CN108232380A - A kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer - Google Patents
A kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer Download PDFInfo
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- CN108232380A CN108232380A CN201810250529.7A CN201810250529A CN108232380A CN 108232380 A CN108232380 A CN 108232380A CN 201810250529 A CN201810250529 A CN 201810250529A CN 108232380 A CN108232380 A CN 108232380A
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- 238000012545 processing Methods 0.000 abstract description 2
- 238000005452 bending Methods 0.000 description 20
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- 238000004891 communication Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
- H01P1/20354—Non-comb or non-interdigital filters
- H01P1/20381—Special shape resonators
Abstract
The invention discloses a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexers, including dielectric-slab, the front of the dielectric-slab is set there are three rectangular microstrip structure and three input/output microstrip lines, three rectangular microstrip structures are from left to right sequentially connected, the rectangular microstrip structure on two of which input/output microstrip line and the left side connects, the rectangular microstrip structure on an other input/output microstrip line and the right connects, and the back side of the dielectric-slab is earth plate.The rectangular microstrip structure of the present invention can generate the effect of multimode, by changing the length of rectangular microstrip structure and the resonant frequency of wide control model, three input/output microstrip lines can select a wherein input/output microstrip line input, two other input/output microstrip line exports, three kinds of working conditions can be realized by combination, third-order plane micro-strip duplexer is realized, there is small, simple in structure, easy processing, have a wide range of application.
Description
Technical field
The present invention relates to a kind of duplexer, especially a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer belongs to
In wireless communication field.
Background technology
Microwave filter is transmitting terminal and the essential device of receiving terminal in Modern Communication System, it plays separation to signal
Effect, allows useful signal is as zero-decrement as possible to pass through, attenuation as big as possible inhibits it to pass through to useless signal.With
The development of wireless communication technique, the frequency band between signal is more and more narrow, this just proposes higher to the specification of wave filter and reliability
Requirement.Plane microstrip filter has that high frequency selectivity, filter with low insertion loss, power capacity be big, performance is stablized, small size, easily
In integrated the advantages that and with very high application value.The passband that many scholars generate flat filter multimode is ground
Study carefully, change separation multimode by adjusting the coupling between resonator, generate transmission zero, further improve band logical performance.
In order to reduce the size of wave filter, scholar proposes the wave filter of many types, such as the filtering of U-shaped hairpin-line resonator
Device, open-loop resonator wave filter and folding open circuit resonator filter.1972, Wolff was put forward for the first time dual-mode resonator.More
Reduce the size of wave filter using bimodulus micro-strip resonantor come more scholars.In the exploratory development of follow-up scholar, utilize
The concept of disresonance mould realizes multimode of the flat filter in transmission characteristic and transmission zero.In planar microstrip
Duplexer field other than realizing binary channels using T junction, can also use multimode resonator to realize the effect of duplex.
2006, the micro-strip duplexer of the designs such as Ruey-Beei Wu was as shown in Figure 1, input terminal generates two resonant modes
Formula, in two output terminals by the two modal cutoffs, response results are as shown in Figure 2.
Invention content
The object of the present invention is to provide a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexers, this can generate more
Fruit is imitated, has many advantages, such as that small, design is simple, easy processing, performance are good, can be good at meeting wanting for modern communication systems
It asks.
The purpose of the present invention can be reached by adopting the following technical scheme that：
A kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer, including dielectric-slab, the front of the dielectric-slab is set
There are three rectangular microstrip structure and three input/output microstrip lines, three rectangular microstrip structures are from left to right sequentially connected,
The rectangular microstrip structure on two of which input/output microstrip line and the left side connects, in addition an input/output microstrip line and the right
The connection of rectangular microstrip structure, the back side of the dielectric-slab is earth plate.
As a preferred embodiment, it is provided with gap in three rectangular microstrip structures.
Further, the gap in three rectangular microstrip structures is cross gap.
