CN108109904A - Nanometer wire dirac semimetal Cadmium arsenide and preparation method thereof - Google Patents
Nanometer wire dirac semimetal Cadmium arsenide and preparation method thereof Download PDFInfo
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- CN108109904A CN108109904A CN201711335666.2A CN201711335666A CN108109904A CN 108109904 A CN108109904 A CN 108109904A CN 201711335666 A CN201711335666 A CN 201711335666A CN 108109904 A CN108109904 A CN 108109904A
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Abstract
A kind of nanometer of wire dirac semimetal Cadmium arsenide and preparation method thereof, which includes：Heating is carried out to source material Cadmium arsenide solid powder makes it be evaporated under defined atmosphere, the source substance evaporated is transported to by the air-flow of particular size on the substrate of distance sources substance certain distance, is nucleated on substrate in certain heating time endogenous substance, is crystallized to grow nanowire shape Cadmium arsenide.The preparation method of the present invention is easy to operate, of low cost, safe and reliable and can control a nanometer pattern for wire Cadmium arsenide to a certain extent.
Description
Technical field
The invention belongs to semiconductor nano material preparing technical fields, and in particular to a kind of nanometer of wire dirac semimetal
Cadmium arsenide and available for largely preparing its preparation method.
Background technology
In recent years, with topological insulator, topological superconductor, the New Topological material that topological dirac semimetal is representative
It is subject to the extensive concern of researcher with its distinctive unusual physical property.Meanwhile these New Topological quantum materials are distinctive
Physical property provides good basis for the research of Condensed Matter Physics.Wherein, topological dirac semimetal Cadmium arsenide is special with it
Different band structure and larger carrier mobility and excellent chemical stability become the ideal of Condensed Matter Physics research
Material.
Dirac semimetal Cadmium arsenide in three-momentum space have linear dispersed band structure, and its conduction band and
Valence band inverts, and conduction band and valence band intersect at a point, and Fermi surface is reduced into a little at this point, this point is referred to as dirac
Point.Dirac point is made of chiral two opposite your outer points, when destroying the symmetry of dirac semimetal Cadmium arsenide,
Dirac point can be split up into two outer that points, so as to obtain external ear semimetal.Therefore, dirac semimetal Cadmium arsenide is to be
A kind of ideal material of the topological semimetal quantum phase transitions of systemization research.Meanwhile because the spin of dirac semimetal Cadmium arsenide is special
Property and larger carrier mobility, can be used for prepare next-generation spintronic devices.
At present, preparing the method for dirac semimetal Cadmium arsenide mainly includes molecular beam epitaxy (Molecular Beam
Epitaxy), the hot method of flux (Flux Method) and chemical vapour deposition technique (Chemical Vapour Deposition
Method).Molecular beam epitaxy is typically to be grown in mica substrate, and high quality can be obtained by molecular beam epitaxy
The controllable Cadmium arsenide's film of thickness, and its crystal quality is preferable, and optics and magnetic performance are excellent, saturable can be used as to inhale
Acceptor is used for Infrared Mode Locked Laser.It is but especially high to vacuum level requirements, it is necessary in ultrahigh vacuum in entire growth course
Under grown, at the same time cadmium element can be attached to the growth chamber inner surface of molecular beam epitaxial device, so as to saboteur
The cleanliness factor and vacuum degree of beam epitaxy equipment growth chamber, and the cadmium element adhered to is difficult to clean off；Meanwhile molecular beam epitaxy is set
It is standby sufficiently expensive and complicated for operation.
The Cadmium arsenide prepared using the hot method of flux equally has excellent electricity and magnetic performance, but its thickness, size
And shape is all difficult to control.When preparing Cadmium arsenide using solvent-thermal method, it is necessary to two kinds of powdery starting materials, be respectively arsenic and
Cadmium, and excessive cadmium is needed, accompanying problem is that, there may be cadmium elements in the Cadmium arsenide's product finally prepared to surpass
Target situation influences the purity of Cadmium arsenide so as to influence its electricity and magnetic performance.Meanwhile prepare Cadmium arsenide using solvent-thermal method
When need to carry out more than high-temperature heating twenty four hours even more long, and need to carry out centrifugal treating at high temperature, have one
Fixed danger.
Therefore, a kind of easy to operate, of low cost, method that product is controllable how is established to prepare Cadmium arsenide, for opening up
The research for flutterring materialogy and Condensed Matter Physics has very great meaning.
