CN108110021A - A kind of photoelectric diode structure for improving cmos image sensor quantum efficiency - Google Patents
A kind of photoelectric diode structure for improving cmos image sensor quantum efficiency Download PDFInfo
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- CN108110021A CN108110021A CN201711123464.1A CN201711123464A CN108110021A CN 108110021 A CN108110021 A CN 108110021A CN 201711123464 A CN201711123464 A CN 201711123464A CN 108110021 A CN108110021 A CN 108110021A
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- 239000000758 substrate Substances 0.000 claims abstract description 64
- 230000005540 biological transmission Effects 0.000 claims abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- -1 Cyclic n nitroso compound Chemical class 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 230000005622 photoelectricity Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
Abstract
The invention discloses a kind of photoelectric diode structure for improving cmos image sensor quantum efficiency, positioned at being lightly doped in substrate, including reset transistor, transmission transistor, PN photodiodes, pixel unit isolated area, p-well region and annular silicon area；The both ends of the transmission transistor connect the reset transistor and PN photodiodes respectively, the region that the reset transistor, transmission transistor and PN photodiodes are formed is surrounded by cricoid pixel unit isolated area, annular silicon area is set in the lower section of the p-well region and pixel unit isolated area, the inner ring area of the ring-type silicon area is more than the PN photodiode areas, annular silicon area and pixel unit isolated area is not overlapped and the two doping type is opposite.The present invention, to increase width of depletion region, can improve the quantum efficiency of long-wave band by the reverse biased for the NP parts for increasing positive-negative-positive, and can avoid introducing the electric leakage of interband tunnelling.
Description
Technical field
The present invention relates to semiconductor applications, and in particular to a kind of two pole of photoelectricity for improving cmos image sensor quantum efficiency
Pipe structure.
Background technology
Cmos image sensor is a kind of electrooptical device, and incident photon arrives the electron excitation in semiconductor valence band
Conduction band, and be stored in reversed PN junction, then be transferred to by a transmission mos transistor on capacitance.
The drain electrode of PN junction reverse bias, i.e. reset transistor connects high potential, and transmission transistor drain electrode suspends, reset transistor grid
High pressure opening is put in pole, and transfer transistor gate puts high pressure opening, at this time the charge in the N areas of the PN junction in clamper photodiode
(electronics) is extracted, and the PN junction in clamper photodiode is placed in the reverse-biased current potential of setting；Reset transistor grid sets low pressure
It closes, transfer transistor gate sets low pressure and closes, by the illumination of certain time, after PN junction is filled with a certain amount of electronics, PN junction
Reverse-biased current potential can reduce, the potential amplitude of reduction is directlyed proportional to intensity of illumination to light application time；Transfer transistor gate puts height
Pressure is opened, and after the electronics stored in PN junction flows to the drain electrode of transmission transistor, is reduced the current potential that transmission transistor drains, is reduced
Amplitude and photodiode in the amount of charge that stores and photodiode and transmission transistor drain electrode capacitance ratio into just
Than.It is the intensity of illumination understood in the pixel unit to read transmission transistor drain electrode variation of current potential before and after charge transmission.It sweeps
Retouch entire pel array, it is possible to obtain inciding into the image information of the intensity of illumination, i.e. object on pel array surface.
