CN108255027A - A kind of photoresist cleaning solution - Google Patents
A kind of photoresist cleaning solution Download PDFInfo
- Publication number
- CN108255027A CN108255027A CN201611231304.4A CN201611231304A CN108255027A CN 108255027 A CN108255027 A CN 108255027A CN 201611231304 A CN201611231304 A CN 201611231304A CN 108255027 A CN108255027 A CN 108255027A
- Authority
- CN
- China
- Prior art keywords
- cleaning solution
- photoresist cleaning
- photoresist
- hydramine
- hydroxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 53
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 39
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 21
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 claims abstract description 10
- 150000002989 phenols Chemical class 0.000 claims abstract description 10
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 6
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 6
- 239000003960 organic solvent Substances 0.000 claims abstract description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 18
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N dimethyl sulfoxide Natural products CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 9
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 5
- 150000003457 sulfones Chemical class 0.000 claims description 5
- 150000003462 sulfoxides Chemical group 0.000 claims description 5
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 claims description 4
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 claims description 4
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical compound O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 claims description 4
- SRBFZHDQGSBBOR-IOVATXLUSA-N D-xylopyranose Chemical compound O[C@@H]1COC(O)[C@H](O)[C@H]1O SRBFZHDQGSBBOR-IOVATXLUSA-N 0.000 claims description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
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- SRBFZHDQGSBBOR-UHFFFAOYSA-N beta-D-Pyranose-Lyxose Natural products OC1COC(O)C(O)C1O SRBFZHDQGSBBOR-UHFFFAOYSA-N 0.000 claims description 4
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 claims description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical compound CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 claims description 4
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 claims description 4
- 150000004040 pyrrolidinones Chemical class 0.000 claims description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 claims description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 150000001896 cresols Chemical class 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- 229940043237 diethanolamine Drugs 0.000 claims description 3
- -1 galactolipin Chemical compound 0.000 claims description 3
- 125000002951 idosyl group Chemical class C1([C@@H](O)[C@H](O)[C@@H](O)[C@H](O1)CO)* 0.000 claims description 3
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 3
- 150000002576 ketones Chemical class 0.000 claims description 3
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- MUVQKFGNPGZBII-UHFFFAOYSA-N 1-anthrol Chemical compound C1=CC=C2C=C3C(O)=CC=CC3=CC2=C1 MUVQKFGNPGZBII-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 claims description 2
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical class NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 2
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-WHZQZERISA-N D-aldose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-WHZQZERISA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-IVMDWMLBSA-N D-allopyranose Chemical compound OC[C@H]1OC(O)[C@H](O)[C@H](O)[C@@H]1O WQZGKKKJIJFFOK-IVMDWMLBSA-N 0.000 claims description 2
- FBPFZTCFMRRESA-KAZBKCHUSA-N D-altritol Chemical compound OC[C@@H](O)[C@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KAZBKCHUSA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 claims description 2
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- UNXHWFMMPAWVPI-QWWZWVQMSA-N D-threitol Chemical compound OC[C@@H](O)[C@H](O)CO UNXHWFMMPAWVPI-QWWZWVQMSA-N 0.000 claims description 2
- ZAQJHHRNXZUBTE-UHFFFAOYSA-N D-threo-2-Pentulose Natural products OCC(O)C(O)C(=O)CO ZAQJHHRNXZUBTE-UHFFFAOYSA-N 0.000 claims description 2
- YTBSYETUWUMLBZ-QWWZWVQMSA-N D-threose Chemical compound OC[C@@H](O)[C@H](O)C=O YTBSYETUWUMLBZ-QWWZWVQMSA-N 0.000 claims description 2
- ZAQJHHRNXZUBTE-WUJLRWPWSA-N D-xylulose Chemical compound OC[C@@H](O)[C@H](O)C(=O)CO ZAQJHHRNXZUBTE-WUJLRWPWSA-N 0.000 claims description 2
- 241000360590 Erythrites Species 0.000 claims description 2
- UNXHWFMMPAWVPI-UHFFFAOYSA-N Erythritol Natural products OCC(O)C(O)CO UNXHWFMMPAWVPI-UHFFFAOYSA-N 0.000 claims description 2
- 229930091371 Fructose Natural products 0.000 claims description 2
- 239000005715 Fructose Substances 0.000 claims description 2
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 claims description 2
