CN108231003B - Pixel circuit and its driving method, organic electroluminescence device, display device - Google Patents
Pixel circuit and its driving method, organic electroluminescence device, display device Download PDFInfo
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- CN108231003B CN108231003B CN201810055112.5A CN201810055112A CN108231003B CN 108231003 B CN108231003 B CN 108231003B CN 201810055112 A CN201810055112 A CN 201810055112A CN 108231003 B CN108231003 B CN 108231003B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Geometry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Control Of El Displays (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The present invention provides a kind of pixel circuit and its driving methods, organic electroluminescence device, display device, pixel circuit includes the first transistor, second transistor, third transistor, 4th transistor, 5th transistor, 6th transistor, first memory element and the second memory element, in addition, the grid of the first transistor is electrically connected to an emission control driving circuit, the first electrode of the first transistor is electrically connected to one first supply voltage, the grid of the second transistor is electrically connected to a scan drive circuit, the second electrode of the third transistor is electrically connected to a luminescent device；The first electrode of 4th transistor is electrically connected to a second source voltage, and the first electrode of the 6th transistor is electrically connected to a data drive circuit.The present invention changes the electric current (gate-source voltage of third transistor) of Organic Light Emitting Diode with mains voltage variations, avoids the influence of the pressure drop by supply voltage.
Description
Technical field
The present invention relates to field of display technology, in particular to a kind of pixel circuit and its driving method, organic electroluminescent
Device, display device.
Background technique
Due to rapidly improving for MultiMedia Field, the technology of semiconductor element and display device also has tremendous therewith
Progress.For display, due to active matrix organic LED (Active Matrix Organic Light
Emitting Diode, AMOLED) display have no angle limit, low manufacturing cost, high answer speed (about the hundred of liquid crystal
Times or more), power saving, self-luminous, can be used the DC driven in portable machine, operating temperature range big and light-weight and can
With the characteristic requirements for meeting multimedia era display the advantages that hardware device miniaturization and slimming etc..Therefore, active
Matrix organic LED display has great development potentiality, it is expected to as the novel flat display of next generation,
It uses and replaces liquid crystal display (liquid crystal display, LCD).
There are mainly two types of production methods for active matrix organic LED display panel at present, one is utilizing low temperature
Thin film transistor (TFT) (TFT) process technique of polysilicon (LTPS) makes, and another, is the film using amorphous silicon (a-Si)
Transistor (TFT) process technique makes.Wherein, since the thin film transistor (TFT) process technique of low temperature polycrystalline silicon needs to compare multiple tracks
Optical cover process and lead to cost increase.Therefore, during the thin film transistor (TFT) process technique of low temperature polycrystalline silicon is mainly used at present
On the panel of small size, and the thin film transistor (TFT) process technique of amorphous silicon is then mainly used on large-sized panel.
In general, it is organic to adopt the active-matrix come out made by the thin film transistor (TFT) process technique with low temperature polycrystalline silicon
The kenel of LED display panel, the thin film transistor (TFT) in pixel circuit can be p-type or N-type, but due to p-type film
Transistor conduction positive electricity is pressed with preferable driving capability, so mostly implemented now with selecting P-type TFT.However, choosing
P-type TFT is selected to flow through the electric current of Organic Light Emitting Diode under conditions of realizing organic light-emitting diode pixel circuit
Can not only be influenced and be changed by current resistor voltage drop (IR Drop) with supply voltage (Vdd), but also can with
It is different to drive the limit voltage of the thin film transistor (TFT) of Organic Light Emitting Diode to drift about (Vth shift).In this way,
It related will influence the brightness uniformity of organic light emitting diode display.
Summary of the invention
The purpose of the present invention is to provide a kind of pixel circuit and its driving method, organic electroluminescence device, display dresses
It sets, to solve the electric current of existing Organic Light Emitting Diode as supply voltage is changed by the influence of current resistor voltage drop
The problem of.
