CN108179472A - A kind of copper manganese gallium base single crystal alloy - Google Patents
A kind of copper manganese gallium base single crystal alloy Download PDFInfo
- Publication number
- CN108179472A CN108179472A CN201810022364.8A CN201810022364A CN108179472A CN 108179472 A CN108179472 A CN 108179472A CN 201810022364 A CN201810022364 A CN 201810022364A CN 108179472 A CN108179472 A CN 108179472A
- Authority
- CN
- China
- Prior art keywords
- alloy
- copper
- optional metal
- manganese
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
Abstract
The invention discloses a kind of copper manganese gallium base single crystal alloys, with the other super large grain structure of Centimeter Level, it is obtained after 700~820 DEG C of single phase region carries out the annealing of 1~30h by the cast alloy of polycrystalline structure, which is included following weight percentage components：Copper 60~67%, manganese 11~19%, gallium 15~24%, optional metal 0.2~5%.Phenomenon of phase separation occurs for quaternary alloy in the present invention, therefore in addition to L2 in alloy1‑(Cu2MnGa) outside phase, also there is the precipitated phase of the very tiny optional metal of richness, the presence of this kind of precipitated phase is that alloy is promoted to form super large crystal grain deciding factor in high-temperature heat treatment.
Description
Technical field
The invention belongs to metal single crystal technical field of alloy, and in particular to a kind of copper manganese gallium base single crystal alloy.
Background technology
Single crystal alloy usually has mechanics more more excellent than polycrystalline alloy and functional characteristic, therefore with wide application
Prospect.Metal material is all polycrystalline structure by traditional heat treatment process (melting, solidification, annealing), bulk single crystal alloy
Can only could often be obtained by some special equipment and technique, for example, directional solidification processes (1, Otsuka, K., Wayman,
C. M., Nakai, K., Sakamoto, H.＆Shimizu, K.Superelasticity effects and stress-
Induced martensitic transformations in Cu-Al-Ni alloys.Acta Metall.24,207-
226,1976；2nd, Saburi, T., Inada, Y., Nenno, S.＆Hori, N.Stress-induced martensitic
Transformations in Cu-Zn-Al and Cu-Zn-Ga alloys.J.Phys.43,633-638,1982；3、
Kato, H., Dutkiewicz, J.＆Miura, S.Superelasticity and shape memory effect in Cu-
23at.%Al-7at.%Mn alloy single crystals.Acta Metall.Mater.42,1359-1365,1994；
4th, Kato, H., Ozu, T., Hashimoto, S., Miura, S.Cyclic stress-strain response of
Superelastic Cu-Al-Mn alloy single crystals.Mater.Sci.Eng.A.264,245-253,
1999；5、The reorientation of the 2H martensite phase in Cu-Al-Mn shape memory
Single crystal alloy.Mater.Sci.Eng.A.481-482,526-531,2008).Some metal materials are passing through
Abnormal grain growth phenomenon can occur when macroscopic deformation after annealing or dynamic recrystallization, it is hereby achieved that monocrystal material, still
These methods be only capable of obtaining some simple shapes sheet material or wire rod (1, Goss, N.P.New development in
electrical strip steels characterized by fine grain structure approaching the
Properties of a single crystal. Trans.ASM 23,511-531,1934；2nd, Humphreys, F.J.＆
Hatherly, M.in Recrystallization and related annealing phenomena (Elsevier,
Oxford, ed.2,2004；3rd, Padilha, A.F., Plaut, R.L.＆ Rios, P.R.Annealing of cold-worked
Austenitic stainless steels.ISIJ Int.43,135-143,2003；4th, Ciulik, J.＆Taleff,
E.M.Dynamic abnormal grain growth：A new method to produce single
Crystal.Scr.Mater.61,895-898,2009), and process is more complicated, and technique is cumbersome, of high cost, and cannot obtain
The monocrystal material of bulk is obtained, therefore is unfavorable for practical application.
