection scope of the invention.
Claims (8)
1. a kind of TiO of V doping2Film, which is characterized in that the film is by Ti1-xVxO2It forms, wherein x=0.03-0.05；
When room temperature, the carrier concentration of the film is 5.4 × 1020-8.0×1020cm-3。
2. the TiO of V doping according to claim 12Film, which is characterized in that the film is Rutile structure, thin
Film thickness is 30-250nm.
3. a kind of TiO of the described in any item V doping of claim 1-22The preparation method of film, which is characterized in that including following
Step:
Target preparation: with TiO2And V2O5For raw material, Ti is prepared using solid reaction process1-xVxO2Ceramic target；
Film deposition: by the Ti1-xVxO2Ceramic target is 2.0-5.0 × 10 in oxygen partial pressure-4Under Pa, pass through pulse laser
Sedimentation is in SrTiO3The TiO of deposition on substrate V doping2Film.
4. the TiO of V doping according to claim 32The preparation method of film, which is characterized in that the thin film deposition steps
Middle substrate temperature is 750-800 DEG C, pulsed laser energy 1.0-2.0J/cm2, laser frequency 5-10Hz.
5. the TiO of V doping according to claim 32The preparation method of film, which is characterized in that the thin film deposition steps
In average sedimentation rate 0.1-0.3nm/s.
6. according to the TiO of the described in any item V doping of claim 3-52The preparation method of film, which is characterized in that the target
Detailed process is as follows for preparation step:
Pretreatment of raw material: by TiO2And V2O5Powder is sufficiently mixed, and grinds 4-6h, and tabletting carries out pre-burning in high purity oxygen gas atmosphere,
Calcined temperature is 1000-1100 DEG C, time 8-10h；
Sintering: by the material grind into powder after pre-burning, tabletting is sintered in high purity oxygen gas atmosphere, sintering temperature 1200-
1300 DEG C, time 12-14h obtains Ti1-xVxO2Ceramic target.
7. the TiO of V doping according to claim 62The preparation method of film, which is characterized in that the pretreatment of raw material step
Tabletting conditions in rapid are to suppress 20-30min under the pressure of 20-25MPa.
8. the TiO adulterated according to V according to claim 62The preparation method of film, which is characterized in that the sintering step
The condition of middle tabletting is to suppress 30-60min under the pressure of 30-35MPa.
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