CN108169831A - 940nm spike filters and its alternation Film Design method - Google Patents
940nm spike filters and its alternation Film Design method Download PDFInfo
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- CN108169831A CN108169831A CN201810049492.1A CN201810049492A CN108169831A CN 108169831 A CN108169831 A CN 108169831A CN 201810049492 A CN201810049492 A CN 201810049492A CN 108169831 A CN108169831 A CN 108169831A
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- G—PHYSICS
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Abstract
The present invention relates to a kind of 940nm spike filters and its design methods, and including substrate, the first alternation membrane stack and the second alternation membrane stack, the first alternation membrane stack is deposited on upper surface of base plate, and the second alternation membrane stack is set to the first alternation membrane stack upper surface, and film structure is：Sub│(α1Hβ1Lα2Hβ2L…αnHβnL)(i1Hk1Li2Hk2L…inHknL)│Air；The curve that the optical thickness coefficient of curve and low-index material film layer that high-index material film layer optical thickness coefficient is formed is formed in first alternation membrane stack and the second alternation membrane stack is respectively the waveform in the π numerical intervals of 0~pi/2 in sine curve, the pi/2 of pi/2~π, π~3 or 3 pi/2s~2, and two curve alternation trend are opposite.The present invention prepares 940nm spike filters using general refractive index coating materials, vacuum vapour deposition, low cost, which there is the narrowband that centre wavelength is 940nm to penetrate spectrum, and the rising edge and failing edge of transmission bands are precipitous, and waveform rectangular degree is good.
Description
Technical field
The present invention relates to a kind of 940nm spike filters and its alternation Film Design methods, belong to optical coating technology neck
Domain.
Background technology
Face recognition technology is that the facial feature information of people is identified, it is a kind of biological identification technology.It is regarded with 3D
Feel image or video flowing that system acquisition contains face, and according to the automatic detect and track face of image, and 3D is carried out to face
Feature location, extraction stereo data, achieve the purpose that accurately identify different people identity by comparing identification.
The infrared light receiving module of 3D vision systems is used to that the infrared light that subject reflects to be received and handled,
Obtain the spatial information of subject.Infrared light receiving module is mainly made of three parts：Near-infrared image sensor, narrowband
Optical filter, camera lens.Spike filter is placed between the camera lens of 3D cameras and near-infrared image sensor, and near infrared light is allowed to lead to
Ambient light is filtered while mistake.Infrared light supply is work in 3D vision systems " source ", is the main " work(for realizing depth survey
One of minister ", the infrared light supply of 3D vision systems mainly have infrared LED and laser (mainly VCSEL).As VCSEL emits
It is the near infrared light of 940nm wavelength, therefore needs, by the ambient light " rejecting " other than 940nm, to allow and connect in 3D camera receiving terminals
The infrared image sensor of receiving end receives only the near infrared light of 940nm.To reach this purpose, it is necessary to it is narrow to use 940nm
Band optical filter.
At present, 940nm spike filters deposit α-silicon/silicon dioxide multilayer film preparation using magnetron sputtering method, but exist
The problems such as magnetic-controlled sputtering coating equipment is expensive, cost of manufacture is high.
Invention content
The step of preparing 940nm spike filters the purpose of the present invention is to solve magnetron sputtering method is complex and high cost
The problem of, a kind of 940nm spike filters and its alternation Film Design method are provided, the optical filter energy prepared using the membrane system
General refractive index coating materials is enough used to be prepared using vacuum vapour deposition for raw material, greatly reduce the production cost of optical filter.