The content of the invention
In view of this, it is an object of the invention to provide the preparations of a kind of nanometer of wire dirac semimetal Cadmium arsenide material
Method, to solve at least one of above-mentioned technical problem.
To achieve these goals, as one aspect of the present invention, the present invention provides a kind of nanometer of wire dirac
The preparation method of semimetal Cadmium arsenide, which is characterized in that comprise the following steps：
Heating is carried out to source substance makes it be evaporated under the protective atmosphere of nitrogen or argon gas；
By carrier gas by the above-mentioned source transport of substances evaporated to substrate remote 20~30cm of distance sources substance, 500
~600 DEG C of 20~60min of heating, make the source substance be nucleated over the substrate, crystallize to grow to obtain the nano wire
Shape dirac semimetal Cadmium arsenide.
As another aspect of the present invention, the present invention also provides a kind of basis preparation methods as described above to be prepared into
The nanometer wire dirac semimetal Cadmium arsenide arrived.
It is understood based on above-mentioned technical proposal, nanometer wire dirac semimetal Cadmium arsenide of the invention and preparation method thereof tool
It has the advantages that：(1) preparation method of the invention can to a certain extent have the size of nanometer wire Cadmium arsenide
The regulation and control of effect；Using a process for preparing Cadmium arsenide be nanometer wire, it is most important that the diameter of nanometer wire Cadmium arsenide and
Length equidimension can be regulated and controled by multiple means, wherein maximally efficient control measures be to heating time of source substance with
And the distance between substrate and source substance are regulated and controled；The method of the present invention can obtain diameter and exist in 25~50 rans, length
The nanometer wire Cadmium arsenide of 10~50 microns；(2) high vacuum and high-temperature heating, condition is not required in preparation method of the invention
Easily reach；(3) equipment needed for preparation method of the invention is simple, of low cost beneficial to operation and maintenance, securely and reliably.
Description of the drawings
Fig. 1 is the Scanning Electron microscope figure for the Cadmium arsenide's nano wire being prepared using 1 method of the embodiment of the present invention；
Fig. 2 is the X-ray energy spectrogram for the Cadmium arsenide's nano wire being prepared using 1 method of the embodiment of the present invention.
Specific embodiment
Understand to make the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, to this hair
It is bright to be described in further detail
The invention discloses the preparation method of a kind of nanometer of wire dirac semimetal Cadmium arsenide, by by source material in spy
Certain temperature is heated under fixed gas atmosphere makes its evaporation, the source substance evaporated by the carrier gas of certain flow rate be transported to away from
On the substrate with a certain distance from the substance of source, deposited on substrate in certain heating time endogenous substance and be nucleated, tie
Brilliant and then growth nanowire shape Cadmium arsenide；Wherein, specific gas atmosphere is nitrogen or argon gas；Certain distance is distance sources
20~30cm of substance is remote, and heating temperature is 500~600 DEG C, and heating time is 20~60min, makes the source substance in the lining
It is nucleated on bottom, crystallizes to grow to obtain the nanometer wire dirac semimetal Cadmium arsenide.
Wherein, which is preferably Cadmium arsenide solid powder of the purity more than 99%, and substrate used is preferably crystal orientation
For the p-type silicon substrate of (001).
Wherein, carrier gas is protective gas, and the air-flow size of certain flow rate is 20~100sccm.
Wherein, substance each dosage in source is 0.5~1.0g.
Wherein, keep gas flow rate constant in temperature-fall period, and rate of temperature fall is 5 DEG C per minute.
In a preferred embodiment, which is 0.5g, and the heating temperature to source substance is 500 DEG C,
Flow rate of carrier gas is 50sccm, and the distance between substrate and source substance are 25cm, heating time 60min.
The invention also discloses half gold of nanometer wire dirac that a kind of basis preparation method as described above is prepared
Belong to Cadmium arsenide, the diameter for the nanometer wire dirac semimetal Cadmium arsenide being thus prepared is in 25~50 rans, length
In 10~50 microns.
Below by specific embodiment, explanation is further explained to specific embodiments of the present invention.
Embodiment 1
Cadmium arsenide solid powder of the 0.5g purity more than 99% is placed in the central part for the quartz ampoule that will be heated, it will
Crystal orientation is placed in for the p-type silicon substrate of (001) at distance sources substance 25cm, before being heated to source substance, is using flow velocity
The nitrogen of 300sccm repeatedly carries out degasification to exclude the foreign gases such as the oxygen inside quartz ampoule to quartz ampoule.
