CN108123003A - 一种半导体三量子点结构实现中远红外单光子探测的方法 - Google Patents
一种半导体三量子点结构实现中远红外单光子探测的方法 Download PDFInfo
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- 238000001514 detection method Methods 0.000 title claims abstract description 20
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- 230000005284 excitation Effects 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 230000005641 tunneling Effects 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 8
- 230000002708 enhancing effect Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000000523 sample Substances 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 description 3
- 101100161892 Arabidopsis thaliana ACR9 gene Proteins 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000004304 visual acuity Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 241001663154 Electron Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
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Abstract
本发明涉及一种半导体三量子点结构实现中远红外单光子探测的方法。在半导体量子结构中远红外探测领域，量子点中电子激发寿命相比目前较成熟的量子阱红外探测器方案要更长，因此量子点探测器工作温度更高、光电导增益也更高。本发明引入了Fano型量子干涉通道，增强了光子吸收效率，进一步增大了光电导增益；同时，由于光子吸收只发生在中间量子点C中，降低了周围环境的影响，进一步提高了工作温度。
Description
技术领域
本发明涉及一种利用半导体量子点探测中远红外单光子的方法，属于红外和远红外探测应用领域。
背景技术
单光子探测器在成像、化学分析、环境监测和激光测距等领域中具有广泛的应用。在可见光和近红外范围，可以采用雪崩光电二极管和光电倍增管实现单光子探测。但在中远红外波长范围，很小的光子能量使得固体中难以产生稳定的光生载流子。目前在中远红外波长范围有以下三种主要探测方式：一是利用电光晶体的非线性效应进行差分探测，此种方式具有灵敏度高、可以同时探测辐射强度和相位；二是热电探测器，这类探测器探测范围较广；三是光子型探测器，以半导体量子阱探测器为代表，具有响应速度快、探测灵敏度高和较强的光谱分辨本领等特点。
差分探测探测器体积较大，不易与半导体电路集成，具有很大的局限性；热电探测器响应率较低，没有光谱分辨本领；量子阱探测器的暗电流较大，无法探测微弱的中远红外辐射。这三种类型的探测器目前基本都不具有单光子精度，无法实现微弱中远红外光的灵敏探测。
发明内容
本发明的目的是提供一种能探测微弱的中远红外辐射的方法。
为了达到上述目的，本发明的技术方案是提供了一种半导体三量子点结构实现中远红外单光子探测的方法，其特征在于，包括以下步骤：
步骤1、制作半导体异质结，在离该半导体异质结表面一定距离处形成二维电子气，在该半导体异质结表面制作多个金属电极，通电后形成半导体三量子点结构，三量子点中的左量子点L及右量子点R分别与二维电子气通过隧穿耦合连接，三量子点中的中间量子点C与左量子点L及右量子点R通过隧穿耦合连接，左量子点L与中间量子点C构成双量子点LC系统，右量子点R与中间量子点C构成双量子点LR系统；
步骤2、调整金属电极上的电压，确保在导电窗口内左量子点L及右量子点R内部分别只有一个单电子态，而中间量子点C在导电窗口内有Donor单电子态和Acceptor单电子态，中间量子点C内Donor单电子态和Acceptor单电子态的能级之差决定了可以探测的中远红外光子频率；
步骤3、电子从半导体异质结二维电子气中由电子隧穿作用隧穿到双量子点LC系统中，中远红外光照射下，双量子点LC系统中的电子吸收一个光子由Donor单电子态跃迁到Acceptor单电子态，即进入双量子点LR系统中，再由电子隧穿作用电子从右量子点R隧穿到半导体异质结二维电子气中，从而形成光生电流，通过对光生电流的检测实现对远红外单光子的探测。
优选地，双量子点LC系统中左量子点L单电子态和中间量子点C中的Donor单电子态隧穿耦合，当该耦合强度比较大而左量子点L单电子态和中间量子点C中的Donor单电子态能级差为零时，左量子点L单电子态和中间量子点C中的Donor单电子态将形成Fano型量子干涉通道，调整隧穿耦合大小控制Fano型量子干涉通道的干涉强度，实现增强光子吸收而抑制光子激发作用，从而达到增强光电导增益的目的。
优选地，调整金属电极上的电压来控制左量子点L与中间量子点C、中间量子点C与右量子点R之间的隧穿耦合强度和能级差，并可以控制中间量子点C内两个单电子态能级差的大小。
在半导体量子结构中远红外探测领域，量子点中电子激发寿命相比目前较成熟的量子阱红外探测器方案要更长，因此量子点探测器工作温度更高、光电导增益也更高。本发明引入了Fano型量子干涉通道，增强了光子吸收效率，进一步增大了光电导增益；同时，由于光子吸收只发生在中间量子点C中，降低了周围环境的影响，进一步提高了工作温度。