The present invention adopts the following technical scheme that：A kind of 940nm spike filters, including substrate, the first alternation membrane stack and
Two alternation membrane stacks, the first alternation membrane stack are deposited on upper surface of base plate, and the second alternation membrane stack is set to the first alternation film
Heap upper surface, film structure are：Sub│(α1Hβ1Lα2Hβ2L…αnHβnL)(i1Hk 1Li2Hk 2L…inHk nL)│Air；
Wherein, Sub represents substrate,(α1Hβ1Lα2Hβ2L…αnHβnL)For the first alternation membrane stack,(i 1Hk 1Li2Hk 2L… inHk nL) it is the second alternation membrane stack, Air represents air；H represents high-index material film layer, and L represents low-index material film layer；
One high-index material film layer and an adjacent paired low-index material film layer form a height antithesis unit,
N is the first alternation membrane stack, height antithesis element number in the second alternation membrane stack, n round numbers；α、iRepresent high refraction in each membrane stack
Film layer optical thickness accounts for λ on the optical thickness coefficient of rate film layer, i.e. substrate vertical direction0/ 4 multiple,β、K represents each film
The optical thickness coefficient of low-index material film layer in heap, i.e., film layer optical thickness accounts for λ in substrate vertical direction0/ 4 multiple, λ0
Centered on wavelength.
Further, in first membrane stack high-index material film layer H optical thickness coefficientα1 ,α2 ...,αn It is formed
Curve and low-index material film layer L optical thickness coefficientβ 1,β 2...,β nThe curve of formation is respectively in sine curve
The π numerical intervals of 0~pi/2, the pi/2 of pi/2~π, π~3 or 3 pi/2s~2 in waveform, and two curve alternation trend are opposite.
Further, in second membrane stack high-index material film layer H optical thickness coefficient i1, i2..., inIt is formed
Curve and low-index material film layer L optical thickness coefficient k1, k2..., knThe curve of formation is respectively in sine curve
The π numerical intervals of 0~pi/2, the pi/2 of pi/2~π, π~3 or 3 pi/2s~2 in waveform, and two curve alternation trend are opposite.
Further, the optical thickness coefficient of the high-index material film layer Hα、The value range of i is, 0.2≤α、i
≤ 2.7, the optical thickness coefficient of the low-index material film layer Lβ、The value range of k is, 0.2≤β、k≤2.7。
Further, described (i1, i2..., in)=m (α 1,α 2...,α n),(k1, k2..., kn)=m (β 1,β 2...,β n), wherein 1.4≤m≤1.5.
Further, the physical thickness of the high-index material film layer H is 10~300nm, low-index material film layer L
Physical thickness be 10~300nm.
Further, the refractive index of the high-index material film layer H is 2.05~3.00, the low-index material film
The refractive index of layer L is 1.30~1.65.
Further, the refraction materials film layer contains TiO2、Ta2O5、Nb2O5One or more of, the low folding
The rate film layer of penetrating contains SiO2、MgF2One or both of mixture.
Further, the substrate uses short-wave absorption substrate.
The alternation Film Design method of 940nm spike filters：
(1) initial membrane system is edited：High-index material H, low-index material L are selected according to centre wavelength 940nm, used
Membrane stack equation editing membrane system generates the HL antithesis differences of the first initial membrane system of alternation membrane stack, wherein each height antithesis unit
For the accurate calculating that fixed constant a C, C is spread from the refractive index of high-index material H, specific formula for calculation is：
C=(nλ=300nm-nλ=900nm)×10-2
(2) film thickness is cut, and under the premise of ensureing that HL antithesis differences are basically unchanged, makes the light of high-index material film layer H
Learn thickness coefficientα 1,α 2...,α nAnd the optical thickness coefficient of low-index material film layer Lβ n,β n-1β n-1 ...,β 1It is formed
Curve follow the waveform variations of same sinusoidal four semifocal chords respectively, 0~pi/2, pi/2~π in sine curve,
Identical gradation law in the π numerical intervals of the pi/2 of π~3 or 3 pi/2s~2；
(3) by the optical thickness coefficient of the high-index material film layer H after cuttingα 1,α 2...,α nAnd low-refraction material
Expect the optical thickness coefficient of film layer Lβ n,β n-1...,β 1Partition,α 1 β 1、α 2 β 2、...、α n β nIt matches again one by one, generation first is passed
Become the final membrane system of membrane stack.