After degasification terminates, by gas flow rate control in 50sccm, and within 40min by the temperature at the substance of source by
Room temperature is heated to 500 DEG C, and keeps this temperature 40min, can obtain nanometer tufted Cadmium arsenide of the length in 10 microns
While obtain a small amount of length in 20 microns, diameter in the nanometer wire Cadmium arsenide of 30 rans, Scanning Electron shows
Micro mirror figure and X-ray energy spectrogram are referring to Fig. 1,2.
Embodiment 2
Cadmium arsenide solid powder of the 0.5g purity more than 99% is placed in the central part for the quartz ampoule that will be heated, it will
Crystal orientation is placed in for the p-type silicon substrate of (001) at distance sources substance 25cm, before being heated to source substance, is using flow velocity
The nitrogen of 300sccm repeatedly carries out degasification to exclude the foreign gases such as the oxygen inside quartz ampoule to quartz ampoule.
After degasification terminates, by gas flow rate control in 50sccm, and within 40min by the temperature at the substance of source by
Room temperature is heated to 500 DEG C, and keeps this temperature 60min, and obtained Cadmium arsenide's length is in 30 microns, diameter at 50 nanometers
Left and right, by SEM tests it is observed that the size of nanometer wire Cadmium arsenide is substantially uniform consistent.
Embodiment 3
Cadmium arsenide solid powder of the 0.5g purity more than 99% is placed in the central part for the quartz ampoule that will be heated, it will
Crystal orientation is placed in for the p-type silicon substrate of (001) at distance sources substance 25cm, before being heated to source substance, is using flow velocity
The nitrogen of 300sccm repeatedly carries out degasification to exclude the foreign gases such as the oxygen inside quartz ampoule to quartz ampoule.
After degasification terminates, by gas flow rate control in 50sccm, and within 40min by the temperature at the substance of source by
Room temperature is heated to 550 DEG C, and keeps this temperature 60min, can obtain length in 30 microns, diameter in 25 rans
Nanometer wire Cadmium arsenide, but part nanometer wire Cadmium arsenide is present with stacking phenomenon.
Embodiment 4
Cadmium arsenide solid powder of the 1.0g purity more than 99% is placed in the central part for the quartz ampoule that will be heated, it will
Crystal orientation is placed in for the p-type silicon substrate of (001) at distance sources substance 30cm, before being heated to source substance, is using flow velocity
The nitrogen of 300sccm repeatedly carries out degasification to exclude the foreign gases such as the oxygen inside quartz ampoule to quartz ampoule.
After degasification terminates, by gas flow rate control in 25sccm, and within 40min by the temperature at the substance of source by
Room temperature is heated to 600 DEG C, and keeps this temperature 20min, can obtain nanometer wire Cadmium arsenide of the length in 10 microns.
Comparative example 1
Cadmium arsenide solid powder of the 0.5g purity more than 99% is placed in the central part for the quartz ampoule that will be heated, it will
Crystal orientation is placed in for the p-type silicon substrate of (001) at distance sources substance 15cm, before being heated to source substance, is using flow velocity
The nitrogen of 300sccm repeatedly carries out degasification to exclude the foreign gases such as the oxygen inside quartz ampoule to quartz ampoule.
After degasification terminates, gas flow rate is controlled in 100sccm, and by the temperature at the substance of source within 40min
500 DEG C are heated to by room temperature, and keeps this temperature 40min, nanometer tufted arsenic of the length in 10 microns can be obtained
Cadmium, nanometer tufted Cadmium arsenide is more scattered, and length and uneven.
Comparative example 2
Cadmium arsenide solid powder of the 0.5g purity more than 99% is placed in the central part for the quartz ampoule that will be heated, it will
Crystal orientation is placed in for the p-type silicon substrate of (001) at distance sources substance 5cm, before being heated to source substance, is using flow velocity
The nitrogen of 300sccm repeatedly carries out degasification to exclude the foreign gases such as the oxygen inside quartz ampoule to quartz ampoule.
After degasification terminates, by gas flow rate control in 50sccm, and within 40min by the temperature at the substance of source by
Room temperature is heated to 500 DEG C, and keeps this temperature 60min, at this time, it can be seen that nanometer wire Cadmium arsenide disappears, occurs on a small quantity not
Single-size shape Cadmium arsenide.
