CN108122597B - Method and system for distinguishing SRAM single event effect detection data in atmospheric neutron - Google Patents

Method and system for distinguishing SRAM single event effect detection data in atmospheric neutron Download PDF

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CN108122597B
CN108122597B CN201711365085.3A CN201711365085A CN108122597B CN 108122597 B CN108122597 B CN 108122597B CN 201711365085 A CN201711365085 A CN 201711365085A CN 108122597 B CN108122597 B CN 108122597B
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failure rate
sram device
single event
sram
event effect
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CN108122597A (en
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张战刚
雷志锋
何玉娟
彭超
师谦
李沙金
黄云
恩云飞
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China Electronic Product Reliability and Environmental Testing Research Institute
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China Electronic Product Reliability and Environmental Testing Research Institute
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Abstract

The invention relates to the field of radiation effect of electronic devices, in particular to a method and a system for distinguishing SRAM single event effect detection data under atmospheric neutrons, wherein the total failure rate of an SRAM device is obtained by carrying out real-time atmospheric neutron single event effect detection on the SRAM device; acquiring a first failure rate of the SRAM device caused by alpha particles; acquiring a second failure rate of the SRAM device caused by thermal neutrons; and acquiring a target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate and the second failure rate. According to the scheme, the contributions of the alpha particles, the thermal neutrons and the atmospheric neutrons in the atmospheric neutron single event effect real-time measurement test data of the SRAM device can be distinguished, so that the SRAM device single event effect failure rate caused by the atmospheric neutrons is obtained, and the accuracy of the quantitative evaluation result of the atmospheric neutron single event effect sensitivity of the SRAM device is improved.

Description

Method and system for distinguishing SRAM single event effect detection data in atmospheric neutron
Technical Field
The invention relates to the field of radiation effect of electronic devices, in particular to a method and a system for distinguishing SRAM single event effect detection data in atmospheric neutrons.
Background
Various cosmic rays such as the Galaxy cosmic rays and the solar cosmic rays enter the neutral atmosphere of the earth and interact with nitrogen and oxygen in the atmosphere to form various radiation particles, so that the atmospheric space radiation environment is very complex. Among various radiation particles, neutrons are uncharged, have extremely strong penetrating power and have high content in the atmosphere, so that the single particle effect caused by the atmospheric neutrons entering an electronic system becomes a key factor threatening the safe operation of electronic equipment.
An sram (static Random Access memory) is a static memory device, which generally comprises three parts, i.e., a memory matrix, an address decoding and a read/write control logic, and can read or write data at any time in a normal operating state. Because the read-write speed of the SRAM device is very high, the dependence of various electronic equipment on the SRAM device is stronger and stronger; with the development of science and technology, the integration level of the SRAM device is improved, the complexity is increased, and the SRAM device is more sensitive to the single event effect.
In order to evaluate the influence of the atmospheric neutron-induced single-particle effect on the SRAM device, the sensitivity of the SRAM device under the atmospheric neutron single-particle effect needs to be analyzed. At present, in order to analyze the single event effect sensitivity of the SRAM device, non-accelerated experiments are performed, that is, the SRAM device is placed under an atmospheric condition, and atmospheric neutron single event effect real-time detection is performed on the SRAM array. However, in the current atmospheric neutron single event effect real-time detection data, because a plurality of particles exist under the condition of detecting environmental radiation, the sensitivity of the SRAM device for atmospheric neutron single event effect is analyzed, and the accuracy of the obtained result is lower.
Disclosure of Invention
Based on the above, in order to solve the problem that the accuracy of the obtained result is low when the sensitivity characteristic of the SRAM device for atmospheric neutron single event effect is analyzed, a method and a system for distinguishing SRAM single event effect detection data under atmospheric neutron are provided.
A method for distinguishing SRAM single event effect detection data in atmospheric neutrons comprises the following steps:
carrying out atmospheric neutron single event effect real-time detection on an SRAM (static random access memory) device to obtain the total failure rate of the SRAM device;
acquiring a first failure rate of the SRAM device caused by alpha particles;
acquiring a second failure rate of the SRAM device caused by thermal neutrons;
and acquiring a target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate and the second failure rate.
