CN108172653A - A kind of PVDF thin film of high reflectance and preparation method thereof, application - Google Patents
A kind of PVDF thin film of high reflectance and preparation method thereof, application Download PDFInfo
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- CN108172653A CN108172653A CN201810052709.4A CN201810052709A CN108172653A CN 108172653 A CN108172653 A CN 108172653A CN 201810052709 A CN201810052709 A CN 201810052709A CN 108172653 A CN108172653 A CN 108172653A
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- Prior art keywords
- thin film
- pvdf
- pvdf thin
- high reflectance
- tetramethyl
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- 239000002033 PVDF binder Substances 0.000 title claims abstract description 119
- 229920002981 polyvinylidene fluoride Polymers 0.000 title claims abstract description 119
- 239000010409 thin film Substances 0.000 title claims abstract description 90
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 42
- 239000004411 aluminium Substances 0.000 claims abstract description 40
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 38
- 238000001704 evaporation Methods 0.000 claims description 28
- 230000008020 evaporation Effects 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 21
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical group OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 claims description 16
- 238000005269 aluminizing Methods 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000004698 Polyethylene Substances 0.000 claims description 13
- 150000002148 esters Chemical class 0.000 claims description 13
- 239000003292 glue Substances 0.000 claims description 12
- 229920000642 polymer Polymers 0.000 claims description 12
- 229920002635 polyurethane Polymers 0.000 claims description 12
- 239000004814 polyurethane Substances 0.000 claims description 12
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 12
- -1 β-ethyl Chemical group 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000003963 antioxidant agent Substances 0.000 claims description 9
- 230000003078 antioxidant effect Effects 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 9
- 229920000305 Nylon 6,10 Polymers 0.000 claims description 8
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 8
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 7
- 239000012964 benzotriazole Substances 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000000047 product Substances 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 229920000573 polyethylene Polymers 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 239000001384 succinic acid Substances 0.000 claims description 6
- 239000004408 titanium dioxide Substances 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- 238000003851 corona treatment Methods 0.000 claims description 5
- 229920000098 polyolefin Polymers 0.000 claims description 5
- 229920002689 polyvinyl acetate Polymers 0.000 claims description 5
- 239000011118 polyvinyl acetate Substances 0.000 claims description 5
- OUWPEHOSUWXUFV-UHFFFAOYSA-N 4-(benzotriazol-2-yl)-3-methylphenol Chemical group CC1=CC(O)=CC=C1N1N=C2C=CC=CC2=N1 OUWPEHOSUWXUFV-UHFFFAOYSA-N 0.000 claims description 4
- 239000012965 benzophenone Substances 0.000 claims description 4
- 125000004573 morpholin-4-yl group Chemical group N1(CCOCC1)* 0.000 claims description 4
- 150000008301 phosphite esters Chemical class 0.000 claims description 4
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 claims description 4
- NQRYJNQNLNOLGT-UHFFFAOYSA-N tetrahydropyridine hydrochloride Natural products C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 claims description 4
- 238000007664 blowing Methods 0.000 claims description 3
- 239000011265 semifinished product Substances 0.000 claims description 3
- 238000010345 tape casting Methods 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 2
- LLLVZDVNHNWSDS-UHFFFAOYSA-N 4-methylidene-3,5-dioxabicyclo[5.2.2]undeca-1(9),7,10-triene-2,6-dione Chemical compound C1(C2=CC=C(C(=O)OC(=C)O1)C=C2)=O LLLVZDVNHNWSDS-UHFFFAOYSA-N 0.000 claims 1
- BOJPPRDDSMOJJZ-UHFFFAOYSA-N ClC1=NC(=NC(=N1)C(C)(C)CC(C)(C)C)N Chemical class ClC1=NC(=NC(=N1)C(C)(C)CC(C)(C)C)N BOJPPRDDSMOJJZ-UHFFFAOYSA-N 0.000 claims 1
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- 150000003851 azoles Chemical class 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- 238000002310 reflectometry Methods 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001301 oxygen Substances 0.000 abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 16
- 239000005020 polyethylene terephthalate Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 235000010215 titanium dioxide Nutrition 0.000 description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 230000035699 permeability Effects 0.000 description 6
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 4
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 4
- HMADMAFEFZHZLM-UHFFFAOYSA-N 2,4-dichloro-6-(2,4,4-trimethylpentan-2-yl)-2h-1,3,5-triazin-1-amine Chemical class CC(C)(C)CC(C)(C)C1=NC(Cl)=NC(Cl)N1N HMADMAFEFZHZLM-UHFFFAOYSA-N 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
- B32B37/1284—Application of adhesive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
A kind of PVDF thin film of high reflectance of the present invention and preparation method thereof, using belonging to photovoltaic backboard application field, and in particular to a kind of PVDF thin film of high reflectance and the photovoltaic back of application and preparation method thereof.A kind of PVDF thin film of high reflectance, the PVDF thin film internal layer plate last layer aluminium layer by way of vacuum evaporation, and the thickness of PVDF layers is 10 60 microns, and the thickness of the aluminium coated is 30 60 nanometers.Preparation method includes preparing PVDF layers and prepares aluminium coated.The reflectivity of PVDF thin film can be improved to more than 90%；Effectively barrier water vapour and oxygen protect the service life of backboard middle layer of PET, the service life of photovoltaic module are made to reach 25 years.
