CN108108573A - A kind of IGBT power module junction temperature dynamic prediction method - Google Patents
A kind of IGBT power module junction temperature dynamic prediction method Download PDFInfo
- Publication number
- CN108108573A CN108108573A CN201810036617.7A CN201810036617A CN108108573A CN 108108573 A CN108108573 A CN 108108573A CN 201810036617 A CN201810036617 A CN 201810036617A CN 108108573 A CN108108573 A CN 108108573A
- Authority
- CN
- China
- Prior art keywords
- igbt
- fwd
- loss
- power module
- junction temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 230000008878 coupling Effects 0.000 claims abstract description 6
- 238000010168 coupling process Methods 0.000 claims abstract description 6
- 238000005859 coupling reaction Methods 0.000 claims abstract description 6
- 238000011084 recovery Methods 0.000 claims description 12
- 230000009466 transformation Effects 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 230000001052 transient effect Effects 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 5
- 238000005265 energy consumption Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/10—Geometric CAD
- G06F30/18—Network design, e.g. design based on topological or interconnect aspects of utility systems, piping, heating ventilation air conditioning [HVAC] or cabling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Evolutionary Computation (AREA)
- General Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computer Networks & Wireless Communication (AREA)
- Computational Mathematics (AREA)
- Mathematical Analysis (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Inverter Devices (AREA)
Abstract
The present invention provides a kind of IGBT power module junction temperature dynamic prediction methods, solve the problems, such as to use and unreasonable thermal design to avoid IGBT power module junction temperature excessively high and fluctuating the excessive excessive drop volume that failure is caused to carry out at present.Analytic value is input in the junction temperature computation model for considering electro thermal coupling by its dynamic analysis for carrying out including the circuit parameters such as modulation ratio, output current, output voltage, output frequency according to the operating status of motor, realizes the dynamic junction temperature prediction under operating mode.
Description
Technical Field
The invention relates to the field of junction temperature prediction of IGBT modules, in particular to a dynamic junction temperature prediction method of an IGBT power module in a three-phase inverter system under working condition application.
Background
Due to the kHz-level switching frequency characteristic of an IGBT (insulated gate transistor) power module, great heat loss is generated during working, the temperature (junction temperature) at a PN junction of a chip is increased and fluctuated, and the module is failed in severe cases. The existing countermeasure is to derate the IGBT module, or to match the radiator with larger mass and volume to the inversion system where the IGBT module is located to fully ensure the heat radiation. However, in the above measures, the excessive derating may reduce the application range of the power module, and the unreasonable heat dissipation design may also result in increased system weight and wasted occupied space. Therefore, accurate junction temperature prediction is of great significance in determining the safety limit of the IGBT power module, improving the application range and reliability and carrying out reasonable thermal design.
The electric field and the temperature field in the IGBT power module are mutually coupled, meanwhile, the operation conditions of related circuit parameters under different application occasions also change in real time, the influence of electrothermal coupling is usually ignored by the existing IGBT junction temperature prediction model, or the existing IGBT junction temperature prediction model can only be used for junction temperature prediction at a specific working point, and the IGBT power module still has defects in the aspect of working condition application. Therefore, the dynamic junction temperature prediction of the IGBT power module under the working condition application is necessary.
Disclosure of Invention
Aiming at the technical problems in the prior art, the invention provides a junction temperature dynamic prediction method for an IGBT power module, which specifically comprises the following steps:
step 1, obtaining the torque and the rotating speed of a first working point of a motor according to the running state of the motor;
step 2, establishing a motor working point analytical model; and (2) inputting the torque and the rotating speed obtained in the step (1) into the established motor working point analytical model to obtain a dq axis current voltage value, and further obtaining an inverter output three-phase current voltage and a switching signal. Storing grid resistance of a driving end, switching frequency and DC end direct current bus voltage information;
step 3, establishing a loss calculation model of the IGBT power module; setting initial temperatures of an IGBT and an anti-parallel diode FWD in the power module, and inputting the parameters in the step 2 into the established loss calculation model to obtain loss values of the IGBT and the anti-parallel diode FWD;
step 4, establishing a thermal resistance network model of the IGBT power module; inputting the loss value obtained in the step 3 into the thermal resistance network model to obtain junction temperature corresponding to the current motor working point;
and 5, inputting the junction temperature feedback obtained in the step 4 into a loss calculation model of the IGBT power module to realize dynamic junction temperature prediction under the application of working conditions.