In one embodiment, the step of obtaining the first failure rate of the SRAM device caused by the alpha particles comprises the steps of:
irradiating the SRAM device through an alpha particle radiation source to obtain alpha particle single event effect cross section parameters of the SRAM device;
obtaining alpha particle flux emitted by the SRAM device;
and acquiring a first failure rate of the SRAM device according to the alpha particle single event effect cross section parameter and the alpha particle flux.
In one embodiment, the step of obtaining the first failure rate of the SRAM device caused by the alpha particles comprises the steps of:
irradiating the SRAM device through a particle accelerator to obtain alpha particle single particle effect cross section parameters of the SRAM device, wherein a particle source of the particle accelerator is alpha particles;
obtaining alpha particle flux emitted by the SRAM device;
and acquiring a first failure rate of the SRAM device according to the alpha particle single event effect cross section parameter and the alpha particle flux.
In one embodiment, the step of obtaining the first failure rate of the SRAM device according to the alpha particle single event effect cross-sectional parameter and the alpha particle flux comprises the steps of:
obtaining a first failure rate of the SRAM device according to the following functional relation:
λ1＝σalpha×FAlpha×109
In the formula, λ1Is the first failure rate, σAlphaIs said alpha particle single event effect cross-sectional parameter, FAlphaIs the alpha particle flux.
In one embodiment, the step of acquiring the second failure rate of the SRAM device caused by thermal neutrons comprises the steps of:
irradiating the SRAM device through a thermal neutron reactor to obtain thermal neutron single event effect cross section parameters of the SRAM device;
acquiring thermal neutron flux of an atmospheric neutron single event effect real-time detection environment;
and acquiring a second failure rate of the SRAM device according to the thermal neutron single event effect cross section parameter and the thermal neutron flux.
In one embodiment, the step of obtaining the second failure rate of the SRAM device according to the thermal neutron single event effect cross-sectional parameter and the thermal neutron flux includes the steps of:
obtaining a second failure rate of the SRAM device according to the following functional relation:
λ2＝σthermal neutrons×FThermal neutrons×109
In the formula, λ2To the second failure rate, σThermal neutronsIs the thermal neutron single event effect cross-sectional parameter, FThermal neutronsIs the thermal neutron flux.
In one embodiment, the step of obtaining a target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate and the second failure rate includes the steps of:
obtaining the target failure rate of the SRAM device according to the following functional relation:
λtarget＝λGeneral assembly-(λ1+λ2)
In the formula, λTargetFor the target failure rate, λGeneral assemblyTo the total failure rate, λ1For the first failure rate, λ2The second failure rate.
According to the method for distinguishing the SRAM single event effect detection data under atmospheric neutrons, the total failure rate of the SRAM device is obtained by carrying out real-time atmospheric neutron single event effect detection on the SRAM device; acquiring a first failure rate of the SRAM device caused by alpha particles; acquiring a second failure rate of the SRAM device caused by thermal neutrons; and acquiring a target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate and the second failure rate. In the scheme, the accuracy of the quantitative evaluation result of atmospheric neutron single event effect sensitivity of the SRAM device is improved and the problem that the conventional SRAM device atmospheric neutron single event effect evaluation method is lacked in China is solved by respectively obtaining the first failure rate and the second failure rate of the SRAM device caused by alpha particles and thermal neutrons and obtaining the target failure rate of the SRAM device caused by atmospheric neutrons according to the first failure rate and the second failure rate.
A data distinguishing system for SRAM single event effect detection in atmospheric neutrons comprises the following modules:
the device comprises a total failure rate acquisition module, a failure rate detection module and a failure rate detection module, wherein the total failure rate acquisition module is used for carrying out atmospheric neutron single event effect real-time detection on an SRAM (static random access memory) device and acquiring the single event effect total failure rate of the SRAM device;
the first failure rate acquisition module is used for acquiring a first failure rate of the SRAM device caused by alpha particles;
the second failure rate acquisition module is used for acquiring a second failure rate of the SRAM device caused by thermal neutrons;
and the target failure rate obtaining module is used for obtaining the target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate and the second failure rate.
