CN108232040A - Packaging method and display equipment - Google Patents
Packaging method and display equipment Download PDFInfo
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- CN108232040A CN108232040A CN201711480416.8A CN201711480416A CN108232040A CN 108232040 A CN108232040 A CN 108232040A CN 201711480416 A CN201711480416 A CN 201711480416A CN 108232040 A CN108232040 A CN 108232040A
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- interlayer insulating
- insulating film
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Abstract
The present invention relates to a kind of packaging method and display equipment.Above-mentioned packaging method includes：Buffer layer film layer and semiconductor film are taken shape on substrate；The first metal-insulator composite structure layer is prepared, wherein the first metal-insulator composite structure layer includes the first interlayer insulating film and the first metallic diaphragm；The first metal-insulator composite structure layer is performed etching using imaging process and dry etch process, to form the first metal layer pattern, the first metal layer pattern has leave blank region, the first metal grill region and the second metal grill region, region of leaving blank separates the first metal grill region and the second metal grill region, the first mask through-hole is offered on first metal grill region, the second mask through-hole is offered on the second metal grill region；Prepare the second metal-insulator composite structure layer；Above-mentioned packaging method and display equipment, product structure makes sinter layer and backboard combine closely with process, ensure that the reliability of the encapsulation of display equipment.
Description
Technical field
The present invention relates to the technical field of the preparation of display equipment, more particularly to a kind of packaging method and display equipment.
Background technology
With the rapid development of science and technology, high usage becomes the inexorable trend of display equipment development.It is set to improve display
Standby effective display area, display equipment are reduced as far as the border width of display equipment pursuing while large-size screen monitors display.
Since display equipment uses sintering packaging method to be packaged, in order to improve the effective display area of display equipment,
It is gradually decreased in display equipment for being sintered the area of encapsulation, and then increases the deficiency of the bondability of the encapsulation of display equipment
With the risk of package failure.Although traditional sintering encapsulation improves the envelope of display equipment using the agglomerated material of higher bond degree
The bondability of dress, but this agglomerated material stress after laser sintered is larger and rigidity is stronger, makes the encapsulation of display equipment
Place easily cracks, so as to make the service life of display equipment relatively low.
Invention content
Based on this, it is necessary to for display equipment encapsulation at easily cracking and service life it is relatively low the problem of, provide one
Kind packaging method and display equipment.
A kind of packaging method, including：
Buffer layer film layer and semiconductor film are taken shape on substrate；
The first metal-insulator composite structure layer is prepared, wherein the first metal-insulator composite structure layer includes the first interlayer
Insulating layer and the first metallic diaphragm；
The first metal-insulator composite structure layer is performed etching using imaging process and dry etch process, to be formed
The first metal layer pattern, the first metal layer pattern have leave blank region, the first metal grill region and the second metal grill
Region, the region of leaving blank separate the first metal grill region and the second metal grill region, first gold medal
Belong to and offer the first mask through-hole on net region, the second mask through-hole is offered on the second metal grill region；
The second metal-insulator composite structure layer is prepared, wherein the second metal-insulator composite structure layer includes the second interlayer
Insulating layer and the second metallic diaphragm, second metallic diaphragm take shape in second interlayer insulating film, and second interlayer is exhausted
Edge layer includes at least one layer of moisture-resistant liquid etch layer；
The second metal-insulator composite structure layer is performed etching using imaging process and dry etch process, with removal
Second metallic diaphragm corresponding with the first metal layer pattern；
Third interlayer insulating film, the third interlayer insulating film packet are prepared on the second metal-insulator composite structure layer
Include at least one layer of moisture-resistant liquid etch layer；
Buffering layer pattern is prepared, wherein preparing bumps not on the buffer layer using imaging process and dry etch process
Flat surface makes the buffer layer part be etched；Side is carried out on the third interlayer insulating film using wet-etching technology
To etching, to form sidewall notches；The buffering layer pattern has the first grid areas and the second grid areas, and described the
Interval region is formed between one grid areas and second grid areas, the interval region is used for first grid
Region and second grid areas separate, and connected with the first mask through-hole is offered in first grid areas
One via, second grid areas offer the second via connected with the second mask through-hole；
In being coated with sinter layer on the substrate；And
Cover board is packaged on the substrate.
The step that buffer layer film layer and semiconductor film are taken shape on substrate is included in one of the embodiments,：
The buffer layer film layer and the semiconductor film are prepared, buffer layer film layer and semiconductor film is made to take shape in substrate
On；
The semiconductor film is performed etching using imaging process and dry etch process, to obtain semiconductor film pair
It should be in the pattern at encapsulation.
The semiconductor film is carved using imaging process and dry etch process in one of the embodiments,
Before erosion and after the buffer layer film layer and the semiconductor film is prepared, step is further included：
Crystallizing treatment is carried out to the semiconductor film, the amorphous silicon for making the semiconductor film is polysilicon, is carried
The high electron transfer rate of semiconductor film.