Further, the establishing of the motor operating point analytical model in the step 2 specifically includes:
in the case of a surface-mounted motor, the inductances of d and q axes are the same and the same as the phase inductance, so the electromagnetic torque T is the same em Is expressed as follows
Wherein p is the polar logarithm, # f Is a permanent magnet flux linkage i q Is the q-axis current;
alternatively, a motor constant k is adopted t And i q Manner of representing electromagnetic torque:
judging whether the motor is in a non-weak magnetic region or a weak magnetic region: id =0 is adopted in the non-weak magnetic region, and the amplitude of the output phase voltage at this time is represented as:
in the weak magnetic region, the amplitude of the output phase voltage is expressed as follows:
after id and iq are obtained, the outputs of three phases A, B and C under corresponding torque rotating speeds are obtained through constant amplitude value conversion, wherein Park conversion is applied to the change of a dq axial alpha beta rotating coordinate system, and the following conversion relation is achieved:
wherein θ is a phase angle;
the transformation of the alpha beta rotating coordinate system to three phases A, B and C is Clark transformation, and the transformation relationship is as follows:
wherein i A 、i B 、i C Each phase current.
The model can realize the state analysis of circuit parameters of the module such as output voltage, current, frequency, switching signals and the like under different load working conditions.
Further, the establishing of the loss calculation model of the IGBT power module in step 3 specifically includes:
loss P of IGBT power module Module The method comprises the following steps: on-state loss P generated during IGBT operation IGBT_con And turn-on loss P in the transient state of the switch IGBT_on Turn-off loss P IGBT_off (ii) a On-state loss P of FWD in operation FWD_con And reverse recovery loss P FWD_re ：
P Module ＝P IGBT_con +P IGBT_on +P IGBT_off +P FWD_con +P FWD_re
On-state voltage drop V when IGBT and FWD are conducted CE And V D From respective threshold voltages V CEO 、V DO And an on-resistance R ch 、R d The pressure drop is formed by two parts and is related to the actual temperature T, and the relation is expressed as follows, T 0 Is a reference temperature, I C And I D Current through IGBT and FWD, respectively, wherein b T M and b D Are all temperature-related terms that can be fitted by a curve.
V D (T)＝V DO (T 0 )+b D ·(T-T 0 )+R d (T)·I D 2
Calculating to obtain the on-state loss, wherein D T And D D Duty cycle for IGBT and FWD in a unit switching period:
P IGBT_con ＝(V CEO (T)·I C +R ch (T)I C 2 )·D T
P FWD_con ＝(V DO (T)I D +R d (T)I D 2 )·D D
at a switching frequency f sw Time, turn-on power loss P of IGBT IGBT_on Turn off power loss P IGBT_off And reverse recovery power loss P of FWD FWD_re Can be expressed as follows:
P IGBT_on ＝f sw ·E IGBT_on
P IGBT_off ＝f sw ·E IGBT_off
P FWD_re ＝f sw ·E FWD_re ；
wherein,
wherein, E IGBT_on Turn-on energy loss for IGBT, E IGBT_off Turn-off energy loss for IGBT, E FWD_re For the reverse recovery energy loss of FWD, a on 、b on 、c on 、a off 、b off 、c off 、a re 、b re 、c re As fitting constant, k on 、k off 、k re As a temperature-dependent term, E on (R g )、E off (R g )、E off (R g ) And E on (R rated )、E off (R rated )、E off (R rated ) Respectively corresponding on and off energy consumption of IGBT, reverse recovery energy consumption of FWD, V under actual gate resistance and reference gate resistance DC_rated Is a reference dc bus value.
Further, the establishing of the thermal resistance network model of the IGBT power module in step 4 specifically includes: the model is based on the following assumptions:
(1) Neglecting the effects of thermal radiation and thermal convection, the form of heat transfer within the module is thermal conduction:
(2) Due to the filling of the heat insulating silica gel, the heat transfer path is from the chip to the substrate:
(3) The influence of the thermal coupling between the chips is ignored:
(4) Neglecting the local temperature difference of a single chip, and adopting a centralized parameter method;
and establishing a fourth-order Foster thermal resistance network model based on the assumptions.