In one embodiment, the target failure rate obtaining module obtains the target failure rate of the SRAM device according to the following functional relation:
λtarget＝λGeneral assembly-(λ1+λ2)
In the formula, λTargetFor the target failure rate, λGeneral assemblyTo the total failure rate, λ1For the first failure rate, λ2The second failure rate.
According to the system for distinguishing the SRAM single event effect detection data under atmospheric neutrons, the total failure rate obtaining module is used for carrying out real-time atmospheric neutron single event effect detection on the SRAM device to obtain the total failure rate of the SRAM device; a first failure rate obtaining module obtains a first failure rate of the SRAM device caused by alpha particles; a second failure rate obtaining module obtains a second failure rate of the SRAM device caused by thermal neutrons; and the target failure rate acquisition module acquires the target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate and the second failure rate. In the scheme, the accuracy of the quantitative evaluation result of atmospheric neutron single event effect sensitivity of the SRAM device is improved and the problem that the conventional SRAM device atmospheric neutron single event effect evaluation method is lacked in China is solved by respectively obtaining the first failure rate and the second failure rate of the SRAM device caused by alpha particles and thermal neutrons and obtaining the target failure rate of the SRAM device caused by atmospheric neutrons according to the first failure rate and the second failure rate.
A readable storage medium, on which an executable program is stored, which when executed by a processor, implements the steps of the above-mentioned method for distinguishing data of SRAM single event effect detection in atmospheric neutrons.
A computer device comprises a memory, a processor and an executable program which is stored on the memory and can be run on the processor, and the processor realizes the steps of the method for distinguishing the detection data of the SRAM single event effect in the atmosphere when executing the program.
Drawings
FIG. 1 is a schematic flow chart of an embodiment of a method for distinguishing SRAM single event effect detection data in atmospheric neutrons according to the present invention;
FIG. 2 is a schematic structural diagram of an embodiment of an SRAM single event effect detection data discrimination system in atmospheric neutrons according to the present invention;
FIG. 3 is a flowchart illustrating an embodiment of a method for distinguishing data of SRAM single event effect detection in atmospheric neutrons according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating the scope of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1, a schematic flow chart of an embodiment of the method for distinguishing single event effect detection data of the atmospheric neutron lower SRAM according to the present invention is shown, where the method for distinguishing single event effect detection data of the atmospheric neutron lower SRAM in the embodiment includes the following steps:
step S110: carrying out atmospheric neutron single event effect real-time detection on an SRAM (static random access memory) device to obtain the total failure rate of the SRAM device;
in this step, the atmospheric neutron single event effect real-time detection is a non-acceleration real-time measurement method conforming to the JESD89A international standard, and by performing atmospheric neutron single event effect real-time detection on the SRAM device, the failure rate result of the obtained SRAM device in the environment of the real-time detection is the truest, and a more accurate and reliable data basis can be provided for the atmospheric neutron single event effect sensitive characteristic analysis performed on the SRAM device.
Specifically, in one embodiment, the SRAM device may be subjected to atmospheric neutron single event effect detection by: determining an atmospheric neutron single event effect detection site of the SRAM device, and building an atmospheric neutron single event effect detection system; the atmospheric neutron single event effect detection system can comprise an upper computer and an SRAM device to be detected; and the upper computer sends a command to the SRAM device to be tested, monitors the working state of the SRAM device to be tested and receives experimental data returned by the SRAM device to be tested. The upper computer can obtain the total failure rate of the SRAM device in an atmospheric neutron single event effect real-time detection environment by recording the single event upset condition of the SRAM device in the detection process in real time.
Optionally, in order to improve the efficiency of atmospheric neutron single event effect real-time detection, a place with high atmospheric neutron flux may be selected to perform atmospheric neutron single event effect real-time detection on the SRAM device, for example, the atmospheric neutron single event effect real-time detection is performed at a high altitude position by an airplane-mounted manner, and the atmospheric neutron single event effect real-time detection may also be performed at a high altitude area.
