CN108153367B - Temperature coefficient compensation circuit of semiconductor bonding wire - Google Patents
Temperature coefficient compensation circuit of semiconductor bonding wire Download PDFInfo
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- CN108153367B CN108153367B CN201711456887.5A CN201711456887A CN108153367B CN 108153367 B CN108153367 B CN 108153367B CN 201711456887 A CN201711456887 A CN 201711456887A CN 108153367 B CN108153367 B CN 108153367B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a temperature coefficient compensation circuit of a semiconductor bonding wire, which comprises an equivalent temperature control resistance module and a voltage-controlled current module, wherein the equivalent temperature control resistance module comprises a current source, a first field effect transistor, a second field effect transistor and a first operational amplifier, and the voltage-controlled current module comprises a second operational amplifier and a third field effect transistor; the current source is connected to the drain electrode of the first field effect transistor, the grid electrode of the first field effect transistor is connected with the grid electrode of the second field effect transistor, the drain electrode of the second field effect transistor is connected with the source electrode of the third field effect transistor, and the drain electrode of the third field effect transistor serves as the output end of the compensation circuit; the output end of the compensation circuit is input to the current mode power control circuit.
Description
Technical Field
The present invention relates to electronic technologies, and in particular, to a temperature coefficient compensation circuit for a semiconductor bonding wire.
Background
A power amplifier of a Global System for Mobile Communication (GSM) is generally designed to control the output power by an external control signal Vramp, and one implementation of power control is current control, which detects a collector dc current of a power stage of the amplifier and controls the dc current by a control loop according to the control signal Vramp to implement power control.
The current detection usually employs a method of serially connecting a detection resistor and detecting the voltage of the resistor to obtain a current value, in the case of a large current, the current detection resistor consumes a part of power consumption, in order to reduce the power consumption, the size of the detection resistor needs to be reduced, and in order to reduce the chip cost, the Wire resistance of the Bonding Wire of the semiconductor Bonding Wire can be used as the detection resistor in the power amplifier module, and the size of the detection resistor is generally smaller than 0.1 ohm.
The disadvantage of directly using semiconductor bonding wire as detection resistor is that the semiconductor bonding wire is usually made of gold or copper material, has a large temperature coefficient, and its temperature coefficient is positive, i.e. the resistance is increased at high temperature, and in the feedback loop, because the feedback loop directly controls the conduction voltage drop on the resistor, under the condition that the control signal Vramp is not changed, the voltage drop on the resistor can be kept unchanged by loop control, so the increase of the resistance at high temperature can lead to the reduction of the current flowing through the resistor, i.e. the reduction of the direct current of the power amplifier, and the reduction of the direct current can lead to the reduction of the output power, thereby leading the power control function to have poor temperature characteristic.
Disclosure of Invention
In order to solve the above technical problem, an embodiment of the present invention is directed to a temperature coefficient compensation circuit for a semiconductor bonding wire, which is used for compensating for a power loss of a power amplifier caused by a temperature increase when the semiconductor bonding wire is used as a detection resistor.
The technical scheme of the invention is realized as follows:
the embodiment of the invention provides a temperature coefficient compensation circuit of a semiconductor bonding wire, which comprises an equivalent temperature control resistance module and a voltage-controlled current module, wherein the equivalent temperature control resistance module comprises a current source, a first field effect transistor, a second field effect transistor and a first operational amplifier, and the voltage-controlled current module comprises a second operational amplifier and a third field effect transistor;
the current source is connected to the drain electrode of the first field effect transistor, the grid electrode of the first field effect transistor is connected with the grid electrode of the second field effect transistor, the drain electrode of the second field effect transistor is connected with the source electrode of the third field effect transistor, and the drain electrode of the third field effect transistor serves as the output end of the compensation circuit; the output end of the compensation circuit is input to the current mode power control circuit; the source electrode of the first field effect transistor and the source electrode of the second field effect transistor are grounded; the output end of the first operational amplifier is connected with the grid electrode of the first field effect transistor or the second field effect transistor; the output end of the second operational amplifier is connected with the grid electrode of the third field effect transistor;
applying a first reference voltage to the input terminal of the first operational amplifier, wherein the voltage value V of the first reference voltageref1A reference current value I of a reference current generated by the current sourceth0Satisfies the relationship: vref1/Ith0＝R2/m＝Ron(ii) a And is
Setting circuit parameters TC of the current sourceiAnd satisfies the following circuit parameters k and m: TC ═ TCi·k·m；
Wherein R is2The resistance value of a resistor which is connected in series with the source electrode of a field effect tube in the current mode power control circuit and is grounded is adopted, m is a set resistor proportionality coefficient, RonThe on-resistance of the second field effect transistor; TC is the temperature coefficient of the semiconductor bonding wire, TCiIs the temperature coefficient of the reference current.