Omori et al. of Japan has found a kind of copper aluminium manganese ternary-alloy material, composition range for (mass ratio) 7.8%~
8.8% aluminium, 7.2%~14.3% manganese, surplus for copper (1, Omori, T.et al.Abnormal grain growth
Induced by cyclic heat treatment.Science 341,1500-1502,2013；2nd, Kusama, T., et
Al.Ultra-large single crystals by abnormal grain growth.Nat.Comm.8,354- (1-9),
2017).This kind of alloy material needs not move through macroscopic deformation, and super large grain structure can be obtained by tens of secondary thermal cycles,
Thermal Cycling is：Cast alloy carries out the heat treatment that homogenizes in 900 DEG C of single phase regions of high temperature first, then that alloy is slowly cold
But then (cooling velocity is 0.5 DEG C/min~3.3 DEG C/min) (heats up to 500 DEG C, 740 DEG C or 760 DEG C in slow heating
Speed is 10 DEG C/min) to 900 DEG C of isothermal treatment for short time, it is quenched after carrying out tens of secondary cycle heat treatments according to above-mentioned technique.But
Above-mentioned circle heat treatment not only takes but also technique is extremely cumbersome, very strict to temperature rate requirement, is unfavorable for reality
The production application on border.
Up to the present, the application of metal single crystal alloy and few, is concentrated mainly on the fields such as aerospace, this is mainly
Because of metal single crystal alloy, especially bulk single crystal alloy can just be obtained only by special installation and process materials, production
Efficiency is low and expensive.Therefore the metal alloy compositions that exploitation can obtain bulk monocrystalline by simple process have very
Important theory significance and boundless application prospect.
Invention content
It is an object of the invention to overcome prior art defect, a kind of copper manganese gallium base single crystal alloy is provided.
Technical scheme is as follows：
A kind of copper manganese gallium base single crystal alloy has the other super large grain structure of Centimeter Level, by the as cast condition of polycrystalline structure
Alloy obtains after 700~820 DEG C of single phase region carries out the annealing of 1~30h, which includes following weight percent
Component：Copper 60~67%, manganese 11~19%, gallium 15~24%, optional metal 0.2~5%,
Wherein, above-mentioned optional metal and copper is there are liquid phase two-phase laminated flow, its own with body-centered cubic structure or can with manganese,
Gallium forms body-centered cubic structure, and can make alloy that body-centred cubic phenomenon of phase separation occur.
In a preferred embodiment of the invention, the cast alloy by forming following weight percentage components：
Copper 60~67%, manganese 11~19%, gallium 15~24%, optional metal 0.2~5%.
In a preferred embodiment of the invention, the cast alloy is included following weight percentage components：Copper
62~65%, manganese 13~19%, gallium 18~21%, optional metal 0.2~2%.
It is further preferred that the cast alloy by forming following weight percentage components：Copper 62~65%, manganese 13~
19%, gallium 18~21%, optional metal 0.2~2%.
In a preferred embodiment of the invention, the optional metal be iron, molybdenum, tungsten, vanadium or chromium,
When optional metal is iron, weight percent of the optional metal in the cast alloy is 0.2~2%；
When optional metal is molybdenum, weight percent of the optional metal in the cast alloy is 0.2~1%；
When optional metal is tungsten, weight percent of the optional metal in the cast alloy is 0.2~0.5%；
When optional metal is vanadium, weight percent of the optional metal in the cast alloy is 0.2~1%；
When optional metal is chromium, weight percent of the optional metal in the cast alloy is 0.2~1%.
In a preferred embodiment of the invention, the temperature of the annealing is 700~750 DEG C.
In a preferred embodiment of the invention, the time of the annealing for 12~for 24 hours.
The beneficial effects of the invention are as follows：
1st, in the prior art, what Omori et al. was reported is copper aluminium manganese ternary alloy three-partalloy, and prior art invention is copper manganese gallium
Base quaternary alloy (the 4th optional metallic element is iron, molybdenum, tungsten, vanadium or chromium).The ternary alloy three-partalloy that Omori et al. is reported is unordered
Body-centered cubic (A2) structure, the present invention, which obtains single crystal alloy, has the Heusler-L2 of high-sequential1 (Cu2MnGa) structure.
Phenomenon of phase separation occurs for quaternary alloy in the present invention, therefore in addition to L2 in alloy1It, can also in the presence of the 4th kind very tiny of richness outside phase
The precipitated phase (its size is between more than ten nanometers to more than ten microns) of metallic element is selected, the presence of this kind of precipitated phase is to promote alloy
Super large crystal grain deciding factor is formed in high-temperature heat treatment.