Optionally, in order to improve the efficiency of atmospheric neutron single event effect real-time detection, an SRAM array may be built, where the SRAM array includes a plurality of SRAM devices of the same model, and the atmospheric neutron single event effect real-time detection is performed on the SRAM array; by simultaneously detecting a plurality of SRAM devices with the same model, the obtained detection result can be equivalent to the result of detecting one SRAM device for a long time, and the required detection time for obtaining the total failure rate can be shortened.
Step S120: acquiring a first failure rate of the SRAM device caused by alpha particles;
in the step, alpha particles are derived from radioactive material components of the SRAM device, and in the process of carrying out real-time detection on the atmospheric neutron single event effect on the SRAM device, not only can atmospheric neutrons in a real-time detection environment trigger the SRAM device to generate single event upset to cause failure, but also the alpha particles can trigger the SRAM device to generate single event upset to cause failure; therefore, the total failure rate of the SRAM device in the atmosphere neutron single event effect real-time detection environment contains the first failure rate component caused by alpha particles. By acquiring the first failure rate of the SRAM device caused by the alpha particles, the accuracy of acquiring the target failure rate in the subsequent steps is improved.
In one embodiment, the step of obtaining the first failure rate of the SRAM device caused by the alpha particles comprises the steps of:
irradiating the SRAM device through an alpha particle radiation source to obtain alpha particle single event effect cross section parameters of the SRAM device;
obtaining alpha particle flux emitted by the SRAM device;
and acquiring a first failure rate of the SRAM device according to the alpha particle single event effect cross section parameter and the alpha particle flux.
In this embodiment, the single event effect cross-sectional parameter of the SRAM device refers to an area of a sensitive region when a single event upset occurs in the SRAM device. Under the condition that different types of particles are incident, the SRAM device has different single particle effect cross section parameters, so that the SRAM device can be irradiated by an alpha particle radiation source, the process of radiating alpha particles by the material of the SRAM device is simulated, and the alpha particle single particle effect cross section of the SRAM device is determined; the alpha particle flux emitted by the SRAM device is combined, so that the accuracy of acquiring the first failure rate of the SRAM device caused by the alpha particles can be improved.
In one embodiment, the step of obtaining the first failure rate of the SRAM device caused by the alpha particles comprises the steps of:
irradiating the SRAM device through a particle accelerator to obtain alpha particle single particle effect cross section parameters of the SRAM device, wherein a particle source of the particle accelerator is alpha particles;
obtaining alpha particle flux emitted by the SRAM device;
and acquiring a first failure rate of the SRAM device according to the alpha particle single event effect cross section parameter and the alpha particle flux.
In this embodiment, the cross-sectional parameters of the SRAM device due to the single event effect are not only affected by the type of the incident particles, but also affected by the angle and energy of the incident particles. The SRAM device is irradiated by the particle accelerator with the particle source being alpha particles, so that the angle and beam fluence of the SRAM device, which is incident to the alpha particles, can be conveniently changed in the process of simulating the SRAM device to radiate the alpha particles, the simulation result is closer to the real situation, and the accuracy of obtaining the first failure rate of the SRAM device caused by the alpha particles is improved.
In one embodiment, the step of obtaining the first failure rate of the SRAM device according to the alpha particle single event effect cross-sectional parameter and the alpha particle flux comprises the steps of:
obtaining a first failure rate of the SRAM device according to the following functional relation:
λ1＝σalpha×FAlpha×109
In the formula, λ1Is the first failure rate, σAlphaIs said alpha particle single event effect cross-sectional parameter, FAlphaIs the alpha particle flux.
In this embodiment, a function relation for obtaining a first failure rate of an SRAM device according to an alpha particle single event effect cross-sectional parameter and an alpha particle flux of the SRAM device is provided, so as to improve accuracy of the obtained first failure rate.