Further, the junction temperature corresponding to the current motor operating point is calculated by the following method:
let the bottom surface temperature of the copper substrate be constant T C The thermal resistance of IGBT and FWD from respective chips to bottom case is R jc_IGBT And R jc_FWD Junction temperature T of IGBT and anti-parallel diode FWD j_IGBT 、T j_FWD Can be expressed as follows:
T j_IGBT ＝T c +R jc_IGBT ·P IGBT
T j_FWD ＝T c +R jc_FWD ·P FWD
wherein, P IGBT Including P IGBT_con 、P IGBT_on And P IGBT_off ，P FWD Including P FWD_con And P FWD_rr 。
The method provided by the invention solves the problems of excessive derating use and unreasonable thermal design for avoiding failure caused by overhigh junction temperature and overlarge fluctuation of the IGBT power module at present. According to the running state of the motor, dynamic analysis of circuit parameters including modulation ratio, output current, output voltage, output frequency and the like is carried out, and the analysis value is input into a junction temperature calculation model considering electrothermal coupling, so that dynamic junction temperature prediction under the working condition is realized. There are numerous non-obvious benefits over the prior art.
Drawings
FIG. 1 is a schematic flow chart of a method provided by the present invention
FIG. 2 is a schematic diagram of a half-bridge structure of an IGBT power module
FIG. 3 is a schematic diagram of the switching transient of an IGBT
FIG. 4 is an equivalent schematic diagram of an internal package of an IGBT power module
FIG. 5 is a schematic diagram of the SPWM bipolar modulation principle (regular sampling method)
FIG. 6 is a Foster equivalent thermal resistance network model
FIG. 7 shows the judgment logic of weak magnetic area and non-weak magnetic area of the motor
FIG. 8 is a schematic diagram of switching signals under SWPM modulation
Detailed Description
The technical scheme of the invention is further explained in detail by combining the attached drawings.
As shown in fig. 1, the present invention provides a method for dynamically predicting junction temperature of an IGBT power module, which specifically includes the following steps:
step 1, obtaining the torque and the rotating speed of the motor at a first working point according to the running state of the motor;
step 2, establishing a motor working point analytical model; and (3) inputting the torque and the rotating speed obtained in the step (1) into the established motor working point analytical model to obtain a dq axis current voltage value, and further obtaining the three-phase current voltage and the switching signal output by the inverter. Storing grid resistance of a driving end, switching frequency and DC end direct current bus voltage information;
step 3, establishing a loss calculation model of the IGBT power module; setting initial temperatures of an IGBT and an anti-parallel diode FWD in the power module, and inputting the parameters in the step 2 into the established loss calculation model to obtain loss values of the IGBT and the anti-parallel diode FWD;
step 4, establishing a thermal resistance network model of the IGBT power module; inputting the loss value obtained in the step 3 into the thermal resistance network model to obtain junction temperature corresponding to the current motor working point;
and 5, feeding the junction temperature obtained in the step 4 back to a loss calculation model of the IGBT power module, and realizing dynamic junction temperature prediction under working condition application.
In a preferred embodiment of the present application, the establishing an analytic model of the operating point of the motor in step 2 specifically includes:
in the case of a surface-mounted motor, the inductances of d and q axes are the same and the same as the phase inductance, so the electromagnetic torque T is the same em Is expressed as follows
Wherein p is the logarithm of the pole, # f Is a permanent magnet flux linkage i q Is the q-axis current;
alternatively, a motor constant k is adopted t And i q Manner of representing electromagnetic torque:
judging whether the motor is in a non-weak magnetic region or a weak magnetic region, as shown in fig. 7: the control requirement can be met by generally adopting id =0 in the non-weak magnetic area. But when the voltage reaches the limit u lim If the machine is intended to operate at a higher rotational speed, the field current needs to be reduced, as well asEven if id becomes negative, the amplitude of the maximum phase voltage which can be output by the inverter under SPWM modulation is 0.5U DC 。
Therefore, if the motor is in the non-weak magnetic region, id =0, and the amplitude of the output phase voltage at this time can be represented as:
and if the weak magnetic region has been entered, the amplitude of the output phase voltage is expressed as follows:
therefore, when performing field weakening, it is necessary to perform discrimination according to a certain logic. At any given rotational speed and torque, the id can be calculated when the weak magnetic area is entered. Subsequently, in conjunction with the weak magnetic discrimination, if the magnetic field is not weak magnetic, it means that id =0, and the calculated value is reset to 0, and if the magnetic field is weak magnetic, the calculation result is kept unchanged according to the previous experiment.
