CN108218194A - Semiconductor photovoltaic automatically controls charging production method and equipment with quartz ampoule - Google Patents
Semiconductor photovoltaic automatically controls charging production method and equipment with quartz ampoule Download PDFInfo
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- CN108218194A CN108218194A CN201810140417.6A CN201810140417A CN108218194A CN 108218194 A CN108218194 A CN 108218194A CN 201810140417 A CN201810140417 A CN 201810140417A CN 108218194 A CN108218194 A CN 108218194A
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- Prior art keywords
- quartz ampoule
- quartz
- semiconductor photovoltaic
- automatically controls
- sand
- Prior art date
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 175
- 239000010453 quartz Substances 0.000 title claims abstract description 84
- 239000003708 ampul Substances 0.000 title claims abstract description 79
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000006004 Quartz sand Substances 0.000 claims abstract description 52
- 239000007788 liquid Substances 0.000 claims abstract description 45
- 238000012544 monitoring process Methods 0.000 claims abstract description 22
- 238000005660 chlorination reaction Methods 0.000 claims abstract description 16
- 238000000746 purification Methods 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 31
- 239000002002 slurry Substances 0.000 claims description 30
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 20
- 239000004576 sand Substances 0.000 claims description 20
- 238000004441 surface measurement Methods 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 14
- 229910021641 deionized water Inorganic materials 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 5
- 239000000908 ammonium hydroxide Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 230000018044 dehydration Effects 0.000 claims description 3
- 238000006297 dehydration reaction Methods 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- 101100041681 Takifugu rubripes sand gene Proteins 0.000 claims 6
- 238000012797 qualification Methods 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 description 5
- 239000005350 fused silica glass Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B3/00—Charging the melting furnaces
Abstract
Charging production method and equipment are automatically controlled with quartz ampoule the invention discloses a kind of semiconductor photovoltaic, belongs to production of quartz tubes technical field.The problem of quartz ampoule translucency for solving prior art production is poor, and qualification rate is low.It includes the following steps：(1) quartz sand is carried out physical purification, chemical purification and chlorination to handle；(2) quartz sand after purification is added to semiconductor photovoltaic to be automatically controlled in charging production equipment with quartz ampoule, produces semiconductor photovoltaic quartz ampoule.Its production equipment includes bell, furnace body and crucible, heating and heat-insulating device is equipped between furnace body and crucible, set on the bell there are two and above charge door, charge door is connected with auto feed control system, detecting liquid level system is additionally provided on bell, quartz ampoule exit below furnace body is equipped with yield monitoring instrument, and the detecting liquid level system and yield monitoring instrument are connected respectively with auto feed control system.The present invention can be used for production semiconductor photovoltaic quartz ampoule.
Description
Technical field
Charging production method and equipment are automatically controlled with quartz ampoule the present invention relates to a kind of semiconductor photovoltaic, belongs to quartz ampoule
Production technical field.
Background technology
Quartz glass tube is the special industrial technical glass manufactured with silica, has high temperature resistant, corrosion-resistant, thermostabilization
The a series of excellent physical and chemical performances such as property is good, light transmission is good, electrical insulating property is good, therefore quartz ampoule is widely used
In every field such as electric light source, semiconductor, optic communication, military project, metallurgy, building materials, chemistry, machinery, electric power, environmental protection.
Semiconductor photovoltaic quartz ampoule is higher to the quality requirement of pipe, it is desirable that quartz ampoule even tube wall degree is high, bubble-free gas
Line, no colo(u)r streak is particularly stringent to light transmission requirement, generally requires quartz ampoule light transmittance more than 92%, and existing quartz is even
In molten pipe drawing device, generally quartz sand is controlled to fall with the angle of repose of quartz sand, clearance-type falls, it is difficult to ensure that fused quartz melt
Liquid level it is steady, caused stress at liquid level it is uneven, and be unfavorable for bubble discharge.Charging process easily forms material heap knot lid,
Cause continuous induction melting furnace quartz sand feed distribution uneven, sand grains accumulation excessively easily makes gas be wrapped up by quartzy melt, formation gas line,
Bubble, quartzy levels pressure is uneven in stove, and the molding of coming out of the stove of quartz material is affected, and causes the inclined wall of quartz ampoule, gas line excessive.Therefore
The semiconductor photovoltaic quartz ampoule of existing equipment production, translucency is poor, rejection rate is higher, of high cost.
