CN108128749B - Thin film sheet for eddy current micro-pressure sensor and preparation method thereof - Google Patents
Thin film sheet for eddy current micro-pressure sensor and preparation method thereof Download PDFInfo
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- CN108128749B CN108128749B CN201711394208.6A CN201711394208A CN108128749B CN 108128749 B CN108128749 B CN 108128749B CN 201711394208 A CN201711394208 A CN 201711394208A CN 108128749 B CN108128749 B CN 108128749B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00373—Selective deposition, e.g. printing or microcontact printing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
- G01L13/06—Devices or apparatus for measuring differences of two or more fluid pressure values using electric or magnetic pressure-sensitive elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
Abstract
The invention discloses a thin film sheet for an eddy current micro-pressure sensor, which comprises a silicon substrate and a non-conductive membrane, wherein the non-conductive membrane is electrostatically bonded on the silicon substrate, a window is arranged on the silicon substrate, and a conductive thin film is sputtered on the outer side of the non-conductive membrane and at the position opposite to the window. The film sheet has the advantages of simple structure, uniform thickness and the like. The invention also discloses a preparation method of the film sheet, which comprises the following steps: s01, preparing a monocrystalline silicon wafer and a non-conductive diaphragm, and respectively polishing two sides; s02, carrying out electrostatic bonding on the double-sided polished monocrystalline silicon wafer and the non-conductive film to form a bonding sheet; s03, corroding a window on the monocrystalline silicon piece and stopping on the non-conductive film piece, wherein the monocrystalline silicon piece forms a silicon substrate; and S04, sputtering a conductive film at the position of the window outside the non-conductive film to form a conductive film. The preparation method is simple and convenient to operate and easy to realize.
Description
Technical Field
The invention mainly relates to the technical field of pressure measurement, in particular to a thin film sheet for an eddy current micro-pressure sensor and a preparation method thereof.
Background
In the current eddy current micro-pressure sensor, a sensitive diaphragm adopts a metal corrugated diaphragm, when differential pressure acts on the metal corrugated diaphragm, the center of the diaphragm can move up and down, the distance between the diaphragm and an eddy current exciting coil changes, and the change of the distance is finally converted into the change of an electric signal. The method utilizes the metal corrugated membrane as a sensitive element, but the thickness of the metal corrugated membrane is not easy to control, residual stress and installation stress are easy to generate, the defect of elastic hysteresis exists, the long-term stability and the measurement precision are influenced, and the calibration period is short. In addition, the micro-pressure sensor adopting silicon piezoresistive effect measures pressure by using the elastic modulus and piezoresistive effect of silicon, the sensitivity of the sensor is low, and the diaphragm thickness is difficult to control.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the technical problems in the prior art, the invention provides the thin film sheet for the eddy current micro-pressure sensor, which has the advantages of simple structure, reliable measurement and high precision, and correspondingly provides the preparation method which is simple and convenient to operate and easy to realize.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
a thin film for an eddy current micro-pressure sensor comprises a silicon substrate and a non-conductive membrane, wherein the non-conductive membrane is electrostatically bonded on the silicon substrate, a window is arranged on the silicon substrate, and a conductive thin film is sputtered on the outer side of the non-conductive membrane and at the position opposite to the window.
As a further improvement of the above technical solution:
and a conductive contact ring is sputtered on the peripheral side of the non-conductive membrane.
A welding disc is arranged on the conductive contact ring, and a lead is arranged on the welding disc.
The non-conductive membrane is SiO2And (3) slicing.
The conductive film is an Au layer.
The invention also discloses a preparation method of the thin film sheet for the eddy current micro-pressure sensor, which comprises the following steps:
s01, preparing a monocrystalline silicon wafer and a non-conductive diaphragm, and respectively polishing two sides;
s02, carrying out electrostatic bonding on the double-sided polished monocrystalline silicon wafer and the non-conductive film to form a bonding sheet;
s03, corroding a window on the monocrystalline silicon piece and stopping on the non-conductive film piece, wherein the monocrystalline silicon piece forms a silicon substrate;
and S04, sputtering a conductive film at the position of the window outside the non-conductive film to form a conductive film.
As a further improvement of the above technical solution:
after step S04, the film is etched to form islands, wherein the middle circular portion is the conductive film and the outer ring portion is the conductive contact ring.