2nd, in the prior art, the copper aluminium manganese ternary alloy three-partalloy that Omori et al. is reported has to pass through the thermal cycle of tens of times
Super large grain structure can be obtained, and it is only necessary to cast alloy for the quaternary copper manganese gallium-base alloy with phase separation of the present invention
Super large grain structure can be obtained by carrying out primary annealing.Therefore the copper manganese gallium base single crystal alloy preparation process of the present invention is extremely simple,
It is very easy to realize, there is extraordinary application prospect.
Description of the drawings
Fig. 1 has super large crystal grain by what is obtained after the cast alloy in the embodiment of the present invention 1 and 700 DEG C of heat treatments for 24 hours
Alloy photo.
Fig. 2 has super large crystal grain by what is obtained after the cast alloy in the embodiment of the present invention 2 and 700 DEG C of heat treatments for 24 hours
Alloy photo.
Fig. 3 is the optics metallographic of cast alloy and backscattered electron ingredient picture figure in the embodiment of the present invention 2.The as cast condition is closed
Gold is by L21-Cu2Fe nanometers of body-centered cubic phase compositions of MnGa phases and richness.
Specific embodiment
Technical scheme of the present invention is further detailed and described below by way of specific embodiment combination attached drawing.
All alloys all have there are one common heterogeneous microstructure in the present invention, i.e., all include by phenomenon of phase separation institute
Caused Heusler-L21(Cu2MnGa the tiny precipitated phase of)+the 4th kind of alloying element of richness.
Embodiment 1
By copper, manganese, gallium and ferrous metal raw material respectively by copper 63%, manganese 16%, gallium 19%, the mass percent of iron 2% matches
Material, then carries out melting by alloy, and cast alloy is obtained after alloy cooling.Then cast alloy is annealed at 700 DEG C
Processing, annealing time obtain the alloy material with super large grain structure, the results are shown in Figure 1, can be straight to quench afterwards for 24 hours
Obtain to obtain about 2.1 centimetres of bulk monocrystalline.
Embodiment 2
By copper, manganese, gallium and ferrous metal raw material respectively by copper 64%, manganese 13%, gallium 21%, the mass percent of iron 2% matches
Material, then carries out melting by alloy, and cast alloy as shown in Figures 2 and 3 is obtained after alloy cooling.Then by cast alloy
It is made annealing treatment at 700 DEG C, annealing time obtains the alloy material with super large grain structure, result to quench afterwards for 24 hours
As shown in Fig. 2, about 0.8 centimetre of bulk monocrystalline can be directly obtained.
Embodiment 3
By copper, manganese, gallium and molybdenum raw material respectively by copper 62%, manganese 17%, gallium 20%, the mass percent of molybdenum 1% matches
Material, then carries out melting by alloy, and cast alloy is obtained after alloy cooling.Then cast alloy is annealed at 700 DEG C
Processing, annealing time quench after being 12h, can directly obtain the bulk monocrystalline of about Centimeter Level.
Embodiment 4
By copper, manganese, gallium and molybdenum raw material respectively by copper 62.8%, manganese 19%, gallium 18%, the quality percentage of molybdenum 0.2%
Than dispensing, alloy is then subjected to melting, cast alloy is obtained after alloy cooling.Then by cast alloy in 700 DEG C of progress
Annealing, annealing time quench after being 12h, can directly obtain the bulk monocrystalline of about Centimeter Level.
Embodiment 5
By copper, manganese, gallium and tungsten raw metal respectively by copper 62.5%, manganese 18%, gallium 19%, the quality percentage of tungsten 0.5%
Than dispensing, alloy is then subjected to melting, cast alloy is obtained after alloy cooling.Then by cast alloy in 750 DEG C of progress
Annealing, annealing time quench after being 12h, can directly obtain the bulk monocrystalline of about Centimeter Level.
Embodiment 6
By copper, manganese, gallium and vanadium metal raw material respectively by copper 65%, manganese 16%, gallium 18%, the mass percent of vanadium 1% matches
Material, then carries out melting by alloy, and cast alloy is obtained after alloy cooling.Then cast alloy is annealed at 700 DEG C
Processing, annealing time can directly obtain the bulk monocrystalline of about Centimeter Level to quench afterwards for 24 hours.