As a preferred embodiment, in three rectangular microstrip structures, the rectangular microstrip structure on the left side is micro- by first
It is connect with line with intermediate rectangular microstrip structure, intermediate rectangular microstrip structure passes through the second microstrip line and the rectangular microstrip on the right
Structure connects.
Further, first microstrip line and the second microstrip line are bent microstrip line.
As a preferred embodiment, three input/output microstrip lines use characteristic impedance as 50 ohm of micro-strip
Line.
As a preferred embodiment, three rectangular microstrip structures be from left to right followed successively by the first rectangular microstrip structure,
Second rectangular microstrip structure and third rectangular microstrip structure, three input/output microstrip lines are respectively the first input/output
Microstrip line, the second input/output microstrip line and third input/output microstrip line；
The first end of the first input/output microstrip line is located at the positive first edge of dielectric-slab, the second input/defeated
The first end for going out microstrip line is located at the positive second edge of dielectric-slab, and the first input/output microstrip line and second input/it is defeated
The second end for going out microstrip line is connect respectively with two sides of the first rectangular microstrip structure；
The first end of the third input/output microstrip line is located at the positive third edge of dielectric-slab, third input/defeated
The second end for going out microstrip line is connect with a line of third rectangular microstrip structure.
Further, the first end of the first input/output microstrip line is located at the positive left hand edge of dielectric-slab, and first
The second end of input/output microstrip line is connect with the left side of the first rectangular microstrip structure.
Further, the first end of the second input/output microstrip line is located at the positive lower edge of dielectric-slab, and second
The following connection of the second end of input/output microstrip line and the first rectangular microstrip structure.
Further, the first end of the third input/output microstrip line is located at the positive right edge of dielectric-slab, third
The second end of input/output microstrip line is connect with the right of third rectangular microstrip structure.
The present invention has following advantageous effect relative to the prior art：
1st, the present invention is provided with three rectangular microstrip structures and three input/output microstrip lines, square in the front of dielectric-slab
Shaped microstrip structure can generate the effect of multimode, by changing the length of rectangular microstrip structure and the resonant frequency of wide control model,
Three input/output microstrip lines can select a wherein input/output microstrip line input, two other input/output micro-strip
Line export, by combination can realize three kinds of working conditions, realize third-order plane micro-strip duplexer, disclosure satisfy that miniaturization,
It is highly selective, design and process the features such as simple.
2nd, the present invention can also output gap in three rectangular microstrip structures, by change rectangular microstrip structure length and
Wide and gap length carrys out the resonant frequency of control model, and can reduce spoke using the rectangular microstrip structure for outputing gap
It penetrates, reduces insertion loss.
Description of the drawings
Fig. 1 is existing bimodulus microstrip diplexer figure.
Fig. 2 is the response results figure of existing bimodulus micro-strip duplexer.
Fig. 3 is the individual layer plane diplexer structure figure that cracks of the embodiment of the present invention 1.
Fig. 4 is the Electromagnetic Simulation curve graph of the individual layer plane duplexer frequency response of cracking of the embodiment of the present invention 1.
Fig. 5 is the individual layer plane diplexer structure figure that do not crack of the embodiment of the present invention 2.
Wherein, 1- dielectric-slabs, 2- the first rectangular microstrip structures, 3- the second rectangular microstrip structures, 4- third rectangular microstrip knots
Structure, 5- gaps, the first microstrip lines of 6-, the second microstrip lines of 7-, the first bending segments of 8-, the second bending segments of 9-, 10- third bending segments,
The 4th bending segments of 11-, 12- the first input/output microstrip lines, 13- the second input/output microstrip lines, 14- third input/output
Microstrip line.
Specific embodiment
With reference to embodiment and attached drawing, the present invention is described in further detail, but embodiments of the present invention are unlimited
In this.