The step of preparing the first metal-insulator composite structure layer in one of the embodiments, includes：
First interlayer insulating film is prepared, the first interlayer insulating film is made to take shape on buffer layer and semiconductor film；
First metallic diaphragm is made on first interlayer insulating film, the first metallic diaphragm is made to take shape in first layer
Between on insulating layer.
The step of preparing the second metal-insulator composite structure layer in one of the embodiments, includes：
Second interlayer insulating film is prepared, the second interlayer insulating film is made to take shape in buffer layer and the first interlayer insulating film
On；
Second metallic diaphragm is made on second interlayer insulating film, the second metallic diaphragm is made to take shape in the second layer
Between on insulating layer.
In one of the embodiments, on the substrate be coated with sinter layer before and prepare buffering layer pattern it
Afterwards, step is further included：
In preparing third metallic diaphragm on the buffering layer pattern, third metallic diaphragm is made to take shape on buffering layer pattern；
It is performed etching on the third metallic diaphragm using imaging process and dry etch process, to form the third
The corresponding pattern of metallic diaphragm, i.e. third metallic diaphragm correspond to the pattern at encapsulation.
In one of the embodiments, before sinter layer is coated on the substrate and using imaging process and dry
After method etching technics performs etching on the third metallic diaphragm, step is further included：
The 4th interlayer insulating film is prepared, the 4th interlayer insulating film is made to take shape on the third interlayer insulating film；
It is performed etching on the 4th interlayer insulating film using imaging process and dry etch process, to form described
The corresponding pattern of four interlayer insulating films, i.e. the 4th interlayer insulating film correspond to the pattern at encapsulation.
In one of the embodiments, before sinter layer is coated on the substrate and using imaging process and dry
After method etching technics performs etching on the 4th interlayer insulating film, step is further included：
Planarization layer is prepared, the planarization layer is made to take shape on the 4th interlayer insulating film；
Corresponding pattern is made on the planarization layer using imaging process, i.e. planarization layer corresponds to the figure at encapsulation
Case.
In one of the embodiments, in institute before sinter layer is coated on the substrate and in use imaging process
It states after corresponding pattern is made on planarization layer, further includes step：
Anode film layer is prepared, makes the anode film formable layer on the planarization layer；
Wet-etching technology is etched using wet-etching technology in the anode film layer, to form the anode film
The corresponding pattern of layer, i.e. anode film layer correspond to the pattern at encapsulation.
A kind of display equipment carries out preparation assembling using the packaging method described in any of the above-described embodiment.
Above-mentioned packaging method and display equipment, first take shape in buffer layer film layer and semiconductor film on substrate；So
After prepare the first metal-insulator composite structure layer, make the first metal-insulator composite structure formable layer in buffer layer film layer and semiconductor
In film layer, wherein the first metal-insulator composite structure layer includes the first interlayer insulating film and the first metallic diaphragm；Then use into
As technique and dry etch process perform etching the first metal-insulator composite structure layer, to be formed corresponding at package position
One metal layer pattern, the first metal layer pattern have leave blank region, the first metal grill region and the second metal grill region, and
Region of leaving blank separates the first metal grill region and the second metal grill region, and first is offered on the first metal grill region
Mask through-hole offers the second mask through-hole on the second metal grill region；Then the second metal-insulator composite structure layer is prepared,
Wherein the second metal-insulator composite structure layer includes the second interlayer insulating film and the second metallic diaphragm, and the second metallic diaphragm takes shape in
Second interlayer insulating film；Then the second metal-insulator composite structure layer is carved using imaging process and dry etch process
Erosion, to remove the second metallic diaphragm corresponding with the first metal layer pattern；Then it is made on the second metal-insulator composite structure layer
Standby third interlayer insulating film；Then buffering layer pattern is prepared, buffering layer pattern has the first grid areas and the second grid areas,
And interval region is formed between the first grid areas and the second grid areas, interval region be used for the first grid areas and
Second grid areas separates, and the first via connected with the first mask through-hole, the second grid area are offered in the first grid areas
Domain offers the second via connected with the second mask through-hole；Then in being coated with sinter layer on substrate；Finally cover board is packaged in
On cover board；Since when preparing buffering layer pattern, bumps are prepared on the buffer layer not by moulding process and dry etch process
Flat surface, makes buffer layer part be etched, and partly remains on substrate, so as to make sinter layer when substrate package is in cover board
Contact area is larger；It is carried out on third interlayer insulating film using wet-etching technology laterally etched, to form sidewall notches, burnt
Tie layer and the side wall of third interlayer insulating film contact area it is larger, thereby may be ensured that sinter layer use ordinary sinter material into
Row encapsulation can reach scheduled adhesive strength, due to the agglomerated material without higher bond degree, solve display equipment
Encapsulation at easily cracking and service life it is relatively low the problem of；Since the second interlayer insulating film includes at least one layer of moisture-resistant liquid etching
Layer, and third interlayer insulating film includes at least one layer of moisture-resistant liquid etch layer, avoids the second interlayer insulating film and third layer insulation
Layer is etched completely during wet-etching technology is carried out, and makes the second interlayer insulating film and third interlayer insulating film using wet
Method etching technics part at packaging area is etched, except the adhesive strength for improving sinter layer, it can also be ensured that the second layer
Between the insulation performance of insulating layer and third interlayer insulating film.