Embodiment 7
By copper, manganese, gallium and chromium raw metal respectively by copper 64%, manganese 16%, gallium 19%, the mass percent of chromium 1% matches
Material, then carries out melting by alloy, and cast alloy is obtained after alloy cooling.Then cast alloy is annealed at 700 DEG C
Processing, annealing time can directly obtain the bulk monocrystalline of about Centimeter Level to quench afterwards for 24 hours.
The foregoing is only a preferred embodiment of the present invention, therefore cannot limit the range that the present invention is implemented according to this, i.e.,
According to the equivalent changes and modifications that the scope of the claims of the present invention and description are made, all should still belong in the range of the present invention covers.
Claims (7)
1. a kind of copper manganese gallium base single crystal alloy, it is characterised in that：With the other super large grain structure of Centimeter Level, by polycrystalline knot
The cast alloy of structure obtains after 700~820 DEG C of single phase region carries out the annealing of 1~30h, which includes following weight
Measure the component of percentage：Copper 60~67%, manganese 11~19%, gallium 15~24%, optional metal 0.2~5%,
Wherein, above-mentioned optional metal and copper is there are liquid phase two-phase laminated flow, its own is with body-centered cubic structure or can be with manganese, gallium shape
Into body-centered cubic structure, and it can make alloy that body-centred cubic phenomenon of phase separation occur.
2. a kind of copper manganese gallium base single crystal alloy as described in claim 1, it is characterised in that：The cast alloy is by as follows
The component composition of weight percent：Copper 60~67%, manganese 11~19%, gallium 15~24%, optional metal 0.2~5%.
3. a kind of copper manganese gallium base single crystal alloy as described in claim 1, it is characterised in that：The cast alloy is included such as
The component of lower weight percent：Copper 62~65%, manganese 13~19%, gallium 18~21%, optional metal 0.2~2%.
4. a kind of copper manganese gallium base single crystal alloy as claimed in claim 3, it is characterised in that：The cast alloy is by as follows
The component composition of weight percent：Copper 62~65%, manganese 13~19%, gallium 18~21%, optional metal 0.2~2%.
5. a kind of copper manganese gallium base single crystal alloy as described in any claim in Claims 1-4, it is characterised in that：
The optional metal be iron, molybdenum, tungsten, vanadium or chromium,
When optional metal is iron, weight percent of the optional metal in the cast alloy is 0.2~2%；
When optional metal is molybdenum, weight percent of the optional metal in the cast alloy is 0.2~1%；
When optional metal is tungsten, weight percent of the optional metal in the cast alloy is 0.2~0.5%；
When optional metal is vanadium, weight percent of the optional metal in the cast alloy is 0.2~1%；
When optional metal is chromium, weight percent of the optional metal in the cast alloy is 0.2~1%.
6. a kind of copper manganese gallium base single crystal alloy as described in any claim in Claims 1-4, it is characterised in that：
The temperature of the annealing is 700~750 DEG C.