After id and iq are obtained, the outputs of three phases A, B and C under corresponding torque and rotating speed can be obtained through constant amplitude conversion. The change of the dq axial alpha beta rotation coordinate system is Park transformation, and the conversion formula is as follows:
transformation of α β into three phases a, B, C is Clark transformation, and the transformation formula is as follows.
Taking phase A as an example, the phase voltage U is set A Triangular carrier U triangle Signal output 1 represents the upper bridge armSwitching on the lower bridge arm; and 0 represents that the lower bridge arm is switched on and the upper bridge arm is switched off. Taking phase a as an example, the output rule of the switching signal is as follows: u shape A >U triangle When the switching signal is output 1, the upper bridge arm is conducted and is combined with the phase voltage i A Judging whether the IGBT or the same bridge arm FWD works; when U is formed A <U triangle When the switching signal is output to be 0, the lower bridge arm is conducted, and the corresponding IGBT and FWD work judgment is also carried out through i A The positive and negative judgment of (2) is opposite to the upper bridge arm condition. The switching signal output under the judgment is schematically shown as the following:
the model can realize the state analysis of circuit parameters of the module such as output voltage, current, frequency, switching signals and the like under different load working conditions.
In a preferred embodiment of the present application, the establishing a loss calculation model of the IGBT power module in step 3 specifically includes:
the IGBT power module usually includes an IGBT and an anti-parallel diode FWD, and thus a power module having a typical half-bridge structure as shown in fig. 2 is formed, including upper and lower arms. Loss P of IGBT power module Module The method comprises the following steps: the transient process of the IGBT is shown in FIG. 3, and the on-state loss P is generated during the operation IGBT_con And turn-on loss P in the transient state of the switch IGBT_on Turn-off loss P IGBT_off (ii) a On-state loss P of FWD in operation FWD_con And reverse recovery loss P FWD_rr ：
P Module ＝P IGBT_con +P IGBT_on +P IGBT_off +P FWD_con +P FWD_re
On-state voltage drop V when IGBT and FWD are conducted CE And V D From respective threshold voltages V CEO 、V DO And an on-resistance R ch 、R d The pressure drop produced is composed of two parts and is related to the temperature T, which is expressed as follows, T0 is the reference temperature, I C And I D Current through IGBT and FWD, respectively, wherein b T M and b D Are all temperature-related terms that can be fitted by a curve.
V D (T)＝V DO (T 0 )+b D ·(T-T 0 )+R d (T)·I D 2
Calculating to obtain the on-state loss, wherein D T And D D For the duty cycle of IGBT and FWD within a unit switching period:
P IGBT_con ＝(V CEO (T)·I C +R ch (T)I C 2 )·D T
P FWD_con ＝(V DO (T)I D +R d (T)I D 2 )·D D
the turn-on process of the IGBT includes a turn-on delay t d(on) Current rise t ri Voltage drop t fv Three stages, the turn-on energy E generated by the IGBT when turning on once IGBT_on Is represented as follows:
wherein, V DC Is a DC bus voltage, I RM Reverse recovery of peak current for diodes
The turn-off process of the IGBT is changed from an on state to a forward blocking state. The process includes a voltage rise t rv Current drop t fi And a tail t tail Three stages. Turn-off energy E generated by IGBT every time it is turned off IGBT_off Is shown as follows, I tail Is the tail current.
Where Δ V is the additional voltage spike.