Description of the drawings
Fig. 1 is the schematic diagram of the partial cross section at the encapsulation of the display equipment of an embodiment；
Fig. 2 is the partial schematic diagram of the partial cross section at the encapsulation of display equipment shown in Fig. 1；
Fig. 3 is the flow chart of the packaging method of an embodiment；
Fig. 4 is the flow chart of the step S101 of packaging method shown in Fig. 3；
Fig. 5 is another flow chart of the step S101 of packaging method shown in Fig. 3；
Fig. 6 is the flow chart of the step S103 of packaging method shown in Fig. 3；
Fig. 7 is the schematic diagram for the first metal layer pattern that packaging method step S105 shown in Fig. 3 makes；
Fig. 8 is the flow chart of packaging method step S107 shown in Fig. 3；
Fig. 9 is the schematic diagram of buffering layer pattern that packaging method step S113 shown in Fig. 3 makes；
Figure 10 is another flow chart of packaging method shown in Fig. 3；
Figure 11 is the another flow chart of packaging method shown in Fig. 3；
Figure 12 is another flow chart of packaging method shown in Fig. 3；
Figure 13 is the local flow chart of the packaging method of another embodiment；
Figure 14 is the local flow chart of the packaging method of another embodiment；
Figure 15 is the local flow chart of the packaging method of another embodiment；
Figure 16 is the schematic diagram of sinter layer, with the first metal layer pattern shown in Fig. 7 and buffering layer pattern shown in Fig. 9
It is adapted.
Specific embodiment
For the ease of understanding the present invention, packaging method and display equipment are carried out more fully below with reference to relevant drawings
Description.Packaging method is given in attached drawing and shows the preferred embodiment of equipment.But packaging method and display equipment can adopt
It is realized with many different forms, however it is not limited to embodiment described herein.On the contrary, provide the purpose of these embodiments
It is the disclosure more thorough and comprehensive for making to packaging method and showing equipment.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
For illustrative purposes only, it is unique embodiment to be not offered as " right side " and similar statement.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The normally understood meaning of technical staff is identical.Herein in the term used in the description of packaging method and display equipment only
It is the purpose in order to describe specific embodiment, it is not intended that in the limitation present invention.Term as used herein " and/or " include
The arbitrary and all combination of one or more relevant Listed Items.
For example, a kind of packaging method includes：For example, buffer layer film layer and semiconductor film are taken shape on substrate；For example,
Prepare the first metal-insulator composite structure layer, wherein the first metal-insulator composite structure layer include the first interlayer insulating film and
First metallic diaphragm；For example, the first metal-insulator composite structure layer is carried out using imaging process and dry etch process
Etching, to form the first metal layer pattern；For example, the first metal layer pattern has leave blank region, the first metal grill area
Domain and the second metal grill region；For example, the region of leaving blank is by the first metal grill region and second metal mesh
Lattice region separates；For example, the first mask through-hole is offered on the first metal grill region；For example, second metal mesh
The second mask through-hole is offered on lattice region；For example, the second metal-insulator composite structure layer is prepared, wherein second metal is exhausted
Edge composite structure layer includes the second interlayer insulating film and the second metallic diaphragm, and second metallic diaphragm takes shape in the second layer
Between insulating layer, second interlayer insulating film includes at least one layer of moisture-resistant liquid etch layer；Using imaging process and dry etching work
Skill performs etching the second metal-insulator composite structure layer, to remove corresponding with the first metal layer pattern described the
Two metallic diaphragms；Third interlayer insulating film, the third layer insulation are prepared on the second metal-insulator composite structure layer
Layer includes at least one layer of moisture-resistant liquid etch layer；For example, buffering layer pattern is prepared, wherein using imaging process and dry etch process
Rough surface is prepared on the buffer layer, the buffer layer part is made to be etched；For example, using wet-etching technology
Carried out on the third interlayer insulating film it is laterally etched, to form sidewall notches；For example, the buffering layer pattern has first
Grid areas and the second grid areas, and it is formed with spacer region between first grid areas and second grid areas
Domain, the interval region is for first grid areas and second grid areas to be separated, first grid areas
On offer the first via connected with the first mask through-hole, second grid areas offers and second mask
Second via of through-hole connection；For example, in being coated with sinter layer on the substrate；And cover board is packaged on the substrate.Example
Such as, a kind of packaging method includes：Buffer layer film layer and semiconductor film are taken shape on substrate；Prepare the combination of the first metal-insulator
Structure sheaf, wherein the first metal-insulator composite structure layer includes the first interlayer insulating film and the first metallic diaphragm；Using into
As technique and dry etch process perform etching the first metal-insulator composite structure layer, to form the first metal layer figure
Case, the first metal layer pattern has leave blank region, the first metal grill region and the second metal grill region, described to leave blank
