CN108120371A - Sub-wavelength dimensions microelectronic structure optical critical dimension method for testing and analyzing and device - Google Patents
Sub-wavelength dimensions microelectronic structure optical critical dimension method for testing and analyzing and device Download PDFInfo
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- CN108120371A CN108120371A CN201611079665.1A CN201611079665A CN108120371A CN 108120371 A CN108120371 A CN 108120371A CN 201611079665 A CN201611079665 A CN 201611079665A CN 108120371 A CN108120371 A CN 108120371A
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
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Abstract
This application discloses a kind of sub-wavelength dimensions microelectronic structure optical critical dimension analysis methods, which is characterized in that includes step：A) sample to be tested surface is placed in by far field super lens are parallel, the far field super lens surface for the combining structure that far field super lens and sample to be tested are formed is irradiated with light source, measure sample actual measurement Zero-order diffractive spectrum；B) based on vector analysis algorithm, initial critical size parameter is set, the simulation Zero-order diffractive spectrum of the combining structure is calculated in simulation；C) above-mentioned spectrum is compared：As consistent, then simulation is calculated and compared again again after critical size parameter described in amendment step b)；As consistent, then with reference to the current critical size parameter simulated Zero-order diffractive spectrum and the parameter of the far field super lens, sample to be tested is calculated.Disclosed herein as well is the devices that the above method uses.
Description
Technical field
The invention belongs to optical engineering fields, are related to a kind of sub-wavelength period microelectronic structure optical critical dimension test point
Analysis method.
Background technology
In semiconductor and other microelectronic industrys, chip structure is crucial to its microelectronic structure in design and manufacture
The fast and effective detection of size (CD) is to control the important means of chip yields and volume production efficiency.Chip integration is high, passes through
After the series of process such as plate-making, photoetching, etching, the structure (Pattern) on chip will form periodic arrangement.Periodic arrangement
The size detecting method of micro-structure is more, such as conventional optical microscope technology, microscopy (EM), probe microscopy (SPM).But
It is that these detection methods either need complicated microscope device that high vacuum environment is either needed to test or can only realize table
Facial contour pattern test can damage micro-structure, therefore all be difficult to realize the on-line quick detection during volume production.
Can then on-line checking be realized to microelectronic structure CD, it is simple to test environment requirement, can also divide using optical diffraction principle
The dimensional parameters of structure non-surface layer are analysed, therefore as technological means important in CD tests/analysis.The technology originates from grating
Design and the diffraction measurement art in preparation process, by obtaining structure feature to periodic structure far field construction specificity analysis
Parameter.
In semiconductor microelectronic field, due to laying particular emphasis on the measurement to chip critical size, which is more claimed
(OCD) is detected for optical critical dimension.The technology has more than 30 years development history in the world, and the OCD detections of early stage are using mark
Electromagnetic field is to realize CD tests/analysis in amount diffraction model simulation micro-structure.But with manufacturing process in semiconductor industry
Constantly upgrading, scalar diffraction model have been difficult in adapt to the required precision in OCD detections, more accurate microelectronic structure critical size
Detection technique becomes the problem of urgently final result.
The content of the invention
According to the one side of the application, a kind of sub-wavelength dimensions microelectronic structure optical critical dimension analysis side is provided
Method, this method are based on test/analysis system of far field super lens (abbreviation FSL) improving optical critical size (being abbreviated as OCD)
Measurement accuracy, and smaller optical critical dimension can be measured, the method includes the steps of：
A) sample to be tested surface is placed in by far field super lens are parallel, irradiate far field super lens with light source and sample to be tested is formed
Combining structure far field super lens surface, measure sample actual measurement Zero-order diffractive spectrum；
B) based on vector analysis algorithm, initial critical size parameter is set, the combining structure is calculated in simulation
Simulate Zero-order diffractive spectrum；
C) the simulation Zero-order diffractive spectrum that step b) is obtained is compared with the obtained measured spectras of step a)：It is such as right
More inconsistent than result, then described in amendment step b) after critical size parameter, the combining structure is calculated in simulation again
Zero-order diffractive spectrum is simulated, and the measured spectra with being measured in step a) compares；If comparing result is consistent, then combines and work as
The critical size parameter of sample to be tested is calculated in preceding simulation Zero-order diffractive spectrum and the parameter of the far field super lens.