The method also comprises the steps of preparing a bonding pad and a lead on the conductive film, and the specific process comprises the following steps:
s05, masking the conductive contact ring and photoetching a contact hole;
s06, sputtering a Ni layer on the contact hole;
s07, bonding an Au layer on the Ni layer through a mask and photoetching to form a bonding pad;
and S08, welding a lead with an insulating layer on the pad.
In step S02, the non-conductive film on the bonding sheet is thinned to a predetermined thickness and polished.
The film is an Au layer.
Compared with the prior art, the invention has the advantages that:
the thin film sheet for the eddy current micro-pressure sensor is simple in structure and uniform in thickness by electrostatically bonding the non-conductive thin film sheet on the silicon substrate and sputtering the conductive thin film at the position, which is opposite to the window, on the outer side of the non-conductive thin film sheet. The preparation method is simple and convenient to operate and easy to realize.
Drawings
FIG. 1 is a cross-sectional view of a pellicle according to the present invention.
FIG. 2 is a top view of a film sheet of the present invention.
Fig. 3 is a schematic view of the sensor structure of the present invention.
The reference numbers in the figures denote: 1. a mounting seat; 2. a bolt; 3. a seal member; 4. a flat gasket; 5. a gland; 6. an excitation coil; 7. a coil lead; 8. a measuring coil; 9. a lead wire; 10. a film sheet; 11. a conductive contact ring; 12. a non-conductive diaphragm; 13. a silicon substrate; 14. a conductive film; 15. a pad; 16. a pressure guide hole; 17. and (4) mounting the groove.
Detailed Description
The invention is further described below with reference to the figures and the specific embodiments of the description.
As shown in FIGS. 1 and 2, the thin film for the eddy current micro-pressure sensor of the present embodiment includes a silicon substrate 13 and a non-conductive membrane 12 (e.g. SiO)2Sheet), the non-conductive film 12 is electrostatically bonded on the silicon substrate 13, a window is arranged on the silicon substrate 13, and the conductive film 14 is sputtered on the outer side of the non-conductive film 12 and at the position opposite to the window. In which a conductive contact ring 11 is sputtered on the peripheral side of the non-conductive membrane 12. The conductive film 14 and the conductive contact ring 11 are Au layers (other conductive layers are also possible), and a certain distance exists between the conductive film 14 and the conductive contact ring 11, so that the fastening force of the conductive contact ring 11 and other components does not influence the measurement of the conductive film 14. The thin film sheet for the eddy current micro-pressure sensor is simple in structure and uniform in thickness by electrostatically bonding the non-conductive membrane 12 on the silicon substrate 13 and sputtering the conductive thin film 14 at the position, which is on the outer side of the non-conductive membrane 12 and is opposite to the window.
In this embodiment, the conductive contact ring 11 is provided with the bonding pad 15, the bonding pad 15 is provided with the lead 9, the lead 9 can measure the contact resistance between the conductive contact ring 11 and other components, and since the contact resistance is related to the fastening force between the conductive contact ring 11 and other components, the control of the fastening force can be realized through the measurement of the contact resistance.
As shown in fig. 3, the present invention also discloses the application of the thin film sheet 10 on the eddy current micro-pressure sensor: the sensor specifically comprises an installation seat 1, a thin film sheet 10 and a metal gland 5, wherein a pressure guide hole 16 is formed in the installation seat 1, an installation groove 17 is formed in the gland 5, the gland 5 is fastened on the installation seat 1, the installation groove 17 is opposite to the pressure guide hole 16, the thin film sheet 10 is installed in the installation groove 17, the periphery of the thin film sheet is clamped and fixed with the installation seat 1 through the gland 5, and an excitation coil 6 is arranged at a position, opposite to the thin film sheet 10, of the gland 5 and used for generating a high-frequency excitation signal; a measuring coil 8 is arranged between the exciting coil 6 and the film sheet 10 and is used for detecting the alternation of the magnetic field, and the measuring coil 8 and the exciting coil 6 are connected out through a coil lead 7. According to the silicon film eddy current micro-pressure sensor, the periphery of the thin film sheet 10 is fixed through clamping and matching between the pressing cover 5 and the mounting seat 1, the thin film sheet 10 is guaranteed to be opposite to the measuring coil 8 and is not influenced by other external forces, and therefore measuring accuracy is improved.