In the cmos image sensor course of work, before exposing each time, it is required for carrying out the weight of PN photodiodes
It puts, attached drawing 1 is the structure diagram of cmos image sensor of the prior art, is lightly doped positioned at p-type in substrate 5, including weight
Put transistor, transmission transistor, PN photodiodes and p-type pixel unit isolated area, reset transistor, the grid of transmission transistor
Pole and gate oxide are located at the upper surface that substrate is lightly doped in p-type, and reset transistor, the source electrode of transmission transistor and drain electrode are located at P
Type is lightly doped in substrate 5, and p type island region domain 11 is located at the surface in N-type region domain 4 in PN photodiodes, and N-type region domain 4 is transmission
The source electrode of transistor, across the p type island region domain 11 of PN photodiodes, transmission crystalline substance between the source electrode 7 of transmission transistor and its grid 9
The drain electrode 7 of body pipe and the source electrode 7 of reset transistor overlap, and 7 one side of drain electrode of reset transistor isolates 1 for shallow trench, reset brilliant
The region that body pipe, transmission transistor and PN photodiodes are formed is surrounded by cricoid p-type pixel unit isolated area 6, and annular
P-type pixel unit isolated area 6 in close to the part of reset transistor for shallow trench isolate 1, shallow trench isolation 1 opposite side be
P-type bonding pad 8, i.e. shallow trench isolate and p-type pixel unit isolated area 6 is collectively formed a circular reset transistor, passes
The region of defeated transistor and PN photodiodes.By taking attached cmos image sensor shown in FIG. 1 as an example, the time sequential routine of replacement is
Such, the reset transistor on the left side is opened, and after the suspending drain 7 of transmission transistor to high potential, transmission transistor is opened, PN
Electronics in photodiode is just pumped, and PN photodiode potential rise higher positions are reset.The reset transistor and biography on the left side
Defeated transistor is all turned off, and the suspending drain 7 of transmission transistor is also in high potential.PN photodiodes are through illumination after a while
Afterwards, some electronics are stored.Transmission transistor is opened at this time, and electronics is after PN photodiodes are transferred to suspending drain 7, PN light
The current potential rise of electric diode, the current potential of suspending drain 7 decline；The potential change of suspending drain 7 and the capacitance two of suspending drain 7
Person's product is exactly the amount of charge shifted.
In the cmos image sensor of common 3.3V PN junction photodiode after a reset, the ceiling voltage of N-type silicon area
In 1.8V or so, at this moment its width of depletion region is in 2.1 microns.For 700 nanometers of feux rouges, width of depletion region will reach 3
Micron can just make quantum efficiency be more than 50%.
The quantum efficiency of long-wave band is improved, it is necessary to increase width of depletion region.Thinking that there are two types of increase width of depletion region, the
One can increase voltage, but after increasing voltage, can introduce interband tunnelling (BTBT) electric leakage, dark current is caused to increase.Second can
To increase PN junction N areas depth, but after increasing PN junction N areas depth, the residual electron after resetting can be increased, so as to cause half-light
It is poor to respond effect.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of photoelectricity two for improving cmos image sensor quantum efficiency
Pole pipe structure, the reverse biased of the NP parts by increasing positive-negative-positive, to increase width of depletion region, so as to improve the amount of long-wave band
Sub- efficiency；And it can avoid when substrate adds back bias voltage, the first half of PN photodiodes introduces interband due to electric field increases
Tunnelling is leaked electricity.
To achieve these goals, the present invention adopts the following technical scheme that：A kind of raising cmos image sensor quantum effect
The photoelectric diode structure of rate, positioned at being lightly doped in substrate, including reset transistor, transmission transistor, PN photodiodes, as
Plain cell isolation area, p-well region and annular silicon area；The both ends of the transmission transistor connect the reset transistor and PN light respectively
Electric diode, the p-well region are the p-well of the reset transistor；Two pole of the reset transistor, transmission transistor and PN photoelectricity
The region that pipe is formed is surrounded by cricoid pixel unit isolated area, close to the reset transistor in the pixel unit isolated area
Part be shallow trench isolation, in the lower section of the p-well region and pixel unit isolated area, annular silicon area is set, wherein, annular silicon
The inner ring area in area is more than the PN photodiode areas, and annular silicon area and pixel unit isolated area are not overlapped and the two is adulterated
Type is opposite.
Further, substrate being lightly doped, substrate is lightly doped for p-type, pixel unit isolated area is p-type pixel unit isolated area,
Annular silicon area is cyclic n nitroso compound type silicon area, and p type island region domain is located at the surface in N-type region domain in the PN photodiodes.
Further, the doping concentration in the p-type pixel unit isolated area and p-well region is lightly doped more than p-type in substrate
Doping concentration.
Further, the drain electrode one side of the reset transistor isolates for shallow trench, the opposite side of the shallow trench isolation
For p-type bonding pad, the p-type bonding pad is p-type heavily doped region.
Further, the doping concentration in the p-type bonding pad is more than the doping concentration that p-type is lightly doped in substrate.