7. a kind of copper manganese gallium base single crystal alloy as described in any claim in Claims 1-4, it is characterised in that：
The time of the annealing for 12~for 24 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810022364.8A CN108179472B (en) | 2018-01-10 | 2018-01-10 | A kind of copper manganese gallium base single crystal alloy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810022364.8A CN108179472B (en) | 2018-01-10 | 2018-01-10 | A kind of copper manganese gallium base single crystal alloy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108179472A true CN108179472A (en) | 2018-06-19 |
| CN108179472B CN108179472B (en) | 2019-07-23 |
Family
ID=62550099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810022364.8A Active CN108179472B (en) | 2018-01-10 | 2018-01-10 | A kind of copper manganese gallium base single crystal alloy |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108179472B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109593986A (en) * | 2018-12-24 | 2019-04-09 | 厦门大学 | A kind of copper zinc-aluminium iron monocrystal alloy material |
| CN111876631A (en) * | 2020-08-04 | 2020-11-03 | 厦门大学深圳研究院 | Copper-zinc-aluminum-based single crystal alloy and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04187732A (en) * | 1990-11-21 | 1992-07-06 | Furukawa Electric Co Ltd:The | High tensile strength copper alloy having high workability |
| CN102124130A (en) * | 2008-07-09 | 2011-07-13 | 麻省理工学院 | Superelastic alloy structural geometry for ultrahigh mechanical damping |
| EP2977140A1 (en) * | 2014-07-22 | 2016-01-27 | Umicore AG & Co. KG | Annular disc |
-
2018
- 2018-01-10 CN CN201810022364.8A patent/CN108179472B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04187732A (en) * | 1990-11-21 | 1992-07-06 | Furukawa Electric Co Ltd:The | High tensile strength copper alloy having high workability |
| CN102124130A (en) * | 2008-07-09 | 2011-07-13 | 麻省理工学院 | Superelastic alloy structural geometry for ultrahigh mechanical damping |
| EP2977140A1 (en) * | 2014-07-22 | 2016-01-27 | Umicore AG & Co. KG | Annular disc |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109593986A (en) * | 2018-12-24 | 2019-04-09 | 厦门大学 | A kind of copper zinc-aluminium iron monocrystal alloy material |
| CN109593986B (en) * | 2018-12-24 | 2020-03-06 | 厦门大学 | Copper-zinc-aluminum-iron single crystal alloy material |
| CN111876631A (en) * | 2020-08-04 | 2020-11-03 | 厦门大学深圳研究院 | Copper-zinc-aluminum-based single crystal alloy and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108179472B (en) | 2019-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108179471B (en) | A kind of ferrimanganic aluminium base single crystal alloy | |
| CN107250416B (en) | The manufacturing method of Ni base superalloy | |
| CN102392189B (en) | High-Cr ferrite stainless steel and manufacturing method thereof | |
| CN108277535B (en) | A kind of copper aluminium manganese base single crystal alloy | |
| US11236440B2 (en) | Copper-zinc-aluminum-iron single crystal alloy material | |
| Fu et al. | Effects of grain orientation and precipitates on the superelasticity in directionally solidified FeNiCoAlTaB shape memory alloy | |
| CN115141984B (en) | High-entropy austenitic stainless steel and preparation method thereof | |
| CN108026624A (en) | Corrosion-resistant and cracking resistance high Mn austenitic steel containing passivation element | |
| Yang et al. | Excellent superelasticity and fatigue resistance of Cu-Al-Mn-W shape memory single crystal obtained only through annealing polycrystalline cast alloy | |
| CN113637885B (en) | Multicomponent FeNiCoAlTiZr super elastic alloy and preparation method thereof | |
| CA2928605A1 (en) | Ultra-low cobalt iron-cobalt magnetic alloys | |
| CN108179472B (en) | A kind of copper manganese gallium base single crystal alloy | |
| Yang et al. | Low-cost Cu-based shape memory single crystals obtained by abnormal grain growth showing excellent superelasticity | |
| CN105755345B (en) | A kind of rareearth magnetic material with field controllable deformation and preparation method thereof | |
| Yang et al. | Abnormal grain growth in annealing cast Cu–Al–Mn–V alloys and their superelasticity | |
| Huang et al. | Effect of rare-earth addition on the shape memory behavior of a FeMnSiCr alloy | |
| Yang et al. | Development of Fe-Mn-Si-Cr-Ni shape memory alloy with ultrahigh mechanical properties and large recovery strain by laser powder bed fusion | |
| Wen et al. | A novel training-free cast Fe–18Mn–5.5 Si–9.5 Cr–4Ni shape memory alloy with lathy delta ferrite | |
| Fang et al. | Influence of cold rolling direction on texture, inhibitor and magnetic properties in strip-cast grain-oriented 3% silicon steel | |
| CN113930693B (en) | Fe-Mn-Al-Ni-Cu super-elastic alloy and preparation method thereof | |
| JP2015200008A (en) | austenitic stainless steel | |
| Zhang et al. | Directional recrystallization and microstructures of an Fe–6.5 wt% Si alloy | |
| Liu et al. | Solidification interface transformation and solute redistribution of FeCrAl stainless steel | |
| Zhang et al. | Annealing effects on structure and mechanical properties of CoCrFeNiTiAlx high-entropy alloys | |
| Ou et al. | Novel eutectic high-entropy alloy surfacing of flower-pot structure with outstanding wear resistance manufactured by laser cladding |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |