CN108155275A - The Enhancement Method that a kind of quantum dot ZnS doped energy-band visible rays of containing transition metal element shine - Google Patents
The Enhancement Method that a kind of quantum dot ZnS doped energy-band visible rays of containing transition metal element shine Download PDFInfo
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- CN108155275A CN108155275A CN201711374786.3A CN201711374786A CN108155275A CN 108155275 A CN108155275 A CN 108155275A CN 201711374786 A CN201711374786 A CN 201711374786A CN 108155275 A CN108155275 A CN 108155275A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 21
- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 238000000137 annealing Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000002086 nanomaterial Substances 0.000 claims abstract description 12
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims abstract description 7
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 7
- 238000000609 electron-beam lithography Methods 0.000 claims abstract description 5
- 239000012528 membrane Substances 0.000 claims abstract description 5
- 230000008033 biological extinction Effects 0.000 claims abstract description 4
- 230000002708 enhancing effect Effects 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000011324 bead Substances 0.000 claims description 2
- 238000012512 characterization method Methods 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000004090 dissolution Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000002244 precipitate Substances 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000003980 solgel method Methods 0.000 claims description 2
- 238000010025 steaming Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 239000000047 product Substances 0.000 claims 1
- 238000001228 spectrum Methods 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000033228 biological regulation Effects 0.000 abstract description 2
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 45
- 239000011572 manganese Substances 0.000 description 28
- 239000010931 gold Substances 0.000 description 19
- 230000000694 effects Effects 0.000 description 10
- 238000012546 transfer Methods 0.000 description 8
- 230000005284 excitation Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004471 energy level splitting Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000241 photoluminescence detection Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
- H01L33/285—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table characterised by the doping materials
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- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Luminescent Compositions (AREA)
Abstract
The present invention relates to the Enhancement Method that a kind of quantum dot ZnS doped energy-band visible rays of containing transition metal element shine, including preparing ZnS doping Mn quantum dots with sol-gal process；One layer of metal Nano structure is deposited in Si on pieces with vacuum evaporation technology；Ti/Ag nanostructured of the tool there are two bow-tie type is prepared with electron beam lithography；Method is steamed by gas phase, one layer of SiO is deposited on metal nano material surface2Material, thickness are 2 3nm；The ZnS quantum dot of preparation is spin-coated on a nanometer surface for island membrane structure.The beneficial effects of the invention are as follows：Experimentally, the ZnS quantum dot of doping Mn elements is prepared for, passes through the regulation and control to the size of nano metal, shape and intergranular relative position so that its extinction spectra is in most strong resonance coupling with ZnS quantum dot doped energy-band；By being made annealing treatment to metallic island films, in 120 DEG C and the annealing of 30 minutes, ZnS doped energy-bands caused by obtaining the plasma resonance of metal nanoparticle it is luminous most strong.
Description
Technical field
The present invention relates to the composite construction fluorescence radiations that nanometer metal structure and quantum dot form, and belong to Nano semiconductor material
Material shines and plasma resonance enhances field.
Background technology
Nano semiconductor material has unique advantage in terms of photoelectricity and electro-optic conversion, and this material is academicly referred to as
Quantum dot.Reach the requirement of device by the shapes and sizes of quantum point its band gap.It is adulterated in quantum dot various
Element can also realize the spectral tuning effect of quantum dot, as Michael has studied the low concentration transition metal of ZnS nanocrystalline body
(Mn2+, Cu2+, Ni2+) doping realize visible ray shine, but with it is intrinsic shine (ultra-violet light-emitting) compared with, the hair of doped energy-band
Light is relatively weak.So far, people employ many methods and come quantum point and body material emission, blunt by surface
Change, the doping concentration of increase transition metal, increase shell, control quantum dot particle uniformity etc..These methods are although sending out
Tool has certain effect, but the effect unobvious of luminescence enhancement in terms of the spectral tuning of light.
In recent years, the research of local surface plasma is increasingly taken seriously.Unique object is presented in many fields
Reason and chemical characteristic, people are with having carried out the research of opto-electronic device using its characteristic.Has " table in terms of spectral investigation
Concept as surface plasma spectroscopy ".Metal nanoparticle can not only be applied to photoelectron to the enhancement effect of fluorescence
On device and laser, can be applied in bio-sensing etc., such as with metal nanoparticle to the enhancement effect of fluorescence come
Improve the fluorescence intensity of fluorescent molecular.The research of surface plasma enhancement effect increases via to initial several indivedual spectrum
The description of strong phenomenon, gradually developing becomes an abundant in content new branch of science.
Invention content
The purpose of the present invention is overcoming deficiency of the prior art, a kind of quantum dot of containing transition metal element is provided
The Enhancement Method that ZnS doped energy-band visible rays shine.
The Enhancement Method that a kind of quantum dot ZnS doped energy-band visible rays of containing transition metal element shine, including as follows
Step：
1) ZnS doping Mn quantum dots are prepared with sol-gel method；
2) one layer of metal Nano structure is deposited in Si on pieces with vacuum evaporation technology；
3) Ti/Ag nanostructured of the tool there are two bow-tie type is prepared with electron beam lithography；
4) method is steamed by gas phase, one layer of SiO is deposited on metal nano material surface2Material, thickness 2-3nm；
5) ZnS quantum dot of preparation is spin-coated on a nanometer surface for island membrane structure.
Step 1) specifically includes：Prepare the ZnS of certain diameter:Mn, Mn2+With Zn2+0.01 quantum dot of molar ratio；Pass through tune
Save Mn2+With Zn2+Molar ratio controls doping concentration；First by the Zn (CH of a concentration of 1M of 5ml3COO)2﹒ 2H2O is placed on three mouthfuls of burnings
In bottle, the PVP of 0.55g is added in, dissolves and continues to stir, then add in the Mn (CH3COO) of a concentration of 0.01M of 5ml2﹒ 2H2O, it is complete
The Na of a concentration of 0.85M of 5ml is slowly added dropwise in fully dissolved2S solution forms white precipitate, persistently stirs 4h；Finally, it will obtain
White suspension centrifuges 10min in 3500r/min, and precipitation is cleaned twice with deionized water, is placed in spare in isopropanol.
Step 3) specifically includes：Substrate of glass is cleaned first, is then spin coated onto one layer of positive electron sensitive resist；In electric hot plate
Upper drying two minutes, electron beam lithography sample, and selective exposed sample in the resist, so as to form the figure being pre-designed
Case；Sample impregnates 30 minutes in developer solution；It is sputtered using high vacuum spiral and metal Ti and Ag is plated on pattern；Finally,
The glass sample that this block has metal layer and resist is put into developing solution dissolution, and the nano metal being deposited directly on glass retains
Come, be deposited on dissolving metal on resist in developer solution.
Step 4) specifically includes：
1. prepare metal island film, metal island film thickness about 8-25nm, preparation method using vacuum evaporation technology：Exist first
In sample room, prill is placed on pallet boat, places clean on silicon chip on it；Secondly, with mechanical pump or molecular pump
It is vacuumized in sample room, air pressure drops to 1 × 10-5Pa；Third, by the noble metal bead of electric current 60-80A heated bases, in crystalline substance
The metal island film thickness of Si on pieces deposition is observed on Vibration Meter, when reaching expected thickness, baffle and current switch is closed, treats gas
Drops take out sample；
2. with the pattern of SEM characterization metal nanoparticles, the sample of acquisition is carried out to the measure of extinction coefficient；
3. sample is put into vacuum glove box, under nitrogen protection, at a temperature of 120 DEG C, 150 DEG C and 200 DEG C respectively
Make annealing treatment within 30 minutes；
4. steaming method by gas phase, layer of silicon dioxide material is deposited on metal nano material surface, thickness is about a 2-3nm left sides
It is right.
Step 5) specifically includes：The ZnS quantum dot of preparation is spin-coated on a nanometer surface for island membrane structure, rotating speed
2000rpm；And carry out drying and other treatment.
The beneficial effects of the invention are as follows:By the plasma resonance luminous function that noble metal nano particles are strong, obtain
The visible ray luminescent effect of ZnS quantum dot doped energy-band with higher-strength.Experimentally, doping Mn elements are prepared for
ZnS quantum dot passes through the regulation and control to the size of nano metal, shape and intergranular relative position so that its extinction spectra
Most strong resonance coupling is in ZnS quantum dot doped energy-band.So as to fulfill the luminescence enhancement of doped energy-band.In theory,
Establish the model of plasma luminescence enhancing.Experimentally, by being made annealing treatment to metallic island films, at 120 DEG C and 30
The annealing of minutes, ZnS doped energy-bands caused by obtaining the plasma resonance of metal nanoparticle it is luminous most strong.