Further, zero-bias or back bias voltage, the p-type bonding pad, p-type pixel unit are added when substrate is lightly doped in p-type
When p type island region domain connects zero potential in isolated area, p-well region and PN photodiodes, the cyclic n nitroso compound type silicon area and p-type bonding pad, p-type
Pixel unit isolated area, p-well region, p-type, which are lightly doped between substrate, forms depletion region I, in the PN photodiodes N-type region domain with
Formation depletion region II, II weight of the depletion region I and depletion region between substrate, p-type pixel unit isolated area is lightly doped in p-well region, p-type
It is folded.
Further, in the photodiode N-type region domain be the transmission transistor source electrode, and the transmission crystal
Across the p type island region domain of PN photodiodes, the drain electrode of the transmission transistor and the replacement between the source electrode of pipe and its grid
The source electrode of transistor overlaps.
Further, the reset transistor drain electrode is N-type heavily doped region, and the reset transistor source electrode is N-type weight
Doped region.
Further, the doping concentration scope of the cyclic n nitroso compound type silicon area is 1e15/cm3-1e18/cm3。
Beneficial effects of the present invention are：Be lightly doped in p-type in substrate and add cyclic n nitroso compound type silicon area, cyclic n nitroso compound type silicon area it is interior
Ring overlaps in the vertical direction with the PN photodiodes, and inner ring area is more than PN photodiode areas；Pass through increase
The reverse biased of the NP parts of positive-negative-positive, to increase width of depletion region, so as to improve the quantum efficiency of long-wave band.Cyclic n nitroso compound type simultaneously
The depletion region I and depletion region II that N-type region domain in silicon area and PN photodiodes is formed with surrounding p type island region domain can be in P
When type is lightly doped substrate and adds back bias voltage, isolate the electric field for being lightly doped to come at substrate from p-type, make the p-type in PN photodiodes
Region, p-well region and p-type pixel unit isolated area are still maintained at zero potential, so that the first half voltage of PN photodiodes
It remains unchanged, avoids when substrate adds back bias voltage, the first half of PN photodiodes introduces the leakage of interband tunnelling due to electric field increases
Electricity.
Description of the drawings
Fig. 1 is the structure diagram of PN photodiodes in cmos image sensor in the prior art.
Fig. 2 be the present invention in it is a kind of improve cmos image sensor quantum efficiency photoelectric diode structure sectional view and
PN diode depletion regions schematic diagram during substrate zero-bias.
Fig. 3 be the present invention in it is a kind of improve cmos image sensor quantum efficiency photoelectric diode structure sectional view and
PN diode depletion regions schematic diagram during substrate DC bias.
When Fig. 4 is lightly doped substrate and adds back bias voltage for p-type of the present invention, PN photodiode depletion regions schematic diagram.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in further detail.
A kind of photoelectric diode structure for improving cmos image sensor quantum efficiency provided by the invention, positioned at being lightly doped
In substrate, including reset transistor, transmission transistor, PN photodiodes, pixel unit isolated area and annular silicon area；Transmission is brilliant
The both ends of body pipe connect reset transistor and PN photodiodes, two pole of reset transistor, transmission transistor and PN photoelectricity respectively
The region that pipe is formed is surrounded by cricoid pixel unit isolated area, close to reset transistor in cricoid pixel unit isolated area
Part isolates for shallow trench, annular silicon area is set in the lower section of well region and pixel unit isolated area, the inner ring of annular silicon area is perpendicular
Nogata overlaps upwards with PN photodiodes, and inner ring area is more than PN photodiode areas, annular silicon area and pixel unit
Isolated area is not overlapped and the two doping type is opposite.It should be noted that substrate is lightly doped in the present invention to be lightly doped for p-type
Substrate is lightly doped in substrate and N shapes, all in pixel unit isolated area, annular silicon area and the present invention to mix when substrate difference
The inversion of miscellany type comes, in order to enable protection scope of the present invention understands, in embodiment by taking substrate is lightly doped in p-type as an example, works as lining
Bottom for N-type substrate is lightly doped when, it is only necessary to by cmos image sensor in the present invention other devices doping type change be
It can.