Description
Technical field
A kind of PVDF thin film of high reflectance of the present invention and preparation method thereof, using belonging to photovoltaic backboard application neck
Domain, and in particular to a kind of PVDF thin film of high reflectance and the photovoltaic back of application and preparation method thereof.
Background technology
Photovoltaic back is located at the outermost layer of module backside, for keep out outdoor adverse circumstances protect photovoltaic cell component not by
The erosion of steam, oxygen, while require photovoltaic back that there is high-low temperature resistant, good insulating properties, ageing-resistant and corrosion resistance.
Photovoltaic back outer layer protection layer material is generally fluorine material, and PVF and PVDF are most common two kinds of fluorine materials, due to PVDF
More fluorine atoms on molecular structure, so it is finer and close than PVF, more preferable more resistant to time, barrier property.
Since the light utilization efficiency of photovoltaic module is low, it is very to provide a kind of high reflectance photovoltaic back with PVDF thin film
It is necessary to.
Chinese Patent Application No. 201610353453.1 discloses single side frosted high reflection solar energy backboard PVDF thin film
And preparation method thereof.The PVDF thin film includes outer layers compound successively, middle layer, the internal layer and reflective that four layers of melting co-extrusion are formed
Layer, and the material of its outer layer and internal layer is PVDF, and the material of reflective layer is acrylic acid-grafted Kynoar, grafting rate
It is low, and its actual reflectance is not high, complex process is of high cost.The extensive another raising PVDF thin film of comparison at present
The method of reflectivity is exactly more addition titanium dioxides in film preparation formula, but this method has influence to the weatherability of film,
And the cost of titanium white powder raw material is higher, is unfavorable for photovoltaic par online.
Invention content
A kind of PVDF thin film of high reflectance and preparation method thereof is provided the present invention seeks to part against the above deficiency, is answered
With being photovoltaic back PVDF thin film of a kind of high reflectance and preparation method thereof, which can improve sunlight
Reflectivity, and then improve cell piece and generating efficiency is improved to the utilization rate of sunlight.
A kind of PVDF thin film of high reflectance and preparation method thereof, using being that following technical scheme is taken to realize：
A kind of PVDF thin film of high reflectance, have two-layer structure, basal layer be PVDF layer, with basal layer be connected directly be plate
Aluminium layer, the PVDF thin film internal layer plate last layer aluminium coated, the thickness of the PVDF thin film layer by way of vacuum evaporation
It is 10-60 microns to spend, and the thickness of the aluminium coated is 30-60 nanometers.