Embodiment 1：
As shown in figure 3, present embodiments provide a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer, the duplex
Device includes dielectric-slab 1, and there are three rectangular microstrip structure and three input/output microstrip lines, institutes for the front printing of the dielectric-slab 1
The back side for giving an account of scutum 1 is earth plate (not shown), and the earth plate is made of metal material, and metal material can be
Aluminium, iron, tin, copper, silver, gold and platinum any one or can be aluminium, iron, tin, copper, silver, the gold and platinum alloy of any one.
Three rectangular microstrip structures are respectively the first rectangular microstrip structure 2, the second rectangular microstrip structure 3 and third square
Shaped microstrip structure 4, the first rectangular microstrip structure 2, the second rectangular microstrip structure 3 and third rectangular microstrip structure 4 from left to right according to
Secondary connection, it is preferable that be provided with seam in the first rectangular microstrip structure 2, the second rectangular microstrip structure 3 and third rectangular microstrip structure 4
Gap 5, the gap 5 of the present embodiment are cross gap, the first rectangular microstrip structure 2, the second rectangular microstrip structure 3 and third rectangle
Microstrip structure 4 can generate the effect of multimode, by changing the first rectangular microstrip structure 2, the second rectangular microstrip structure 3 and third
The length of rectangular microstrip structure 4 and wide and gap 5 length carry out the resonant frequency of control model.
Further, the first rectangular microstrip structure 2 is connect by the first microstrip line 6 with the second rectangular microstrip structure 3, and second
Rectangular microstrip structure 3 by the second microstrip line 7 with third rectangular microstrip structure 4 by being connect, it is preferable that 6 He of the first microstrip line
Second microstrip line 7 is bent microstrip line, and the first microstrip line 6 includes connected the first bending segment 8 and the second bending segment 9, the
Two microstrip lines 7 include connected 10 and the 4th bending segment 11 of third bending segment, the first bending segment 8 and the first rectangular microstrip structure 2
The right connected with top, the second bending segment 9 is connect with the left side of the second rectangular microstrip structure 3 and top, the first bending segment 8 with
The part of the right connection of first rectangular microstrip structure 2 and the second bending segment 9 are connect with the left side of the second rectangular microstrip structure 3
Part form an arc that Open Side Down, the right of third bending segment 10 and the second rectangular microstrip structure 3 and connect below,
It the left side of 4th bending segment 11 and third rectangular microstrip structure 4 and connect below, 10 and second rectangular microstrip knot of third bending segment
The part that the part of the right connection of structure 3 and the 4th bending segment 11 are connect with the left side of third rectangular microstrip structure 4 forms one
The arc of a opening upwards.
It will be appreciated by persons skilled in the art that the right of the first bending segment 8 and the first rectangular microstrip structure 2 can be made
With following connection, the left side of the second bending segment 9 and the second rectangular microstrip structure 3 and it connect below, and third bending segment 10 and the
The right of two rectangular microstrip structures 3 is connected with top, and the 4th bending segment 11 connects with the left side of third rectangular microstrip structure 4 and top
It connects.
Three input/output microstrip lines use characteristic impedance, and for 50 ohm of microstrip line, three input/output are micro-
Band line is respectively the first input/output microstrip line 12, the second input/output microstrip line 13 and third input/output microstrip line 14.
In the present embodiment, the first input/output microstrip line 12, the second input/output microstrip line 13 and third input/it is defeated
It is rectangular configuration to go out microstrip line 14, has first end and the second end opposite with first end, the first input/output microstrip line 12
First end be located at 1 positive left hand edge of dielectric-slab, as the first input/output end port Port1, the first input/output is micro-
Second end with line 12 is connect with the left side of the first rectangular microstrip structure 2, and the first end of the second input/output microstrip line 13 is located at
1 positive lower edge of dielectric-slab, as the second input/output end port Port2, the second of the second input/output microstrip line 13
End and the following connection of the first rectangular microstrip structure 2, the first end of third input/output microstrip line 14 are located at 1 front of dielectric-slab
Right edge, the second end of third input/output microstrip line 14 connect with the right of third rectangular microstrip structure 4.