A kind of photoelectric diode structure for improving cmos image sensor quantum efficiency provided by the invention, serves as a contrast when being lightly doped
Substrate is lightly doped for p-type in bottom, and pixel unit isolated area is p-type pixel unit isolated area, and annular silicon area is cyclic n nitroso compound type silicon area, PN
P type island region domain is located at the surface in N-type region domain in photodiode, and well region is p-well region.Transmission transistor is located at PN light in the present invention
Above the side of electric diode, reset transistor, the grid of transmission transistor and gate oxide are located at the upper table that substrate is lightly doped in p-type
Face, reset transistor, the source electrode of transmission transistor and drain electrode are lightly doped positioned at p-type in substrate, p type island region domain in PN photodiodes
Positioned at the surface in N-type region domain, and the source electrode that N-type region domain is transmission transistor, between the source electrode of transmission transistor and its grid
Across the p type island region domain of PN photodiodes, the drain electrode of transmission transistor and the source electrode of reset transistor overlap, reset transistor
One side drain as shallow trench isolation.Wherein, the drain electrode of reset transistor and source electrode are N-type heavily doped region.
As shown in attached drawing 2 or 3, in the present invention, reset transistor and transmission transistor include substrate 5 is lightly doped positioned at N-type
Upper gate 9 and grid oxic horizon 10, the reset transistor further include source electrode 7 and drain electrode 7, the drain electrode of transmission transistor and again
The source electrode for putting transistor overlaps, and the source electrode of transmission transistor is the N-type region domain 4 of PN photodiodes, and with its grid across one
The p type island region domain 11 of layer PN photodiodes.The area that reset transistor, transmission transistor and PN photodiodes are formed in the present invention
Domain is surrounded by cricoid p-type pixel unit isolated area 6, and close to reset transistor in cricoid p-type pixel unit isolated area 6
Part isolates 1 for shallow trench, and the opposite side of shallow trench isolation 1 is p-type bonding pad 8, i.e. shallow trench isolation and p-type pixel unit
The region of a circular reset transistor, transmission transistor and PN photodiodes is collectively formed in isolated area 6.It is gently mixed in p-type
The lower section of miscellaneous substrate sets cyclic n nitroso compound type silicon area 2, the inner ring of the cyclic n nitroso compound type silicon area 2 in the vertical direction with PN photodiodes
It overlaps, and inner ring area is more than PN photodiode areas, cyclic n nitroso compound type silicon area and P pixel units isolated area do not weigh spatially
It is folded.Below reset transistor and transmission transistor, and between p-type pixel unit isolated area and PN photodiodes
P-type is lightly doped substrate and forms p-well region 3, and p type island region domain 11 is clamped down on injection mode using current potential and formed in PN photodiodes, and PN
Doping concentration is more than the doping concentration that p-type is lightly doped in substrate 5 in p type island region domain 11 in photodiode.With PN light in the present invention
In electric diode centered on N-type region domain 4, the effect of p type island region domain 11 of top is to reduce dark current, and substrate 2 is lightly doped in the p-type of lower section
Increase the width of depletion region, i.e., depletion region is extended into silicon body, and left side p-well region 3 determines the electrical parameter of transmission transistor, right
Side p-type pixel unit isolation II 12 provides the isolation between pixel, wherein, mixing in p-type pixel unit isolated area 6 and p-well region 3
Miscellaneous concentration is more than the doping concentration that p-type is lightly doped in substrate 5.
As shown in Figure 2, dotted line is depletion region in figure, a kind of light for improving cmos image sensor quantum efficiency of the invention
Electric diode structure, when substrate plus zero-bias, wherein, p type island region domain 11 in p-type bonding pad 8, p-well region 3, PN photodiodes
Zero potential is connect with p-type pixel unit isolated area 6；Substrate 5, p-type pixel is lightly doped with p-well region 3, p-type in cyclic n nitroso compound type silicon area 2 at this time
Depletion region I is formed between cell isolation area 6 and p-type bonding pad 8, N-type region domain 4 is gently mixed with p-well region 3, p-type in PN photodiodes
Depletion region II is formed between miscellaneous substrate 5, p-type pixel unit isolated area 6, depletion region I and depletion region II are overlapped.That is, ring
The opposite high potential that shape N-type silicon area is formed with N-type region domain in PN photodiodes can block p-well region and p-type that substrate is lightly doped
Connection and p-type pixel unit isolated area and p-type connection between substrate is lightly doped so that p-type is lightly doped substrate and adds negative bias
Pressure, at the same in p-type bonding pad, p-well region, p-type pixel unit isolated area, PN photodiodes p type island region domain add zero-bias become can
Energy.
