CN108199586A - A kind of high potential high voltage direct current draw-out power supply device - Google Patents
A kind of high potential high voltage direct current draw-out power supply device Download PDFInfo
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- CN108199586A CN108199586A CN201810072417.7A CN201810072417A CN108199586A CN 108199586 A CN108199586 A CN 108199586A CN 201810072417 A CN201810072417 A CN 201810072417A CN 108199586 A CN108199586 A CN 108199586A
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- 238000002955 isolation Methods 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims description 41
- 230000003068 static effect Effects 0.000 claims description 8
- 239000002131 composite material Substances 0.000 abstract 1
- 230000005611 electricity Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000013024 troubleshooting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
A kind of high potential high voltage direct current draw-out power supply device of the present invention, belongs to power electronics field；It is a kind of suitable for the control of VSC HVDC and STATCOM submodule and the power supply of driving plate the technical problem to be solved is that providing；Solve technical solution that the technical problem uses for：A kind of high potential high voltage direct current draw-out power supply device; including filter circuit, start-up circuit, protection and control circuit, isolation accessory power supply, fault collection circuit; BUCK converters and isolation double-transistor flyback converter; the input terminal of BUCK converters is connected with the output terminal of filter circuit, and the output terminal of BUCK converters is connected with the input terminal of double-transistor flyback converter is isolated；It the composite can be widely applied to for electrical domain.
Description
Technical field
A kind of high potential high voltage direct current draw-out power supply device of the present invention, belongs to power electronics field, and in particular to electricity
Net modular multilevel（MMC）Submodule Control card power supply device.
Background technology
With the Static Var Compensator based on MMC（STATCOM）And flexible DC transmission technology（VSC-HVDC）In electricity
Popularization and application in net, the powerup issue of MMC submodule block control units gradually display.Fig. 1-Fig. 3 gives several typical cases
MMC submodular circuits topology.Fig. 1 is half-bridge submodule, and Fig. 2 is full-bridge submodule, and Fig. 3 is clamping type Shuangzi module, wherein
Half-bridge submodule is most basic topology, and economic performance is best；Full-bridge submodule and clamping type Shuangzi module are relatively strong due to having
Troubleshooting capability also receive primary study.
Compared to VSC-HVDC, STATCOM is directly accessed to the system voltage and is normally no higher than 35kV, MMC submodule direct currents
Pressure compares relatively low, and submodule number is relatively fewer, and direct current, which takes, also relatively easily to be realized, such as application publication number is CN
Shown in the application documents of 106981973 A.VSC-HVDC MMC submodules are typically located at hundreds of kilovolts of high potential, the electricity of work
Magnetic environment is severe, high to the reliability requirement of MMC submodules work.Submodule control unit in the block and switching tube driving unit
Secondary low-voltage is required for power, is directly taken from hundreds of kilovolts of high voltage direct current electric obviously both unrealistic or uneconomical.Out of submodule
Electricity is taken to become the choosing of certainty on the storage capacitor C of portion itself band.Existing patent CN 103051174B and patent CN
103683857B employs similar scheme.The two the difference lies in, the former employ two-stage isolation, i.e., the first order be every
From flyback converter, and the latter employs level-one isolation.Isolation flyback converter all employ input series connection, output-parallel it is anti-
Swash topology.Input voltage range is 300~3000 in the two patents（3700）V inputs no-load voltage ratio close to 10:1.
Patent CN 103051174B are not described in detail its inner solution, are carried out below with CN 103683857B
Simple analysis.Isolation flyback converter employs the MOSFET of 1200V, although relatively low MOSFET voltages are so that switching frequency
It can improve, but flyback converter can generate very high due to voltage spikes at MOSFET both ends, input that at least can be more than 2 times is electric
Pressure, in other words, the input voltage of each single-ended reverse exciting is up to 600V, if input voltage is 3600V, at least needs 6
A flyback converter series connection, along with equalizer circuit, one side volume will be very huge, and another aspect reliability can also reduce；
In addition, the output voltage 15V of the second level, also more much lower than patent CN 103051174B, for VSC-HVDC draw-out power supplies,
Also it is improper.Current existing patent both for 3000V and following DC voltage take can, and MMC valve direct current now
Voltage has been lifted to 6000V~10000V, and currently existing scheme can not meet practical requirement of engineering.
