CN108220898B

CN108220898B - Preparation method of conductive film, coating equipment, conductive film and electronic device

Info

Publication number: CN108220898B
Application number: CN201711451104.4A
Authority: CN
Inventors: 刘松林; 易伟华; 张迅; 张伯伦; 周慧蓉
Original assignee: WG Tech Jiangxi Co Ltd
Current assignee: Jiangxi Dehong Display Technology Co.,Ltd.
Priority date: 2017-12-27
Filing date: 2017-12-27
Publication date: 2020-09-04
Anticipated expiration: 2037-12-27
Also published as: CN108220898A

Abstract

The invention relates to a preparation method of a conductive film, coating equipment, the conductive film and an electronic device. The preparation method comprises the following steps: plating a barrier layer on the substrate, wherein the material of the barrier layer is at least one of silicon dioxide, silicon nitride and titanium dioxide; plating a first ITO layer on one side of the barrier layer, which is far away from the substrate; plating an enhancement layer on one side of the first ITO layer, which is far away from the barrier layer, wherein the enhancement layer is made of silver or graphene; and argon is used as working gas, in the presence of ozone, and the volume ratio of the ozone to the argon is 1: 8-2: and 9, plating a second ITO layer on one side of the enhancement layer, which is far away from the first ITO layer, so as to obtain the conductive film. The conductive film with higher visible light transmittance and lower resistivity can be prepared at low temperature by the preparation method.

Description

Preparation method of conductive film, coating equipment, conductive film and electronic device

Technical Field

The invention relates to a photoelectric material technology, in particular to a preparation method of a conductive film, coating equipment, the conductive film and an electronic device.

Background

Indium tin oxide films, i.e., ITO films, have low infrared emissivity and good processability, and are widely used in electronic devices such as flat panel electronic devices, thin film solar cells, and organic light emitting electronic devices. With the increasing development of technology, electronic devices tend to be flexible, light, thin and low in power consumption. The conductive film belongs to an important component of an electronic device, and the flexibility, the lightness, the thinness and other properties of the conductive film directly influence the quality and the performance of the electronic device.

Many studies have been conducted to obtain flexible indium tin oxide films by replacing conventional glass substrates with substrates. The flexible indium tin oxide film can increase the flexibility of the electronic product to a certain extent. In general, in order to satisfy the requirements of visible light transmittance and resistivity of an indium tin oxide thin film, an ITO film layer is plated on a substrate at 120 to 200 ℃ and annealed at 200 to 300 ℃. However, the heat resistance of the substrate is poor, and an indium tin oxide film needs to be deposited on the substrate at a low temperature, and the flexible indium tin oxide film obtained by low-temperature deposition has low visible light transmittance and high resistivity, and cannot meet the actual requirements.

Disclosure of Invention

In view of the above, it is necessary to provide a method for manufacturing a conductive thin film, by which a conductive thin film having a high visible light transmittance and a low resistivity can be manufactured at a low temperature.

In addition, a coating apparatus, a conductive film and an electronic device are provided.

A preparation method of a conductive film comprises the following steps:

plating a barrier layer with the thickness of 20 nm-30 nm on the substrate, wherein the material of the barrier layer is at least one of silicon dioxide, silicon nitride and titanium dioxide;

plating a first ITO layer with the thickness of 20 nm-25 nm on one side of the barrier layer, which is far away from the substrate;

plating an enhancement layer with the thickness of 70 nm-80 nm on one side of the first ITO layer, which is far away from the barrier layer, wherein the enhancement layer is made of silver or graphene; and

argon is used as working gas, in the presence of ozone, and the volume ratio of the ozone to the argon is 1: 8-2: and 9, plating a second ITO layer with the thickness of 20 nm-25 nm on the side, far away from the first ITO layer, of the enhancement layer to obtain the conductive film.

In the preparation method, the barrier layer is arranged between the substrate and the first ITO layer, so that the pollution of organic cracking products generated by cracking, air release and the like of the substrate to the first ITO layer can be effectively avoided, the adhesive force of the film layer can be increased, the resistivity of the conductive film can be reduced, the carrier mobility of the film layer can be improved, and the optical performance of the conductive film can be ensured; the second ITO layer is plated under the condition of ozone, so that the second ITO layer can be plated at a low temperature, the substrate is prevented from being deformed due to high temperature, and simultaneously, the odor with high activity is generatedIn addition, the total thickness of the film layer of the conductive film obtained by the preparation method is 130 nm-160 nm, so that an electronic device containing the conductive film is lighter and thinner, and tests prove that the resistivity of the conductive film obtained by the preparation method is 5.5 × 10^-5Ω.cm～5.9×10^-4Omega cm, the visible light transmittance is 82% -90%, and the surface work function of the second ITO film layer is 5.2 eV-5.8 eV.

In one embodiment, the substrate is made of at least one material selected from the group consisting of polyamide, polycarbonate, and polyethylene terephthalate.

In one embodiment, the operation of plating the barrier layer with the thickness of 20 nm-30 nm on the substrate is preceded by cold trap treatment on the substrate.

In one embodiment, the operation of plating the barrier layer with the thickness of 20nm to 30nm on the substrate is preceded by plasma cleaning the substrate, wherein the plasma is ozone plasma.

In one embodiment, in the operation of plating the barrier layer with the thickness of 20nm to 30nm on the substrate, the plating mode is magnetron sputtering, the working pressure is 0.2Pa to 0.5Pa, and the sputtering power is 200W to 300W.

In one embodiment, in the operation of plating the first ITO layer with the thickness of 20nm to 25nm on the side of the barrier layer away from the substrate, the plating mode is magnetron sputtering, the target material is indium oxide and tin oxide with the mass ratio of 8:2 to 9:1, and the working pressure is 3.5 × 10^-3Pa-0.25 Pa, wherein the gas atmosphere is a mixed gas of oxygen and argon, and the volume ratio of the argon to the oxygen is 5: 3-7: 4; and/or the presence of a catalyst in the reaction mixture,

in the operation of plating a second ITO layer with the thickness of 20-25 nm on one side of the enhancement layer far away from the first ITO layer by taking argon as working gas and in the presence of ozone, the plating mode is magnetron sputtering, the target material is indium oxide and tin oxide with the mass ratio of 8: 2-9: 1, and the working pressure is 3.5 × 10^-3Pa～0.25Pa。

In one embodiment, the operation of plating the enhancement layer with the thickness of 70nm to 80nm on the side of the first ITO layer away from the barrier layer is specifically as follows: and in an inert gas atmosphere, performing magnetron sputtering on the enhancement layer on one side of the first ITO layer, which is far away from the barrier layer, by taking silver or graphene as a target under the working pressure of 0.3-0.5 Pa, wherein the sputtering power is 1000-2000W.

In one embodiment, the argon gas is used as a working gas, ozone exists, and the volume ratio of the ozone to the argon gas is 1: 8-2: 9 is obtained by the following operations: ozone with the flow of 100-200 SCCM is introduced into one side of the enhancement layer, which is far away from the first ITO layer, and argon with the flow of 1000-1400 SCCM is introduced into one side of the substrate, which is far away from the barrier layer; or the like, or, alternatively,

argon with the flow rate of 1000-1400 SCCM and oxygen with the flow rate of 600-800 SCCM are introduced, and ultraviolet light with the wavelength of 200-260 nm is used for irradiating one side of the enhancement layer far away from the first ITO layer, wherein the intensity of the ultraviolet light is 300J/m²～400J/m²And the distance between the ultraviolet light source and the side of the enhancement layer far away from the first ITO layer is 50-80 cm.

A plating apparatus comprising:

a first coating mechanism capable of coating a film made of at least one material selected from silicon dioxide and silicon nitride;

the second film coating mechanism can coat an ITO film;

the third film coating mechanism can coat a film layer made of a material selected from silver or graphene; and

and a fourth film plating mechanism capable of plating an ITO film in a mixed gas atmosphere of ozone and argon.

A conductive film prepared by the method of any one of the above embodiments.

An electronic device comprising an anode comprising the conductive film of the above embodiment.

Drawings

FIG. 1 is a schematic structural view of a coating apparatus according to an embodiment;

FIG. 2 is a schematic diagram of an electronic device according to an embodiment;

fig. 3 is a schematic structural diagram of a conductive film according to an embodiment.

Detailed Description

To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

A method for manufacturing a conductive film according to an embodiment includes operations S110 to S160 of:

and S110, cleaning the substrate.

In one embodiment, the material of the substrate is selected from at least one of polyamide, polycarbonate and polyethylene terephthalate. The material of the substrate is not limited to the above materials, and can be used for plating a large-area and uniform film layer, which is beneficial to improving the performance of the conductive film and increasing the flexibility of the conductive film.

Needless to say, the material of the substrate is not limited to the above-mentioned materials, and any other material having the above-mentioned characteristics may be used as the material of the substrate of the present embodiment, for example, PET (polyethylene terephthalate).

In one embodiment, the substrate is a transparent substrate.

In one embodiment, the substrate has a thickness of 0.2mm to 1 mm.

Specifically, S110 includes operations S111 to S112 as follows:

and S111, carrying out ultrasonic cleaning on the substrate.

Specifically, the substrate is ultrasonically cleaned by deionized water for 20 to 30 minutes, and then the substrate ultrasonically cleaned by the deionized water is ultrasonically cleaned by alcohol for 10 to 15 minutes.

The deionized water and alcohol can remove organic solvent, metal ions, dust and other dirt on the surface of the substrate, thereby being beneficial to improving the adhesive force of the film layer when the substrate is coated.

In one embodiment, the substrate is ultrasonically cleaned by deionized water, wherein the temperature of the deionized water is 20-30 ℃, the ultrasonic frequency is 40-50 kHZ, and the ultrasonic power is 500-700W.

