CN108130591A - One kind mixes dysprosium luteium oxide visible waveband laser crystal and preparation method thereof - Google Patents
One kind mixes dysprosium luteium oxide visible waveband laser crystal and preparation method thereof Download PDFInfo
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- CN108130591A CN108130591A CN201711287883.9A CN201711287883A CN108130591A CN 108130591 A CN108130591 A CN 108130591A CN 201711287883 A CN201711287883 A CN 201711287883A CN 108130591 A CN108130591 A CN 108130591A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
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Abstract
The present invention relates to one kind to mix dysprosium luteium oxide visible waveband laser crystal and preparation method thereof, and the chemical formula of the crystal is (DyxLu1‑x)2O3, the wherein value range of x is 0.00001~0.3, cell parameter 1.0411nm, density 9.42g/cm3.Dysprosium oxidation lutecium laser crystal is mixed using floating zone method growth, growth atmosphere is high-purity argon.Compared with prior art, the present invention mixes dysprosium oxidation lutecium laser crystal and can be used that InGaN is laser diode-pumped, and with larger yellow light fluorescence branching ratios, be expected to realize the high efficiency yellow output of visible waveband.The invention can be widely applied to medical treatment, communication, microscope, biomedicine etc..
Description
Technical field
The present invention relates to laser crystal, particularly one kind to mix dysprosium luteium oxide visible waveband laser crystal and preparation method thereof,
Belong to fluorescent material technical field, it is laser diode-pumped that it is suitable for InGaN.
Background technology
In recent years, it is seen that the rear-earth-doped laser crystal material of wave band especially in yellow band, is widely used in many
Technical field, such as medical treatment, communication, microscope and biomedicine.In order to obtain yellow light laser, Raman laser, frequency multiplication semiconductor
The certain methods such as laser have grown up.However, these methods have the shortcomings that some are apparent, such as expensive, construction
Complicated and indirect yellow emission.Therefore, a rear-earth-doped laser crystal that can realize directly transmitting yellow light is found
Material is extremely urgent.
In lanthanide series, trivalent dysprosium (Dy3+) due to its from4F9/2It arrives6H13/2Yellow light energy level transition so that Dy3+Ion
As the potential rare earth ion of a transmitting yellow light.It is many to report the laser activity exhibition to mixing dysprosium laser material yellow band
Research, such as Dy are opened:LiSrPO4、Dy:LiGd(MoO4)2、Dy:GdVO4And Dy:LaPO4.In addition, InGaN laser diodes
Development greatly enhances the luminous efficiency and power for mixing dysprosium laser material.It is 2012, laser diode-pumped by InGaN
Dy:YAG crystal obtains launch wavelength as 583nm, and the yellow light that mean power is 150mW exports, slope efficiency 12%.
2014, using the laser diode-pumped Dy of InGaN, Tb:LiLuF4Crystal realizes 55mW at 578nm, Slop efficiency is
13.4% continuous laser output.
Recently, luteium oxide matrix is due to having higher thermal conductivity and thermal stability to attract a large amount of concerns.Luteium oxide is brilliant
Body belongs to the bixbyite structure that cubic space group is Ia3.It is one huge to growth however, since its fusing point is high
Challenge, therefore about the Lu of high optical quality2O3Crystal report is less.Up to the present, many methods are used to attempt growth
Lu2O3Crystal, for example, heat-exchanging method, czochralski method, laser heated pedestal method, Bridgman method and micro- glass tube down-drawing.Domestic surgery
Family has carried out a large amount of research, such as Tm to the spectrum property of luteium oxide host doped rare earth ion3+、Er3+And Yb3+Doping
Lu2O3Crystal；Nd3+The Lu of doping2O3Crystalline ceramics；Tm3+、Tb3+、Pr3+、Sm3+、Er3+And Ho3+The Lu of doping2O3Fluorescent powder.