It is situated between it will be appreciated by persons skilled in the art that can be located at the first end of the second input/output microstrip line 13
1 positive upper edge of scutum, and second end is connect with the top of the first rectangular microstrip structure 2, the first input/output microstrip line
12 and second the position of input/output microstrip line 13 can also exchange；It can make the first end of third input/output microstrip line 14
Positioned at 1 positive upper edge of dielectric-slab, second end is connect with the top of third rectangular microstrip structure 4, and third can also be made defeated
The first end for entering/exporting microstrip line 14 is located at 1 positive lower edge of dielectric-slab, second end and third rectangular microstrip structure 4
Top connects.
The duplexer of the present embodiment has following three kinds of working conditions：
1) it when energy is inputted from the first input/output end port Port1, is arrived after the first input/output microstrip line 12
Up to the first rectangular microstrip structure 2, the energy of two frequencies is separated into, the energy of one of frequency passes through the second input/output
Microstrip line 13, is exported by the second input/output end port Port2, and the energy of another frequency passes sequentially through the second rectangular microstrip knot
Structure 3, third rectangular microstrip structure 4 and third input/output microstrip line 14 are exported by third input/output end port Port3.
2) it when energy is inputted from the second input/output end port Port2, is arrived after the second input/output microstrip line 13
Up to the first rectangular microstrip structure 2, the energy of two frequencies is separated into, the energy of one of frequency passes through the first input/output
Microstrip line 13, is exported by the first input/output end port Port1, and the energy of another frequency passes sequentially through the second rectangular microstrip knot
Structure 3, third rectangular microstrip structure 4 and third input/output microstrip line 14 are exported by third input/output end port Port3.
3) when energy is inputted from third input/output end port Port3, successively by third input/output microstrip line 14,
The first rectangular microstrip structure 2 is reached after third rectangular microstrip structure 4, the second rectangular microstrip structure 3, is separated into the energy of two frequencies
Amount, the energy of one of frequency are exported by the first input/output end port Port1 by the first input/output microstrip line 12,
The energy of another frequency is exported by the second input/output microstrip line 13 by the second input/output end port Port2.
The Electromagnetic Simulation curve of the duplexer frequency response of the present embodiment is as shown in figure 4, S in figure11The first input of expression/defeated
The return loss of exit port Port1；S22Represent the return loss of the second input/output end port Port2, S33The input of expression third/
The return loss of output port Port3, S12Represent the first input/output end port Port1 to the second input/output end port Port2
Transmission coefficient, S13Represent the first input/output end port Port1 to the transmission coefficient of third input/output end port Port3, S23
The transmission coefficient of the second input/output end port Port2 to third input/output end port Port3 is represented, from the first input/output
Port Port1, the second input/output end port Port2 and third input/output end port Port3 inputs, pass through three rectangular microstrips
Structure can generate two modes of resonance.
Embodiment 2：
The present embodiment is mainly characterized by：As shown in figure 5, the first rectangular microstrip structure 2, the second rectangular microstrip structure
3 and third rectangular microstrip structure 4 be the structure of gap of not cracking, pass through the length for changing rectangular microstrip structure and wide control model
Resonant frequency.Remaining is the same as embodiment 1.
In conclusion the present invention is provided with three rectangular microstrip structures in the front of dielectric-slab and three input/output are micro-
Band line, rectangular microstrip structure can generate the effect of multimode, by change rectangular microstrip structure length and wide control model it is humorous
Vibration frequency, three input/output microstrip lines can select a wherein input/output microstrip line input, two other input/defeated
Go out microstrip line output, three kinds of working conditions can be realized by combination, third-order plane micro-strip duplexer is realized, disclosure satisfy that small
Type, it is highly selective, design and process the features such as simple；It is also possible to it is outputed in three rectangular microstrip structures
Gap, by change rectangular microstrip structure length and wide and gap length come the resonant frequency of control model, and use
Radiation can be reduced by outputing the rectangular microstrip structure in gap, reduce insertion loss.
