CN108111047A - High temperature pulse power supply with DC over-voltage protection - Google Patents
High temperature pulse power supply with DC over-voltage protection Download PDFInfo
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- CN108111047A CN108111047A CN201711435647.7A CN201711435647A CN108111047A CN 108111047 A CN108111047 A CN 108111047A CN 201711435647 A CN201711435647 A CN 201711435647A CN 108111047 A CN108111047 A CN 108111047A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/10—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for converters; for rectifiers
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Emergency Protection Circuit Devices (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention provides a kind of high temperature pulse power supply with DC over-voltage protection, is related to pulse field of power supplies；The power supply includes current rectifying and wave filtering circuit, alternating current protection circuit, inversion unit, boosting unit and DC over-voltage protection circuit; the current rectifying and wave filtering circuit includes capacitance C9 and diode D7; the DC over-voltage protection circuit includes voltage-stabiliser tube ZD1 ', resistance R16 and voltage-stabiliser tube ZD4; negative pole end, the cathode of the cathode connecting diode D7 of the voltage-stabiliser tube ZD1 ' passes through the anode of resistance R16 connection voltage-stabiliser tubes ZD4, the cathode connection power cathode of the voltage-stabiliser tube ZD4.The present invention protects exchange abnormal voltage, in 0~380Vac gamuts, all plays protective action, operating temperature is up to 225 DEG C.
Description
Technical field
The present invention relates to pulse field of power supplies, more particularly, to a kind of high temperature pulse electricity with DC over-voltage protection
Source.
Background technology
High temperature pulse power supply is a kind of in the rated direct voltage of 200~230Vdc of its input terminal access, and meeting is defeated
Go out high voltage, the pulse energy of high current.This power work environment temperature high (reaching as high as 225 DEG C), live electric power thus supplied
It is complicated (to have the ac/dc voltage that other various equipment need each voltage class, AC voltage range：0~380Vac, direct current
Voltage range：0~300Vdc), input end cable length (up to 10km) and mix with other cables.
When this power supply product due to wiring error or due between input cable insulating layer breakage cause product input terminal
When having accessed abnormal alternating voltage (this voltage may be 0~380Vac of exchange arbitrary values), product cannot work and non-
It is often easily damaged, therefore this product is usually required for increasing the safeguard function to abnormal alternating voltage.
Fig. 1 provides a kind of harmonics circuit of existing product, and operation principle is as follows：
When input terminal incoming transport 176~310V voltages, through D1 ' rectifications, the filtered DC voltages of C1 ' for 250~
450Vdc, this has been more than the operating voltage (160~250Vdc) of product.What C1 ' both end voltages obtained after R1 ', R2 ' partial pressure adopts
Sample voltage will be greater than preset reference voltage V ref.U1 ' exports high level, and Q2 ' conductings drag down Q1 ' gate voltages, Q1 '
It turns off, main circuit cannot get voltage, it is impossible to work.
The circuit shortcoming：
1st, because in this circuit, to make sampled voltage more stable, the capacity that C1 ' need be larger, only selection electricity
Solve capacitance.And electrolytic capacitor is pressure-resistant limited, highest only has 450V, and electrolytic capacitor temperature in use is low, and highest only has 150 DEG C.
Therefore, which only has the exchange of 176~310Vac this scope protective action, and the environment temperature applied only up to arrive
150 DEG C, and product actual work temperature, often less than 225 DEG C, product will be unable to protect at this time.
If the 2, input terminal has accessed the alternating voltage of 310~380Vac, the DC power supply after D1 ' rectifications 450~
Between 540Vdc, electrolytic capacitor C1 ' will explode.
If the 3, the alternating voltage of input terminal access is in 113~176Vac in the range of this, after D1 ' rectifications, C1 ' both ends
Voltage between 160~250Vdc, through R1 ', R2 ' partial pressure after obtained sampling be less than preset reference voltage
Vref, U1 ' output low level, Q2 ' disconnections, Q1 ' gate voltages are height, and Q1 ' is open-minded, and product main circuit obtains 160~250Vdc
Voltage, product work, protection circuit are completely ineffective.
The 4th, if environment temperature reaches 225 DEG C, electrolytic capacitor C1 ' also can leakage, damage, cause product failure.