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 2
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- 229930195725 Mannitol Natural products 0.000 claims description 2
- JPYHHZQJCSQRJY-UHFFFAOYSA-N Phloroglucinol Natural products CCC=CCC=CCC=CCC=CCCCCC(=O)C1=C(O)C=C(O)C=C1O JPYHHZQJCSQRJY-UHFFFAOYSA-N 0.000 claims description 2
- JVWLUVNSQYXYBE-UHFFFAOYSA-N Ribitol Natural products OCC(C)C(O)C(O)CO JVWLUVNSQYXYBE-UHFFFAOYSA-N 0.000 claims description 2
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- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 2
- HMFHBZSHGGEWLO-UHFFFAOYSA-N alpha-D-Furanose-Ribose Natural products OCC1OC(O)C(O)C1O HMFHBZSHGGEWLO-UHFFFAOYSA-N 0.000 claims description 2
- PYMYPHUHKUWMLA-WDCZJNDASA-N arabinose Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)C=O PYMYPHUHKUWMLA-WDCZJNDASA-N 0.000 claims description 2
- GGNQRNBDZQJCCN-UHFFFAOYSA-N benzene-1,2,4-triol Chemical compound OC1=CC=C(O)C(O)=C1 GGNQRNBDZQJCCN-UHFFFAOYSA-N 0.000 claims description 2
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- 229950011260 betanaphthol Drugs 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- UNXHWFMMPAWVPI-ZXZARUISSA-N erythritol Chemical compound OC[C@H](O)[C@H](O)CO UNXHWFMMPAWVPI-ZXZARUISSA-N 0.000 claims description 2
- 229940031098 ethanolamine Drugs 0.000 claims description 2
- FBPFZTCFMRRESA-GUCUJZIJSA-N galactitol Chemical compound OC[C@H](O)[C@@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-GUCUJZIJSA-N 0.000 claims description 2
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- 235000011187 glycerol Nutrition 0.000 claims description 2
- WJLUBOLDZCQZEV-UHFFFAOYSA-M hexadecyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCCCCCCCCCCCCCCC[N+](C)(C)C WJLUBOLDZCQZEV-UHFFFAOYSA-M 0.000 claims description 2
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- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- LKDRXBCSQODPBY-JDJSBBGDSA-N D-allulose Chemical compound OCC1(O)OC[C@@H](O)[C@@H](O)[C@H]1O LKDRXBCSQODPBY-JDJSBBGDSA-N 0.000 description 1
- FBPFZTCFMRRESA-ZXXMMSQZSA-N D-iditol Chemical compound OC[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-ZXXMMSQZSA-N 0.000 description 1
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical class CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to a kind of photoresist cleaning solution, concentration includes following components by mass percentage：I. quaternary ammonium hydroxide 0.1 6%；Ii. hydramine 0.1 10%；Iii. polyalcohol 0.2~50%；Iv. phenolic compound 0.1~5%；V. surplus is organic solvent.Not silane-containing in the cleaning solution of the present invention, it is while the photoresist residue on effectively removing wafer, for the base material such as no corrosions such as metallic copper, aluminium, titanium, tungsten, gold, there is removal ability to copper oxide, have a good application prospect in fields such as cleaning semiconductor chips.
Description
Technical field
The present invention relates to field of semiconductor fabrication processes more particularly to a kind of photoresist cleaning solutions.
Background technology
In general, in semiconductor fabrication process, need to form the mask of photoresist on the surface of some materials, and pass through
Exposure technology carries out the transfer of figure.But after the figure needed, before carrying out next process, need to peel off
Remaining photoresist.Moreover, often requiring that in this process unwanted photoresist is removed completely, while cannot corrode any
Base material.
At present, photoresist cleaning solution is mainly made of polar organic solvent, highly basic and/or water etc., by by semiconductor die
Piece immerses in cleaning solution or rinses semiconductor wafer using cleaning solution, removes the photoresist of semiconductor die on piece.Such as
JP1998239865 discloses a kind of cleaning solution of Aquo System, and composition is tetramethylammonium hydroxide (TMAH), dimethyl Asia
Sulfone (DMSO), 1,3 '-dimethyl -2- imidazolidinones (DMI) and water, chip is immersed in the cleaning solution, is removed at 50~100 DEG C
20 μm or more of photoresist on metal and dielectric substrate is removed, it is slightly higher to the corrosion of semiconductor wafer substrate, and cannot be complete
The photoresist of full removal semiconductor die on piece, cleaning ability is insufficient；US5091103 discloses N-Methyl pyrrolidone, 1,2- third
The cleaning solution of glycol and tetramethylammonium hydroxide removes the photoetching through high temperature baked (hard bake) at 105~125 DEG C
Glue, it is characterized in that it is high not contain water, operation temperature, once cleaning solution is mixed into water, to the corrosion rate of metallic aluminium and copper on
It rises, which can be suitable for the cleaning of positive photoresist and negative photoresist simultaneously.
