CN108110091A - Application of the silica slightly soluble liquid in photovoltaic plating is brilliant - Google Patents
Application of the silica slightly soluble liquid in photovoltaic plating is brilliant Download PDFInfo
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- CN108110091A CN108110091A CN201810034331.5A CN201810034331A CN108110091A CN 108110091 A CN108110091 A CN 108110091A CN 201810034331 A CN201810034331 A CN 201810034331A CN 108110091 A CN108110091 A CN 108110091A
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- Prior art keywords
- silica
- slightly soluble
- soluble liquid
- brilliant
- photovoltaic
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 130
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 58
- 239000007788 liquid Substances 0.000 title claims abstract description 36
- 238000007747 plating Methods 0.000 title claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- 230000008020 evaporation Effects 0.000 claims abstract description 6
- 238000001704 evaporation Methods 0.000 claims abstract description 6
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 6
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 239000002904 solvent Substances 0.000 claims abstract description 3
- 229920000642 polymer Polymers 0.000 claims description 9
- 238000010276 construction Methods 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 241000790917 Dioxys <bee> Species 0.000 claims 2
- 229910003978 SiClx Inorganic materials 0.000 claims 2
- 238000001354 calcination Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 16
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000003628 erosive effect Effects 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 2
- 239000002351 wastewater Substances 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 description 6
- 239000000428 dust Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004005 microsphere Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229920001206 natural gum Polymers 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000009288 screen filtration Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 230000010148 water-pollination Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
- Chemically Coating (AREA)
Abstract
The present invention relates to photovoltaic plate surfaces to plate crystal technique, and in particular to application and corresponding preparation method of a kind of silica slightly soluble liquid in photovoltaic plating is brilliant.To solve problem of the prior art, the present invention provides a kind of silica slightly soluble liquid, and the plating that can directly apply to solar energy photovoltaic panel is brilliant.Silica slightly soluble liquid of the present invention, solute are the amorphous nano silicon dioxide of 10 100nm, and solvent is water.The silica slightly soluble liquid energy is enough painted on the photovoltaic plate surface cleaned up, after moisture evaporation, forms silica crystals plated film.The present invention is suitable for directly carrying out plated film to solar energy photovoltaic panel, short time limit, waste water of constructing is pollution-free, the crystal coating of formation makes glass surface become more smooth exquisiteness, the various erosions of nature can effectively be resisted, body surface is allowed to remain beautiful such as new state, reduces the cleaning to plated brilliant body surface and maintenance cost.
Description
Technical field
The present invention relates to photovoltaic plate surfaces to plate crystal technique, and in particular to a kind of silica slightly soluble liquid is in solar energy
Application and corresponding preparation method during photovoltaic plating is brilliant.
Background technology
It is the photovoltaic generation of the energy in global renewable energy utilization using renewable solar energy due to worldwide energy shortage
In proportion will be increasing.
Solar energy photovoltaic glass is a kind of special glassware utilized with conversion solar energy, is the pass of solar cell
One of key parts, effect are that battery component is protected to prevent from aoxidizing, enhance the shock resistance energy of component from the erosion of steam
Power, and using its high-transmission rate luminous energy is provided for cell piece.Due to glass-reflected and absorption, traditional solar components photovoltaic
Effective transmissivity of glass is 92% or so, about 8% visible light loss.In recent years, anti-reflection coated glass is developed both at home and abroad,
Antireflective film is plated on ultra-white photovoltaic glass surface, effective transmissivity 2% or so of sunlight can be increased.
Since solar photovoltaic assembly uses under open-air atmosphere, operating condition is quite severe, and photovoltaic glass will be subjected to sand
The influence of the natural environments such as dirt, it is mechanically damaged in cleaning, maintaining again, the sunlight of glass is caused effectively to transmit
Rate reduces, and photovoltaic generation receptivity is made to decline and influence generating efficiency.At present, realize that optics increases on silicon solar cell
There are many saturating antireflective coatings, such as titanium dioxide, silicon nitride, magnesium fluoride, tantalum pentoxide too can battery surface plating subtract
Behavior of Nanoporous Silica Films prepared by reflective film or chemical method.Wherein, Behavior of Nanoporous Silica Films is because can
It adjusts nanoaperture and obtains suitable refractive index, application range is wider.The hardness of silicon dioxide film, wearability, translucency all compared with
Good, still, construction is complicated, and the application colloidal sol of configuration cannot be at once using can not place too long, it is necessary to display certain time,
The plated film that performance meets can be obtained.Meanwhile the plated film of formation removes and contains silica composition, it is right also containing glue or other compositions
Plating film strength, translucency and service life have certain influence.Also, existing coating technique is relatively severe because of preparation condition
It carves, therefore is substantially the coating technique for glass product, i.e., what photovoltaic panel used is directly coated glass, and cannot be used
Common non-coated glass carries out plated film to photovoltaic panel.
The content of the invention
To solve problem of the prior art, the present invention provides a kind of silica slightly soluble liquid, can directly apply to too
The plating of positive energy photovoltaic panel is brilliant.
Silica slightly soluble liquid of the present invention, solute are the amorphous nano silicon dioxide of 10-100nm, and solvent is
Water.The silica slightly soluble liquid energy is enough painted on the photovoltaic plate surface cleaned up, after moisture evaporation, shape
Into silica crystals plated film.
Further, the concentration of the silica slightly soluble liquid is plated so as to forming thickness for the crystal of 20-60nm thickness
Subject to film.
Silica slightly soluble liquid is implemented in accordance with the following steps for the brilliant method of photovoltaic plating：
1）The solar energy photovoltaic panel for needing to plate crystalline substance is cleaned, surface blot processing is clean；
2）According to construction solar energy photovoltaic panel area reckoning silica slightly soluble liquid usage amount, titanium dioxide is configured by solution requirement
Silicon slightly soluble liquid；
3）Solar energy photovoltaic panel is horizontal positioned, and silica slightly soluble liquid is uniformly sprayed at solar energy photovoltaic panel using spraying equipment
Surface makes solution in photovoltaic plate surface nature levelling；
4）Evaporation water gets the brilliant solar energy photovoltaic panel of plating.
Heretofore described silica slightly soluble liquid, can be prepared according to the method for the prior art.It is contemplated that
It is more complicated to existing silica slightly soluble liquid and preparation method thereof, it is prepared in situ relatively high to equipment requirement, is not suitable for big
The photovoltaic panel plating of scale is brilliant.Therefore, the present invention provides a kind of preparation scheme of silicon dioxide carried microballoon, by the titanium dioxide
Silicon load microballoon is placed in container, is passed through water and is cycled, can obtain silica slightly soluble liquid.Water-flowing amount is according to needed for plating crystalline substance
Amount of solution determine that water circulation time then determines according to coating film thickness and water.
The preparation method of the silicon dioxide carried microballoon is：Nano silicon dioxide is changed using polymer Graft Method
Property, silicon dioxide molecules content is obtained as the micro- polymers of silica of 5-30, and the micro- polymers of the silica is loaded into tool
Have on the carrier of microcellular structure, calcine, obtain load microballoon.
Compared with prior art, beneficial effects of the present invention are：
1st, the method according to the invention, the silica crystals plated film of formation is pure silicon dioxide crystal film.It can improve common
Glass microscopic surface roughness can largely reflect sunlight, and oblique fire sunlight when being particularly sunrise sunset is difficult to the present situation being utilized.Two
Silica slightly soluble liquid is a kind of functional group water solution, and main component is nanometer grade silica.After photovoltaic panel surface spraying,
The coating of permanent inorganic nanostructured can be quickly formed without Overheating Treatment.
2nd, by promoting light transmittance, hydrophily and the decomposing organic matter ability of photovoltaic component glass, photovoltaic module hair is increased
Electricity 3~10%.After nanoscale crystal plated film, nanoscale crystal surface is smooth as lens, and oblique fire light transmittance is significantly increased.
And nanoscale crystal film thickness only 20~60nm, light transmittance will not be reduced because of refraction.It is singly that nanoscale crystal plated film increases
Light transmittance, with regard to generated energy can be increased：Sooner or later more than 25%, noon more than 5%.
3rd, according to actual test, August short of rain, a large amount of dust settle panel surface, so August panel is dirtier.Therefore survey
During examination, for August compared with during rainy season in June, plated film can increase more generated energy.Test record, between only 1 day, compared with non-plated film,
It can increase generated energy after nanoscale crystal plated film：June about 5%~6%, August about 7%~9%.
4th, simple glass can reflect 12% sunlight, and light transmittance only has 88%.Reflective, raising light transmission can be prevented after plating is brilliant
Rate.Light transmittance after surface of ordinary glass application is increased to 93%.
5th, the silicon dioxide molecules of dissolving can be attached to construction object surface, form three-layer protection：First layer can be firm
Admittedly be adsorbed onto construction subject surface；Intermediate one layer of glass shield that can form one layer of glass material, outermost one layer of adsorption moisture, shape
Into protection mantle；Conventional coating from using chemicals is different, and the present invention is useless after construction simply with water and natural mineral matter
Water can be exhausted directly.
6th, the solute in silica slightly soluble liquid is the molecule of inanimate matter nano-scale, in solution spraying to photovoltaic plate surface
Afterwards, one layer of plated film will be formed as " drawing over to one's side " surface molecular.Since by nano molecular institute " drawing over to one's side ", body surface becomes
More smooth exquisiteness, can effectively resist the various erosions of nature, such as ultraviolet irradiation, the acid-base material contact in air,
The attachment of various dust, birds droppings, natural gum, iron powder allows body surface to remain beautiful such as new state, reduces to plated brilliant object
The cleaning in body surface face and maintenance cost.
7th, the tradition plating brilliant construction time for usually requiring 2 ~ 3 days, the method according to the invention, it is only necessary to which several hours are with regard to energy
It is brilliant to complete plating.
8th, the term of validity of silica crystals plated film is 2 years or more, is 3-5 times of traditional plated film.
Specific embodiment
The following examples can make those skilled in the art that the present invention be more fully understood, but not limit in any way
The present invention.
Embodiment 1
Prepare silicon dioxide carried microballoon, as follows for：
1）Nano silicon dioxide is prepared using chemical deposition；
2）Nano silicon dioxide is modified using polymer Graft Method, obtains two that silicon dioxide molecules content is 5-30
The micro- polymers of silica；
3）The micro- polymers of the silica is loaded on the carrier with microcellular structure, is calcined, obtains load microballoon.
Embodiment 2
Silica slightly soluble liquid production equipment, including silicon dioxide carried microballoon container, water torus, water circulating pump, filter screen,
Flowmeter, the container described in the water circulating pump have inlet and outlet, and filter screen is arranged on the water filling port of equipment, from
The water that water filling port is passed through, into water torus, starts water circulating pump, the water of water torus is through inflow-rate of water turbine after filter screen filtration
Table into container, after silicon dioxide carried micro-sphere contacts, returns to water torus, until the concentration of solution reaches requirement.It follows
The ring time determines according to required solution concentration.
The quantity of the water torus is 1-3.
Embodiment 3
Silica slightly soluble liquid is implemented in accordance with the following steps for the brilliant method of photovoltaic plating：
1）The solar energy photovoltaic panel for needing to plate crystalline substance is cleaned, surface blot processing is clean；
2）According to construction solar energy photovoltaic panel area reckoning silica slightly soluble liquid usage amount, by solution requirement and coating film thickness
It determines to prepare silica slightly soluble liquid；
3）Solar energy photovoltaic panel is horizontal positioned, and silica slightly soluble liquid is uniformly sprayed at solar energy photovoltaic panel using spraying equipment
Surface makes solution in photovoltaic plate surface nature levelling；
4）Evaporation water gets the brilliant solar energy photovoltaic panel of plating.
It will be understood by those skilled in the art that above example is only exemplary embodiment, in the spirit without departing substantially from the present invention
In the case of scope, a variety of variations can be carried out, replaces and changes.
Claims (4)
1. application of the silica slightly soluble liquid in photovoltaic plating is brilliant, it is characterised in that：The silica slightly soluble liquid of use
Parameter be：Solvent is water, and solute is the amorphous silica of 10-100nm；The silica is used to be sprayed on for solution
Photovoltaic plate surface through over cleaning after moisture evaporation, forms crystal coating.
2. application of the silica slightly soluble liquid according to claim 1 in photovoltaic plating is brilliant, it is characterised in that：Institute
The concentration of silica slightly soluble liquid is stated so as to being formed subject to the crystal coating that thickness is 20-60nm thickness.
3. application of the silica slightly soluble liquid according to claim 1 in photovoltaic plating is brilliant, which is characterized in that press
Implement according to following steps：
1）The solar energy photovoltaic panel for needing to plate crystalline substance is cleaned, surface blot processing is clean；
2）According to construction solar energy photovoltaic panel area reckoning silica slightly soluble liquid usage amount, titanium dioxide is configured by solution requirement
Silicon slightly soluble liquid；
3）Solar energy photovoltaic panel is horizontal positioned, and silica slightly soluble liquid is uniformly sprayed at solar energy photovoltaic panel using spraying equipment
Surface makes solution in photovoltaic plate surface nature levelling；
4）Evaporation water gets the brilliant solar energy photovoltaic panel of plating.
4. application of the silica slightly soluble liquid according to claim 1 in photovoltaic plating is brilliant, which is characterized in that institute
The preparation method for stating silica slightly soluble liquid is：Nano silicon dioxide is modified using polymer Graft Method, obtains dioxy
SiClx molecule content is the micro- polymers of silica of 5-30, and the micro- polymers of the silica is loaded to microcellular structure
On carrier, calcining obtains load microballoon, and the load microballoon is placed in container, water is passed through and is cycled, can obtain dioxy
SiClx slightly soluble liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810034331.5A CN108110091B (en) | 2018-01-15 | 2018-01-15 | Application of silicon dioxide micro-solution in solar photovoltaic crystal plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810034331.5A CN108110091B (en) | 2018-01-15 | 2018-01-15 | Application of silicon dioxide micro-solution in solar photovoltaic crystal plating |
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| Publication Number | Publication Date |
|---|---|
| CN108110091A true CN108110091A (en) | 2018-06-01 |
| CN108110091B CN108110091B (en) | 2020-04-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810034331.5A Active CN108110091B (en) | 2018-01-15 | 2018-01-15 | Application of silicon dioxide micro-solution in solar photovoltaic crystal plating |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102432191A (en) * | 2011-08-23 | 2012-05-02 | 陕西科技大学 | Method for preparing dual-dimension SiO2 photonic crystals |
| CN102617045A (en) * | 2012-04-01 | 2012-08-01 | 中国科学院宁波材料技术与工程研究所 | SiO2 antireflection thin film and preparation method thereof |
| CN103936292A (en) * | 2014-04-21 | 2014-07-23 | 镇江市晶利玻璃有限公司 | High transmittance film coating liquid used for preparing solar photovoltaic glass and preparation method of film coating liquid |
| JP2015033854A (en) * | 2005-06-21 | 2015-02-19 | 日本板硝子株式会社 | Transparent article and method for producing the same |
| CN107986636A (en) * | 2017-12-06 | 2018-05-04 | 四川双绿科技有限公司 | A kind of production method of photovoltaic module self-cleaning film |
| CN109399648A (en) * | 2018-11-10 | 2019-03-01 | 天津大学 | Micron size porous silica microballoon and preparation method thereof |
-
2018
- 2018-01-15 CN CN201810034331.5A patent/CN108110091B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015033854A (en) * | 2005-06-21 | 2015-02-19 | 日本板硝子株式会社 | Transparent article and method for producing the same |
| CN102432191A (en) * | 2011-08-23 | 2012-05-02 | 陕西科技大学 | Method for preparing dual-dimension SiO2 photonic crystals |
| CN102617045A (en) * | 2012-04-01 | 2012-08-01 | 中国科学院宁波材料技术与工程研究所 | SiO2 antireflection thin film and preparation method thereof |
| CN103936292A (en) * | 2014-04-21 | 2014-07-23 | 镇江市晶利玻璃有限公司 | High transmittance film coating liquid used for preparing solar photovoltaic glass and preparation method of film coating liquid |
| CN107986636A (en) * | 2017-12-06 | 2018-05-04 | 四川双绿科技有限公司 | A kind of production method of photovoltaic module self-cleaning film |
| CN109399648A (en) * | 2018-11-10 | 2019-03-01 | 天津大学 | Micron size porous silica microballoon and preparation method thereof |
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| CN108110091B (en) | 2020-04-10 |
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