However, related Dy3+Adulterate Lu2O3There is no relevant reports for the preparation of crystal float-zone method and the research of spectrum property.
Invention content
Mixing dysprosium luteium oxide it is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide one kind can
See wave band of laser crystal and preparation method thereof.
The purpose of the present invention can be achieved through the following technical solutions：One kind mixes dysprosium luteium oxide visible waveband laser crystalline substance
Body, which is characterized in that the chemical formula of the crystal is (DyxLu1-x)2O3, the wherein value range of x is 0.00001~0.3, brilliant
Born of the same parents' parameter is 1.0411nm, density 9.42g/cm3。
The above-mentioned preparation method for mixing dysprosium luteium oxide visible waveband laser crystal, which is characterized in that given birth to using floating zone method
Long, this method includes the following steps：
(1) initial feed uses Dy of the purity for 4N2O3And Lu2O3, after the value for selecting x, according to mixing dysprosium luteium oxide laser
Crystal molecule formula (DyxLu1-x)2O3, according to molar ratio x：(1-x) accurate weighing carries out dispensing；
(2) after raw material is sufficiently mixed in agate mortar uniformly, it is pressed into using hydraulic press rodlike, oil pressure pressure is
220MPa, duration 3min, is then placed in high-temperature annealing furnace, 1780 DEG C of high temperature sinterings 24 hours；
(3) charge bar is taken out, is fitted into the stove of floating region and prepares growth, loading furnace process makes upper and lower charge bar be in same vertical line
On；
(4) high purity inert gas is filled with as protective atmosphere, and growth step includes：Temperature increasing for melting materials, docking, necking down, shouldering,
Dysprosium luteium oxide monocrystalline is mixed in isodiametric growth and ending, then slow cooling to room temperature, acquisition.
Further, the size of charge bar up and down described in step (3) is 4.5 × 35mm of φ3.It is unfavorable if charge bar is oversized
In the growth preferable crystal of mass, it is unfavorable for handling out sample progress spectrum test if charge bar is undersized.
Further, the high purity inert gas described in step (4) is argon gas.On the one hand argon gas can protect crystal, another
Aspect can form better temperature gradient with thermal field in regulating stove.
Further, the docking described in step (4) refer to when the end of upper and lower charge bar melt to it is full arc-shaped after carry out
Docking.Charge bar end is fully melted, so as to be conducive to improve the crystalline quality of crystal.
Further, the undergauge described in step (4) refers to be reduced to 1.5~2mm.Be conducive to prevent defect from extending to after undergauge
In crystal, crystal quality is improved.
Further, in the growth step described in step (4), growth rate is 1~2mm/h, and rotating speed is 8~12rpm.
Further, isometrical described in step (4) refers to diameter 4mm.Isometrical diameter is similar to charge bar diameter, and growth is brilliant
The relatively simple convenience of body, it is easily operated.
Further, the ending described in step (4) refers to go up stick pulling rate by stopping and reduce power to make to reduce melting zone
The diameter of crystal attenuates be about 1.5~2mm after pull.Crystal diameter pulls after attenuating, and is conducive to avoid stress excessive and make
The defects of into crystal cleavage.
Compared with prior art, the method have the characteristics that：
1. the dysprosium of mixing that a kind of high optical quality is grown using float-zone method aoxidizes lutecium laser crystal, InGaN laser can be used
Diode pumping realizes that efficient yellow light directly exports.
2. the heating unit of floating region stove used in float-zone method uses xenon lamp, fast, efficient, temperature control of not only generating heat
Response is fast, and does not need to be in direct contact crystal, and clean environment can be provided for crystal growth.