附图说明
图1是实施例中半导体三量子点中远红外单光子探测器件的示意图，图中：1左量子点L、2中间量子点C、3右量子点R、4金属电极BL、5金属电极BC、6金属电极BR、7金属电极AL、8金属电极ALC、9金属电极ACR、10金属电极AR、图中带有箭头的直线代表入射中远红外光子。
具体实施方式
下面结合具体实施例，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式同样落于本申请所附权利要求书所限定的范围。
本发明提供的一种半导体三量子点结构实现中远红外单光子探测的方法实现的量子点中远红外单光子探测器件主要由三个量子点构成，利用量子点的点间隧穿来形成光电流，利用量子干涉效应增强光电转化效率，具体包括以下步骤：
步骤1、以GaAs/AlGaAs等材料体系制作半导体异质结，在该半导体异质结表面约100nm处形成二维电子气。在该半导体表面以金、银、铝等材质制作几个金属电极，即金属电极BL4、金属电极BC5、金属电极BR6、金属电极AL7、金属电极ALC8、金属电极ACR9、金属电极AR10，通电后形成半导体三量子点结构。三量子点中的左量子点L1及右量子点R3分别与二维电子气通过隧穿耦合连接，三量子点中的中间量子点C2与左量子点L1及右量子点R3通过隧穿耦合连接，左量子点L1与中间量子点C2构成双量子点LC系统，右量子点R3与中间量子点C2构成双量子点LR系统。
步骤2、调整金属电极BL4、金属电极BC5、金属电极BR6上的电压，确保在导电窗口内左量子点L1及右量子点R3内部分别只有一个单电子态，而中间量子点C2在导电窗口内有Donor单电子态和Acceptor单电子态，中间量子点C2内Donor单电子态和Acceptor单电子态的能级之差决定了可以探测的中远红外光子频率。
步骤3、调整金属电极ALC8和金属电极ACR9上的电压可以分别控制双量子点LC系统、双量子点LR系统之间的隧穿耦合强度。微调金属电极BL4和金属电极BR6上的电压可以分别控制左量子点L1与中间量子点C2之间、中间量子点C2与之间的能级差；改变量子点C大小可以控制量子点C内两个单电子态能级差的大小，即决定探测光子的频率。
电子从半导体异质结二维电子气中由电子隧穿作用隧穿到双量子点LC系统中，中远红外光照射下，双量子点LC系统中的电子吸收一个光子由Donor单电子态跃迁到Acceptor单电子态，即进入双量子点LR系统中，再由电子隧穿作用电子从右量子点R隧穿到半导体异质结二维电子气中，从而形成光生电流，通过对光生电流的检测实现对远红外单光子的探测。
在本发明中三个量子点由外加电压偏置，在左量子点L1、右量子点R3内部分别形成一个空电子基态和一个单电子态，而中间量子点C2在导电窗口内有两个单电子态Donor和Acceptor，保证三量子点结构中只有一个激发电子。中间量子点C2内两个单电子态Donor和Acceptor能级之差，该能级差基本决定了可以探测的中远红外光子频率；左量子点L1和中间量子点C2、中间量子点C2和右量子点R3之间分别由单电子隧穿作用来耦合连接。双量子点LC系统中左量子点L1单电子态和中间量子点C2中的Donor单电子态隧穿耦合，当该耦合强度比较大而两个单电子态能级差为零时，双量子点LC系统中的两个单电子态将形成Fano型量子干涉通道，调整隧穿耦合大小可以控制该干涉强度，实现增强光子吸收而抑制光子激发作用，从而达到增强光电导增益。为增强电子收集效率，双量子点CR系统中两个单电子态形成一定的能级差来减小量子相干作用导致的逆向电流大小。
Claims (3)
1.一种半导体三量子点结构实现中远红外单光子探测的方法，其特征在于，包括以下步骤：
步骤1、制作半导体异质结，在离该半导体异质结表面一定距离处形成二维电子气，在该半导体异质结表面制作多个金属电极，通电后形成半导体三量子点结构，三量子点中的左量子点L及右量子点R分别与二维电子气通过隧穿耦合连接，三量子点中的中间量子点C与左量子点L及右量子点R通过隧穿耦合连接，左量子点L与中间量子点C构成双量子点LC系统，右量子点R与中间量子点C构成双量子点LR系统；
步骤2、调整金属电极上的电压，确保在导电窗口内左量子点L及右量子点R内部分别只有一个单电子态，而中间量子点C在导电窗口内有Donor单电子态和Acceptor单电子态，中间量子点C内Donor单电子态和Acceptor单电子态的能级之差决定了可以探测的中远红外光子频率；
步骤3、电子从半导体异质结二维电子气中由电子隧穿作用隧穿到双量子点LC系统中，中远红外光照射下，双量子点LC系统中的电子吸收一个光子由Donor单电子态跃迁到Acceptor单电子态，即进入双量子点LR系统中，再由电子隧穿作用电子从右量子点R隧穿到半导体异质结二维电子气中，从而形成光生电流，通过对光生电流的检测实现对远红外单光子的探测。
2.如权利要求1所述的一种半导体三量子点结构实现中远红外单光子探测的方法，其特征在于，双量子点LC系统中左量子点L单电子态和中间量子点C中的Donor单电子态隧穿耦合，当该耦合强度比较大而左量子点L单电子态和中间量子点C中的Donor单电子态能级差为零时，左量子点L单电子态和中间量子点C中的Donor单电子态将形成Fano型量子干涉通道，调整隧穿耦合大小控制Fano型量子干涉通道的干涉强度，实现增强光子吸收而抑制光子激发作用，从而达到增强光电导增益的目的。
3.如权利要求1所述的一种半导体三量子点结构实现中远红外单光子探测的方法，其特征在于，调整金属电极上的电压来控制左量子点L与中间量子点C、中间量子点C与右量子点R之间的隧穿耦合强度和能级差，并可以控制中间量子点C内两个单电子态能级差的大小。
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| CN110085733B (zh) * | 2019-04-25 | 2022-11-29 | 电子科技大学中山学院 | 一种增强环形量子点结构中自旋热电势的方法 |
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