In addition, as shown in Figure 1, by several engineerings to have put into operation, the VSC- based on MMC applied in power grid is found
HVDC, the half-bridge submodule quantity needed is very huge, the soft straight engineering in Xiamen such as to have put into operation, half-bridge submodule in each bridge arm
Number up to 216, the half-bridge submodule quantity of entire 12 bridge arms of engineering reaches 2592, and volume and weight is all considerable.
With the appearance of compression joint type IGBT, it is mentioned, that is, is used again using the submodule scheme of a small amount of crimping IGBT inside submodule
The scheme that IGBT connects and MMC is combined, and the proposition of the program, will certainly lead to further carrying for dc-link capacitance voltage
It rises.How from higher direct current electric pressure（More than the 3700V in aforementioned patent）Control panel and the confession electric flux of driving plate are obtained, into
For new problem.
Invention content
A kind of high potential high voltage direct current draw-out power supply device of the present invention, overcomes the shortcomings of the prior art, provides
A kind of power supply controlled suitable for VSC-HVDC and STATCOM submodules with driving plate.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention is：A kind of high potential high voltage direct current takes can electricity
Source device including filter circuit, start-up circuit, protection and control circuit, isolation accessory power supply, fault collection circuit, further includes
BUCK converters and isolation double-transistor flyback converter, the input terminal of BUCK converters are connected with the output terminal of filter circuit,
The output terminal of BUCK converters is connected with the input terminal of double-transistor flyback converter is isolated.
Further, the output voltage of the BUCK converters is 90~900V of direct current, the isolation double-transistor flyback converter
Output voltage be direct current ± 15V.
Further, the BUCK converters include a metal-oxide-semiconductor, the source electrode of the metal-oxide-semiconductor and the filter circuit it is negative
Pole output terminal is altogether.
Further, the BUCK converters include not more than five metal-oxide-semiconductors and connect the metal-oxide-semiconductor array to be formed, gate-drive
Circuit, dynamic and static state voltage equipoise network and isolating transformer, the output terminal of isolating transformer and the input terminal of gate drive circuit
It is connected, the gate pole of each metal-oxide-semiconductor in the metal-oxide-semiconductor array is connected with the output terminal of single gate drive circuit, source electrode and leakage
Two input terminals of the pole respectively with single dynamic and static state voltage equipoise network are connected.
Further, the isolation double-transistor flyback converter includes capacitance C1, capacitance C2, metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, clamper two
Pole pipe D1, clamp diode D2, diode D3, flyback transformer T, resistance R, the source electrode of metal-oxide-semiconductor Q1 is with clamp diode D1's
Cathode is connected to form the first branch, and the anode of clamp diode D2 and the drain electrode of metal-oxide-semiconductor Q2 are connected to form the second branch, first
Road, the second branch are in parallel with capacitance C1, the both ends of the primary coil of flyback transformer T respectively with the cathode of clamp diode D1 and
The anode of clamp diode D2 is connected, and secondary coil, the diode D3 of flyback transformer T connect forming circuit with capacitance C2, electricity
Resistance R and capacitance C2 is arranged in parallel, and primary coil upper end and the secondary coil lower end of flyback transformer T are Same Name of Ends.
The present invention has the advantages that compared with prior art.
1. the present invention can greatly improve the no-load voltage ratio range of input voltage, it is particularly suitable for using compression joint type IGBT series connection
Submodule.
2. theoretically input voltage of the invention can be up to 20kV, the exploitation for follow-up high voltage direct current draw-out power supply provides
Technological guidance.
It, can be up to 200 3. the input range of power supply of the present invention is wide:It is realized in the range of 1.
4. the present invention is not very high draw-out power supply for input range variation requirement, due to isolation double-transistor flyback transformation
Device is inputted for wide scope, and prime BUCK circuits can use opened loop control, reduce the complexity of control system.
5. prime BUCK contactors pipe of the present invention is used with input direct-current high voltage negative for ground mode, prime is simplified
The driving of BUCK circuits, under 4000V input voltages and existing device level, single branch metal-oxide-semiconductor can be met the requirements.
Description of the drawings
The present invention is described further below in conjunction with the accompanying drawings.
Fig. 1 is the circuit topology of MMC half-bridge submodules.
Fig. 2 is the circuit topology of MMC full-bridge submodules.
Fig. 3 is the circuit topology of MMC clamping type Shuangzi modules.
Fig. 4 is circuit structure block diagram of the present invention.
Fig. 5 realizes BUCK converter circuit schematic diagrams for the embodiment of the present invention one by single metal-oxide-semiconductor.