Moreover, with the fast development of semiconductor, the development of particularly convex ball encapsulation field, to the clear of photoetching glue residue
Requirement also corresponding raising is washed, number of pins (I/O) is more and more mainly on unit area, and the removal of photoresist also becomes more next
It is more difficult.So as to which it is that such photoresist cleaning solution makes great efforts improved privileged direction to find more efficiently photoresist cleaning solution.
In general, the cleaning ability for improving alkaline photoresist cleaning solution is mainly by improving the alkalinity of cleaning solution, choosing
It is realized with more efficiently dicyandiamide solution, raising operation temperature and extension operating time several aspects.But improve cleaning
The alkalinity and operation temperature and extension scavenging period of liquid often increase to corrosion of metal.In general, it is encapsulated in salient point
The metal that field is related to is mainly four kinds of silver, tin, lead and copper metals.Recently, in order to further reduce the cost raising yield, some
Packaging and testing manufacturer, which starts requirement photoresist cleaning solution, can also further suppress the corrosion of metallic aluminium.Therefore, it finds more effective
It is that such photoresist cleaning solution makes great efforts improved preferential side to inhibit metal erosion suppressing method and efficient photoresist removal ability
To.
Invention content
The purpose of the invention is to provide a kind of cleaning solution and its composition for effectively removing photoresist residue.The cleaning
Liquid is while the photoresist residue on effectively removing wafer, for base material such as metallic copper, aluminium, titanium, tungsten, gold etc. substantially without corruption
Erosion, has a good application prospect in fields such as cleaning semiconductor chips.
The present invention provides a kind of photoresist cleaning solution, and concentration includes following components by mass percentage：
I. quaternary ammonium hydroxide 0.1-6%；It is preferred that 0.5-3.5%；
Ii. hydramine 0.1-10%；It is preferred that 0.1-3%；
Iii. polyalcohol 0.2~50%；It is preferred that 1-30%；
Iv. phenolic compound 0.1~5%；It is preferred that 0.3-2%；
V. surplus is organic solvent.
Wherein, the quaternary ammonium hydroxide is selected from tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl hydroxide
It is one or more in ammonium, tetrabutylammonium hydroxide, cetyltrimethylammonium hydroxide and benzyltrimethylammonium hydroxide.
Wherein, the hydramine is selected from monoethanolamine, N- methylethanolamines, diethanol amine, triethanolamine, isopropanolamine, second
Base diethanol amine, N, it is one or more in N- diethyl ethylene diamines, N- (2- amino-ethyls) ethanol amine and diglycolamine.It is preferred that
Ground, the hydramine are selected from monoethanolamine and/or triethanolamine.
Wherein, the polyalcohol is selected from ethylene glycol, 1,2-PD, 1,4-butanediol, neopentyl glycol, two contracting diethyls two
Alcohol, glycerine, threose, arabinose, xylose, ribose, ribulose, xylulose, glucose, mannose, galactolipin, tower lattice
Sugar, allose, altrose, idose, talose, sorbose, psicose, fructose, threitol, erythrite, ribitol, I
It is one or more in primary sugar alcohol, xylitol, talitol, sorbierite, mannitol, iditol and galactitol.
Wherein, the phenolic compound be selected from phenol, cresols, o-cresol, p-cresol, m-cresol, hydroquinone,
1,3,5-trihydroxybenzene, hydroxyquinol, catechol, resorcinol, pyrogallol, alpha-Naphthol, betanaphthol, amino phenols, adjacent pin base phenol,
Between nitro base phenol, to pin base phenol, anthrol.
Wherein, the organic solvent is in sulfoxide, sulfone, imidazolidinone, pyrrolidones, imidazolone, amide and alcohol ether
It is one or more.Preferably, the sulfoxide is one or more in dimethyl sulfoxide (DMSO) and first ethyl-sulfoxide；The sulfone choosing
From one or more in methyl sulfone, sulfolane；The imidazolidinone is selected from 2- imidazolidinones and 1,3- dimethyl -2- imidazolidines
It is one or more in ketone；The one kind or more of the pyrrolidones in N-Methyl pyrrolidone and N- cyclohexyl pyrrolidones
Kind；The imidazolone is 1,3- dimethyl-2-imidazolinones；The amide is selected from dimethylformamide and dimethylacetylamide
In it is one or more；The alcohol ether is one or more in diethylene glycol monobutyl ether and dipropylene glycol monomethyl ether.