Preferably, the far field super lens are made of one-dimensional metal silver-glass raster and metallic silver thin plate.
It is further preferred that metallic silver thin plate one side of the sample to be tested in the far field super lens.Its is beneficial
Have the technical effect that first pass through metallic silver thin plate realize to sample diffraction generate evanescent wave enhancing, then pass through metal grating
Evanescent wave is converted into transmission wave to be received in far field by the diffraction of structure, to obtain high-precision sub-wavelength dimensions microelectronic structure
Structure optical critical dimension analysis result.The structural parameters of metallic silver-glass raster and metallic silver thin plate in the far field super lens
(including metal grating cycle, grating thickness, sheet metal thickness etc.) can be carried out according to specimen material and its critical size scope
Design, to obtain high-precision sub-wavelength dimensions microelectronic structure optical critical dimension analysis result.
It is further preferred that the grating period A of the metallic silver-glass raster2With the screen periods of the sample to be tested
Λ1Difference be misplace cycle of parameter δ, δ be ε, wherein：ε is │ liΛ1-piΛ2Minimum values of the │ in addition to 0, liFor 1 to l it is just whole
Number, piFor 1 to p positive integer, l and p is positive integer and greatest common divisor is 1 and meets l Λ1=p Λ2。
The FSL of said structure is added on sample to be tested surface, existing simulation algorithm need not be changed, it is not required that existing
Some measuring devices make too big change, you can obtain the very high sub-wavelength dimensions microelectronic structure optical critical dimension point of precision
Analyse result.
Preferably, the light source in the step a) is parallel TM polarised lights.It is incident as optics incidence mould using directional light
Type can reduce the influence of converged light in Systems for optical inspection device.It is further preferred that the light source in the step a) is flat
The detection of the TM polarised light Systems for optical inspection device realization diffraction light concern parameter curve capable, hot spot is less than 100 microns.
Preferably, the vector analysis algorithm in the step b) is rigorous couple-wave analysis method (being abbreviated as RCWA) or layer
Absorption process (is abbreviated as SAM).It is further preferred that the vector analysis algorithm in the step b) is rigorous couple-wave analysis side
Method.
Preferably, the comparison algorithm in the step c) (is abbreviated as Levenberg- for row text Burger-Ma Kuaertefa
Marquardt)。
Those skilled in the art can need to select the light source to irradiate according to RCWA or other vector analysis algorithms
State the incident angle on combining structure surface.
Preferably, it is air layer between the far field super lens and the sample surface.The thickness h of air layer is certain
In the range of have significant impact, especially h near 0.5 micron to each order of diffraction reflectivity and diffraction spectra, have the shadow of mutation formula
It rings：After air layer thickness h is more than 0.5 micron, cyclically-varying is presented with h in reflectivity；And it is less than 0.5 micron of scope in h
Interior, the variation of each order of diffraction reflectivity is aperiodic, and diffraction spectra has one-to-one relation with h.Therefore as air layer thickness h
During less than 0.5 micron, the technical solution of the application, can precision it is high and be quickly obtained very much sub-wavelength dimensions microelectronic structure
Structure optical critical dimension analysis result.
It is further preferred that the thickness of the air layer is less than 0.5 micron.
It is further preferred that the thickness of the air layer is 0.02 micron to 0.5 micron.
According to further aspect of the application, a kind of sub-wavelength dimensions microelectronic structure optical critical dimension test is provided
Analytical equipment, which is characterized in that described device includes：Wide spectrum light source, control device of light beam, far field super lens, detecting lenses, spectrum
Instrument and software analysis platform, the far field super lens are parallel to be placed in sample to be tested surface；
After the light beam that the wide spectrum light source is launched is by the control device of light beam, it is super that the far field is incided into successively
The surface of mirror and the sample to be tested simultaneously generates emergent light, and emergent light is detected to obtain outgoing spectrum by spectrometer by detecting lenses
Signal, outgoing spectral signal input the critical size parameter of output sample to be tested after the software analysis platform.
Preferably, the far field super lens are made of one-dimensional metal silver-glass raster and metallic silver thin plate.
Preferably, the metallic silver thin plate one side in the far field super lens close to the sample to be tested and with the sample
It is air layer between surface.
It is further preferred that the thickness of the air layer is less than 0.5 micron.
It is further preferred that the thickness of the air layer is 0.02 micron to 0.5 micron.
As a specific embodiment, the objective table that height coordinate is accurately controlled with one surpasses the far field
Air layer thickness between lens and the sample to be tested is controlled within 0.5 micron.
Preferably, the grating period A of the metallic silver-glass raster2With the grating period A of the sample to be tested1Difference
Cycle for misplace parameter δ, δ is ε, wherein：ε is │ liΛ1-piΛ2Minimum values of the │ in addition to 0, liFor 1 to l positive integer, piFor
1 to p positive integer, l and p are positive integer and greatest common divisor is 1 and meets l Λ1=p Λ2。
It is clear to describe, above-mentioned dislocation parameter δ is defined as follows：Using the central axes of lower floor's grating some grid ridge as original
Point, the x-axis coordinate of some grid chi chung axis of upper strata grating are to misplace parameter δ, δ with periodically.If two screen periods are expired
Sufficient l Λ1=p Λ2, wherein l, p are positive integer, and greatest common divisor is 1.│ l are represented with εiΛ1-piΛ2Minimums of the │ in addition to 0
It is worth (liFor 1 to l positive integer, piPositive integer for 1 to p), then the cycle of δ is ε.
Preferably, the light beam that the wide frequency light source is sent is converging beam；It is further preferred that the wide frequency light source is
The light source introduced by fibre-optical splice coupled into optical fibres.
Preferably, the control device of light beam includes pin hole or fibre-optical splice, the first collimation lens group, polarizer, tunable optical
Door screen and the first convergence lens set, the control device of light beam are used to implement with special polarization state, polarization direction, convergence angle and most
The detection light beam of small detection hot spot；The first collimation lens group can be the broad-spectrum beam of 190nm-1100nm to spectral range
Carry out achromatism collimation；The first convergence lens set can disappear to the broad-spectrum beam that spectral range is 190nm-1100nm
Aberration converges；The polarizer adjusts the polarization direction of light beam for obtaining linearly polarized light；Adjustable diaphragm is used to adjust light beam
Diameter, beam diameter determine the convergence angle of detection light beam, and influence the size of minimum convergence hot spot.
Preferably, the detecting lenses include the second collimation lens group and the second convergence lens set；Second collimating mirror
Piece group can carry out the broad-spectrum beam that spectral range is 190nm-1100nm achromatism collimation, and the second convergence lens set can
Achromatism convergence is carried out to the broad-spectrum beam that spectral range is 190nm-1100nm and is coupled into the spectrometer.
Preferably, the spectral range of the spectrometer detection is 190nm-1100nm.
The advantageous effect that the application can generate includes：The method and apparatus that the application provides are improved based on far field super lens
Test/analysis precision of optical critical dimension, and smaller optical critical dimension can be measured.The application provide method and
Device can obtain high order diffraction spectrum, can further obtain finer and more accurately optical critical dimension analysis knot
Fruit.
Description of the drawings
Fig. 1 is the application optical critical dimension method for testing and analyzing principle schematic.
Fig. 2 is the application optical critical dimension method for testing and analyzing logical flow chart.
Fig. 3 is the application optical critical dimension device for testing and analyzing schematic diagram.
Fig. 4 is FSL and sample relation schematic diagram in the application optical critical dimension method for testing and analyzing and device.
Fig. 5 is FSL structural profile illustrations in the application optical critical dimension method for testing and analyzing and device.
Fig. 6 is a kind of obtained diffraction light spectrogram of embodiment of the application.
Fig. 7 is the obtained diffraction light spectrogram of the application comparative example.
Mark in attached drawing 3 is entitled：1. wide spectrum light source；2. control device of light beam；3. detecting lenses；4. spectrometer；It is 5. soft
Part analysis platform.
Specific embodiment
To make the technical solution of the embodiment of the present application and advantage clearer, below in conjunction with attached in the embodiment of the present application
Figure, is clearly and completely described the technical solution in the embodiment of the present application, it is clear that described embodiment is the application
Part of the embodiment, instead of all the embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not having
All other embodiments obtained under the premise of creative work are made, shall fall in the protection scope of this application.