In order to solve the above technical problems, the present invention provides a kind of pixel circuit, the pixel circuit include the first transistor,
Second transistor, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the first memory element and the second storage
Element, in which:
The grid of the first transistor is electrically connected to an emission control driving circuit, the first electricity of the first transistor
Pole is electrically connected to one first supply voltage, and the second electrode of the first transistor is electrically connected to the of second memory element
Two electrodes；
The grid of the second transistor is electrically connected to a scan drive circuit, the first electrode electricity of the second transistor
It is connected to first supply voltage, the second electrode of the second transistor is electrically connected to the first of second memory element
Electrode；
The grid of the third transistor is electrically connected to the first electrode of first memory element, the third transistor
First electrode be electrically connected to the second electrode of the first transistor, the second electrode of the third transistor is electrically connected to one
Luminescent device；
The grid of 4th transistor is electrically connected to the scan drive circuit, the first electrode of the 4th transistor
It is electrically connected to a second source voltage, the second electrode of the 4th transistor is electrically connected to the luminescent device；
The grid of 5th transistor is electrically connected to the emission control driving circuit, and the first of the 5th transistor
Electrode is electrically connected to the second electrode of first memory element, and the second electrode of the 5th transistor is electrically connected to described
Two supply voltages；
The grid of 6th transistor is electrically connected to the scan drive circuit, the first electrode of the 6th transistor
It is electrically connected to a data drive circuit, the second electrode of the 6th transistor is electrically connected to the second of first memory element
Electrode；
The first electrode of first memory element connects the first electrode of second memory element.
Optionally, in the pixel circuit, the first transistor, the second transistor, the third crystal
Pipe, the 4th transistor, the 5th transistor and the 6th transistor are P-type TFT；
Alternatively, the first transistor, the second transistor, the third transistor, the 4th transistor, described
5th transistor and the 6th transistor are N-type TFT.
Optionally, in the pixel circuit, the control driving signal of the emission control driving circuit output and institute
The scanning signal for stating scan drive circuit output does not overlap.
Optionally, in the pixel circuit, first memory element includes first capacitor element.
Optionally, in the pixel circuit, second memory element includes the second capacity cell.
The present invention also provides a kind of organic electroluminescence devices, comprising:
Multiple pixel circuits as described in any one of the above embodiments and multiple photophores corresponding with multiple pixel circuits
Part；
Emission control driving circuit, it is electric to the pixel by a plurality of control line for generating emission control driving signal
Road provides the emission control driving signal；
Data drive circuit provides institute to the pixel circuit by multiple data lines for generating voltage data signal
State voltage data signal；
Scan drive circuit is swept by multi-strip scanning line to described in pixel circuit offer for generating scanning signal
Retouch signal.
The present invention also provides a kind of display devices, including organic electroluminescence device as described above.
The present invention also provides a kind of driving methods of pixel circuit as described in any of the above-described, comprising:
In the first stage, the second transistor, the 4th transistor and the 6th transistor turns, described first
Transistor and the 5th transistor shutdown, voltage data signal is written into the second electrode of first memory element, described
First supply voltage is coupled to the first electrode of first memory element, and the gate-source voltage of the third transistor is first
Supply voltage；
In second stage, the first transistor and the 5th transistor turns, the second transistor, the described 4th
Transistor and the 6th transistor shutdown, the luminescent device shine, and first supply voltage, which is coupled to described second, to be deposited
The second electrode of element is stored up, the second source voltage is coupled to the second electrode of first memory element, so that described the
The gate-source voltage of three transistors is the multiple of the second source voltage and the superimposed voltage of the voltage data signal.
Optionally, in the driving method of the pixel circuit, between second stage, the grid source of the third transistor
Voltage are as follows:
Vgs=(Vini-Vsd) C1/ (C1+C2)
Wherein: Vgs is the gate-source voltage of third transistor, and Vini is second source voltage, and Vsd is data-signal electricity
Pressure, C1 are the energy storage parameter of the first memory element, and C2 is the energy storage parameter of the second memory element.
Optionally, in the driving method of the pixel circuit, in interval stage, the first transistor, described
Two-transistor, the third transistor, the 4th transistor, the 5th transistor and the 6th transistor shutdown, institute
It states interval stage and occurs between the first stage and the second stage.