Wherein the current sources include at least one first current source and at least one second current source; the at least one first current source is connected in parallel with the at least one second current source; the output current of the at least one first current source is proportional to absolute temperature, and the output current value I of the first current sourcePTATThe following relation is satisfied: i isPTAT＝Ith0·TCiT; wherein T is the absolute temperature;
the at least one second current source is a constant current source, and the output current value I of the second current sourceconstThe following relation is satisfied: i isconst＝Ith0·TCi·T0And a current value I of the input reference currentthiSatisfies the following relation: i isthi＝IPTAT-Iconst＝Ith0·[TCi·(T-T0)](ii) a Wherein, T0Is the reference temperature.
Wherein a second reference voltage is applied to an input terminal of the second operational amplifier; a voltage value V of the second reference voltageref2Determining according to the circuit parameter k value: vref2K Vramp; wherein Vramp is an input control voltage of the current mode power control circuit.
And the first reference voltage controls the first field effect transistor and the second field effect transistor to work in a linear region.
Wherein, the resistance R of the semiconductor bonding wire satisfies the following relational expression: r ═ R0·[1+TC(T-T0)](ii) a Wherein R is0Is at a temperature T0A resistance of the semiconductor bonding wire.
In the technical scheme of the embodiment of the invention, the temperature coefficient compensation circuit of the semiconductor bonding wire comprises an equivalent temperature control resistance module and a voltage-controlled current module, wherein the equivalent temperature control resistance module comprises a current source, a first field effect transistor, a second field effect transistor and a first operational amplifier, and the voltage-controlled current module comprises a second operational amplifier and a third field effect transistor; through the construction of the compensation circuit and the selection of the circuit parameters, the output current of the existing current mode power control circuit added with the compensation circuit is irrelevant to the temperature and only relevant to the control signal Vramp, so that the problem that the output power of the power amplifier is reduced along with the rise of the temperature due to the fact that the semiconductor bonding wire is used as the detection resistor is solved, the temperature coefficient of the semiconductor bonding wire is compensated, and the accuracy of power control is improved.
Drawings
FIG. 1 is a schematic circuit diagram of a temperature coefficient compensation circuit for a semiconductor bonding wire according to an embodiment of the present invention;
FIG. 2 is a circuit diagram of a current mode power control circuit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a position of a temperature coefficient compensation circuit of a semiconductor bonding wire accessing a current mode power control circuit according to an embodiment of the present invention;
fig. 4 is a schematic circuit diagram of a current source of a temperature coefficient compensation circuit for a semiconductor bonding wire according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Fig. 1 is a schematic circuit diagram of a temperature coefficient compensation circuit of a semiconductor bonding wire according to an embodiment of the present invention, and as shown in fig. 1, the temperature coefficient compensation circuit of a semiconductor bonding wire according to an embodiment of the present invention includes an equivalent temperature-controlled resistance module 101 and a voltage-controlled current module 102, where the equivalent temperature-controlled resistance module 101 includes a current source 103, a first field effect transistor 104, a second field effect transistor 105 and a first operational amplifier 107, and the voltage-controlled current module 102 includes a second operational amplifier 108 and a third field effect transistor 106;
the current source 103 is connected to the drain of the first field effect transistor 104, the gate of the first field effect transistor 104 is connected to the gate of the second field effect transistor 105, the drain of the second field effect transistor 105 is connected to the source of the third field effect transistor 106, and the drain of the third field effect transistor 106 is used as the output end of the compensation circuit; the output end of the compensation circuit is input to the current mode power control circuit; the source of the first field effect transistor 104 and the source of the second field effect transistor 105 are grounded; the output end of the first operational amplifier 107 is connected with the grid electrode of the first or the second field effect transistor, and a first reference voltage V is applied to the first operational amplifier 107ref1And the first reference voltage Vref1A reference current value I of the reference current generated by the current source 103th0Satisfies the relationship: vref1/Ith0＝R2/m＝Ron(ii) a And is
Setting circuit parameter TC of the current source 103iAnd satisfies the following circuit parameters k and m: TC ═ TCi·k·m；
Wherein R is2Is the resistance of a resistor connected in series with the source of the FET of the conventional current mode power control circuit to ground, i.e., R in FIG. 22(ii) a m is a set proportional coefficient of resistance, RonIs the on-resistance of the first FET 104, and TC is the temperature coefficient of the semiconductor bonding wire, TCiIs the temperature coefficient of the reference current.
