CN108206641A - A kind of low-loss all-wave active rectifier - Google Patents
A kind of low-loss all-wave active rectifier Download PDFInfo
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- CN108206641A CN108206641A CN201611182560.9A CN201611182560A CN108206641A CN 108206641 A CN108206641 A CN 108206641A CN 201611182560 A CN201611182560 A CN 201611182560A CN 108206641 A CN108206641 A CN 108206641A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from dc input or output
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Rectifiers (AREA)
Abstract
The present invention provides a kind of low-power consumption all-wave active rectifier, the all-wave active rectifier includes electromagnetic induction termination power, cross-couplings NMOS crystal switch pipe circuits, active diode circuit, filter circuit, wherein, the output terminal connection cross-couplings NMOS crystal switch pipe circuits of electromagnetic induction termination power and the input terminal of active diode circuit, the output terminal connection filter circuit of active diode circuit, external input exchange signal Vin output voltage VDD_RF after active diode circuit, supply load uses after the filtered circuits of output voltage VDD_RF filter AC signal.Schottky diode or Low threshold MOS transistor are not used in all-wave active rectifier of the present invention, reduces the area of circuit layout, is conducive to the integrated of rectifier, and reduce extra mask and process, substantially reduces manufacture cost.
Description
Technical field
The present invention relates to technical field of integrated circuits more particularly to a kind of low-loss all-wave active rectifiers.
Background technology
Passive radio frequency identification (RFID) technology is widely applied (target identification, contactless smart card, medical treatment implantation by it
Deng) revolutionary life style is produced, still, for most of applications, passive RFID tags do not have embedded battery,
They can only can just be activated when close to transmitter.Referring to Fig. 1, this is existing passive RFID tags wireless power supply system frame
Figure, in passive RFID tags, radio frequency is captured by induction coil or antenna（Radio Frequency, RF) signal, then will
Ac high-voltage is generated in the energy transmission to resonant tank of coupling, then DC voltage is converted thereof into to signal by rectifier
Processor and other circuits provide power supply.Therefore, low-loss rectifier can extend tag read distance and reduce to reading
The requirement of card device transmission power, design and research have very important significance.
It is existing full-wave rectifier circuit figure referring to Fig. 2.The full-wave rectifier is by four Schottky diode link-groups
It closes, output terminal one storage capacitor of parallel connection, simple in structure, output voltage ripple is small, but Schottky diode has 0.7V to 1V's
Pressure drop can not use in low-voltage system, and be difficult integrated in existing CMOS technology, so, existing diode structure
It has been be abandoned that, but the MOS transistor that diode is used to link is replaced.It is existing switching mode full-wave rectifier electricity referring to Fig. 3
Lu Tu, the operation principle of the switching mode full-wave rectifier are as follows：When Vin is in positive half period, | as Vin continues to increase to
Cut-in voltage Vthn, the MN20 conducting of MN20.When Vin1-VDD_RF voltage differences are more than the cut-in voltage of MP10 | Vthp | when, i.e.,
Vin10-VDD_RF>| Vthp |, MP10 is connected, the access of Vin, MP10, VDD_RF, MN20, Vin20 formation at this time, on access
Pressure drop is | Vthp |+Vdsn, and persistently give load RL power supplies.Conversely, when Vin is in negative half-cycle, as Vin continues reversely
Increase to cut-in voltage Vthn, the MN10 conducting of MN10.When Vin20-VDD_RF voltage differences are more than the cut-in voltage of MP20 | Vthp
| when, i.e. Vin20-VDD_RF>| Vthp |, MP20 conductings, Vin10, MP20, VDD_RF, MN10, Vin20 form logical again at this time
Road, the pressure drop on access be | Vthp |+Vdsn, and load RL power supplies are persistently given, in this way, VDD_RF is always a fixed positive electricity
Pressure persistently can provide power supply to signal processor and other circuits.But no matter Vin is in positive half period or negative half period
Phase, the pressure drop on rectifier conductive path be | Vthp |+Vdsn, but for low pressure and high power consumption system, | Vthp |+Vdsn
Pressure drop will consume larger input voltage, substantially reduce system performance or even system can not work normally.It is modern advanced
CMOS technology can further reduce cut-in voltage Vth, replace MP10 and MP20 with the NMOS transistor of zero cut-in voltage, in this way
The performance of rectification circuit can be greatly improved, but the NMOS transistor of zero cut-in voltage needs additional increase mask and process, meeting
Increase manufacture cost.