A kind of preparation method of the PVDF thin film of high reflectance, includes the following steps：
（1）PVDF layers are prepared, wherein PVDF layers includes 50-80 parts by weight PVDF, 5-20 parts by weight titanium dioxide, 1-10 parts by weight
PMMA, 0.05-2 parts by weight antioxidant and 0.05-2 parts by weight anti ultraviolet agents；After more than raw material is carried out mixed at high speed, using double
Screw extruder is granulated, then prepares film semi-finished product with blowing or the tape casting, is made after being cut finally by cutting machine
Photovoltaic back PVDF thin film；
（2）Aluminium coated is prepared, in step（1）Obtained PVDF thin film surface carries out sided corona treatment so that film surface tension reaches
To 38 × 10-5N-40×10-5N, then wound and be placed in vacuum chamber, vacuum chamber is closed, until the model of vacuum degree
System is contained 10-6-10-2Evaporation source is warming up to 1400 DEG C -1500 DEG C, then the aluminum metal silk that purity is 99.9% is continuous by pa
It send to evaporation source high-temperature region, control aluminium gas molecule in space number evaporation rate is 1.0 × 1017g/cm*s-2.0×1017G/cm*s,
The movement speed of PVDF thin film is 1/2 times of aluminium gas molecule in space number evaporation rate, opens cooling source, aluminium wire is made to connect in high-temperature region
Continuous fusing, evaporation, so as to form one layer of bright aluminium coated on mobile PVDF thin film surface, after cooling finished product,
Finished product can obtain a kind of PVDF thin film of high reflectance after being cut by specification.
The antioxidant is decanedioic acid two (2,2,6,6- tetramethyl -4- piperidyls) ester, three (1,2,2,6,6- of phosphorous acid
Pentamethyl -4- piperidyls) ester, poly- [(1- (β-ethyl) -2,2,6,6- tetramethyl -4- piperidyls) succinic acid], it is poly- [6- [(1,
1,3,3- tetramethyl butyls)-subunit] -1,3,5- triazine -2,4- diyls], [2- (2,2,6,6- tetramethyl -4- piperidyls)-secondary
Amino]-hexa-methylene-[4- (2,2,6,6- tetramethyl -4- piperidyls)-secondary amino] in one or more combinations.
The anti ultraviolet agent for 2- (2 '-methyl -4 '-hydroxy phenyl) benzotriazole, it is double-(2- methoxyl group -4- hydroxyls -
5- benzoylphenyls) methane, 2- (2 '-hydroxy-5-methyl base phenyl) benzotriazole, 2- (2 '-hydroxy-5-methyl base phenyl) -5-
Butyl's ester benzotriazole, 2- hydroxyl -4- alkoxy benzophenones, 3,5- di-t-butyl -4- hydroxy-benzoic acid cetyls
Double -2,2,6,6- tetramethyl piperidines the alcohol esters of ester, three (1,2,2,6,6- pentamethyl -4- piperidyls) phosphite esters, decanedioic acid, fourth two
Polymer, the N of acid and 4- hydroxyl -2,2,6,6- tetramethyl -1- piperidine alcohols, N '-bis- (2,2,6,6- tetramethyl -4- piperidyls) -
Polymer, the N of 1,6- hexamethylene diamine and 2,4- bis- chloro- 6- (1,1,3,3- tetramethyl butyl) amino -1,3,5-triazines, N '-bis- (2,
2,6,6- tetramethyl -4- piperidyls) -1,6- hexamethylene diamines and 2,4- bis- chloro- 6- (4- morpholinyls) -1,3,5-triazines polymer in
One or more combinations.
A kind of PVDF thin film of high reflectance is applied in photovoltaic back is prepared.
A kind of PVDF thin film of high reflectance application process in photovoltaic back is prepared, it is characterised in that：By described one
Polyethylene terephthalate of the level of aluminizing with coating polyurethane glue in the PVDF thin film of kind high reflectance（PET）Into
The first face of row is compound, and the non-face of aluminizing of PVDF thin film is placed on outer layer, after the another side of PET coats polyurethane glue, directly and polyene
Hydrocarbon film carries out the compound of the second face, and photovoltaic back, above-mentioned photovoltaic back layer can be obtained after compound good sample is stood curing
During pressure, the non-face of aluminizing of the first face composite surface PVDF thin film is laminated with polyethylene-polyvinyl acetate copolymer (EVA),
Outer layer of the second face composite surface as photovoltaic back.
Further, the polyolefin film is Kynoar（PVDF）Or modified polyethylene（PE）Film.
