CN108109932B - Method for detecting bonding force of wafer - Google Patents
Method for detecting bonding force of wafer Download PDFInfo
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- CN108109932B CN108109932B CN201711350729.1A CN201711350729A CN108109932B CN 108109932 B CN108109932 B CN 108109932B CN 201711350729 A CN201711350729 A CN 201711350729A CN 108109932 B CN108109932 B CN 108109932B
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- thermal wave
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 230000008569 process Effects 0.000 claims abstract description 10
- 238000001514 detection method Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000007689 inspection Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- -1 nitrogen ions Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 57
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009658 destructive testing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention relates to the technical field of semiconductors, in particular to a method for detecting wafer bonding force, which comprises the following steps: step S1, providing a first wafer with a bonding surface structure on the surface; step S2, bombarding the bonding surface structure of the first wafer by adopting a plasma process; step S3, collecting thermal waves emitted by the surface of the bombarded first wafer by using thermal wave collecting equipment; step S4, judging the bonding force of the first wafer according to the acquired thermal wave; the method can stably and effectively measure the bonding force of the wafer participating in bonding, cannot cause the scrapping of the measured wafer, and is low in cost.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for detecting wafer bonding force.
Background
Through-silicon vias are also slowly becoming increasingly important as the industry seeks to address the diversity of trenches and vias, including depth and shape, and device manufacturing challenges associated with wafer thinning processes. The vertical electrical connection is made entirely through a silicon wafer or bare chip, making the chip-to-chip interconnection scheme compatible with three-dimensional wafer-level packaging and three-dimensional integrated circuits. Through-silicon vias achieve size reduction in three dimensions and make the interconnection length between device elements much shorter, increasing signal speed and reducing parasitic power consumption.
This temporary bonding/debonding technique employs a carrier wafer to provide sufficient mechanical support, which is the most common processing method for thinner and ultra-thin wafers. When the device wafer is temporarily bonded to the carrier wafer, it is subjected to backside processing, including thinning, through-silicon via processing and metallization. After the back processing step is completed, the device wafer can be easily peeled from the carrier wafer and processed continuously until packaging.
However, it becomes important to have sufficient bonding force after wafer bonding. The existing bonding force measuring method is usually completed in a manual or semi-automatic mode, the measuring result has large correlation with operators, the measuring result is unstable, destructive testing is performed on a bonded wafer, the measured wafer cannot be used as a product, and the measuring cost is high.
Disclosure of Invention
In view of the above problems, the present invention provides a method for detecting wafer bonding force, wherein the method comprises:
step S1, providing a first wafer with a bonding surface structure on the surface;
step S2, bombarding the bonding surface structure of the first wafer by adopting a plasma process;
step S3, collecting thermal waves emitted by the surface of the bombarded first wafer by using thermal wave collecting equipment;
step S4, the bonding force of the first wafer is judged according to the acquired thermal wave condition.
In the detection method, in step S4, the bonding force of the first wafer is determined according to the acquired wavelength of the thermal wave;
and judging that the bonding force of the first wafer is smaller as the acquired wavelength of the thermal wave is longer.
In the detection method, the bonding surface structure is a silicon dioxide layer.
The detection method further includes:
step S5, bonding the first wafer with the bonding surface structure to a second wafer.
In the above detection method, the size of the second wafer is 200 to 240 mm.
In the above detection method, the size of the first wafer is 200 to 240 mm.
In the detection method, the plasma process adopts nitrogen ions for bombardment.
In the above detection method, the thermal wave collecting device is a thermal wave collecting meter.
Has the advantages that: the method for detecting the bonding force of the wafer can stably and effectively measure the bonding force of the wafer participating in bonding, cannot cause the scrapping of the measured wafer, and is low in cost.
Drawings
Fig. 1 is a flowchart illustrating steps of a method for detecting wafer bonding force according to an embodiment of the invention.
Detailed Description
The invention is further illustrated with reference to the following figures and examples.
In a preferred embodiment, as shown in fig. 1, a method for detecting wafer bonding force is provided, which may include:
step S1, providing a first wafer with a bonding surface structure on the surface;
step S2, bombarding the bonding surface structure of the first wafer by adopting a plasma process;
step S3, collecting thermal waves emitted by the surface of the bombarded first wafer by using thermal wave collecting equipment;
step S4, determining the bonding force of the first wafer according to the acquired thermal wave.
In the above technical solution, the first wafer may be a carrier wafer; the above-described inspection method may be applied to only the first wafer, but this is only a preferable case, and the case of applying the inspection method to a second wafer bonded to the first wafer should be considered to be included in the present invention.
In a preferred embodiment, step S4 is to determine the bonding force of the first wafer according to the collected wavelength of the thermal wave;
and judging that the bonding force of the first wafer is smaller as the wavelength of the collected thermal wave is longer.
In the above technical solution, it is only preferable that the bonding force of the first wafer is obtained by analyzing the wavelength of the thermal wave, and other basic properties of the thermal wave, such as the frequency or intensity of the thermal wave, are also considered to be included in the present invention.