(4) second alternation membrane stack membrane systems determine, according to (i1, i2..., in)=m (α 1,α 2...,α n),(k1, k2...,
kn)=m (β 1,β 2...,β n), wherein 1.4≤m≤1.5, generate the second alternation membrane stack membrane system；
(5) by substrate transmittance curve and the first alternation membrane stack transmittance curve and the second alternation membrane stack transmittance curve phase
With reference to obtaining 940nm spike filters.
The curve that the optical thickness coefficient of high-index material film layer H is formed in first membrane stack and low-index material film layer
The curve that the optical thickness coefficient of L is formed is X-type；The optical thickness coefficient of high-index material film layer H is formed in second membrane stack
The curve that is formed of optical thickness coefficient of curve and low-index material film layer L be X-type.
Beneficial effects of the present invention are：The narrowband that there is the optical filter that the present invention is prepared centre wavelength to be 940nm is saturating
Spectrum is crossed, the rising edge and failing edge of transmission bands are precipitous, and waveform rectangular degree is good, peak transmittance>95%th, end in cut-off region
Depth<0.1%, transmitance half value bandwidth 30-35nm, and at large angle incidence (0~30 °), transmission peak value and waveform rectangle
Degree variation is little, and Film Design method using the present invention can use general refractive index coating materials to be steamed for raw material using vacuum
Prepared by plating method, greatly reduce the production cost of optical filter.
Description of the drawings
Fig. 1 is the structure diagram of the 940nm spike filters of the present invention；
Fig. 2 is a kind of film structure figure of the 940nm spike filters of the present invention；
Fig. 3 is the transmitance of embodiment 1 and the relational graph of wavelength in the present invention；
Fig. 4 is the transmitance of embodiment 2 and the relational graph of wavelength in the present invention；
Fig. 5 is the transmitance of embodiment 3 and the relational graph of wavelength in the present invention.
Reference numeral：Substrate 1, the first alternation membrane stack 2, the second alternation membrane stack 3, high-index material film layer H 20, low folding
Penetrate rate film layer L 21, high-index material film layer H 30, low-index material film layer L 31.
Specific embodiment
Below in conjunction with attached drawing, the invention will be further described.
It is the structure diagram of 940nm spike filters as shown in Figure 1, is passed including substrate, the first alternation membrane stack and second
Become membrane stack, the first alternation membrane stack is deposited on upper surface of base plate, and the second alternation membrane stack is set to the first alternation membrane stack upper surface.
As shown in Fig. 2, it is respectively formed in 940nm spike filters in 22-40 layers of 1-20 layers of the first membrane stack and the second membrane stack
Two X-types.
Embodiment one：
Be the glass or COP of the α-Si of 500nm for substrate to be coated with thickness, the substrate front setting by high refractive index
Film layer TiO2With low-index material film layer SiO2The alternately laminated reflectance coating formed, back side setting are λ by optical thickness0/
4 TiO2Layer and SiO2The antireflection film (AR) that layer is formed.Wherein, the centre wavelength of incident light is set as 940nm, high refractive index
Film layer TiO2Refractive index for 2.354, low refractive index film SiO2Refractive index for 1.46, reflect the optical thickness system of membrane system
Number is designed as：
First membrane stack：0.142H 1.557L 0.224H 1.378L 0.31H 1.308L 0.465H 1.242L
0.481H1.164L 0.558H 1.113L 0.625H 1.034L 0.669H 0.975L 0.759H 0.903L 0.818H
0.836L0.903H 0.746L 0.959H 0.72L 1.02H 0.615L 1.093H 0.571L 1.172H 0.507L
1.257H0.417L 1.328H 0.273L 1.379H 0.258L 1.599H 0.223L 2.085H 1.72L, wherein high folding
Curve that the optical thickness coefficient of rate film layer formed is penetrated as the waveform in the π numerical intervals of 3 pi/2s in sine curve~2, it is low
The curve that the optical thickness coefficient of refraction materials film layer is formed is the waveform in the pi/2 numerical intervals of the π in sine curve~3；
Second membrane stack：0.204H 2.242L 0.323H 1.984L 0.446H 1.884L 0.671H
1.788L0.693H 1.676L 0.804H 1.603L 0.901H 1.489L 0.963H 1.404L 1.093H
1.301L1.178H 1.204L 1.301H 1.074L 1.381H 1.037L 1.469H 0.886L 1.574H
0.822L1.688H 0.73L 1.688H 0.731L 1.81H 0.601L 1.912H 0.393L 1.986H 0.372L
The curve that the optical thickness coefficient of 2.303H0.321L, wherein high-index material film layer is formed for 3 pi/2s in sine curve~
Waveform in 2 π numerical intervals, the curve that the optical thickness coefficient of low-index material film layer is formed is π~3 in sine curve
Waveform in pi/2 numerical intervals；
The spectral characteristic of above-mentioned 940nm spike filters is simulated using Film Design software, analog result is shown in
Fig. 3.