Due to the difficulty of time of each stage in the switching processThe IGBT switching energy loss and the direct current bus voltage V can be obtained by determining and carrying out linear approximate processing on the voltage and current change rate DC In a linear relationship with the collector current I C Considering the influence of gate resistance and temperature, the above equation can be transformed into:
similarly, the reverse recovery loss of a diode can be expressed as follows
In SPWM bipolar modulation as shown in FIGS. 5 and 8, the IGBT operates in the positive half-cycle of the current and the FWD operates in the negative half-cycle of the current. The pulse width delta of the IGBT and FWD device of the upper bridge arm in the k modulation wave period can be obtained through geometric similarity relation, wherein T is shown as follows 0 For modulating the wave period, T C Is a switching cycle.
Therefore, the conduction loss P of the IGBT and the FWD of the upper bridge arm under SPWM modulation can be obtained IGBT_con And P FWD_con The on-state power loss in the k-th modulation wave period is
At a switching frequency f sw Time, turn-on power loss P of IGBT IGBT_on Turn off power lossConsumption P IGBT_off And reverse recovery power loss P of FWD FWD_re Can be expressed as follows:
P IGBT_on ＝f sw ·E IGBT_on
P IGBT_off ＝f sw ·E IGBT_off
P FWD_re ＝f sw ·E FWD_re 。
in a preferred embodiment of the present application, the establishing a thermal resistance network model of the IGBT power module in step 4 specifically includes: as shown in fig. 4, the model is based on the following assumptions:
(1) Neglecting the effects of thermal radiation and thermal convection, the form of heat transfer within the module is thermal conduction:
(2) Due to the filling of the insulating silica gel, the heat transfer path is from the chip to the substrate:
(3) The influence of the thermal coupling between the chips is ignored:
(4) The local temperature difference of a single chip is ignored, and a centralized parameter method is adopted.
Each layer of the IGBT module can be considered as a thin flat wall with isotropic material. And the Bi number is very small, so that the unsteady state analysis can be carried out by using a centralized parameter method. The one-dimensional unsteady thermal conduction equation can be expressed as follows:
where ρ is the material density, C P Is its heat capacity value. Differential equations and electricity to describe the physical process of one-dimensional heat conduction
The system of equations for conduction has the same form. Thus, problems related to heat can be converted into electricity through electric-thermal analogy
The problem of (2) is to analogize the thermal resistance to the resistance, the thermal capacitance to the capacitance, and the power to the current. And the system over time
The varying thermal impedance value can be expressed as a simple analytical expression, where τ is the thermal time constant,
it can be seen from the formula that the value of the thermal resistance R, the thermal capacity C and the like determine the response of the system to the step function of the power loss.
τ i ＝R i ·C i
The parameters matched with the model can be obtained by fitting the transient thermal impedance curve, and the specific meter is used for calculating
The calculation formula is shown below, where n is the order of the fit. This resulted in a fourth order Foster thermal resistance network model, as shown in FIG. 6.
In a preferred embodiment of the present application, the junction temperature corresponding to the current motor operating point is calculated by:
for a single IGBT power module, the bottom surface temperature of the copper substrate is set to be constant T C The thermal resistance of IGBT and FWD from respective chips to bottom case is R jc_IGBT And R jc_FWD Junction temperature T of IGBT and anti-parallel diode FWD j_IGBT 、T j_FWD Can be expressed as follows:
T j_IGBT ＝T c +R jc_IGBT ·P IGBT
T j_FWD ＝T c +R jc_FWD ·P FWD
wherein, P IGBT Including P IGBT_con 、P IGBT_on And P IGBT_off ，P FWD Including P FWD_con And P FWD_re 。
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A junction temperature dynamic prediction method for an IGBT power module is characterized by comprising the following steps: the method specifically comprises the following steps:
step 1, obtaining the torque and the rotating speed of the motor at a first working point according to the running state of the motor;
step 2, establishing a motor working point analytical model; and (2) inputting the torque and the rotating speed obtained in the step (1) into the established motor working point analytical model to obtain a dq axis current voltage value, and further obtaining an inverter output three-phase current voltage and a switching signal. Storing grid resistance of a driving end, switching frequency and DC end direct current bus voltage information;
step 3, establishing a loss calculation model of the IGBT power module; setting initial temperatures of an IGBT and an anti-parallel diode FWD in the power module, and inputting the parameters in the step 2 into the established loss calculation model to obtain loss values of the IGBT and the anti-parallel diode FWD;
step 4, establishing a thermal resistance network model of the IGBT power module; inputting the loss value obtained in the step 3 into the thermal resistance network model to obtain junction temperature corresponding to the current motor working point;
and 5, inputting the junction temperature feedback obtained in the step 4 into a loss calculation model of the IGBT power module to realize dynamic junction temperature prediction under the application of working conditions.