In pixel circuit provided by the invention and its driving method, organic electroluminescence device, display device, pass through
One transistor, second transistor, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the first memory element
With the second simple connection relationship of memory element circuit structure, and two control sequentials of input, make the third transistor
Gate-source voltage is the multiple for the voltage data signal that the second source voltage superposition is born, that is, realizes organic light emission two
The electric current (proportional to the gate-source voltage of third transistor) of pole pipe does not change with the first mains voltage variations, avoid by
To the influence of the pressure drop of the first supply voltage.
Further, the energy storage parameter of the gate-source voltage of third transistor and the first memory element and the second storage unit
Associated, after two energy storage parameters form certain calculating formula, the electric current with Organic Light Emitting Diode is in proportionate relationship, adjusts the
The energy storage parameter of one memory element and the second storage unit, so that it may change the size of the electric current of Organic Light Emitting Diode.
In the first stage with setting interval stage among second stage, it can be further improved the reliability of circuit, prevent
When two phase transitions, the transistor be connected under different phase is answered to simultaneously turn on, leads to short trouble or leakage current failure.
Detailed description of the invention
Fig. 1 is the electrical block diagram of one embodiment of the invention pixel circuit；
Fig. 2 is the control timing diagram of one embodiment of the invention pixel circuit.
Specific embodiment
Pixel circuit proposed by the present invention and its driving method, organic electroluminescence are sent out below in conjunction with the drawings and specific embodiments
Optical device, display device are described in further detail.According to following explanation and claims, advantages and features of the invention will
It becomes apparent from.It should be noted that attached drawing is all made of very simplified form and using non-accurate ratio, only to convenient, bright
The purpose of the embodiment of the present invention is aided in illustrating clearly.
Core of the invention thought is to provide a kind of pixel circuit and its driving method, organic electroluminescence device, aobvious
Showing device, with solve the electric current of existing Organic Light Emitting Diode with supply voltage by the influence of current resistor voltage drop and
The problem of change.
<embodiment one>
The present embodiment provides a kind of pixel circuit, the pixel circuit includes the first transistor M1, second transistor M2,
Three transistor M3, the 4th transistor M4, the 5th transistor M5, the 6th transistor M6, the storage member of the first memory element C1 and second
Part C2, in which:
The grid of the first transistor M1 is electrically connected to an emission control driving circuit, the emission control driving circuit
Emission control driving signal EM is provided to the first transistor M1, the first electrode of the first transistor M1 is electrically connected to one first
Supply voltage VDD, the second electrode of the first transistor M1 are electrically connected to the second electrode of the second memory element C2；
The grid of the second transistor M2 is electrically connected to a scan drive circuit, and the scan drive circuit is to described
The grid of two-transistor M2 provides scanning signal EM, and the first electrode of the second transistor M2 is electrically connected to first power supply
Voltage VDD, the second electrode of the second transistor M2 are electrically connected to the first electrode of the second memory element C2；
The grid of the third transistor M3 is electrically connected to the first electrode of the first memory element C1, and the third is brilliant
The first electrode of body pipe M3 is electrically connected to the second electrode of the first transistor M1, the second electrode of the third transistor M3
It is electrically connected to a luminescent device D1；
The grid of the 4th transistor M4 is electrically connected to the scan drive circuit, and the scan drive circuit is to described
The grid of 4th transistor M4 provides scanning signal GATE, and the first electrode of the 4th transistor M4 is electrically connected to one second electricity
The second electrode of source voltage Vini, the 4th transistor M4 are electrically connected to the luminescent device D1；
The grid of the 5th transistor M5 is electrically connected to the emission control driving circuit, the emission control driving electricity
The 5th transistor M5 of road direction provides emission control driving signal EM, and the first electrode of the 5th transistor M5 is electrically connected to described
The second electrode of the second electrode of first memory element C1, the 5th transistor M5 is electrically connected to the second source voltage
Vini；
The grid of the 6th transistor M6 is electrically connected to the scan drive circuit, and the scan drive circuit is to described
The grid of 6th transistor M6 provides scanning signal GATE, and the first electrode of the 6th transistor M6 is electrically connected to data drive
Dynamic circuit, the data drive circuit provide voltage data signal Vsd, the 6th transistor to the grid of the 6th transistor M6
The second electrode of M6 is electrically connected to the second electrode of the first memory element C1；
The first electrode of the first memory element C1 connects the first electrode of the second memory element C2.Described first
Memory element C1 includes first capacitor element.The second memory element C2 includes the second capacity cell.
Further, in the pixel circuit, the control driving signal EM of the emission control driving circuit output
It is not overlapped with the scanning signal GATE of scan drive circuit output.
Specifically, in the pixel circuit, the first transistor M1, the second transistor M2, the third
Transistor M3, the 4th transistor M4, the 5th transistor M5 and the 6th transistor M6 are P-type TFT,
In such cases, in the first stage, the control driving signal EM of emission control driving circuit output is high level, and the scanning is driven
The scanning signal GATE of circuit output is moved as low level, in second stage, the control of emission control driving circuit output drives letter
Number EM is low level, and the scanning signal GATE of the scan drive circuit output is high level；Alternatively, the first transistor
M1, the second transistor M2, the third transistor M3, the 4th transistor M4, the 5th transistor M5 and described
6th transistor M6 is N-type TFT, in such cases, in the first stage, the control of emission control driving circuit output
Driving signal EM is low level, and the scanning signal GATE of scan drive circuit output is high level, in second stage, transmitting
The control driving signal EM for controlling driving circuit output is high level, and the scanning signal GATE of the scan drive circuit output is
Low level.
The present invention also provides a kind of organic electroluminescence devices, comprising: multiple pixel circuits as described in any one of the above embodiments
And multiple luminescent devices corresponding with multiple pixel circuits；Emission control driving circuit drives for generating emission control
Dynamic signal EM provides the emission control driving signal EM to the pixel circuit by a plurality of control line；Data drive circuit,
For generating voltage data signal Vsd, the voltage data signal Vsd is provided to the pixel circuit by multiple data lines；
Scan drive circuit provides the scanning to the pixel circuit by multi-strip scanning line and believes for generating scanning signal GATE
Number GATE.
The present invention also provides a kind of display devices, including organic electroluminescence device as described above.
To sum up, the various configuration of pixel circuit is described in detail in above-described embodiment, and certainly, the present invention includes but not
Configuration cited by being confined in above-mentioned implementation, any content converted on the basis of configuration provided by the above embodiment,
Belong to the range that the present invention is protected.Those skilled in the art can draw inferences about other cases from one instance according to the content of above-described embodiment.
<embodiment two>
The present invention also provides a kind of driving methods of pixel circuit as described above, comprising: in the first stage, described the
Two-transistor M2, the 4th transistor M4 and the 6th transistor M6 conducting, the first transistor M1 and the described 5th
Transistor M5 shutdown, voltage data signal Vsd are written into the second electrode of the first memory element C1, the first power supply electricity
Pressure VDD is coupled to the first electrode of the first memory element C1, and the gate-source voltage of the third transistor M3 is the first electricity
Source voltage VDD；
In second stage, the first transistor M1 and the 5th transistor M5 conducting, the second transistor M2, institute
The 4th transistor M4 and the 6th transistor M6 shutdown is stated, the luminescent device D1 shines, the first supply voltage VDD coupling
The second electrode of the second memory element C2 is closed, the second source voltage Vini is coupled to the first memory element C1
Second electrode so that the gate-source voltage of the third transistor M3 is negative described of second source voltage Vini superposition
The multiple of voltage data signal.
Specifically, in the driving method of the pixel circuit, in second stage, the grid source of the third transistor M3
Between voltage are as follows:
Vgs=(Vini-Vsd) C1/ (C1+C2)
Wherein: Vgs is the gate-source voltage of third transistor M3, and Vini is second source voltage, and Vsd is data-signal electricity
Pressure, C1 are the energy storage parameter of the first memory element C1, and C2 is the energy storage parameter of the second memory element C2.
The present invention uses 6T2C circuit framework, and 2 input signal sources, structure is relatively easy.The circuit course of work is divided into:
(1) T1 stage, that is, initial phase and data write phase:
Since second transistor is connected, the voltage Vg=VDD at the first electrode of the first memory element C1；
Voltage Vs=0, Vgs=VDD at the second electrode of second memory element C2；
6th transistor turns, the voltage Vsd at the first electrode of the first memory element C1.