Specifically, a wire hole is formed in the gland 5, and the lead wire 9 penetrates through the wire hole in the gland 5 and is used for detecting the contact resistance between the gland 5 and the conductive contact ring 11 so as to adjust the fastening force between the gland 5 and the mounting base 1. In addition, a sealing groove is arranged at the position where the mounting seat 1 contacts with the peripheral side of the thin film piece 10, and a sealing element 3 (such as an O-shaped sealing ring) is arranged in the sealing groove. In addition, a rubber flat gasket 4 is arranged between the mounting seat 1 and the gland 5, and the mounting seat 1 and the gland 5 are fastened through bolts 2 or screws. Wherein the O-ring and the rubber flat gasket 4 are used for sealing and supporting. When bolt 2 fastens, when gland 5 and electrically conductive contact ring 11 contact, measure the contact resistance between gland 5 and the electrically conductive contact ring 11 through lead wire 9, along with the increase of 2 fastening forces of bolt, contact resistance can constantly change, through selecting reasonable contact resistance (like 10m omega ~50m omega), can guarantee to have suitable fastening force between pellicle membrane 10 and the gland 5 to guarantee that the contact is good, and can not produce great fastening force. Because too large a fastening will result in SiO2The sheet creates stress and the measurement of the conductive film 14 affects the long term stability of the sensor.
The invention also correspondingly discloses a preparation method of the film sheet, which comprises the following detailed steps:
(1) preparing a silicon single crystal wafer and SiO2Respectively polishing the two sides of the wafer;
(2) a crystal silicon wafer with two polished sides and SiO2Carrying out electrostatic bonding on the sheet to form a bonded sheet;
(3) SiO on the pair bonding sheet2Thinning, and polishing after the thickness is reduced to the measuring range;
(4) carrying out masking, photoetching and wet etching on the monocrystalline silicon wafer to form a square window, wherein the etching is stopped at SiO2Layer to obtain square SiO2A film in which a single crystal silicon wafer forms a silicon substrate 13;
(5) in SiO2Sputtering a conductive film on the outside of the window of the layer, wherein the film is thinThe film is made of Au, and the thickness of the Au film is 1 um;
(6) carrying out masking, photoetching and wet etching on the film to etch a ring island, wherein the middle circular part is a conductive film 14, and the outer ring part is a conductive contact ring 11;
(7) masking and photoetching a contact hole on the conductive contact ring 11;
(8) sputtering a Ni layer with the thickness of 3um on the contact hole;
(9) continuously bonding the Au layer 2um on the Ni layer through a mask and photoetching to form a bonding pad 15;
(10) welding a 0.3mm lead 9 with an insulating layer on the bonding pad 15;
(11) the film sheet 10 is completed.
Because a mask is arranged on the monocrystalline silicon piece, wet etching is adopted, and SiO is utilized2As a stop layer, the thickness and flatness of the membrane can be precisely controlled. The non-conductive membrane 12 is located at the central part and far away from the periphery, so that the membrane is not easy to damage in the manufacturing process, stress is hardly transferred to the central part, and the long-term stability of the membrane can be ensured. By this method, the nonconductive diaphragm 12 can be made thin and uniform in thickness.
The specific assembling process of the silicon film eddy current micro-pressure sensor comprises the following steps:
1. placing the prepared thin film piece 10 on the mounting seat 1 with the O-shaped sealing ring;
2. installing a rubber flat gasket 4 at other parts of the installation seat 1;
3. mounting a gland 5 with an excitation coil 6 and a measuring coil 8;
4. and adjusting the fastening force of the bolt 2 to control the contact resistance of the gland 5 and the conductive contact ring 11 to be 10-50 m omega, and finishing the assembly.
The specific working principle is as follows: firstly, an AC power supply is provided for the exciting coil 6, and the power supply is arranged in a square SiO2Eddy current is formed on the circular conductive film 14 of the layer, and the measuring coil 8 detects the induced alternating voltage; when pressure is introduced through the pressure introduction hole 16, the square SiO2The layer is deformed, so that the distance between the conductive film 14 and the exciting coil 6 is shortened, the eddy current is changed,the voltage measured by the measuring coil 8 also changes, so that a conversion of the micro-pressure in proportion to the voltage on the measuring coil 8 is accomplished.
Of course, in other embodiments, a hole may be formed in the side surface of the gland 5, and another pressure source may be introduced to the center of the thin film sheet 10 to perform the differential pressure measurement, and the introduced pressure medium is not limited to gas, and may be liquid, so that the liquid-liquid differential pressure measurement, the gas-gas differential pressure measurement, and the liquid-gas differential pressure measurement may be realized.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make numerous possible variations and modifications to the present invention, or modify equivalent embodiments to equivalent variations, without departing from the scope of the invention, using the teachings disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical spirit of the present invention should fall within the protection scope of the technical scheme of the present invention, unless the technical spirit of the present invention departs from the content of the technical scheme of the present invention.