2. The method of claim 1, wherein: the establishing of the motor working point analytical model in the step 2 specifically includes:
for surface-mounted machines, the d-axis inductance L d And q-axis inductance L q Same and equal to the phase inductance, so its electromagnetic torque T em The expression is as follows:
wherein p is the polar logarithm, # f Is a permanent magnet flux linkage i q Is the q-axis current;
alternatively, the motor constant K is adopted t And i q Manner of representing electromagnetic torque:
judging whether the motor is in a non-weak magnetic region or a weak magnetic region: in non-weakly magnetic regions by using i d =0, and the amplitude of the output phase voltage at this time is represented as follows, where ω is an electrical angular velocity;
in the weak magnetic region, the amplitude of the output phase voltage is expressed as follows, u lim Is a voltage limit, V DC For dc bus voltage:
after id and iq are obtained, the outputs of three phases A, B and C under corresponding torque and rotating speed are obtained through constant amplitude transformation, wherein Park transformation is applied to the change of a dq axial alpha beta rotating coordinate system, and the conversion relation is as follows:
wherein θ is a phase angle;
the transformation of the alpha beta rotating coordinate system to three phases A, B and C is Clark transformation, and the transformation relationship is as follows:
wherein i A 、i B 、i C Each phase current.
3. The method of claim 2, wherein: the establishing of the loss calculation model of the IGBT power module in the step 3 specifically includes:
loss P of IGBT power module Module The method comprises the following steps: on-state loss P generated during IGBT operation IGBT_con And turn-on loss P in the transient state of the switch IGBT_on Turn-off loss P IGBT_off (ii) a On-state loss P of FWD in operation FWD_con And reverse recovery loss P FWD_re ：
P Module ＝P IGBT_con +P IGBT_on +P IGBT_off +P FWD_con +P FWD_re
On-state voltage drop V when IGBT and FWD are conducted CE And V D From respective threshold voltages V CEO 、V DO And an on-resistance R ch 、R d The pressure drop that is generated is composed of two parts and is related to the actual temperature T of the temperature, which is expressed as follows: t is 0 Is a reference temperature, I C And I D Current through IGBT and FWD, respectively, wherein b T M and b D All are temperature-related terms which can be fitted by a curve;
V D (T)＝V DO (T 0 )+b D ·(T-T 0 )+R d (T)·I D 2
calculating to obtain the on-state loss, wherein D T And D D For the duty cycle of IGBT and FWD within a unit switching period:
P IGBT_con ＝(V CEO (T)·I C +R ch (T)I C 2 )·D T
P FWD_con ＝(V DO (T)I D +R d (T)I D 2 )·D D
at a switching frequency f sw Time, turn-on power loss P of IGBT IGBT_on Turn off power loss P IGBT_off And of FWDReverse recovery power loss P FWD_re Can be expressed as follows:
P IGBT_on ＝f sw ·E IGBT_on
P IGBT_off ＝f sw ·E IGBT_off
P FWD_re ＝f sw ·E FWD_re ；
wherein,
wherein, E IGBT_on Turn-on energy loss for IGBT, E IGBT_off For turn-off energy loss, E, of the IGBT FWD_re For the reverse recovery energy loss of FWD, a on 、b on 、c on 、a off 、b off 、c off 、a re 、b re 、c re As fitting constant, k on 、k off 、k re As a temperature-dependent term, E on (R g )、E off (R g )、E off (R g ) And E on (R rated )、E off (R rated )、E off (R rated ) Respectively corresponding on and off energy consumption of IGBT, reverse recovery energy consumption of FWD, V under actual gate resistance and reference gate resistance DC_rated Is a reference dc bus value.
4. The method of claim 3, wherein: further, the establishing of the thermal resistance network model of the IGBT power module in step 4 specifically includes: the model is based on the following assumptions:
(1) Neglecting the effects of thermal radiation and thermal convection, the form of heat transfer within the module is thermal conduction:
(2) Due to the filling of the heat insulating silica gel, the heat transfer path is from the chip to the substrate:
(3) The influence of the thermal coupling between the chips is ignored:
(4) Neglecting the local temperature difference of a single chip, and adopting a centralized parameter method;
and establishing a fourth-order Foster thermal resistance network model based on the assumptions.