Compared with prior art, beneficial effects of the present invention are：1）The reflectivity of conventional PVDF thin film is generally in 50%-
60% or so, by the way that the reflectivity of PVDF thin film after its surface is aluminized, can be improved to more than 90%；2）Conventional PVDF thin film
Water vapour permeability is 40-50g/m2*day, and the aluminize water vapour permeability in face of PVDF thin film is 1.5-3g/m2*day, effectively
Water vapour and oxygen are obstructed, the service life of backboard middle layer of PET is protected, the service life of photovoltaic module is made to reach 25 years.
Description of the drawings
Below with reference to attached drawing, the invention will be further described：
Fig. 1 is a kind of PVDF thin film structure diagram of high reflectance;
Fig. 2 is the structure diagram that high reflectance PVDF thin film is combined into backboard.
Reference numeral：1、PVDF（Film）Layer；2nd, it aluminizes（Film）Layer；3、PET；4th, polyolefin film.
Specific embodiment
With reference to embodiment and attached drawing, the specific embodiment of the present invention is further described.Following embodiment
It is only used for more clearly illustrating technical scheme of the present invention, and is not intended to limit the protection scope of the present invention and limits the scope of the invention.
A kind of PVDF thin film of high reflectance has two-layer structure, and basal layer is PVDF layers 1, is connected directly with basal layer
It is aluminium coated 2, the PVDF thin film internal layer plates last layer aluminium coated 2 by way of vacuum evaporation, PVDF layers 1
Thickness is 10-60 microns, and the thickness of the aluminium coated 2 is 30-60 nanometers.
A kind of preparation method of the PVDF thin film of high reflectance, includes the following steps：
（1）PVDF layers 1 are prepared, wherein PVDF layers 1 include 50-80 parts by weight PVDF, 5-20 parts by weight titanium dioxide, 1-10 parts by weight
PMMA, 0.05-2 parts by weight antioxidant and 0.05-2 parts by weight anti ultraviolet agents；After more than raw material is carried out mixed at high speed, using double
Screw extruder is granulated, then prepares film semi-finished product with blowing or the tape casting, is made after being cut finally by cutting machine
Photovoltaic back PVDF thin film；
（2）Aluminium coated 2 is prepared, in step（1）Obtained PVDF thin film surface carries out sided corona treatment so that film surface tension reaches
To 38 × 10-5N-40×10-5N, then wound and be placed in vacuum chamber, vacuum chamber is closed, until the model of vacuum degree
System is contained 10-6-10-2Evaporation source is warming up to 1400 DEG C -1500 DEG C, then the aluminum metal silk that purity is 99.9% is continuous by pa
It send to evaporation source high-temperature region, control aluminium gas molecule in space number evaporation rate is 1.0 × 1017g/cm*s-2.0×1017G/cm*s,
The movement speed of PVDF thin film is 1/2 times of aluminium gas molecule in space number evaporation rate, opens cooling source, aluminium wire is made to connect in high-temperature region
Continuous fusing, evaporation, so as to form one layer of bright aluminium coated 2 on mobile PVDF thin film surface, after cooling finished product,
Finished product can obtain a kind of PVDF thin film of high reflectance after being cut by specification.
The antioxidant is decanedioic acid two (2,2,6,6- tetramethyl -4- piperidyls) ester, three (1,2,2,6,6- of phosphorous acid
Pentamethyl -4- piperidyls) ester, poly- [(1- (β-ethyl) -2,2,6,6- tetramethyl -4- piperidyls) succinic acid], it is poly- [6- [(1,
1,3,3- tetramethyl butyls)-subunit] -1,3,5- triazine -2,4- diyls], [2- (2,2,6,6- tetramethyl -4- piperidyls)-secondary
Amino]-hexa-methylene-[4- (2,2,6,6- tetramethyl -4- piperidyls)-secondary amino] in one or more combinations.