Region separates the first metal grill region and the second metal grill region, is opened on the first metal grill region
Equipped with the first mask through-hole, the second mask through-hole is offered on the second metal grill region；Prepare the second metal-insulator group
Structure sheaf is closed, wherein the second metal-insulator composite structure layer includes the second interlayer insulating film and the second metallic diaphragm, it is described
Second metallic diaphragm takes shape in second interlayer insulating film, and second interlayer insulating film includes at least one layer of moisture-resistant liquid etching
Layer；The second metal-insulator composite structure layer is performed etching using imaging process and dry etch process, with removal and institute
State corresponding second metallic diaphragm of the first metal layer pattern；Third is prepared on the second metal-insulator composite structure layer
Interlayer insulating film, the third interlayer insulating film include at least one layer of moisture-resistant liquid etch layer；Buffering layer pattern is prepared, wherein using
Imaging process and dry etch process prepare rough surface on the buffer layer, are carved the buffer layer part
Erosion；Carried out on the third interlayer insulating film using wet-etching technology it is laterally etched, to form sidewall notches；The buffering
Layer pattern has the first grid areas and the second grid areas, and first grid areas and second grid areas it
Between be formed with interval region, the interval region is for first grid areas and second grid areas to be separated, institute
The first via for offering in the first grid areas and being connected with the first mask through-hole is stated, second grid areas offers
The second via connected with the second mask through-hole；In being coated with sinter layer on the substrate；And cover board is packaged in described
On substrate.
As shown in Figure 1, Figure 2 and Figure 3, the packaging method of an embodiment is used to be packaged display equipment 100.Encapsulation side
Method includes：
S101 takes shape in buffer layer film layer 10 and semiconductor film (not shown) on substrate 11.
Referring also to Fig. 4 in one of the embodiments, takes shape in buffer layer film layer and semiconductor film on substrate
Step S101 includes：
S101A prepares the buffer layer film layer and the semiconductor film, makes buffer layer film layer and semiconductor film formable layer
In on substrate.For example, the buffer layer film layer and the semiconductor film are shaped on substrate, make buffer layer film layer and half
The structure of conductor film layer is more compact.In other embodiments, the buffer layer film layer and the semiconductor film can also be first
Aftershaping is on substrate.
S101C performs etching the semiconductor film using imaging process and dry etch process, to obtain semiconductor
Film layer corresponds to the pattern at encapsulation.
Referring also to Fig. 5 is partly led in one of the embodiments, using imaging process and dry etch process to described
Before body film layer performs etching and after the buffer layer film layer and the semiconductor film is prepared, step is further included：
S101B carries out Crystallizing treatment to the semiconductor film, and the amorphous silicon for making the semiconductor film is polycrystalline
Silicon improves the electron transfer rate of semiconductor film.
S103 prepares the first metal-insulator composite structure layer 20, referring also to Fig. 2, wherein the first metal-insulator group
It closes structure sheaf and includes the first interlayer insulating film 22 and the first metallic diaphragm 24.
Referring also to Fig. 6 prepares the step S103 packets of the first metal-insulator composite structure layer in one of the embodiments,
It includes：
S103A prepares first interlayer insulating film, the first interlayer insulating film is made to take shape in buffer layer and semiconductor film
On；
S103B makes first metallic diaphragm on first interlayer insulating film, takes shape in the first metallic diaphragm
On first interlayer insulating film.
S105 performs etching the first metal-insulator composite structure layer using imaging process and dry etch process,
To form the first metal layer pattern 26.Referring also to Fig. 7, the first metal layer pattern have leave blank region 262, the first metal
264 and second metal grill region 266 of net region, the region of leaving blank is by the first metal grill region and described second
Metal grill region separates, and the first mask through-hole 264a, second metal mesh are offered on the first metal grill region
The second mask through-hole 266a is offered on lattice region；
S107 prepares the second metal-insulator composite structure layer (not shown)；Wherein described second metal-insulator composite structure
Layer includes the second interlayer insulating film and the second metallic diaphragm, and second metallic diaphragm takes shape in second interlayer insulating film,
Second interlayer insulating film includes at least one layer of moisture-resistant liquid etch layer.For example, the second interlayer insulating film is individual layer film quality structure,
And the material that the material of individual layer film quality structure is moisture-resistant liquid etching, it can be to avoid insulating layer between the second layer during wet etching
It is etched.It is appreciated that in other embodiments, the second interlayer insulating film can also be lamination film quality structure, and described second
One layer of material of insulating layer is the material of moisture-resistant liquid etching between interlayer insulating film adjacent first layer, can be to avoid exhausted between the second layer
Edge layer is etched completely during wet etching.For example, the moisture-resistant liquid etch layer is to etch corrosion with the wet liquid of resistance
Structure sheaf.For example, the material of wet liquid etching liquid includes but are not limited to hydrofluoric acid.