As shown in Figure 3, dotted line is depletion region in figure, a kind of light for improving cmos image sensor quantum efficiency of the invention
Electric diode structure, when substrate plus back bias voltage, the scope of back bias voltage is 0 to -3V, p-type bonding pad 8, p-well region 3, p-type pixel
P type island region domain 11 plus zero-bias in cell isolation area 6 and PN photodiodes, at this point, due to p-type pixel unit isolated area and p-well
Doping concentration in area is more than the doping concentration that p-type is lightly doped in substrate, and depletion region I is close to p-type bonding pad 8, p-well region 3, p-type
The edge of 6 one side of pixel unit isolated area does not increase substantially, and the one side edge that substrate 5 is lightly doped close to p-type for depletion region I increases,
Therefore the width at I edge of depletion region is added；Depletion region II is close to 6 one side of p-well region 3 and p-type pixel unit isolated area simultaneously
Edge does not increase substantially, and the one side edge that substrate 5 is lightly doped close to p-type for depletion region II increases, so as to add two pole of PN photoelectricity
The width of depletion region in p type island region domain in pipe, i.e. its depth in a silicon substrate, improve quantum efficiency.Consumption after width increase
Area I and depletion region II can isolate the electric field for being lightly doped to come at substrate from p-type when p-type is lightly doped substrate and adds back bias voltage to the greatest extent,
The p type island region domain in PN photodiodes, p-well region and p-type pixel unit isolated area is made still to be maintained at zero potential, so that PN light
The first half voltage of electric diode remains unchanged, and avoids when substrate adds back bias voltage, the first half of PN photodiodes is because of electric field
Increase and introduce the electric leakage of interband tunnelling.
Concrete principle as shown in Figure 4, looks up from vertical, p type island region domain in PN photodiodes, N-type region domain and its under
The P+/N/P- diodes that substrate formation is lightly doped in the p-type of side are considered as the back-to-back PN diodes of P+/N1/N2/P- two.
After adding cyclic n nitroso compound type silicon area, if after resetting, N areas maximum potential is 1.5V, then N1/N2 intersections are 1.5V, use this
While invention can make the P+/N1 be maintained at negative 1.5V so that P- adds negative 3V, then N2/P- is biased to negative 4.5V, so as to
Toward about one times of the Directional Extension width of depletion region of P-, that is, substrate.Therefore the width at PN photodiode depletion regions edge is added,
Quantum efficiency is improved, while the crosstalk between pixel unit can be reduced.
In order to reach p type island region in isolated p bonding pad 8, p-well region 3, p-type pixel unit isolated area 6, PN photodiodes
The connection between substrate 5 is lightly doped in domain 11 and p-type, and the lower limit that cyclic n nitroso compound type silicon area 2 adulterates is that substrate is lightly doped in p-type to add negative bias
It cannot be depleted during pressure, the meeting of p type island region domain and p-type in p-well region, p-type pixel unit isolated area and PN photodiodes if exhausting
Substrate is lightly doped to connect, has back bias voltage so as to cause p-well region, p-type pixel unit isolated area and PN photodiodes, leads
Gate oxide and the electric field between N-type region domain in PN photodiodes in transmission transistor is caused to increase, so as to cause dark current
Increase.The doping concentration that annular N-type silicon area is kept in the present invention is 1e15/cm3-1e18/cm3, cyclic n nitroso compound type silicon area and p-well region, P
The breakdown voltage that type is lightly doped between substrate and p-type pixel unit isolated area is higher than 20V.