(2) T2 stage, that is, light emitting phase:
The first transistor conducting, therefore the voltage Vs=VDD at the second electrode of the second memory element C2；
5th transistor turns, second source voltage Vini are applied at the second electrode of the first memory element C1, and first
Voltage at the second electrode of memory element C1 is Vini-Vsd；
Voltage Vg at the first electrode of first memory element C1 is equal to the scaled next voltage of second electrode and adds first
Charging voltage Vg=(Vini-Vsd) C1/ (the C1+C2)+VDD in stage.
The light emitting phase stage, according to formula:
Vgs=Vg-Vs=(Vini-Vsd) C1/ (C1+C2)+VDD-VDD=(Vini-Vsd) C1/ (C1+C2)
It knows that Vgs is unrelated with the size of VDD, furthermore by adjusting the value of capacitor C1/ (C1+C2), realizes to organic light emission
The adjustment of the electric current of diode may further adjust the value range of voltage data signal.
Further, in the driving method of the pixel circuit, in interval stage, the first transistor M1, institute
State second transistor M2, the third transistor M3, the 4th transistor M4, the 5th transistor M5 and the 6th crystalline substance
Body pipe M6 shutdown, the interval stage occurs between the first stage and the second stage, in the first stage with second
Interval stage is set among the stage, the reliability of circuit can be further provided for, when preventing two phase transitions, answer different phase
The transistor of lower conducting simultaneously turns on, and leads to short trouble or leakage current failure.
Table 1
By table 1 it is inferred that the electric current of Organic Light Emitting Diode of the invention value of (5V and 4.5V) at different VDD is divided
It is not 149nA and 151nA, the two difference is only 1.32%, far smaller than in other two structures, organic hair under different VDD
The electric current of optical diode differs ratio, wherein in Fig. 3~4, S1, S2 and S3 are scanning signal, control the initial of display device
Change, control voltage data signal signal write-in capacitor, in Fig. 3, Vreset initializes the current potential of capacity substrate, letter
Number S4 control Vreset reset signal write-in is kept.
In pixel circuit provided by the invention and its driving method, organic electroluminescence device, display device, pass through
One transistor M1, second transistor M2, third transistor M3, the 4th transistor M4, the 5th transistor M5, the 6th transistor M6,
First memory element C1 and the second simple connection relationship of memory element C2 circuit structure, and two control sequentials of input, make
The gate-source voltage of the third transistor M3 is the negative voltage data signal Vsd of second source voltage Vini superposition
Multiple, that is, realize the electric current (proportional to the gate-source voltage of third transistor) of Organic Light Emitting Diode not with first
Supply voltage VDD changes and changes, and avoids the influence of the pressure drop by the first supply voltage VDD.
Further, the storage of the gate-source voltage of third transistor M3 and the first memory element C1 and the second storage unit C2
Energy parameter is associated, and after two energy storage parameters form certain calculating formula, the electric current with Organic Light Emitting Diode is in proportionate relationship,
Adjust the energy storage parameter of the first memory element C1 and the second storage unit C2, so that it may change the electric current of Organic Light Emitting Diode
Size.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.For system disclosed in embodiment
For, due to corresponding to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part illustration
.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (10)
1. a kind of pixel circuit, which is characterized in that the pixel circuit includes the first transistor, second transistor, third crystal
Pipe, the 4th transistor, the 5th transistor, the 6th transistor, the first memory element and the second memory element, in which:
The grid of the first transistor is electrically connected to an emission control driving circuit, the first electrode electricity of the first transistor
It is connected to one first supply voltage, the second electrode of the first transistor is electrically connected to the second electricity of second memory element
Pole；
The grid of the second transistor is electrically connected to a scan drive circuit, the first electrode electrical connection of the second transistor
To first supply voltage, the second electrode of the second transistor is electrically connected to the first electricity of second memory element
Pole；
The grid of the third transistor is electrically connected to the first electrode of first memory element, and the of the third transistor
One electrode is electrically connected to the second electrode of the first transistor, and the second electrode of the third transistor is electrically connected to one and shines
Device；
The grid of 4th transistor is electrically connected to the scan drive circuit, and the first electrode of the 4th transistor is electrically connected
It is connected to a second source voltage, the second electrode of the 4th transistor is electrically connected to the luminescent device；
The grid of 5th transistor is electrically connected to the emission control driving circuit, the first electrode of the 5th transistor
It is electrically connected to the second electrode of first memory element, the second electrode of the 5th transistor is electrically connected to second electricity
Source voltage；
The grid of 6th transistor is electrically connected to the scan drive circuit, and the first electrode of the 6th transistor is electrically connected
It is connected to a data drive circuit, the second electrode of the 6th transistor is electrically connected to the second electricity of first memory element
Pole；
The first electrode of first memory element connects the first electrode of second memory element.