The anti ultraviolet agent for 2- (2 '-methyl -4 '-hydroxy phenyl) benzotriazole, it is double-(2- methoxyl group -4- hydroxyls -
5- benzoylphenyls) methane, 2- (2 '-hydroxy-5-methyl base phenyl) benzotriazole, 2- (2 '-hydroxy-5-methyl base phenyl) -5-
Butyl's ester benzotriazole, 2- hydroxyl -4- alkoxy benzophenones, 3,5- di-t-butyl -4- hydroxy-benzoic acid cetyls
Double -2,2,6,6- tetramethyl piperidines the alcohol esters of ester, three (1,2,2,6,6- pentamethyl -4- piperidyls) phosphite esters, decanedioic acid, fourth two
Polymer, the N of acid and 4- hydroxyl -2,2,6,6- tetramethyl -1- piperidine alcohols, N '-bis- (2,2,6,6- tetramethyl -4- piperidyls) -
Polymer, the N of 1,6- hexamethylene diamine and 2,4- bis- chloro- 6- (1,1,3,3- tetramethyl butyl) amino -1,3,5-triazines, N '-bis- (2,
2,6,6- tetramethyl -4- piperidyls) -1,6- hexamethylene diamines and 2,4- bis- chloro- 6- (4- morpholinyls) -1,3,5-triazines polymer in
One or more combinations.
A kind of PVDF thin film of high reflectance is applied in photovoltaic back is prepared.
A kind of PVDF thin film of high reflectance application process in photovoltaic back is prepared, it is characterised in that：By described one
Polyethylene terephthalate of 2 face of aluminium coated with coating polyurethane glue in the PVDF thin film of kind high reflectance（PET）3
It is compound to carry out the first face, the non-face of aluminizing of PVDF thin film is placed on outer layer, after the another side of PET3 coats polyurethane glue, directly with it is poly-
Alkene film 4 carries out the compound of the second face, and photovoltaic back, above-mentioned photovoltaic back can be obtained after compound good sample is stood curing
During lamination, the non-face of aluminizing of the first face composite surface PVDF thin film is subjected to layer with polyethylene-polyvinyl acetate copolymer (EVA)
Pressure, outer layer of the second face composite surface as photovoltaic back.
Further, the polyolefin film 4 is Kynoar（PVDF）Or modified polyethylene（PE）Film.
Embodiment 1
A kind of preparation method of the photovoltaic back PVDF thin film of high reflectance includes：（1）Weigh 50 parts by weight PVDF raw materials,
The titanium dioxide of 10 parts by weight, the PMMA of 5 parts by weight, the antioxidant of 0.05 parts by weight and 0.05 parts by weight anti ultraviolet agent；By more than
It is granulated after material mixing by double screw extruder, the particle created dries 2h, then blow via blown film unit by drying machine
Film is expanded into, the PVDF that thickness is 20um is obtained after cutting machine is cut（Film）Layer 1；（2）Step（1）Cut obtained PVDF
（Film）1 surface of layer carries out sided corona treatment so that film surface tension reaches 38 × 10-5N, then wound and be placed on vacuum chamber
It is interior, vacuum chamber is closed, until the scope control of vacuum degree is 10-6Evaporation source is warming up to 1400 DEG C, is purity by pa
99.9% aluminum metal silk is continuously sent to evaporation source high-temperature region, and control aluminium gas molecule in space number evaporation rate is 1.0 × 1017G/cm*s,
The movement speed of PVDF thin film is 1/3 times of aluminium gas molecule in space number evaporation rate, opens cooling source, aluminium wire is made to connect in high-temperature region
Continuous fusing, evaporation, so as to form one layer of bright aluminium coated 2, the aluminium coated 2 obtained at this time on mobile PVDF thin film surface
Thickness is 30 nanometers；（3）By step（2）In aluminizing in obtained high reflectance PVDF thin film face and coat polyurethane glue
Polyethylene terephthalate（PET）3 the first faces of progress are compound, PVDF（Film）Layer 1 is placed on outer layer, and the another side of PET applies
After good polyurethane glue, directly and polyethylene（PE）Film carries out the compound of the second face, after compound good sample is stood curing
Photovoltaic back can be obtained, when above-mentioned photovoltaic back is laminated, by non-face and the polyethylene-poly-vinegar of aluminizing of the first face composite surface PVDF thin film
Vinyl acetate copolymer (EVA) is laminated, outer layer of the second face composite surface as photovoltaic back.