Step S130: acquiring a second failure rate of the SRAM device caused by thermal neutrons;
at normal temperature, if the neutrons are not captured after being collided with the atomic nuclei of the protons for several times, the neutrons may be converted into thermal neutrons, and the thermal neutrons can also cause the SRAM device to generate single-particle upset, so that the SRAM device fails. In the process of performing the atmospheric neutron single event effect real-time detection on the SRAM device in this step, because the atmospheric neutrons and the thermal neutrons coexist in the real-time detection environment, the total failure rate of the SRAM device in the atmospheric neutron single event effect real-time detection environment includes a component of a second failure rate caused by the thermal neutrons. By acquiring the second failure rate of the SRAM device caused by thermal neutrons, the accuracy of acquiring the target failure rate in the subsequent steps is improved.
In one embodiment, the step of acquiring the second failure rate of the SRAM device caused by thermal neutrons comprises the steps of:
irradiating the SRAM device through a thermal neutron reactor to obtain thermal neutron single event effect cross section parameters of the SRAM device;
acquiring thermal neutron flux of an atmospheric neutron single event effect real-time detection environment;
and acquiring a second failure rate of the SRAM device according to the thermal neutron single event effect cross section parameter and the thermal neutron flux.
In this embodiment, the thermal neutron reactor is a device capable of performing a nuclear fission chain reaction under controlled conditions, and can stably and continuously provide thermal neutrons. Under the condition that different types of particles are incident, the SRAM device has different single event effect cross section parameters, so that the SRAM device can be irradiated through a thermal neutron reactor, the simulation of the thermal neutron environment of the atmospheric neutron single event effect real-time detection site is realized, and the thermal neutron single event effect cross section of the SRAM device is determined; and the thermal neutron flux in the environment is detected in real time by combining the atmospheric neutron single event effect of the SRAM device, so that the accuracy of obtaining the second failure rate of the SRAM device caused by thermal neutrons can be improved.
In one embodiment, the step of obtaining the second failure rate of the SRAM device according to the thermal neutron single event effect cross-sectional parameter and the thermal neutron flux includes the steps of:
obtaining a second failure rate of the SRAM device according to the following functional relation:
λ2＝σthermal neutrons×FThermal neutrons×109
In the formula, λ2To the second failure rate, σThermal neutronsIs the thermal neutron single event effect cross-sectional parameter, FThermal neutronsIs the thermal neutron flux.
In the embodiment, a functional relation for obtaining a second failure rate of the SRAM device according to a thermal neutron single event effect cross-sectional parameter and a thermal neutron flux of the SRAM device is provided, so that accuracy of the obtained second failure rate is improved.
Step S140: and acquiring a target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate and the second failure rate.
In this step, since other particles besides atmospheric neutrons exist in the real-time detection environment, the total failure rate obtained by performing atmospheric neutron single event effect real-time detection on the SRAM device includes failure rate components caused by other particles. Among the other particles, alpha particles derived from a radioactive material of the SRAM device and thermal neutrons existing in a real-time detection environment have a large influence on the total failure rate, so that the accuracy of obtaining the target failure rate can be improved according to the total failure rate, the first failure rate, and the second failure rate.
In one embodiment, the step of obtaining a target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate and the second failure rate includes the steps of:
obtaining the target failure rate of the SRAM device according to the following functional relation:
λtarget＝λGeneral assembly-(λ1+λ2)
In the formula, λTargetFor the target failure rate, λGeneral assemblyTo the total failure rate, λ1For the first failure rate, λ2The second failure rate.
In this embodiment, according to the functional relation, in the total failure rate obtained by performing the atmospheric neutron single event effect real-time detection on the SRAM device, components of the first failure rate and the second failure rate caused by alpha particles and thermal neutrons may be simultaneously removed, so that the target failure rate is closer to the failure rate of the SRAM device caused by atmospheric neutrons in the real-time detection.
According to the method for distinguishing the SRAM single event effect detection data under atmospheric neutrons, the total failure rate of the SRAM device is obtained by carrying out real-time atmospheric neutron single event effect detection on the SRAM device; acquiring a first failure rate of the SRAM device caused by alpha particles; acquiring a second failure rate of the SRAM device caused by thermal neutrons; and acquiring a target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate and the second failure rate. In the scheme, the accuracy of the quantitative evaluation result of atmospheric neutron single event effect sensitivity of the SRAM device is improved and the problem that the conventional SRAM device atmospheric neutron single event effect evaluation method is lacked in China is solved by respectively obtaining the first failure rate and the second failure rate of the SRAM device caused by alpha particles and thermal neutrons and obtaining the target failure rate of the SRAM device caused by atmospheric neutrons according to the first failure rate and the second failure rate.