In one embodiment, in the ultrasonic cleaning operation of the substrate subjected to ultrasonic cleaning by using alcohol, the mass percentage of ethanol in the alcohol is 70-78%, the temperature of the alcohol is 20-30 ℃, the ultrasonic frequency is 40-50 kHZ, and the ultrasonic power is 500-700W.

In one embodiment, before the step of ultrasonically cleaning the substrate with the deionized water, the step of wiping the substrate with alcohol is further included to primarily remove dirt such as dust, oil stains and the like on the surface of the substrate, so that the dirt contaminates the deionized water for ultrasonic cleaning, and the cleaning effect of the subsequent ultrasonic cleaning is affected.

And S112, carrying out plasma cleaning on the substrate.

Specifically, the substrate is placed in plasma for treatment for 3 to 5 minutes. By processing the substrate with the high-energy, disordered plasma, the residual contamination on the substrate can be more thoroughly removed.

Of course, it should be noted that S112 may be omitted if the substrate after ultrasonic cleaning can meet the coating requirement. It is understood that S111 may be omitted if only plasma cleaning of the substrate is sufficient for the coating.

In one embodiment, the plasma is an ozone plasma.

In one embodiment, before S112 and after S111, drying the substrate after the alcohol ultrasonic cleaning in alcohol vapor is further included.

Of course, the method of drying the substrate after the alcohol ultrasonic cleaning is not limited to the above method, and other drying methods such as natural air drying and gas blow drying may be used, and the gas in the gas blow drying method may be, for example, nitrogen gas.

And S120, performing cold trap processing on the substrate.

Specifically, the substrate is placed at a temperature of between 130 ℃ below zero and 150 ℃ below zero for cold trap treatment for 30 to 60 seconds to remove the water vapor, oil vapor, organic impurities and other dirt carried by the substrate, so that the subsequent coating operation is prevented from being influenced by the dirt, and the adhesive force of the film layer can be improved.

Of course, if the requirement of plating can be achieved only by performing the cold trap treatment, S110 may be omitted.

And S130, plating a barrier layer with the thickness of 20 nm-30 nm on the substrate.

The barrier layer is plated on the substrate in advance, so that organic cracking substances generated by cracking, air release and the like of the substrate can be effectively prevented from polluting a film layer plated on the barrier layer subsequently, and the adhesive force of the film layer can be increased.

In one embodiment, the material of the barrier layer is at least one of silicon dioxide, silicon nitride and titanium dioxide.

In one embodiment, the method for plating the barrier layer on the substrate after the cold trap treatment is magnetron sputtering.

Preferably, the mode of plating the barrier layer is radio frequency sputtering.

In one embodiment, the operation of plating the barrier layer specifically comprises: under the oxygen atmosphere, at least one of silicon dioxide, silicon and silicon nitride is used as a target material to carry out magnetron sputtering on the barrier layer on the substrate after the cold trap treatment, the working pressure is 0.2Pa to 0.5Pa, the sputtering power is 200W to 300W, the material of the barrier layer is silicon dioxide, and the flow rate of oxygen is 600SCCM to 800 SCCM.

In one embodiment, the operation of plating the barrier layer specifically comprises: under the nitrogen atmosphere, at least one of silicon dioxide, silicon and silicon nitride is used as a target material to carry out magnetron sputtering on the barrier layer on the substrate after the cold trap treatment, the working pressure is 0.2Pa to 0.5Pa, the sputtering power is 200W to 300W, the material of the barrier layer is silicon nitride, and the flow rate of nitrogen is 600SCCM to 800 SCCM.

In one embodiment, the operation of plating the barrier layer specifically comprises: under the oxygen atmosphere, the titanium dioxide is used as a target material to carry out magnetron sputtering on the barrier layer on the substrate after the cold trap treatment, the working pressure is 0.2Pa to 0.5Pa, the sputtering power is 200W to 300W, the material of the barrier layer is titanium dioxide, and the flow of the oxygen is 600SCCM to 800 SCCM.

In one embodiment, the substrate is placed on a fixture for coating the barrier layer, wherein the operation speed of the fixture is 1-1.5 mL/min, and the coating time is 40-60 seconds.

In one embodiment, the substrate is at a temperature of 60 ℃ to 80 ℃ during the process of plating the barrier layer on the substrate.

In one embodiment, before S130 and after S120, the method further includes providing a heat conductive layer on one side of the substrate, and plating the barrier layer on a side of the substrate away from the heat conductive layer.

Through set up the heat-conducting layer in one side of base plate, can promote the base plate heat dissipation, and then avoid the heat gathering that produces in the coating process to influence subsequent coating operation. Of course, it should be noted that the heat conducting layer may be omitted if the temperature of the substrate can meet the requirement of the plating film. It is understood that the heat conductive layer may be removed after the conductive film is prepared.

In one embodiment, the thermally conductive layer is a thermally conductive paste.

In one embodiment, the thickness of the thermally conductive layer is 300nm to 500 nm.

Of course, if the cleanliness of the substrate can meet the requirement of the coating film, S110 and S120 can be omitted.

And S140, plating a first ITO layer with the thickness of 20 nm-25 nm on the side, far away from the substrate, of the barrier layer.

Through setting up first ITO layer for conductive film has better conductivity and visible light transmissivity, can also make conductive film have better electron radiation prevention, anti ultraviolet and prevent far infrared's ability simultaneously.

In one embodiment, the mass ratio of indium oxide to tin oxide in the first ITO layer is 8:2 to 9: 1.

In one embodiment, in the operation of plating the first ITO layer on the side of the barrier layer away from the substrate, the plating mode is magnetron sputtering. Of course, the method for plating the first ITO layer on the side of the barrier layer away from the substrate is not limited to the above-mentioned method, and other plating methods, such as a paste coating method, may be used.

In one embodiment, in the operation of magnetron sputtering the first ITO layer on the side of the barrier layer far away from the substrate, the sputtering frequency is 3000W-3600W, the target material is indium oxide and tin oxide with the mass ratio of 8: 2-9: 1, the gas atmosphere is the mixed atmosphere of oxygen and argon, the volume ratio of argon to oxygen is 5: 3-7: 4, and the working pressure is 3.5 × 10^-3Pa to 0.25Pa, and the distance between the target and the side of the barrier layer far away from the substrate is 80 mm to 100 mm.

In one embodiment, the flow rate of oxygen is 600 to 800SCCM and the flow rate of argon is 1000 to 1400SCCM in a mixed atmosphere of oxygen and argon.

In one embodiment, the substrate with the barrier layer plated is placed on a clamp to plate the first ITO layer, the running speed of the clamp is 1.2-1.5 mL/min, and the coating time is 50-70 seconds.

In one embodiment, the temperature of the substrate and the plated film layer is 60 ℃ to 80 ℃ during the plating of the first ITO layer.

S150, plating an enhancement layer with the thickness of 70 nm-80 nm on the side, far away from the barrier layer, of the first ITO layer, wherein the enhancement layer is made of silver or graphene.

The concentration and the mobility of the current carrier influence the photoelectric performance of the conductive film, the higher the concentration of the current carrier is, the more favorable the conductivity of the conductive film is, but the too high concentration of the current carrier causes the distortion of the lattice structure in the first ITO layer, seriously influences the mobility of the current carrier, and further influences the photoelectric performance of the conductive film. Because the enhancement layer has higher conductivity and transmissivity, the resistivity of the conductive film can be reduced, the carrier mobility of the film layer can be improved, and the optical performance of the conductive film is ensured.

Of course, it should be noted that the material of the enhancement layer is not limited to the above-mentioned material, but may be gold, copper or aluminum.

Preferably, the material of the reinforcement layer is silver. The relatively low price of silver is beneficial to reducing the production cost of the conductive film.

In one embodiment, the method for plating the enhancement layer on the side of the first ITO layer away from the barrier layer is magnetron sputtering. Of course, the method for plating the enhancement layer is not limited to the above method, and other plating methods may be used, for example, the enhancement layer may be plated on the side of the first ITO layer away from the barrier layer by printing.

Further, the magnetron sputtering method is direct current magnetron sputtering.

Furthermore, the operation of plating the enhancement layer on the side of the first ITO layer away from the barrier layer specifically comprises: and in an inert gas atmosphere, performing magnetron sputtering on the enhancement layer on one side of the first ITO layer, which is far away from the barrier layer, by taking silver or graphene as a target under the working pressure of 0.3-0.5 Pa, wherein the sputtering power is 1000-2000W.

In one embodiment, the inert gas atmosphere is argon or nitrogen.

In one embodiment, the substrate coated with the first ITO layer is placed on a clamp for coating the enhancement layer, the running speed of the clamp is 1.0-1.5 mL/min, and the coating time is 40-60 seconds.

In one embodiment, the temperature of the substrate and the plated film layer is 60 ℃ to 80 ℃ during plating of the enhancement layer.

S160, taking argon as working gas, in the presence of ozone, wherein the volume ratio of the ozone to the argon is 1: 8-2: and 9, plating a second ITO layer with the thickness of 20 nm-25 nm on the side, far away from the first ITO layer, of the enhancement layer to obtain the conductive film.

The second ITO layer can be plated at a low temperature by plating the second ITO layer in the presence of ozone, and the high-activity ozone can enable indium to be oxidized more easily to produce indium oxide, so that the indium is prevented from being converted into black non-conductive indium oxide (InO) due to insufficient oxygen or being directly deposited in a metal atom form to reduce the visible light transmittance of the conductive film, the conductivity of the conductive film is prevented from being reduced due to overhigh oxygen concentration, and the obtained conductive film has high visible light transmittance and low resistivity. Meanwhile, the second ITO layer is arranged to prevent metal ions in the enhancement layer from being exposed to atmosphere and oxidized.

In one embodiment, the mass ratio of indium oxide to tin oxide in the second ITO layer is 8:2 to 9: 1.

In one embodiment, the second ITO layer is plated by magnetron sputtering. Of course, the method for plating the second ITO layer is not limited to the above-mentioned method, and may be a paste method or a screen printing method.