Invention content
It is an object of the invention to the above problem is overcome to provide a kind of semiconductor photovoltaic to automatically control charging life with quartz ampoule
Production method is greatly improved the qualification rate of semiconductor photovoltaic quartz ampoule.
Also provide a kind of semiconductor photovoltaic automatically controls charging production equipment to the present invention with quartz ampoule simultaneously.
The semiconductor photovoltaic automatically controls charging production method with quartz ampoule, includes the following steps：
(1) quartz sand purifying is handled：
Quartz sand after physical purification, chemical purification is subjected to chlorination processing, it is spare to obtain glass sand；
(2) quartz ampoule draws molding：
By glass sand be added to semiconductor photovoltaic with quartz ampoule automatically control charging production equipment charge door in,
It is flowed into inside crucible by multijaw feed opening, charge door is connected with auto feed control system, and auto feed control system is divided into not
It is connected with detecting liquid level system and laser material surface measurement system and yield monitoring instrument, is changed by measuring liquid level and charge level respectively
And quartz ampoule yield feeds back to auto feed control system, automatically controls the feeding quantity of charge door, glass sand is through molten
By quartz ampoule outlet outflow to get to semiconductor photovoltaic quartz ampoule after melting.
Further speaking, the physical purification step is：The quartz sand that D50 values are 150 μm is taken after quartz sand is crushed
Particle, quartz sand and deionized water are according to 1 after washing desliming:The mass ratio of 1.2-1.5 is made into slurry.
Further speaking, the chemical purification step is：The sulfuric acid that mass fraction is 15-22% is added in into slurry,
After stirring is impregnated 2-3 hour, material is sent to being dehydrated in filter press, wherein the volume ratio of sulfuric acid and slurry is 1:0.8-
1.2；Quartz sand and deionized water are according to 1 after being dehydrated again:The mass ratio of 1.8-2.2 is made into slurry, and slurry is adjusted with ammonium hydroxide
To neutrality, the EDTA of quartz sand quality 0.3-0.8% is then added in into slurry, is dehydrated after being stirred 1-2 hours, spend from
Sub- water is rinsed to neutrality and is dried.
Further speaking, the chlorination processing step is：The quartz sand of drying is put into temperature as 1100-1200 DEG C of chlorination
Stove carries out obtaining glass sand after chlorination is handled 10-15 minutes.
Further speaking, the content of silica is more than 99.998% in the glass sand.
The semiconductor photovoltaic automatically controls charging production equipment with quartz ampoule, including bell, furnace body and is arranged on
The crucible of furnace interior, is equipped with heating and heat-insulating device between furnace body and crucible, set on the bell there are two and above charging
Mouthful, charge door is connected with auto feed control system, is additionally provided with detecting liquid level system on bell, and the quartz ampoule below furnace body exports
Place is equipped with yield monitoring instrument, and the detecting liquid level system and yield monitoring instrument are connected respectively with auto feed control system.
Further speaking, be additionally provided with laser material surface measurement system inside the bell, the laser material surface measurement system with
Auto feed control system is connected.
Further speaking, the charge door is connected with multijaw feed opening.
Further speaking, the multijaw feed opening includes 2-12 pawl.
Further speaking, detecting liquid level system includes two and above detecting liquid level needle.
Compared with prior art, the beneficial effects of the invention are as follows：
Quartz sand is carried out chlorination processing, the high-purity finally obtained by the method for the present invention after physical purification, chemical purification
The content of silica is more than 99.998% in quartz sand, and the quartz sand of high-purity is semiconductor photovoltaic quartz ampoule translucency
Ensure.
The semiconductor photovoltaic automatically controls charging production equipment with quartz ampoule and is equipped with auto feed control system, from
Dynamic Loading Control System is divided into not to be connected with detecting liquid level system and laser material surface measurement system and yield monitoring instrument, and yield is surveyed
The yield that instrument measures semiconductor photovoltaic quartz ampoule is measured, auto feed control system is fed back to, automatically controls the charging of charge door
Amount, ensures that production process is smoothed out.Detecting liquid level system can monitor fluid change, avoid fused quartz melt liquid liquid level in crucible
Pressure is uneven, and the molding of coming out of the stove of quartz material is affected, and causes the inclined wall of quartz ampoule, gas line excessive；Laser material surface measurement system monitoring
Charge level changes, and charging process is avoided to form material heap knot lid, causes continuous induction melting furnace quartz sand feed distribution uneven, while avoid sand grains
Accumulation excessively causes gas to be wrapped up by fused quartz melt liquid, forms gas line, bubble；Detecting liquid level system and laser material surface measurement system
Auto feed control system is finely adjusted according to liquid level and charge level situation of change respectively, detecting liquid level system, laser charge level are surveyed
Amount system and yield monitoring instrument three cooperation not only increase semiconductor photovoltaic quartz ampoule qualification rate, also substantially increase half
The light transmittance of conductor photovoltaic quartz ampoule.Semiconductor photovoltaic produced by the invention can reach 97% with quartz ampoule visible light transmittance
More than.
Description of the drawings
Fig. 1 is the structure diagram that semiconductor photovoltaic of the present invention automatically controls charging production equipment with quartz ampoule；
Wherein, 1, core bar；2nd, charge door；3rd, auto feed control system；4th, laser material surface measurement system；5th, detecting liquid level
System；6th, multijaw feed opening；7th, crucible；8th, heating and heat-insulating device；9th, furnace body；10th, quartz ampoule exports；11st, yield monitoring instrument；
12nd, bell；13rd, air inlet；14th, gas outlet.
Specific embodiment
With reference to specific embodiment, the present invention will be further described.
Embodiment 1
The semiconductor photovoltaic automatically controls charging production method with quartz ampoule, includes the following steps：
(1) quartz sand purifying is handled：
The quartz sand particle that D50 values are 150 μm is taken after quartz sand is crushed, quartz sand and deionized water are pressed after washing desliming
According to 1:1.2 mass ratio is made into slurry.
The sulfuric acid that mass fraction is 15% is added in into slurry, after stirring is impregnated 2 hours, by material send in filter press into
Row dehydration, the wherein volume ratio of sulfuric acid and slurry are 1:0.8；Quartz sand and deionized water are according to 1 after being dehydrated again:1.8
Mass ratio is made into slurry, adjusts slurry to neutrality with ammonium hydroxide, the EDTA of quartz sand quality 0.3% is then added in into slurry, is stirred
It is dehydrated after mixing mixing 1 hour, is rinsed to neutrality and dried with deionized water.
The quartz sand of drying is put into temperature and obtains high-purity after ten minutes for 1100 DEG C of chlorination furnaces progress chlorination processing
Quartz sand.
The content 99.998% of silica in the glass sand.
(2) quartz ampoule draws molding：
By glass sand be added to semiconductor photovoltaic with quartz ampoule automatically control charging production equipment charge door 2
In, it is flowed into inside crucible 7 by multijaw feed opening 6, charge door 2 is connected with auto feed control system 3, auto feed control system
3 are divided into and are not connected with detecting liquid level system 5 and laser material surface measurement system 4 and yield monitoring instrument 11, by measuring liquid respectively
Face and charge level variation and quartz ampoule yield feed back to auto feed control system 3, automatically control the feeding quantity of charge door 2, high
Purity quartz sand is after melting by 10 outflow of quartz ampoule outlet to get to semiconductor photovoltaic quartz ampoule.
Embodiment 2
The semiconductor photovoltaic automatically controls charging production method with quartz ampoule, includes the following steps：
(1) quartz sand purifying is handled：
The quartz sand particle that D50 values are 150 μm is taken after quartz sand is crushed, quartz sand and deionized water are pressed after washing desliming
According to 1:1.5 mass ratio is made into slurry.
The sulfuric acid that mass fraction is 22% is added in into slurry, after stirring is impregnated 3 hours, by material send in filter press into
Row dehydration, the wherein volume ratio of sulfuric acid and slurry are 1:1.2；Quartz sand and deionized water are according to 1 after being dehydrated again:2.2
Mass ratio is made into slurry, adjusts slurry to neutrality with ammonium hydroxide, the EDTA of quartz sand quality 0.8% is then added in into slurry, is stirred
It is dehydrated after mixing mixing 2 hours, is rinsed to neutrality and dried with deionized water.
The quartz sand of drying is put into after temperature carries out chlorination processing 15 minutes for 1200 DEG C of chlorination furnaces and obtains high-purity
Quartz sand.
The content 99.999% of silica in the glass sand.
(2) quartz ampoule draws molding：
By glass sand be added to semiconductor photovoltaic with quartz ampoule automatically control charging production equipment charge door 2
In, it is flowed into inside crucible 7 by multijaw feed opening 6, charge door 2 is connected with auto feed control system 3, auto feed control system
3 are divided into and are not connected with detecting liquid level system 5 and laser material surface measurement system 4 and yield monitoring instrument 11, by measuring liquid respectively
Face and charge level variation and quartz ampoule yield feed back to auto feed control system 3, automatically control the feeding quantity of charge door 2, high
Purity quartz sand is after melting by 10 outflow of quartz ampoule outlet to get to semiconductor photovoltaic quartz ampoule.
Embodiment 3
The semiconductor photovoltaic automatically controls charging production method with quartz ampoule, includes the following steps：
(1) quartz sand purifying is handled：
The quartz sand particle that D50 values are 150 μm is taken after quartz sand is crushed, quartz sand and deionized water are pressed after washing desliming
According to 1:1.3 mass ratio is made into slurry.
The sulfuric acid that mass fraction is 18% is added in into slurry, after stirring is impregnated 2.5 hours, material is sent to filter press
It is dehydrated, wherein the volume ratio of sulfuric acid and slurry is 1:1；Quartz sand and deionized water are according to 1 after being dehydrated again:2 matter
Amount ratio is made into slurry, adjusts slurry to neutrality with ammonium hydroxide, the EDTA of quartz sand quality 0.5%, stirring are then added in into slurry
Mixing is dehydrated after 1.5 hours, is rinsed to neutrality and is dried with deionized water.
The quartz sand of drying is put into after temperature carries out chlorination processing 12 minutes for 1150 DEG C of chlorination furnaces and obtains high-purity
Quartz sand.
The content of silica is more than 99.999% in the glass sand.
(2) quartz ampoule draws molding：
Glass sand is added to semiconductor photovoltaic to be automatically controlled in charging production equipment charge door 2 with quartz ampoule,
It is flowed into inside crucible 7 by multijaw feed opening 6, charge door 2 is connected with auto feed control system 3, and auto feed control system 3 is again
Be connected respectively with detecting liquid level system 5 and laser material surface measurement system 4 and yield monitoring instrument 11, by measure respectively liquid level and
Charge level changes and quartz ampoule yield feeds back to auto feed control system 3, automatically controls the feeding quantity of charge door 2, high-purity
Quartz sand is after melting by 10 outflow of quartz ampoule outlet to get to semiconductor photovoltaic quartz ampoule.
Embodiment 4
The semiconductor photovoltaic automatically controls charging production equipment with quartz ampoule, including bell 12, furnace body 9 and setting
Crucible 7 inside furnace body 9, is equipped with heating and heat-insulating device 8 between furnace body 9 and crucible 7, set on the bell 12 there are two and with
On charge door 2, charge door 2 is connected with auto feed control system 3, and detecting liquid level system 5, furnace body 9 are additionally provided on bell 12
Be equipped with yield monitoring instrument 11 at the quartz ampoule outlet 10 of lower section, the detecting liquid level system 5 and yield monitoring instrument 11 respectively with
Auto feed control system 3 is connected.
Embodiment 5
The semiconductor photovoltaic automatically controls charging production equipment with quartz ampoule, including bell 12, furnace body 9 and setting
Crucible 7 inside furnace body 9, is equipped with heating and heat-insulating device 8 between furnace body 9 and crucible 7, set on the bell 12 there are two and with
On charge door 2, charge door 2 is connected with auto feed control system 3, and detecting liquid level system 5, furnace body 9 are additionally provided on bell 12
Be equipped with yield monitoring instrument 11 at the quartz ampoule outlet 10 of lower section, the detecting liquid level system 5 and yield monitoring instrument 11 respectively with
Auto feed control system 3 is connected.Laser material surface measurement system 4, the laser material surface measurement are additionally provided with inside the bell 12
System 4 is connected with auto feed control system 3.
Embodiment 6
The semiconductor photovoltaic automatically controls charging production equipment with quartz ampoule, including bell 12, furnace body 9 and setting
Crucible 7 inside furnace body 9, is equipped with heating and heat-insulating device 8 between furnace body 9 and crucible 7, set on the bell 12 there are two and with
On charge door 2, charge door 2 is connected with auto feed control system 3, and detecting liquid level system 5, furnace body 9 are additionally provided on bell 12
Be equipped with yield monitoring instrument 11 at the quartz ampoule outlet 10 of lower section, the detecting liquid level system 5 and yield monitoring instrument 11 respectively with
Auto feed control system 3 is connected.Laser material surface measurement system 4, the laser material surface measurement are additionally provided with inside the bell 12
System 4 is connected with auto feed control system 3, and the charge door 2 is connected with multijaw feed opening 6, and the multijaw feed opening 6 wraps
Containing 2-12 pawl, detecting liquid level system 5 includes two and above detecting liquid level needle.
Semiconductor photovoltaic of the present invention automatically controls charging production equipment in use, first by furnace body 9 with quartz ampoule
On air inlet 13 and gas outlet 14 protective gas is passed through into crucible 7, then yield monitoring instrument 11 measure semiconductor photovoltaic use
The yield of quartz ampoule feeds back to auto feed control system 3, automatically controls the feeding quantity of charge door 2, ensures that production process is smooth
It carries out.Detecting liquid level system 5 can monitor fluid change, avoid fused quartz melt liquid levels pressure unevenness in crucible 7, influence quartz
Expect molding of coming out of the stove, cause the inclined wall of quartz ampoule, gas line excessive；Laser material surface measurement system 4 monitors charge level variation, avoids charging process
Material heap knot lid is formed, causes continuous induction melting furnace quartz sand feed distribution uneven, while sand grains accumulation is avoided excessively to lead to gas by stone
English molten liquid wraps up, and forms gas line, bubble；Detecting liquid level system 5 and laser material surface measurement system 4 are respectively according to liquid level and charge level
Situation of change is finely adjusted auto feed control system 3, and detecting liquid level system 5, laser material surface measurement system 4 and yield are surveyed
The 11 three cooperation of amount instrument substantially increases semiconductor photovoltaic quartz ampoule qualification rate.Core bar 1 is used to adjust quartzy caliber.
Claims (10)
1. a kind of semiconductor photovoltaic automatically controls charging production method with quartz ampoule, it is characterised in that includes the following steps：
(1) quartz sand purifying is handled：
Quartz sand after physical purification, chemical purification is subjected to chlorination processing, it is spare to obtain glass sand；
(2) quartz ampoule draws molding：
By glass sand be added to semiconductor photovoltaic with quartz ampoule automatically control charging production equipment charge door (2) in,
Crucible (7) inside is flowed by multijaw feed opening (6), charge door (2) is connected with auto feed control system (3), auto feed control
System (3) processed is divided into not to be connected with detecting liquid level system (5) and laser material surface measurement system (4) and yield monitoring instrument (11),
Auto feed control system (3) is fed back to by measuring liquid level and charge level variation and quartz ampoule yield respectively, automatically controls and adds
The feeding quantity of material mouth (2), glass sand export (10) outflow to get to semiconductor photovoltaic stone after melting by quartz ampoule
Ying Guan.
2. semiconductor photovoltaic according to claim 1 automatically controls charging production method with quartz ampoule, it is characterised in that institute
The physical purification step stated is：The quartz sand particle that D50 values are 150 μm is taken after quartz sand is crushed, washes quartz sand after desliming
With deionized water according to 1:The mass ratio of 1.2-1.5 is made into slurry.
3. semiconductor photovoltaic according to claim 2 automatically controls charging production method with quartz ampoule, it is characterised in that institute
The chemical purification step stated is：The sulfuric acid that mass fraction is 15-22% is added in into slurry, after stirring is impregnated 2-3 hours, by object
Material is sent to being dehydrated in filter press, and wherein the volume ratio of sulfuric acid and slurry is 1:0.8-1.2；Again will dehydration after quartz sand and
Deionized water is according to 1:The mass ratio of 1.8-2.2 is made into slurry, adjusts slurry to neutrality with ammonium hydroxide, stone is then added in into slurry
The EDTA of sand quality 0.3-0.8%, is dehydrated after being stirred 1-2 hours, is rinsed to neutrality and is dried with deionized water.
4. semiconductor photovoltaic according to claim 3 automatically controls charging production method with quartz ampoule, it is characterised in that institute
Stating chlorination processing step is：The quartz sand of drying is put into temperature and carries out 10-15 points of chlorination processing for 1100-1200 DEG C of chlorination furnace
Glass sand is obtained after clock.
5. semiconductor photovoltaic according to claim 4 automatically controls charging production method with quartz ampoule, it is characterised in that：Institute
The content of silica is more than 99.998% in the glass sand stated.
6. a kind of semiconductor photovoltaic automatically controls charging production equipment with quartz ampoule, including bell (12), furnace body (9) and setting
In the internal crucible (7) of furnace body (9), heating and heat-insulating device (8) is equipped between furnace body (9) and crucible (7), it is characterised in that：Institute
It states there are two being set on bell (12) and above charge door (2), charge door (2) is connected with auto feed control system (3), bell
(12) it is additionally provided with detecting liquid level system (5) on, yield monitoring instrument (11) is equipped at the quartz ampoule outlet (10) below furnace body (9),
The detecting liquid level system (5) and yield monitoring instrument (11) is connected respectively with auto feed control system (3).
7. semiconductor photovoltaic according to claim 6 automatically controls charging production equipment with quartz ampoule, it is characterised in that：Institute
It states and laser material surface measurement system (4) is additionally provided with inside bell (12), the laser material surface measurement system (4) controls with auto feed
System (3) is connected.
8. semiconductor photovoltaic according to claim 7 automatically controls charging production equipment with quartz ampoule, it is characterised in that：Institute
Charge door (2) is stated with multijaw feed opening (6) to be connected.
9. semiconductor photovoltaic according to claim 8 automatically controls charging production equipment with quartz ampoule, it is characterised in that：Institute
The multijaw feed opening (6) stated includes 2-12 pawl.
10. semiconductor photovoltaic according to claim 9 automatically controls charging production equipment with quartz ampoule, it is characterised in that：
Detecting liquid level system (5) is including two and above detecting liquid level needle.
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| CN201810140417.6A CN108218194A (en) | 2018-02-11 | 2018-02-11 | Semiconductor photovoltaic automatically controls charging production method and equipment with quartz ampoule |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110156301A (en) * | 2019-06-21 | 2019-08-23 | 连云港福东正佑照明电器有限公司 | A kind of production of quartz tubes continuous smelting device and production method |
| CN110171921A (en) * | 2019-06-24 | 2019-08-27 | 连云港福东正佑照明电器有限公司 | Prepare the uniform charging continuous induction melting furnace and its method of semiconductor and photovoltaic quartz ampoule |
| US11053152B2 (en) | 2015-12-18 | 2021-07-06 | Heraeus Quarzglas Gmbh & Co. Kg | Spray granulation of silicon dioxide in the preparation of quartz glass |
| US11236002B2 (en) | 2015-12-18 | 2022-02-01 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of an opaque quartz glass body |
| US11299417B2 (en) | 2015-12-18 | 2022-04-12 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of a quartz glass body in a melting crucible of refractory metal |