Referring to fig. 2, a schematic structural diagram of an embodiment of the system for distinguishing the single event effect detection data of the SRAM in the atmospheric neutron according to the present invention is shown, where the system for distinguishing the single event effect detection data of the SRAM in the atmospheric neutron in the embodiment includes the following modules:
the total failure rate obtaining module 210 is configured to perform atmospheric neutron single event effect real-time detection on the SRAM device, and obtain a single event effect total failure rate of the SRAM device;
a first failure rate obtaining module 220, configured to obtain a first failure rate of the SRAM device caused by alpha particles;
in one embodiment, the first failure rate obtaining module 220 obtains the cross-sectional parameter of the SRAM device by irradiating the SRAM device with an alpha particle radiation source; obtaining alpha particle flux emitted by the SRAM device; and acquiring a first failure rate of the SRAM device according to the alpha particle single event effect cross section parameter and the alpha particle flux.
In one embodiment, the first failure rate obtaining module 220 obtains the cross-sectional parameter of the single event effect of alpha particles of the SRAM device by irradiating the SRAM device through a particle accelerator, where a particle source of the particle accelerator is alpha particles; obtaining alpha particle flux emitted by the SRAM device; and acquiring a first failure rate of the SRAM device according to the alpha particle single event effect cross section parameter and the alpha particle flux.
In one embodiment, the first failure rate obtaining module 220 obtains the first failure rate of the SRAM device according to the following functional relationship:
λ1＝σalpha×FAlpha×109
In the formula, λ1Is that it isFirst failure rate, σAlphaIs said alpha particle single event effect cross-sectional parameter, FAlphaIs the alpha particle flux.
A second failure rate obtaining module 230, configured to obtain a second failure rate of the SRAM device caused by thermal neutrons;
in one embodiment, the second failure rate obtaining module 230 obtains a thermal neutron single event effect cross-sectional parameter of the SRAM device by irradiating the SRAM device through a thermal neutron reactor; acquiring thermal neutron flux of an atmospheric neutron single event effect real-time detection environment; and acquiring a second failure rate of the SRAM device according to the thermal neutron single event effect cross section parameter and the thermal neutron flux.
In one embodiment, the second failure rate obtaining module 230 obtains the second failure rate of the SRAM device according to the following functional relationship:
λ2＝σthermal neutrons×FThermal neutrons×109
In the formula, λ2To the second failure rate, σThermal neutronsIs the thermal neutron single event effect cross-sectional parameter, FThermal neutronsIs the thermal neutron flux.
And a target failure rate obtaining module 240, configured to obtain a target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate, and the second failure rate.
In one embodiment, the target failure rate obtaining module 240 obtains the target failure rate of the SRAM device according to the following functional relationship:
λtarget＝λGeneral assembly-(λ1+λ2)
In the formula, λTargetFor the target failure rate, λGeneral assemblyTo the total failure rate, λ1For the first failure rate, λ2The second failure rate.
The atmospheric neutron lower SRAM single event effect detection data distinguishing system and the atmospheric neutron lower SRAM single event effect detection data distinguishing method correspond to each other one by one, and the technical characteristics and the beneficial effects explained in the embodiment of the atmospheric neutron lower SRAM single event effect detection data distinguishing method are all applicable to the embodiment of the atmospheric neutron lower SRAM single event effect detection data distinguishing system.