Summary, existing separate type schottky diode device is difficult to integrate, and expensive, occupies very big face
Product, and traditional Schottky diode is replaced with MOS transistor, it solves integration problem, reduces cost to a certain extent
And area, but MOS transistor diode cannot still solve the problems, such as pressure drop, and advanced CMOS process is used to reduce threshold voltage
Method can improve manufacture cost again.Therefore it designs a low-voltage and integrates low-loss all-wave active rectifier just into the present invention's
Target.
Invention content
In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a kind of low-loss all-wave active rectifications
Device has power transistor, and all power transistor groundworks have higher rectification efficiency on and off.
In order to reach foregoing invention purpose, technical scheme of the present invention is realized as follows：
A kind of low-power consumption all-wave active rectifier, which is characterized in that the all-wave active rectifier includes electromagnetic induction coupling electricity
Road, cross-couplings NMOS crystal switch pipes circuit, active diode circuit, filter circuit, wherein, electromagnetic induction termination power
Output terminal connects the input terminal of cross-couplings NMOS crystal switch pipe circuits and active diode circuit, active diode circuit
Output terminal connects filter circuit, external input exchange signal Vin output voltage VDD_RF after active diode circuit, output
Supply load uses after the filtered circuits of voltage VDD_RF filter AC signal.
Preferably, in the all-wave active rectifier, electromagnetic induction termination power is by two inductors and a capacitor
Composition, two inductors are respectively the first inductor and the second inductor, and a capacitor is the first capacitor, wherein, first
The both ends connection AC power of inductor, one end of the second inductor connect one end of the first capacitor, the second inductor it is another
One end connects the other end of the first capacitor, and the first inductor is connected with the second inductor by mutual inductance.
Preferably, in the all-wave active rectifier, cross-couplings NMOS crystal switch pipe circuits are by two NMOS crystal
Pipe forms, respectively the first NMOS transistor and the second NMOS transistor, wherein, the source of the first NMOS transistor and second
The source of NMOS transistor is connected and meets relatively GND, and the grid end of the first NMOS transistor connects the leakage of the second NMOS transistor
End, the grid end of the second NMOS transistor connect the drain terminal of the first NMOS transistor, and the drain terminal of the first NMOS transistor connects external reception
One end of antenna, the drain terminal of the second NMOS transistor connect the other end of external reception antenna.
Preferably, in the all-wave active rectifier, active diode circuit includes comparator, buffer and PMOS crystal
Pipe, wherein, comparator is made of two primary comparators, respectively first comparator and the second comparator；Buffer is by two
Primary buffer composition, respectively the first buffer and the second buffer；PMOS transistor is made of two native transistors, point
It Wei not the first PMOS transistor and the second PMOS transistor；The input terminal of output the first buffer of termination of first comparator, the
The grid end of output the first PMOS transistor of termination of one buffer, the negative input of first comparator terminate the first PMOS transistor
Source, the positive input of first comparator terminate the drain terminal of the first PMOS transistor, the second buffering of output termination of the second comparator
The input terminal of device, the grid end of output the second PMOS transistor of termination of the second buffer, the negative input termination the of the second comparator
The source of two PMOS transistors, the positive input of the second comparator terminate the drain terminal of the second PMOS transistor, the first PMOS transistor
Source connect the drain terminal of the first NMOS transistor, the source of the second PMOS transistor connects the drain terminal of the second NMOS transistor, first
The drain terminal of PMOS transistor connects the drain terminal of the second PMOS transistor, and as the output terminal of all-wave active rectifier.
Preferably, the filter circuit is made of two capacitors and a resistance, and two capacitors are respectively the second electricity
Container and third capacitor, a resistance are divided into first resistor, wherein, a termination all-wave active rectifier of the second capacitor
Output terminal, another termination of the second capacitor relatively VSS, the output terminal of a termination all-wave active rectifier of first resistor
VDD_RF, one end of another termination third capacitor of first resistor and as the output terminal VDDA of all-wave active rectifier,
Another termination of three capacitors relatively GND.
Preferably, in the cross-couplings NMOS crystal switches pipe circuit, the first NMOS transistor and the 2nd NMOS crystal
In linear zone when pipe is opened, pressure drop is in 200mv or so.
Preferably, in the active diode circuit, the power supply of the first buffer and the second buffer is active whole by all-wave
The output voltage for flowing device output terminal VDDA provides.
Preferably, in the active diode circuit, the first PMOS transistor and the second PMOS transistor are in when opening
Linear zone, pressure drop is in 200mv or so.