Comparative example 3
Cadmium arsenide solid powder of the 0.5g purity more than 99% is placed in the central part for the quartz ampoule that will be heated, it will
Crystal orientation is placed in for the p-type silicon substrate of (001) at distance sources substance 25cm, before being heated to source substance, is using flow velocity
The nitrogen of 300sccm repeatedly carries out degasification to exclude the foreign gases such as the oxygen inside quartz ampoule to quartz ampoule.
After degasification terminates, by gas flow rate control in 50sccm, and within 40min by the temperature at the substance of source by
Room temperature is heated to 500 DEG C, and keeps this temperature 90min, at this time, it can be seen that nanometer wire Cadmium arsenide disappears, occurs what is stacked
It must shape Cadmium arsenide particle.
The main experimental parameter and result of the test of the various embodiments described above and comparative example are listed in table 1, in order to comparative analysis.
Table 1
As shown in Table 1, when meeting the above-mentioned experiment condition of the present invention, nanometer dirac semimetal Cadmium arsenide obtained is
Wire, for diameter in 25~50 rans, length realizes the experiment purpose of the present invention in 10~50 microns.Work as distance
Too near or soaking time is too long, then effect can deteriorate or even can not obtain a nanometer wire dirac semimetal Cadmium arsenide.
Particular embodiments described above has carried out the purpose of the present invention, technical solution and advantageous effect further in detail
Describe in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the protection of the present invention
Within the scope of.
Claims (9)
1. the preparation method of a kind of nanometer of wire dirac semimetal Cadmium arsenide, which is characterized in that comprise the following steps：
Heating is carried out to source substance makes it be evaporated under the protective atmosphere of nitrogen or argon gas；
By carrier gas by the above-mentioned source transport of substances evaporated to substrate remote 20~30cm of distance sources substance, 500~600
DEG C 20~60min of heating, makes the source substance be nucleated over the substrate, crystallize to grow to obtain nanometer wire Di drawing
Gram semimetal Cadmium arsenide.
2. according to the method described in claim 1, it is characterized in that, the source substance is consolidated for Cadmium arsenide of the purity more than 99%
Body powder.
3. according to the method described in claim 1, it is characterized in that, the protective atmosphere is nitrogen or argon gas atmosphere.
4. according to the method described in claim 1, it is characterized in that, the substrate is the p-type silicon substrate that crystal orientation is (001).
5. according to the method described in claim 1, it is characterized in that, the carrier gas is protective gas, air-flow size for 20~
100sccm。
6. according to the method described in claim 1, it is characterized in that, each dosage of the source substance is 0.5~1.0g.
7. according to the method described in claim 1, it is characterized in that, keep gas flow rate constant in temperature-fall period, and cool down
Rate is 5 DEG C per minute.
8. the nanometer wire dirac semimetal arsenic that the preparation method according to claim 1 to 7 any one is prepared
Cadmium.
9. according to claim 8 nanometer of wire dirac semimetal Cadmium arsenide, diameter is in 25~50 rans, length
Degree is in 10~50 microns.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110085660A (en) * | 2019-04-15 | 2019-08-02 | 北京大学 | A kind of topology field effect transistor and its implementation |
| CN111554567A (en) * | 2020-05-18 | 2020-08-18 | 中国科学院半导体研究所 | Nano linear dirac semimetal cadmium arsenide and preparation method thereof |
| KR20210146090A (en) | 2020-05-26 | 2021-12-03 | 고려대학교 세종산학협력단 | Cadmium Arsenide Nanowire and Preparation Method Thereof |
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| CN102714137A (en) * | 2009-10-16 | 2012-10-03 | 康奈尔大学 | Method and apparatus including nanowire structure |
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- 2017-12-13 CN CN201711335666.2A patent/CN108109904A/en active Pending
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| CN102714137A (en) * | 2009-10-16 | 2012-10-03 | 康奈尔大学 | Method and apparatus including nanowire structure |
Non-Patent Citations (2)
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| HAIYANG PAN ET AL: "Quantum oscillation and nontrivial transport in the Dirac semimetal Cd3As2 nanodevice", 《APPLIED PHYSICS LETTERS》 * |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110085660A (en) * | 2019-04-15 | 2019-08-02 | 北京大学 | A kind of topology field effect transistor and its implementation |
| CN111554567A (en) * | 2020-05-18 | 2020-08-18 | 中国科学院半导体研究所 | Nano linear dirac semimetal cadmium arsenide and preparation method thereof |
| KR20210146090A (en) | 2020-05-26 | 2021-12-03 | 고려대학교 세종산학협력단 | Cadmium Arsenide Nanowire and Preparation Method Thereof |
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Application publication date: 20180601 |