| US11339076B2 (en) | 2015-12-18 | 2022-05-24 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of carbon-doped silicon dioxide granulate as an intermediate in the preparation of quartz glass |
| US11492285B2 (en) | 2015-12-18 | 2022-11-08 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of quartz glass bodies from silicon dioxide granulate |
| US11492282B2 (en) | 2015-12-18 | 2022-11-08 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of quartz glass bodies with dew point monitoring in the melting oven |
| US11708290B2 (en) | 2015-12-18 | 2023-07-25 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of a quartz glass body in a multi-chamber oven |
| CN117142754A (en) * | 2023-09-05 | 2023-12-01 | 连云港福东正佑照明电器有限公司 | Quartz tube quartz sand high-temperature chlorination purifying furnace |
| US11952303B2 (en) | 2015-12-18 | 2024-04-09 | Heraeus Quarzglas Gmbh & Co. Kg | Increase in silicon content in the preparation of quartz glass |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203782028U (en) * | 2013-11-20 | 2014-08-20 | 江苏九鼎新材料股份有限公司 | Feeding device for glass fiber crucible |
| CN104192545A (en) * | 2014-06-27 | 2014-12-10 | 江苏大学 | Automatic straw material feeding device of ring die briquetting machine |
| CN107021606A (en) * | 2017-04-20 | 2017-08-08 | 江苏太平洋石英股份有限公司 | The method that continuous smelting method produces optical fiber outer tube |
| CN207891243U (en) * | 2018-02-11 | 2018-09-21 | 连云港福东正佑照明电器有限公司 | Semiconductor photovoltaic automatically controls charging production equipment with quartz ampoule |
-
2018
- 2018-02-11 CN CN201810140417.6A patent/CN108218194A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203782028U (en) * | 2013-11-20 | 2014-08-20 | 江苏九鼎新材料股份有限公司 | Feeding device for glass fiber crucible |
| CN104192545A (en) * | 2014-06-27 | 2014-12-10 | 江苏大学 | Automatic straw material feeding device of ring die briquetting machine |
| CN107021606A (en) * | 2017-04-20 | 2017-08-08 | 江苏太平洋石英股份有限公司 | The method that continuous smelting method produces optical fiber outer tube |
| CN207891243U (en) * | 2018-02-11 | 2018-09-21 | 连云港福东正佑照明电器有限公司 | Semiconductor photovoltaic automatically controls charging production equipment with quartz ampoule |
Non-Patent Citations (2)
| Title |
|---|
| 张泾生等: "矿用药剂", vol. 1, 冶金工业出版社, pages: 492 - 493 * |
| 郑翠红等: "石英砂提纯方法研究", 石英砂提纯方法研究, no. 5, pages 16 - 18 * |
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| US11708290B2 (en) | 2015-12-18 | 2023-07-25 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of a quartz glass body in a multi-chamber oven |
| US11053152B2 (en) | 2015-12-18 | 2021-07-06 | Heraeus Quarzglas Gmbh & Co. Kg | Spray granulation of silicon dioxide in the preparation of quartz glass |
| US11236002B2 (en) | 2015-12-18 | 2022-02-01 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of an opaque quartz glass body |
| US11299417B2 (en) | 2015-12-18 | 2022-04-12 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of a quartz glass body in a melting crucible of refractory metal |
| US11339076B2 (en) | 2015-12-18 | 2022-05-24 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of carbon-doped silicon dioxide granulate as an intermediate in the preparation of quartz glass |
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| US11492282B2 (en) | 2015-12-18 | 2022-11-08 | Heraeus Quarzglas Gmbh & Co. Kg | Preparation of quartz glass bodies with dew point monitoring in the melting oven |
| CN110156301B (en) * | 2019-06-21 | 2023-10-20 | 连云港福东正佑照明电器有限公司 | Continuous melting device and method for quartz tube production |
| CN110156301A (en) * | 2019-06-21 | 2019-08-23 | 连云港福东正佑照明电器有限公司 | A kind of production of quartz tubes continuous smelting device and production method |
| CN110171921B (en) * | 2019-06-24 | 2023-10-13 | 连云港福东正佑照明电器有限公司 | Uniform charging continuous melting furnace for preparing quartz tube for semiconductors and photovoltaics and method thereof |
| CN110171921A (en) * | 2019-06-24 | 2019-08-27 | 连云港福东正佑照明电器有限公司 | Prepare the uniform charging continuous induction melting furnace and its method of semiconductor and photovoltaic quartz ampoule |
| CN117142754A (en) * | 2023-09-05 | 2023-12-01 | 连云港福东正佑照明电器有限公司 | Quartz tube quartz sand high-temperature chlorination purifying furnace |
| CN117142754B (en) * | 2023-09-05 | 2024-04-05 | 连云港福东正佑照明电器有限公司 | Quartz tube quartz sand high-temperature chlorination purifying furnace |
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