In one embodiment, in the operation of magnetron sputtering the second ITO layer on the side of the enhancement layer far away from the first ITO layer, the sputtering frequency is 3000W-3600W, the target is indium oxide and tin oxide with the mass ratio of 8: 2-9: 1, and the working pressure is 3.5 × 10^-3Pa to 0.25Pa, and the distance between the target and the side of the enhancement layer far away from the first ITO layer is 80 mm to 100 mm.

In one embodiment, the substrate coated with the enhancement layer is placed on a fixture for coating the second ITO layer, the operation speed of the fixture is 1.2-1.5 mL/min, and the coating time is 50-70 seconds.

In one embodiment, the temperature of the substrate and the plated film layer is 60 ℃ to 80 ℃ during the plating of the second ITO layer.

In one embodiment, argon is used as a working gas, in the presence of ozone, and the volume ratio of the ozone to the argon is 1: 8-2: 9 is obtained by the following operations: ozone with the flow rate of 100-200 SCCM is introduced into the enhancement layer at the side far away from the first ITO layer, and argon with the flow rate of 1000-1400 SCCM is introduced into the substrate at the side far away from the barrier layer.

In one embodiment, argon is used as a working gas, in the presence of ozone, and the volume ratio of the ozone to the argon is 1: 8-2: 9 is obtained by the following operations: argon with the flow rate of 1000-1400 SCCM and oxygen with the flow rate of 600-800 SCCM are introduced, and ultraviolet light with the wavelength of 200-260 nm is used for irradiating one side of the enhancement layer far away from the first ITO layer, wherein the intensity of the ultraviolet light is 300J/m²～400J/m²And the distance between the ultraviolet light source and the side of the enhancement layer far away from the first ITO layer is 50-80 cm.

Of course, the plating process of the first ITO layer in S140 is not limited to the above-mentioned process, and the first ITO layer may be plated according to the process of plating the second ITO layer in S160.

The preparation method of the conductive film at least has the following advantages:

(1) in the preparation method, the barrier layer is arranged between the substrate and the first ITO layer, so that the pollution of organic cracking products generated by cracking, air release and the like of the substrate to the first ITO layer can be effectively avoided, the adhesive force of the film layer can be increased, the resistivity of the conductive film can be reduced and the carrier mobility of the film layer can be improved by arranging the enhancement layer, so that the optical performance of the conductive film is ensured, the second ITO layer is plated under the condition of ozone existence, the substrate is prevented from being denatured due to high temperature, the indium can be easily oxidized to produce indium oxide by the high-activity ozone, the visible light transmittance of the conductive film is enhanced, and the resistivity of the conductive film is reduced^-5Ω.cm～5.9×10^-4Omega, cm, visible light transmittance of 82% -90%, and a second ITO film layerThe surface work function of (A) is 5.2eV to 5.8 eV.

(2) In the above preparation method, the material of the substrate of the conductive film is at least one selected from polyamide, polycarbonate and polyethylene terephthalate, which is beneficial to improving the performance of the conductive film and increasing the flexibility of the conductive film.

(3) The preparation method also comprises the steps of carrying out ultrasonic cleaning and plasma cleaning on the substrate, removing organic solvents, metal ions, dust and other dirt on the surface of the substrate, being beneficial to improving the adhesive force of a film layer when the substrate is coated and being convenient for the subsequent coating operation of the substrate.

(4) According to the preparation method, the substrate is subjected to cold trap treatment, so that the dirt such as water, organic impurities and the like carried by the substrate can be removed, the dirt is prevented from influencing the subsequent coating operation, and the adhesive force of the film layer can be improved.

As shown in fig. 1, a coating apparatus 100 according to an embodiment includes a cleaning device 110, a coating device 130, and a sheet discharging device 140.

The cleaning device 110 includes an ultrasonic cleaning mechanism 111, a drying mechanism 113, a sheet feeding mechanism 115, and a plasma cleaning mechanism 117. In the illustrated embodiment, the ultrasonic cleaning mechanism 111, the drying mechanism 113, the sheet feeding mechanism 115, and the plasma cleaning mechanism 117 are provided in this order. The ultrasonic cleaning mechanism 111 is used for ultrasonically cleaning a substrate to be coated. The ultrasonic frequency of the ultrasonic cleaning mechanism 111 is 40-50 kHZ, and the ultrasonic power is 500-700W.

In one embodiment, the ultrasonic cleaning mechanism 111 is an ultrasonic cleaning machine. Of course, the ultrasonic cleaning mechanism 111 is not limited to the ultrasonic cleaning machine, and may be a flow-type cleaning machine. Preferably, the ultrasonic cleaning mechanism 111 is an ultrasonic cleaning machine model M05C from Kodak.

In one embodiment, the material of the substrate is selected from at least one of polyamide, polycarbonate and polyethylene terephthalate.

In one embodiment, the substrate is a transparent substrate.

In one embodiment, the substrate has a thickness of 0.2mm to 1 mm.

In one embodiment, the substrate to be coated is subjected to deionized water ultrasonic cleaning and alcohol ultrasonic cleaning in sequence. The deionized water and alcohol can remove organic solvent, metal ions, dust and other dirt on the surface of the substrate, thereby being beneficial to improving the adhesive force of the film layer when the substrate is coated.

In one embodiment, the deionized water is ultrasonically cleaned on the substrate, wherein the temperature of the deionized water is 20-30 ℃, the ultrasonic frequency is 40-50 kHZ, and the ultrasonic power is 500-700W.

In one embodiment, in the alcohol ultrasonic cleaning operation of the substrate subjected to ultrasonic cleaning by deionized water, the mass percentage of ethanol in the alcohol is 70-78%, the temperature of the alcohol is 20-30 ℃, the ultrasonic frequency is 40-50 kHZ, and the ultrasonic power is 500-700W.

In one embodiment, before the substrate is cleaned by the ultrasonic cleaning mechanism 111, the substrate is wiped by alcohol to primarily remove dirt such as dust, oil stain and the like on the surface of the substrate, so as to prevent the dirt from polluting deionized water for ultrasonic cleaning and affecting the cleaning effect of subsequent ultrasonic cleaning.

The drying mechanism 113 is used to dry the substrate after the ultrasonic cleaning.

In one embodiment, the drying mechanism 113 is an alcohol vapor drying mechanism, a drying mechanism, or a vacuum drying mechanism.

In the present embodiment, the drying mechanism 113 is an alcohol vapor dryer. The moisture and the like on the substrate surface are quickly evaporated by condensation of the alcohol vapor.

The sheet feeding mechanism 115 is used for placing a substrate to be coated. In the sheet feeding mechanism 111, a clamping unit (not shown) for clamping a substrate to be coated and a transfer unit (not shown) for transferring the substrate to each mechanism and apparatus are provided.

In one embodiment, a thermally conductive layer is disposed on one side of the substrate, and the substrate with the electrically conductive layer disposed thereon is secured in the clamping assembly such that the thermally conductive layer is between the substrate and the clamping assembly. The heat conducting layer is arranged on one side of the substrate, so that heat dissipation of the substrate can be promoted, and further the condition that heat accumulation generated in the coating process influences subsequent coating operation on the substrate is avoided. Of course, it should be noted that the heat conducting layer may be omitted if the temperature of the substrate can meet the requirement of the plating film. It is understood that the heat conductive layer may be removed after the conductive film is prepared.

The plasma cleaning mechanism 117 is used for plasma cleaning the substrate. By processing the substrate with the high-energy, disordered plasma, the residual contamination on the substrate can be more thoroughly removed.

In one embodiment, the plasma cleaning mechanism 117 is a plasma cleaner. Of course, the plasma cleaning mechanism 117 is not limited to the plasma cleaning machine, and may be a flow type cleaning machine. Preferably, the plasma cleaning mechanism 117 is a PC020 model plasma cleaner available from luzhen corporation.

The coating device 130 includes a first coating mechanism 131, a cold trap mechanism (not shown), a second coating mechanism 133, a third coating mechanism 135, a fourth coating mechanism 137, and a gas generating mechanism (not shown). In the illustrated embodiment, the first coating mechanism 131, the second coating mechanism 133, the third coating mechanism 135, and the fourth coating mechanism 137 are provided in this order.

The cold trap mechanism can provide cold trap treatment at-130 ℃ to-150 ℃.

In one embodiment, the cold trap mechanism is used for performing cold trap processing on the substrate at-130 ℃ to-150 ℃. The cold trap treatment can remove water, oil, organic impurities and other pollutants carried by the substrate, and the impurities are prevented from polluting the coating mechanism 131 and influencing the subsequent coating operation.

Specifically, after the substrate is transferred to the first coating mechanism 131, and before coating is started, the first coating mechanism 131 is subjected to cold trap treatment by the cold trap mechanism to remove the contaminants such as water, oil, and organic impurities carried by the substrate.

More specifically, the first film coating mechanism 131 is subjected to cold trap processing for 30 to 60 seconds by setting the temperature of the cold trap mechanism at-130 to-150 ℃.

The first coating mechanism 131 can coat a film made of at least one material selected from silicon dioxide and silicon nitride. In this embodiment, the first plating mechanism 131 is used to plate a barrier layer made of at least one material selected from silicon dioxide and silicon nitride on the side of the substrate away from the heat conductive layer.

In one embodiment, the first coating mechanism 131 is a magnetron sputtering coating mechanism. Of course, the first coating mechanism 131 is not limited to a magnetron sputtering coating mechanism, and may be another coating mechanism, such as an evaporation coating mechanism.

Preferably, the first coating mechanism 131 is a radio frequency sputtering coating mechanism.

In one embodiment, the barrier layer has a thickness of 20nm to 30 nm. Preferably, the thickness of the barrier layer is 20nm to 30 nm.