The content of the invention
It is an object of the invention to：In view of the problems of the existing technology, a kind of high temperature with DC over-voltage protection is provided
Pulse power supply solves the problems, such as the alternating current narrow range that existing high temperature pulse power supply can protect, solves existing high temperature list
The problem of pulse power easily sends explosion when accessing high voltage alternating current, solving existing high temperature pulse power supply can not be in high temperature
Lower the problem of realizing exchange protection.
The goal of the invention of the present invention is achieved through the following technical solutions：
A kind of high temperature pulse power supply with DC over-voltage protection, which is characterized in that the power supply include current rectifying and wave filtering circuit,
Alternating current protection circuit, inversion unit, boosting unit and DC over-voltage protection circuit, the current rectifying and wave filtering circuit include capacitance C9 and
Diode D7, the DC over-voltage protection circuit include voltage-stabiliser tube ZD1 ', resistance R16 and voltage-stabiliser tube ZD4, the voltage-stabiliser tube ZD1 '
The negative pole end of cathode connecting diode D7, cathode by the anode of resistance R16 connection voltage-stabiliser tubes ZD4, the voltage-stabiliser tube ZD4's
Cathode connects power cathode.
Preferably, the alternating current protection circuit include capacitance C20, resistance R14, diode D9, diode D8, resistance R15,
Resistance R18, capacitance C21, metal-oxide-semiconductor Q2, resistance R17 ', resistance R19 and metal-oxide-semiconductor Q1, the capacitance C9 are connected in parallel on the both ends of power supply,
Positive terminal connection positive pole, the negative pole end connection inversion unit of the diode D7, one end of the capacitance C20 connects two poles
By the cathode of resistance R14 connection diodes D9, the anode connection power supply of the diode D9 is born for the positive terminal of pipe D7, the other end
Pole, the anode of the diode D8 is connected between capacitance C20 and resistance R14, negative pole end is sequentially connected in series resistance R15 and resistance
Power cathode is connected after R18, the grid of the metal-oxide-semiconductor Q2 is connected between resistance R15 and resistance R18, and the one of the capacitance C21
Grid, the other end connection power cathode of end connection metal-oxide-semiconductor Q2, the resistance R17 ' is connected in parallel on whole again after connecting with resistance R19
Between two output terminals for flowing filter circuit, the source electrode of the metal-oxide-semiconductor Q2 is connected to power cathode, drain electrode is connected to resistance R17 '
Between resistance R19, the grid of the metal-oxide-semiconductor Q1 is connected between resistance R17 ' and resistance R19, source electrode is connected to power supply and bears
Pole, drain electrode are connected to inversion unit, and the grid of the metal-oxide-semiconductor Q2 is connected between the anode of resistance R16 and voltage-stabiliser tube ZD4.
Preferably, the diode D7 is the reversed pressure-resistant diode more than 600V；The capacitance C20 exists for capacitance
0.01uF~0.1uF, and the pressure-resistant multi-layer ceramic capacitance more than 600V；The capacitance C21 is capacitance 0.1uF~1uF's
Multi-layer ceramic capacitance；The resistance R14 and resistance R15 is resistance value 10k Ω~100k Ω, and power is more than or equal to 1/4W's
Resistance.
Preferably, the resistance R14 and resistance R15 is reduced to resistance a R14 ', the capacitance C20 and passes through resistance R14 '
Diode D9 and diode D8 is connected respectively.
Preferably, the resistance R14 ' is resistance value 10k Ω~100k Ω, and power is greater than or equal to the resistance of 1/4W.
Preferably, the voltage stabilizing value of the voltage-stabiliser tube ZD1 ' is 225V~230V, and voltage-stabiliser tube ZD1 ' is by 1~50 voltage-stabiliser tube
It is in series.
Preferably, the voltage stabilizing value of the voltage-stabiliser tube ZD4 is 10V~24V, and voltage-stabiliser tube ZD4 is connected by 1~30 voltage-stabiliser tube
It forms.