Fig. 6 is the local circuit schematic diagram that the embodiment of the present invention two is realized BUCK converters by metal-oxide-semiconductor array.
The circuit diagram of double-transistor flyback converter is isolated in Fig. 7 positions present invention.
Specific embodiment
As shown in figure 4, the present invention includes filter circuit, start-up circuit, protection and control circuit, isolation accessory power supply, event
Hinder Acquisition Circuit, BUCK converters and isolation double-transistor flyback converter, the input terminals of BUCK converters and filter circuit it is defeated
Outlet is connected, and the output terminal of BUCK converters is connected with the input terminal of double-transistor flyback converter is isolated.
As shown in fig. 7, isolation double-transistor flyback converter includes capacitance C1, capacitance C2, metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, clamper two
Pole pipe D1, clamp diode D2, diode D3, flyback transformer T, resistance R, the source electrode of metal-oxide-semiconductor Q1 is with clamp diode D1's
Cathode is connected to form the first branch, and the anode of clamp diode D2 and the drain electrode of metal-oxide-semiconductor Q2 are connected to form the second branch, first
Road, the second branch are in parallel with capacitance C1, the both ends of the primary coil of flyback transformer T respectively with the cathode of clamp diode D1 and
The anode of clamp diode D2 is connected, and secondary coil, the diode D3 of flyback transformer T connect forming circuit with capacitance C2, electricity
Resistance R and capacitance C2 is arranged in parallel, and primary coil upper end and the secondary coil lower end of flyback transformer T are Same Name of Ends.
Embodiment one
As shown in figure 5, BUCK converters include a metal-oxide-semiconductor, the source electrode of metal-oxide-semiconductor and the cathode output end of filter circuit are altogether.
The difference lies in the metal-oxide-semiconductor of BUCK circuits of the present invention and the cathode of input direct-current voltage are altogether with classical BUCK circuits.In this way
The benefit of modification is that the driving of metal-oxide-semiconductor is relatively easily realized, especially when not needing to switching tube series connection.If for example, input
Voltage is less than 4000V, selects 4500V high-pressure MOSs if realizing, can be directly driven by driving circuit without being isolated.
Embodiment two
As shown in fig. 6, the single metal-oxide-semiconductor in embodiment one can also be by being substituted with lower structure, which includes three metal-oxide-semiconductor strings
Join formed metal-oxide-semiconductor array, gate drive circuit, dynamic and static state voltage equipoise network and isolating transformer, isolating transformer it is defeated
Outlet is connected with the input terminal of gate drive circuit, gate pole and the single gate drive circuit of each metal-oxide-semiconductor in metal-oxide-semiconductor array
Output terminal be connected, two input terminals of the source electrode and drain electrode respectively with single dynamic and static state voltage equipoise network are connected.Dynamic voltage balancing
The presence of network and static state voltage equipoise network is the voltage-sharing in order to solve MOS series connection.
The present invention is described further below.
Present invention input high-voltage dc voltage, exports, high direct voltage can be reduced to defeated by first order BUCK converters
The input voltage of 5%~10% entered, the substantially second level isolation double-transistor flyback converter is entered within 900V.It powers to improve
Efficiency, two level conversions are realized using DC/DC.
The minimum duty cycle of first order BUCK converters can be arranged on 5%, i.e. the no-load voltage ratio of first order BUCK converters exists
20:1, the no-load voltage ratio of entire converter can be up to 200 times.
The dielectric strength and local discharging level of second level isolation double-transistor flyback transformer should be according to input direct-current high pressures
To determine.Second level isolation double-transistor flyback transformer employs the DC/DC topologys of both-end flyback, and one side draw-out power supply power leads to
Often within 100W, both-end flyback is more suitable；On the other hand, due to the presence of clamp diode D1, D2 so that BUCK is converted
Metal-oxide-semiconductor voltage in device does not exceed 900V, that is to say, that can select common metal-oxide-semiconductor on the market, have preferable economical
Type.Such as by taking existing 4500V high-voltage MOSFETs on the market as an example, 5 series connection, manageable input voltage theoretically can be with
Up to 22.5kV, it is sufficient to meet major part MMC module demands.The consistency of flyback transformer secondary driving circuit connects to MOS
Whether successful most important, if the metal-oxide-semiconductor of series connection is excessive, flyback transformer secondary will be excessive, becomes so as to cause consistency
Difference, eventually leads to metal-oxide-semiconductor series connection failure, this is also the reason of present invention emphasizes to connect no more than 5 metal-oxide-semiconductors.Other, such as
Ensure consistency of device etc., also must be considered that in practice.