In one embodiment, the specific operations of plating the barrier layer are as follows: under the oxygen atmosphere, at least one of silicon dioxide, silicon and silicon nitride is used as a target material to carry out magnetron sputtering on the barrier layer on the substrate after the cold trap treatment, the working pressure is 0.2Pa to 0.5Pa, the sputtering power is 200W to 300W, the material of the barrier layer is silicon dioxide, and the flow rate of oxygen is 600SCCM to 800 SCCM.

In one embodiment, the specific operations of plating the barrier layer are as follows: under the nitrogen atmosphere, at least one of silicon dioxide, silicon and silicon nitride is used as a target material to carry out magnetron sputtering on the barrier layer on the substrate after the cold trap treatment, the working pressure is 0.2Pa to 0.5Pa, the sputtering power is 200W to 300W, the material of the barrier layer is silicon nitride, and the flow rate of nitrogen is 600SCCM to 800 SCCM.

In one embodiment, the running speed of the substrate is 1mL/min to 1.5mL/min, and the coating time is 40 seconds to 60 seconds.

The second plating mechanism 133 can plate an ITO film. In this embodiment, the second coating mechanism 133 is used to coat the first ITO layer on the side of the barrier layer away from the substrate. Through setting up first ITO layer for conductive film has better conductivity and visible light transmissivity, can also make conductive film have better electron radiation prevention, anti ultraviolet and prevent far infrared's ability simultaneously.

In one embodiment, the second coating mechanism 133 is a magnetron sputtering coating mechanism. Of course, the second coating mechanism 133 is not limited to the magnetron sputtering coating mechanism, and may be another coating mechanism, such as an evaporation coating mechanism.

In one embodiment, the first ITO layer has a thickness of 20nm to 25 nm.

In one embodiment, the operation of plating the first ITO layer is specifically that in a mixed gas atmosphere of argon and oxygen with a volume ratio of 5: 3-7: 4, indium oxide and tin oxide with a mass ratio of 8: 2-9: 1 are used as targets to perform magnetron sputtering on the side, far away from the substrate, of the barrier layer to form the first ITO layer, the sputtering frequency is 3000W-3600W, and the working pressure is 3.5 × 10^-3Pa to 0.25Pa, and the distance between the target and the side of the barrier layer far away from the substrate is 80 mm to 100 mm.

In one embodiment, the running speed of the substrate is 1.2mL/min to 1.5mL/min and the coating time is 50 seconds to 70 seconds during the process of coating the first ITO layer.

The third plating mechanism 135 can plate a film of a material selected from silver or graphene. In this embodiment, the third plating mechanism 135 is used to plate an enhancement layer of a material selected from silver or graphene. Because the enhancement layer has higher conductivity and transmissivity, the resistivity of the conductive film can be reduced, the carrier mobility of the film layer can be improved, and the optical performance of the conductive film is ensured.

In one embodiment, the enhancement layer has a thickness of 70nm to 80 nm.

In one embodiment, the third coating mechanism 135 is a magnetron sputtering coating mechanism. Of course, the third coating mechanism 135 is not limited to the magnetron sputtering coating mechanism, and may be another coating mechanism, such as a printing mechanism.

In the present embodiment, the third coating mechanism 135 is a dc magnetron sputtering coating mechanism.

In one embodiment, the operation of plating the enhancement layer specifically comprises: and in an inert gas atmosphere, performing magnetron sputtering on the enhancement layer on one side of the first ITO layer, which is far away from the barrier layer, by taking silver or graphene as a target under the working pressure of 0.3-0.5 Pa, wherein the sputtering power is 1000-2000W.

In one embodiment, the running speed of the substrate is 1.0mL/min to 1.5mL/min and the coating time is 40 seconds to 60 seconds in the process of coating the enhancement layer.

In one embodiment, the inert gas is nitrogen or argon.

The fourth coating mechanism 137 can coat an ITO film in the presence of ozone using argon gas as a working gas. In this embodiment, the fourth coating mechanism 137 is used for coating the second ITO layer in the presence of ozone using argon gas as a working gas. Through setting up the second ITO layer for conductive film has better conductivity and visible light transmissivity, can also make conductive film have better electron radiation prevention, anti ultraviolet and prevent far infrared's ability simultaneously.

In one embodiment, the fourth coating mechanism 137 is a magnetron sputtering coating mechanism. Of course, the fourth coating mechanism 137 is not limited to a magnetron sputtering coating mechanism, and may be another coating mechanism, for example, an evaporation coating mechanism.

In one embodiment, the second ITO layer has a thickness of 20nm to 25 nm.

In one embodiment, the operation of plating the second ITO layer is specifically: argon is used as working gas, in the presence of ozone, and the volume ratio of the ozone to the argon is 1: 8-2: and 9, plating a second ITO layer on one side of the enhancement layer, which is far away from the first ITO layer, so as to obtain the conductive film.

The second ITO layer can be plated at a low temperature by plating the second ITO layer under the condition of ozone, and the high-activity ozone can enable indium to be oxidized more easily to produce indium oxide, so that the situation that the indium is converted into black non-conductive indium oxide (InO) due to insufficient oxygen or is directly deposited in a metal atom form to cause the reduction of the visible light transmittance of the conductive film is avoided, the situation that the conductivity of the conductive film is reduced due to overhigh oxygen concentration is also avoided, and the obtained conductive film has high visible light transmittance and low resistivity. Meanwhile, the second ITO layer is arranged to prevent metal ions in the enhancement layer from being exposed to atmosphere and oxidized.

In one embodiment, the running speed of the substrate is 1.2mL/min to 1.5mL/min and the coating time is 50 seconds to 70 seconds during the process of coating the second ITO layer.

The gas generating mechanism is used for providing the fourth coating mechanism 137 with a volume ratio of 1: 8-2: 9 ozone and argon.

In one embodiment, the gas generating mechanism is used to directly introduce ozone and argon gas into the fourth coating mechanism 137.

Furthermore, the flow rate of ozone introduced into the fourth coating mechanism 137 is 100 SCCM-200 SCCM, and the flow rate of argon is 1000 SCCM-1400 SCCM.

Specifically, ozone with the flow rate of 100-200 SCCM is introduced into one side of the enhancement layer away from the first ITO layer, and argon with the flow rate of 1000-1400 SCCM is introduced into one side of the substrate away from the barrier layer.

In one embodiment, the gas generating mechanism includes a gas generator for supplying oxygen and argon to the fourth coating mechanism 137 and an ultraviolet generator. Wherein the uv generator is placed in the fourth coater 137 for irradiating the substrate. The distance between an ultraviolet light source of the ultraviolet generator and one side of the enhancement layer far away from the first ITO layer is 50-80 cm.

Further, argon is used as working gas, in the presence of ozone, and the volume ratio of the ozone to the argon is 1: 8-2: 9 is obtained by the following operations: argon gas with the flow rate of 1000-1400 SCCM and oxygen gas with the flow rate of 600-800 SCCM are introduced into the fourth coating mechanism 137, and ultraviolet light with the wavelength of 200-260 nm is used for irradiating one side of the enhancement layer far away from the first ITO layer, wherein the intensity of the ultraviolet light is 300J/m²～400J/m²And the distance between the ultraviolet light source and the side of the enhancement layer far away from the first ITO layer is 50-80 cm.

The sheet discharging device 140 is used for packaging the conductive film.

The coating device 100 has at least the following advantages:

(1) the conductive film with lower resistivity and higher visible light transmittance can be manufactured by the coating equipment 100, and the coating equipment 100 is simple in structure and convenient to operate.

(2) The coating equipment 100 comprises a cold trap mechanism, and water, oil, organic impurities and other pollutants carried by the substrate can be removed through cold trap treatment, so that the impurities are prevented from polluting the coating mechanism 131 and influencing subsequent coating operation.

It is understood that when the substrate cleaned by the plasma cleaning mechanism 117 can meet the coating requirement, both the ultrasonic cleaning mechanism 111 and the drying mechanism 113 may be omitted.

It is understood that when the substrate can meet the coating requirement, the ultrasonic cleaning mechanism 111, the drying mechanism 113, the plasma cleaning mechanism 117 and the cold trap mechanism can be omitted.

As shown in fig. 2, an electronic device 200 according to an embodiment includes a conductive film 210, a light emitting layer 220, a cathode 230, and a flexible cover 240, which are sequentially stacked, wherein the conductive film 210 is prepared by the preparation method according to the embodiment.

As shown in fig. 3, the conductive film 210 includes a substrate 211, a barrier layer 213, a first ITO layer 215, a reinforcing layer 217, and a second ITO layer 219, which are sequentially stacked. The conductive film 210 serves as an anode of the electronic device 200. The conductive film 210 has a relatively low resistivity, a relatively high electron mobility, and a relatively high surface work function, so that the electronic device 200 has relatively good light-emitting efficiency and photoelectric properties.

In one embodiment, the substrate 211 has a thickness of 0.2mm to 1 mm.

In one embodiment, the material of the substrate 211 is at least one selected from the group consisting of polyamide, polycarbonate, and polyethylene terephthalate.

The barrier layer 213 is laminated on one side of the substrate 211.

In one embodiment, barrier layer 213 has a thickness of 20nm to 30 nm.

In one embodiment, the material of the barrier layer 213 is at least one of silicon dioxide and silicon nitride.

In one embodiment, a first ITO layer 215 is laminated on the side of barrier layer 213 away from substrate 211.

In one embodiment, the first ITO layer 215 has a thickness of 20nm to 25 nm.

In one embodiment, the mass ratio of indium oxide to tin oxide in the first ITO layer 215 is 8:2 to 9: 1.

The enhancement layer 217 is laminated to the first ITO layer 215 on a side away from the barrier layer 213.

In one embodiment, the enhancement layer 217 has a thickness of 70nm to 80 nm.

In one embodiment, the material of the enhancement layer 217 is silver or graphene. Of course, it should be noted that the material of the enhancement layer 217 is not limited to the above-mentioned material, and may be gold, copper or aluminum.