Referring also to Fig. 8 prepares the step S107 packets of the second metal-insulator composite structure layer in one of the embodiments,
It includes：
S107A prepares second interlayer insulating film, makes that the second interlayer insulating film takes shape in buffer layer and the first interlayer is exhausted
In edge layer.
S107B makes second metallic diaphragm on second interlayer insulating film, takes shape in the second metallic diaphragm
On second interlayer insulating film.
S109 performs etching the second metal-insulator composite structure layer using imaging process and dry etch process,
To remove second metallic diaphragm corresponding with the first metal layer pattern；
S111 prepares third interlayer insulating film 28, the third interlayer on the second metal-insulator composite structure layer
Insulating layer includes at least one layer of moisture-resistant liquid etch layer；
For example, the third interlayer insulating film is lamination film quality structure, and the top layer of the third interlayer insulating film is anti-
Wet liquid etch layer, the material of moisture-resistant liquid etch layer be the material of moisture-resistant liquid etching, i.e. third interlayer insulating film deviates from the second layer
Between one layer of the insulating layer material layers for moisture-resistant liquid etching, can be complete during wet etching to avoid insulating layer between third layer
Full etching.For another example, the material of wet liquid etching liquid includes but are not limited to hydrofluoric acid.
S113 prepares buffering layer pattern 29.As shown in Fig. 2, using imaging process and dry etch process in the buffering
Rough surface is prepared on layer, i.e., concaveconvex structure 15 is formed on buffer layer, the buffer layer part is made to be etched and part
It remains on substrate.Carried out on the third interlayer insulating film using wet-etching technology it is laterally etched, it is recessed to form side wall
Slot 282.Referring also to Fig. 9, the buffering layer pattern have the first grid areas 29b and the second grid areas 29c, and described
It is formed with interval region 29a between first grid areas and second grid areas, the interval region is used for described the
One grid areas and second grid areas separate, and offer in first grid areas and connect with the first mask through-hole
The first logical via 293, second grid areas offer the second via 295 connected with the second mask through-hole.Example
Such as, the cross section of concaveconvex structure is in wavy.
S131, in being coated with sinter layer 30 on the substrate, as shown in figure 16.
Referring also to Figure 10, in one of the embodiments, on the substrate be coated with sinter layer before and preparing
After buffering layer pattern, step is further included：
S114 in preparing third metallic diaphragm on the buffering layer pattern, makes third metallic diaphragm take shape in buffer layer figure
In case；
S115 is performed etching using imaging process and dry etch process on the third metallic diaphragm, to be formed
The corresponding pattern of third metallic diaphragm is stated, i.e. third metallic diaphragm corresponds to the pattern at encapsulation.
Referring also to Figure 11, in one of the embodiments, on the substrate be coated with sinter layer before and using
After imaging process and dry etch process perform etching on the third metallic diaphragm, step is further included：
S116 prepares the 4th interlayer insulating film 40, the 4th interlayer insulating film is made to take shape in the third layer insulation
On layer；
S117 is performed etching using imaging process and dry etch process on the 4th interlayer insulating film, to be formed
The corresponding pattern of 4th interlayer insulating film, i.e. the 4th interlayer insulating film correspond to the pattern at encapsulation.
Referring also to Figure 12, in one of the embodiments, on the substrate be coated with sinter layer before and using
After imaging process and dry etch process perform etching on the 4th interlayer insulating film, step is further included：
S118 prepares planarization layer, and the planarization layer is made to take shape on the 4th interlayer insulating film；
S119 makes corresponding pattern using imaging process on the planarization layer, i.e. planarization layer corresponds to encapsulation
The pattern at place.
As shown in figure 13, in one of the embodiments, on the substrate be coated with sinter layer before and using into
After making corresponding pattern on the planarization layer as technique, step is further included：
S120 prepares anode film layer, makes the anode film formable layer on the planarization layer；
S121, wet-etching technology is etched using wet-etching technology in the anode film layer, with described in formation
The corresponding pattern of anode film layer, i.e. anode film layer correspond to the pattern at encapsulation.
As shown in figure 14, it is carved before sinter layer is coated on the substrate and in wet method in one of the embodiments,
After etching technique is etched using wet-etching technology in the anode film layer, step is further included：
S122 prepares pixel defining layer, pixel defining layer is made to take shape in anode film layer；
S123 is made corresponding pattern of imaging process in pixel defining layer, i.e. pixel defining layer corresponds to encapsulation
The pattern at place.
As shown in figure 15, in one of the embodiments, on the substrate be coated with sinter layer before and using into
After corresponding pattern is made in pixel defining layer as technique, step is further included：
S124 prepares cover plate support layer, makes cover plate support formable layer in pixel defining layer；
S125 makes corresponding pattern using imaging process on cover plate support layer, i.e. cover plate support layer corresponds to encapsulation
The pattern at place.For example, it is made on cover plate support layer before sinter layer is coated on the substrate and using imaging process
After corresponding pattern, step is further included：Luminescent material is deposited.
