CN108257639A - A kind of method and apparatus for improving program performance - Google Patents
A kind of method and apparatus for improving program performance Download PDFInfo
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- CN108257639A CN108257639A CN201611249262.7A CN201611249262A CN108257639A CN 108257639 A CN108257639 A CN 108257639A CN 201611249262 A CN201611249262 A CN 201611249262A CN 108257639 A CN108257639 A CN 108257639A
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- program
- drain terminal
- word line
- program address
- voltage
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
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Abstract
An embodiment of the present invention provides a kind of method and apparatus for improving program performance, method includes：Obtain program address；The distance between word line group according to where program address corresponds to wordline, drain terminal programming power end corresponding with the corresponding bit line of program address, determines target drain terminal program voltage；Each drain terminal programming power supply terminal voltage for setting nonvolatile memory is target drain terminal program voltage.The embodiment of the present invention can compensate the drain terminal series resistance pressure drop that program address corresponds to Nonvolatile memery unit, effectively increase program performance, save programming time.
Description
Technical field
The present invention relates to technical field of memory, are programmed more particularly to a kind of method for improving program performance and a kind of improve
The device of performance.
Background technology
In existing NOR Flash (flash memory), same root BL (bit line) voltage can be applied to multiple NOR flash simultaneously
The drain terminal of cell (unit).After certain root BL is selected, then have electric current on the BL and flow through.
Also there are following defects by existing NOR Flash：In the laying out pattern of NOR Flash, each NOR on same root BL
In flash cell, inevitably some NOR flash cell are nearer from drain terminal programming power end, some NOR flash
Cell is from drain terminal programming power end farther out.NOR flash cell farther out can be because of the shadow of larger drain terminal series resistance pressure drop
It rings so that the voltage for being actually added in these NOR flash cell drain terminals is decreased to VPPD-IRpara, and VPPD is drain terminal programming electricity
Source voltage terminal, IRpara are drain terminal series resistance pressure drop, greatly weaken the program performance of these NOR flash cell, are increased
Programming time.
Invention content
In view of the above problems, the embodiment of the present invention is designed to provide a kind of method for improving program performance and corresponding
A kind of device for improving program performance to solve existing NOR flash cell due to the influence of drain terminal series resistance pressure drop, is compiled
Journey poor performance, the problem of programming time is long.
To solve the above-mentioned problems, the embodiment of the invention discloses a kind of method for improving program performance, applied to non-easy
The property lost memory, the nonvolatile memory include N number of word line group, and N is the integer more than 1, the improvement program performance
Method includes the following steps：Obtain program address；Word line group according to where the program address corresponds to wordline, with the programming
Address corresponds to the distance between corresponding drain terminal programming power end of bit line, determines target drain terminal program voltage；It sets described non-easy
Each drain terminal programming power supply terminal voltage of the property lost memory is the target drain terminal program voltage.
Optionally, each wordline has number in the word line group, determines that the program address corresponds to the word where wordline
Line group, includes the following steps：Determine that the program address corresponds to the word line numbers of wordline；According to determining the word line numbers
Program address corresponds to the word line group where wordline.
Optionally, the nonvolatile memory includes the bit line of multiple serial numbers, determines that the program address corresponds to
The distance between word line group where wordline, corresponding with the corresponding bit line of program address drain terminal programming power end, including with
Lower step：Determine that the program address corresponds to the bit line number of bit line；The volume is determined according to the parity that the bit line is numbered
Journey address correspond to wordline where word line group corresponding with the corresponding bit line of program address drain terminal programming power end between away from
From.
Optionally, the determining target drain terminal program voltage, includes the following steps：When the program address corresponds to wordline institute
Word line group, the distance between corresponding with the corresponding bit line of program address drain terminal programming power end is N pre-determined distances
When, it is N voltages to determine the target drain terminal program voltage accordingly.
Optionally, each drain terminal programming power supply terminal voltage of the setting nonvolatile memory is the target drain terminal
Program voltage, including：By each drain terminal programming power end of the nonvolatile memory and the target drain terminal program voltage
End connection is provided.