Claims (8)
1. The diaphragm for the eddy current micro-pressure sensor is characterized by comprising a silicon substrate (13) and a non-conductive diaphragm (12), wherein the non-conductive diaphragm (12) is electrostatically bonded on the silicon substrate (13), a window is arranged on the silicon substrate (13), and a conductive film (14) is sputtered on the outer side of the non-conductive diaphragm (12) and at the position opposite to the window;
a conductive contact ring (11) is sputtered on the peripheral side of the non-conductive membrane (12); a certain distance exists between the conductive film (14) and the conductive contact ring (11);
a bonding pad (15) is arranged on the conductive contact ring (11), and a lead (9) is arranged on the bonding pad (15);
the lead (9) is used for measuring the contact resistance between the conductive contact ring (11) and other components, and the control of the fastening force is realized through the measurement of the contact resistance.
2. The thin film sheet for eddy current micro-pressure sensor according to claim 1, wherein the non-conductive membrane sheet (12) is SiO2And (3) slicing.
3. The membrane sheet for eddy current micro-pressure sensors according to claim 1, characterized in that the conductive membrane (14) is a layer of Au.
4. A method for preparing a thin film sheet for an eddy current micro-pressure sensor according to any one of claims 1 to 3, comprising the steps of:
s01, preparing a monocrystalline silicon wafer and a non-conductive film (12), and respectively carrying out double-side polishing;
s02, carrying out electrostatic bonding on the double-sided polished monocrystalline silicon wafer and the non-conductive membrane (12) to form a bonding piece;
s03, etching a window on the monocrystalline silicon wafer and stopping on the non-conductive film (12), wherein the monocrystalline silicon wafer forms a silicon substrate (13);
s04, sputtering a conductive film on the position of the window outside the non-conductive film (12).
5. The method of claim 4, wherein after step S04, the film is etched to form islands, wherein the central circular portion is the conductive film (14) and the outer ring portion is the conductive contact ring (11).
6. The method of claim 5, further comprising forming pads and leads on the conductive contact ring (11) by:
s05, masking and photoetching a contact hole on the conductive contact ring (11);
s06, sputtering a Ni layer on the contact hole;
s07, bonding an Au layer on the Ni layer through a mask and photoetching to form a bonding pad (15);
s08, welding a lead (9) with an insulating layer on the pad (15).
7. The method of any one of claims 4 to 6, wherein in step S02, the non-conductive film (12) on the bonded sheet is thinned, thinned to a gauge thickness and polished.
8. The production method according to any one of claims 4 to 6, wherein the thin film is an Au layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711394208.6A CN108128749B (en) | 2017-12-21 | 2017-12-21 | Thin film sheet for eddy current micro-pressure sensor and preparation method thereof |
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| CN201711394208.6A CN108128749B (en) | 2017-12-21 | 2017-12-21 | Thin film sheet for eddy current micro-pressure sensor and preparation method thereof |
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| CN108128749A CN108128749A (en) | 2018-06-08 |
| CN108128749B true CN108128749B (en) | 2021-05-25 |
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| CA3165119A1 (en) * | 2019-12-17 | 2021-06-24 | Johnson & Johnson Surgical Vision, Inc. | Non-contacting, high accuracy pressure sensing for medical cassette assemblies |
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| CN103686566A (en) * | 2012-09-07 | 2014-03-26 | 罗伯特·博世有限公司 | Acoustic transducer apparatus and method for manufacturing the same, sensing device and method for determining an acoustic signal |
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| CN105645348A (en) * | 2014-11-26 | 2016-06-08 | 无锡华润上华半导体有限公司 | Production method for MEMS silicon film |
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2017
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| JP2007232707A (en) * | 2005-04-20 | 2007-09-13 | Nec Tokin Corp | Mechanical quantity sensor and its manufacturing method |
| CN104583743A (en) * | 2012-07-02 | 2015-04-29 | 罗伯特·博世有限公司 | Eddy current sensor and method for measuring a force |
| CN103575451A (en) * | 2012-08-02 | 2014-02-12 | 罗伯特·博世有限公司 | Sensor means and method for determining pressure of medium, and method of manufacturing sensor means |
| CN103686566A (en) * | 2012-09-07 | 2014-03-26 | 罗伯特·博世有限公司 | Acoustic transducer apparatus and method for manufacturing the same, sensing device and method for determining an acoustic signal |
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