Preferably, which further includes direct current under-voltage protecting circuit, and the direct current under-voltage protecting circuit includes voltage-stabiliser tube
ZD5 ', resistance R2, resistance R10 ' and capacitance C16, the inversion unit include control IC and metal-oxide-semiconductor Q3, the boosting unit bag
Primary coil and secondary coil are included, the negative pole end of the cathode connecting diode D7 of the voltage-stabiliser tube ZD5 ', voltage-stabiliser tube ZD5's ' is negative
Pole is sequentially connected in series resistance R2, resistance R10 ' is followed by the drain electrode of metal-oxide-semiconductor Q1, and the startup voltage end of the control IC is connected to resistance
Between R2 and resistance R10 ', the control terminal of IC is controlled to connect the grid of metal-oxide-semiconductor Q3, the source electrode connection direct current mistake of the metal-oxide-semiconductor Q3
The cathode output end of voltage protection circuit, one end of the drain electrode connection primary coil of the metal-oxide-semiconductor Q3, the other end of primary coil connect
Meet the negative pole end of diode D7, startup voltage end, the other end connection metal-oxide-semiconductor Q1 of one end connection control IC of the capacitance C16
Drain electrode.
Preferably, the voltage stabilizing value of the voltage-stabiliser tube ZD5 ' is 150V~160V, and voltage-stabiliser tube ZD5 ' is by 1~10 voltage-stabiliser tube
It is in series.
Compared with prior art, the present invention has the following advantages：
1st, the present invention protects exchange abnormal voltage, in 0~380Vac gamuts, all plays protection and makees
With operating temperature is up to 225 DEG C；
2nd, the present invention can also protect direct current under-voltage, in input undervoltage, control IC power supplies not given, in volume
Constant voltage scope is increased to the supply current of control IC, and product is made also reliably to start in the case of a high temperature；
3rd, the present invention can also protect DC over-voltage, in a manner that voltage-stabiliser tube adds sampling resistor, input
During electric voltage over press, larger electric current can be generated on sampling resistor, it at high temperature also can reliably working.
Description of the drawings
Fig. 1 is the harmonics circuit diagram of existing high temperature pulse power supply；
Fig. 2 is the harmonics circuit diagram of the present invention；
Fig. 3 is the circuit diagram for increasing direct current protection on the basis of the present invention；
Fig. 4 is the physical circuit figure of the present invention with alternating current and direct current protection；
Fig. 5 is the physical circuit figure of another present invention with alternating current and direct current protection.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1
The present invention provides a kind of high temperature pulse power supply with DC over-voltage protection, as shown in Fig. 2, the power supply is mainly by whole
Flow filter circuit, alternating current protection circuit, inversion unit, boosting unit, rectification unit, energy-storage units composition.Wherein, boosting unit
Mainly it is made of primary coil and secondary coil.The power input connection current rectifying and wave filtering circuit of alternating current protection circuit.Exchange is anti-
The output terminal connection inversion unit of protection circuit.Inversion unit connects boosting unit.Boosting unit connects rectification unit.Energy-storage units
Connect rectification unit.Energy-storage units are by switching connection load.
Current rectifying and wave filtering circuit is mainly made of capacitance C9 and diode D7.Alternating current protection circuit is mainly by capacitance C20, resistance
R14, diode D9, diode D8, resistance R15, resistance R18, capacitance C21, metal-oxide-semiconductor Q2, resistance R17 ', resistance R19 and metal-oxide-semiconductor
Q1 is formed.Capacitance C9 is connected in parallel on the both ends of power supply.Positive terminal connection positive pole, the negative pole end connection inversion list of diode D7
Member.The positive terminal of one end connection diode D7 of capacitance C20, the other end by the cathode of resistance R14 connection diodes D9 (due to
The position of series connection, diode D9 and resistance R14 are commutative).The anode connection power cathode of diode D9.The anode of diode D8
Be connected between capacitance C20 and resistance R14, negative pole end is sequentially connected in series resistance R15 and resistance R18 after connect power cathode.Metal-oxide-semiconductor
The grid of Q2 is connected between resistance R15 and resistance R18.The grid of one end connection metal-oxide-semiconductor Q2 of capacitance C21, other end connection
Power cathode.Resistance R17 ' is connected in parallel on after connecting with resistance R19 again between two output terminals of current rectifying and wave filtering circuit.Metal-oxide-semiconductor Q2
Source electrode be connected to power cathode, drain electrode be connected between resistance R17 ' and resistance R19.The grid of metal-oxide-semiconductor Q1 is connected to resistance
Between R17 ' and resistance R19, source electrode is connected to power cathode, drain electrode is connected to inversion unit.
The reversed pressure-resistant diodes more than 600V such as diode D7 selections 1N4007, FR107, BYV26E.Resistance R17 '
There can be several resistance to be in series, the present embodiment is composed in series using resistance R17 and resistance R20.Capacitance C20 exists for capacitance
0.01uF~0.1uF, and the pressure-resistant multi-layer ceramic capacitance more than 600V.Capacitance C21 is multilayer of the capacitance in 0.1uF~1uF
Ceramic condenser.Resistance R14 and resistance R15 is resistance value 10k Ω~100k Ω, and power is greater than or equal to the resistance of 1/4W.
In the present embodiment, due to C20 requirement high pressures in circuit, capacity is small, and C21 capacity requireds are big and resistance to be forced down, so
Heat safe ceramic condenser can be used in C20 and C321.0.01uF/1kV patch capacitors can be selected in C20, and C21 can be selected
0.47uF/50V patch capacitors.Even if input terminal alternating voltage is 380Vac (crest voltage 540V), also can reliably working.
When input terminal misconnection enters alternating voltage, when alternating voltage rises (0 °~90 ° of sinusoidal waveform), electric current is through capacitance
C20, diode D8, resistance R15, capacitance C21 charge to capacitance C20 and capacitance C21.(the sinusoidal waveform when alternating voltage declines
90 °~270 °), electric current discharges to capacitance C20 through diode D9, resistance R14, capacitance C20.(sinusoidal waveform when rising again
270 °~2+90 ° of π), and charge to capacitance C20 and capacitance C21.So in cycles, capacitance C21 both ends can maintain an electricity
Pressure turns on metal-oxide-semiconductor Q2, drags down metal-oxide-semiconductor Q1 gate voltages, metal-oxide-semiconductor Q1 shut-offs, main circuit does not work, anti-so as to play exchange
Shield acts on.
Embodiment 2
The present embodiment is the improvement based on embodiment 1, and circuit structure is as shown in figure 5, mainly by resistance R14 and resistance
R15 is reduced to a resistance R14 '.Capacitance C20 connects diode D9 and diode D8 respectively by resistance R14 '.Resistance R14 '
For resistance value 10k Ω~100k Ω, and power is greater than or equal to the resistance of 1/4W.
Embodiment 3
The present embodiment adds DC over-voltage protection on the basis of embodiment 1, remaining composition is consistent with embodiment 1.This
The structure chart of embodiment is shown in Figure 3, and DC over-voltage protection circuit includes voltage-stabiliser tube ZD1 ', resistance R16 and voltage-stabiliser tube ZD4.
The DC over-voltage protection circuit shares capacitance C21 with alternating current protection circuit.The cathode connecting diode D7's of voltage-stabiliser tube ZD1 ' is negative
Extremely, the anode that cathode passes through resistance R16 connection voltage-stabiliser tubes ZD4.The cathode connection power cathode of voltage-stabiliser tube ZD4.Metal-oxide-semiconductor Q2's
Grid is connected between the anode of resistance R16 and voltage-stabiliser tube ZD4.
The voltage-stabiliser tube ZD1 ' of the present invention can be in series by 1~50 voltage-stabiliser tube, as long as the voltage stabilizing after single or series connection
The sum of value is between 225V~230V.Voltage-stabiliser tube ZD4 can also by the series connection of 1~30 voltage-stabiliser tube and, as long as single or string
Voltage stabilizing value after connection is 10V~24V.
In the present embodiment, the voltage stabilizing value of voltage-stabiliser tube ZD1 ' take 225V (in actual track can by 3 voltage-stabiliser tube ZD1, ZD2,
ZD3 is in series), when input direct voltage is more than 230Vdc, voltage-stabiliser tube ZD1 ' breakdown, resistance R16 charges to capacitance C21,
When capacitance C21 both end voltages are more than metal-oxide-semiconductor Q2 threshold voltages, metal-oxide-semiconductor Q2 conductings drag down metal-oxide-semiconductor Q1 gate voltages, metal-oxide-semiconductor
Q1 is turned off, and main circuit does not work.