In figure 3, the longitudinal axis is transmissivity, and horizontal axis is wavelength.By in Fig. 3 it is found that the rising edge of curve of spectrum transmission bands and
Failing edge is precipitous, and waveform rectangular degree is good, wherein peak transmittance 99%, cut-off depth in cut-off region<0.1%.
Embodiment two：
Be the glass or COP of the α-Si of 500nm for substrate to be coated with thickness, the substrate front setting by high refractive index
Film layer TiO2With low-index material film layer SiO2The alternately laminated reflectance coating formed, back side setting are λ by optical thickness0/
4 TiO2Layer and SiO2The antireflection film (AR) that layer is formed.Wherein, the centre wavelength of incident light is set as 940nm, high refractive index
Film layer TiO2Refractive index for 2.354, low refractive index film SiO2Refractive index for 1.46, reflect the optical thickness system of membrane system
Number is designed as：
First membrane stack：0.135H 1.479L 0.213H 1.309L 0.295H 1.243L 0.442H
1.180L0.457H 1.106L 0.530H 1.057L 0.594H 0.982L 0.636H 0.926L 0.721H
0.858L0.777H 0.794L 0.858H 0.709L 0.911H 0.684L 0.969H 0.584L 1.038H 0.542L
1.113H0.482L 1.194H 0.396L 1.262H 0.259L 1.310H 0.245L 1.403H 0.212L
The curve that the optical thickness coefficient of 3.280H0.905L, wherein high-index material film layer is formed for 3 pi/2s in sine curve~
Waveform in 2 π numerical intervals, the curve that the optical thickness coefficient of low-index material film layer is formed is π~3 in sine curve
Waveform in pi/2 numerical intervals；
Second membrane stack：0.202H 2.219L 0.319H 1.964L 0.442H 1.864L 0.663H
1.770L0.685H 1.659L 0.795H 1.586L 0.891H 1.473L 0.953H 1.389L 1.082H
1.287L1.166H 1.191L 1.287H 1.063L 1.367H 1.026L 1.454H 0.876L 1.558H
0.814L1.670H 0.722L 1.791H 0.594L 1.892H 0.389L 1.965H 0.368L 2.105H
The curve that the optical thickness coefficient of 0.318L4.594H 1.265L, wherein high-index material film layer are formed is in sine curve
The π numerical intervals of 3 pi/2s~2 in waveform, the curve that the optical thickness coefficient of low-index material film layer is formed is sine curve
In the pi/2 numerical intervals of π~3 in waveform；
The spectral characteristic of above-mentioned 940nm spike filters is simulated using Film Design software, analog result is shown in
Fig. 4.
In Fig. 4, the longitudinal axis is transmissivity, and horizontal axis is wavelength.By in Fig. 4 it is found that the rising edge of curve of spectrum transmission bands and
Failing edge is precipitous, and waveform rectangular degree is good, wherein peak transmittance 97%, cut-off depth in cut-off region<0.1%.
Embodiment three：
Be the glass or COP of the α-Si of 500nm for substrate to be coated with thickness, the substrate front setting by high refractive index
Film layer TiO2With low-index material film layer SiO2The alternately laminated reflectance coating formed, back side setting are λ by optical thickness0/
4 TiO2Layer and SiO2The antireflection film (AR) that layer is formed.Wherein, the centre wavelength of incident light is set as 940nm, high refractive index
Film layer TiO2Refractive index for 2.354, low refractive index film SiO2Refractive index for 1.46, reflect the optical thickness system of membrane system
Number is designed as：
First membrane stack：0.166H 1.270L 0.340H 1.199L 0.428H 1.156L 0.440H
1.085L0.522H 1.035L 0.580H 0.963L 0.650H 0.908L 0.712H 0.842L 0.775H
0.772L0.843H 0.701L 0.901H 0.677L 0.957H 0.572L 1.018H 0.537L 1.090H 0.476L
1.17H0.426L 1.228H 0.331L 1.256H 0.349L 1.365H 0.302L 1.467H 0.162L 2.085H
The curve that the optical thickness coefficient of 1.72L, wherein high-index material film layer is formed is the π numerical value of 3 pi/2s in sine curve~2
Waveform in section, the curve that the optical thickness coefficient of low-index material film layer is formed are the pi/2 number of the π in sine curve~3
The waveform being worth in section；
Second membrane stack：0.24H 1.842L 0.493H 1.739L 0.621H 1.676L 0.638H 1.573L
0.757H1.501L 0.841H 1.397L 0.943H 1.317L 1.032H 1.221L 1.124H 1.119L 1.222H
1.016L1.306H 0.982L 1.387H 0.83L 1.476H 0.778L 1.581H 0.69L 1.697H 0.618L
1.781H0.48L 1.821H 0.506L 1.979H 0.438L 2.127H 0.235L's, wherein high-index material film layer
The curve that optical thickness coefficient is formed is the waveform in the π numerical intervals of 3 pi/2s in sine curve~2, low-index material film layer
The curve that is formed of optical thickness coefficient be the waveform in the pi/2 numerical intervals of the π in sine curve~3；
The spectral characteristic of above-mentioned 940nm spike filters is simulated using Film Design software, analog result is shown in
Fig. 5.
In Figure 5, the longitudinal axis is transmissivity, and horizontal axis is wavelength.By in Fig. 5 it is found that the rising edge of curve of spectrum transmission bands and
Failing edge is precipitous, and waveform rectangular degree is good, wherein peak transmittance 98%, cut-off depth in cut-off region<0.1%.
Claims (10)
1. a kind of 940nm spike filters, it is characterised in that：It is described including substrate, the first alternation membrane stack and the second alternation membrane stack
First alternation membrane stack is deposited on upper surface of base plate, and the second alternation membrane stack is set to the first alternation membrane stack upper surface, membrane system knot
Structure is：Sub│(α1Hβ1Lα2Hβ2L…αnHβnL)(i1Hk1Li2Hk2L…inHknL)│Air；
Wherein, Sub represents substrate,(α1Hβ1Lα2Hβ2L…αnHβnL)For the first alternation membrane stack,(i1Hk1Li2Hk2L…inHknL)
For the second alternation membrane stack, Air represents air；H represents high-index material film layer, and L represents low-index material film layer；One height
Refraction materials film layer and an adjacent paired low-index material film layer form a height antithesis unit, n the
Height antithesis element number in one alternation membrane stack, the second alternation membrane stack, n round numbers；α、iRepresent high-index material in each membrane stack
Film layer optical thickness accounts for λ on the optical thickness coefficient of film layer, i.e. substrate vertical direction0/ 4 multiple,β、kRepresent low in each membrane stack
Film layer optical thickness accounts for λ on the optical thickness coefficient of refraction materials film layer, i.e. substrate vertical direction0/ 4 multiple, λ0Centered on
Wavelength.