2. pixel circuit as described in claim 1, which is characterized in that the first transistor, the second transistor, described
Third transistor, the 4th transistor, the 5th transistor and the 6th transistor are P-type TFT；
Alternatively, the first transistor, the second transistor, the third transistor, the 4th transistor, the described 5th
Transistor and the 6th transistor are N-type TFT.
3. pixel circuit as described in claim 1, which is characterized in that the control driving of the emission control driving circuit output
Signal and the scanning signal of scan drive circuit output do not overlap.
4. pixel circuit as described in claim 1, which is characterized in that first memory element includes first capacitor element.
5. pixel circuit as described in claim 1, which is characterized in that second memory element includes the second capacity cell.
6. a kind of organic electroluminescence device characterized by comprising
It multiple pixel circuits as described in any one in claim 1-5 and corresponding with multiple pixel circuits multiple shines
Device；
Emission control driving circuit is mentioned by a plurality of control line to the pixel circuit for generating emission control driving signal
For the emission control driving signal；
Data drive circuit provides the number to the pixel circuit by multiple data lines for generating voltage data signal
According to signal voltage；
Scan drive circuit provides the scanning to the pixel circuit by multi-strip scanning line and believes for generating scanning signal
Number.
7. a kind of display device, which is characterized in that including organic electroluminescence device as claimed in claim 6.
8. a kind of driving method of the pixel circuit as described in claim any one of 1-5 characterized by comprising
In the first stage, the second transistor, the 4th transistor and the 6th transistor turns, the first crystal
Pipe and the 5th transistor shutdown, voltage data signal are written into the second electrode of first memory element, and described first
Supply voltage is coupled to the first electrode of first memory element, and the first electrode of the third transistor corresponds to source electrode, institute
The gate-source voltage for stating third transistor is the first supply voltage；
In second stage, the first transistor and the 5th transistor turns, the second transistor, the 4th crystal
Pipe and the 6th transistor shutdown, the luminescent device shine, and first supply voltage is coupled to the second storage member
The second electrode of part, the second source voltage are coupled to the second electrode of first memory element, so that the third is brilliant
The gate-source voltage of body pipe is the multiple of the second source voltage and the superimposed voltage of the voltage data signal.
9. the driving method of pixel circuit as claimed in claim 8, which is characterized in that in second stage, the third crystal
The gate-source voltage of pipe are as follows:
Vgs=(Vini-Vsd) C1/ (C1+C2)
Wherein: Vgs is the gate-source voltage of third transistor, and Vini is second source voltage, and Vsd is voltage data signal, C1
For the energy storage parameter of the first memory element, C2 is the energy storage parameter of the second memory element.
10. the driving method of pixel circuit as claimed in claim 8, which is characterized in that in interval stage, the first crystal
Pipe, the second transistor, the third transistor, the 4th transistor, the 5th transistor and the 6th crystal
Pipe shutdown, the interval stage occur between the first stage and the second stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810055112.5A CN108231003B (en) | 2018-01-19 | 2018-01-19 | Pixel circuit and its driving method, organic electroluminescence device, display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810055112.5A CN108231003B (en) | 2018-01-19 | 2018-01-19 | Pixel circuit and its driving method, organic electroluminescence device, display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108231003A CN108231003A (en) | 2018-06-29 |
| CN108231003B true CN108231003B (en) | 2019-11-22 |
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| CN201810055112.5A Active CN108231003B (en) | 2018-01-19 | 2018-01-19 | Pixel circuit and its driving method, organic electroluminescence device, display device |
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| CN108231003A (en) | 2018-06-29 |
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