The reflectance test of backboard is carried out using the ultraviolet-visible spectrophotometer for measuring wave-length coverage 200-1100nm,
Wherein light is irradiated since PE pellicular fronts, and obtained reflectivity values are 91.4%, using GB/T 21529-2008 electrolysis
The water vapour permeability of PVDF thin film is tested, obtained numerical value is 2.3g/m2*day。
Embodiment 2
A kind of preparation method of the photovoltaic back PVDF thin film of high reflectance includes：（1）Weigh 80 parts by weight PVDF raw materials,
The titanium dioxide of 20 parts by weight, the PMMA of 10 parts by weight, the antioxidant of 2 parts by weight and 2 parts by weight anti ultraviolet agents；More than material is mixed
It being granulated after conjunction by double screw extruder, the particle created dries 2h, then be blown into film via blown film unit by drying machine,
The PVDF thin film 1 that thickness is 20um is obtained after cutting machine is cut；
（2）Step（1）It cuts obtained 1 surface of PVDF thin film and carries out sided corona treatment so that film surface tension reaches 40 × 10-5NN, then wound and be placed in vacuum chamber, vacuum chamber is closed, until the scope control of vacuum degree is 10-2Pa, will
Evaporation source is warming up to 1450 DEG C, and the aluminum metal silk that purity is 99.9% is continuously sent to evaporation source high-temperature region, controls aluminium gas molecule in space
Number evaporation rate is 2.0 × 1017G/cm*s, the movement speed of PVDF thin film are 1/2 times of aluminium gas molecule in space number evaporation rate, are opened
Logical cooling source, makes aluminium wire continuously melt, evaporate in high-temperature region, so as to form one layer of light on mobile 1 surface of PVDF thin film
Bright aluminium coated 2, the aluminum layer thickness obtained at this time are 40 nanometers；（3）By step（2）In obtained high reflectance PVDF thin film
In aluminize and level and coat the polyethylene terephthalate of polyurethane glue（PET）3 the first faces of progress are compound, and PVDF is thin
The non-face of aluminizing of film is placed on outer layer, after the another side of PET coats polyurethane glue, directly and polyethylene（PE）Film carries out the second face
It is compound, compound good sample, which is stood, can obtain photovoltaic back after curing, during above-mentioned photovoltaic back lamination, the first face is compound
PVDF thin film non-face of aluminizing in face is laminated with polyethylene-polyvinyl acetate copolymer (EVA), and the second face composite surface is as light
Lie prostrate the outer layer of backboard.
The reflectance test of backboard is carried out using the ultraviolet-visible spectrophotometer for measuring wave-length coverage 200-1100nm,
Wherein light is irradiated since the second compound face, and obtained reflectivity values are 93.7%, using GB/T 21529-2008 electricity
Solution tests the water vapour permeability of PVDF thin film, and obtained numerical value is 1.8g/m2*day。
Embodiment 3
A kind of preparation method of the photovoltaic back PVDF thin film of high reflectance includes：（1）Weigh 65 parts by weight PVDF raw materials,
The titanium dioxide of 5 parts by weight, the PMMA of 1 parts by weight, the antioxidant of 1 parts by weight and 1 parts by weight anti ultraviolet agent；More than material is mixed
It is granulated afterwards by double screw extruder, the particle created dries 2h, then be blown into film via blown film unit by drying machine, passes through
The PVDF thin film 1 that thickness is 20um is obtained after cutting machine cutting；（2）Step（1）It cuts obtained PVDF thin film surface and carries out electricity
Dizzy processing so that film surface tension reaches 40 × 10-5NN, then wound and be placed in vacuum chamber, it closes vacuum chamber and takes out very
Sky, until the scope control of vacuum degree is 10-2Evaporation source is warming up to 1500 DEG C by pa, and the aluminum metal silk that purity is 99.9% is connected
Continuous to send to evaporation source high-temperature region, control aluminium gas molecule in space number evaporation rate is 2.0 × 1017G/cm*s, the mobile speed of PVDF thin film
3/4 times for aluminium gas molecule in space number evaporation rate is spent, cooling source is opened, aluminium wire is made continuously to melt, evaporate in high-temperature region, from
And one layer of bright aluminium coated 2 is formed on mobile 1 surface of PVDF thin film, the aluminum layer thickness obtained at this time is 60 nanometers；（3）It will
Step（2）In aluminizing in obtained high reflectance PVDF thin film face and coat the polyethylene terephthalate of polyurethane glue
Ester（PET）It is compound to carry out the first face, the non-face of aluminizing of PVDF thin film is placed on outer layer, after the another side of PET coats polyurethane glue, directly
It connects and polyethylene（PE）Film carries out the compound of the second face, and photovoltaic back can be obtained after compound good sample is stood curing, on
When stating photovoltaic back lamination, by non-face and the polyethylene-polyvinyl acetate copolymer of aluminizing of the first face composite surface PVDF thin film
(EVA) it is laminated, outer layer of the second face composite surface as photovoltaic back.