Embodiment
Fig. 1 is the optical schematic diagram of the application optical detection detection method.Wherein wide spectrum light sourceIt is incident by free space
Onto sample, space geometry characteristic is limited by three angles：(0 °≤θ of incidence angle θ<90 °), (0 °≤φ of azimuth φ<
360 °), (0 °≤ψ of angle of polarization ψ<360°).As shown in Fig. 2, incidence angle is the wide spectrum light source of θ in the apparatus and method of the present embodiment
Zero-order diffractive spectrum is formed after inciding into combining structure, the Zero-order diffractive curve of spectrum is then detected by micro spectrometer, most
Afterwards detection is worth to by calculating the ratio of Zero-order diffractive spectrum and wide spectrum light source spectral intensity on software analysis platform 5 in Fig. 1
Zero-order diffractive rate curve.Detection and analysis software establishes the mathematics physics model of sample, first sets the initial knot of mathematics physics model
Structure parameter (structural cycle, optical grating construction thickness, duty cycle, dislocation parameter, air layer thickness etc.) is starting point, by RCWA or
Person SAM parsers (Fig. 6 and Fig. 7 are the result obtained by taking RCWA as an example) simulation calculates the zero of sample initial mathematical physical model
Order diffraction rate curve, then the Zero-order diffractive rate curve by Levenberg-Marquardt optimization algorithm comparative simulations and detection
Zero-order diffractive rate curve between difference size, judge whether that changing mathematics physics model structural parameters carries out simulative optimization point again
Analysis.Zero-order diffractive rate curve such as simulation can be fitted with the Zero-order diffractive rate curve detected, then be not required to change, with current mathematics
Physical model critical size structural parameters are as sample critical size structural parameters；Zero-order diffractive rate curve and detection such as simulation
Zero-order diffractive rate curve cannot be fitted, then need the structural parameters that first set of modification mathematics physics model, repeat above-mentioned fitting point
Analysis process, until the final Zero-order diffractive rate curve (simulating Zero-order diffractive spectrum) for realizing simulation and the Zero-order diffractive rate of detection are bent
Line (actual measurement Zero-order diffractive spectrum) can be fitted.With reference to the FSL's for being fitted successful mathematics physics model structural parameters and use
The structural parameters of sample are calculated in structural parameters, the final inverting detection for realizing sample structure critical size and precision it is high and
It is quickly obtained very much sub-wavelength dimensions microelectronic structure optical critical dimension analysis result.Logic in its specific implementation process
Decision flow chart is as shown in Figure 2.
Sub-wavelength dimensions microelectronic structure optical critical dimension test analysis fills in a kind of specific embodiment of the application
It puts as shown in figure 3, including wide spectrum light source 1, control device of light beam 2, detecting lenses 3, spectrometer 4 and software analysis platform 5.Wide spectrum optical
Source 1 can emission spectrum scope be 190nm~1100nm parallel TM light beams, this light beam successively pass through Beam Control portion
Pin hole, the first collimation lens group, polarizer, adjustable diaphragm and the first convergence lens set in 2, are converged on far field super lens surface
Into a hot spot, then the diffraction light of generation is converged by detecting lenses 3, the diffraction light after convergence is passed through spectrometer 4 and obtains actual measurement zero
Order diffraction is composed, by obtained actual measurement Zero-order diffractive spectrum Input Software analysis platform 5.
Wherein the first collimation lens group includes a piece of quartz lens and a piece of balsaming lens, and wherein balsaming lens is by a piece of near
The magnesium fluoride eyeglass of the fused silica glass of light source side and a piece of distance light source forms, and possesses so that incident light collimation and achromatic light
Learn performance.The composition of first convergence lens set is identical with the first collimation lens group.Detecting lenses 3 include the second collimation lens group and
Second convergence lens set, collimation convergence is carried out to diffraction light.Detecting lenses 3 are by diffraction light directive spectrometer 4, and by spectrometer 4
Electric signal transmission is converted into be handled to software analysis platform 5.Software analysis platform 5 is NVIDIA companiesGPU
The computing platform of the GPU/CPU frameworks of accelerator and the polycaryon processor of Intel Company composition.
In order to more intuitively embody the spy of the super-resolution of optical critical dimension device for testing and analyzing of the present invention and method
Point, embodiment selection cycle are that silicon/air grating of 100nm is illustrated as sample, and schematic diagram is as shown in figure 4, Fig. 4 gives
FSL and the sectional view of the combining structure of One Dimension Periodic grating, middle and lower part are sample, and the grating thickness of sample is 55nm, and silicon accounts for
Than 0.5, substrate is silicon；The top of Fig. 4 is FSL, and Fig. 5 gives the structure diagram and relevant parameter of FSL.Sample screen periods
For Λ1, the Ag screen periods of FSL are Λ2.It (is referred to as the sheet metal between upper and lower two parts in Fig. 4 and air layer
Even layer), it is believed that its duty cycle and cycle are 1.The refractive index of base material silicon is ns。
It is clear to describe, the dislocation parameter δ in Fig. 4 is defined as follows：With the axis of some grid ridge of lower floor's sample grating
Line is origin, and the x-axis coordinate of some grid chi chung axis of upper strata FSL silver metal gratings is the parameter δ that misplaces.δ has periodically.
If two screen periods meet l Λ1=p Λ2, wherein l and p are positive integer and greatest common divisor is 1.│ l are represented with εiΛ1-pi
Λ2Minimum value (ls of the │ in addition to 0i=1 ..., l, pi=1 ..., p), then the cycle of δ is ε.As a kind of wherein simplest side
Formula, as l=1 and p=1, then δ=│ Λ1-Λ2│。
Research shows that cyclically-varying is presented with h in reflectivity after air layer thickness h is more than 0.5 micron；And it is less than in h
In 0.5 micron range, the variation of each order of diffraction reflectivity is aperiodic, and diffraction spectra has one-to-one relation with h.Therefore,
The objective table that height coordinate can be accurately controlled with one controls FSL and sample room air layer thickness within 0.5 μm, with
Preferably, precision is higher and is quickly obtained very much sub-wavelength dimensions microelectronic structure optical critical dimension analysis result.
With the direct vertical irradiation FSL surfaces of TM polarised lights during test, during for TM polarized incident light vertical incidence, can swash
Send out first-order diffraction light, such as Fig. 6.Optical grating construction determines its diffraction spectra, when there is the diffraction light of multiple orders of diffraction to be transmission light, just
The finer structural parameters of grating can be measured, even if only having used Zero-order diffractive spectrum.According to above-mentioned specific measuring process, base
The OCD measurements of higher precision, smaller critical size can be realized in optical critical dimension test/analysis system of FSL.
Comparative example
It is identical with the sample and device of embodiment 1, it differs only in and is added without FSL, directly hung down with same TM polarised lights
The grating is directly irradiated, there was only Zero-order diffractive in diffraction light, without high order diffraction.Due to the presence of diffraction limit, in diffraction light
Only Zero-order diffractive, and the high order diffraction for carrying the more fine structure information of sample is all evanescent wave, is limited in sample surfaces
Near-field region and far field cannot be propagated to, as shown in fig. 7, first-order diffraction intensity be 0 (first-order diffraction curve and X-axis weight
It is folded), so cause the loss of sample structure information.Therefore in this case, by comparing the Zero-order diffractive surveyed and simulation
Zero-order diffractive be unable to inverting and obtain higher precision, the smaller critical size of sample to be tested.
The above is only several embodiments of the application, any type of limitation is not done to the application, although this Shen
Please disclosed as above with preferred embodiment, however not to limit the application, any person skilled in the art is not taking off
In the range of technical scheme, make a little variation using the technology contents of the disclosure above or modification is equal to
Case study on implementation is imitated, is belonged in the range of technical solution.
Claims (10)
1. a kind of sub-wavelength dimensions microelectronic structure optical critical dimension analysis method, which is characterized in that comprise the steps of：
A) sample to be tested surface is placed in by far field super lens are parallel, irradiate the group that far field super lens and sample to be tested are formed with light source
The far field super lens surface of structure is closed, measures sample actual measurement Zero-order diffractive spectrum；
B) based on vector analysis algorithm, initial critical size parameter is set, the simulation of the combining structure is calculated in simulation
Zero-order diffractive is composed；
C) the simulation Zero-order diffractive spectrum that step b) is obtained is compared with the obtained measured spectras of step a)：Such as compare knot
Fruit is inconsistent, then described in amendment step b) after critical size parameter, the simulation of the combining structure is calculated in simulation again
Zero-order diffractive is composed, and the measured spectra with being measured in step a) compares；If comparing result is consistent, then combine currently
Zero-order diffractive spectrum and the parameter of the far field super lens are simulated, the critical size parameter of sample to be tested is calculated.