Description of the drawings
Attached drawing 1 is floating zone method schematic device；
Attached drawing 2 is (Dy0.03Lu0.97)2O3The X-ray powder diffraction pattern of crystal；
Attached drawing 3 is (Dy0.03Lu0.97)2O3The room temperature absorption coefficient spectrogram of crystal；
Attached drawing 4 is (Dy0.03Lu0.97)2O3The Emission at Room Temperature intensity spectrum figure of crystal.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1：
By the Dy that purity is 4N2O3And Lu2O3Initial powder is according to molecular formula (DyxLu1-x)2O3Precise is carried out, wherein
X=0.03.By load weighted powder in agate mortar after mixing, with hydraulic press under 220MPa pressure binder 3min,
It is pressed into rodlike.It is then placed in high-temperature annealing furnace, 1780 DEG C of high temperature sinterings 24 hours.Charge bar is taken out, is packed into floating region stove
Middle to prepare growth, loading furnace process will ensure that charge bar is on same vertical line up and down.After shove charge, it is filled with high-purity argon gas conduct
Protective atmosphere is heated using xenon lamp, and growth step includes：Temperature increasing for melting materials, docking, necking down, shouldering, isodiametric growth and ending,
By this growth stringent control of flow, in crystal growing process, when the end of upper and lower charge bar melt to it is full it is arc-shaped after carry out pair
It connects, undergauge is reduced to 3mm, growth rate 3mm/h, and rotating speed is 8~12rpm, isometrical a diameter of 4mm, during ending, passes through stopping
Upper stick pulling rate gradually pulls.Room temperature is finally cooled to, one is obtained and mixes dysprosium luteium oxide monocrystalline, it is cracking.
Embodiment 2：
By the Dy that purity is 4N2O3And Lu2O3Initial powder is according to molecular formula (DyxLu1-x)2O3Precise is carried out, wherein
X=0.03.By load weighted powder in agate mortar after mixing, with hydraulic press under 220MPa pressure binder 3min,
It is pressed into rodlike.It is then placed in high-temperature annealing furnace, 1780 DEG C of high temperature sinterings 24 hours.Charge bar is taken out, is packed into floating region stove
Middle to prepare growth, as shown in Figure 1, for floating zone method schematic device, including upper rotating bar 1, loading rod 2, quartz ampoule 3 melts
Area 4, unloading rod 5, lower rotating bar 6, xenon lamp 7, condenser 8, loading rod 2 are mounted in upper rotating bar 1, and unloading rod 5 is mounted on down
Rotating bar 6, and be placed in quartz ampoule 3, melting zone 4 is formed between loading rod 2 and unloading rod 5,7 He of xenon lamp is set outside quartz ampoule 3
Condenser 8, loading furnace process will ensure that charge bar is on same vertical line up and down.After shove charge, high-purity argon gas is filled with as guarantor
Atmosphere is protected, is heated using xenon lamp 7, growth step includes：Temperature increasing for melting materials, docking, necking down, shouldering, isodiametric growth and ending, are pressed
This growth stringent control of flow, in crystal growing process, when the end of upper and lower charge bar melt to it is full it is arc-shaped after docked,
Undergauge is reduced to 2mm, growth rate 2mm/h, and rotating speed is 8~12rpm, isometrical a diameter of 4mm, during ending, by stopping
Stick pulling rate and reduce power makes the diameter of crystal attenuate to be pulled after 2mm to reduce melting zone.Last slow cooling is obtained to room temperature
One is mixed dysprosium luteium oxide monocrystalline, is not cracked, optical quality is preferable.
Referring to attached drawing 2, it is to grow (Dy by this embodiment scheme0.03Lu0.97)2O3Crystal prototype X-ray powder diffraction
Collection of illustrative plates occurs without miscellaneous peak, and it is pure phase to show obtained crystal.
Referring to attached drawing 3, it is to grow (Dy by this embodiment scheme0.03Lu0.97)2O3Crystal prototype absorption coefficient collection of illustrative plates,
Absorption peak wherein at 446nm is very suitable for being pumped using InGaN laser diodes.