Preferably, the material of the reinforcing layer 217 is silver. Since the price of silver is relatively low, it is advantageous to reduce the production cost of the conductive film 200.

A second ITO layer 219 is laminated to the side of the reinforcing layer 217 remote from the first ITO layer 215.

In one embodiment, the second ITO layer 219 has a thickness of 20nm to 25 nm.

In one embodiment, the mass ratio of indium oxide to tin oxide in the second ITO layer 219 is 8:2 to 9: 1.

The light emitting layer 220 is disposed on a side of the second ITO layer 219 away from the reinforcing layer 217.

In one embodiment, the light-emitting layer 220 has a thickness of 60nm to 80 nm.

In one embodiment, the material of the light emitting layer 220 is 4,4 '-bis (9-carbazole) biphenyl, 9' - (1, 3-phenyl) bis-9H-carbazole, or 2-tert-butyl-4- (dicyanomethylene) -6- [2- (1,1,7, 7-tetramethyljulolidin-9-yl) vinyl ] -4H-pyran.

The cathode 230 is disposed on a side of the light-emitting layer 220 away from the conductive film 210.

In one embodiment, cathode 230 has a thickness of 30nm to 50 nm.

In one embodiment, the material of cathode 230 is silver or aluminum.

A flexible cover 240 is disposed on a side of the cathode 230 remote from the light-emitting layer 220.

In one embodiment, the flexible cover 240 has a thickness of 0.1mm to 0.5 mm.

In one embodiment, the material of the flexible cover 240 is PET or PI (Polyimide).

Of course, the electronic device 200 may further include at least one of a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer.

The electronic device 200 described above has at least the following advantages:

the electronic device 200 uses the conductive film 210 as an anode, and the conductive film 210 has a relatively low resistivity, a relatively high electron mobility, and a relatively high surface work function, so that the electronic device 200 has relatively good light-emitting efficiency and photoelectric properties.

The following are specific examples.

Example 1

The preparation process of the conductive film of this example is as follows:

(1) and (3) placing the substrate in deionized water for ultrasonic cleaning for 20 minutes, then placing the substrate in alcohol with the ethanol mass percentage content of 70% for ultrasonic cleaning for 10 minutes, after the ultrasonic cleaning is finished, performing alcohol steam drying on the substrate, and then performing plasma cleaning on the substrate for 3 minutes. The substrate is made of polyamide, the temperature of deionized water is 20 ℃, the ultrasonic frequency of the deionized water is 40kHZ, the ultrasonic power of the deionized water is 500W, the temperature of alcohol is 20 ℃, the ultrasonic frequency of the alcohol is 40kHZ, the ultrasonic power of the alcohol is 500W, and plasma is ozone.

(2) Arranging 300nm of heat-conducting glue on one side of the substrate obtained in the step (1), placing the substrate on a clamp, positioning the heat-conducting glue between the substrate and the clamp, and then carrying out cold trap treatment on the substrate for 60 seconds by using a cold trap mechanism at the temperature of-130 ℃. After the cold trap treatment is finished, in an oxygen atmosphere, performing magnetron sputtering on a 20nm barrier layer on one side of the substrate, which is far away from the heat-conducting glue, by using silicon dioxide as a target material, wherein the barrier layer is made of silicon dioxide, the working pressure is 0.2Pa, the sputtering power is 200W, the flow of oxygen is 600SCCM, the running speed is 1mL/min, the coating time is 40 seconds, and the temperature of the substrate is 60 ℃.

(3) In the mixed gas atmosphere of oxygen and argon, indium oxide and tin oxide with the mass ratio of 8:2 are used as targets, a first ITO layer with the thickness of 20nm is subjected to magnetron sputtering on the side, away from the substrate, of the barrier layer, wherein the working pressure is 3.5 × 10^-3Pa，The distance between the target and the side of the barrier layer far away from the substrate is 80 mm, the sputtering frequency is 3000W, the operating speed of the clamp is 1.2mL/min, the coating time is 50 seconds, the temperature of the substrate and the coated film layer is 60 ℃, the flow of oxygen is 600SCCM, and the flow of argon is 1000 SCCM.

(4) And in an argon gas atmosphere, performing magnetron sputtering on a 70nm reinforcing layer on one side of the first ITO layer, which is far away from the barrier layer, by taking silver as a target under the working pressure of 0.3 Pa. Wherein the sputtering power is 1000W, the operation speed of the clamp is 1.0mL/min, the coating time is 40 seconds, and the temperature of the substrate and the coated film layer is 80 ℃.

(5) And introducing ozone with the flow rate of 100SCCM to one side of the enhancement layer, which is far away from the first ITO layer, introducing argon with the flow rate of 1000SCCM to one side of the substrate, which is far away from the barrier layer, and performing magnetron sputtering on a second ITO layer with the flow rate of 20nm on one side of the enhancement layer, which is far away from the first ITO layer, by taking indium oxide and tin oxide with the mass ratio of 9:1 as targets to obtain the conductive film. Wherein the working pressure is 0.25Pa, the distance between the target and one side of the enhancement layer far away from the first ITO layer is 80 mm, the sputtering frequency is 3600W, the operating speed of the clamp is 1.2mL/min, the coating time is 50 seconds, and the temperature of the substrate and the coated film layer is 80 ℃.

Example 2

The preparation process of the conductive film of this example is as follows:

(1) and (3) placing the substrate in deionized water for ultrasonic cleaning for 22 minutes, then placing the substrate in alcohol with the ethanol mass percentage of 72% for ultrasonic cleaning for 4 minutes, after the ultrasonic cleaning is finished, performing alcohol steam drying on the substrate, and then performing plasma cleaning on the substrate for 4 minutes. The substrate is made of polycarbonate, the temperature of deionized water is 22 ℃, the ultrasonic frequency of the deionized water is 42kHZ, the ultrasonic power of the deionized water is 550W, the temperature of alcohol is 23 ℃, the ultrasonic frequency of the alcohol is 42kHZ, the ultrasonic power of the alcohol is 550W, and plasma is ozone.

(2) And (2) arranging 320nm of heat-conducting glue on one side of the substrate obtained in the step (1), placing the substrate on a clamp, positioning the heat-conducting glue between the substrate and the clamp, and then carrying out cold trap treatment on the substrate for 30 seconds by using a cold trap mechanism at the temperature of 150 ℃ below zero. After the cold trap treatment is finished, in an oxygen atmosphere, performing magnetron sputtering on a 22nm barrier layer on one side, away from the heat-conducting adhesive, of the substrate subjected to the cold trap treatment by using silicon as a target material, wherein the barrier layer is made of silicon dioxide, the working pressure is 0.5Pa, the sputtering power is 350W, the flow of oxygen is 620SCCM, the running speed is 1.2mL/min, the coating time is 45 seconds, and the temperature of the substrate is 80 ℃.

(3) And in the mixed gas atmosphere of oxygen and argon, indium oxide and tin oxide with the mass ratio of 9:1 are used as targets, and a first ITO layer with the thickness of 22nm is subjected to magnetron sputtering on the side, away from the substrate, of the barrier layer. Wherein the working pressure is 0.25Pa, the distance between the target and the side of the barrier layer far away from the substrate is 80 mm, the sputtering frequency is 3600W, the operating speed of the clamp is 1.3mL/min, the coating time is 45 seconds, the temperature of the substrate and the coated film layer is 80 ℃, the flow of oxygen is 660SCCM, and the flow of argon is 1200 SCCM.

(4) And in an argon gas atmosphere, performing magnetron sputtering on a 70nm reinforcing layer on one side of the first ITO layer, which is far away from the barrier layer, by taking silver as a target under the working pressure of 0.5Pa, wherein the sputtering power is 1200W. Wherein the operation speed of the clamp is 1.3mL/min, the coating time is 50 seconds, and the temperature of the substrate and the coated film layer is 60 ℃.

(5) In the mixed gas atmosphere of oxygen and argon, indium oxide and tin oxide with the mass ratio of 8:2 are used as targets, ultraviolet light with the wavelength of 260nm is used for irradiating one side, far away from the first ITO layer, of the enhancement layer, a second ITO layer with the wavelength of 25nm is subjected to magnetron sputtering on one side, far away from the first ITO layer, of the enhancement layer, and the conductive film is obtained, wherein the working pressure is 3.5 × 10^-3Pa, the distance between the target and the side of the enhancement layer far away from the first ITO layer is 80 mm, the sputtering frequency is 3000W, the operating speed of the clamp is 1.5mL/min, the coating time is 60 seconds, the temperature of the substrate and the coated film layer is 60 ℃, the flow of oxygen is 800SCCM, the flow of argon is 1400SCCM, and the intensity of ultraviolet light is 400J/m²And the distance between the ultraviolet light source and the side of the enhancement layer far away from the first ITO layer is 80 cm.

Example 3

The preparation process of the conductive film of this example is as follows:

(1) and (3) placing the substrate in deionized water for ultrasonic cleaning for 30 minutes, then placing the substrate in alcohol with the ethanol mass percentage of 78% for ultrasonic cleaning for 15 minutes, after the ultrasonic cleaning is finished, performing alcohol steam drying on the substrate, and then performing plasma cleaning on the substrate for 5 minutes. The substrate is made of polyethylene terephthalate, the temperature of deionized water is 30 ℃, the ultrasonic frequency of the deionized water is 50kHZ, the ultrasonic power of the deionized water is 700W, the temperature of alcohol is 30 ℃, the ultrasonic frequency of the alcohol is 50kHZ, the ultrasonic power of the alcohol is 700W, and plasma is ozone.