In the embodiment of the present invention, as shown in fig. 4, the current sources include at least one first current source and at least one second current source; the at least one first current source is connected in parallel with the at least one second current source; the output current of the at least one first current source is proportional to absolute temperature, and the first current sourceOutput current value I of current sourcePTATThe following relation is satisfied: i isPTAT＝Ith0·TCiT; wherein T is the absolute temperature;
as shown in fig. 2, the current mode power control circuit of the embodiment of the present invention operates as follows:
1. the output power of the current mode power control circuit needs to be in a positive correlation with the voltage value of the control signal Vramp.
2. Operational amplifier OP1, field effect transistor M1Resistance R2A voltage-current conversion circuit is formed, and M flows through1Current of drain Im1＝Vramp/R2。
3. Operational amplifier OP2, power tube Q1 and current detection resistor R3A power control loop is formed, where a resistor R is detected3Is a semiconductor bonding wire; when the loop is stabilized, the virtual short effect of the operational amplifier OP2 causes the resistor R1And a resistance R3The voltages at both ends are equal, and R1Voltage VR1＝IM1·R1(ii) a Detecting resistance R3Voltage V ofR3＝Icc·R3(ii) a Icc is the DC current flowing through the power tube Q1, and I can be obtainedccAnd the voltage of the control signal Vramp: i isCC＝Vramp·R1/(R2·R3)。
Wherein the temperature characteristic of the semiconductor bonding wire is represented by an order temperature coefficient thereof:
R＝R0·[1+TC(T-T0)]
wherein R is0Is at a temperature equal to T0The resistance at time, TC is the temperature coefficient, and R is the resistance at temperature, T.
As shown in FIG. 1, the current source 103 provides a current having a temperature coefficient TCiReference current Ith，IthThe relationship with temperature T is:
Ith＝Ith0·[TCi·(T-T0)]
the reference current IthA PTAT power proportional to absolute temperature can be usedThe current is subtracted from a constant current.
Vref1The voltage value at this point is a first reference voltage, which is lower, and it is necessary to ensure that the first fet 104 and the second fet 105 are controlled to operate in a linear region;
Vref2is a second reference voltage, Vref2Proportional to the voltage of the control signal Vramp in FIG. 1, i.e. Vref2K Vramp, where k is the design scaling factor;
output current IoutThe VN node in fig. 3 is accessed.
The specific principle of the temperature coefficient compensation circuit of the semiconductor bonding wire provided by the embodiment of the invention is as follows:
as shown in fig. 1, the equivalent temperature-controlled resistance module 101 functions to make the second fet 105 appear as an equivalent resistance with temperature coefficient of the circuit; in combination with the second reference voltage V appliedref2The circuit generates a voltage-controlled current IoutSpecifically, as shown in fig. 1 and 2, the first field effect transistor 104 and the second field effect transistor 105 are designed to operate in a linear region, and the on-resistance R of the second field effect transistor 105 can be obtained according to the current characteristics of the field effect transistor operating in the linear regionon＝Vds/Ids＝Vref1/Ith(ii) a Therefore, the output current of the temperature coefficient compensation circuit is Iout＝Vref2/Ron＝k·Vramp·Ith/Vref1；
Thus, the output current I of the existing current mode power control circuit is obtainedccSuperimposing the output current I of the compensation circuitoutThen, the following steps are carried out:
the above formula is developed to obtain:
into R3And IthThe temperature coefficient expression of (a) is obtained:
by design Vref1And Ith0So that the equivalent on-resistance R of the field effect transistor in the linear regiononAnd R2In proportion, namely: vref1/Ith0＝Ron＝R2(ii)/m; wherein m is the proportionality coefficient of resistance; substituting the expression into IccCan be found from the expression of:
to offset the temperature coefficient of the semiconductor bonding wire, so that IccIndependent of the temperature T, the above equation only needs to satisfy the condition:
[1+TC(T-T0)]＝{1+k·m·[TCi(T-T0)]}
the conditions under which the above equation is always true are:
TC＝TCi·k·m
thus by selecting the circuit parameter TCiK, m so that the above equation holds, I can be madeccBecomes a dc current independent of the temperature T and only dependent on the control signal Vramp.
In the examples of the invention, IthThe generation of the current may be achieved in the manner shown in figure 4. In particular, because of the high frequency of the,
Ith＝Ith0·TCi·(T-T0)＝Ith0·TCi·T-Ith0·TCi·T0
thus, a first current source proportional to temperature and a second current source of constant current can be used and connected in series as shown in FIG. 4 to obtain the desired temperature-coefficient current Ith. Wherein, the output current value I of the first current sourcePTAT＝Ith0·TCiT, output current value I of the second current sourceconst＝Ith0·TCi·T0。
According to the temperature coefficient compensation circuit of the semiconductor bonding wire, provided by the embodiment of the invention, the corresponding circuit parameters are selected through the relation formula obtained by derivation of the formula, so that the output current of the existing current mode power control circuit added with the compensation circuit is irrelevant to the temperature and only relevant to the control signal Vramp, the temperature coefficient of the semiconductor bonding wire is compensated, the fluctuation amplitude of the output power of the power amplifier along with the temperature rise is reduced, and the accuracy of power control is improved.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention.