Referring to attached drawing 4, it is to grow (Dy by this embodiment scheme0.03Lu0.97)2O3Crystal prototype launching light spectrogram,
Yellow emission peak intensity at 574nm is apparently higher than other emission peaks, illustrates that the crystalline material is very beneficial for yellow light output.
Embodiment 3：
By the Dy that purity is 4N2O3And Lu2O3Initial powder is according to molecular formula (DyxLu1-x)2O3Precise is carried out, wherein
X=0.005.By load weighted powder in agate mortar after mixing, with hydraulic press under 220MPa pressure binder 3min,
It is pressed into rodlike.It is then placed in high-temperature annealing furnace, 1780 DEG C of high temperature sinterings 24 hours.Charge bar is taken out, is packed into floating region stove
Middle to prepare growth, loading furnace process will ensure that charge bar is on same vertical line up and down.After shove charge, it is filled with high-purity argon gas conduct
Protective atmosphere is heated using xenon lamp, and growth step includes：Temperature increasing for melting materials, docking, necking down, shouldering, isodiametric growth and ending,
By this growth stringent control of flow, in crystal growing process, when the end of upper and lower charge bar melt to it is full it is arc-shaped after carry out pair
It connects, undergauge is reduced to 1.8mm, growth rate 1.9mm/h, and rotating speed is 8~12rpm, isometrical a diameter of 4mm, during ending, passes through
Stick pulling rate and reduce power makes the diameter of crystal attenuate to be pulled after 1.8mm to reduce melting zone in stopping.Last slow cooling is extremely
Room temperature obtains one and mixes dysprosium luteium oxide monocrystalline, do not crack, optical quality is preferable.
Its structural behaviour, absorption coefficient and emissive porwer collection of illustrative plates are similar to Example 2.
Embodiment 4：
By the Dy that purity is 4N2O3And Lu2O3Initial powder is according to molecular formula (DyxLu1-x)2O3Precise is carried out, wherein
X=0.0003.By load weighted powder in agate mortar after mixing, with hydraulic press under 220MPa pressure binder
3min is pressed into rodlike.It is then placed in high-temperature annealing furnace, 1780 DEG C of high temperature sinterings 24 hours.Charge bar is taken out, is packed into floating
Prepare growth in area's stove, loading furnace process will ensure that charge bar is on same vertical line up and down.After shove charge, it is filled with high-purity argon gas
It as protective atmosphere, is heated using xenon lamp, growth step includes：Temperature increasing for melting materials, docking, necking down, shouldering, isodiametric growth and receipts
Tail, by this growth stringent control of flow, in crystal growing process, when the end of upper and lower charge bar melt to it is full it is arc-shaped after progress
Docking, undergauge are reduced to 2mm, growth rate 1.5mm/h, and rotating speed is 8~12rpm, isometrical a diameter of 4mm, during ending, pass through
Stick pulling rate and reduce power makes the diameter of crystal attenuate to be pulled after 1.6mm to reduce melting zone in stopping.Last slow cooling is extremely
Room temperature obtains one and mixes dysprosium luteium oxide monocrystalline, do not crack, optical quality is preferable.
Its structural behaviour, absorption coefficient and emissive porwer collection of illustrative plates are similar to Example 2.
Embodiment 5：
By the Dy that purity is 4N2O3And Lu2O3Initial powder is according to molecular formula (DyxLu1-x)2O3Precise is carried out, wherein
X=0.00001.By load weighted powder in agate mortar after mixing, with hydraulic press under 220MPa pressure binder
3min is pressed into rodlike.It is then placed in high-temperature annealing furnace, 1780 DEG C of high temperature sinterings 24 hours.Charge bar is taken out, is packed into floating
Prepare growth in area's stove, loading furnace process will ensure that charge bar is on same vertical line up and down.After shove charge, it is filled with high-purity argon gas
It as protective atmosphere, is heated using xenon lamp, growth step includes：Temperature increasing for melting materials, docking, necking down, shouldering, isodiametric growth and receipts
Tail, by this growth stringent control of flow, in crystal growing process, when the end of upper and lower charge bar melt to it is full it is arc-shaped after progress
Docking, undergauge are reduced to 1.6mm, growth rate 1.8mm/h, and rotating speed is 8~12rpm, isometrical a diameter of 4mm, during ending, lead to
It crosses the upper stick pulling rate of stopping and reduce power makes the diameter of crystal attenuate to be pulled after 1.5mm to reduce melting zone.Last slow cooling
To room temperature, obtain one and mix dysprosium luteium oxide monocrystalline, do not crack, optical quality is preferable.