Preferably, in the filter circuit, the second capacitor is energy storage filter condenser, first resistor and third capacitor
RC filter networks are formed, make the output terminal VDDA output voltage stabilizations of all-wave active rectifier, are used for load.
The present invention compared with existing technical solution, has the advantage that as a result of above-mentioned structure：
1）PMOS transistor groundwork is on and off, PMOS transistor when opening in active diode circuit of the present invention
Linear zone, pressure drop very little, rectifier can be very good to meet low-pressure system power supply；
2）NMOS transistor, PMOS transistor are all operated in linear zone when charging to capacitor in the present invention, pressure drop very little, greatly
Improve rectification efficiency greatly；
3）The use of active diode in the present invention, improves rectification efficiency, so as to reduce the requirement of filter condenser, subtracts
Small chip area；
4）Schottky diode or Low threshold MOS transistor are not used in rectifier of the present invention, circuit version can be reduced in this way
The area of figure is conducive to the integrated of rectifier, and can reduce extra mask and process, substantially reduces manufacture cost.
The present invention will be further described with reference to the accompanying drawings and detailed description.
Description of the drawings
Fig. 1 is existing passive RFID tags wireless power supply system block diagram.
Fig. 2 is existing full-wave rectifier circuit figure.
Fig. 3 is existing switching mode all-wave active rectifier circuits figure.
Fig. 4 is the all-wave active rectifier circuits figure that the present invention is embodied.
Fig. 5 is the all-wave active rectifier course of work circuit diagram that the present invention is embodied.
Fig. 6 is the all-wave active rectifier voltage conversion efficiency comparison diagram that the present invention is embodied.
Specific embodiment
Referring to Fig. 4, the low-loss all-wave active rectifier circuits figure being embodied for the present invention.The all-wave active rectification
Device includes electromagnetic induction termination power 101, cross-couplings NMOS crystal switch pipes circuit 102, active diode circuit 103, filter
Wave circuit 104.
Wherein, electromagnetic induction termination power 101 includes：First inductor L1, the second inductor L2, the first capacitor C1.
The both ends connection AC power of first inductor L1, one end of the first capacitor C1 of one end connection of the second inductor L2, second
The other end of inductor L2 connects the other end of the first capacitor C1, and the second inductor L2 and the first inductor L1 pass through mutual inductance system
Number is connected.
Cross-couplings NMOS crystal switch pipes circuit 102 includes the first NMOS transistor MN1 and the second NMOS transistor
MN2.The source of first NMOS transistor MN1 is connected with the source of the second NMOS transistor MN2 and meets relatively GND, and first
The grid end of NMOS transistor MN1 connects the drain terminal of the second NMOS transistor MN2, and the grid end of the second NMOS transistor MN2 connects first
The drain terminal of NMOS transistor MN1, the drain terminal of the first NMOS transistor MN1 meet one end of reception antenna, the second NMOS transistor MN2
Drain terminal connect the other end of reception antenna.
Active diode circuit 103 includes first comparator CMP1, the second comparator CMP2, the first buffer BUF1, the
Two buffer BUF2, the first PMOS transistor MP1 and the second PMOS transistor MP2.The output termination the of first comparator CMP1
The input terminal of one buffer BUF1, the grid end of the first PMOS transistor MP1 of output termination of the first buffer BUF1, first compares
The negative input of device CMP1 terminates the source of the first PMOS transistor MP1, and the positive input of first comparator CMP1 terminates the first PMOS
The drain terminal of transistor MP1, the input terminal of the second buffer BUF2 of output termination of the second comparator CMP2, the second buffer BUF2
The second PMOS transistor MP2 of output termination grid end, the negative input of the second comparator CMP2 terminates the second PMOS transistor MP2
Source, the positive input of the second comparator CMP2 terminates the drain terminal of the second PMOS transistor MP2, the first PMOS transistor MP1's
Source connects the drain terminal of the first NMOS transistor MN1, and the source of the second PMOS transistor MP2 connects the leakage of the second NMOS transistor MN2
End, the drain terminal of the first PMOS transistor MP1 connect the drain terminal of the second PMOS transistor MP2, and as the output terminal VDD_ of rectifier
RF。
Filter circuit 104 includes two capacitors and a resistance, and two capacitors are respectively the second capacitor C2 and the
Three capacitor C3, a resistance is first resistor R1.The output terminal VDD_RF of a termination rectifier of second capacitor C2, second
The output terminal VDD_RF, first resistor R1 of a termination rectifier of another termination of capacitor C2 relatively VSS, first resistor R1
Another termination third capacitor C3 one end, and be used as another output terminal VDDA, VDDA voltages than VDD_RF voltage stabilization,
Power supply use is more suitable for, but driving force is limited, another termination of third capacitor C3 relatively GND.
The all-wave active rectifier course of work circuit diagram being embodied referring to Fig. 5, the present invention.The all-wave active rectifier
The course of work is specific as follows：
When Vin is in positive half period, the course of work of rectifier can be divided into three state S1~S2~S3.In the S1 phases
Between, work as 0V<Vin<During Vthn, the second NMOS transistor NM1 is closed, at this time 0V<Vin1<VDD_RF, at this time Vin1<
VDD_RF, the first PMOS transistor MP1 are also at closed state, and it is brilliant to then flow through the second NMOS transistor NM2 and the first PMOS
The electric current In2+Ip1 of body pipe MP1 is zero.Work as Vin>During Vthn, the second NMOS transistor NM2 is opened, and rectifier enters S2 states,
As long as Vin1<VDD_RF, the first PMOS transistor MP1 are at closed state, at this point, flow through the second NMOS transistor NM2 and
The electric current In2+Ip1 of first PMOS transistor MP1 is zero.As Vin continues to increase, work as Vin1>During VDD_RF, the first PMOS
Transistor MP1 is also opened, and rectifier enters S3 states, at this point, MN2, Vin2, Vin1, MP1, VDD_RF form access, by the
The electric current In2+Ip1 of bi-NMOS transistor NM2 and the first PMOS transistor MP1 charge to the second capacitor C2.
First resistor R1 and third capacitance C3 in filter circuit 104 of the present invention, according to the power dissipation design of actual circuit its
The size of R1 and C3 can filter output high-frequency noise, and VDD_RF when big power consumption works has been isolated, it is interfered, VDDA output electricity
Pressure is more stablized, and VDDA can be work perfectly well as the circuit more demanding to power supply stability and provide power supply.
It should be noted that the above embodiment only illustrates the basic ideas of the present invention in a schematic way, and in the present invention
Related built-up circuit rather than built-up circuit number, shape, device arrangement mode, connection mode during according to actual implementation are painted
System.The kenel of each circuit, quantity, connection mode, device arrangement mode, device parameters can be random change during its actual implementation
Become.
Embodiment described above is only preferred embodiments of the present invention, it is impossible to limit prolonging for technical solution of the present invention
It stretches.It is all to belong to the modification of any known technology, the equivalent variations that those skilled in the art are made on the basis of technical solution of the present invention
Changed etc. with obvious, be within the scope of protection of the invention within.
Claims (9)
1. a kind of low-loss all-wave active rectifier, which is characterized in that the all-wave active rectifier is coupled including electromagnetic induction
Circuit, cross-couplings NMOS crystal switch pipes circuit, active diode circuit, filter circuit, wherein, electromagnetic induction termination power
Output terminal connection cross-couplings NMOS crystal switch pipe circuits and active diode circuit input terminal, active diode circuit
Output terminal connection filter circuit, external input exchange signal Vin output voltage VDD_RF after active diode circuit are defeated
Go out supply load after the filtered circuits of voltage VDD_RF filter AC signal to use.
2. electromagnetic induction termination power as described in claim 1, which is characterized in that the electromagnetic induction termination power is by two
Inductor and capacitor composition, two inductors are respectively the first inductor and the second inductor, and a capacitor is the
One capacitor, wherein, the both ends connection AC power of the first inductor, one end of the second inductor connects the one of the first capacitor
End, the other end of the second inductor connect the other end of the first capacitor, and the first inductor and the second inductor pass through mutual inductance system
Number is connected.
3. cross-couplings NMOS crystal switches pipe circuit as described in claim 1, which is characterized in that the cross-couplings NMOS
Crystal switch pipe circuit is made of two NMOS transistors, respectively the first NMOS transistor and the second NMOS transistor, wherein,
The source of first NMOS transistor is connected with the source of the second NMOS transistor and connects relatively GND, the first NMOS transistor
Grid end connect the drain terminal of the second NMOS transistor, the grid end of the second NMOS transistor connects the drain terminal of the first NMOS transistor, first
The drain terminal of NMOS transistor connects one end of external reception antenna, and the drain terminal of the second NMOS transistor meets the another of external reception antenna
End.
4. active diode circuit as described in claim 1, which is characterized in that the active diode circuit includes comparing
Device, buffer and PMOS transistor, wherein, comparator is made of two primary comparators, respectively first comparator and second
Comparator；Buffer is made of two primary buffers, respectively the first buffer and the second buffer；PMOS transistor is by two
A native transistor composition, respectively the first PMOS transistor and the second PMOS transistor；The output termination the of first comparator
The input terminal of one buffer, the grid end of output the first PMOS transistor of termination of the first buffer, the negative input of first comparator
The source of the first PMOS transistor is terminated, the positive input of first comparator terminates the drain terminal of the first PMOS transistor, and second compares
The input terminal of output the second buffer of termination of device, the grid end of output the second PMOS transistor of termination of the second buffer, second
The negative input of comparator terminates the source of the second PMOS transistor, and the positive input of the second comparator terminates the second PMOS transistor
Drain terminal, the source of the first PMOS transistor connect the drain terminal of the first NMOS transistor, and the source of the second PMOS transistor connects second
The drain terminal of NMOS transistor, the drain terminal of the first PMOS transistor connect the drain terminal of the second PMOS transistor, and active whole as all-wave
Flow the output terminal of device.
5. filter circuit as described in claim 1, which is characterized in that the filter circuit is by two capacitors and a resistance
Composition, two capacitors are respectively the second capacitor and third capacitor, and a resistance is first resistor, wherein, the second capacitance
The output terminal of one termination all-wave active rectifier of device, another termination of the second capacitor relatively VSS, one end of first resistor
The output terminal VDD_RF of all-wave active rectifier is met, one end of another termination third capacitor of first resistor simultaneously has as all-wave
The output terminal VDDA of source rectifier, another termination of third capacitor relatively GND.
6. cross-couplings NMOS crystal switches pipe circuit as claimed in claim 3, which is characterized in that the cross-couplings NMOS
In crystal switch pipe circuit, in linear zone when the first NMOS transistor and the second NMOS transistor are opened, pressure drop is on a 200mv left sides
It is right.
7. active diode circuit as claimed in claim 4, which is characterized in that in the active diode circuit, first is slow
The power supply for rushing device and the second buffer is provided by the output voltage of all-wave active rectifier output terminal VDDA.
8. active diode circuit as claimed in claim 4, which is characterized in that in the active diode circuit, first
In linear zone when PMOS transistor and the second PMOS transistor are opened, pressure drop is in 200mv or so.
9. filter circuit as claimed in claim 5, which is characterized in that in the filter circuit, the second capacitor is filtered for energy storage
Wave capacitor, first resistor and third capacitor composition RC filter networks, export the output terminal VDDA of all-wave active rectifier
Voltage stabilization is used for load.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611182560.9A CN108206641A (en) | 2016-12-20 | 2016-12-20 | A kind of low-loss all-wave active rectifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611182560.9A CN108206641A (en) | 2016-12-20 | 2016-12-20 | A kind of low-loss all-wave active rectifier |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1192474C (en) * | 1998-12-02 | 2005-03-09 | 精工爱普生株式会社 | Power supply device, power supply method, portable electronic apparatus, and electronic timepiece |
| US20110134674A1 (en) * | 2009-12-07 | 2011-06-09 | Texas Instruments Incorporated | Active rectifier and method for energy harvesting power management circuit |
-
2016
- 2016-12-20 CN CN201611182560.9A patent/CN108206641A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1192474C (en) * | 1998-12-02 | 2005-03-09 | 精工爱普生株式会社 | Power supply device, power supply method, portable electronic apparatus, and electronic timepiece |
| US20110134674A1 (en) * | 2009-12-07 | 2011-06-09 | Texas Instruments Incorporated | Active rectifier and method for energy harvesting power management circuit |
Non-Patent Citations (2)
| Title |
|---|
| GAURAV BAWA等: "A High Efficiency Full-Wave Rectifier in Standard CMOS Technology", 《2007 50TH MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS》 * |
| HYUNG-MIN LEE等: "An Integrated Power-Efficient Active Rectifier With Offset-Controlled High Speed Comparators for Inductively Powered Applications", 《IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS—I: REGULAR PAPERS》 * |
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Address after: 100083 18 floor, West Tower, block D, Tongfang science and Technology Plaza, 1 Wang Zhuang Road, Wudaokou, Haidian District, Beijing. Applicant after: Purple light co core Microelectronics Co., Ltd. Address before: 100083 18 floor, West Tower, block D, Tongfang science and Technology Plaza, 1 Wang Zhuang Road, Wudaokou, Haidian District, Beijing. Applicant before: Beijing Tongfang Microelectronics Company |
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Application publication date: 20180626 |
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