(2) And (2) arranging 500nm of heat-conducting glue on one side of the substrate obtained in the step (1), placing the substrate on a clamp, positioning the heat-conducting glue between the substrate and the clamp, and then carrying out cold trap treatment on the substrate for 60 seconds by using a cold trap mechanism at the temperature of 150 ℃ below zero. After the cold trap treatment is finished, in a nitrogen atmosphere, performing magnetron sputtering on a barrier layer with the thickness of 30nm on one side, away from the heat-conducting glue, of the substrate subjected to the cold trap treatment by taking silicon as a target material, wherein the barrier layer is made of silicon nitride, the working pressure is 0.5Pa, the sputtering power is 300W, the flow of nitrogen is 800SCCM, the running speed is 1.5mL/min, the coating time is 60 seconds, and the temperature of the substrate is 80 ℃.

(3) And in the mixed gas atmosphere of oxygen and argon, indium oxide and tin oxide with the mass ratio of 9:1 are used as targets, and a 25nm first ITO layer is subjected to magnetron sputtering on the side, away from the substrate, of the barrier layer. Wherein the working pressure is 0.25Pa, the distance between the target and the side of the barrier layer far away from the substrate is 80 mm, the sputtering frequency is 3600W, the operating speed of the clamp is 1.5mL/min, the coating time is 60 seconds, the temperature of the substrate and the coated film layer is 80 ℃, the flow of oxygen is 800SCCM, and the flow of argon is 1400 SCCM.

(4) And in an argon gas atmosphere, performing magnetron sputtering on an 80nm reinforcing layer on one side of the first ITO layer, which is far away from the barrier layer, by taking silver as a target under the working pressure of 0.5Pa, wherein the sputtering power is 2000W. Wherein the operation speed of the clamp is 1.5mL/min, the coating time is 60 seconds, and the temperature of the substrate and the coated film layer is 80 ℃.

(5) In the mixed gas atmosphere of oxygen and argon, indium oxide and tin oxide with the mass ratio of 9:1 are used as targets, ultraviolet light with the wavelength of 200nm is used for irradiating one side of the enhancement layer far away from the first ITO layer, and the side of the enhancement layer far away from the first ITO layer is subjected to magnetic controlAnd sputtering a 25nm second ITO layer to obtain the conductive film. Wherein the working pressure is 0.25Pa, the distance between the target and the side of the enhancement layer far away from the first ITO layer is 80 mm, the sputtering frequency is 3600W, the operating speed of the clamp is 1.5mL/min, the coating time is 60 seconds, the temperature of the substrate and the coated film layer is 80 ℃, the flow of oxygen is 800SCCM, the flow of argon is 1400SCCM, the intensity of ultraviolet light is 300J/m²And the distance between the ultraviolet light source and the side of the enhancement layer far away from the first ITO layer is 50 cm.

Example 4

The preparation process of the conductive film of this example is as follows:

(1) and (3) placing the substrate in deionized water for ultrasonic cleaning for 25 minutes, then placing the substrate in alcohol with the alcohol content of 75% by mass for ultrasonic cleaning for 13 minutes, after the ultrasonic cleaning is finished, performing alcohol steam drying on the substrate, and then performing plasma cleaning on the substrate for 4 minutes. Wherein, the substrate is made of materials with the mass ratio of 5: 3: 2, the temperature of deionized water is 25 ℃, the ultrasonic frequency of the deionized water is 45kHZ, the ultrasonic power of the deionized water is 600W, the temperature of alcohol is 28 ℃, the ultrasonic frequency of the alcohol is 48kHZ, the ultrasonic power of the alcohol is 650W, and the plasma is ozone.

(2) Arranging 400nm of heat-conducting glue on one side of the substrate obtained in the step (1), placing the substrate on a clamp, positioning the heat-conducting glue between the substrate and the clamp, and then carrying out cold trap treatment on the substrate for 45 seconds by using a cold trap mechanism at the temperature of-140 ℃. After the cold trap treatment is finished, in an oxygen atmosphere, carrying out magnetron sputtering on a 28nm barrier layer on one side, away from the heat-conducting adhesive, of the substrate subjected to the cold trap treatment by using titanium dioxide as a target material, wherein the barrier layer is made of titanium dioxide, the working pressure is 0.35Pa, the sputtering power is 250W, the flow of oxygen is 700SCCM, the running speed is 1.3mL/min, the coating time is 50 seconds, and the temperature of the substrate is 80 ℃.

(3) And in the mixed gas atmosphere of oxygen and argon, indium oxide and tin oxide with the mass ratio of 9:1 are used as targets, and a first ITO layer with the thickness of 27nm is subjected to magnetron sputtering on the side, away from the substrate, of the barrier layer. The working pressure is 0.125Pa, the distance between the target and the side of the barrier layer far away from the substrate is 70 mm, the sputtering frequency is 3300W, the running speed of the clamp is 1.4mL/min, the coating time is 55 seconds, the temperature of the substrate and the coated film layer is 70 ℃, the flow of oxygen is 750SCCM, and the flow of argon is 1300 SCCM.

(4) And in an argon gas atmosphere, carrying out magnetron sputtering on a 75nm reinforcing layer on one side of the first ITO layer, which is far away from the barrier layer, by taking silver as a target under the working pressure of 0.4Pa, wherein the sputtering power is 1800W. Wherein the operation speed of the clamp is 1.4mL/min, the film coating time is 55 seconds, and the temperature of the substrate and the coated film layer is 70 ℃.

(5) And introducing ozone with the flow rate of 150SCCM to one side of the enhancement layer, which is far away from the first ITO layer, introducing argon with the flow rate of 1250SCCM to one side of the substrate, which is far away from the barrier layer, and performing magnetron sputtering on a 22nm second ITO layer on one side of the enhancement layer, which is far away from the first ITO layer, by taking indium oxide and tin oxide with the mass ratio of 8:2 as targets to obtain the conductive film. Wherein the working pressure is 0.125Pa, the distance between the target and the side of the enhancement layer far away from the first ITO layer is 60 mm, the sputtering frequency is 3300W, the operating speed of the clamp is 1.4mL/min, the coating time is 58 seconds, and the temperature of the substrate and the coated film layer is 70 ℃.

Example 5

The preparation process of the conductive film of this example is as follows:

(1) placing the substrate in deionized water for ultrasonic cleaning for 23 minutes, then placing the substrate in alcohol with the ethanol mass percentage of 72 percent for ultrasonic cleaning for 12 minutes, after the ultrasonic cleaning is finished, performing alcohol steam drying on the substrate, and then performing plasma cleaning on the substrate for 5 minutes. The substrate is made of polyethylene terephthalate, the temperature of deionized water is 25 ℃, the ultrasonic frequency of the deionized water is 45kHZ, the ultrasonic power of the deionized water is 620W, the temperature of alcohol is 30 ℃, the ultrasonic frequency of the alcohol is 48kHZ, the ultrasonic power of the alcohol is 660W, and plasma is ozone.

(2) And (2) arranging 280nm of heat-conducting glue on one side of the substrate obtained in the step (1), placing the substrate on a clamp, positioning the heat-conducting glue between the substrate and the clamp, carrying out cold trap treatment on the substrate for 30 seconds by using a cold trap mechanism at the temperature of-130 ℃. After cold trap treatment is finished, in a nitrogen and oxygen atmosphere, performing magnetron sputtering on a barrier layer with the thickness of 30nm on one side, away from the heat-conducting glue, of the substrate subjected to cold trap treatment by taking silicon as a target material, wherein the working pressure is 0.2Pa, the sputtering power is 300W, the flow of oxygen is 800SCCM, the flow of nitrogen is 600SCCM, the running speed is 1.5mL/min, the coating time is 60 seconds, the temperature of the substrate is 60 ℃, and the mass ratio of silicon nitride to silicon dioxide in the barrier layer is 1: 4.

(3) in the mixed gas atmosphere of oxygen and argon, indium oxide and tin oxide with the mass ratio of 8:2 are used as targets, a first ITO layer with the thickness of 23nm is subjected to magnetron sputtering on the side, away from the substrate, of the barrier layer, wherein the working pressure is 3.5 × 10^-3Pa, the distance between the target and the side of the barrier layer far away from the substrate is 70 mm, the sputtering frequency is 3000W, the operating speed of the clamp is 1.2mL/min, the coating time is 50 seconds, the temperature of the substrate and the coated film layer is 60 ℃, the flow of oxygen is 690SCCM, and the flow of argon is 1320 SCCM.

(4) And in an argon gas atmosphere, performing magnetron sputtering on a 75nm reinforcing layer on one side of the first ITO layer, which is far away from the barrier layer, by taking silver as a target under the working pressure of 0.3Pa, wherein the sputtering power is 1700W. Wherein the operation speed of the clamp is 1.5mL/min, the coating time is 60 seconds, and the temperature of the substrate and the coated film layer is 60 ℃.

(5) Introducing 130SCCM ozone to the side of the enhancement layer far away from the first ITO layer, introducing 1280SCCM argon to the side of the substrate far away from the barrier layer, and performing magnetron sputtering on a 22nm second ITO layer to obtain a conductive film on the side of the enhancement layer far away from the first ITO layer by using indium oxide and tin oxide with the mass ratio of 8:2 as targets, wherein the working pressure is 3.5 × 10^-3Pa, the distance between the target and the side of the enhancement layer far away from the first ITO layer is 80 mm, the sputtering frequency is 3000W, the running speed of the clamp is 1.2mL/min, the film coating time is 55 seconds, and the temperature of the substrate and the coated film layer is 60 ℃.

Example 6

The preparation process of the conductive film of this example is as follows:

(5) Introducing 130SCCM ozone to the side of the enhancement layer far away from the first ITO layer, introducing 1400SCCM argon to the side of the substrate far away from the barrier layer, and performing magnetron sputtering on a 25nm second ITO layer to obtain a conductive film on the side of the enhancement layer far away from the first ITO layer by taking indium oxide and tin oxide with the mass ratio of 8:2 as targets, wherein the working pressure is 3.5 × 10^-3Pa, target and reinforcementThe distance between the side of the layer far away from the first ITO layer is 80 mm, the sputtering frequency is 3000W, the running speed of the clamp is 1.5mL/min, the coating time is 60 seconds, and the temperature of the substrate and the coated film layer is 60 ℃.