Its structural behaviour, absorption coefficient and emissive porwer collection of illustrative plates are similar to Example 2.
Embodiment 6：
By the Dy that purity is 4N2O3And Lu2O3Initial powder is according to molecular formula (DyxLu1-x)2O3Precise is carried out, wherein
X=0.3.By load weighted powder in agate mortar after mixing, with hydraulic press under 220MPa pressure binder 3min, will
It is pressed into rodlike.It is then placed in high-temperature annealing furnace, 1780 DEG C of high temperature sinterings 24 hours.Charge bar is taken out, is fitted into the stove of floating region
Prepare growth, loading furnace process will ensure that charge bar is on same vertical line up and down.After shove charge, high-purity argon gas is filled with as guarantor
Atmosphere is protected, is heated using xenon lamp, growth step includes：Temperature increasing for melting materials, docking, necking down, shouldering, isodiametric growth and ending, are pressed
This growth stringent control of flow, in crystal growing process, when the end of upper and lower charge bar melt to it is full it is arc-shaped after docked,
Undergauge is reduced to 1.7mm, growth rate 1.8mm/h, and rotating speed is 8~12rpm, isometrical a diameter of 4mm, during ending, by stopping
It only goes up stick pulling rate and reduce power makes the diameter of crystal attenuate to be pulled after 1.6mm to reduce melting zone.Last slow cooling is to room
Temperature obtains one and mixes dysprosium luteium oxide monocrystalline, do not crack, optical quality is preferable.
Its structural behaviour, absorption coefficient and emissive porwer collection of illustrative plates are similar to Example 2.
Claims (9)
1. one kind mixes dysprosium luteium oxide visible waveband laser crystal, which is characterized in that the chemical formula of the crystal is (DyxLu1-x)2O3,
Wherein the value range of x is 0.00001~0.3, cell parameter 1.0411nm, density 9.42g/cm3。
2. a kind of preparation method as described in claim 1 for mixing dysprosium luteium oxide visible waveband laser crystal, which is characterized in that adopt
It is grown with floating zone method, this method includes the following steps：
(1) initial feed uses Dy of the purity for 4N2O3And Lu2O3, select x value after, according to mix dysprosium oxidation lutecium laser crystal
Molecular formula (DyxLu1-x)2O3, according to molar ratio x：(1-x) accurate weighing carries out dispensing；
(2) after raw material is sufficiently mixed in agate mortar uniformly, it is pressed into using hydraulic press rodlike, oil pressure pressure is
220MPa, duration 3min, is then placed in high-temperature annealing furnace, 1780 DEG C of high temperature sinterings 24 hours；
(3) charge bar is taken out, is fitted into the stove of floating region and prepares growth, loading furnace process makes upper and lower charge bar be on same vertical line；
(4) high purity inert gas is filled with as protective atmosphere, and growth step includes：It is temperature increasing for melting materials, docking, necking down, shouldering, isometrical
Dysprosium luteium oxide monocrystalline is mixed in growth and ending, then slow cooling to room temperature, acquisition.
3. the preparation method according to claim 2 for mixing dysprosium luteium oxide visible waveband laser crystal, which is characterized in that step
(3) size of charge bar up and down described in is 4.5 × 35mm of φ3。
4. the preparation method according to claim 2 for mixing dysprosium luteium oxide visible waveband laser crystal, which is characterized in that step
(4) high purity inert gas described in is argon gas.