To solve the above-mentioned problems, the embodiment of the invention discloses a kind of device for improving program performance, applied to non-easy
The property lost memory, the nonvolatile memory include N number of word line group, and N is the integer more than 1, the improvement program performance
Device includes：Address acquisition module, for obtaining program address；Voltage determination module, for being corresponded to according to the program address
The distance between word line group where wordline, drain terminal programming power end corresponding with the corresponding bit line of the program address, determines mesh
Mark drain terminal program voltage；Voltage setup module, for each drain terminal of the nonvolatile memory to be set to program power supply terminal voltage
For the target drain terminal program voltage.
Optionally, each wordline has number in the word line group, and the voltage determination module determines the program address
Word line group where corresponding wordline, including：Word line numbers determination unit, for determining that the program address corresponds to the wordline of wordline
Number；Word line group determination unit, for according to the word line numbers determine the program address correspond to wordline where word line group.
Optionally, the nonvolatile memory includes the bit line of multiple serial numbers, and the voltage determination module determines
The program address corresponds to the word line group where wordline, corresponding with the corresponding bit line of program address drain terminal programming power end it
Between distance, including：Bit line number determination unit, for determining that the program address corresponds to the bit line number of bit line；Distance is really
Order member, the parity for being numbered according to the bit line determine the program address correspond to wordline where word line group with it is described
Program address corresponds to the distance between corresponding drain terminal programming power end of bit line.
Optionally, the voltage determination module determines target drain terminal program voltage, including：Voltage determination unit, for working as
The program address corresponds to the word line group where wordline, corresponding with the corresponding bit line of program address drain terminal programming power end it
Between distance be N pre-determined distances when, accordingly determine the target drain terminal program voltage be N voltages.
Optionally, the voltage setup module includes：Connection unit, for by each drain terminal of the nonvolatile memory
Programming power end is connect with the offer end of the target drain terminal program voltage.
The embodiment of the present invention includes advantages below：After program address is obtained, where determining that program address corresponds to wordline
The distance between word line group drain terminal programming power end corresponding with the corresponding bit line of program address, and target leakage is determined according to the distance
Program voltage is held, and then each drain terminal of nonvolatile memory is set to program power supply terminal voltage as target drain terminal program voltage, i.e.,
Compensation program address can be achieved to correspond between nonvolatile memory (such as NOR flash) cell and drain terminal programming power end
Drain terminal series resistance pressure drop, effectively increases the program performance of nonvolatile memory cell, saves programming time.
Description of the drawings
Fig. 1 is a kind of step flow chart of the embodiment of the method for improvement program performance of the present invention；
Fig. 2 is the step flow chart of another embodiment of the method for improving program performance of the present invention；
Fig. 3 is a kind of structure diagram of the device embodiment of improvement program performance of the present invention；
Fig. 4 is the structure diagram of another device embodiment for improving program performance of the present invention.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
Embodiment one
With reference to Fig. 1, a kind of step flow chart of the embodiment of the method for improvement program performance of the present invention, the improvement are shown
The method of program performance can be applied to include nonvolatile memory (such as NAND flash, the NOR of N number of word line group
Flash etc.), N is the integer more than 1, and the method for improving program performance specifically may include steps of：
Step S10 obtains program address.
Step S20, the word line group according to where program address corresponds to wordline, drain terminal corresponding with the corresponding bit line of program address
The distance between power end is programmed, determines target drain terminal program voltage.
Program address corresponds to wordline and corresponds to the corresponding words of nonvolatile memory cell for program address in step S20
Line, program address correspond to bit line and correspond to the corresponding bit lines of nonvolatile memory cell, therefore, step S20 for program address
In distance can be approximately considered be that program address corresponds to the distance between nonvolatile memory cell and drain terminal programming power end.
Step S30 sets each drain terminal of nonvolatile memory to program power supply terminal voltage as target drain terminal program voltage.
