CN108117724A - It is a kind of for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition - Google Patents
It is a kind of for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition Download PDFInfo
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- CN108117724A CN108117724A CN201711421502.1A CN201711421502A CN108117724A CN 108117724 A CN108117724 A CN 108117724A CN 201711421502 A CN201711421502 A CN 201711421502A CN 108117724 A CN108117724 A CN 108117724A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/688—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing phosphorus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/02—Flame or fire retardant/resistant
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
- C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
Abstract
The present invention relates to composition epoxy resin, more particularly to have can with normal temperature storage be suitable for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition.The present invention is by using special accelerating agent that epoxy resin and phenolic resin are arranged in pairs or groups, obtain it is a kind of for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition, substantially increase composition epoxy resin room temperature usage time, it disclosure satisfy that the technique and reliability requirement to semiconductor packages again simultaneously, can be particularly a kind of semiconductor-sealing-purpose material of low-carbon environment-friendly with the requirement of normal temperature storage type ring epoxy resin composition.The normal temperature storage type ring epoxy resin composition of the present invention has been also equipped with necessary mobility, fillibility, anti-flammability simultaneously.
Description
Technical field
The present invention relates to composition epoxy resin, more particularly to normal temperature storage performance, and it is building-up property, reliable
It is of good performance suitable for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition.
Background technology
In the application aspect of semicon industry, for the composition epoxy resin of encapsulation, stored up below 5 DEG C of basic need low temperature
Deposit, transport, and after rising again usage time be no more than 48 it is small when.Because being used for the composition epoxy resin of semiconductor-sealing-purpose, normal
Self-crosslinking reaction at a slow speed can be carried out under temperature state, the time is longer, and crosslink density is about big, and gel is serious, can not normal use.So
Need under certain low-temperature condition store, transport, and under room temperature usage time for 48 it is small when it is interior.With global low-carbon environment-friendly
Development trend, have very big space that can realize low-carbon environment-friendly demand for the composition epoxy resin of semiconductor packages.As
The main accelerating agent for influencing the composition epoxy resin for semiconductor packages, if reducing the usage amount of accelerating agent, appropriate
The room temperature usage time of composition epoxy resin can be increased, but the packaging time in encapsulation process can be caused to increase, reduce effect
Rate can not meet customer need, while also indirect branch energy consumption, be unable to reach effective low-carbon environment-friendly.
The content of the invention
It is good with building-up property, unfailing performance so as to provide the purpose of the present invention is in view of the deficiencies of the prior art
It is good for semiconductor packages can normal temperature storage type ring epoxy resin composition.
Applicants have unexpectedly found that by the way that traditional accelerating agent is complexed, the activity reduction of complex compound at normal temperatures,
But the complete activity recovery at 130-180 DEG C of high temperature, traditional epoxide resin polymer can be solved and progressively gathered at normal temperatures
It closes, the problem of can not storing for a long time.
Technical scheme is as follows：
The present invention for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition, it is characterized in that,
The structural formula of the curing accelerator is as follows：
Wherein A is selected from one or more of imidazolium compounds, tertiary amine compound and organic phosphine compound.
The component and weight percentage of the normal temperature storage type ring epoxy resin composition are as follows：
The asphalt mixtures modified by epoxy resin that can be used in normal temperature storage type ring epoxy resin composition for semiconductor-sealing-purpose of the present invention
Fat to have the monomer, oligomer or polymer of 2 or more epoxide groups in 1 epoxy molecule, molecular weight and molecular structure without
It is particularly limited to.Above-mentioned epoxy resin can be selected from o-cresol formaldehyde epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy tree
Fat, linear phenolic epoxy resin, biphenyl type epoxy resin, dicyclopentadiene type epoxy resin, open chain aliphatic epoxy resin, fat
One or more of ring race epoxy resin and heterocyclic-type epoxy resin etc..
The acid anhydrides choosing that can be used in normal temperature storage type ring epoxy resin composition for semiconductor-sealing-purpose of the present invention
From one or more of aromatic anhydride, alicyclic acid anhydrides, long-chain fat race acid anhydrides and halogenated acid anhydrides machine acid anhydride adduct.
The present invention for semiconductor-sealing-purpose can be used in normal temperature storage type ring epoxy resin composition inorganic fill out
Material can be selected from one or more of SiO 2 powder, alumina powder, alpha-silicon nitride powders and aluminium nitride powder etc..It is above-mentioned
SiO 2 powder, alumina powder, alpha-silicon nitride powders, aluminium nitride powder may be used alone or in combination.It is in addition, described
The surface of inorganic filler can be surface-treated using silane coupling agent.
The SiO 2 powder, alumina powder, the meso-position radius (D50) of alpha-silicon nitride powders and aluminium nitride powder are all
10~40 microns.
The fire retardant that the fire retardant coordinates for brominated epoxy resin with antimony oxide, wherein, brominated epoxy resin
Weight ratio with antimony oxide is 10：1, the weight percentage of the fire retardant in the composition is 1.5%.
The weight percentage of the curing accelerator in the composition is 0.05%.
The imidazolium compounds is selected from 2-methylimidazole, 2,4- methylimidazoles, 2-ethyl-4-methylimidazole, 2- benzene
One or more of base imidazoles, 2- phenyl -4-methylimidazole and 2- (heptadecyl) imidazoles etc..
The tertiary amine compound is selected from triethylamine benzyl group dimethylamine, Alpha-Methyl benzyl group dimethylamine, 2- (dimethylamino first
Base) one kind in -7 grade of phenol, 2,4,6- tri- (dimethylamino methyl) phenol and 1,8- diazabicyclo (5,4,0) endecatylene
It is or several.
The organic phosphine compound is selected from triphenylphosphine, trimethyl-phosphine, triethyl phosphine, tributylphosphine, three (to methylbenzene
One or more of base) phosphine and three (nonyl phenyl) phosphines etc..
The releasing agent can be selected from one or more of Brazil wax, synthetic wax and mineral matter wax.Described
The weight percentage of releasing agent in the composition is 0.5%.
The inorganic ion scavenger includes but not limited to selected from hydrated metal oxide (such as Bi2O3·3H2O it is), acid
Metal salt is (such as：Zr(HPO4)2·H2O) and the compound of magnalium (such as：Mg6Al2(CO3)(OH)16·4H2O one kind or several in)
Kind.The weight percentage of the inorganic ion scavenger in the composition is 0.45%.
The silane coupling agent can be selected from γ-glycidyl propyl ether trimethoxy silane, three second of gamma-amino propyl
One or more of oxysilane, γ mercaptopropyitrimethoxy silane and γ-aminopropyltrimethoxysilane.Described
The weight percentage of silane coupling agent in the composition is 0.5%；
The colorant is carbon black.The weight percentage of the colorant in the composition is 0.5%.
Described low stress modified dose is liquid silicone oil, silicone rubber powder or their mixture etc..The low stress
The weight percentage of modifying agent in the composition is 1%.
The present invention for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition preparation method：Institute will be accounted for
State can normal temperature storage type ring epoxy resin composition total amount the epoxy resin of 6~10wt%, the acid anhydrides of 4~7wt%, 79-
The inorganic filler of 86wt%, the fire retardant of 1~1.5wt%, the curing accelerator of 0.05~0.1wt%, 0.4~0.6wt%
Releasing agent, the inorganic ion scavenger of 0.4~0.6wt%, the silane coupling agent of 0.4~0.6wt%, 0.4~0.6wt%
Low stress modified dose of toner and 0.8~1wt% is uniformly mixed, and is then 70~100 DEG C in temperature by obtained mixture
Melting mixing is uniform on double roll mills, by the uniform material of melting mixing removed from double roll mills natural cooling,
Crush, obtain it is described for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition powder-material；It is further pre-
Be shaped to biscuit, obtain for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition moulding material.
The present invention in normal temperature storage type ring epoxy resin composition for semiconductor-sealing-purpose by that can add a kind of rush
Into agent, which can allow epoxy resin and acid anhydrides to keep not reacting or seldom reacting at normal temperatures, fast at 175 DEG C of high temperature
Speed reaction, obtain it is a kind of can the normal temperature storage composition epoxy resin of 30 days be used for semiconductor-sealing-purpose material.The present invention's can
Normal temperature storage type ring epoxy resin composition has been also equipped with necessary mobility, fillibility, anti-flammability simultaneously.
It further illustrates the present invention with reference to embodiments, but this is only citing, is not limitation of the present invention.
Specific embodiment
Embodiment 1
Cycloaliphatic epoxy resin A1 (the big Japanese ink HP-4700 of Japan) 8wt%
Acid anhydrides B1 (Taiwan South Asia system " tetrahydrophthalic anhydride ") 6wt%
SiO 2 powder D1 (d50 is 20 μm) 82wt%
(weight ratio of brominated epoxy resin and antimony oxide is 10 for fire retardant brominated epoxy resin and antimony oxide：
1) 1.5wt%
Curing accelerator C1 (converge initiative TPP-BQ in Shanghai) 0.05wt%
Brazil wax 0.5wt%
Inorganic ion scavenger 0.45wt% (Japanese TOAGOSEI Co., Ltd IXE500 (Bi2O3·3H2O))
γ-glycidyl propyl ether trimethoxy silane 0.5wt%
Carbon black 0.5wt%
Liquid silicone oil 0.5wt%
Silicone rubber powder 0.5wt% (d50 is 1 μm)
It weighs according to said ratio and after mixing, obtained mixture is preheated again in temperature for 70~100 DEG C
Melting mixing is uniform on double roll mills, by the uniform material of melting mixing removed from double roll mills natural cooling,
Crush, obtain for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition powder-material；Then it is pre-formed as cake
Material, obtain for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition moulding material.Using the following method to obtaining
To for semiconductor-sealing-purpose can the moulding material of normal temperature storage type ring epoxy resin composition evaluated, the results are shown in Table 1.
Gel time：Electric hot plate is heated to 175 ± 1 DEG C by hot plate method, takes the above-mentioned moulding material samples of 0.3~0.5g
Powder is placed on electric hot plate, and powder is terminal when gradually becoming colloidal state by fluid, the time required to reading.
Spiral flow length：It is measured on transfer modling press by EMMI-1-66 helical flows metal die, shaping pressure
Power is 70 ± 2Kgf/cm2, mold temperature is 175 ± 2 DEG C, and 20 ± 5g of powder of above-mentioned moulding material sample is taken to be tested.
Melt viscosity：The high heat conduction type ring epoxy resin composition measured using the heightization Flow Meter of Japanese Shimadzu Corporation
The melt viscosity of moulding material.Test condition：Mouth mold is 0.5 × 1.0mm, and load 10kg, temperature is 175 DEG C.
Tg：Above-mentioned moulding material sample is made under the conditions of 175 DEG C/25Mpa the sample block of diameter 3mm, high 6mm, then
Solidify afterwards are carried out under conditions of 175 DEG C/6h, are tested using the thermomechanical analyzer TMA of U.S. TA, test condition 20-300
DEG C, 10 DEG C/min of heating rate.
Anti-flammability：Above-mentioned moulding material sample is made under the conditions of 175 DEG C/25Mpa the sample block of 1/16 inch thickness, so
Solidify afterwards are carried out under conditions of 175 DEG C/6h afterwards, flame retardant test is carried out according to GB4609-84 finally by vertical combustion.
The normal temperature storage phase：Under the conditions of above-mentioned moulding material sample is placed 20-25 DEG C, gel time and helix length with just
Beginning data are maintained at the maximum duration of variation in certain excursion.Gel time excursion ± 3s, helix length variation model
Enclose ± 5cm.
Embodiment 2~8
Can the composition of normal temperature storage type ring epoxy resin composition be shown in Table 1, preparation method is with embodiment 1, and evaluation method is the same as real
Example 1 is applied, evaluation result is shown in Table 1.
Comparative example 1~4
The composition of composition epoxy resin is shown in Table 2, and preparation method is with embodiment 1, and evaluation method is the same as embodiment 1, evaluation knot
Fruit is shown in Table 2.
Embodiment 2~8, comparative example 1~4 composition epoxy resin in the ingredient beyond embodiment 1 that uses it is as follows
It is shown.
Cycloaliphatic epoxy resin A2 (Japanese Daicel system " EHPE-3150 ")
O-cresol formaldehyde epoxy resin A3 (Japanese DIC Corporation systems " N-665 ")
Acid anhydrides B2 (commercially available " methylnadic anhydride ")
Phenol alkyl phenolic resin B3 (Mitsui Chemicals, Inc. systems " XLC-4L ")
Curing accelerator DBU C2 (commercially available)
Alundum (Al2O3) powder D2 (d50 is 25 μm)
Table 1：The composition and evaluation result (by weight percentage) of example composition
Table 2：The composition and evaluation result (by weight percentage) of comparative example composition
It can be seen that by above-described embodiment and comparative example, after the curing accelerator of specially treated, be higher than 220 keeping Tg
DEG C, outside the unfailing performance of encapsulation high-voltage semi-conductor device, normal temperature storage performance is increased to 35 days or more, hence it is evident that better than not plus special
The conventional epoxies composition of the curing accelerator of processing.
Claims (10)
1. it is a kind of for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition, which is characterized in that
The component and weight percentage of the normal temperature storage type ring epoxy resin composition are as follows：
The structural formula of the curing accelerator is as follows：
Wherein A is selected from one or more of imidazolium compounds, tertiary amine compound and organic phosphine compound.
2. it is according to claim 1 for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition, feature
It is：The epoxy resin is selected from o-cresol formaldehyde epoxy resin, bisphenol A type epoxy resin, bisphenol f type epoxy resin, linear
Novolac epoxy resin, biphenyl type epoxy resin, dicyclopentadiene type epoxy resin, open chain aliphatic epoxy resin, aliphatic ring
One or more of oxygen resin and heterocyclic-type epoxy resin.
3. it is according to claim 1 for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition, feature
It is：The acid anhydrides is selected from aromatic anhydride, alicyclic acid anhydrides, long-chain fat race acid anhydrides and halogenated acid anhydrides machine acid anhydride adduct
One or more of.
4. it is according to claim 1 for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition, feature
It is：The one kind of the inorganic filler in SiO 2 powder, alumina powder, alpha-silicon nitride powders and aluminium nitride powder
Or it is several, the SiO 2 powder, alumina powder, the meso-position radius of alpha-silicon nitride powders and aluminium nitride powder are all 10~40
Micron.
5. it is according to claim 1 for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition, feature
It is：The fire retardant that the fire retardant coordinates for brominated epoxy resin with antimony oxide, wherein, brominated epoxy resin and three
The weight ratio for aoxidizing two antimony is 10：1, the weight percentage of the fire retardant in the composition is 1.5%.
6. it is according to claim 1 for semiconductor-sealing-purpose can normal temperature storage composition epoxy resin, feature exists
In：The weight percentage of the curing accelerator in the composition is 0.05%.
7. it is according to claim 1 for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition, feature
It is：
The imidazolium compounds is selected from 2-methylimidazole, 2,4- methylimidazoles, 2-ethyl-4-methylimidazole, 2- phenyl miaows
One or more of azoles, 2- phenyl -4-methylimidazole and 2- (heptadecyl) imidazoles；
The tertiary amine compound is selected from triethylamine benzyl group dimethylamine, Alpha-Methyl benzyl group dimethylamine, 2- (dimethylamino methyl) benzene
Phenol, 2, one or more of 4,6- tri- (dimethylamino methyl) phenol and 1,8- diazabicyclo (5,4,0) endecatylene -7；
The organic phosphine compound is selected from triphenylphosphine, trimethyl-phosphine, triethyl phosphine, tributylphosphine, three (p-methylphenyls)
One or more of phosphine and three (nonyl phenyl) phosphines.
8. it is according to claim 1 for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition, feature
It is：
The releasing agent is selected from one or more of Brazil wax, synthetic wax and mineral matter wax；The releasing agent exists
Weight percentage in composition is 0.5%；
The silane coupling agent is selected from γ-glycidyl propyl ether trimethoxy silane, gamma-amino propyl-triethoxysilicane
One or more of alkane, γ mercaptopropyitrimethoxy silane and γ-aminopropyltrimethoxysilane；The silane is even
It is 0.5% to join the weight percentage of agent in the composition；
The colorant is carbon black；The weight percentage of the colorant in the composition is 0.5%；
Described low stress modified dose is liquid silicone oil, silicone rubber powder or their mixture；Described low stress modified dose
Weight percentage in the composition is 1%.
9. it is according to claim 1 for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition, feature
It is：One kind in compound of the inorganic ion scavenger selected from hydrated metal oxide, acid metal salt and magnalium
Or it is several, the weight percentage of the inorganic ion scavenger in the composition is 0.45%.
10. it is according to claim 9 for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition, feature
It is：The hydrated metal oxide is Bi2O3·3H2O, the acid metal salt are Zr (HPO4)2·H2O, it is described
The compound of magnalium is Mg6Al2(CO3)(OH)16·4H2O。
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| CN201711421502.1A CN108117724A (en) | 2017-12-25 | 2017-12-25 | It is a kind of for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition |
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| CN201711421502.1A CN108117724A (en) | 2017-12-25 | 2017-12-25 | It is a kind of for semiconductor-sealing-purpose can normal temperature storage type ring epoxy resin composition |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4132706A (en) * | 1974-06-21 | 1979-01-02 | The Dow Chemical Company | Latent catalysts for promoting reaction of epoxides with phenols and/or carboxylic acids |
| CN106674892A (en) * | 2015-11-09 | 2017-05-17 | 北京首科化微电子有限公司 | Highly heat-conducting epoxy resin composition for fully encapsulated semiconductor device |
-
2017
- 2017-12-25 CN CN201711421502.1A patent/CN108117724A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4132706A (en) * | 1974-06-21 | 1979-01-02 | The Dow Chemical Company | Latent catalysts for promoting reaction of epoxides with phenols and/or carboxylic acids |
| CN106674892A (en) * | 2015-11-09 | 2017-05-17 | 北京首科化微电子有限公司 | Highly heat-conducting epoxy resin composition for fully encapsulated semiconductor device |
Non-Patent Citations (1)
| Title |
|---|
| 李志生等: ""环氧-酚醛树脂体系用固化促进剂的研究与发展"", 《绝缘材料》 * |
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Application publication date: 20180605 |
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