Compared with prior art, positive effect of the invention is：Not silane-containing in the cleaning solution of the present invention, this
The cleaning solution of invention is while the photoresist residue on effectively removing wafer, for base material such as metallic copper, aluminium, titanium, tungsten, gold etc.
No corrosion has removal ability to copper oxide.It has a good application prospect in fields such as cleaning semiconductor chips.
Specific embodiment
With reference to specific embodiment and the comparative example superiority that the present invention is further explained, wherein, the present invention is used to be tried
Agent and raw material are commercially available.By mentioned component, simply uniformly mixing can be prepared by the cleaning solution of the present invention.
The component and its content of 1 embodiment of table and comparative example
Effect example
In order to further investigate the cleaning situation of the based cleaning liquid, present invention employs following technological means：I.e. by wafer
Microballoon implantation technique convexity ball it is electroplated after the completion of the wafer containing photoresist residue, respectively immerse cleaning solution at 25 DEG C extremely
It is vibrated 30~120 minutes with about 60 revs/min of vibration frequency using constant temperature oscillator at 80 DEG C, High Purity Nitrogen is then used after rinsing
Air-blowing is done.The cleaning performance and cleaning solution of photoresist residue are as shown in table 2 to the corrosion condition of chip.
The wafer cleaning situation of 2 section Example of table
The wafer cleaning situation of 3 part comparative example of table
From table 2 it can be seen that the cleaning solution of the present invention is on the convex ball after the completion of being electroplated in wafer microballoon implantation technique
Wafer containing photoresist residue has good cleaning performance, and use temperature range is wide.
Comparative example 11-1 in the comparison of embodiment 11 with, as can be seen that in embodiment 11, selecting C2-C3 and C4- from table 3
The polyalcohol compounding of C6, content is identical with the content of polyalcohol single in comparative example 11-1, and (comparative example 11-1 only contains C4-C6
Polyalcohol does not add in C2-C3 polyalcohols), but comparative example 11-1 inhibits no embodiment 11 good the corrosion of metallic aluminium and copper, therefore
Comparative example 11-1 is conducive to the inhibition of metallic aluminium and copper corrosion with the addition of polyalcohol that embodiment 11 demonstrates C2-C3.It is similar
Ground, C4-C6 polyalcohols do not add in comparative example 11-2, on the polyalcohol for the amount not added in all being added C2-C3, other groups
Dividing the same and operating condition under the same conditions, the addition for demonstrating C4-C6 is conducive to the inhibition of metallic aluminium and copper corrosion, although
Both comparative example 11-1 and 11-2 do not find out there is significant difference with embodiment 11 to the cleaning of photoresist, and the removal of copper oxide does not have
There is significant difference, but comparative example 11-1 and 11-2 inhibits good without embodiment 11 to the corrosion of metallic aluminium and copper.By above-mentioned right
Ratio 11-1,11-2 and the effect example of embodiment 11 are it is found that C2-C3 polyalcohols and C4-C6 polyalcohols exist between the two
The effect of compounding, the two match the corrosion that can preferably inhibit metallic copper and aluminium.Pair of comparative example 11-3 and embodiment 11
Than, demonstrate C2-C3 and C4-C6 polyalcohol be all not added in the case of, copper oxide wafer on more serious to corrosion of metal
It remains.
Embodiment 7 can be seen that with comparative example 7-1,7-2,7-3 and not add in polyalcohol in comparative example 7-1, metal erosion speed
Rate rises, and cleans no influence, copper oxide remains on a small quantity.Phenolic compound is not added in comparative example 7-2, on rate of metal corrosion
It rises, cleans no influence, copper oxide remains on a small quantity.Polyalcohol and phenolic compound do not add in comparative example 7-3, metal erosion speed
Rate rises, and cleans no influence, the more residual of copper oxide.Being used in compounding for polyalcohol and phenolic compound, can effectively remove wafer
On copper oxide.
To sum up, positive effect of the invention is：The cleaning solution of the present invention is under similarity condition, in certain concentration
In the range of, by being used in compounding polyalcohol and phenolic compound, it can more effectively remove photoetching glue residue；Simultaneously for
The no corrosions such as base material such as metallic aluminium and copper, especially have copper oxide removing ability.In fields such as cleaning semiconductor chips
It has a good application prospect.