Claims (2)
1. The temperature coefficient compensation circuit of the semiconductor bonding wire is characterized by comprising an equivalent temperature control resistance module and a voltage-controlled current module, wherein the equivalent temperature control resistance module comprises a current source, a first field effect transistor, a second field effect transistor and a first operational amplifier, and the voltage-controlled current module comprises a second operational amplifier and a third field effect transistor;
the current source is connected to the drain electrode of the first field effect transistor, the grid electrode of the first field effect transistor is connected with the grid electrode of the second field effect transistor, the drain electrode of the second field effect transistor is connected with the source electrode of the third field effect transistor, and the drain electrode of the third field effect transistor serves as the output end of the compensation circuit; the output end of the compensation circuit is input to the current mode power control circuit; the source electrode of the first field effect transistor and the source electrode of the second field effect transistor are grounded; the output end of the first operational amplifier is connected with the grid electrode of the first field effect transistor or the second field effect transistor; the output end of the second operational amplifier is connected with the grid electrode of the third field effect transistor;
applying a first parameter to an input of the first operational amplifierA reference voltage, and a voltage value V of the first reference voltageref1A reference current value I of a reference current generated by the current sourceth0Satisfies the relationship: vref1/Ith0＝R2/m＝Ron；
Applying a second reference voltage V to the input of the second operational amplifierref2And satisfies the relation: vref2＝k·Vramp(ii) a Wherein, VrampThe input control voltage of the current mode power control circuit is used, and k is a designed proportionality coefficient; the first field effect transistor and the second field effect transistor work in a linear region;
setting circuit parameters TC of the current sourceiAnd satisfies the following relation between the proportionality coefficient k and the circuit parameter m: TC ═ TCi·k·m；
Wherein R is2The resistance value of a resistor which is connected in series with the source electrode of a field effect tube in the current mode power control circuit and is grounded is adopted, m is a set resistor proportionality coefficient, RonThe on-resistance of the second field effect transistor; TC is the temperature coefficient of the semiconductor bonding wire, TCiIs the temperature coefficient of the reference current; wherein, the resistance R of the semiconductor bonding wire needs to satisfy R ═ R0·[1+TC·(T-T0)](ii) a The current source is also used for providing the temperature coefficient of TCiReference current I ofthThe reference current IthThe relationship with temperature T is: i isth＝Ith0·[TCi·(T-T0)]；T0Is a reference temperature; r0Is at a temperature T0And (c) a resistance value of the semiconductor bonding wire.
2. The temperature coefficient compensation circuit of claim 1, wherein the current source comprises at least one first current source and at least one second current source; the at least one first current source is connected in parallel with the at least one second current source; the output current of the at least one first current source is proportional to absolute temperature, and the output current value I of the first current sourcePTATThe following relation is satisfied: i isPTAT＝Ith0·TCiT; wherein T is the absolute temperature;
the at least one second current source is a constant current source, and the output current value I of the second current sourceconstThe following relation is satisfied: i isconst＝Ith0·TCi·T0And the current value I of the input reference current of the first field effect transistorthiThe following relation is satisfied: i isthi＝IPTAT-Iconst＝Ith0·[TCi·(T-T0)]。
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| CN201711456887.5A CN108153367B (en) | 2017-12-28 | 2017-12-28 | Temperature coefficient compensation circuit of semiconductor bonding wire |
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| JP2000295099A (en) * | 1999-04-02 | 2000-10-20 | Matsushita Electric Ind Co Ltd | Micro wave synthesizer |
| JP2005143079A (en) * | 2003-10-14 | 2005-06-02 | Matsushita Electric Ind Co Ltd | High-frequency power amplifier |
| JP2009253728A (en) * | 2008-04-08 | 2009-10-29 | Panasonic Corp | High-frequency power amplifier |
| US8154345B2 (en) * | 2010-06-03 | 2012-04-10 | Skyworks Solutions, Inc. | Apparatus and method for current sensing using a wire bond |
| CN103969494B (en) * | 2014-04-30 | 2017-07-28 | 广州钧衡微电子科技有限公司 | A kind of current-limiting apparatus of high precision electro current detection circuit and the application circuit |
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Address after: 510663 8th floor, building C2, Chuangxin building, No. 182, Kexue Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Guangzhou Huizhi Microelectronics Co.,Ltd. Address before: 510663 unit c3-802, innovation building, 182 science Avenue, Science City, Guangzhou high tech Industrial Development Zone, Guangdong Province Patentee before: SMARTER MICROELECTRONICS (GUANG ZHOU) Co.,Ltd. |