The reflectance test of film is carried out using the ultraviolet-visible spectrophotometer for measuring wave-length coverage 200-1100nm,
Obtained numerical value is 93.9%, using the water vapour permeability of GB/T 21529-2008 electrolysis test PVDF thin film, is obtained
Numerical value is 1.5g/m2*day。
In above example 1,2,3：
The antioxidant is decanedioic acid two (2,2,6,6- tetramethyl -4- piperidyls) ester, (five first of 1,2,2,6,6- of phosphorous acid three
Base -4- piperidyls) ester, poly- [(1- (β-ethyl) -2,2,6,6- tetramethyl -4- piperidyls) succinic acid], it is poly- [6- [(1,1,3,
3- tetramethyl butyls)-subunit] -1,3,5- triazine -2,4- diyls], [2- (2,2,6,6- tetramethyl -4- piperidyls)-secondary ammonia
Base]-hexa-methylene-[4- (2,2,6,6- tetramethyl -4- piperidyls)-secondary amino] in one or more combinations；
The anti ultraviolet agent is 2- (2 '-methyl -4 '-hydroxy phenyl) benzotriazole, double-(2- methoxyl group -4- hydroxyl -5- benzene
Fonnylphenyl) methane, 2- (2 '-hydroxy-5-methyl base phenyl) benzotriazole, 2- (2 '-hydroxy-5-methyl base phenyl) -5- carboxylic acids
Butyl ester benzotriazole, 2- hydroxyl -4- alkoxy benzophenones, 3,5- di-t-butyl -4- hydroxy-benzoic acids cetyl ester,
Double -2,2,6,6- tetramethyl piperidines the alcohol esters of three (1,2,2,6,6- pentamethyl -4- piperidyls) phosphite esters, decanedioic acid, succinic acid
With polymer, the N of 4- hydroxyl -2,2,6,6- tetramethyl -1- piperidine alcohols, N '-bis- (2,2,6,6- tetramethyl -4- piperidyls) -1,
Polymer, the N of 6- hexamethylene diamines and 2,4- bis- chloro- 6- (1,1,3,3- tetramethyl butyl) amino -1,3,5-triazines, N '-bis- (2,2,
6,6- tetramethyl -4- piperidyls) -1,6- hexamethylene diamines and 2,4- bis- chloro- 6- (4- morpholinyls) -1,3,5-triazines polymer in
One or more combinations.
Comparative example is carried out with conventional products：
Conventional PVDF thin film is directly obtained, and its performance is tested by step 1 in embodiment 1, using measurement wavelength model
The ultraviolet-visible spectrophotometer for enclosing 200-1100nm carries out the reflectance test of film, and obtained numerical value is 60.3%, is used
GB/T 21529-2008 electrolysis tests the water vapour permeability of PVDF thin film, and obtained numerical value is 50g/m2*day。
Claims (7)
1. a kind of PVDF thin film of high reflectance, which is characterized in that the PVDF thin film internal layer is by way of vacuum evaporation
Last layer aluminium layer is plated, the thickness of PVDF layers is 10-60 microns, and the thickness of the aluminium coated is 30-60 nanometers.
2. the PVDF thin film preparation method of a kind of high reflectance described in claim 1, which is characterized in that include the following steps：
（1）PVDF layers are prepared, wherein PVDF layers includes 50-80 parts by weight PVDF, 5-20 parts by weight titanium dioxide, 1-10 parts by weight
PMMA, 0.05-2 parts by weight antioxidant and 0.05-2 parts by weight anti ultraviolet agents；After more than raw material is carried out mixed at high speed, using double
Screw extruder is granulated, then prepares film semi-finished product with blowing or the tape casting, is made after being cut finally by cutting machine
PVDF thin film；
（2）Aluminium coated is prepared, in step（1）Obtained PVDF thin film surface carries out sided corona treatment so that film surface tension reaches
To 38 × 10-5N-40×10-5N, then wound and be placed in vacuum chamber, vacuum chamber is closed, until the model of vacuum degree
System is contained 10-6-10-2Evaporation source is warming up to 1400 DEG C -1500 DEG C, then the aluminum metal silk that purity is 99.9% is continuous by pa
It send to evaporation source high-temperature region, control aluminium gas molecule in space number evaporation rate is 1.0 × 1017g/cm*s-2.0×1017G/cm*s,
The movement speed of PVDF thin film is 1/2 times of aluminium gas molecule in space number evaporation rate, opens cooling source, aluminium wire is made to connect in high-temperature region
Continuous fusing, evaporation, so as to form one layer of bright aluminium coated on mobile PVDF thin film surface, after cooling finished product,
Finished product can obtain a kind of PVDF thin film of high reflectance after being cut by specification.
A kind of 3. PVDF thin film preparation method of high reflectance according to claim 2, which is characterized in that the antioxygen
Agent is decanedioic acid two (2,2,6,6- tetramethyl -4- piperidyls) ester, phosphorous acid three (1,2,2,6,6- pentamethyl -4- piperidyls)
Ester, poly- [(1- (β-ethyl) -2,2,6,6- tetramethyl -4- piperidyls) succinic acid], poly- { [6- [(1,1,3,3- tetramethyl fourths
Base)-subunit] -1,3,5- triazine -2,4- diyls], [2- (2,2,6,6- tetramethyl -4- piperidyls)-secondary amino]-hexa-methylene -
[4- (2,2,6,6- tetramethyl -4- piperidyls)-secondary amino] } in one or more combinations.
A kind of 4. PVDF thin film preparation method of high reflectance according to claim 2, which is characterized in that the anti-purple
Outer dose is 2- (2 '-methyl -4 '-hydroxy phenyl) benzotriazole, double-(2- methoxyl group -4- hydroxyl -5- benzoylphenyls) first
Alkane, 2- (2 '-hydroxy-5-methyl base phenyl) benzotriazole, 2- (2 '-hydroxy-5-methyl base phenyl) -5- butyl's esters benzo three
Azoles, 2- hydroxyl -4- alkoxy benzophenones, 3,5- di-t-butyl -4- hydroxy-benzoic acids cetyl ester, three (1,2,2,6,6-
Pentamethyl -4- piperidyls) phosphite ester, the double -2,2,6,6- tetramethyl piperidines alcohol esters of decanedioic acid, succinic acid and 4- hydroxyl -2,2,
Polymer, the N of 6,6- tetramethyl -1- piperidine alcohols, N '-bis- (2,2,6,6- tetramethyl -4- piperidyls) -1,6- hexamethylene diamines and 2,4-
Polymer, the N of two chloro- 6- (1,1,3,3- tetramethyl butyl) amino -1,3,5-triazines, N '-bis- (2,2,6,6- tetramethyl -4-
Piperidyl) -1,6- hexamethylene diamines and 2,4- bis- chloro- 6- (4- morpholinyls) -1,3,5- triazines polymer in it is one or more
Combination.
5. a kind of PVDF thin film of high reflectance described in claim 1 is applied in photovoltaic back is prepared.
6. a kind of PVDF thin film of high reflectance described in claim 5 application process, feature in photovoltaic back is prepared exist
In：Aluminizing in a kind of PVDF thin film of high reflectance described in claim 1 and is coated poly- pair of polyurethane glue at level
Ethylene terephthalate（PET）It is compound to carry out the first face, the non-face of aluminizing of PVDF thin film is placed on outer layer, and the another side of PET coats
After polyurethane glue, the compound of the second face directly is carried out with polyolefin film, can be obtained after compound good sample is stood curing
Photovoltaic back, when above-mentioned photovoltaic back is laminated, by non-face and the polyethylene-polyvinyl acetate of aluminizing of the first face composite surface PVDF thin film
Ester copolymer (EVA) is laminated, outer layer of the second face composite surface as photovoltaic back.
7. a kind of PVDF thin film of high reflectance according to claim 6 application process in photovoltaic back is prepared, special
Sign is that the polyolefin film is Kynoar（PVDF）Or modified polyethylene（PE）Film.
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