Since distance of the target drain terminal program voltage in step S20 determines, i.e. target drain terminal program voltage and step
Distance in S20 is corresponding, and each drain terminal programming power supply terminal voltage of step S30 setting nonvolatile memories is programmed for target drain terminal
Voltage, you can realize that compensation program address is corresponded between nonvolatile memory cell and drain terminal programming power end caused by distance
Drain terminal series resistance pressure drop.
The embodiment of the present invention one includes advantages below：After program address is obtained, determine that program address corresponds to wordline place
The distance between word line group corresponding with the corresponding bit line of program address drain terminal programming power end, and according to the determining target of the distance
Drain terminal program voltage, and then each drain terminal of nonvolatile memory is set to program power supply terminal voltage as target drain terminal program voltage,
Compensation program address can be realized corresponds to nonvolatile memory cell and drain terminal and program drain terminal series resistance between power end
Pressure drop effectively increases the program performance of nonvolatile memory cell, saves programming time.
Embodiment two
With reference to Fig. 2, the step flow chart of another embodiment of the method for improving program performance of the present invention is shown, this changes
The method of kind program performance can be applied to the nonvolatile memory for including N number of word line group, and N is the integer more than 1, word line group
In each wordline can have number, nonvolatile memory multiple bit line serial numbers in including.Preferably, N is even number.
With reference to Fig. 2, the method for the improvement program performance specifically may include steps of：
Step S10 obtains program address.
Step S20, the word line group according to where program address corresponds to wordline, drain terminal corresponding with the corresponding bit line of program address
The distance between power end is programmed, determines target drain terminal program voltage.
Optionally, in one embodiment of the invention, with reference to Fig. 2, step S20 determines that program address corresponds to wordline place
Word line group, may comprise steps of：
Step S21 determines that program address corresponds to the word line numbers of wordline.
Step S22, according to word line numbers determine program address correspond to wordline where word line group.
Wherein, step S22 can inquire the number of wordline in each word line group according to word line numbers, to determine program address pair
Answer the word line group where wordline.
Optionally, in one embodiment of the invention, with reference to Fig. 2, step S20 determines that program address corresponds to wordline place
Word line group, the distance between corresponding with the corresponding bit line of program address drain terminal programming power end may comprise steps of：
Step S23 determines that program address corresponds to the bit line number of bit line.
Step S24, according to the parity that bit line is numbered determine program address corresponds to wordline where word line group and programmatically
Location corresponds to the distance between corresponding drain terminal programming power end of bit line.
Where it is assumed that the drain terminal programming power end of each nonvolatile memory cell is distributed in nonvolatile memory
Side and downside, bit line number are that the bit line of even number is connected with the drain terminal of upside programming power end, and bit line number is the bit line of odd number
It is connected with the drain terminal programming power end of downside.When the bit line number that program address corresponds to bit line is even number, program address corresponds to
For word line group where wordline closer to upside, the word line group where program address corresponds to wordline is corresponding to the corresponding bit line of program address
Drain terminal programming the distance between power end it is smaller, program address corresponds to word line group where wordline closer to downside, programmatically
The distance between word line group corresponding with the corresponding bit line of program address drain terminal programming power end where location corresponds to wordline is bigger；When
Program address corresponds to the bit line number of bit line when being odd number, and program address corresponds to word line group where wordline closer to downside, volume
Word line group drain terminal corresponding with the corresponding bit line of program address where journey address corresponds to wordline programs the distance between power end more
Small, program address corresponds to word line group where wordline closer to upside, and program address corresponds to the word line group and programming where wordline
It is bigger that address corresponds to the distance between the corresponding drain terminal programming power end of bit line.
Optionally, in one embodiment of the invention, target drain terminal program voltage is determined with reference to Fig. 2, step S20, it can
To include the following steps：
Step S25, the word line group where program address corresponds to wordline, drain terminal corresponding with the corresponding bit line of program address are compiled
When the distance between journey power end is N pre-determined distances, determining target drain terminal program voltage is N voltages accordingly.
Specifically, it is assumed that N 4, i.e. nonvolatile memory include 4 word line groups (the first word line group, the second word line group,
Third word line group, the 4th word line group), 4 word line groups are sequentially distributed from downside to upside, each non-volatile in nonvolatile memory
Property memory cell drain terminal programming power end be distributed in the upper side and lower side, bit line number is the bit line of even number and the drain terminal of upside
Programming power end is connected, and bit line number is that the bit line of odd number is connected with the drain terminal of downside programming power end.
If the bit line number that program address corresponds to bit line is odd number, the word line group where program address corresponds to wordline is
During the first word line group, N pre-determined distances are the first pre-determined distance in step S25, N voltages are first voltage；Work as program address
When word line group where corresponding wordline is the second word line group, N pre-determined distances are the second pre-determined distance, N voltages in step S25
For second voltage；When the word line group where program address corresponds to wordline is third word line group, N pre-determined distances in step S25
It is tertiary voltage for third pre-determined distance, N voltages；Word line group where program address corresponds to wordline is the 4th word line group
When, N pre-determined distances are the 4th pre-determined distance in step S25, N voltages are the 4th voltage.
If the bit line number that program address corresponds to bit line is even number, the word line group where program address corresponds to wordline is
During four word line groups, N pre-determined distances are the first pre-determined distance in step S25, N voltages are first voltage；Work as program address
When word line group where corresponding wordline is third word line group, N pre-determined distances are the second pre-determined distance, N voltages in step S25
For second voltage；When the word line group where program address corresponds to wordline is the second word line group, N pre-determined distances in step S25
It is tertiary voltage for third pre-determined distance, N voltages；Word line group where program address corresponds to wordline is the first word line group
When, N pre-determined distances are the 4th pre-determined distance in step S25, N voltages are the 4th voltage.
Wherein, the 4th pre-determined distances of first pre-determined distance ＜ the second pre-determined distance ＜ third pre-determined distances ＜, first voltage
The 4th voltages of ＜ second voltage ＜ tertiary voltages ＜.
Step S30 sets each drain terminal of nonvolatile memory to program power supply terminal voltage as target drain terminal program voltage.
Optionally, in one embodiment of the invention, each leakage of nonvolatile memory is set with reference to Fig. 2, step S30
End programming power supply terminal voltage is target drain terminal program voltage, can be included：
Step S31 provides each drain terminal of nonvolatile memory programming power end and target drain terminal program voltage to end
Connection.
In one embodiment of the invention, the offer end of target drain terminal program voltage can be N number of, N number of target leakage
The offer end for holding program voltage can be to be generated after being divided to the original drain terminal program voltage of nonvolatile memory.This
When, step S31 can by single pole multiple throw or other means by target drain terminal program voltage provide end with it is non-volatile
Each drain terminal programming power end of memory is electrically connected.
The embodiment of the present invention two includes advantages below：After program address is obtained, the word of wordline is corresponded to according to program address
Line is numbered, and determines that program address corresponds to the word line group where wordline and corresponds to the bit line number of bit line very according to program address
Idol, determine program address correspond to wordline where word line group corresponding with the corresponding bit line of program address drain terminal programming power end it
Between distance, and then according to the distance determining target drain terminal program voltage accordingly, finally by each leakage of nonvolatile memory
The offer end of end programming power end and target drain terminal program voltage is attached, you can it is non-volatile to realize that compensation program address corresponds to
Property memory cell and drain terminal programming power end between drain terminal series resistance pressure drop, effectively increase nonvolatile memory
The program performance of cell, saves programming time.
It should be noted that for embodiment of the method, in order to be briefly described, therefore it is all expressed as to a series of action group
It closes, but those skilled in the art should know, the embodiment of the present invention is not limited by described sequence of movement, because according to
According to the embodiment of the present invention, certain steps may be used other sequences or be carried out at the same time.Secondly, those skilled in the art also should
Know, embodiment described in this description belongs to preferred embodiment, and the involved action not necessarily present invention is implemented
Necessary to example.
Embodiment three
With reference to Fig. 3, a kind of structure diagram of the device embodiment of improvement program performance of the present invention is shown, which compiles
The device of Cheng Xingneng can be applied to the nonvolatile memory for including N number of word line group, and N is the integer more than 1, improves programmatic
The device of energy can specifically include following module：
Address acquisition module 10, for obtaining program address.
Voltage determination module 20, for the word line group where corresponding to wordline according to program address, position corresponding with program address
The distance between corresponding drain terminal programming power end of line, determines target drain terminal program voltage.
Voltage setup module 30 is target drain terminal for setting each drain terminal of nonvolatile memory programming power supply terminal voltage
Program voltage.
The embodiment of the present invention three includes advantages below：After program address is obtained, determine that program address corresponds to wordline place
The distance between word line group corresponding with the corresponding bit line of program address drain terminal programming power end, and according to the determining target of the distance
Drain terminal program voltage, and then each drain terminal of nonvolatile memory is set to program power supply terminal voltage as target drain terminal program voltage,
Compensation program address can be realized corresponds to nonvolatile memory cell and drain terminal and program drain terminal series resistance between power end
Pressure drop effectively increases the program performance of nonvolatile memory cell, saves programming time.
Example IV
With reference to Fig. 4, the structure diagram of another device embodiment for improving program performance of the present invention, the improvement are shown
The device of program performance can be applied to the nonvolatile memory for including N number of word line group, and N is the integer more than 1, in word line group
Each wordline can have number, nonvolatile memory multiple bit line serial numbers in including.Preferably, N is even number.
With reference to Fig. 4, the device of the improvement program performance can specifically include following module：
Address acquisition module 10, for obtaining program address.
Voltage determination module 20, for the word line group where corresponding to wordline according to program address, position corresponding with program address
The distance between corresponding drain terminal programming power end of line, determines target drain terminal program voltage.
Voltage setup module 30 is target drain terminal for setting each drain terminal of nonvolatile memory programming power supply terminal voltage
Program voltage.
Optionally, in one embodiment of the invention, with reference to Fig. 4, voltage determination module 20 determines that program address corresponds to
Word line group where wordline can include：
Word line numbers determination unit 21, for determining that program address corresponds to the word line numbers of wordline.
Word line group determination unit 22, for according to word line numbers determine program address correspond to wordline where word line group.
Optionally, in one embodiment of the invention, with reference to Fig. 4, voltage determination module 20 determines that program address corresponds to
The distance between word line group where wordline, drain terminal programming power end corresponding with the corresponding bit line of program address, can include：
Bit line number determination unit 23, for determining that program address corresponds to the bit line number of bit line.
Distance determining unit 24, the parity for being numbered according to bit line determine program address correspond to wordline where wordline
The distance between group drain terminal programming power end corresponding with the corresponding bit line of program address.
Optionally, in one embodiment of the invention, with reference to Fig. 4, voltage determination module 20 determines that target drain terminal programs
Voltage can include：
Voltage determination unit 25, for working as the word line group where program address corresponds to wordline, bit line corresponding with program address
When the distance between corresponding drain terminal programming power end is N pre-determined distances, determining target drain terminal program voltage is N accordingly
Voltage.
Optionally, in one embodiment of the invention, with reference to Fig. 4, voltage setup module 30 can include：
Connection unit 31, for each drain terminal of nonvolatile memory to be programmed power end and target drain terminal program voltage
End connection is provided.
The embodiment of the present invention four includes advantages below：After program address is obtained, the word of wordline is corresponded to according to program address
Line is numbered, and determines that program address corresponds to the word line group where wordline and corresponds to the bit line number of bit line very according to program address
Idol, determine program address correspond to wordline where word line group corresponding with the corresponding bit line of program address drain terminal programming power end it
Between distance, and then according to the distance determining target drain terminal program voltage accordingly, finally by each leakage of nonvolatile memory
The offer end of end programming power end and target drain terminal program voltage is attached, you can it is non-volatile to realize that compensation program address corresponds to
Property memory cell and drain terminal programming power end between drain terminal series resistance pressure drop, effectively increase nonvolatile memory
The program performance of cell, saves programming time.
For device embodiment, since it is basicly similar to embodiment of the method, so description is fairly simple, it is related
Part illustrates referring to the part of embodiment of the method.
Each embodiment in this specification is described by the way of progressive, the highlights of each of the examples are with
The difference of other embodiment, just to refer each other for identical similar part between each embodiment.
It should be understood by those skilled in the art that, the embodiment of the embodiment of the present invention can be provided as method, apparatus or calculate
Machine program product.Therefore, the embodiment of the present invention can be used complete hardware embodiment, complete software embodiment or combine software and
The form of the embodiment of hardware aspect.Moreover, the embodiment of the present invention can be used one or more wherein include computer can
With in the computer-usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) of program code
The form of the computer program product of implementation.
The embodiment of the present invention be with reference to according to the method for the embodiment of the present invention, terminal device (system) and computer program
The flowchart and/or the block diagram of product describes.It should be understood that flowchart and/or the block diagram can be realized by computer program instructions
In each flow and/or block and flowchart and/or the block diagram in flow and/or box combination.These can be provided
Computer program instructions are set to all-purpose computer, special purpose computer, Embedded Processor or other programmable data processing terminals
Standby processor is to generate a machine so that is held by the processor of computer or other programmable data processing terminal equipments
Capable instruction generation is used to implement in one flow of flow chart or multiple flows and/or one box of block diagram or multiple boxes
The device for the function of specifying.
These computer program instructions, which may also be stored in, can guide computer or other programmable data processing terminal equipments
In the computer-readable memory to work in a specific way so that the instruction being stored in the computer-readable memory generates packet
The manufacture of command device is included, which realizes in one flow of flow chart or multiple flows and/or one side of block diagram
The function of being specified in frame or multiple boxes.
These computer program instructions can be also loaded into computer or other programmable data processing terminal equipments so that
Series of operation steps are performed on computer or other programmable terminal equipments to generate computer implemented processing, thus
The instruction offer performed on computer or other programmable terminal equipments is used to implement in one flow of flow chart or multiple flows
And/or specified in one box of block diagram or multiple boxes function the step of.
Although the preferred embodiment of the embodiment of the present invention has been described, those skilled in the art once know base
This creative concept can then make these embodiments other change and modification.So appended claims are intended to be construed to
Including preferred embodiment and fall into all change and modification of range of embodiment of the invention.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, term " comprising ", "comprising" or its any other variant meaning
Covering non-exclusive inclusion, so that process, method, article or terminal device including a series of elements are not only wrapped
Those elements are included, but also including other elements that are not explicitly listed or are further included as this process, method, article
Or the element that terminal device is intrinsic.In the absence of more restrictions, it is wanted by what sentence "including a ..." limited
Element, it is not excluded that also there are other identical elements in the process including the element, method, article or terminal device.
Method to a kind of improvement program performance provided by the present invention and a kind of device for improving program performance above, into
It has gone and has been discussed in detail, specific case used herein is expounded the principle of the present invention and embodiment, implements above
The explanation of example is merely used to help understand the method and its core concept of the present invention；Meanwhile for the general technology people of this field
Member, thought according to the present invention, there will be changes in specific embodiments and applications, in conclusion this explanation
Book content should not be construed as limiting the invention.
Claims (10)
1. a kind of method for improving program performance, applied to nonvolatile memory, which is characterized in that the non-volatile memories
Device includes N number of word line group, and N is the integer more than 1, and the method for improving program performance includes the following steps：
Obtain program address；
Word line group according to where the program address corresponds to wordline, drain terminal programming corresponding with the corresponding bit line of the program address
The distance between power end determines target drain terminal program voltage；
Each drain terminal of the nonvolatile memory is set to program power supply terminal voltage as the target drain terminal program voltage.