Example 7

The preparation process of the conductive film of this example is as follows:

(2) Arranging 400nm of heat-conducting glue on one side of the substrate obtained in the step (1), placing the substrate on a clamp, positioning the heat-conducting glue between the substrate and the clamp, and then carrying out cold trap treatment on the substrate for 45 seconds by using a cold trap mechanism at the temperature of-140 ℃. After the cold trap treatment is finished, in an oxygen atmosphere, performing magnetron sputtering on a 28nm barrier layer on one side, away from the heat-conducting adhesive, of the substrate subjected to the cold trap treatment by using silicon as a target material, wherein the barrier layer is made of titanium dioxide, the working pressure is 0.35Pa, the sputtering power is 250W, the flow of oxygen is 700SCCM, the running speed is 1.3mL/min, the coating time is 50 seconds, and the temperature of the substrate is 80 ℃.

(3) Ozone with the flow rate of 200SCCM is introduced to the side, far away from the first ITO layer, of the enhancement layer, argon with the flow rate of 1300SCCM is introduced to the side, far away from the barrier layer, of the substrate, and the first ITO layer with the flow rate of 27nm is subjected to magnetron sputtering on the side, far away from the substrate, of the barrier layer by taking indium oxide and tin oxide with the mass ratio of 8:2 as targets. Wherein the working pressure is 0.125Pa, the distance between the target and the side of the barrier layer far away from the substrate is 70 mm, the sputtering frequency is 3300W, the running speed of the clamp is 1.4mL/min, the film coating time is 55 seconds, and the temperature of the substrate and the coated film layer is 70 ℃.

(5) And introducing ozone with the flow rate of 150SCCM to one side of the enhancement layer, which is far away from the first ITO layer, introducing argon with the flow rate of 1250SCCM to one side of the substrate, which is far away from the barrier layer, and performing magnetron sputtering on a 22nm second ITO layer to one side of the enhancement layer, which is far away from the first ITO layer to obtain the conductive film. Wherein the working pressure is 0.125Pa, the distance between the target and the side of the enhancement layer far away from the first ITO layer is 60 mm, the sputtering frequency is 3300W, the operating speed of the clamp is 1.4mL/min, the coating time is 58 seconds, and the temperature of the substrate and the coated film layer is 70 ℃.

Example 8

The preparation process of the conductive film of this example is as follows:

(2) And (3) carrying out cold trap treatment on the substrate obtained in the step (1) for 60 seconds by using a cold trap mechanism at the temperature of-130 ℃. After the cold trap treatment is finished, in an oxygen atmosphere, performing magnetron sputtering on a 20nm barrier layer on one side of the substrate subjected to the cold trap treatment by taking silicon dioxide as a target, wherein the barrier layer is made of silicon dioxide, the working pressure is 0.2Pa, the sputtering power is 200W, the flow of oxygen is 600SCCM, the running rate is 1mL/min, and the coating time is 40 seconds.

(3) And in the mixed gas atmosphere of oxygen and argon, indium oxide and tin oxide with the mass ratio of 8:2 are used as targets, and a first ITO layer with the thickness of 20nm is subjected to magnetron sputtering on the side, away from the substrate, of the barrier layer. Wherein the working pressure is3.5×10^-3Pa, the distance between the target and the side of the barrier layer far away from the substrate is 80 mm, the sputtering frequency is 3000W, the operating speed of the clamp is 1.2mL/min, the coating time is 50 seconds, the temperature of the substrate and the coated film layer is 60 ℃, the flow of oxygen is 600SCCM, and the flow of argon is 1000 SCCM.

(4) And in an argon gas atmosphere, performing magnetron sputtering on a 70nm reinforcing layer on one side of the first ITO layer, which is far away from the barrier layer, by taking silver as a target under the working pressure of 0.3Pa, wherein the sputtering power is 1000W. Wherein the operation speed of the clamp is 1.0mL/min, the coating time is 40 seconds, and the temperature of the substrate and the coated film layer is 80 ℃.

Example 9

The preparation process of the conductive film of this example is as follows:

(2) And (2) arranging 320nm of heat-conducting glue on one side of the substrate obtained in the step (1), placing the substrate on a clamp, positioning the heat-conducting glue between the substrate and the clamp, and then carrying out cold trap treatment on the substrate for 30 seconds by using a cold trap mechanism at the temperature of 150 ℃ below zero. After the cold trap treatment is finished, a 22nm first ITO layer is subjected to magnetron sputtering on one side of the substrate by taking indium oxide and tin oxide with the mass ratio of 9:1 as targets in a mixed gas atmosphere of oxygen and argon. Wherein the working pressure is 0.25Pa, the distance between the target and the side of the barrier layer far away from the substrate is 80 mm, the sputtering frequency is 3600W, the operating speed of the clamp is 1.3mL/min, the coating time is 45 seconds, the temperature of the substrate and the coated film layer is 80 ℃, the flow of oxygen is 660SCCM, and the flow of argon is 1200 SCCM.

(3) In an argon gas atmosphere, a silver target is used for carrying out magnetron sputtering on a 70nm enhancement layer on one side of the first ITO layer, which is far away from the substrate, under the working pressure of 0.5Pa, and the sputtering power is 1200W. Wherein the operation speed of the clamp is 1.3mL/min, the coating time is 50 seconds, and the temperature of the substrate and the coated film layer is 60 ℃.

(4) In the mixed gas atmosphere of oxygen and argon, indium oxide and tin oxide with the mass ratio of 8:2 are used as targets, ultraviolet light with the wavelength of 260nm is used for irradiating one side, far away from the first ITO layer, of the enhancement layer, a second ITO layer with the wavelength of 25nm is subjected to magnetron sputtering on one side, far away from the first ITO layer, of the enhancement layer, and the conductive film is obtained, wherein the working pressure is 3.5 × 10^-3Pa, the distance between the target and the side of the enhancement layer far away from the first ITO layer is 80 mm, the sputtering frequency is 3000W, the operating speed of the clamp is 1.5mL/min, the coating time is 60 seconds, the temperature of the substrate and the coated film layer is 60 ℃, the flow of oxygen is 800SCCM, the flow of argon is 1400SCCM, and the intensity of ultraviolet light is 400J/m²And the distance between the ultraviolet light source and the side of the enhancement layer far away from the first ITO layer is 80 cm.

Example 10

The preparation process of the conductive film of this example is as follows:

(4) In the mixed gas atmosphere of oxygen and argon, indium oxide and tin oxide in a mass ratio of 9:1 are used as targets, ultraviolet light with the wavelength of 200nm is used for irradiating one side, far away from the first ITO layer, of the enhancement layer, and a second ITO layer with the wavelength of 25nm is subjected to magnetron sputtering on one side, far away from the first ITO layer, of the enhancement layer, so that the conductive film is obtained. Wherein the working pressure is 0.25Pa, the distance between the target and the side of the enhancement layer far away from the first ITO layer is 80 mm, the sputtering frequency is 3600W, the operating speed of the clamp is 1.5mL/min, the coating time is 60 seconds, the temperature of the substrate and the coated film layer is 80 ℃, the flow of oxygen is 800SCCM, the flow of argon is 1400SCCM, the intensity of ultraviolet light is 300J/m²And the distance between the ultraviolet light source and the side of the enhancement layer far away from the first ITO layer is 50 cm.

Example 11

The preparation process of the conductive film of this example is as follows:

(4) And in an argon gas atmosphere, performing magnetron sputtering on a 75nm reinforcing layer on one side of the first ITO layer, which is far away from the barrier layer, by taking silver as a target under the working pressure of 0.4Pa to obtain the conductive film. Wherein the sputtering power is 1800W, the operating speed of the clamp is 1.4mL/min, the film coating time is 55 seconds, and the temperature of the substrate and the coated film layer is 70 ℃.

Example 12

The preparation process of the conductive film of this example is as follows:

(3) in the mixed gas atmosphere of oxygen and argon, indium oxide and tin oxide with the mass ratio of 8:2 are used as targets, a first ITO layer with the thickness of 23nm is subjected to magnetron sputtering on the side, away from the substrate, of the silicon dioxide layer, wherein the working pressure is 3.5 × 10^-3Pa, the distance between the target and the side of the barrier layer far away from the substrate is 70 mm, the sputtering frequency is 3000W, the operating speed of the clamp is 1.2mL/min, the coating time is 50 seconds, the temperature of the substrate and the coated film layer is 60 ℃, the flow of oxygen is 690SCCM, and the flow of argon is 1320 SCCM.

(5) In a mixture of oxygen and argonIn a bulk atmosphere, indium oxide and tin oxide with a mass ratio of 8:2 are used as targets, a second ITO layer with the thickness of 23nm is subjected to magnetron sputtering on one side of the enhancement layer far away from the first ITO layer, and a conductive film is obtained, wherein the working pressure is 3.5 × 10^-3Pa, the distance between the target and the side of the barrier layer far away from the substrate is 80 mm, the sputtering frequency is 3000W, the operating speed of the clamp is 1.2mL/min, the coating time is 55 seconds, the temperature of the substrate and the coated film layer is 60 ℃, the flow of oxygen is 780SCCM, and the flow of argon is 1280 SCCM.