5. the preparation method according to claim 2 for mixing dysprosium luteium oxide visible waveband laser crystal, which is characterized in that step
(4) docking described in refer to when the end of upper and lower charge bar melt to it is full it is arc-shaped after docked.
6. the preparation method according to claim 2 for mixing dysprosium luteium oxide visible waveband laser crystal, which is characterized in that step
(4) undergauge described in refers to be reduced to 1.5~2mm.
7. the preparation method according to claim 2 for mixing dysprosium luteium oxide visible waveband laser crystal, which is characterized in that step
(4) in the growth step described in, growth rate is 1~2mm/h, and rotating speed is 8~12rpm.
8. the preparation method according to claim 2 for mixing dysprosium luteium oxide visible waveband laser crystal, which is characterized in that step
(4) isometrical described in refers to diameter 4mm.
9. the preparation method according to claim 2 for mixing dysprosium luteium oxide visible waveband laser crystal, which is characterized in that step
(4) ending described in refers to that by stopping upper stick pulling rate and reducing power to reduce melting zone the diameter of crystal is made to attenuate be about 1.5
It is pulled after~2mm.
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| CN201711287883.9A CN108130591A (en) | 2017-12-07 | 2017-12-07 | One kind mixes dysprosium luteium oxide visible waveband laser crystal and preparation method thereof |
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| CN201711287883.9A CN108130591A (en) | 2017-12-07 | 2017-12-07 | One kind mixes dysprosium luteium oxide visible waveband laser crystal and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108930062A (en) * | 2018-07-18 | 2018-12-04 | 中国科学院福建物质结构研究所 | A kind of crystalline material for realizing the output of yellow light laser of activated by dysprosium |
| WO2021004078A1 (en) * | 2019-07-11 | 2021-01-14 | 南京同溧晶体材料研究院有限公司 | Praseodymium-doped gadolinium scandate visible waveband laser crystal and preparation method therefor |
| CN112853489A (en) * | 2021-01-06 | 2021-05-28 | 安徽工业大学 | Rare earth ion doped sesquioxide visible laser crystal material |
| CN115821387A (en) * | 2022-12-29 | 2023-03-21 | 广西大学 | Method for growing ultrahigh-melting-point rare earth doped hafnium oxide optical single crystal |
-
2017
- 2017-12-07 CN CN201711287883.9A patent/CN108130591A/en active Pending
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| COLIN D. MCMILLEN ET AL.: "Crystal growth and phase stability of Ln:Lu2O3 (Ln=Ce, Pr,Nd,Sm,Eu, Tb, Dy, Ho, Er, Tm, Yb) in a higher-temperature hydrothermal regime", 《JOURNAL OF CRYSTAL GROWTH》 * |
| LIANGZHEN HAO ET AL.: "Spectroscopy and laser performance of Nd:Lu2O3 crystal", 《OPTICS EXPRESS》 * |
| 武安华等: "光学浮区法生长技术及其在晶体生长中的应用", 《功能材料》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108930062A (en) * | 2018-07-18 | 2018-12-04 | 中国科学院福建物质结构研究所 | A kind of crystalline material for realizing the output of yellow light laser of activated by dysprosium |
| WO2021004078A1 (en) * | 2019-07-11 | 2021-01-14 | 南京同溧晶体材料研究院有限公司 | Praseodymium-doped gadolinium scandate visible waveband laser crystal and preparation method therefor |
| CN112853489A (en) * | 2021-01-06 | 2021-05-28 | 安徽工业大学 | Rare earth ion doped sesquioxide visible laser crystal material |
| CN115821387A (en) * | 2022-12-29 | 2023-03-21 | 广西大学 | Method for growing ultrahigh-melting-point rare earth doped hafnium oxide optical single crystal |
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