Description of the drawings
Fig. 1 is Au nanometers of island structures made of vacuum evaporation
Fig. 2 is with periodic knot shape Ag nanostructureds STM figures in pairs
Fig. 3 mixes test chart of the manganese as quantum dot HR-TEM for ZnS
Fig. 4 is the Au-ZnS under different temperatures annealing：The PL luminous spectrums of Mn compound systems, the average thickness of Au nano islands is about
Scheme for 9.7nm
Fig. 5 is the Au-ZnS under 120 DEG C of annealing：The PL luminous spectrums of Mn compound systems, the average thickness of Au nano islands are about
21.2nm schemes
Fig. 6 mixes the energy level of Mn with grain size variation relation for ZnS bodies materials band and quantum dot
Fig. 7 is nanometer Au structures and ZnS：The band curvature of Mn quantum dots and electric charge transfer schematic diagram.
Specific embodiment
The present invention is described further with reference to embodiment.The explanation of following embodiments is merely used to help understand this
Invention.It should be pointed out that for those skilled in the art, without departing from the principle of the present invention, also
Can to the present invention some improvement and modification can also be carried out, these improvement and modification also fall into the protection domain of the claims in the present invention
It is interior.
Implementation process mixes manganese as quanta point material using gold nano-material as plasma, using ZnS.By chemistry side
Method using PVP as surface ligand, synthesizes ZnS:Mn nanocrystals.High resolution TEM (HR-TEM) picture is shown
ZnS:The radius of Mn quantum dots about 4nm, there is apparent lattice fringe.(ZnS mixes manganese as quantum dot HR-TEM's shown in Fig. 3
Test chart).
Au nano island films are prepared with vacuum evaporation technology.Evaporation time is after 2-3 minutes in preparation method, takes out silicon
Piece.And sample is observed with SEM, shown in pattern such as Fig. 1 (a) of Au films, in metallic island, there is certain roughness, and arrange
It obtains comparatively dense.Respectively by 120 DEG C, 150 DEG C, 200 DEG C of annealing temperatures, annealing time formation in 30 minutes or so is different types of
Sample.Become sparse with arrangement after SEM observation annealing, the size increase of particle is as shown in Fig. 1 (b, c, d).The purpose of annealing is
In order to find out the nano metal template of specific shape and size, so that its surface plasma body resonant vibration frequency adulterates Mn with ZnS
The glow frequency of element is consistent.
Method is steamed by gas phase, layer of silicon dioxide material is deposited on metal nano material surface, thickness is about a 2-3nm left sides
The right side, effect are the surface oxidations for preventing metal material.Then by 5ml concentration, the ZnS of concentration 5m mol:Mn quantum dots dissolve
(Mn2+With Zn2+Molar ratio 0.01, lateral size of dots is for 4nm or so) in the nanometer Au templates of spin coating after annealing.
Fluorescence radiation detection (PL detections) is carried out to different samples after desiccation, excitation wavelength 320nm during detection, we
Respectively to the ZnS of different annealing temperature:Mn quantum dots are detected with nanometer Au island film composite materials.It was found that ZnS:Mn
Quantum dot anneals 120 DEG C (average thickness of nano island is about 9.7nm) with 2.1 times of fluorescence hair in Au films, 30 minutes time
Light enhances, as shown in Figure 4 (the Au-ZnS under different temperatures annealing：The PL luminous spectrums of Mn compound systems, the average thickness of Au nano islands
Degree is about 9.7nm).When Au film annealing temperatures continue to rise, the multiple of Fluorescence Increasing can decline, this melts with Au islands mentioned above
It is distributed after change loosely, distance increase, charge transfer effciency declines related between metal Nano structure and quantum dot.When Au islands are thin
When film average thickness is 21.2nm, 30 minutes time annealed 120 DEG C, and Fluorescence Increasing still can reach maximum, as shown in Figure 5
(the Au-ZnS under 120 DEG C of annealing：The PL luminous spectrums of Mn compound systems, the average thickness of Au nano islands is about 21.2nm).
The comparison to shine with body material of ZnS quantum dot, the energy gap of the body material ZnS of zincblende is about 3.68eV,
The fluorescence radiation caused by 460nm is defective, it may be possible to the effect in S vacancy.After the size of quantum dot reduces, due to quantum
Spot size effect, the energy level splitting of ZnS quantum dot obtain stronger, and energy gap becomes much larger.
When ZnS quantum dot adulterates Mn2+After, in the ZnS of 600nm:Mn quantum dot light emittings peak is due to exciting indirectly.One
Exciton enters the excitation state of ZnS matrix, subsequent energy transfer to Mn2+.And then, second of transition causes fluorescence radiation.This
With the Mn in ZnS2+'s4T1→6A1Transfer it is related.In the molecule, the electron energy highest in top of valence band, be bound minimum,
So it is most active, easily change；And conduction band bottom does not account for minimum energy in track in all, is easiest to receive electronics.Therefore this
Two tracks decide the electron exchange and transfer ability of molecule.Test the ZnS prepared:Mn quantum dot energy gaps are about
5.6eV can regard centre as and increase three Mn2+The impurity energy level brought.(ZnS bodies materials band and quantum dot as shown in Figure 6
The energy level of Mn is mixed with grain size variation relation, CB in figure:Conduction band be conduction band, VB:Valence band are valency
Band, HOMO:Highest Occupied Molecular Orbital are highest occupied molecular orbital and LUMO:Lowest
Unoccupied Molecular Orbital are lowest unoccupied molecular orbital).
During exciting light incidence, ZnS is made to be in excitation state, then energy is transferred to Mn from ZnS excitation state2+, in this way
Excitation indirectly, produces the PL glow peaks near 600nm.Due to ZnS：The fluorescence peak of Mn is inhaled with Au particle surfaces plasma
It is neighbouring to receive peak, so Fluorescence Increasing can be generated.Specifically principle is：ZnS：Mn on Mn quantum dots2+The local electronic of impurity energy level,
Valence band is transitted to, generates fluorescence, by Au nanoparticle absorbances, forms surface plasmon resonance, and then generate strongly
Local electromagnetic field, electromagnetic field react on illuminator, and the latter forms resonant check, as radiates resonant check.
When fluorescent nano particle and metal Nano structure are in close contact, it has been found that the luminous possibility of fluorescent nano particle
It is enhanced, it is also possible to be annihilated.Due to the close contact of the two, there has been proposed the new machines for leading to Fluorescence Increasing or bury in oblivion
System:Electric charge transfer.Fig. 7 (nanometer Au structures and ZnS：The band curvature of Mn quantum dots and electric charge transfer schematic diagram).Work as semiconductor
When nano particle and metal nanoparticle contact, cause interface band curvature.When incident light is irradiated to composite material, due to
There are free-moving electronics for metal nanoparticle, moment local surface plasma effect can be excited to absorb photon, and excite heat
Electronics.Since the resonance level of metal nano plasma is consistent with the doped energy-band of ZnS, by resonance transfer, make electronics
It is transferred to ZnS conduction bands and defect level.The hole-recombination being wherein transferred in a part and valence band for the electronics in conduction band, in addition
A part of electronics non-radiative recombination form is transferred to Mn2+On doped energy-band.It is considered that under the action of surface plasma, gold
The opposite increase of electron concentration that thermoelectron in category is transferred on doped energy-band results in the fluorescence radiation enhancing of doped energy-band.
It shines here it is the visible ray doped energy-band of the transient metal doped quantum dot ZnS of nano metal plasma enhancing substantially former
Reason.
Claims (5)
1. the Enhancement Method that a kind of quantum dot ZnS doped energy-band visible rays of containing transition metal element shine, which is characterized in that
Include the following steps：
1) ZnS doping Mn quantum dots are prepared with sol-gel method；
2) one layer of metal Nano structure is deposited in Si on pieces with vacuum evaporation technology；
3) Ti/Ag nanostructured of the tool there are two bow-tie type is prepared with electron beam lithography；
4) method is steamed by gas phase, one layer of SiO is deposited on metal nano material surface2Material, thickness 2-3nm；
5) ZnS quantum dot of preparation is spin-coated on a nanometer surface for island membrane structure.
2. the enhancing that the quantum dot ZnS doped energy-band visible rays of containing transition metal element according to claim 1 shine
Method, which is characterized in that step 1) specifically includes：
Prepare the ZnS of certain diameter:Mn, Mn2+With Zn2+0.01 quantum dot of molar ratio；By adjusting Mn2+With Zn2+Molar ratio controls
Doping concentration；First by the Zn (CH of a concentration of 1M of 5ml3COO)2﹒ 2H2O is placed in three-necked flask, adds in the PVP of 0.55g, molten
It solves and continues to stir, then add in the Mn (CH3COO) of a concentration of 0.01M of 5ml2﹒ 2H2O is completely dissolved, and 5ml concentration is slowly added dropwise
Na for 0.85M2S solution forms white precipitate, persistently stirs 4h；Finally, by obtained white suspension in 3500r/min
10min is centrifuged, precipitation is cleaned twice with deionized water, is placed in spare in isopropanol.