In a preferred embodiment, the bonding surface structure may be a silicon dioxide layer.
In the technical scheme, a large number of silicon-oxygen bonds are opened after the silicon dioxide layer is bombarded by the plasma process, and the generated silicon atoms/ions or oxygen molecules/ions have different properties of thermal waves released by the bonding surface structure of the first wafer, so that the bonding force of the first wafer is obtained through analysis.
In a preferred embodiment, the method further comprises the following steps:
in step S5, a surface of the first wafer having the bonding surface structure is bonded to a second wafer.
In the above technical solution, the second wafer may be a device wafer.
In the above embodiment, the second wafer preferably has a size of 200-240 mm (mm), such as 205mm, or 210mm, or 215mm, or 220mm, or 225mm, or 230mm, or 235mm, or 240mm, or 245 mm.
In a preferred embodiment, the first wafer has a size of 200-240 mm, such as 205mm, 210mm, 215mm, 220mm, 225mm, 230mm, 235mm, 240mm, 245mm, etc.
In a preferred embodiment, the plasma process may be bombarded with nitrogen ions.
In a preferred embodiment, the thermal wave collecting device may be a thermal wave collecting meter, or may be other devices for collecting thermal waves, such as a handheld device.
In summary, the method for detecting wafer bonding force provided by the present invention includes: step S1, providing a first wafer with a bonding surface structure on the surface; step S2, bombarding the bonding surface structure of the first wafer by adopting a plasma process; step S3, collecting thermal waves emitted by the surface of the bombarded first wafer by using thermal wave collecting equipment; step S4, judging the bonding force of the first wafer according to the acquired thermal wave; the method can stably and effectively measure the bonding force of the wafer participating in bonding, cannot cause the scrapping of the measured wafer, and is low in cost.
While the specification concludes with claims defining exemplary embodiments of particular structures for practicing the invention, it is believed that other modifications will be made in the spirit of the invention. While the above invention sets forth presently preferred embodiments, these are not intended as limitations.
Various alterations and modifications will no doubt become apparent to those skilled in the art after having read the above description. Therefore, the appended claims should be construed to cover all such variations and modifications as fall within the true spirit and scope of the invention. Any and all equivalent ranges and contents within the scope of the claims should be considered to be within the intent and scope of the present invention.
Claims (8)
1. A method for detecting wafer bonding force is characterized by comprising the following steps:
step S1, providing a first wafer with a bonding surface structure on the surface;
step S2, bombarding the bonding surface structure of the first wafer by adopting a plasma process;
step S3, collecting thermal waves emitted by the surface of the bombarded first wafer by using thermal wave collecting equipment;
step S4, the bonding force of the first wafer is judged according to the acquired thermal wave condition.
2. The method according to claim 1, wherein the step S4 is specifically to determine the bonding force of the first wafer according to the collected wavelength of the thermal wave;
and judging that the bonding force of the first wafer is smaller as the acquired wavelength of the thermal wave is longer.
3. The method of claim 1, wherein the bond surface structure is a silicon dioxide layer.
4. The detection method according to claim 1, further comprising:
step S5, bonding the first wafer with the bonding surface structure to a second wafer.
5. The inspection method of claim 4, wherein the second wafer has a dimension of 200-240 mm.
6. The inspection method of claim 1, wherein the first wafer has a dimension of 200-240 mm.
7. The detection method according to claim 1, wherein the plasma process is bombarded with nitrogen ions.
8. The detection method according to claim 1, wherein the thermal wave collection device is a thermal wave collection meter.
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| CN201711350729.1A CN108109932B (en) | 2017-12-15 | 2017-12-15 | Method for detecting bonding force of wafer |
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| CN201711350729.1A CN108109932B (en) | 2017-12-15 | 2017-12-15 | Method for detecting bonding force of wafer |
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| Publication Number | Publication Date |
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| CN108109932A CN108109932A (en) | 2018-06-01 |
| CN108109932B true CN108109932B (en) | 2020-08-25 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6180497B1 (en) * | 1998-07-23 | 2001-01-30 | Canon Kabushiki Kaisha | Method for producing semiconductor base members |
| CN100559171C (en) * | 2006-11-09 | 2009-11-11 | 中国科学院半导体研究所 | Detect the infrared penetrating image forming apparatus and the control method of bonding quality |
| CN201364886Y (en) * | 2009-02-19 | 2009-12-16 | 中国电子科技集团公司第四十五研究所 | Binding force monitoring and detecting device |
| CN102466467B (en) * | 2010-11-19 | 2014-03-12 | 中芯国际集成电路制造(北京)有限公司 | Method for monitoring film thickness |
| CN103882401B (en) * | 2014-03-20 | 2016-08-24 | 上海华力微电子有限公司 | A kind of method monitoring cryogenic implantation |
| KR20160031630A (en) * | 2014-09-12 | 2016-03-23 | 현대중공업 주식회사 | Apparatus and method for detecting defect in triplex adhesive layer of lng carrier ship |
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Address after: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Xinxin Integrated Circuit Co.,Ltd. Country or region after: China Address before: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Country or region before: China |