Embodiment 4
The present embodiment adds direct current under-voltage protection on the basis of embodiment 1, remaining composition is consistent with embodiment 1.Directly
Stream under-voltage protecting circuit is mainly made of voltage-stabiliser tube ZD5 ', resistance R2, resistance R10 ' and capacitance C16.Inversion unit includes control
IC and metal-oxide-semiconductor Q3.Boosting unit includes primary coil and secondary coil.The cathode of the cathode connecting diode D7 of voltage-stabiliser tube ZD5 '
End, the cathode of voltage-stabiliser tube ZD5 ' is sequentially connected in series resistance R2, resistance R10 ' is followed by the drain electrode of metal-oxide-semiconductor Q1.Control the startup electricity of IC
Press bond connects the grid of metal-oxide-semiconductor Q3 between resistance R2 and resistance R10 ', controlling the control terminal of IC.The source electrode of metal-oxide-semiconductor Q3
Connect the cathode output end of DC over-voltage protection circuit.Metal-oxide-semiconductor Q3 drain electrode connection primary coil one end, primary coil it is another
The negative pole end of one end connection diode D7.Startup voltage end, the other end connection metal-oxide-semiconductor of one end connection control IC of capacitance C16
The drain electrode of Q1.
The voltage-stabiliser tube ZD5 ' of the present invention can be in series by 1~10 voltage-stabiliser tube, as long as the voltage stabilizing after single or series connection
The sum of value is between 150V~160V.What the resistance R10 ' of the present invention was shared by resistance R10 and one with other circuits
Resistance R11 is collectively formed.
In the present embodiment, the voltage stabilizing value of voltage-stabiliser tube ZD5 ' takes 150V (can be gone here and there in actual track by 2 voltage-stabiliser tubes ZD5, ZD65
Join), when input direct voltage is less than 150Vdc, voltage-stabiliser tube ZD5 ' does not puncture, and control IC is without startup voltage, it is impossible to work
Make.When input direct voltage is more than 150Vdc, voltage-stabiliser tube ZD5 ' breakdown, resistance R2 charges to capacitance C16, as capacitance C16 two
After startup threshold voltage of the terminal voltage more than control IC, control IC starts, main circuit work.Circuit is designed as specified straight when inputting
During galvanic electricity pressure (200~230Vdc), resistance R2 is 15~25mA to the charging current of capacitance C16.In this way, even if in high temperature 225
In the case of DEG C, the leakage current of IC is controlled to reach 10mA, control IC can also start.
Embodiment 5
The present embodiment adds direct current under-voltage protection on the basis of embodiment 3, remaining composition is consistent with embodiment 3.Directly
Stream under-voltage protecting circuit is mainly made of voltage-stabiliser tube ZD5 ', resistance R2, resistance R10 ' and capacitance C16.Inversion unit includes control
IC and metal-oxide-semiconductor Q3.Boosting unit includes primary coil and secondary coil.The cathode of the cathode connecting diode D7 of voltage-stabiliser tube ZD5 '
End, the cathode of voltage-stabiliser tube ZD5 ' is sequentially connected in series resistance R2, resistance R10 ' is followed by the drain electrode of metal-oxide-semiconductor Q1.Control the startup electricity of IC
Press bond connects the grid of metal-oxide-semiconductor Q3 between resistance R2 and resistance R10 ', controlling the control terminal of IC.The source electrode of metal-oxide-semiconductor Q3
Connect the cathode output end of DC over-voltage protection circuit.Metal-oxide-semiconductor Q3 drain electrode connection primary coil one end, primary coil it is another
The negative pole end of one end connection diode D7.Startup voltage end, the other end connection metal-oxide-semiconductor of one end connection control IC of capacitance C16
The drain electrode of Q1.
The voltage-stabiliser tube ZD5 ' of the present invention can be in series by 1~10 voltage-stabiliser tube, as long as the voltage stabilizing after single or series connection
The sum of value is between 150V~160V.What the resistance R10 ' of the present invention was shared by resistance R10 and one with other circuits
Resistance R11 is collectively formed.
In the present embodiment, the voltage stabilizing value of voltage-stabiliser tube ZD5 ' takes 150V (can be gone here and there in actual track by 2 voltage-stabiliser tubes ZD5, ZD65
Join), when input direct voltage is less than 150Vdc, voltage-stabiliser tube ZD5 ' does not puncture, and control IC is without startup voltage, it is impossible to work
Make.When input direct voltage is more than 150Vdc, voltage-stabiliser tube ZD5 ' breakdown, resistance R2 charges to capacitance C16, as capacitance C16 two
After startup threshold voltage of the terminal voltage more than control IC, control IC starts, main circuit work.Circuit is designed as specified straight when inputting
During galvanic electricity pressure (200~230Vdc), resistance R2 is 15~25mA to the charging current of capacitance C16.In this way, even if in high temperature 225
In the case of DEG C, the leakage current of IC is controlled to reach 10mA, control IC can also start.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, it is noted that all
All any modification, equivalent and improvement made within the spirit and principles in the present invention etc. should be included in the guarantor of the present invention
Within the scope of shield.
Claims (9)
1. a kind of high temperature pulse power supply with DC over-voltage protection, which is characterized in that the power supply includes current rectifying and wave filtering circuit, hands over
Protection circuit, inversion unit, boosting unit and DC over-voltage protection circuit are flowed, the current rectifying and wave filtering circuit includes capacitance C9 and two
Pole pipe D7, the DC over-voltage protection circuit include voltage-stabiliser tube ZD1 ', resistance R16 and voltage-stabiliser tube ZD4, the voltage-stabiliser tube ZD1's '
By the anode of resistance R16 connection voltage-stabiliser tubes ZD4, the voltage-stabiliser tube ZD4's is negative for the negative pole end of cathode connecting diode D7, cathode
Pole connects power cathode.
A kind of 2. high temperature pulse power supply with DC over-voltage protection according to claim 1, which is characterized in that the friendship
Flowing protection circuit includes capacitance C20, resistance R14, diode D9, diode D8, resistance R15, resistance R18, capacitance C21, metal-oxide-semiconductor
Q2, resistance R17 ', resistance R19 and metal-oxide-semiconductor Q1, the capacitance C9 are connected in parallel on the both ends of power supply, the positive terminal of the diode D7
Connect positive pole, negative pole end connection inversion unit, positive terminal, the other end of one end connection diode D7 of the capacitance C20
By the cathode of resistance R14 connection diodes D9, the anode connection power cathode of the diode D9, the diode D8 is just
Pole is connected between capacitance C20 and resistance R14, negative pole end is sequentially connected in series resistance R15 and resistance R18 after connect power cathode, institute
The grid for stating metal-oxide-semiconductor Q2 is connected between resistance R15 and resistance R18, the grid of one end connection metal-oxide-semiconductor Q2 of the capacitance C21,
The other end connects power cathode, and the resistance R17 ' is connected in parallel on two outputs of current rectifying and wave filtering circuit again after connecting with resistance R19
Between end, the source electrode of the metal-oxide-semiconductor Q2 is connected to power cathode, drain electrode is connected between resistance R17 ' and resistance R19, described
The grid of metal-oxide-semiconductor Q1 is connected between resistance R17 ' and resistance R19, source electrode is connected to power cathode, drain electrode is connected to inversion list
Member, the grid of the metal-oxide-semiconductor Q2 are connected between the anode of resistance R16 and voltage-stabiliser tube ZD4.
3. a kind of high temperature pulse power supply with DC over-voltage protection according to claim 2, which is characterized in that described two
Pole pipe D7 is the reversed pressure-resistant diode more than 600V；The capacitance C20 is capacitance in 0.01uF~0.1uF, and pressure-resistant big
In the multi-layer ceramic capacitance of 600V；The capacitance C21 is multi-layer ceramic capacitance of the capacitance in 0.1uF~1uF；The resistance
R14 and resistance R15 is resistance value 10k Ω~100k Ω, and power is greater than or equal to the resistance of 1/4W.
A kind of 4. high temperature pulse power supply with DC over-voltage protection according to claim 2, which is characterized in that the electricity
Resistance R14 and resistance R15 is reduced to resistance a R14 ', the capacitance C20 and connects diode D9 and two respectively by resistance R14 '
Pole pipe D8.
A kind of 5. high temperature pulse power supply with DC over-voltage protection according to claim 4, which is characterized in that the electricity
Resistance R14 ' is resistance value 10k Ω~100k Ω, and power is greater than or equal to the resistance of 1/4W.
6. a kind of high temperature pulse power supply with DC over-voltage protection according to claim 1, which is characterized in that described steady
The voltage stabilizing value of pressure pipe ZD1 ' is 225V~230V, and voltage-stabiliser tube ZD1 ' is in series by 1~50 voltage-stabiliser tube.
7. a kind of high temperature pulse power supply with DC over-voltage protection according to claim 1, which is characterized in that described steady
The voltage stabilizing value of pressure pipe ZD4 is 10V~24V, and voltage-stabiliser tube ZD4 is in series by 1~30 voltage-stabiliser tube.
A kind of 8. high temperature pulse power supply with DC over-voltage protection according to claim 1, which is characterized in that the power supply
Direct current under-voltage protecting circuit is further included, the direct current under-voltage protecting circuit includes voltage-stabiliser tube ZD5 ', resistance R2, resistance R10 ' and electricity
Hold C16, the inversion unit includes control IC and metal-oxide-semiconductor Q3, and the boosting unit includes primary coil and secondary coil, described
The negative pole end of the cathode connecting diode D7 of voltage-stabiliser tube ZD5 ', the cathode of voltage-stabiliser tube ZD5 ' are sequentially connected in series resistance R2, resistance R10 '
The drain electrode of metal-oxide-semiconductor Q1 is followed by, the startup voltage end of the control IC is connected between resistance R2 and resistance R10 ', controls IC's
The grid of control terminal connection metal-oxide-semiconductor Q3, the cathode output end of the source electrode connection DC over-voltage protection circuit of the metal-oxide-semiconductor Q3, institute
State one end of the drain electrode connection primary coil of metal-oxide-semiconductor Q3, the negative pole end of the other end connection diode D7 of primary coil, the electricity
Hold the drain electrode for starting voltage end, other end connection metal-oxide-semiconductor Q1 of one end connection control IC of C16.
9. a kind of high temperature pulse power supply with DC over-voltage protection according to claim 8, which is characterized in that described steady
The voltage stabilizing value of pressure pipe ZD5 ' is 150V~160V, and voltage-stabiliser tube ZD5 ' is in series by 1~10 voltage-stabiliser tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711435647.7A CN108111047A (en) | 2017-12-26 | 2017-12-26 | High temperature pulse power supply with DC over-voltage protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711435647.7A CN108111047A (en) | 2017-12-26 | 2017-12-26 | High temperature pulse power supply with DC over-voltage protection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108111047A true CN108111047A (en) | 2018-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711435647.7A Withdrawn CN108111047A (en) | 2017-12-26 | 2017-12-26 | High temperature pulse power supply with DC over-voltage protection |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104143906A (en) * | 2014-07-28 | 2014-11-12 | 武汉中元通信股份有限公司 | Medium-power power source module for mobile wireless communication device |
| CN104242249A (en) * | 2014-09-17 | 2014-12-24 | 广州金升阳科技有限公司 | Protective circuit of switching power supply |
| CN105634263A (en) * | 2016-04-12 | 2016-06-01 | 上海斐讯数据通信技术有限公司 | Protection circuit self-adaptive to input voltage |
| CN205986102U (en) * | 2016-08-30 | 2017-02-22 | 广州小百合信息技术有限公司 | Protection circuit for power supply |
| CN207977904U (en) * | 2017-12-26 | 2018-10-16 | 成都鼎信致远科技有限公司 | The pulse power with self-protection |
-
2017
- 2017-12-26 CN CN201711435647.7A patent/CN108111047A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104143906A (en) * | 2014-07-28 | 2014-11-12 | 武汉中元通信股份有限公司 | Medium-power power source module for mobile wireless communication device |
| CN104242249A (en) * | 2014-09-17 | 2014-12-24 | 广州金升阳科技有限公司 | Protective circuit of switching power supply |
| CN105634263A (en) * | 2016-04-12 | 2016-06-01 | 上海斐讯数据通信技术有限公司 | Protection circuit self-adaptive to input voltage |
| CN205986102U (en) * | 2016-08-30 | 2017-02-22 | 广州小百合信息技术有限公司 | Protection circuit for power supply |
| CN207977904U (en) * | 2017-12-26 | 2018-10-16 | 成都鼎信致远科技有限公司 | The pulse power with self-protection |
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Application publication date: 20180601 |