3. the enhancing that the quantum dot ZnS doped energy-band visible rays of containing transition metal element according to claim 1 shine
Method, which is characterized in that step 3) specifically includes：Substrate of glass is cleaned first, is then spin coated onto one layer of positive electron sensitive resist；
It dries two minutes on electric hot plate, electron beam lithography sample, and selective exposed sample in the resist, is set in advance so as to be formed
The pattern of meter；Sample impregnates 30 minutes in developer solution；It is sputtered using high vacuum spiral and metal Ti and Ag is plated on pattern；Most
Afterwards, the glass sample that this block has metal layer and resist is put into developing solution dissolution, the nano metal being deposited directly on glass
It remains, is deposited on dissolving metal on resist in developer solution.
4. the enhancing that the quantum dot ZnS doped energy-band visible rays of containing transition metal element according to claim 1 shine
Method, which is characterized in that step 4) specifically includes：
1. prepare metal island film, metal island film thickness about 8-25nm, preparation method using vacuum evaporation technology：First in sample
In room, prill is placed on pallet boat, places clean on silicon chip on it；Secondly, with mechanical pump or molecular pump in sample
Product room vacuumizes, and air pressure drops to 1 × 10-5Pa；Third, by the noble metal bead of electric current 60-80A heated bases, in crystal oscillator instrument
The metal island film thickness of upper observation Si on pieces deposition, when reaching expected thickness, closes baffle and current switch, treats under air pressure
Drop, sample is taken out；
2. with the pattern of SEM characterization metal nanoparticles, the sample of acquisition is carried out to the measure of extinction coefficient；
3. sample is put into vacuum glove box, under nitrogen protection, carried out respectively at a temperature of 120 DEG C, 150 DEG C and 200 DEG C
It makes annealing treatment within 30 minutes；
4. steaming method by gas phase, layer of silicon dioxide material is deposited on metal nano material surface, thickness is about 2-3nm or so.
5. the enhancing that the quantum dot ZnS doped energy-band visible rays of containing transition metal element according to claim 1 shine
Method, which is characterized in that step 5) specifically includes：The ZnS quantum dot of preparation is spin-coated on a nanometer surface for island membrane structure,
Rotating speed 2000rpm；And carry out drying and other treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711374786.3A CN108155275B (en) | 2017-12-19 | 2017-12-19 | Method for enhancing visible light luminescence of quantum dot ZnS doped energy level doped with transition metal element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711374786.3A CN108155275B (en) | 2017-12-19 | 2017-12-19 | Method for enhancing visible light luminescence of quantum dot ZnS doped energy level doped with transition metal element |
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| Publication Number | Publication Date |
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| CN108155275A true CN108155275A (en) | 2018-06-12 |
| CN108155275B CN108155275B (en) | 2020-08-04 |
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| CN201711374786.3A Active CN108155275B (en) | 2017-12-19 | 2017-12-19 | Method for enhancing visible light luminescence of quantum dot ZnS doped energy level doped with transition metal element |
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| CN110808315A (en) * | 2019-09-29 | 2020-02-18 | 北京工业大学 | Method for increasing GaN Micro-LED color conversion efficiency |
| CN111403611A (en) * | 2020-03-20 | 2020-07-10 | 北京工业大学 | Method for modulating phase separation and charge generation of organic photovoltaic film by using plasmon gold nanostructure |
| CN111769182A (en) * | 2020-07-10 | 2020-10-13 | 中国科学院半导体研究所 | Surface plasmon GaN-based LED epitaxial structure and preparation method and application thereof |
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| CN103840053A (en) * | 2014-03-14 | 2014-06-04 | 东南大学 | Surface-plasma-enhanced quantum dot light-emitting diode device and manufacturing method thereof |
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| CN103840053A (en) * | 2014-03-14 | 2014-06-04 | 东南大学 | Surface-plasma-enhanced quantum dot light-emitting diode device and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110808315A (en) * | 2019-09-29 | 2020-02-18 | 北京工业大学 | Method for increasing GaN Micro-LED color conversion efficiency |
| CN111403611A (en) * | 2020-03-20 | 2020-07-10 | 北京工业大学 | Method for modulating phase separation and charge generation of organic photovoltaic film by using plasmon gold nanostructure |
| CN111403611B (en) * | 2020-03-20 | 2023-09-12 | 北京工业大学 | Method for modulating phase separation and charge generation of plasmonic gold nanostructure on organic photovoltaic film |
| CN111769182A (en) * | 2020-07-10 | 2020-10-13 | 中国科学院半导体研究所 | Surface plasmon GaN-based LED epitaxial structure and preparation method and application thereof |
| CN111769182B (en) * | 2020-07-10 | 2022-03-15 | 中国科学院半导体研究所 | Surface plasmon GaN-based LED epitaxial structure and preparation method and application thereof |
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