2. according to the method described in claim 1, it is characterized in that, each wordline determines institute with number in the word line group
It states program address and corresponds to word line group where wordline, include the following steps：
Determine that the program address corresponds to the word line numbers of wordline；
According to the word line numbers determine the program address correspond to wordline where word line group.
3. according to the method described in claim 1, it is characterized in that, the nonvolatile memory includes multiple serial numbers
Bit line determines that the program address corresponds to the word line group where wordline, and drain terminal corresponding with the corresponding bit line of the program address is compiled
The distance between journey power end, includes the following steps：
Determine that the program address corresponds to the bit line number of bit line；
According to the bit line number parity determine the program address corresponds to wordline where word line group and it is described programmatically
Location corresponds to the distance between corresponding drain terminal programming power end of bit line.
4. according to the method described in claim 1, it is characterized in that, the determining target drain terminal program voltage, including following step
Suddenly：
Word line group where the program address corresponds to wordline, drain terminal programming electricity corresponding with the corresponding bit line of the program address
When the distance between source is N pre-determined distances, it is N voltages to determine the target drain terminal program voltage accordingly.
5. according to the method described in claim 1, it is characterized in that, each drain terminal of the setting nonvolatile memory is compiled
Journey power supply terminal voltage is the target drain terminal program voltage, including：
Each drain terminal programming power end of the nonvolatile memory and the end that provides of the target drain terminal program voltage are connected.
6. a kind of device for improving program performance, applied to nonvolatile memory, which is characterized in that the non-volatile memories
Device includes N number of word line group, and N is the integer more than 1, and the device for improving program performance includes：
Address acquisition module, for obtaining program address；
Voltage determination module, it is corresponding with the program address for the word line group where corresponding to wordline according to the program address
The distance between corresponding drain terminal programming power end of bit line, determines target drain terminal program voltage；
Voltage setup module, for each drain terminal of nonvolatile memory programming power supply terminal voltage to be set to be leaked for the target
Hold program voltage.
7. device according to claim 6, which is characterized in that each wordline has number, the electricity in the word line group
Pressure determining module determines that the program address corresponds to the word line group where wordline, including：
Word line numbers determination unit, for determining that the program address corresponds to the word line numbers of wordline；
Word line group determination unit, for according to the word line numbers determine the program address correspond to wordline where word line group.
8. device according to claim 6, which is characterized in that the nonvolatile memory includes multiple serial numbers
Bit line, the voltage determination module determines that the program address corresponds to the word line group where wordline, corresponding with the program address
The distance between corresponding drain terminal programming power end of bit line, including：
Bit line number determination unit, for determining that the program address corresponds to the bit line number of bit line；
Distance determining unit, the parity for being numbered according to the bit line determine the program address correspond to wordline where word
The distance between line group drain terminal programming power end corresponding with the corresponding bit line of the program address.
9. device according to claim 6, which is characterized in that the voltage determination module determines target drain terminal programming electricity
Pressure, including：
Voltage determination unit, for working as the word line group where the program address corresponds to wordline, position corresponding with the program address
When the distance between corresponding drain terminal programming power end of line is N pre-determined distances, the target drain terminal programming electricity is determined accordingly
It presses as N voltages.
10. device according to claim 6, which is characterized in that the voltage setup module includes：
Connection unit, for each drain terminal of the nonvolatile memory to be programmed power end and the target drain terminal program voltage
Offer end connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611249262.7A CN108257639B (en) | 2016-12-29 | 2016-12-29 | Method and device for improving programming performance |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611249262.7A CN108257639B (en) | 2016-12-29 | 2016-12-29 | Method and device for improving programming performance |
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| Publication Number | Publication Date |
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| CN108257639A true CN108257639A (en) | 2018-07-06 |
| CN108257639B CN108257639B (en) | 2020-08-07 |
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| CN110718257A (en) * | 2018-07-11 | 2020-01-21 | 西安格易安创集成电路有限公司 | Voltage bias circuit and method |
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