The above, patent preferred embodiment only of the present invention, but the protection domain of patent of the present invention is not limited to
This, any one skilled in the art is in the range disclosed in patent of the present invention, according to the skill of patent of the present invention
Art scheme and its inventive concept are subject to equivalent substitution or change, belong to the protection domain of patent of the present invention.
Claims (10)
1. a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer, it is characterised in that：Including dielectric-slab, the dielectric-slab
Front set there are three rectangular microstrip structure and three input/output microstrip lines, three rectangular microstrip structures are from left to right
It is sequentially connected, the rectangular microstrip structure connection on two of which input/output microstrip line and the left side, in addition an input/output is micro-
It is connected with the rectangular microstrip structure on line and the right, the back side of the dielectric-slab is earth plate.
2. a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer according to claim 1, it is characterised in that：Institute
It states and is provided with gap in three rectangular microstrip structures.
3. a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer according to claim 2, it is characterised in that：Institute
It is cross gap to state the gap in three rectangular microstrip structures.
4. a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer according to claim 1, it is characterised in that：Institute
It states in three rectangular microstrip structures, the rectangular microstrip structure on the left side is connected by the first microstrip line and intermediate rectangular microstrip structure
It connects, intermediate rectangular microstrip structure is connected by the rectangular microstrip structure on the second microstrip line and the right.
5. a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer according to claim 4, it is characterised in that：Institute
It is bent microstrip line to state the first microstrip line and the second microstrip line.
6. a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer according to claim 1, it is characterised in that：Institute
It states three input/output microstrip lines and uses characteristic impedance as 50 ohm of microstrip line.
It is 7. special according to a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer of claim 1-6 any one of them
Sign is：Three rectangular microstrip structures be from left to right followed successively by the first rectangular microstrip structure, the second rectangular microstrip structure and
Third rectangular microstrip structure, three input/output microstrip lines are respectively the first input/output microstrip line, the second input/defeated
Go out microstrip line and third input/output microstrip line；
The first end of the first input/output microstrip line is located at the positive first edge of dielectric-slab, and the second input/output is micro-
First end with line is located at the positive second edge of dielectric-slab, and the first input/output microstrip line and the second input/output are micro-
Second end with line is connect respectively with two sides of the first rectangular microstrip structure；
The first end of the third input/output microstrip line is located at the positive third edge of dielectric-slab, and third input/output is micro-
Second end with line is connect with a line of third rectangular microstrip structure.
8. a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer according to claim 7, it is characterised in that：Institute
The first end for stating the first input/output microstrip line is located at the positive left hand edge of dielectric-slab, and the of the first input/output microstrip line
Two ends are connect with the left side of the first rectangular microstrip structure.
9. a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer according to claim 7, it is characterised in that：Institute
The first end for stating the second input/output microstrip line is located at the positive lower edge of dielectric-slab, and the of the second input/output microstrip line
Two ends and the following connection of the first rectangular microstrip structure.
10. a kind of highly integrated bimodulus rectangle resonator individual layer plane duplexer according to claim 7, it is characterised in that：
The first end of the third input/output microstrip line is located at the positive right edge of dielectric-slab, third input/output microstrip line
Second end is connect with the right of third rectangular microstrip structure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810250529.7A CN108232380B (en) | 2018-03-26 | 2018-03-26 | High-integration double-mode rectangular resonator single-layer planar duplexer |
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| CN201810250529.7A CN108232380B (en) | 2018-03-26 | 2018-03-26 | High-integration double-mode rectangular resonator single-layer planar duplexer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110416670A (en) * | 2019-06-21 | 2019-11-05 | 佳木斯大学 | Multistage bandpass filter with small-sized double bandpass filter and its composition |
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