5. The method of claim 4, wherein: the junction temperature corresponding to the current motor working point is calculated by the following method: let the bottom surface temperature of the copper substrate be constant T C The thermal resistance of IGBT and FWD from respective chips to bottom case is R jc_IGBT And R jc_FWD Junction temperature T of IGBT and anti-parallel diode FWD j_IGBT 、T j_FWD Can be expressed as follows:
T j_IGBT ＝T c +R jc_IGBT ·P IGBT
T j_FWD ＝T c +R jc_FWD ·P FWD
wherein, P IGBT Including P IGBT_con 、P IGBT_on And P IGBT_off ，P FWD Including P FWD_con And P FWD_rr 。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810036617.7A CN108108573B (en) | 2018-01-15 | 2018-01-15 | IGBT power module junction temperature dynamic prediction method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810036617.7A CN108108573B (en) | 2018-01-15 | 2018-01-15 | IGBT power module junction temperature dynamic prediction method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108108573A true CN108108573A (en) | 2018-06-01 |
| CN108108573B CN108108573B (en) | 2022-05-10 |
Family
ID=62218808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810036617.7A Active CN108108573B (en) | 2018-01-15 | 2018-01-15 | IGBT power module junction temperature dynamic prediction method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108108573B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110504844A (en) * | 2019-09-17 | 2019-11-26 | 国电南瑞科技股份有限公司 | A kind of temperature optimization method of large capacity bank electricity system |
| CN111090940A (en) * | 2019-12-17 | 2020-05-01 | 南方电网科学研究院有限责任公司 | MMC submodule crimping type IGBT short-term failure analysis method based on ANSYS |
| CN112329244A (en) * | 2020-11-09 | 2021-02-05 | 西南交通大学 | Optimal power loss equivalent modeling method for IGBT junction temperature estimation |
| CN112986707A (en) * | 2019-12-02 | 2021-06-18 | 北京新能源汽车股份有限公司 | Service life assessment method and device of power module and automobile |
| CN113030683A (en) * | 2021-03-15 | 2021-06-25 | 五羊—本田摩托（广州）有限公司 | Method, medium and computer equipment for measuring temperature of power switch device |
| CN113343449A (en) * | 2021-05-26 | 2021-09-03 | 上海电力大学 | Method, system and medium for identifying solder cavities of IGBT module of wind power converter |
| US11543305B2 (en) | 2019-01-24 | 2023-01-03 | Wuhan University | Method for estimating junction temperature online on IGBT power module |
| WO2023128737A1 (en) * | 2022-01-03 | 2023-07-06 | 엘지이노텍 주식회사 | Power conversion device |
| CN116467985A (en) * | 2023-06-19 | 2023-07-21 | 湖南大学 | IGBT dynamic avalanche current wire prediction method and system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106443400A (en) * | 2016-09-14 | 2017-02-22 | 河北工业大学 | Electric-heat-aging junction temperature calculation model establishing method of IGBT module |
| CN107025364A (en) * | 2017-05-12 | 2017-08-08 | 西安交通大学 | A kind of junction temperature Forecasting Methodology of IGBT module |
-
2018
- 2018-01-15 CN CN201810036617.7A patent/CN108108573B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106443400A (en) * | 2016-09-14 | 2017-02-22 | 河北工业大学 | Electric-heat-aging junction temperature calculation model establishing method of IGBT module |
| CN107025364A (en) * | 2017-05-12 | 2017-08-08 | 西安交通大学 | A kind of junction temperature Forecasting Methodology of IGBT module |
Non-Patent Citations (2)
| Title |
|---|
| KAIXIN WEI,ETC: "The IGBT Losses Analysis and Calculation of Inverter for Two-seat Electric Aircraft Application", 《THE 8TH INTERNATIONAL CONFERENCE ON APPLIED ENERGY-ICAE2016》 * |
| XIN XIN,ETC: "Electro-thermal based junction temperature estimation model and thermal performance analysis for IGBT module", 《2017 20TH INTERNATIONAL CONFERENCE ON ELECTRICAL MACHINES AND SYSTEMS,ICEMS 2017》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11543305B2 (en) | 2019-01-24 | 2023-01-03 | Wuhan University | Method for estimating junction temperature online on IGBT power module |