Although the present invention, those skilled in the art are particularly shown and described with reference to its exemplary embodiment
It should be understood that in the case where not departing from the spirit and scope of the present invention that claim is limited, form can be carried out to it
With the various changes in details.
Claims (5)
1. a kind of high potential high voltage direct current draw-out power supply device, including filter circuit, start-up circuit, protection and control circuit, every
From accessory power supply, fault collection circuit, it is characterised in that：Including BUCK converters and isolation double-transistor flyback converter, BUCK becomes
The input terminal of parallel operation is connected with the output terminal of filter circuit, and the output terminal of BUCK converters is with being isolated double-transistor flyback converter
Input terminal is connected.
2. a kind of high potential high voltage direct current draw-out power supply device according to claim 1, it is characterised in that：The BUCK becomes
The output voltage of parallel operation is 90~900V of direct current, and the output voltage of the isolation double-transistor flyback converter is direct current ± 15V.
3. a kind of high potential high voltage direct current draw-out power supply device according to claim 1, it is characterised in that：The BUCK becomes
Parallel operation includes a metal-oxide-semiconductor, and the cathode output end of the source electrode of the metal-oxide-semiconductor and the filter circuit is altogether.
4. a kind of high potential high voltage direct current draw-out power supply device according to claim 2, it is characterised in that：The BUCK becomes
Parallel operation include not more than five metal-oxide-semiconductors connect the metal-oxide-semiconductor array to be formed, gate drive circuit, dynamic and static state voltage equipoise network and
Isolating transformer, the output terminal of isolating transformer are connected with the input terminal of gate drive circuit, each in the metal-oxide-semiconductor array
The gate pole of metal-oxide-semiconductor is connected with the output terminal of single gate drive circuit, source electrode and drain electrode respectively with single dynamic and static state voltage equipoise
Two input terminals of network are connected.
5. a kind of high potential high voltage direct current draw-out power supply device according to claim 1, it is characterised in that：The isolation is double
Pipe flyback converter includes capacitance C1, capacitance C2, metal-oxide-semiconductor Q1, metal-oxide-semiconductor Q2, clamp diode D1, clamp diode D2, two poles
Pipe D3, flyback transformer T, resistance R, the source electrode of metal-oxide-semiconductor Q1 are connected to form the first branch, clamper with the cathode of clamp diode D1
The anode of diode D2 is connected to form the second branch with the drain electrode of metal-oxide-semiconductor Q2, and the first branch, the second branch are in parallel with capacitance C1,
Anode of the both ends of the primary coil of flyback transformer T respectively with the cathode of clamp diode D1 and clamp diode D2 is connected,
Secondary coil, the diode D3 of flyback transformer T connects forming circuit with capacitance C2, and resistance R is arranged in parallel with capacitance C2, flyback
The primary coil upper end of transformer T is Same Name of Ends with secondary coil lower end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810072417.7A CN108199586A (en) | 2018-01-25 | 2018-01-25 | A kind of high potential high voltage direct current draw-out power supply device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810072417.7A CN108199586A (en) | 2018-01-25 | 2018-01-25 | A kind of high potential high voltage direct current draw-out power supply device |
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| Publication Number | Publication Date |
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| CN108199586A true CN108199586A (en) | 2018-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810072417.7A Pending CN108199586A (en) | 2018-01-25 | 2018-01-25 | A kind of high potential high voltage direct current draw-out power supply device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110545143A (en) * | 2019-09-19 | 2019-12-06 | 广东美的制冷设备有限公司 | Electric control insulation circuit and electric control converter |
| CN114094859A (en) * | 2021-11-18 | 2022-02-25 | 广东电网有限责任公司 | Power supply circuit of flexible direct-current transmission control panel |
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Cited By (3)
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| CN110545143A (en) * | 2019-09-19 | 2019-12-06 | 广东美的制冷设备有限公司 | Electric control insulation circuit and electric control converter |
| CN110545143B (en) * | 2019-09-19 | 2021-05-25 | 广东美的制冷设备有限公司 | Electric control insulation circuit and electric control converter |
| CN114094859A (en) * | 2021-11-18 | 2022-02-25 | 广东电网有限责任公司 | Power supply circuit of flexible direct-current transmission control panel |
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