Cover board is packaged on the substrate by S133.
As shown in Figure 1, the present invention also provides a kind of display equipment 100, using the encapsulation side described in any of the above-described embodiment
Method carries out preparation assembling.For example, display equipment includes substrate 11, buffer layer film layer 10, semiconductor film (not shown), the first gold medal
Belong to insulation combination structure sheaf 20, the second metal-insulator composite structure layer (not shown), third interlayer insulating film 28, sinter layer 30 with
And cover board (not shown), buffer layer film layer and semiconductor film are taken shape on substrate, the first metal-insulator composite structure layer
Including the first interlayer insulating film and the first metallic diaphragm, the first interlayer insulating film is taken shape on buffer layer and semiconductor film, the
One metallic diaphragm is taken shape on the first interlayer insulating film；The second metal-insulator composite structure layer includes the second interlayer insulating film
With the second metallic diaphragm, second metallic diaphragm takes shape in second interlayer insulating film, the second interlayer insulating film packet
At least one layer of moisture-resistant liquid etch layer is included, the second interlayer insulating film is taken shape on buffer layer and the first interlayer insulating film, the second metal
Film layer is taken shape on the second interlayer insulating film；Third interlayer insulating film is taken shape on the second metal-insulator composite structure layer, described
Third interlayer insulating film includes at least one layer of moisture-resistant liquid etch layer；Using imaging process and dry etch process in the buffer layer
It is upper to prepare rough surface, the buffer layer part is made to be etched and partly remain on substrate.Using wet etching work
Skill carried out on the third interlayer insulating film it is laterally etched, to form sidewall notches.The buffering layer pattern has the first lattice
Gate region and the second grid areas, and it is formed with spacer region between first grid areas and second grid areas
Domain, the interval region is for first grid areas and second grid areas to be separated, first grid areas
On offer the first via connected with the first mask through-hole, second grid areas offers and second mask
Second via of through-hole connection；Third metallic diaphragm is taken shape on buffering layer pattern, and sinter layer is filled in sidewall notches and bumps
On uneven surface.For another example, display equipment further includes the 4th interlayer insulating film, and the 4th interlayer insulating film takes shape in described the
On three interlayer insulating films, and the 4th interlayer insulating film is formed with pattern corresponding at encapsulation.For another example, display equipment further includes flat
Smoothization layer, the planarization layer are taken shape on the 4th interlayer insulating film, and planarization layer has pattern corresponding at encapsulation.
For another example, display equipment further includes anode film layer, and on the planarization layer, anode film layer is formed with and encapsulates anode film formable layer
Locate corresponding pattern.For another example, display equipment further includes pixel defining layer, and pixel defining layer is taken shape in anode film layer, and pixel is fixed
Pattern corresponding at encapsulation is formed on adopted layer.For another example, display equipment further includes cover plate support layer, cover plate support formable layer in
In pixel defining layer, pattern corresponding at encapsulation is formed on cover plate support layer.The buffer layer film layer of above-mentioned display equipment,
Semiconductor film, the first metal-insulator composite structure layer, the second metal-insulator composite structure layer, third interlayer insulating film, the 4th
Interlayer insulating film, planarization layer, anode film layer, pixel defining layer, cover plate support layer and sinter layer are stacked, due to preparing
When buffering layer pattern, rough surface is prepared by moulding process and dry etch process on the buffer layer, makes buffer layer
Part is etched, and partly remains on substrate, so as to make contact area of the sinter layer when substrate package is in cover board larger；Using
Wet-etching technology carries out laterally etched on third interlayer insulating film, and to form sidewall notches, sinter layer and third interlayer are exhausted
The contact area of the side wall of edge layer is larger, thereby may be ensured that sinter layer be packaged using ordinary sinter material can reach it is pre-
Fixed adhesive strength due to the agglomerated material without higher bond degree, easily cracks at the encapsulation for solving display equipment
And service life it is relatively low the problem of.
For example, the second interlayer insulating film is individual layer film quality structure, and the material of individual layer film quality structure is moisture-resistant liquid etching
Material can be etched to avoid insulating layer between the second layer during wet etching.It is appreciated that in other embodiments, the
Two interlayer insulating films can also be lamination film quality structure, and one layer of insulating layer between the second interlayer insulating film adjacent first layer
Material be moisture-resistant liquid etching material, can completely be etched during wet etching to avoid insulating layer between the second layer.Example
Such as, the moisture-resistant liquid etch layer is with the structure sheaf for resisting wet liquid etching corrosion.For example, the material of wet liquid etching liquid includes
But it is not limited only to hydrofluoric acid.
For example, the third interlayer insulating film is lamination film quality structure, and the top layer of the third interlayer insulating film is anti-
Wet liquid etch layer, the material of moisture-resistant liquid etch layer be the material of moisture-resistant liquid etching, i.e. third interlayer insulating film deviates from the second layer
Between one layer of the insulating layer material layers for moisture-resistant liquid etching, can be complete during wet etching to avoid insulating layer between third layer
Full etching.For another example, the material of wet liquid etching liquid includes but are not limited to hydrofluoric acid.