2. according to the method described in claim 1, it is characterized in that, the far field super lens are by one-dimensional metal silver-glass raster
It is formed with metallic silver thin plate.
3. according to the method described in claim 2, it is characterized in that, gold of the sample to be tested in the far field super lens
Belong to silver-colored thin plate one side.
4. according to the method described in claim 1, it is characterized in that, the vector analysis algorithm in the step b) is stringent coupling
Wave analysis method；Comparison algorithm in the step c) is the literary Burger-Ma Kuaertefa of row.
5. according to the method described in claim 1, it is characterized in that, the light source in the step a) is parallel TM polarised lights.
6. according to the method described in claim 1, it is characterized in that, it is between the far field super lens and the sample surface
Air layer, the thickness of the air layer are less than 0.5 micron；
Preferably, it is air layer between the far field super lens and the sample surface, the thickness of the air layer is 0.02
Micron is to 0.5 micron.
A kind of 7. sub-wavelength dimensions microelectronic structure optical critical dimension device for testing and analyzing, which is characterized in that described device bag
It includes：Wide spectrum light source, control device of light beam, far field super lens, detecting lenses, spectrometer and software analysis platform, the far field are super
Mirror is parallel to be placed in sample to be tested surface；
After the light beam that the wide spectrum light source is launched is by the control device of light beam, incide into successively the far field super lens and
The surface of the sample to be tested simultaneously generates emergent light, and emergent light is detected to obtain outgoing spectrum letter by spectrometer by detecting lenses
Number, outgoing spectral signal inputs the critical size parameter of output sample to be tested after the software analysis platform.
8. device according to claim 7, which is characterized in that the far field super lens are by one-dimensional metal silver-glass raster
It is formed with metallic silver thin plate；The objective table for accurately controlling height coordinate with one by the far field super lens with it is described to be measured
Air thickness control between sample is within 0.5 micron.
9. device according to claim 7, which is characterized in that the grating period A of the metallic silver-glass raster2With institute
State the grating period A of sample to be tested1Difference be misplace cycle of parameter δ, δ be ε, wherein：ε is │ liΛ1-piΛ2│ is in addition to 0
Minimum value, liFor 1 to l positive integer, piFor 1 to p positive integer, l and p is positive integer and greatest common divisor is 1 and meets l Λ1
=p Λ2。
10. device according to claim 7, which is characterized in that the light beam that the wide frequency light source is sent is converging beam；
It is further preferred that the wide frequency light source is the light source introduced by fibre-optical splice coupled into optical fibres；
Preferably, the control device of light beam include pin hole or fibre-optical splice, the first collimation lens group, polarizer, adjustable diaphragm and
First convergence lens set, the control device of light beam are used to implement with special polarization state, polarization direction, convergence angle and minimum inspection
Survey the detection light beam of hot spot；The first collimation lens group can carry out the broad-spectrum beam that spectral range is 190nm-1100nm
Achromatism collimates；The first convergence lens set can carry out achromatism to the broad-spectrum beam that spectral range is 190nm-1100nm
Convergence；The polarizer adjusts the polarization direction of light beam for obtaining linearly polarized light；Adjustable diaphragm is straight for adjusting light beam
Footpath, beam diameter determine the convergence angle of detection light beam, and influence the size of minimum convergence hot spot；
Preferably, the detecting lenses include the second collimation lens group and the second convergence lens set；The second collimation lens group
Achromatism collimation can be carried out to the broad-spectrum beam that spectral range is 190nm-1100nm, the second convergence lens set can be to ripple
The broad-spectrum beam that spectral limit is 190nm-1100nm carries out achromatism convergence and is coupled into the spectrometer；
Preferably, the spectral range of the spectrometer detection is 190nm-1100nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111065912A (en) * | 2019-12-04 | 2020-04-24 | 长江存储科技有限责任公司 | Inspection system for semiconductor device and related inspection method |
| CN112147105A (en) * | 2019-06-27 | 2020-12-29 | 深圳市帝迈生物技术有限公司 | Microfluidic sample analysis device |
| CN113532280A (en) * | 2021-06-04 | 2021-10-22 | 华南师范大学 | Liquid crystal optical ruler for measuring nano-scale displacement and preparation method thereof |
| CN113671612A (en) * | 2021-08-25 | 2021-11-19 | 浙江水晶光电科技股份有限公司 | Super-surface optical element, design method and structured light projection module |
| CN114674240A (en) * | 2022-03-25 | 2022-06-28 | 中国科学院微电子研究所 | Deformation measurement method and device, electronic equipment and storage medium |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529827A (en) * | 2000-09-15 | 2004-09-15 | �����ʼ� | Generation of library of periodic grating diffraction signals |
| CN1705888A (en) * | 2002-10-17 | 2005-12-07 | 音质技术公司 | Generating simulated diffraction signals for two-dimensional structures |
| CN101128835A (en) * | 2004-05-28 | 2008-02-20 | 东京毅力科创株式会社 | Shape roughness measurement in optical metrology |
| CN101401080A (en) * | 2006-03-08 | 2009-04-01 | 东京毅力科创株式会社 | Weighting function of enhance measured diffraction signals in optical metrology |
| US20110188032A1 (en) * | 2010-02-04 | 2011-08-04 | Ravi Verma | Far-field superlensing |
| CN103398666A (en) * | 2013-05-27 | 2013-11-20 | 电子科技大学 | Interlayer dislocation testing method for double-layer periodic microstructure |
| CN103940337A (en) * | 2014-04-23 | 2014-07-23 | 电子科技大学 | OCD testing system for critical sizes of micro-structure on basis of micro light spot parallel beam |
-
2016
- 2016-11-30 CN CN201611079665.1A patent/CN108120371A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1529827A (en) * | 2000-09-15 | 2004-09-15 | �����ʼ� | Generation of library of periodic grating diffraction signals |
| CN1705888A (en) * | 2002-10-17 | 2005-12-07 | 音质技术公司 | Generating simulated diffraction signals for two-dimensional structures |
| CN101128835A (en) * | 2004-05-28 | 2008-02-20 | 东京毅力科创株式会社 | Shape roughness measurement in optical metrology |
| CN101401080A (en) * | 2006-03-08 | 2009-04-01 | 东京毅力科创株式会社 | Weighting function of enhance measured diffraction signals in optical metrology |
| US20110188032A1 (en) * | 2010-02-04 | 2011-08-04 | Ravi Verma | Far-field superlensing |
| CN103398666A (en) * | 2013-05-27 | 2013-11-20 | 电子科技大学 | Interlayer dislocation testing method for double-layer periodic microstructure |
| CN103940337A (en) * | 2014-04-23 | 2014-07-23 | 电子科技大学 | OCD testing system for critical sizes of micro-structure on basis of micro light spot parallel beam |
Non-Patent Citations (3)
| Title |
|---|
| 王云新等: "突破衍射极限的远场光学成像方法", 《北京工业大学学报》 * |
| 程琳: "远场超分辨率成像与亚波长聚焦的研究", 《中国博士学位论文全文数据库 基础科学辑》 * |
| 邓浩: "周期结构的衍射模拟算法及其应用研究", 《中国博士学位论文全文数据库 信息科技辑》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112147105A (en) * | 2019-06-27 | 2020-12-29 | 深圳市帝迈生物技术有限公司 | Microfluidic sample analysis device |
| CN111065912A (en) * | 2019-12-04 | 2020-04-24 | 长江存储科技有限责任公司 | Inspection system for semiconductor device and related inspection method |
| US11333614B2 (en) | 2019-12-04 | 2022-05-17 | Yangtze Memory Technologies Co., Ltd. | Inspection system of semiconductor device and related inspection method |
| CN113532280A (en) * | 2021-06-04 | 2021-10-22 | 华南师范大学 | Liquid crystal optical ruler for measuring nano-scale displacement and preparation method thereof |
| CN113671612A (en) * | 2021-08-25 | 2021-11-19 | 浙江水晶光电科技股份有限公司 | Super-surface optical element, design method and structured light projection module |
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