Referring to fig. 3, a schematic flow chart of an embodiment of the method for distinguishing single event effect detection data of the atmospheric neutron lower SRAM according to the present invention is shown, where the method for distinguishing single event effect detection data of the atmospheric neutron lower SRAM in the embodiment includes the following steps:
step S310: carrying out atmospheric neutron single event effect real-time detection on an SRAM (static random Access memory) device to obtain the total failure rate (lambda) of the SRAM deviceGeneral assemblyIn FIT);
step S321: irradiating the SRAM device through an alpha particle radiation source to obtain an alpha particle single event effect cross section parameter (sigma) of the SRAM deviceAlphaIn units of cm2/device)；
Step S322: obtaining alpha particle flux (F) emitted by the SRAM deviceAlphaIn units of particles/cm2/hr)；
Step S323: according to a functional relation λ1＝σAlpha×FAlpha×109Obtaining a first failure rate (λ) of the SRAM device1In FIT);
step S331: irradiating the SRAM device through a thermal neutron reactor to obtain a thermal neutron single event effect cross-sectional parameter (sigma) of the SRAM deviceThermal neutronsIn units of cm2/device)；
Step S332: obtaining thermal neutron flux (F) of atmosphere neutron single event effect real-time detection environmentThermal neutronsIn units of particles/cm2/hr)；
Step S333: according to a functional relation λ2＝σThermal neutrons×FThermal neutrons×109Obtaining a second failure rate (λ) of the SRAM device2In FIT);
step S340: according to a functional relation λTarget＝λGeneral assembly-(λ1+λ2) Obtaining a target failure rate (λ) of the SRAM deviceTargetIn FIT).
According to the method for distinguishing the SRAM single event effect detection data under atmospheric neutrons, the total failure rate of the SRAM device is obtained by carrying out real-time atmospheric neutron single event effect detection on the SRAM device; acquiring a first failure rate of the SRAM device caused by alpha particles; acquiring a second failure rate of the SRAM device caused by thermal neutrons; and acquiring a target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate and the second failure rate. In the scheme, a first failure rate and a second failure rate of the SRAM device caused by alpha particles and thermal neutrons are obtained respectively, and a target failure rate of the SRAM device caused by atmospheric neutrons is obtained according to the first failure rate and the second failure rate, so that the respective contributions of the alpha particles, the thermal neutrons and the atmospheric neutrons in atmospheric neutron single event effect real-time measurement test data of the SRAM device can be distinguished, the SRAM device single event effect failure rate caused by atmospheric neutrons is obtained, the accuracy of a quantitative evaluation result of atmospheric neutron single event effect sensitivity of the SRAM device is improved, basic data are provided for system level evaluation, and the problem that the conventional SRAM device atmospheric neutron effect evaluation method is lacked in China is solved.
According to the method for distinguishing the SRAM single event effect detection data in the atmospheric neutron, the embodiment of the invention also provides a readable storage medium and computer equipment. The readable storage medium stores an executable program, and the program realizes the steps of the method for distinguishing the SRAM single event effect detection data in the atmospheric neutron when being executed by a processor; the computer equipment comprises a memory, a processor and an executable program which is stored on the memory and can be run on the processor, and the processor realizes the steps of the method for distinguishing the detection data of the single event effect of the SRAM in the atmosphere when executing the program.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A method for distinguishing SRAM single event effect detection data in atmospheric neutrons is characterized by comprising the following steps:
carrying out atmospheric neutron single event effect real-time detection on an SRAM (static random access memory) device to obtain the total failure rate of the SRAM device;
acquiring a first failure rate of the SRAM device caused by alpha particles; the alpha particles are derived from the radioactive material composition of the SRAM device;
acquiring a second failure rate of the SRAM device caused by thermal neutrons;
acquiring a target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate and the second failure rate;
carrying out atmospheric neutron single event effect real-time detection on the SRAM device, and obtaining the total failure rate of the SRAM device comprises the following steps:
and (3) setting up an atmospheric neutron single event effect detection system, and recording the single event upset condition of the SRAM device in the detection process to obtain the total failure rate of the SRAM device in the atmospheric neutron single event effect real-time detection environment.
2. The method for distinguishing the data of the SRAM single event effect detection in the atmosphere according to claim 1, wherein the step of obtaining the first failure rate of the SRAM device caused by the alpha particles comprises the following steps:
irradiating the SRAM device through an alpha particle radiation source to obtain alpha particle single event effect cross section parameters of the SRAM device;
obtaining alpha particle flux emitted by the SRAM device;
and acquiring a first failure rate of the SRAM device according to the alpha particle single event effect cross section parameter and the alpha particle flux.
3. The method for distinguishing the data of the SRAM single event effect detection in the atmosphere according to claim 1, wherein the step of obtaining the first failure rate of the SRAM device caused by the alpha particles comprises the following steps:
irradiating the SRAM device through a particle accelerator to obtain alpha particle single particle effect cross section parameters of the SRAM device, wherein a particle source of the particle accelerator is alpha particles;
obtaining alpha particle flux emitted by the SRAM device;
and acquiring a first failure rate of the SRAM device according to the alpha particle single event effect cross section parameter and the alpha particle flux.
4. The method for distinguishing the detection data of the single event effect of the SRAM in the atmosphere according to claim 2 or 3, wherein the step of obtaining the first failure rate of the SRAM device according to the cross section parameter of the single event effect of the alpha particles and the flux of the alpha particles comprises the following steps:
obtaining a first failure rate of the SRAM device according to the following functional relation:
λ1＝σalpha×FAlpha×109
In the formula, λ1Is the first failure rate, σAlphaIs said alpha particle single event effect cross-sectional parameter, FAlphaIs the alpha particle flux.
5. The method for distinguishing the SRAM single event effect detection data under the atmospheric neutrons according to claim 1, wherein the step of obtaining the second failure rate of the SRAM device caused by the thermal neutrons comprises the following steps:
irradiating the SRAM device through a thermal neutron reactor to obtain thermal neutron single event effect cross section parameters of the SRAM device;
acquiring thermal neutron flux of an atmospheric neutron single event effect real-time detection environment;
and acquiring a second failure rate of the SRAM device according to the thermal neutron single event effect cross section parameter and the thermal neutron flux.
6. The method for distinguishing the SRAM single event effect detection data under the atmospheric neutrons according to claim 5, wherein the step of obtaining the second failure rate of the SRAM device according to the thermal neutron single event effect cross-section parameter and the thermal neutron flux comprises the following steps:
obtaining a second failure rate of the SRAM device according to the following functional relation:
λ2＝σthermal neutrons×FThermal neutrons×109
In the formula, λ2To the second failure rate, σThermal neutronsIs the thermal neutron single event effect cross-sectional parameter, FThermal neutronsIs the thermal neutron flux.
7. The method for distinguishing the data of the SRAM single event effect detection under the atmospheric neutrons according to claim 1, wherein the step of obtaining the target failure rate of the SRAM device caused by the atmospheric neutrons according to the total failure rate, the first failure rate and the second failure rate comprises the following steps:
obtaining the target failure rate of the SRAM device according to the following functional relation:
λtarget＝λGeneral assembly-(λ1+λ2)
In the formula, λTargetFor the target failure rate, λGeneral assemblyTo the total failure rate, λ1Is the firstA failure rate of one, λ2The second failure rate.
8. The system for distinguishing the data of the SRAM single event effect detection in the atmospheric neutron is characterized by comprising the following modules:
the device comprises a total failure rate acquisition module, a failure rate detection module and a failure rate detection module, wherein the total failure rate acquisition module is used for carrying out atmospheric neutron single event effect real-time detection on an SRAM (static random access memory) device and acquiring the single event effect total failure rate of the SRAM device;
the first failure rate acquisition module is used for acquiring a first failure rate of the SRAM device caused by alpha particles; the alpha particles are derived from the radioactive material composition of the SRAM device;
the second failure rate acquisition module is used for acquiring a second failure rate of the SRAM device caused by thermal neutrons;
a target failure rate obtaining module, configured to obtain a target failure rate of the SRAM device caused by atmospheric neutrons according to the total failure rate, the first failure rate, and the second failure rate;
the total failure rate obtaining module is also used for building an atmospheric neutron single event effect detection system, recording the single event upset condition of the SRAM device in the detection process, and obtaining the total failure rate of the SRAM device in the atmospheric neutron single event effect real-time detection environment.
9. A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of the method for distinguishing data of SRAM single event effect detection in atmospheric air according to any one of claims 1 to 7.
10. A computer device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, wherein the processor implements the steps of the method for distinguishing sub-atmospheric SRAM single event detection data according to any one of claims 1 to 7 when executing the program.
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