2. 940nm spike filters as described in claim 1, it is characterised in that：High-index material in first membrane stack
The optical thickness coefficient of film layer Hα1 ,α2 ...,αn The curve of formation and the optical thickness coefficient of low-index material film layer Lβ1 ,β2 ...,βn The curve of formation is respectively in the π numerical intervals of 0~pi/2 in sine curve, the pi/2 of pi/2~π, π~3 or 3 pi/2s~2
Waveform, and two curve alternation trend are opposite.
3. 940nm spike filters as described in claim 1, it is characterised in that：High-index material in second membrane stack
The optical thickness coefficient i of film layer H1, i2..., inThe curve of formation and the optical thickness coefficient k of low-index material film layer L1,
k2..., knThe curve of formation is respectively in the π numerical intervals of 0~pi/2 in sine curve, the pi/2 of pi/2~π, π~3 or 3 pi/2s~2
Waveform, and two curve alternation trend are opposite.
4. 940nm spike filters as described in claim 1, it is characterised in that：The optics of the high-index material film layer H
Thickness coefficientα、iValue range be, 0.2≤α、i≤ 2.7, the optical thickness coefficient of the low-index material film layer Lβ、k
Value range be, 0.2≤β、k≤2.7。
5. 940nm spike filters as described in claim 1, it is characterised in that：(the i1, i2..., in)=m (α1 ,α2 ...,αn ),(k1, k2..., kn)=m (β1 ,β2 ...,βn ), wherein 1.4≤m≤1.5.
6. 940nm spike filters as described in claim 1, it is characterised in that：The physics of the high-index material film layer H
Thickness is 10~300nm, and the physical thickness of low-index material film layer L is 10~300nm.
7. 940nm spike filters as described in claim 1, it is characterised in that：The refraction of the high-index material film layer H
Rate is 2.05~3.00, and the refractive index of the low-index material film layer L is 1.30~1.65.
8. 940nm spike filters as described in claim 1, it is characterised in that：The refraction materials film layer contains TiO2、
Ta2O5、Nb2O5One or more of, the low-index material film layer contains SiO2、MgF2One or both of mixing
Object.
9. 940nm spike filters as described in claim 1, it is characterised in that：The substrate uses short-wave absorption substrate.
10. the alternation Film Design method of 940nm spike filters described in claim 1, it is characterised in that：
(1) initial membrane system is edited：High-index material H, low-index material L are selected according to centre wavelength 940nm, use membrane stack
Equation editing membrane system generates the first initial membrane system of alternation membrane stack, and the wherein HL antithesis difference of each height antithesis unit is one
The accurate calculating that fixed constant C, C are spread from the refractive index of high-index material H, specific formula for calculation are：
C=(nλ=300nm-nλ=900nm)×10-2
(2) film thickness is cut, and under the premise of ensureing that HL antithesis differences are basically unchanged, the optics for making high-index material film layer H is thick
Spend coefficientα1 ,α2 ...,αn And the optical thickness coefficient of low-index material film layer Lβn ,β n-1...,β 1The curve of formation point
Do not follow the waveform variation of same sinusoidal four semifocal chords, the pi/2 of 0~pi/2, pi/2~π, π in sine curve~3
Or the identical gradation law in the π numerical intervals of 3 pi/2~2；
(3) by the optical thickness coefficient of the high-index material film layer H after cuttingα 1,α 2...,α nAnd low-index material film
The optical thickness coefficient of layer Lβ n,β n-1...,β 1Partition,α1β 1、α2β 2、...、αnβ nIt matches again one by one, generates the first alternation film
The final membrane system of heap.
(4) second alternation membrane stack membrane systems determine, according to (i1, i2..., in)=m (α 1,α 2...,α n),(k1, k2..., kn)=
m(β 1,β 2...,β n), wherein 1.4≤m≤1.5, generate the second alternation membrane stack membrane system；
(5) substrate transmittance curve and the first alternation membrane stack transmittance curve and the second alternation membrane stack transmittance curve are mutually tied
It closes, obtains 940nm spike filters.
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| CN111290066A (en) * | 2018-12-07 | 2020-06-16 | 张家港康得新光电材料有限公司 | Infrared band cut-off filter and application thereof |
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