Example 13

The preparation process of the conductive film of this example is as follows:

(2) Arranging 320nm of heat-conducting glue on one side of the substrate obtained in the step (1), placing the substrate on a clamp, positioning the heat-conducting glue between the substrate and the clamp, then carrying out cold trap treatment on the substrate for 30 seconds by using a cold trap mechanism at the temperature of-150 ℃, after the cold trap treatment is finished, carrying out magnetron sputtering on a 25nm ITO layer on one side of the substrate far away from the heat-conducting glue in an atmosphere of mixed gas of oxygen and argon by using indium oxide and tin oxide with the mass ratio of 8:2 as targets and irradiating the side of the substrate far away from the heat-conducting glue by using ultraviolet light with the wavelength of 260nm to obtain a conductive film, wherein the working pressure is 3.5 × 10^-3Pa, the distance between the target and the side of the substrate far away from the heat-conducting adhesive is 80 mm, the sputtering frequency is 3000W, the operating speed of the clamp is 1.5mL/min, the coating time is 60 seconds, the temperature of the substrate and the coated film layer is 60 ℃, the flow of oxygen is 800SCCM, the flow of argon is 1400SCCM, and the intensity of ultraviolet light is 400J/m²And the distance between the ultraviolet light source and the side of the substrate far away from the heat-conducting glue is 80 cm.

Example 14

The preparation process of the conductive film of this example is as follows:

(3) And introducing ozone with the flow rate of 150SCCM to one side of the enhancement layer, which is far away from the first ITO layer, introducing argon with the flow rate of 1250SCCM to one side of the substrate, which is far away from the barrier layer, and performing magnetron sputtering on the ITO layer with the thickness of 22nm on one side of the barrier layer, which is far away from the substrate, by taking indium oxide and tin oxide with the mass ratio of 8:2 as targets to obtain the conductive film. Wherein the working pressure is 0.125Pa, the distance between the target and the side of the silicon dioxide far away from the substrate is 60 mm, the sputtering frequency is 3300W, the running speed of the clamp is 1.4mL/min, the coating time is 58 seconds, and the temperature of the substrate and the coated film layer is 70 ℃.

Example 15

The preparation process of the conductive film of this example is as follows:

(2) And (2) arranging 300nm of heat-conducting glue on one side of the substrate obtained in the step (1), and placing the substrate on a clamp, wherein the heat-conducting glue is positioned between the substrate and the clamp. In an oxygen atmosphere, a 20nm barrier layer is formed by magnetron sputtering on one side, away from the heat-conducting adhesive, of the substrate subjected to cold trap treatment by taking silicon dioxide as a target material, the barrier layer is made of silicon dioxide, the working pressure is 0.2Pa, the sputtering power is 200W, the flow of oxygen is 600SCCM, the running rate is 1mL/min, the coating time is 40 seconds, and the temperature of the substrate is 60 ℃.

(3) In the mixed gas atmosphere of oxygen and argon, indium oxide and tin oxide with the mass ratio of 8:2 are used as targets, a first ITO layer with the thickness of 20nm is subjected to magnetron sputtering on the side, away from the substrate, of the barrier layer, wherein the working pressure is 3.5 × 10^-3Pa, the distance between the target and the side of the barrier layer far away from the substrate is 80 mm, the sputtering frequency is 3000W, the operating speed of the clamp is 1.2mL/min, the coating time is 50 seconds, the temperature of the substrate and the coated film layer is 60 ℃, the flow of oxygen is 600SCCM, and the flow of argon is 1000 SCCM.

And (3) testing:

the resistivity, the visible light transmittance and the surface work function of the conductive films of examples 1 to 15 were respectively measured, and the results are shown in table 1. The resistivity of the conductive films of examples 1 to 15 was measured by a four-probe square-needle tester, the visible light transmittance of the conductive films of examples 1 to 15 was measured by a spectrophotometer, and the surface work function of the conductive films of examples 1 to 15 was measured by a contact potential difference method.

TABLE 1 resistivity, visible light transmittance, and surface work function of the conductive films of examples 1-15

As can be seen from Table 1, the resistivity of the conductive films of examples 1 to 5 was less than 6.0 × 10^-4Omega cm, visible light transmittance of more than 88 percent and surface work function of more than 5.3eV, and can meet the requirements of conductive films and electronic devices.

The visible light transmittance of the conductive film in example 1 is equivalent to the visible light transmittance of the conductive film in example 8, while the resistivity of the conductive film in example 1 is lower than that of the conductive film in example 8, and the work function of the conductive film in example 1 is greater than that of the conductive film in example 8, which indicates that the thermal conductive adhesive provided in example 1 can promote the heat dissipation of the substrate, thereby facilitating the reduction of the resistivity of the conductive film and the improvement of the work function of the conductive film.

The visible transmittance of the conductive film of example 2 is equivalent to the visible transmittance of the conductive film of example 9, while the resistivity of the conductive film of example 2 is lower than that of the conductive film of example 9, and the work function of the conductive film of example 2 is greater than that of the conductive film of example 9, which shows that the provision of the barrier layer can effectively prevent contamination of the first ITO layer by organic lysate generated by cracking, outgassing, etc. of the substrate.

The visible light transmittance of the conductive film of example 3 is equivalent to the visible light transmittance of the conductive film of example 10, while the resistivity of the conductive film of example 3 is lower than that of the conductive film of example 10, and the work function of the conductive film of example 3 is greater than that of the conductive film of example 10, which shows that the arrangement of the reinforcing layer can reduce the resistivity of the conductive film, improve the carrier mobility of the film layer, and ensure the optical performance of the conductive film.

The visible transmittance of the conductive film of example 4 is equivalent to the visible light transmittance of the conductive film of example 11, while the resistivity of the conductive film of example 4 is lower than that of the conductive film of example 11, and the work function of the conductive film of example 4 is greater than that of the conductive film of example 11, which shows that the provision of the second ITO layer can lower the resistivity of the conductive film and increase the work function of the conductive film.

The visible light transmittance of the conductive film of example 5 is equivalent to the visible light transmittance of the conductive film of example 12, while the resistivity of the conductive film of example 5 is lower than that of the conductive film of example 12, and the work function of the conductive film of example 5 is greater than that of the conductive film of example 12, which shows that by plating the second ITO layer in the presence of ozone, it is possible to realize plating the second ITO layer at a low temperature, prevent the substrate from being deformed at a high temperature, and at the same time, the highly active ozone can oxidize indium more easily to produce indium oxide, enhance the visible light transmittance of the conductive film, and reduce the resistivity of the conductive film.

In conclusion, the conductive film obtained by the preparation method has high visible light transmittance and low resistivity, and can meet the actual requirements. In addition, the total thickness of the film layer of the conductive film obtained by the preparation method is 130 nm-160 nm, so that the electronic device containing the conductive film is lighter and thinner.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims

1. The preparation method of the conductive film is characterized by comprising the following steps of:

plating a barrier layer with the thickness of 20 nm-30 nm on a substrate, wherein the material of the barrier layer is at least one of silicon nitride and titanium dioxide;

plating an enhancement layer with the thickness of 70 nm-80 nm on one side of the first ITO layer, which is far away from the barrier layer, wherein the enhancement layer is made of graphene; and

argon is used as working gas, in the presence of ozone, and the volume ratio of the ozone to the argon is 1: 8-2: 9, plating a second ITO layer with the thickness of 20 nm-25 nm on one side of the enhancement layer, which is far away from the first ITO layer, so as to obtain a conductive film;

wherein the step of plating a barrier layer with a thickness of 20nm to 30nm on the substrate comprises: and arranging a heat conduction layer on one side of the substrate, and then arranging the barrier layer on one side of the substrate far away from the heat conduction layer.

2. The method according to claim 1, wherein the substrate is made of at least one material selected from the group consisting of polyimide, polycarbonate, and polyethylene terephthalate.

3. The method according to claim 1, wherein the step of plating the barrier layer with a thickness of 20nm to 30nm on the substrate is preceded by a step of performing cold trap treatment on the substrate.

4. The method according to claim 1, further comprising plasma cleaning the substrate before the step of plating the barrier layer with a thickness of 20nm to 30nm on the substrate, wherein the plasma is ozone plasma.

5. The method according to claim 1, wherein the step of coating the barrier layer with a thickness of 20nm to 30nm on the substrate is performed by magnetron sputtering at an operating pressure of 0.2Pa to 0.5Pa and a sputtering power of 200W to 300W.

6. The preparation method according to claim 1, wherein in the operation of plating the first ITO layer with the thickness of 20nm to 25nm on the side of the barrier layer away from the substrate, the plating mode is magnetron sputtering, the target material is indium oxide and tin oxide with the mass ratio of 8:2 to 9:1, and the working pressure is 3.5 × 10^-3Pa-0.25 Pa, wherein the gas atmosphere is a mixed gas of oxygen and argon, and the volume ratio of the argon to the oxygen is 5: 3-7: 4; and

7. The preparation method according to claim 1, wherein the step of plating the enhancement layer with the thickness of 70nm to 80nm on the side of the first ITO layer away from the barrier layer specifically comprises the following steps: and in an inert gas atmosphere, performing magnetron sputtering on the enhancement layer on one side of the first ITO layer, which is far away from the barrier layer, by taking graphene as a target under the working pressure of 0.3-0.5 Pa, wherein the sputtering power is 1000-2000W.

8. The preparation method according to claim 1, wherein the argon gas is used as a working gas, ozone exists, and the volume ratio of the ozone to the argon gas is 1: 8-2: 9 is obtained by the following operations:

ozone with the flow of 100-200 SCCM is introduced into one side of the enhancement layer, which is far away from the first ITO layer, and argon with the flow of 1000-1400 SCCM is introduced into one side of the substrate, which is far away from the barrier layer; or the like, or, alternatively,

9. A plating apparatus, characterized by comprising:

the first film coating mechanism can coat a film layer made of silicon nitride;

the second film coating mechanism can coat an ITO film;

the third film coating mechanism can coat a film layer made of graphene; and

a fourth film plating mechanism capable of plating an ITO film in a mixed gas atmosphere of ozone and argon;

the coating equipment can be used for preparing the conductive film prepared by the preparation method of any one of claims 1 to 8.

10. A conductive film produced by the production method according to any one of claims 1 to 8.

11. An electronic device comprising an anode, wherein the anode comprises the conductive film according to claim 10.