Above-mentioned packaging method and display equipment, first take shape in buffer layer film layer and semiconductor film on substrate；So
After prepare the first metal-insulator composite structure layer, make the first metal-insulator composite structure formable layer in buffer layer film layer and semiconductor
In film layer, wherein the first metal-insulator composite structure layer includes the first interlayer insulating film and the first metallic diaphragm；Then use into
As technique and dry etch process perform etching the first metal-insulator composite structure layer, to be formed corresponding at package position
One metal layer pattern, the first metal layer pattern have leave blank region, the first metal grill region and the second metal grill region, and
Region of leaving blank separates the first metal grill region and the second metal grill region, and first is offered on the first metal grill region
Mask through-hole offers the second mask through-hole on the second metal grill region；Then the second metal-insulator composite structure layer is prepared,
Wherein the second metal-insulator composite structure layer includes the second interlayer insulating film and the second metallic diaphragm, and the second metallic diaphragm takes shape in
Second interlayer insulating film；Then the second metal-insulator composite structure layer is carved using imaging process and dry etch process
Erosion, to remove the second metallic diaphragm corresponding with the first metal layer pattern；Then it is made on the second metal-insulator composite structure layer
Standby third interlayer insulating film；Then buffering layer pattern is prepared, buffering layer pattern has the first grid areas and the second grid areas,
And interval region is formed between the first grid areas and the second grid areas, interval region be used for the first grid areas and
Second grid areas separates, and the first via connected with the first mask through-hole, the second grid area are offered in the second grid areas
Domain offers the second via connected with the second mask through-hole；Then in being coated with sinter layer on substrate；Finally cover board is packaged in
On cover board；Since when preparing buffering layer pattern, bumps are prepared on the buffer layer not by moulding process and dry etch process
Flat surface, makes buffer layer part be etched, and partly remains on substrate, so as to make sinter layer when substrate package is in cover board
Contact area is larger；It is carried out on third interlayer insulating film using wet-etching technology laterally etched, to form sidewall notches, burnt
The contact area for tying layer and the side wall of third interlayer insulating film is larger, and sinter layer is filled in the sidewall notches of third interlayer insulating film
And the rough surface texture on buffer layer, the encapsulating structure of Embedded anti-separation is formed, thereby may be ensured that sintering
Layer is packaged using ordinary sinter material can reach scheduled adhesive strength, due to the sintering without higher bond degree
Material solves the problems, such as easily to crack at the encapsulation of display equipment and service life is relatively low；Due to the second interlayer insulating film packet
At least one layer of moisture-resistant liquid etch layer is included, and third interlayer insulating film includes at least one layer of moisture-resistant liquid etch layer, avoids the second interlayer
Insulating layer and third interlayer insulating film are etched completely during wet-etching technology is carried out, make the second interlayer insulating film and
Third interlayer insulating film is etched using wet-etching technology part at packaging area, improve sinter layer adhesive strength it
Outside, it can also be ensured that the insulation performance of the second interlayer insulating film and third interlayer insulating film.Above-mentioned packaging method and display is set
Standby, product structure makes sinter layer and backboard combine closely with process, ensure that the reliability of the encapsulation of display equipment.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Embodiment described above only expresses the several embodiments of the present invention, and description is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that those of ordinary skill in the art are come
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of packaging method, which is characterized in that including：
Buffer layer film layer and semiconductor film are taken shape on substrate；
The first metal-insulator composite structure layer is prepared, wherein the first metal-insulator composite structure layer includes the first layer insulation
Layer and the first metallic diaphragm；
The first metal-insulator composite structure layer is performed etching using imaging process and dry etch process, to form first
Metal layer pattern, the first metal layer pattern have leave blank region, the first metal grill region and the second metal grill region,
The region of leaving blank separates the first metal grill region and the second metal grill region, first metal grill
The first mask through-hole is offered on region, the second mask through-hole is offered on the second metal grill region；
The second metal-insulator composite structure layer is prepared, wherein the second metal-insulator composite structure layer includes the second layer insulation
Layer and the second metallic diaphragm, second metallic diaphragm take shape in second interlayer insulating film, second interlayer insulating film
Including at least one layer of moisture-resistant liquid etch layer；
The second metal-insulator composite structure layer is performed etching using imaging process and dry etch process, with removal and institute
State corresponding second metallic diaphragm of the first metal layer pattern；
Third interlayer insulating film is prepared on the second metal-insulator composite structure layer, the third interlayer insulating film is included extremely
Few one layer of moisture-resistant liquid etch layer；
Buffering layer pattern is prepared, wherein being prepared on the buffer layer using imaging process and dry etch process rough
Surface makes the buffer layer part be etched；It is laterally carved on the third interlayer insulating film using wet-etching technology
Erosion, to form sidewall notches；The buffering layer pattern has the first grid areas and the second grid areas, and in first lattice
Interval region is formed between gate region and second grid areas, the interval region is used for first grid areas
It is separated with second grid areas, the first mistake connected with the first mask through-hole is offered in first grid areas
Hole, second grid areas offer the second via connected with the second mask through-hole；
In being coated with sinter layer on the substrate；And
Cover board is packaged on the substrate.