The foregoing is merely the preferred embodiment of the present invention, the embodiment is not intended to limit the patent protection of the present invention
Scope, therefore the equivalent structure variation that every specification and accompanying drawing content with the present invention is made, similarly should be included in this
In the protection domain of invention appended claims.
Claims (9)
1. a kind of photoelectric diode structure for improving cmos image sensor quantum efficiency, positioned at being lightly doped in substrate, feature
It is, including reset transistor, transmission transistor, PN photodiodes, pixel unit isolated area, well region and annular silicon area；Institute
The both ends for stating transmission transistor connect the reset transistor and PN photodiodes respectively, and the well region is the replacement crystal
The trap of pipe；The region that the reset transistor, transmission transistor and PN photodiodes are formed is isolated by cricoid pixel unit
Area surrounds, and isolates close to the part of the reset transistor for shallow trench in the pixel unit isolated area, the well region with
The lower section of pixel unit isolated area sets annular silicon area, wherein, the inner ring area of annular silicon area is more than the PN photodiodes
Area, annular silicon area and pixel unit isolated area are not overlapped and the two doping type is opposite.
2. a kind of photoelectric diode structure for improving cmos image sensor quantum efficiency according to claim 1, special
Sign is, substrate is lightly doped, substrate is lightly doped for p-type, pixel unit isolated area is p-type pixel unit isolated area, and annular silicon area is
Cyclic n nitroso compound type silicon area, p type island region domain is located at the surface in N-type region domain in the PN photodiodes, and the well region is p-well region.
3. a kind of photoelectric diode structure for improving cmos image sensor quantum efficiency according to claim 2, special
Sign is that the doping concentration in the p-type pixel unit isolated area and p-well region is more than the doping concentration that p-type is lightly doped in substrate.
4. a kind of photoelectric diode structure for improving cmos image sensor quantum efficiency according to claim 2, special
Sign is that the drain electrode one side of the reset transistor isolates for shallow trench, and the opposite side of the shallow trench isolation connects for p-type
Area.
5. a kind of photoelectric diode structure for improving cmos image sensor quantum efficiency according to claim 4, special
Sign is that the p-type bonding pad is p-type heavily doped region, and substrate is lightly doped more than p-type in the doping concentration in p-type bonding pad
In doping concentration.
6. a kind of photoelectric diode structure for improving cmos image sensor quantum efficiency according to claim 4, special
Sign is, adds zero-bias or back bias voltage, the p-type bonding pad, p-type pixel unit isolated area, p-well when substrate is lightly doped in p-type
When p type island region domain connects zero potential in area and PN photodiodes, the cyclic n nitroso compound type silicon area and p-type bonding pad, p-type pixel unit every
It is lightly doped from area, p-well region, p-type between substrate and forms depletion region I, N-type region domain and p-well region, p-type in the PN photodiodes
Formation depletion region II between substrate, p-type pixel unit isolated area is lightly doped, the depletion region I and depletion region II are overlapped.
7. a kind of photoelectric diode structure for improving cmos image sensor quantum efficiency according to claim 2, special
Sign is, N-type region domain is the source electrode of the transmission transistor in the photodiode, and the source electrode of the transmission transistor with
Across the p type island region domain of PN photodiodes, the drain electrode of the transmission transistor and the source of the reset transistor between its grid
Pole overlaps.
8. a kind of photoelectric diode structure for improving cmos image sensor quantum efficiency according to claim 7, special
Sign is that the reset transistor drain electrode is N-type heavily doped region, and the reset transistor source electrode is N-type heavily doped region.
9. a kind of photoelectric diode structure for improving cmos image sensor quantum efficiency according to claim 2, special
Sign is that the doping concentration scope of the cyclic n nitroso compound type silicon area is 1e15/cm3-1e18/cm3。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109860214A (en) * | 2018-12-28 | 2019-06-07 | 上海集成电路研发中心有限公司 | A kind of imaging sensor |
| CN114242826A (en) * | 2021-12-02 | 2022-03-25 | 武汉新芯集成电路制造有限公司 | Single photon avalanche diode and forming method thereof |
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| CN114242826A (en) * | 2021-12-02 | 2022-03-25 | 武汉新芯集成电路制造有限公司 | Single photon avalanche diode and forming method thereof |
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