It should be noted that the embodiment of the present invention has preferable implementation, and not the present invention is made any type of
Limitation, any one skilled in the art change or are modified to possibly also with the technology contents of the disclosure above equivalent effective
Embodiment, as long as without departing from the content of technical solution of the present invention, what technical spirit according to the present invention made above example
Any modification or equivalent variations and modification, in the range of still falling within technical solution of the present invention.
Claims (9)
1. a kind of photoresist cleaning solution, which is characterized in that concentration is included with the following group the photoresist cleaning solution by mass percentage
Point：
I. quaternary ammonium hydroxide 0.1-6%；
Ii. hydramine 0.1-10%；
Iii. polyalcohol 0.2~50%；
Iv. phenolic compound 0.1~5%；
V. surplus is organic solvent.
2. photoresist cleaning solution as described in claim 1, which is characterized in that the quaternary ammonium hydroxide is selected from tetramethyl hydrogen-oxygen
Change ammonium, tetraethyl ammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, cetyltrimethylammonium hydroxide and benzyl
It is one or more in base trimethylammonium hydroxide.
3. photoresist cleaning solution as described in claim 1, which is characterized in that the hydramine is selected from monoethanolamine, N- methyl second
Hydramine, diethanol amine, triethanolamine, isopropanolamine, ethyldiethanolamine, N, N- diethyl ethylene diamines, N- (2- amino-ethyls)
It is one or more in ethanol amine and diglycolamine.
4. photoresist cleaning solution as claimed in claim 3, which is characterized in that the hydramine is selected from monoethanolamine and/or three second
Hydramine.
5. photoresist cleaning solution as described in claim 1, which is characterized in that the polyalcohol is selected from ethylene glycol, 1,2- the third two
Alcohol, 1,4-butanediol, neopentyl glycol, Diethylene Glycol, glycerine, threose, arabinose, xylose, ribose, ribulose,
Xylulose, glucose, mannose, galactolipin, Tagatose, allose, altrose, idose, talose, sorbose, A Luo ketone
Sugar, fructose, threitol, erythrite, ribitol, arabite, xylitol, talitol, sorbierite, mannitol, idose
It is one or more in alcohol and galactitol.
6. photoresist cleaning solution as described in claim 1, which is characterized in that the phenolic compound is selected from phenol, cresols, neighbour
Cresols, p-cresol, m-cresol, hydroquinone, 1,3,5-trihydroxybenzene, hydroxyquinol, catechol, even resorcinol, benzene three
Phenol, alpha-Naphthol, betanaphthol, amino phenols, neighbour sell base phenol, nitro base phenol, to pin base phenol, anthrol.
7. photoresist cleaning solution as described in claim 1, which is characterized in that the organic solvent is selected from sulfoxide, sulfone, imidazolidine
It is one or more in ketone, pyrrolidones, imidazolone, amide and alcohol ether.
8. photoresist cleaning solution as claimed in claim 7, which is characterized in that the sulfoxide is selected from dimethyl sulfoxide (DMSO) and the first and second bases
It is one or more in sulfoxide；The sulfone is one or more in methyl sulfone, sulfolane；The imidazolidinone is selected from 2- miaows
It is one or more in oxazolidone and 1,3- dimethyl -2- imidazolidinones；The pyrrolidones be selected from N-Methyl pyrrolidone and
It is one or more in N- cyclohexyl pyrrolidones；The imidazolone is 1,3- dimethyl-2-imidazolinones；The amide choosing
From one or more in dimethylformamide and dimethylacetylamide；The alcohol ether is selected from diethylene glycol monobutyl ether and dipropyl two
It is one or more in alcohol monomethyl ether.
9. the photoresist cleaning solution as described in claim 1-8 is any, which is characterized in that the quality hundred of the quaternary ammonium hydroxide
Point specific concentration is 0.5-3.5%, and the mass percent concentration of the hydramine is 0.1-3%, the mass percent of the polyalcohol
A concentration of 1-30%, the mass percent concentration of the phenolic compound is 0.3-2%.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611231304.4A CN108255027B (en) | 2016-12-28 | 2016-12-28 | Photoresist cleaning solution |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611231304.4A CN108255027B (en) | 2016-12-28 | 2016-12-28 | Photoresist cleaning solution |
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| CN108255027B CN108255027B (en) | 2024-04-12 |
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Cited By (1)
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| CN115820351A (en) * | 2022-12-19 | 2023-03-21 | 芯越微电子材料(嘉兴)有限公司 | Semiconductor wafer substrate cleaning solution composition and application method thereof |
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| CN108255027B (en) | 2024-04-12 |
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