2. packaging method according to claim 1, which is characterized in that buffer layer film layer and semiconductor film are taken shape in into base
Step on plate includes：
Prepare the buffer layer film layer and the semiconductor film；
The semiconductor film is performed etching using imaging process and dry etch process.
3. packaging method according to claim 2, which is characterized in that using imaging process and dry etch process to institute
It states before semiconductor film performs etching and after the buffer layer film layer and the semiconductor film is prepared, further includes
Step：
Crystallizing treatment is carried out to the semiconductor film.
4. packaging method according to claim 1, which is characterized in that the step of preparing the first metal-insulator composite structure layer
Including：
Prepare first interlayer insulating film；
First metallic diaphragm is made on first interlayer insulating film.
5. packaging method according to claim 1, which is characterized in that the step of preparing the second metal-insulator composite structure layer
Including：
Prepare second interlayer insulating film；
Second metallic diaphragm is made on second interlayer insulating film.
6. packaging method according to claim 1, which is characterized in that on the substrate be coated with sinter layer before and
After buffering layer pattern is prepared, step is further included：
In preparation third metallic diaphragm on the buffering layer pattern；
It is performed etching on the third metallic diaphragm using imaging process and dry etch process, to form the third metal
The corresponding pattern of film layer.
7. packaging method according to claim 6, which is characterized in that on the substrate be coated with sinter layer before and
After being performed etching on the third metallic diaphragm using imaging process and dry etch process, step is further included：
The 4th interlayer insulating film is prepared, the 4th interlayer insulating film is made to take shape on the third interlayer insulating film；
It is performed etching on the 4th interlayer insulating film using imaging process and dry etch process, to form described 4th layer
Between the corresponding pattern of insulating layer.
8. packaging method according to claim 7, which is characterized in that on the substrate be coated with sinter layer before and
After being performed etching on the 4th interlayer insulating film using imaging process and dry etch process, step is further included：
Planarization layer is prepared, the planarization layer is made to take shape on the 4th interlayer insulating film；
Corresponding pattern is made on the planarization layer using imaging process.
9. packaging method according to claim 8, which is characterized in that on the substrate be coated with sinter layer before and
After corresponding pattern is made on the planarization layer using imaging process, step is further included：
Anode film layer is prepared, makes the anode film formable layer on the planarization layer；
It is etched in the anode film layer using wet-etching technology, to form the corresponding pattern of the anode film layer.
10. a kind of display equipment, which is characterized in that prepared using the packaging method described in any one of claim 1 to 9
Assembling.
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| CN201711480416.8A CN108232040B (en) | 2017-12-29 | 2017-12-29 | Packaging method and display equipment |
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|---|---|---|---|
| CN201711480416.8A CN108232040B (en) | 2017-12-29 | 2017-12-29 | Packaging method and display equipment |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150102293A1 (en) * | 2013-10-14 | 2015-04-16 | Samsung Display Co., Ltd. | Display apparatus |
| CN104576685A (en) * | 2013-10-29 | 2015-04-29 | 三星显示有限公司 | Organic light emitting display apparatuses and methods of manufacturing the organic light emitting display apparatuses |
| CN106548987A (en) * | 2016-12-29 | 2017-03-29 | 长春海谱润斯科技有限公司 | Display floater and display floater encapsulation glue coating method |
| CN106784383A (en) * | 2017-01-05 | 2017-05-31 | 南京第壹有机光电有限公司 | The OLED encapsulated with the cover plate for having Back Word connected in star |
| CN107482042A (en) * | 2017-08-18 | 2017-12-15 | 京东方科技集团股份有限公司 | Oled display substrate and preparation method thereof, OLED display |
-
2017
- 2017-12-29 CN CN201711480416.8A patent/CN108232040B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150102293A1 (en) * | 2013-10-14 | 2015-04-16 | Samsung Display Co., Ltd. | Display apparatus |
| CN104576685A (en) * | 2013-10-29 | 2015-04-29 | 三星显示有限公司 | Organic light emitting display apparatuses and methods of manufacturing the organic light emitting display apparatuses |
| CN106548987A (en) * | 2016-12-29 | 2017-03-29 | 长春海谱润斯科技有限公司 | Display floater and display floater encapsulation glue coating method |
| CN106784383A (en) * | 2017-01-05 | 2017-05-31 | 南京第壹有机光电有限公司 | The OLED encapsulated with the cover plate for having Back Word connected in star |
| CN107482042A (en) * | 2017-08-18 | 2017-12-15 | 京东方科技集团股份有限公司 | Oled display substrate and preparation method thereof, OLED display |
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