| CN110504844A (en) * | 2019-09-17 | 2019-11-26 | 国电南瑞科技股份有限公司 | A kind of temperature optimization method of large capacity bank electricity system |
| CN112986707A (en) * | 2019-12-02 | 2021-06-18 | 北京新能源汽车股份有限公司 | Service life assessment method and device of power module and automobile |
| CN111090940A (en) * | 2019-12-17 | 2020-05-01 | 南方电网科学研究院有限责任公司 | MMC submodule crimping type IGBT short-term failure analysis method based on ANSYS |
| CN111090940B (en) * | 2019-12-17 | 2023-04-14 | 南方电网科学研究院有限责任公司 | MMC sub-module crimping type IGBT short-term failure analysis method based on ANSYS |
| CN112329244A (en) * | 2020-11-09 | 2021-02-05 | 西南交通大学 | Optimal power loss equivalent modeling method for IGBT junction temperature estimation |
| CN112329244B (en) * | 2020-11-09 | 2022-06-14 | 西南交通大学 | Optimal power loss equivalent modeling method for IGBT junction temperature estimation |
| CN113030683A (en) * | 2021-03-15 | 2021-06-25 | 五羊—本田摩托（广州）有限公司 | Method, medium and computer equipment for measuring temperature of power switch device |
| CN113343449A (en) * | 2021-05-26 | 2021-09-03 | 上海电力大学 | Method, system and medium for identifying solder cavities of IGBT module of wind power converter |
| WO2023128737A1 (en) * | 2022-01-03 | 2023-07-06 | 엘지이노텍 주식회사 | Power conversion device |
| CN116467985A (en) * | 2023-06-19 | 2023-07-21 | 湖南大学 | IGBT dynamic avalanche current wire prediction method and system |
| CN116467985B (en) * | 2023-06-19 | 2023-08-29 | 湖南大学 | IGBT dynamic avalanche current wire prediction method and system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108108573B (en) | 2022-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108108573B (en) | IGBT power module junction temperature dynamic prediction method | |
| US9698722B2 (en) | Method and inverter with thermal management for controlling an electric machine | |
| CN105846757B (en) | Power electronic module igbt protection method and system | |
| JP2016092944A (en) | Motor controller | |
| CN105048776B (en) | Gate driving circuit | |
| KR101297453B1 (en) | Motor control device and air conditioner | |
| CN101142737A (en) | Superheating detection mode of electric motor control device | |
| CN1049253A (en) | Voltage-type pulse-width modulation interchange/inverter system and control procedure thereof | |
| Wang et al. | The loss analysis and efficiency optimization of power inverter based on SiC mosfet s under the high-switching frequency | |
| WO2013031828A1 (en) | Power conversion device | |
| CN109591615B (en) | Active heat control method of electric automobile controller and application system thereof | |
| CN109831931A (en) | DC-to-AC converter and the Vehicular electric compressor for having the DC-to-AC converter | |
| CN102447434B (en) | Motor control system | |
| JP2017200248A (en) | Inverter | |
| JP6277114B2 (en) | Power converter | |
| JP2015220840A (en) | Power conversion device and control method therefor | |
| JP2015033149A (en) | Drive unit of semiconductor element and power conversion device using the same | |
| Ye et al. | A drive cycle based electro-thermal analysis of traction inverters | |
| US20230396198A1 (en) | Electrical power conversion apparatus | |
| JP2015033222A (en) | Drive unit of semiconductor device and power conversion device using the same | |
| CN109669112A (en) | Junction temperature monitoring method and device for current transformer and IGBT (insulated Gate Bipolar transistor) module of fan | |
| US11381189B2 (en) | Methods and systems for improving current capability for electric motors | |
| JP2020141457A (en) | Power conversion device and temperature detection method for power conversion device | |
| JP2011135713A (en) | Motor drive control apparatus | |
| Ilyin et al. | Analysis of the Influence of the Switching Strategy on the IGBTs Temperature in AC Drives |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |